Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149672) > Сторінка 52 з 2495
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IRL530NSTRLPBF | Infineon Technologies |
 Description: MOSFET N-CH 100V 17A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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IRL540NSTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 36A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
на замовлення 27200 шт: термін постачання 21-31 дні (днів) |
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IRL540NSTRRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 36A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLL014NPBF | Infineon Technologies |
 Description: MOSFET N-CH 55V 2A SOT223Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLL2705PBF | Infineon Technologies |
Description: MOSFET N-CH 55V 3.8A SOT223 Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLL3303PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 4.6A SOT223 Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR120NPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 10A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR2703PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 23A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR2705PBF | Infineon Technologies |
Description: MOSFET N-CH 55V 28A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR2705TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 28A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR2905PBF | Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR2905TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR3103PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 55A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR3103TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 55A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR3103TRRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 55A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR3303PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 35A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 21A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D-Pak Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR3303TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 35A DPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR3410PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 17A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR3410TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 17A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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IRLR3714PBF | Infineon Technologies |
Description: MOSFET N-CH 20V 36A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR3714TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 36A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR3715TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 54A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR3715ZPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 49A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR3715ZTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 49A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR7821PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 65A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR7833TRRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 140A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLR7843PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 161A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 161A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V |
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IRLR8103VPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 91A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V |
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IRLR8103VTRRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 91A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V |
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В кошику од. на суму грн. | ||||||||||
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IRLR8113PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 94A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 15 V |
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В кошику од. на суму грн. | ||||||||||
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IRLR8503PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 44A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||||
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IRLR8503TRRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 44A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLZ24NSTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 18A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLZ44NSTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 47A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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IRLZ44NSTRRPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 47A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
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IRU3037CSPBF | Infineon Technologies |
Description: IC REG CTRLR BUCK/BOOST 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up, Step-Down Operating Temperature: 0°C ~ 70°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz Topology: Buck, Boost Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V Supplier Device Package: 8-SOIC Synchronous Rectifier: Yes Control Features: Enable, Soft Start Output Phases: 1 Duty Cycle (Max): 90% Clock Sync: No Part Status: Obsolete Number of Outputs: 1 |
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IRU3137CSTRPBF | Infineon Technologies |
Description: IC REG CTRLR BUCK 8SOIC |
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SI4410DYPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 10A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V |
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SI4420DYPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 12.5A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V |
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SI4435DYPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 8A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V |
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IRF6648TR1 | Infineon Technologies |
Description: MOSFET N-CH 60V 86A DIRECTFET MN Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 150µA Supplier Device Package: DIRECTFET™ MN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 25 V |
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IR3094MTRPBF | Infineon Technologies |
Description: IC REG CTRLR BUCK 48MLPQ Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: 0°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 200kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 8V ~ 16V Supplier Device Package: 48-MLPQ (7x7) Synchronous Rectifier: Yes Control Features: Enable, Frequency Control, Power Good, Soft Start Output Phases: 3 Duty Cycle (Max): 100% Clock Sync: No Part Status: Obsolete Number of Outputs: 3 |
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IR3094MPBF | Infineon Technologies |
Description: IC REG CTRLR BUCK 48MLPQ Packaging: Bag Package / Case: 48-VFQFN Exposed Pad Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: 0°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 200kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 8V ~ 16V Supplier Device Package: 48-MLPQ (7x7) Synchronous Rectifier: Yes Control Features: Enable, Frequency Control, Power Good, Soft Start Output Phases: 3 Duty Cycle (Max): 100% Clock Sync: No Part Status: Obsolete Number of Outputs: 3 |
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IRFB3077PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V |
на замовлення 471 шт: термін постачання 21-31 дні (днів) |
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ADM6996LX-AA-T-1 | Infineon Technologies |
Description: IC SW TX/FX CTRLR/PHY/MEM 128QFP Packaging: Tray Package / Case: 128-BFQFP Function: Switch Interface: Parallel Operating Temperature: 0°C ~ 115°C Voltage - Supply: 2.8V ~ 3.465V Protocol: Ethernet Standards: 10/100 Base-T/TX PHY Supplier Device Package: PG-BFQFP-128 Part Status: Discontinued at Digi-Key DigiKey Programmable: Not Verified |
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BCR401RE6327HTSA1 | Infineon Technologies |
Description: IC CURRENT SOURCE SOT143R Packaging: Tape & Reel (TR) Package / Case: SOT-143R Mounting Type: Surface Mount Function: Current Source Voltage - Input: 18V Current - Output: 60mA Supplier Device Package: PG-SOT-143R-3D Part Status: Not For New Designs |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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BCR402RE6327HTSA1 | Infineon Technologies |
Description: IC LED DRVR LIN 60MA SOT143R-4 Packaging: Tape & Reel (TR) Package / Case: SOT-143R Voltage - Output: 16V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Applications: Lighting Current - Output / Channel: 60mA Internal Switch(s): Yes Supplier Device Package: PG-SOT-143R-3D Voltage - Supply (Min): 1.2V Voltage - Supply (Max): 18V Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BCR402UE6327HTSA1 | Infineon Technologies |
Description: IC LED DRIVER LINEAR 65MA SC74-6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Applications: Lighting Current - Output / Channel: 65mA Internal Switch(s): Yes Supplier Device Package: PG-SC74-6 Voltage - Supply (Min): 1.4V Voltage - Supply (Max): 40V Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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BCR405UE6327HTSA1 | Infineon Technologies |
Description: IC LED DRIVER LINEAR 50MA SC74-6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Voltage - Output: 38V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Applications: Lighting Current - Output / Channel: 50mA Internal Switch(s): No Supplier Device Package: PG-SC74-6 Voltage - Supply (Min): 1.4V Voltage - Supply (Max): 40V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BFP640FE6327 | Infineon Technologies |
Description: RF TRANS NPN 4.5V 40GHZ 4-TSFP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 23dB Power - Max: 200mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Supplier Device Package: 4-TSFP Part Status: Obsolete |
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BGA612E6327HTSA1 | Infineon Technologies |
Description: IC AMP MMIC 80MA 2.8V SOT343 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BGA614E6327HTSA1 | Infineon Technologies |
Description: IC AMP CELLULAR 2.4GHZ SOT343 Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 0Hz ~ 2.4GHz RF Type: Cellular, GSM, PCS, CDMA, UMTS Voltage - Supply: 3V Gain: 17.5dB Current - Supply: 80mA Noise Figure: 2.1dB P1dB: 12dBm Test Frequency: 2GHz Supplier Device Package: PG-SOT343-3D Part Status: Obsolete |
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BGA616E6327HTSA1 | Infineon Technologies |
Description: IC AMP CELL 0HZ-2.7GHZ SOT343-4 Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 0Hz ~ 2.7GHz RF Type: Cellular, GSM, PCS, CDMA, UMTS Voltage - Supply: 4.5V Gain: 17.5dB Current - Supply: 80mA Noise Figure: 2.5dB P1dB: 18dBm Test Frequency: 1GHz Supplier Device Package: PG-SOT343-4-2 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BSC022N03SG | Infineon Technologies |
Description: MOSFET N-CH 30V 28A/100A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2V @ 110µA Supplier Device Package: PG-TDSON-8-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
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BSC032N03SG | Infineon Technologies |
Description: MOSFET N-CH 30V 23A/100A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: PG-TDSON-8-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 15 V |
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BSC079N03SG | Infineon Technologies |
Description: MOSFET N-CH 30V 14.6A/40A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 40A, 10V Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V |
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IFX1117GSV | Infineon Technologies |
Description: IC REG LIN POS ADJ 1A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: PG-SOT223-4 Voltage - Output (Max): 13.6V Voltage - Output (Min/Fixed): 1.25V Part Status: Obsolete PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.4V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPB100N06S3L-03 | Infineon Technologies |
Description: MOSFET N-CH 55V 100A TO263-3-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 230µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V |
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 |
IPDH4N03LAG | Infineon Technologies |
Description: MOSFET N-CH 25V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 60A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: PG-TO252-3-11 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V |
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В кошику од. на суму грн. | ||||||||||
 |
IPD5N03LAG | Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO252-3-11 |
товару немає в наявності |
В кошику од. на суму грн. |
| IRL530NSTRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 39.28 грн |
| 1600+ | 37.58 грн |
| 2400+ | 37.34 грн |
| 4000+ | 33.45 грн |
| IRL540NSTRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 27200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 57.19 грн |
| 1600+ | 54.03 грн |
| 2400+ | 52.03 грн |
| IRL540NSTRRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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В кошику
од. на суму грн.
| IRLL014NPBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 2A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Description: MOSFET N-CH 55V 2A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
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В кошику
од. на суму грн.
| IRLL2705PBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 3.8A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Description: MOSFET N-CH 55V 3.8A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
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В кошику
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| IRLL3303PBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
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| IRLR120NPBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
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| IRLR2703PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Description: MOSFET N-CH 30V 23A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
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од. на суму грн.
| IRLR2705PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
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од. на суму грн.
| IRLR2705TRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
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В кошику
од. на суму грн.
| IRLR2905PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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| IRLR2905TRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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| IRLR3103PBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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| IRLR3103TRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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| IRLR3103TRRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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| IRLR3303PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 35A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 21A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Description: MOSFET N-CH 30V 35A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 21A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
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| IRLR3303TRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 35A DPAK
Description: MOSFET N-CH 30V 35A DPAK
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| IRLR3410PBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
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| IRLR3410TRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 25.10 грн |
| 6000+ | 22.63 грн |
| 9000+ | 21.96 грн |
| IRLR3714PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Description: MOSFET N-CH 20V 36A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
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од. на суму грн.
| IRLR3714TRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Description: MOSFET N-CH 20V 36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
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| IRLR3715TRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 54A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
Description: MOSFET N-CH 20V 54A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
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од. на суму грн.
| IRLR3715ZPBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 49A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Description: MOSFET N-CH 20V 49A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
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од. на суму грн.
| IRLR3715ZTRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 49A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Description: MOSFET N-CH 20V 49A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
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од. на суму грн.
| IRLR7821PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 65A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Description: MOSFET N-CH 30V 65A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
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| IRLR7833TRRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 140A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
Description: MOSFET N-CH 30V 140A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
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| IRLR7843PBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 161A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
Description: MOSFET N-CH 30V 161A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
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| IRLR8103VPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 91A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Description: MOSFET N-CH 30V 91A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
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| IRLR8103VTRRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 91A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Description: MOSFET N-CH 30V 91A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
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| IRLR8113PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 94A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 15 V
Description: MOSFET N-CH 30V 94A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 15 V
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| IRLR8503PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 44A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Description: MOSFET N-CH 30V 44A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
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| IRLR8503TRRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 44A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Description: MOSFET N-CH 30V 44A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
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| IRLZ24NSTRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
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| IRLZ44NSTRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 47A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 55V 47A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 44.24 грн |
| 1600+ | 41.11 грн |
| 2400+ | 39.62 грн |
| 4000+ | 35.88 грн |
| IRLZ44NSTRRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 47A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 55V 47A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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| IRU3037CSPBF | |
|
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK/BOOST 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 90%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
Description: IC REG CTRLR BUCK/BOOST 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 90%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
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| IRU3137CSTRPBF |
|
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 8SOIC
Description: IC REG CTRLR BUCK 8SOIC
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| SI4410DYPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 10A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
Description: MOSFET N-CH 30V 10A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
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| SI4420DYPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Description: MOSFET N-CH 30V 12.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
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| SI4435DYPBF |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
Description: MOSFET P-CH 30V 8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
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| IRF6648TR1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 86A DIRECTFET MN
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 25 V
Description: MOSFET N-CH 60V 86A DIRECTFET MN
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 25 V
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| IR3094MTRPBF |
|
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 48MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 8V ~ 16V
Supplier Device Package: 48-MLPQ (7x7)
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control, Power Good, Soft Start
Output Phases: 3
Duty Cycle (Max): 100%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 3
Description: IC REG CTRLR BUCK 48MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 8V ~ 16V
Supplier Device Package: 48-MLPQ (7x7)
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control, Power Good, Soft Start
Output Phases: 3
Duty Cycle (Max): 100%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 3
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| IR3094MPBF |
|
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 48MLPQ
Packaging: Bag
Package / Case: 48-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 8V ~ 16V
Supplier Device Package: 48-MLPQ (7x7)
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control, Power Good, Soft Start
Output Phases: 3
Duty Cycle (Max): 100%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 3
Description: IC REG CTRLR BUCK 48MLPQ
Packaging: Bag
Package / Case: 48-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 8V ~ 16V
Supplier Device Package: 48-MLPQ (7x7)
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control, Power Good, Soft Start
Output Phases: 3
Duty Cycle (Max): 100%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 3
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| IRFB3077PBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
на замовлення 471 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 215.41 грн |
| 10+ | 192.62 грн |
| 100+ | 161.73 грн |
| ADM6996LX-AA-T-1 |
|
Виробник: Infineon Technologies
Description: IC SW TX/FX CTRLR/PHY/MEM 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: Parallel
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 2.8V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Description: IC SW TX/FX CTRLR/PHY/MEM 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: Parallel
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 2.8V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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| BCR401RE6327HTSA1 |
|
Виробник: Infineon Technologies
Description: IC CURRENT SOURCE SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 18V
Current - Output: 60mA
Supplier Device Package: PG-SOT-143R-3D
Part Status: Not For New Designs
Description: IC CURRENT SOURCE SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 18V
Current - Output: 60mA
Supplier Device Package: PG-SOT-143R-3D
Part Status: Not For New Designs
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.92 грн |
| 6000+ | 9.28 грн |
| 9000+ | 9.14 грн |
| 15000+ | 8.43 грн |
| 21000+ | 8.35 грн |
| BCR402RE6327HTSA1 |
|
Виробник: Infineon Technologies
Description: IC LED DRVR LIN 60MA SOT143R-4
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT-143R-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: IC LED DRVR LIN 60MA SOT143R-4
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT-143R-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.92 грн |
| 6000+ | 9.28 грн |
| 9000+ | 9.14 грн |
| 15000+ | 8.43 грн |
| BCR402UE6327HTSA1 |
|
Виробник: Infineon Technologies
Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.33 грн |
| 6000+ | 8.72 грн |
| 9000+ | 8.59 грн |
| 15000+ | 7.92 грн |
| 21000+ | 7.84 грн |
| BCR405UE6327HTSA1 |
|
Виробник: Infineon Technologies
Description: IC LED DRIVER LINEAR 50MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 50mA
Internal Switch(s): No
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
Description: IC LED DRIVER LINEAR 50MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 50mA
Internal Switch(s): No
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.31 грн |
| 6000+ | 10.24 грн |
| BFP640FE6327 |
|
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.5V 40GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
Description: RF TRANS NPN 4.5V 40GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
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| BGA612E6327HTSA1 |
|
Виробник: Infineon Technologies
Description: IC AMP MMIC 80MA 2.8V SOT343
Description: IC AMP MMIC 80MA 2.8V SOT343
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| BGA614E6327HTSA1 |
|
Виробник: Infineon Technologies
Description: IC AMP CELLULAR 2.4GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: Cellular, GSM, PCS, CDMA, UMTS
Voltage - Supply: 3V
Gain: 17.5dB
Current - Supply: 80mA
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 2GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Description: IC AMP CELLULAR 2.4GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: Cellular, GSM, PCS, CDMA, UMTS
Voltage - Supply: 3V
Gain: 17.5dB
Current - Supply: 80mA
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 2GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
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| BGA616E6327HTSA1 |
|
Виробник: Infineon Technologies
Description: IC AMP CELL 0HZ-2.7GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.7GHz
RF Type: Cellular, GSM, PCS, CDMA, UMTS
Voltage - Supply: 4.5V
Gain: 17.5dB
Current - Supply: 80mA
Noise Figure: 2.5dB
P1dB: 18dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Obsolete
Description: IC AMP CELL 0HZ-2.7GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.7GHz
RF Type: Cellular, GSM, PCS, CDMA, UMTS
Voltage - Supply: 4.5V
Gain: 17.5dB
Current - Supply: 80mA
Noise Figure: 2.5dB
P1dB: 18dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Obsolete
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| BSC022N03SG |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
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| BSC032N03SG |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 15 V
Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 15 V
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| BSC079N03SG |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14.6A/40A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 40A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Description: MOSFET N-CH 30V 14.6A/40A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 40A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
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| IFX1117GSV |
|
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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| IPB100N06S3L-03 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V
Description: MOSFET N-CH 55V 100A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V
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| IPDH4N03LAG |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
Description: MOSFET N-CH 25V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
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| IPD5N03LAG |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO252-3-11
Description: MOSFET N-CH 25V 50A TO252-3-11
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