Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148445) > Сторінка 467 з 2475
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
BSC0303LSATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 72µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
XC2361E136F128LRAAKXQMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 128MHz Program Memory Size: 1.06MB (1.06M x 8) RAM Size: 98K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x12b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Part Status: Active Number of I/O: 75 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IDD03SG60CXTMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 60pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BGA825L6SE6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: GPS Voltage - Supply: 1.5V ~ 3.6V Gain: 17dB Current - Supply: 4.8mA Noise Figure: 0.6dB P1dB: -10dBm Test Frequency: 1.575GHz Supplier Device Package: TSLP-6-3 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BGA825L6SE6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: GPS Voltage - Supply: 1.5V ~ 3.6V Gain: 17dB Current - Supply: 4.8mA Noise Figure: 0.6dB P1dB: -10dBm Test Frequency: 1.575GHz Supplier Device Package: TSLP-6-3 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BGS15MU14E6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-UFLGA Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SP5T RF Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V Insertion Loss: 1.05dB Frequency Range: 400MHz ~ 6GHz Test Frequency: 5.925GHz Isolation: 48dB Supplier Device Package: PG-ULGA-14-1 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BGS15MU14E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-UFLGA Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SP5T RF Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V Insertion Loss: 1.05dB Frequency Range: 400MHz ~ 6GHz Test Frequency: 5.925GHz Isolation: 48dB Supplier Device Package: PG-ULGA-14-1 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BGS17GA14E6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
на замовлення 8800 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PBL386212QNA | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Function: Subscriber Line Interface Circuit Interface: 2-Wire Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 2.8mA Supplier Device Package: P/PG-LCC-28-3 Number of Circuits: 1 Power (Watts): 290 mW |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PBL38621/2QNT-INF | Infineon Technologies |
Description: SLIC, BIPOLAR, PQCC28 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PBL38621/2QNT | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Function: Subscriber Line Interface Circuit Interface: 2-Wire Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 4mA Supplier Device Package: 28-PLCC Number of Circuits: 1 Power (Watts): 1.5 W |
на замовлення 1660 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
![]() |
IDW40G65C5B | Infineon Technologies |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BGT60TR13CE6327XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 119-WFBGA, WLBGA Output Type: Digital Mounting Type: Surface Mount Frequency: 57GHz ~ 64GHz Type: TxRx Only Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 3.3V Power - Output: 14.5dBm Sensor Type: Radar Sensor Protocol: LTE Current - Receiving: 428mA ~ 635mA Data Rate (Max): 100Mbps Current - Transmitting: 550mA Supplier Device Package: PG-WFWLB-119-1 Modulation: GFSK RF Family/Standard: Cellular Serial Interfaces: SPI Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BGT60TR13CE6327XUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 119-WFBGA, WLBGA Output Type: Digital Mounting Type: Surface Mount Frequency: 57GHz ~ 64GHz Type: TxRx Only Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 3.3V Power - Output: 14.5dBm Sensor Type: Radar Sensor Protocol: LTE Current - Receiving: 428mA ~ 635mA Data Rate (Max): 100Mbps Current - Transmitting: 550mA Supplier Device Package: PG-WFWLB-119-1 Modulation: GFSK RF Family/Standard: Cellular Serial Interfaces: SPI Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3906 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
TZ500N16KOFHPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 669 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Part Status: Active Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 1.6 kV |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
TZ500N14KOFHPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 669 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 1.4 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
TZ600N14KOFHPSA1 | Infineon Technologies |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
REFFRIDGED111TRC2SLTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IMD111T-6F040, IKD04N60RC2 Supplied Contents: Board(s), Cable(s) Primary Attributes: Compressor Embedded: Yes, MCU Part Status: Active Contents: Board(s), Cable(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
TLV49645TBXALA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: Temperature Compensated Package / Case: TO-226-3, TO-92-3 Short Body Output Type: Open Drain Polarization: South Pole Mounting Type: Through Hole Function: Unipolar Switch Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3V ~ 26V Technology: Hall Effect Sensing Range: 10.4mT Trip, 2.8mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: TO-92S Test Condition: 25°C Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
TLI49631MXTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: Temperature Compensated Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Latch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 5.5V Technology: Hall Effect Sensing Range: 3.5mT Trip, -3.5mT Release Current - Output (Max): 5mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SOT23-3-15 Test Condition: 25°C Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
BSM400GA170DLS | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 3120 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 27 nF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
![]() |
IPB80P03P4L07ATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
KITIM69D127V11FLEXTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IM69D127V11 Packaging: Bulk Function: MEMS Omnidirectional Microphones Type: Audio Utilized IC / Part: IM69D127V11 Supplied Contents: Board(s) Primary Attributes: Digital Output Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
IFX2931GV33 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: PG-DSO-8-1 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 80dB (120Hz) Voltage Dropout (Max): 1.1V @ 100mA Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 15 mA |
на замовлення 1648 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
IFX8117MEV33 | Infineon Technologies |
![]() |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
TLE4954CE4807BAMA1 | Infineon Technologies |
![]() |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
![]() |
BAV 99 E6433 | Infineon Technologies |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
ISP06P008NSATMA1 | Infineon Technologies |
Description: MOSFET P-CH SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Supplier Device Package: PG-SOT223 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
IAUC100N04S6L014ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
IAUC100N04S6L014ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 22919 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
IRFI7446GPBF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V Power Dissipation (Max): 40.5W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Full-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BSF030NE2LQXUMA1 | Infineon Technologies |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BSF030NE2LQXUMA1 | Infineon Technologies |
![]() |
на замовлення 4785 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
TLF4949EJ | Infineon Technologies |
![]() |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
BSF083N03LQG | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
![]() |
BSC205N10LSG | Infineon Technologies |
![]() |
на замовлення 5751 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BSC029N025SG | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V |
на замовлення 8868 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BSC886N03LSGATMA1 | Infineon Technologies |
![]() |
на замовлення 8585 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BAS70E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 70mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
на замовлення 107857 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
IPL65R130CFD7AUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 420µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IPL65R130CFD7AUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 420µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IPT039N15N5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 257µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IPT039N15N5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 257µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V |
на замовлення 569 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BAT1706WE6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Common Anode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: SOT-323 Current - Max: 130 mA Power Dissipation (Max): 150 mW |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
TT162N14KOFHPSA2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 162 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 260 A Voltage - Off State: 1.4 kV |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
CY25404ZXI012 | Infineon Technologies |
![]() Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 2172 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
CY25404ZXI011 | Infineon Technologies |
![]() Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 3053 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BGT60LTR11AIPE6327XUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 42-BGA Mounting Type: Surface Mount Frequency: 60GHz Type: TxRx + MCU Voltage - Supply: 1.5V ~ 5V Protocol: ISM Supplier Device Package: PG-UF2BGA-42 RF Family/Standard: General ISM > 1GHz Serial Interfaces: SPI Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BGT60LTR11AIPE6327XUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 42-BGA Mounting Type: Surface Mount Frequency: 60GHz Type: TxRx + MCU Voltage - Supply: 1.5V ~ 5V Protocol: ISM Supplier Device Package: PG-UF2BGA-42 RF Family/Standard: General ISM > 1GHz Serial Interfaces: SPI Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3343 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SHIELDBGT60LTR11AIPTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Radar Type: Sensor Contents: Board(s) Utilized IC / Part: BGT60LTR11AIP Platform: Arduino MKR Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
94-3250 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MQ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DIRECTFET™ MQ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IRF6601 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MT Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DIRECTFET™ MT Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IRF6602 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MQ Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: DIRECTFET™ MQ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BCR521E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
DDB6U50N16W1RPB11BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Single Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A NTC Thermistor: No Supplier Device Package: AG-EASY1B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 6.2 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
TLS850C2TEV50BOARDTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Voltage - Output: 5V Voltage - Input: 3V ~ 40V Current - Output: 500mA Regulator Type: Positive Fixed Board Type: Fully Populated Utilized IC / Part: TLS850C2TEV50 Supplied Contents: Board(s) Channels per IC: 1 - Single Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
STT3300N18P76XPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK BG-PS76-1 Packaging: Tray Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
BSO065N03MSGXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SAL-TC270TP-64F200NDC | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
TC277TP64F200SDCKXUMA3 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active Number of I/O: 169 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
BSC0303LSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
XC2361E136F128LRAAKXQMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 98K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Active
Number of I/O: 75
Description: IC MCU 16BIT 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 98K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Active
Number of I/O: 75
товару немає в наявності
В кошику
од. на суму грн.
IDD03SG60CXTMA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
BGA825L6SE6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
BGA825L6SE6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
BGS15MU14E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Packaging: Tape & Reel (TR)
Package / Case: 14-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.05dB
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 48dB
Supplier Device Package: PG-ULGA-14-1
Part Status: Active
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Packaging: Tape & Reel (TR)
Package / Case: 14-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.05dB
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 48dB
Supplier Device Package: PG-ULGA-14-1
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
BGS15MU14E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Packaging: Cut Tape (CT)
Package / Case: 14-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.05dB
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 48dB
Supplier Device Package: PG-ULGA-14-1
Part Status: Active
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Packaging: Cut Tape (CT)
Package / Case: 14-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.05dB
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 48dB
Supplier Device Package: PG-ULGA-14-1
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
BGS17GA14E6327XTSA1 |
![]() |
на замовлення 8800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1065+ | 21.09 грн |
PBL386212QNA |
![]() |
Виробник: Infineon Technologies
Description: BIPOLAR SLIC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Number of Circuits: 1
Power (Watts): 290 mW
Description: BIPOLAR SLIC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Number of Circuits: 1
Power (Watts): 290 mW
на замовлення 750 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
172+ | 126.97 грн |
PBL38621/2QNT |
![]() |
Виробник: Infineon Technologies
Description: PBL38621/2 - FLEXISLIC, SUBSCRIB
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 4mA
Supplier Device Package: 28-PLCC
Number of Circuits: 1
Power (Watts): 1.5 W
Description: PBL38621/2 - FLEXISLIC, SUBSCRIB
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 4mA
Supplier Device Package: 28-PLCC
Number of Circuits: 1
Power (Watts): 1.5 W
на замовлення 1660 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
41+ | 536.18 грн |
IDW40G65C5B |
![]() |
Виробник: Infineon Technologies
Description: IDW40G65 - COOLSIC SCHOTTKY DIOD
Description: IDW40G65 - COOLSIC SCHOTTKY DIOD
товару немає в наявності
В кошику
од. на суму грн.
BGT60TR13CE6327XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Tape & Reel (TR)
Package / Case: 119-WFBGA, WLBGA
Output Type: Digital
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Sensor Type: Radar Sensor
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Tape & Reel (TR)
Package / Case: 119-WFBGA, WLBGA
Output Type: Digital
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Sensor Type: Radar Sensor
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
BGT60TR13CE6327XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Cut Tape (CT)
Package / Case: 119-WFBGA, WLBGA
Output Type: Digital
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Sensor Type: Radar Sensor
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Cut Tape (CT)
Package / Case: 119-WFBGA, WLBGA
Output Type: Digital
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Sensor Type: Radar Sensor
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3906 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1289.21 грн |
10+ | 1080.76 грн |
25+ | 1025.20 грн |
100+ | 890.50 грн |
250+ | 847.65 грн |
500+ | 844.32 грн |
TZ500N16KOFHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 1050A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 1050A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 14859.36 грн |
TZ500N14KOFHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
товару немає в наявності
В кошику
од. на суму грн.
TZ600N14KOFHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 1050A MODULE
Description: SCR MODULE 1.6KV 1050A MODULE
товару немає в наявності
В кошику
од. на суму грн.
REFFRIDGED111TRC2SLTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMD111T-6F040, IKD04N60RC2
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Compressor
Embedded: Yes, MCU
Part Status: Active
Contents: Board(s), Cable(s)
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMD111T-6F040, IKD04N60RC2
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Compressor
Embedded: Yes, MCU
Part Status: Active
Contents: Board(s), Cable(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 14854.58 грн |
TLV49645TBXALA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR TO92S
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH UNIPOLAR TO92S
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
TLI49631MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH LATCH SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 28.65 грн |
13+ | 24.37 грн |
14+ | 23.07 грн |
25+ | 20.14 грн |
50+ | 19.12 грн |
100+ | 18.17 грн |
500+ | 16.02 грн |
1000+ | 15.33 грн |
BSM400GA170DLS |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3120 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3120 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 11748.14 грн |
IPB80P03P4L07ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
KITIM69D127V11FLEXTOBO1 |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IM69D127V11
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM69D127V11
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Active
Description: EVAL BOARD FOR IM69D127V11
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM69D127V11
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2089.00 грн |
IFX2931GV33 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED POS LDO REG
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.1V @ 100mA
Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
Description: IC REG LINEAR FIXED POS LDO REG
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.1V @ 100mA
Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
на замовлення 1648 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1648+ | 14.31 грн |
IFX8117MEV33 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Description: IC REG LINEAR FIXED LDO REG
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1501+ | 16.59 грн |
TLE4954CE4807BAMA1 |
![]() |
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Description: SPEED & CURRENT SENSORS
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
152+ | 144.04 грн |
BAV 99 E6433 |
![]() |
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT23
Description: DIODE ARRAY GP 80V 200MA SOT23
товару немає в наявності
В кошику
од. на суму грн.
ISP06P008NSATMA1 |
Виробник: Infineon Technologies
Description: MOSFET P-CH SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-SOT223
Part Status: Obsolete
Description: MOSFET P-CH SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-SOT223
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
IAUC100N04S6L014ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 36.93 грн |
IAUC100N04S6L014ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
на замовлення 22919 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 139.27 грн |
10+ | 85.45 грн |
100+ | 57.51 грн |
500+ | 42.76 грн |
1000+ | 39.16 грн |
2000+ | 36.12 грн |
IRFI7446GPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Power Dissipation (Max): 40.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
Description: MOSFET N-CH 40V 80A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Power Dissipation (Max): 40.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
338+ | 64.74 грн |
BSF030NE2LQXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 24A/75A 2WDSON
Description: MOSFET N-CH 25V 24A/75A 2WDSON
товару немає в наявності
В кошику
од. на суму грн.
BSF030NE2LQXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 24A/75A 2WDSON
Description: MOSFET N-CH 25V 24A/75A 2WDSON
на замовлення 4785 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 84.36 грн |
10+ | 72.96 грн |
100+ | 56.83 грн |
500+ | 44.06 грн |
1000+ | 34.79 грн |
2000+ | 32.47 грн |
TLF4949EJ |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR VOLT TLF4949
Description: IC REG LINEAR VOLT TLF4949
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
737+ | 32.57 грн |
BSF083N03LQG |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
717+ | 32.07 грн |
BSC205N10LSG |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 5751 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
662+ | 34.04 грн |
BSC029N025SG |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
на замовлення 8868 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
402+ | 59.69 грн |
BSC886N03LSGATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/65A TDSON
Description: MOSFET N-CH 30V 13A/65A TDSON
на замовлення 8585 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1205+ | 20.08 грн |
BAS70E6327 |
![]() |
Виробник: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 107857 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3893+ | 6.37 грн |
IPL65R130CFD7AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
IPL65R130CFD7AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
IPT039N15N5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
товару немає в наявності
В кошику
од. на суму грн.
IPT039N15N5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
на замовлення 569 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 600.04 грн |
10+ | 393.13 грн |
100+ | 288.77 грн |
500+ | 240.99 грн |
BAT1706WE6327 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOT-323
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: DIODE SCHOTTKY 4V 150MW SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOT-323
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3406+ | 6.61 грн |
TT162N14KOFHPSA2 |
![]() |
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.4 kV
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.4 kV
на замовлення 8 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 10584.27 грн |
CY25404ZXI012 |
![]() |
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 2172 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
25+ | 918.71 грн |
CY25404ZXI011 |
![]() |
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 3053 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
33+ | 702.17 грн |
BGT60LTR11AIPE6327XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Tape & Reel (TR)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Tape & Reel (TR)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
BGT60LTR11AIPE6327XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Cut Tape (CT)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Cut Tape (CT)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3343 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 956.56 грн |
10+ | 717.75 грн |
25+ | 656.44 грн |
100+ | 545.38 грн |
250+ | 507.84 грн |
500+ | 483.53 грн |
1000+ | 454.74 грн |
SHIELDBGT60LTR11AIPTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR BGT60LTR11AIP
Packaging: Bulk
Function: Radar
Type: Sensor
Contents: Board(s)
Utilized IC / Part: BGT60LTR11AIP
Platform: Arduino MKR
Part Status: Active
Description: EVAL BOARD FOR BGT60LTR11AIP
Packaging: Bulk
Function: Radar
Type: Sensor
Contents: Board(s)
Utilized IC / Part: BGT60LTR11AIP
Platform: Arduino MKR
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
94-3250 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Description: MOSFET N-CH 30V 12A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
IRF6601 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 26A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V
Description: MOSFET N-CH 20V 26A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
IRF6602 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 11A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V
Description: MOSFET N-CH 20V 11A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
BCR521E6327 |
![]() |
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
товару немає в наявності
В кошику
од. на суму грн.
DDB6U50N16W1RPB11BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3071.83 грн |
10+ | 2209.04 грн |
30+ | 2007.39 грн |
TLS850C2TEV50BOARDTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: TLS850C2TE V50 BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850C2TEV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
Description: TLS850C2TE V50 BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850C2TEV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4284.64 грн |
STT3300N18P76XPSA1 |
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
Part Status: Active
Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
BSO065N03MSGXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Description: MOSFET N-CH 30V 13A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
SAL-TC270TP-64F200NDC |
![]() |
Виробник: Infineon Technologies
Description: TC270 - RISC FLASH MICROCONTROLL
Packaging: Bulk
Part Status: Active
Description: TC270 - RISC FLASH MICROCONTROLL
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
TC277TP64F200SDCKXUMA3 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.