Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (150180) > Сторінка 2503 з 2503
Фото | Назва | Виробник | Інформація |
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S26KS512SDABHI030 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24 Mounting: SMD Operating temperature: -40...85°C Case: FBGA24 Operating voltage: 1.7...1.95V Type of integrated circuit: FLASH memory Interface: HyperBus Kind of memory: NOR Flash Kind of package: in-tray Operating frequency: 100MHz Kind of interface: serial Memory: 512Mb FLASH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S26KS512SDABHV030 | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24 Mounting: SMD Operating temperature: -40...105°C Case: FBGA24 Operating voltage: 1.7...1.95V Type of integrated circuit: FLASH memory Interface: HyperBus Kind of memory: NOR Flash Kind of package: in-tray Operating frequency: 100MHz Kind of interface: serial Memory: 512Mb FLASH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TC367DP64F300SAAKXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: TC367DP64F300SAAKXUMA1 |
на замовлення 7000 шт: термін постачання 21-30 дні (днів) |
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BFP410H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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ITS4100SSJNXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
на замовлення 7500 шт: термін постачання 21-30 дні (днів) |
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IMZ120R030M1HXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 57mΩ Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhancement Gate-source voltage: -7...23V Pulsed drain current: 150A |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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IRF7452TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.5A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB107N20NAATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3 Mounting: SMD Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 200V Drain current: 88A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement |
на замовлення 820 шт: термін постачання 21-30 дні (днів) |
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BSS225H6327FTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89 Mounting: SMD Drain-source voltage: 600V Drain current: 0.09A On-state resistance: 45Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Case: SOT89 |
на замовлення 522 шт: термін постачання 21-30 дні (днів) |
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BSS119NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Power dissipation: 0.5W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.19A On-state resistance: 10Ω Type of transistor: N-MOSFET |
на замовлення 4629 шт: термін постачання 21-30 дні (днів) |
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IPN80R4K5P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD Drain current: 1A On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 6W Polarisation: unipolar Kind of package: reel Version: ESD Gate charge: 4nC Technology: CoolMOS™ P7 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Drain-source voltage: 800V |
на замовлення 2096 шт: термін постачання 21-30 дні (днів) |
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IPN80R3K3P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD Drain current: 1.3A On-state resistance: 3.3Ω Type of transistor: N-MOSFET Power dissipation: 6.1W Polarisation: unipolar Kind of package: reel Version: ESD Gate charge: 6nC Technology: CoolMOS™ P7 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Drain-source voltage: 800V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPN80R2K4P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD Drain current: 1.7A On-state resistance: 2.4Ω Type of transistor: N-MOSFET Power dissipation: 6.3W Polarisation: unipolar Kind of package: reel Version: ESD Gate charge: 8nC Technology: CoolMOS™ P7 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Drain-source voltage: 800V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPN80R600P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD Drain current: 5.5A On-state resistance: 0.6Ω Type of transistor: N-MOSFET Power dissipation: 7.4W Polarisation: unipolar Kind of package: reel Version: ESD Gate charge: 20nC Technology: CoolMOS™ P7 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Drain-source voltage: 800V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPN80R750P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD Drain current: 4.6A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 7.2W Polarisation: unipolar Kind of package: reel Version: ESD Gate charge: 17nC Technology: CoolMOS™ P7 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Drain-source voltage: 800V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPI020N06NAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 214W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IPG20N06S4L11ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: IPG20N06S4L11ATMA2 |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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PVU414SPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 1550 шт: термін постачання 21-30 дні (днів) |
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IRGB6B60KDPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 90W Case: TO220AB Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
ISC019N03L5SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 69W Mounting: SMD Drain-source voltage: 30V Drain current: 100A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Case: PG-TDSON-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLE42744DV50ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.4A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 5.5...40V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IPU60R1K5CEAKMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
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S80KS2564GACHI040 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S80KS2564GACHI043 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.7...2V DC Interface: HyperBus |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRF8910TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TD250N16KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 1.6kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw Max. load current: 410A Max. forward voltage: 1.5V Load current: 250A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 8kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 1.6kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TD215N22KOFHPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw Max. load current: 410A Max. forward voltage: 1.8V Load current: 215A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 7kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 2.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TD210N12KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V Max. load current: 410A Max. forward voltage: 1.65V Load current: 210A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 6.6kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TD250N18KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 1.8kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw Max. load current: 410A Max. forward voltage: 1.5V Load current: 250A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 8kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 1.8kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100T038X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 12 Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...105°C Case: PG-TSSOP-38 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100Q024F0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100 Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 8 Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...85°C Case: PG-VQFN-24 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 22 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100T038F0016ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 12 Memory: 16kB FLASH; 16kB SRAM Operating temperature: -40...85°C Case: PG-TSSOP-38 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100T038F0032ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 12 Memory: 16kB SRAM; 32kB FLASH Operating temperature: -40...85°C Case: PG-TSSOP-38 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100Q024F0016ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100 Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 8 Memory: 16kB FLASH; 16kB SRAM Operating temperature: -40...85°C Case: PG-VQFN-24 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 22 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100T016F0008ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1100 Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 6 Memory: 8kB FLASH; 16kB SRAM Operating temperature: -40...85°C Case: PG-TSSOP-16 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 14 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100Q024F0008ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-24; 8kBFLASH,16kBSRAM; XMC1100 Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 8 Memory: 8kB FLASH; 16kB SRAM Operating temperature: -40...85°C Case: PG-VQFN-24 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 22 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100Q040F0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1100 Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 12 Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...85°C Case: PG-VQFN-40 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100T016F0016ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 6 Memory: 16kB FLASH; 16kB SRAM Operating temperature: -40...85°C Case: PG-TSSOP-16 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 14 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100T016F0032ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 6 Memory: 16kB SRAM; 32kB FLASH Operating temperature: -40...85°C Case: PG-TSSOP-16 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 14 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100T016F0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 6 Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...85°C Case: PG-TSSOP-16 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 14 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100T016X0032ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 6 Memory: 16kB SRAM; 32kB FLASH Operating temperature: -40...105°C Case: PG-TSSOP-16 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 14 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100T016X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 6 Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...105°C Case: PG-TSSOP-16 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 14 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF2907ZSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS3110N | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4 Case: PG-SOT223-4 On-state resistance: 0.2Ω Mounting: SMD Turn-on time: 45µs Turn-off time: 60µs Output voltage: 42V Output current: 1.4A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: HITFET®; SIPMOS™ Kind of integrated circuit: low-side Operating temperature: -40...150°C |
на замовлення 2174 шт: термін постачання 21-30 дні (днів) |
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IRS2103STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Supply voltage: 10...20V DC Operating temperature: -40...125°C Number of channels: 2 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Mounting: SMD Case: SO8 Power: 625mW Turn-on time: 750ns Turn-off time: 185ns Output current: -600...290mA Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BSD223PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.39A Power dissipation: 0.25W Case: PG-SOT-363 Gate-source voltage: ±12V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 1819 шт: термін постачання 21-30 дні (днів) |
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BSL307SPH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.5A Power dissipation: 2W Case: PG-TSOP-6 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 2480 шт: термін постачання 21-30 дні (днів) |
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IRFL4105TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 3.7A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of channel: enhancement Kind of package: reel |
на замовлення 847 шт: термін постачання 21-30 дні (днів) |
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BSD214SNH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363 Case: SOT363 Drain-source voltage: 20V Drain current: 1.5A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PVDZ172NSPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 1150 шт: термін постачання 21-30 дні (днів) |
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PVA2352NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 4812 шт: термін постачання 21-30 дні (днів) |
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IPA70R360P7SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 26.5W Case: TO220FP Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Kind of channel: enhancement Version: ESD Kind of package: tube Pulsed drain current: 34A |
на замовлення 105 шт: термін постачання 21-30 дні (днів) |
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IPAN70R360P7SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 26.5W Case: TO220FP Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Gate charge: 16.4nC Kind of channel: enhancement Version: ESD Kind of package: tube |
на замовлення 349 шт: термін постачання 21-30 дні (днів) |
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IPN70R360P7SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 7.2W Case: PG-SOT223 Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 16.4nC Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPS70R360P7SAKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 59.5W Case: IPAK SL Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Gate charge: 16.4nC Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPA050N10NM5SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 3 Pulsed drain current: 264A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSZ150N10LS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 63W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IAUT150N10S5N035ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Power dissipation: 166W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IPB50N10S3L16ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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IPP050N10NF2SAKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 968 шт: термін постачання 21-30 дні (днів) |
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S26KS512SDABHI030 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 1.7...1.95V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 1.7...1.95V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
товару немає в наявності
В кошику
од. на суму грн.
S26KS512SDABHV030 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 1.7...1.95V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 1.7...1.95V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
товару немає в наявності
В кошику
од. на суму грн.
TC367DP64F300SAAKXUMA1 |
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на замовлення 7000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 1982.58 грн |
BFP410H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.94 грн |
ITS4100SSJNXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 65.11 грн |
IMZ120R030M1HXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 57mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -7...23V
Pulsed drain current: 150A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 57mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -7...23V
Pulsed drain current: 150A
на замовлення 28 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1728.81 грн |
2+ | 1517.73 грн |
10+ | 1509.98 грн |
IRF7452TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IPB107N20NAATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Mounting: SMD
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Mounting: SMD
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
на замовлення 820 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 522.57 грн |
3+ | 431.76 грн |
6+ | 407.73 грн |
250+ | 404.62 грн |
BSS225H6327FTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT89
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT89
на замовлення 522 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 51.25 грн |
12+ | 33.49 грн |
49+ | 18.68 грн |
134+ | 17.67 грн |
500+ | 17.13 грн |
BSS119NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.19A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.19A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
на замовлення 4629 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.37 грн |
32+ | 12.40 грн |
50+ | 8.45 грн |
100+ | 7.29 грн |
171+ | 5.35 грн |
468+ | 5.04 грн |
1000+ | 4.88 грн |
IPN80R4K5P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Drain current: 1A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 4nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Drain current: 1A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 4nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
на замовлення 2096 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.09 грн |
10+ | 40.62 грн |
12+ | 34.34 грн |
29+ | 31.70 грн |
50+ | 29.61 грн |
100+ | 28.76 грн |
IPN80R3K3P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Drain current: 1.3A
On-state resistance: 3.3Ω
Type of transistor: N-MOSFET
Power dissipation: 6.1W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 6nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Drain current: 1.3A
On-state resistance: 3.3Ω
Type of transistor: N-MOSFET
Power dissipation: 6.1W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 6nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
товару немає в наявності
В кошику
од. на суму грн.
IPN80R2K4P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Drain current: 1.7A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Power dissipation: 6.3W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 8nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Drain current: 1.7A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Power dissipation: 6.3W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 8nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
товару немає в наявності
В кошику
од. на суму грн.
IPN80R600P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Drain current: 5.5A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 7.4W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 20nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Drain current: 5.5A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 7.4W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 20nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
товару немає в наявності
В кошику
од. на суму грн.
IPN80R750P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 7.2W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 7.2W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
товару немає в наявності
В кошику
од. на суму грн.
IPI020N06NAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IPG20N06S4L11ATMA2 |
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на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 62.61 грн |
PVU414SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 1550 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 509.21 грн |
IRGB6B60KDPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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ISC019N03L5SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 69W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 69W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PG-TDSON-8
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TLE42744DV50ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...40V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...40V
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IPU60R1K5CEAKMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
75+ | 14.61 грн |
S80KS2564GACHI040 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S80KS2564GACHI043 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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IRF8910TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
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TD250N16KOF |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.6kV
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.6kV
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TD215N22KOFHPSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Max. load current: 410A
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Max. load current: 410A
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
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TD210N12KOF |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V
Max. load current: 410A
Max. forward voltage: 1.65V
Load current: 210A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V
Max. load current: 410A
Max. forward voltage: 1.65V
Load current: 210A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
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TD250N18KOF |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.8kV
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.8kV
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XMC1100T038X0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
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XMC1100Q024F0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 8
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-VQFN-24
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 8
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-VQFN-24
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100T038F0016ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100T038F0032ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100Q024F0016ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 8
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-VQFN-24
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 8
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-VQFN-24
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100T016F0008ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 8kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 8kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100Q024F0008ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 8kBFLASH,16kBSRAM; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 8
Memory: 8kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-VQFN-24
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 8kBFLASH,16kBSRAM; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 8
Memory: 8kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-VQFN-24
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100Q040F0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-VQFN-40
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-VQFN-40
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100T016F0016ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100T016F0032ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100T016F0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100T016X0032ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100T016X0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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IRF2907ZSTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BTS3110N |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Case: PG-SOT223-4
On-state resistance: 0.2Ω
Mounting: SMD
Turn-on time: 45µs
Turn-off time: 60µs
Output voltage: 42V
Output current: 1.4A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®; SIPMOS™
Kind of integrated circuit: low-side
Operating temperature: -40...150°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Case: PG-SOT223-4
On-state resistance: 0.2Ω
Mounting: SMD
Turn-on time: 45µs
Turn-off time: 60µs
Output voltage: 42V
Output current: 1.4A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®; SIPMOS™
Kind of integrated circuit: low-side
Operating temperature: -40...150°C
на замовлення 2174 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 172.80 грн |
10+ | 103.09 грн |
14+ | 65.89 грн |
39+ | 62.01 грн |
500+ | 60.46 грн |
IRS2103STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Number of channels: 2
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Case: SO8
Power: 625mW
Turn-on time: 750ns
Turn-off time: 185ns
Output current: -600...290mA
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Number of channels: 2
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Case: SO8
Power: 625mW
Turn-on time: 750ns
Turn-off time: 185ns
Output current: -600...290mA
Type of integrated circuit: driver
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BSD223PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 1819 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.37 грн |
32+ | 12.40 грн |
50+ | 9.84 грн |
100+ | 8.91 грн |
156+ | 5.81 грн |
428+ | 5.50 грн |
BSL307SPH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.5A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.5A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.60 грн |
12+ | 35.11 грн |
58+ | 15.74 грн |
158+ | 14.96 грн |
IRFL4105TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
на замовлення 847 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.10 грн |
11+ | 35.50 грн |
25+ | 30.23 грн |
40+ | 22.94 грн |
109+ | 21.70 грн |
BSD214SNH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Case: SOT363
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Case: SOT363
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
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PVDZ172NSPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 1150 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 529.24 грн |
PVA2352NPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 4812 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 406.53 грн |
IPA70R360P7SXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
на замовлення 105 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 90.99 грн |
10+ | 72.86 грн |
19+ | 48.83 грн |
51+ | 46.51 грн |
IPAN70R360P7SXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
на замовлення 349 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 86.82 грн |
6+ | 72.09 грн |
10+ | 65.11 грн |
17+ | 55.04 грн |
45+ | 52.71 грн |
IPN70R360P7SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
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IPS70R360P7SAKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
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IPA050N10NM5SXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Pulsed drain current: 264A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Pulsed drain current: 264A
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BSZ150N10LS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IAUT150N10S5N035ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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од. на суму грн.
IPB50N10S3L16ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 94.33 грн |
IPP050N10NF2SAKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 968 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 90.99 грн |