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BTS70401EPZXUMA1 BTS70401EPZXUMA1 Infineon Technologies Infineon-BTS7040-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5ad8af11c4 Description: PROFET PG-TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3378 шт:
термін постачання 21-31 дні (днів)
4+97.94 грн
10+68.82 грн
25+62.34 грн
100+51.86 грн
250+48.68 грн
500+46.77 грн
1000+44.45 грн
Мінімальне замовлення: 4
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CY7C1312KV18-250BZC CY7C1312KV18-250BZC Infineon Technologies download Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 336 шт:
термін постачання 21-31 дні (днів)
11+2202.71 грн
Мінімальне замовлення: 11
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IPD90P03P404ATMA2 IPD90P03P404ATMA2 Infineon Technologies Infineon-IPD90P03P4-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07ecafdb27ed Description: MOSFET P-CH 30V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO252-3-11
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+56.08 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD90P03P404ATMA2 IPD90P03P404ATMA2 Infineon Technologies Infineon-IPD90P03P4-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07ecafdb27ed Description: MOSFET P-CH 30V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO252-3-11
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10986 шт:
термін постачання 21-31 дні (днів)
3+160.19 грн
10+112.14 грн
100+82.05 грн
500+63.28 грн
1000+62.03 грн
Мінімальне замовлення: 3
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IPB80P03P405ATMA2 IPB80P03P405ATMA2 Infineon Technologies Infineon-IPx80P03P4-05-DS-v01_00-EN.pdf?fileId=db3a30431ddc9372011e07ef59f52807 Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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DEMOBOARDTLE4242GTOBO1 DEMOBOARDTLE4242GTOBO1 Infineon Technologies fundamentals-of-power-semiconductors Description: EVAL BOARD FOR TLE4242G
Packaging: Box
Voltage - Output: 6V ~ 8V
Voltage - Input: 8V ~ 16V
Current - Output / Channel: 370mA
Utilized IC / Part: TLE4242G
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+3237.89 грн
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CY8C28433-24PVXIT CY8C28433-24PVXIT Infineon Technologies download Description: IC MCU 8BIT 16KB FLASH 28SSOP
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BGB 420 E6327 BGB 420 E6327 Infineon Technologies BGB420.pdf Description: IC AMP 802.15 100MHZ-3GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 3.5V
Gain: 16dB
Current - Supply: 30mA
Noise Figure: 2dB
P1dB: 10dBm
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
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FZ1000R33HL3B60BOSA1 Infineon Technologies Description: IHV IHM T XHP 3 3-6 5K AG-IHVB13
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1.6 MW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
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CY9BF518SPMC-GK7E1 CY9BF518SPMC-GK7E1 Infineon Technologies Infineon-CY9B510T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edeaf65639f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 122
DigiKey Programmable: Not Verified
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CY9BF516NBGL-GE1 CY9BF516NBGL-GE1 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 512KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
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IPI032N06N3GE8214AKSA1 Infineon Technologies Description: MOSFET N-CH 60V TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
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BSL316CL6327 BSL316CL6327 Infineon Technologies INFNS15767-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
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IPL60R185C7AUMA1 IPL60R185C7AUMA1 Infineon Technologies Infineon-IPL60R185C7-DS-v02_01-EN.pdf?fileId=5546d462518ffd850151b42d65c55913 Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
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IPD70P04P4L08ATMA2 IPD70P04P4L08ATMA2 Infineon Technologies Infineon-IPD70P04P4L-08-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f78225bd32dbf Description: MOSFET P-CH 40V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10096 шт:
термін постачання 21-31 дні (днів)
4+109.56 грн
10+79.77 грн
100+58.67 грн
500+44.53 грн
1000+41.12 грн
Мінімальне замовлення: 4
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IPD70P04P4L08ATMA1 IPD70P04P4L08ATMA1 Infineon Technologies Infineon-IPD70P04P4L_08-DS-v01_01-en.pdf?fileId=db3a30432f69f146012f78225bd32dbf Description: MOSFET P-CH 40V 70A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+42.51 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD70P04P4L08ATMA1 IPD70P04P4L08ATMA1 Infineon Technologies Infineon-IPD70P04P4L_08-DS-v01_01-en.pdf?fileId=db3a30432f69f146012f78225bd32dbf Description: MOSFET P-CH 40V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4998 шт:
термін постачання 21-31 дні (днів)
3+151.06 грн
10+92.56 грн
100+62.46 грн
500+46.51 грн
1000+42.62 грн
Мінімальне замовлення: 3
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FD300R17KE4PHOSA1 FD300R17KE4PHOSA1 Infineon Technologies Infineon-FD300R17KE4P-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a54c865b65577 Description: IGBT MODULE 1700V 300A AG62MM-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
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F3L200R07W2S5B11BOMA1 F3L200R07W2S5B11BOMA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-2
Packaging: Bulk
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
5+4996.85 грн
Мінімальне замовлення: 5
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F3L200R07W2S5B11BOMA1 F3L200R07W2S5B11BOMA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+5665.68 грн
15+4944.62 грн
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BTS133TCAUMA1 BTS133TCAUMA1 Infineon Technologies Description: IC PWR SWITCH
Packaging: Tape & Reel (TR)
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Not For New Designs
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BTS500701TMAATMA1 BTS500701TMAATMA1 Infineon Technologies BTS50070-1TMA_Sept2008.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BTS500701TMBAKSA1 BTS500701TMBAKSA1 Infineon Technologies BTS50070-1TMB_Sept2008.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tube
Package / Case: TO-220-7
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-12
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BCR 196T E6327 BCR 196T E6327 Infineon Technologies BCR196%20%282006%29.pdf Description: TRANS PREBIAS PNP 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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BCR 196F E6327 BCR 196F E6327 Infineon Technologies bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db Description: TRANS PREBIAS PNP 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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BCR 196L3 E6327 BCR 196L3 E6327 Infineon Technologies BCR196%20%282006%29.pdf Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
товару немає в наявності
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EVALM13645ATOBO2 EVALM13645ATOBO2 Infineon Technologies Infineon-AN2016-15_EVAL-M1-36-45A_User_Manual-UM-v01_02-EN.pdf?fileId=5546d4625cc9456a015d2b0ce2497e69 Description: EVAL BOARD FOR IRSM836-045MA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IRSM836-045MA
Supplied Contents: Board(s)
Primary Attributes: 165VAC ~ 265VAC
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+8782.38 грн
В кошику  од. на суму  грн.
BSM100GB120DN2K Infineon Technologies EUPCS02845-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
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IDC05S60CEX1SA1 Infineon Technologies IDC05S60CE.pdf Description: DIODE SIC 600V 5A SAWN WAFER
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SIDC07D60F6X1SA2 Infineon Technologies SIDC07D60F6_L4364M.pdf?folderId=db3a304412b407950112b435f2e4642a&fileId=db3a304412b407950112b435f361642b Description: DIODE GP 600V 22.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 22.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC03D60F6X1SA2 Infineon Technologies SIDC03D60F6_L4324M.pdf?folderId=db3a304412b407950112b435eacc6416&fileId=db3a304412b407950112b435eb496417 Description: DIODE GP 600V 6A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC02D60C6X1SA4 Infineon Technologies SIDC02D60C6.pdf Description: DIODE GP 600V 6A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC03D120H6X1SA3 Infineon Technologies SIDC03D120H6.pdf Description: DIODE GP 1.2KV 3A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC03D60C6X1SA2 Infineon Technologies SIDC03D60C6.pdf Description: DIODE GP 600V 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC05D60C6X1SA2 Infineon Technologies SIDC05D60C6.pdf Description: DIODE GP 600V 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC02D60F6X1SA1 Infineon Technologies SIDC02D60F6_L4314M.pdf?folderId=db3a304314dca3890115122467810c94&fileId=db3a3043271faefd0127718d00506e36 Description: DIODE GP 600V 3A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
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SIDC02D60C8F1SA1 Infineon Technologies Description: DIODE SWITCHING 600V 6A WAFER
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SIDC07D60F6X7SA1 Infineon Technologies Description: DIODE SWITCHING 600V WAFER
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SIDC07D60F6X1SA5 Infineon Technologies SIDC07D60F6_ed2.1_9-3-10.pdf Description: DIODE SWITCHING 600V WAFER
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SIDC03D120F6X1SA1 Infineon Technologies SIDC03D120F6_L4375M.pdf?folderId=db3a304412b407950112b439c4b16eaf&fileId=db3a304412b407950112b439c53d6eb0 Description: DIODE GP 1.2KV 2A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 2 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC07D60E6X1SA1 Infineon Technologies Infineon-SIDC07D60E6_L4293M-DS-v01_00-en.pdf?fileId=db3a30433e30e4bf013e402a6d9f1096 Description: DIODE GP 600V 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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SIDC03D60C8X7SA2 Infineon Technologies Description: DIODE SWITCHING 600V 10A WAFER
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BCR166E6393HTSA1 BCR166E6393HTSA1 Infineon Technologies SIEMD095-687.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
на замовлення 190000 шт:
термін постачання 21-31 дні (днів)
8955+2.15 грн
Мінімальне замовлення: 8955
В кошику  од. на суму  грн.
MB96F646RBPMC-GS-107JAE2 MB96F646RBPMC-GS-107JAE2 Infineon Technologies Description: IC MCU 16BIT 288KB FLASH 100LQFP
товару немає в наявності
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IRFH8321TRPBF IRFH8321TRPBF Infineon Technologies IRFH8321PBF.pdf Description: MOSFET N CH 30V 21A PQFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.4W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
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BTT3050EJXUMA1 BTT3050EJXUMA1 Infineon Technologies Infineon-BTT3050EJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f07f285a22bc2 Description: 50 M SINGLE CHANNEL SMART LOW-SI
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
на замовлення 22400 шт:
термін постачання 21-31 дні (днів)
3000+59.00 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BTT3050EJXUMA1 BTT3050EJXUMA1 Infineon Technologies Infineon-BTT3050EJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f07f285a22bc2 Description: 50 M SINGLE CHANNEL SMART LOW-SI
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
на замовлення 22620 шт:
термін постачання 21-31 дні (днів)
2+198.37 грн
10+123.81 грн
100+85.15 грн
500+65.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS129E3045ANTMA1 BTS129E3045ANTMA1 Infineon Technologies INFNS05889-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 17A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)
71+337.64 грн
Мінімальне замовлення: 71
В кошику  од. на суму  грн.
BSZ039N06NSATMA1 BSZ039N06NSATMA1 Infineon Technologies Infineon-BSZ039N06NS-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53c25c8e532d Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
на замовлення 1118 шт:
термін постачання 21-31 дні (днів)
4+92.96 грн
10+76.97 грн
25+72.57 грн
100+62.47 грн
250+59.08 грн
500+56.68 грн
1000+53.53 грн
Мінімальне замовлення: 4
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IRS2007MTRPBFXUMA1 IRS2007MTRPBFXUMA1 Infineon Technologies Infineon-IRS2007S-M-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae53e02c239bf Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
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IRS2007MTRPBFXUMA1 IRS2007MTRPBFXUMA1 Infineon Technologies Infineon-IRS2007S-M-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae53e02c239bf Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2538 шт:
термін постачання 21-31 дні (днів)
5+74.70 грн
10+51.71 грн
25+46.68 грн
100+38.61 грн
250+36.13 грн
500+34.64 грн
1000+32.87 грн
Мінімальне замовлення: 5
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CYW20730A1KMLGT CYW20730A1KMLGT Infineon Technologies CYW20730_RevJ_4-25-17.pdf Description: IC RF TXRX+MCU BLUETOOTH 40VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.6mA
Data Rate (Max): 1Mbps
Current - Transmitting: 24mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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IPP062NE7N3G IPP062NE7N3G Infineon Technologies INFNS15857-1.pdf?t.download=true&u=5oefqw Description: IPP062NE7 - 12V-300V N-CHANNEL P
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TLE92464EDHPEVALBRD TLE92464EDHPEVALBRD Infineon Technologies Infineon-Next-Generation-Solenoid-Driver-Evaluation-Kit-TLE92464ED-TLE92466ED-UserManual-v01_00-EN.pdf?fileId=5546d4627956d53f0179a35c55ba0baf Description: EVAL BOARD FOR TLE92464EDHP ARDU
Packaging: Bulk
Function: Solenoid Controller/Driver
Type: Power Management
Utilized IC / Part: TLE92464EDHP
Supplied Contents: Board(s)
Primary Attributes: 40V Supply
Embedded: No
Part Status: Active
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EVALIKA15N65ET6TOBO1 EVALIKA15N65ET6TOBO1 Infineon Technologies Infineon-EVAL-IKA15N65ET6-UserManual-v01_10-EN.pdf?fileId=8ac78c8c80f4d329018113d61dcf5eb1 Description: EVAL BOARD FOR IKA15N65ET6
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IKA15N65ET6
Supplied Contents: Board(s)
Primary Attributes: 165VAC ~ 265VAC
Embedded: No
Part Status: Active
Secondary Attributes: On-Board Test Points
Contents: Board(s)
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TLF42772ELXUMA1 TLF42772ELXUMA1 Infineon Technologies Infineon-TLF4277-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e999fd3f16 Description: IC REG LIN POS ADJ 300MA 14SSOP
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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IRF7353D2TRPBF IRF7353D2TRPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
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AUIRFR4620TRL AUIRFR4620TRL Infineon Technologies INFN-S-A0002298851-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+142.90 грн
Мінімальне замовлення: 3000
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AUIRFR4620TRL AUIRFR4620TRL Infineon Technologies INFN-S-A0002298851-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5224 шт:
термін постачання 21-31 дні (днів)
1+381.81 грн
10+244.90 грн
100+175.15 грн
500+158.07 грн
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ETD540N22P60TIMHPSA1 Infineon Technologies Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
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BTS70401EPZXUMA1 Infineon-BTS7040-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5ad8af11c4
BTS70401EPZXUMA1
Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3378 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.94 грн
10+68.82 грн
25+62.34 грн
100+51.86 грн
250+48.68 грн
500+46.77 грн
1000+44.45 грн
Мінімальне замовлення: 4
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CY7C1312KV18-250BZC download
CY7C1312KV18-250BZC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 336 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+2202.71 грн
Мінімальне замовлення: 11
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IPD90P03P404ATMA2 Infineon-IPD90P03P4-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07ecafdb27ed
IPD90P03P404ATMA2
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO252-3-11
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+56.08 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD90P03P404ATMA2 Infineon-IPD90P03P4-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07ecafdb27ed
IPD90P03P404ATMA2
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO252-3-11
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10986 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+160.19 грн
10+112.14 грн
100+82.05 грн
500+63.28 грн
1000+62.03 грн
Мінімальне замовлення: 3
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IPB80P03P405ATMA2 Infineon-IPx80P03P4-05-DS-v01_00-EN.pdf?fileId=db3a30431ddc9372011e07ef59f52807
IPB80P03P405ATMA2
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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DEMOBOARDTLE4242GTOBO1 fundamentals-of-power-semiconductors
DEMOBOARDTLE4242GTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE4242G
Packaging: Box
Voltage - Output: 6V ~ 8V
Voltage - Input: 8V ~ 16V
Current - Output / Channel: 370mA
Utilized IC / Part: TLE4242G
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3237.89 грн
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CY8C28433-24PVXIT download
CY8C28433-24PVXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
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BGB 420 E6327 BGB420.pdf
BGB 420 E6327
Виробник: Infineon Technologies
Description: IC AMP 802.15 100MHZ-3GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 3.5V
Gain: 16dB
Current - Supply: 30mA
Noise Figure: 2dB
P1dB: 10dBm
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
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FZ1000R33HL3B60BOSA1
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB13
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1.6 MW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
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CY9BF518SPMC-GK7E1 Infineon-CY9B510T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edeaf65639f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF518SPMC-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 122
DigiKey Programmable: Not Verified
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CY9BF516NBGL-GE1 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF516NBGL-GE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
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IPI032N06N3GE8214AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
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BSL316CL6327 INFNS15767-1.pdf?t.download=true&u=5oefqw
BSL316CL6327
Виробник: Infineon Technologies
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
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IPL60R185C7AUMA1 Infineon-IPL60R185C7-DS-v02_01-EN.pdf?fileId=5546d462518ffd850151b42d65c55913
IPL60R185C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
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IPD70P04P4L08ATMA2 Infineon-IPD70P04P4L-08-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f78225bd32dbf
IPD70P04P4L08ATMA2
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10096 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+109.56 грн
10+79.77 грн
100+58.67 грн
500+44.53 грн
1000+41.12 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD70P04P4L08ATMA1 Infineon-IPD70P04P4L_08-DS-v01_01-en.pdf?fileId=db3a30432f69f146012f78225bd32dbf
IPD70P04P4L08ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 70A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+42.51 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD70P04P4L08ATMA1 Infineon-IPD70P04P4L_08-DS-v01_01-en.pdf?fileId=db3a30432f69f146012f78225bd32dbf
IPD70P04P4L08ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+151.06 грн
10+92.56 грн
100+62.46 грн
500+46.51 грн
1000+42.62 грн
Мінімальне замовлення: 3
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FD300R17KE4PHOSA1 Infineon-FD300R17KE4P-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a54c865b65577
FD300R17KE4PHOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 300A AG62MM-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
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F3L200R07W2S5B11BOMA1
F3L200R07W2S5B11BOMA1
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Bulk
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+4996.85 грн
Мінімальне замовлення: 5
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F3L200R07W2S5B11BOMA1
F3L200R07W2S5B11BOMA1
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5665.68 грн
15+4944.62 грн
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BTS133TCAUMA1
BTS133TCAUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH
Packaging: Tape & Reel (TR)
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Not For New Designs
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BTS500701TMAATMA1 BTS50070-1TMA_Sept2008.pdf
BTS500701TMAATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BTS500701TMBAKSA1 BTS50070-1TMB_Sept2008.pdf
BTS500701TMBAKSA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tube
Package / Case: TO-220-7
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-12
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BCR 196T E6327 BCR196%20%282006%29.pdf
BCR 196T E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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BCR 196F E6327 bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db
BCR 196F E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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BCR 196L3 E6327 BCR196%20%282006%29.pdf
BCR 196L3 E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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EVALM13645ATOBO2 Infineon-AN2016-15_EVAL-M1-36-45A_User_Manual-UM-v01_02-EN.pdf?fileId=5546d4625cc9456a015d2b0ce2497e69
EVALM13645ATOBO2
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRSM836-045MA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IRSM836-045MA
Supplied Contents: Board(s)
Primary Attributes: 165VAC ~ 265VAC
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8782.38 грн
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BSM100GB120DN2K EUPCS02845-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
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IDC05S60CEX1SA1 IDC05S60CE.pdf
Виробник: Infineon Technologies
Description: DIODE SIC 600V 5A SAWN WAFER
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SIDC07D60F6X1SA2 SIDC07D60F6_L4364M.pdf?folderId=db3a304412b407950112b435f2e4642a&fileId=db3a304412b407950112b435f361642b
Виробник: Infineon Technologies
Description: DIODE GP 600V 22.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 22.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC03D60F6X1SA2 SIDC03D60F6_L4324M.pdf?folderId=db3a304412b407950112b435eacc6416&fileId=db3a304412b407950112b435eb496417
Виробник: Infineon Technologies
Description: DIODE GP 600V 6A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC02D60C6X1SA4 SIDC02D60C6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 600V 6A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC03D120H6X1SA3 SIDC03D120H6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 3A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC03D60C6X1SA2 SIDC03D60C6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 600V 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC05D60C6X1SA2 SIDC05D60C6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 600V 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC02D60F6X1SA1 SIDC02D60F6_L4314M.pdf?folderId=db3a304314dca3890115122467810c94&fileId=db3a3043271faefd0127718d00506e36
Виробник: Infineon Technologies
Description: DIODE GP 600V 3A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC02D60C8F1SA1
Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V 6A WAFER
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SIDC07D60F6X7SA1
Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V WAFER
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SIDC07D60F6X1SA5 SIDC07D60F6_ed2.1_9-3-10.pdf
Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V WAFER
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SIDC03D120F6X1SA1 SIDC03D120F6_L4375M.pdf?folderId=db3a304412b407950112b439c4b16eaf&fileId=db3a304412b407950112b439c53d6eb0
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 2A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 2 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC07D60E6X1SA1 Infineon-SIDC07D60E6_L4293M-DS-v01_00-en.pdf?fileId=db3a30433e30e4bf013e402a6d9f1096
Виробник: Infineon Technologies
Description: DIODE GP 600V 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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SIDC03D60C8X7SA2
Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V 10A WAFER
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BCR166E6393HTSA1 SIEMD095-687.pdf?t.download=true&u=5oefqw
BCR166E6393HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
на замовлення 190000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8955+2.15 грн
Мінімальне замовлення: 8955
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MB96F646RBPMC-GS-107JAE2
MB96F646RBPMC-GS-107JAE2
Виробник: Infineon Technologies
Description: IC MCU 16BIT 288KB FLASH 100LQFP
товару немає в наявності
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IRFH8321TRPBF IRFH8321PBF.pdf
IRFH8321TRPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 30V 21A PQFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.4W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
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BTT3050EJXUMA1 Infineon-BTT3050EJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f07f285a22bc2
BTT3050EJXUMA1
Виробник: Infineon Technologies
Description: 50 M SINGLE CHANNEL SMART LOW-SI
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
на замовлення 22400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+59.00 грн
Мінімальне замовлення: 3000
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BTT3050EJXUMA1 Infineon-BTT3050EJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f07f285a22bc2
BTT3050EJXUMA1
Виробник: Infineon Technologies
Description: 50 M SINGLE CHANNEL SMART LOW-SI
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
на замовлення 22620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+198.37 грн
10+123.81 грн
100+85.15 грн
500+65.26 грн
Мінімальне замовлення: 2
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BTS129E3045ANTMA1 INFNS05889-1.pdf?t.download=true&u=5oefqw
BTS129E3045ANTMA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 17A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
71+337.64 грн
Мінімальне замовлення: 71
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BSZ039N06NSATMA1 Infineon-BSZ039N06NS-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53c25c8e532d
BSZ039N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
на замовлення 1118 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+92.96 грн
10+76.97 грн
25+72.57 грн
100+62.47 грн
250+59.08 грн
500+56.68 грн
1000+53.53 грн
Мінімальне замовлення: 4
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IRS2007MTRPBFXUMA1 Infineon-IRS2007S-M-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae53e02c239bf
IRS2007MTRPBFXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
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IRS2007MTRPBFXUMA1 Infineon-IRS2007S-M-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae53e02c239bf
IRS2007MTRPBFXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2538 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+74.70 грн
10+51.71 грн
25+46.68 грн
100+38.61 грн
250+36.13 грн
500+34.64 грн
1000+32.87 грн
Мінімальне замовлення: 5
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CYW20730A1KMLGT CYW20730_RevJ_4-25-17.pdf
CYW20730A1KMLGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 40VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.6mA
Data Rate (Max): 1Mbps
Current - Transmitting: 24mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
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IPP062NE7N3G INFNS15857-1.pdf?t.download=true&u=5oefqw
IPP062NE7N3G
Виробник: Infineon Technologies
Description: IPP062NE7 - 12V-300V N-CHANNEL P
товару немає в наявності
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TLE92464EDHPEVALBRD Infineon-Next-Generation-Solenoid-Driver-Evaluation-Kit-TLE92464ED-TLE92466ED-UserManual-v01_00-EN.pdf?fileId=5546d4627956d53f0179a35c55ba0baf
TLE92464EDHPEVALBRD
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE92464EDHP ARDU
Packaging: Bulk
Function: Solenoid Controller/Driver
Type: Power Management
Utilized IC / Part: TLE92464EDHP
Supplied Contents: Board(s)
Primary Attributes: 40V Supply
Embedded: No
Part Status: Active
товару немає в наявності
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EVALIKA15N65ET6TOBO1 Infineon-EVAL-IKA15N65ET6-UserManual-v01_10-EN.pdf?fileId=8ac78c8c80f4d329018113d61dcf5eb1
EVALIKA15N65ET6TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IKA15N65ET6
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IKA15N65ET6
Supplied Contents: Board(s)
Primary Attributes: 165VAC ~ 265VAC
Embedded: No
Part Status: Active
Secondary Attributes: On-Board Test Points
Contents: Board(s)
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TLF42772ELXUMA1 Infineon-TLF4277-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e999fd3f16
TLF42772ELXUMA1
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 300MA 14SSOP
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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IRF7353D2TRPBF IR_PartNumberingSystem.pdf
IRF7353D2TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
товару немає в наявності
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AUIRFR4620TRL INFN-S-A0002298851-1.pdf?t.download=true&u=5oefqw
AUIRFR4620TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+142.90 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AUIRFR4620TRL INFN-S-A0002298851-1.pdf?t.download=true&u=5oefqw
AUIRFR4620TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5224 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+381.81 грн
10+244.90 грн
100+175.15 грн
500+158.07 грн
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ETD540N22P60TIMHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
товару немає в наявності
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