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IRF6610TR1PBF IRF6610TR1PBF Infineon Technologies IRF6601_SCHEM-v2.jpg Description: MOSFET N-CH 20V 15A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: DIRECTFET™ SQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 10 V
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IRF6610TRPBF IRF6610TRPBF Infineon Technologies Description: MOSFET N-CH 20V 15A DIRECTFET
товару немає в наявності
 Мінімальне замовлення: 4800 шт
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IRF6611TRPBF IRF6611TRPBF Infineon Technologies IRF6611%28TR%29PBF.pdf Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.9W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 15 V
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IRF6612TR1PBF IRF6612TR1PBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 30V 24A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 15 V
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IRF6612TRPBF IRF6612TRPBF Infineon Technologies Description: MOSFET N-CH 30V 24A DIRECTFET
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 Мінімальне замовлення: 4800 шт
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IRF6613TR1PBF IRF6613TR1PBF Infineon Technologies irf6613pbf.pdf?fileId=5546d462533600a4015355e82b9b1a0d Description: MOSFET N-CH 40V 23A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 23A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 15 V
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IRF6614TRPBF IRF6614TRPBF Infineon Technologies irf6614pbf.pdf?fileId=5546d462533600a4015355e8346c1a0f Description: MOSFET N-CH 40V 12.7A DIRECTFET
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 Мінімальне замовлення: 4800 шт
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IRF6617TR1PBF IRF6617TR1PBF Infineon Technologies irf6617pbf.pdf?fileId=5546d462533600a4015355e853f21a17 Description: MOSFET N-CH 30V 14A DIRECTFET
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IRF6619TR1PBF IRF6619TR1PBF Infineon Technologies IRF6619.pdf Description: MOSFET N-CH 20V 30A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5040 pF @ 10 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+104.40 грн
2000+95.72 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRF6619TRPBF IRF6619TRPBF Infineon Technologies IRF6619.pdf Description: MOSFET N-CH 20V 30A DIRECTFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5040 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
FET Type: N-Channel
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IRF6621TR1PBF IRF6621TR1PBF Infineon Technologies IRF6621(TR)PbF.pdf Description: MOSFET N-CH 30V 12A DIRECTFET
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IRF6623TRPBF IRF6623TRPBF Infineon Technologies irf6623pbf.pdf?fileId=5546d462533600a4015355e8aa811a2d Description: MOSFET N-CH 20V 16A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Power Dissipation (Max): 1.4W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
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 Мінімальне замовлення: 4800 шт
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IRF6626TR1PBF IRF6626TR1PBF Infineon Technologies irf6626pbf.pdf Description: MOSFET N-CH 30V 16A DIRECTFET
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IRF6626TRPBF IRF6626TRPBF Infineon Technologies IRF6601_SCHEM-v2.jpg Description: MOSFET N-CH 30V 16A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ ST
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ST
Packaging: Tape & Reel (TR)
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IRF6628TR1PBF IRF6628TR1PBF Infineon Technologies IRF6628%28TR%29PbF.pdf Description: MOSFET N-CH 25V 27A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
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IRF6628TRPBF IRF6628TRPBF Infineon Technologies IRF6628%28TR%29PbF.pdf Description: MOSFET N-CH 25V 27A DIRECTFET
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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IRF6635TR1PBF IRF6635TR1PBF Infineon Technologies irf6635pbf.pdf Description: MOSFET N-CH 30V 32A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 5970 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
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IRF6635TRPBF IRF6635TRPBF Infineon Technologies irf6635pbf.pdf Description: MOSFET N-CH 30V 32A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 5970 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
 Мінімальне замовлення: 4800 шт
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IRF6637TR1PBF IRF6637TR1PBF Infineon Technologies irf6637pbf.pdf?fileId=5546d462533600a4015355ec1fab1a45 Description: MOSFET N-CH 30V 14A DIRECTFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IRF6638TR1PBF IRF6638TR1PBF Infineon Technologies IRF6638%28TR%29PbF.pdf Description: MOSFET N-CH 30V 25A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
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IRF6644TR1PBF IRF6644TR1PBF Infineon Technologies irf6644pbf.pdf?fileId=5546d462533600a4015355ec47ac1a4f Description: MOSFET N-CH 100V 10.3A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MN
Vgs(th) (Max) @ Id: 4.8V @ 150µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
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IRF6644TRPBF IRF6644TRPBF Infineon Technologies irf6644pbf.pdf?fileId=5546d462533600a4015355ec47ac1a4f Description: MOSFET N-CH 100V 10.3A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
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 Мінімальне замовлення: 4800 шт
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IRF6645TR1PBF IRF6645TR1PBF Infineon Technologies irf6645pbf.pdf?fileId=5546d462533600a4015355ec4ff51a51 Description: MOSFET N-CH 100V 5.7A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SJ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: DIRECTFET™ SJ
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
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IRF6645TRPBF IRF6645TRPBF Infineon Technologies irf6645pbf.pdf?fileId=5546d462533600a4015355ec4ff51a51 Description: MOSFET N-CH 100V 5.7A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SJ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: DIRECTFET™ SJ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
4800+44.80 грн
Мінімальне замовлення: 4800 шт
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IRF6646TR1PBF IRF6646TR1PBF Infineon Technologies irf6646pbf.pdf?fileId=5546d462533600a4015355ec5f071a55 Description: MOSFET N-CH 80V 12A DIRECTFET
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MN
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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IRF6646TRPBF IRF6646TRPBF Infineon Technologies irf6646pbf.pdf?fileId=5546d462533600a4015355ec5f071a55 Description: MOSFET N-CH 80V 12A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MN
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MN
Packaging: Tape & Reel (TR)
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
4800+53.05 грн
Мінімальне замовлення: 4800 шт
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IRF6648TR1PBF IRF6648TR1PBF Infineon Technologies irf6648pbf.pdf?fileId=5546d462533600a4015355ec6e561a59 Description: MOSFET N-CH 60V 86A DIRECTFET MN
Package / Case: DirectFET™ Isometric MN
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MN
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6648TRPBF IRF6648TRPBF Infineon Technologies irf6648pbf.pdf?fileId=5546d462533600a4015355ec6e561a59 Description: MOSFET N-CH 60V 86A DIRECTFET MN
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 25 V
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
4800+65.56 грн
9600+62.95 грн
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF6662TR1PBF IRF6662TR1PBF Infineon Technologies irf6662pbf.pdf?fileId=5546d462533600a4015355ec7edc1a5d Description: MOSFET N-CH 100V 8.3A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6665TR1PBF IRF6665TR1PBF Infineon Technologies irf6665pbf.pdf?fileId=5546d462533600a4015355ec8dcb1a62 Description: MOSFET N-CH 100V 4.2A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SH
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DIRECTFET™ SH
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6668TR1PBF IRF6668TR1PBF Infineon Technologies irf6668pbf.pdf?fileId=5546d462533600a4015355ec96b91a64 Description: MOSFET N-CH 80V 55A DIRECTFET MZ
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6668TRPBF IRF6668TRPBF Infineon Technologies irf6668pbf.pdf?fileId=5546d462533600a4015355ec96b91a64 Description: MOSFET N-CH 80V 55A DIRECTFET MZ
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
4800+58.44 грн
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF6678TR1PBF IRF6678TR1PBF Infineon Technologies Description: MOSFET N-CH 30V 30A DIRECTFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRF6691TR1PBF IRF6691TR1PBF Infineon Technologies IRF6691%28TR%29PbF.pdf Description: MOSFET N-CH 20V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6691TRPBF IRF6691TRPBF Infineon Technologies IRF6691%28TR%29PbF.pdf Description: MOSFET N-CH 20V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRS2101STRPBF IRS2101STRPBF Infineon Technologies infineon-irs2101-datasheet-en.pdf Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 8966 шт:
термін постачання 21-31 дні (днів)
4+81.37 грн
10+56.64 грн
25+51.19 грн
100+42.45 грн
250+39.78 грн
500+38.17 грн
1000+36.76 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRS21064STRPBF IRS21064STRPBF Infineon Technologies infineon-irs2106-datasheet-en.pdf Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4679 шт:
термін постачання 21-31 дні (днів)
3+112.36 грн
10+78.87 грн
25+71.61 грн
100+59.75 грн
250+56.19 грн
500+54.04 грн
1000+52.77 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRS2108STRPBF IRS2108STRPBF Infineon Technologies IRSDS08085-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4929 шт:
термін постачання 21-31 дні (днів)
4+81.37 грн
10+56.64 грн
25+51.19 грн
100+42.45 грн
250+39.78 грн
500+38.17 грн
1000+36.76 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRS2110STRPBF IRS2110STRPBF Infineon Technologies irs2110.pdf?fileId=5546d462533600a40153567660ff27b0 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2968 шт:
термін постачання 21-31 дні (днів)
2+194.50 грн
10+139.54 грн
25+127.63 грн
100+107.56 грн
250+101.72 грн
500+99.66 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRS2113STRPBF IRS2113STRPBF Infineon Technologies irs2110.pdf?fileId=5546d462533600a40153567660ff27b0 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
2+194.50 грн
10+139.54 грн
25+127.63 грн
100+107.56 грн
250+101.72 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRS21814STRPBF IRS21814STRPBF Infineon Technologies infineon-2ed2101s06f-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3273 шт:
термін постачання 21-31 дні (днів)
2+160.41 грн
10+114.54 грн
25+104.53 грн
100+87.77 грн
250+82.86 грн
500+80.48 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRS21834STRPBF IRS21834STRPBF Infineon Technologies infineon-irs2184-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6185 шт:
термін постачання 21-31 дні (днів)
2+160.41 грн
10+114.54 грн
25+104.53 грн
100+87.77 грн
250+82.86 грн
500+80.48 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRS21844STRPBF IRS21844STRPBF Infineon Technologies infineon-irs2186-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2175 шт:
термін постачання 21-31 дні (днів)
2+160.41 грн
10+114.54 грн
25+104.53 грн
100+87.77 грн
250+82.86 грн
500+80.48 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRS2453DSTRPBF IRS2453DSTRPBF Infineon Technologies irs2453d.pdf?fileId=5546d462533600a40153567ac42f2814 Description: IC GATE DRVR FULL-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4289 шт:
термін постачання 21-31 дні (днів)
3+115.46 грн
10+81.49 грн
25+74.05 грн
100+61.86 грн
250+58.21 грн
500+56.01 грн
1000+54.83 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF6610TRPBF IRF6610TRPBF Infineon Technologies Description: MOSFET N-CH 20V 15A DIRECTFET
товару немає в наявності
В кошику  од. на суму  грн.
IRF6611TRPBF IRF6611TRPBF Infineon Technologies IRF6611%28TR%29PBF.pdf Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.9W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6612TRPBF IRF6612TRPBF Infineon Technologies Description: MOSFET N-CH 30V 24A DIRECTFET
товару немає в наявності
В кошику  од. на суму  грн.
IRF6613TR1PBF IRF6613TR1PBF Infineon Technologies irf6613pbf.pdf?fileId=5546d462533600a4015355e82b9b1a0d Description: MOSFET N-CH 40V 23A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 23A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6614TRPBF IRF6614TRPBF Infineon Technologies irf6614pbf.pdf?fileId=5546d462533600a4015355e8346c1a0f Description: MOSFET N-CH 40V 12.7A DIRECTFET
товару немає в наявності
В кошику  од. на суму  грн.
IRF6621TR1PBF IRF6621TR1PBF Infineon Technologies IRF6621(TR)PbF.pdf Description: MOSFET N-CH 30V 12A DIRECTFET
товару немає в наявності
В кошику  од. на суму  грн.
IRF6623TRPBF IRF6623TRPBF Infineon Technologies irf6623pbf.pdf?fileId=5546d462533600a4015355e8aa811a2d Description: MOSFET N-CH 20V 16A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Power Dissipation (Max): 1.4W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
на замовлення 2802 шт:
термін постачання 21-31 дні (днів)
2+219.30 грн
10+136.56 грн
100+94.34 грн
500+71.61 грн
1000+67.10 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF6635TRPBF IRF6635TRPBF Infineon Technologies irf6635pbf.pdf Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5970 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6644TRPBF IRF6644TRPBF Infineon Technologies irf6644pbf.pdf?fileId=5546d462533600a4015355ec47ac1a4f Description: MOSFET N-CH 100V 10.3A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
на замовлення 5279 шт:
термін постачання 21-31 дні (днів)
2+255.72 грн
10+160.96 грн
100+112.30 грн
500+85.88 грн
1000+85.65 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF6645TR1PBF IRF6645TR1PBF Infineon Technologies irf6645pbf.pdf?fileId=5546d462533600a4015355ec4ff51a51 Description: MOSFET N-CH 100V 5.7A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ SJ
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SJ
Packaging: Cut Tape (CT)
товару немає в наявності
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IRF6645TRPBF IRF6645TRPBF Infineon Technologies irf6645pbf.pdf?fileId=5546d462533600a4015355ec4ff51a51 Description: MOSFET N-CH 100V 5.7A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ SJ
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SJ
Packaging: Cut Tape (CT)
на замовлення 11489 шт:
термін постачання 21-31 дні (днів)
2+165.06 грн
10+101.86 грн
100+69.25 грн
500+51.91 грн
1000+47.70 грн
2000+46.94 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF6646TR1PBF IRF6646TR1PBF Infineon Technologies irf6646pbf.pdf?fileId=5546d462533600a4015355ec5f071a55 Description: MOSFET N-CH 80V 12A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MN
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IRF6646TRPBF IRF6646TRPBF Infineon Technologies irf6646pbf.pdf?fileId=5546d462533600a4015355ec5f071a55 Description: MOSFET N-CH 80V 12A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
на замовлення 4840 шт:
термін постачання 21-31 дні (днів)
2+180.55 грн
10+112.30 грн
100+77.13 грн
500+58.68 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF6648TRPBF IRF6648TRPBF Infineon Technologies irf6648pbf.pdf?fileId=5546d462533600a4015355ec6e561a59 Description: MOSFET N-CH 60V 86A DIRECTFET MN
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 25 V
на замовлення 15727 шт:
термін постачання 21-31 дні (днів)
2+226.27 грн
10+141.41 грн
100+97.92 грн
500+74.46 грн
1000+72.31 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF6668TR1PBF IRF6668TR1PBF Infineon Technologies irf6668pbf.pdf?fileId=5546d462533600a4015355ec96b91a64 Description: MOSFET N-CH 80V 55A DIRECTFET MZ
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Cut Tape (CT)
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В кошику  од. на суму  грн.
IRF6668TRPBF IRF6668TRPBF Infineon Technologies irf6668pbf.pdf?fileId=5546d462533600a4015355ec96b91a64 Description: MOSFET N-CH 80V 55A DIRECTFET MZ
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Cut Tape (CT)
на замовлення 14138 шт:
термін постачання 21-31 дні (днів)
2+159.63 грн
10+108.13 грн
100+81.91 грн
500+61.95 грн
1000+55.79 грн
2000+53.12 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF6610TR1PBF IRF6601_SCHEM-v2.jpg
IRF6610TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 15A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: DIRECTFET™ SQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6610TRPBF
IRF6610TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 15A DIRECTFET
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF6611TRPBF IRF6611%28TR%29PBF.pdf
IRF6611TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.9W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 15 V
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В кошику  од. на суму  грн.
IRF6612TR1PBF IR_PartNumberingSystem.pdf
IRF6612TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 24A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6612TRPBF
IRF6612TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 24A DIRECTFET
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF6613TR1PBF irf6613pbf.pdf?fileId=5546d462533600a4015355e82b9b1a0d
IRF6613TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 23A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 23A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6614TRPBF irf6614pbf.pdf?fileId=5546d462533600a4015355e8346c1a0f
IRF6614TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 12.7A DIRECTFET
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF6617TR1PBF irf6617pbf.pdf?fileId=5546d462533600a4015355e853f21a17
IRF6617TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A DIRECTFET
товару немає в наявності
В кошику  од. на суму  грн.
IRF6619TR1PBF IRF6619.pdf
IRF6619TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 30A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5040 pF @ 10 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+104.40 грн
2000+95.72 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRF6619TRPBF IRF6619.pdf
IRF6619TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 30A DIRECTFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5040 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
FET Type: N-Channel
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IRF6621TR1PBF IRF6621(TR)PbF.pdf
IRF6621TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A DIRECTFET
товару немає в наявності
В кошику  од. на суму  грн.
IRF6623TRPBF irf6623pbf.pdf?fileId=5546d462533600a4015355e8aa811a2d
IRF6623TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 16A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Power Dissipation (Max): 1.4W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF6626TR1PBF irf6626pbf.pdf
IRF6626TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 16A DIRECTFET
товару немає в наявності
В кошику  од. на суму  грн.
IRF6626TRPBF IRF6601_SCHEM-v2.jpg
IRF6626TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 16A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ ST
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ST
Packaging: Tape & Reel (TR)
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IRF6628TR1PBF IRF6628%28TR%29PbF.pdf
IRF6628TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 27A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
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IRF6628TRPBF IRF6628%28TR%29PbF.pdf
IRF6628TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 27A DIRECTFET
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6635TR1PBF irf6635pbf.pdf
IRF6635TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 5970 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IRF6635TRPBF irf6635pbf.pdf
IRF6635TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 5970 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF6637TR1PBF irf6637pbf.pdf?fileId=5546d462533600a4015355ec1fab1a45
IRF6637TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A DIRECTFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRF6638TR1PBF IRF6638%28TR%29PbF.pdf
IRF6638TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
товару немає в наявності
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IRF6644TR1PBF irf6644pbf.pdf?fileId=5546d462533600a4015355ec47ac1a4f
IRF6644TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10.3A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MN
Vgs(th) (Max) @ Id: 4.8V @ 150µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
товару немає в наявності
В кошику  од. на суму  грн.
IRF6644TRPBF irf6644pbf.pdf?fileId=5546d462533600a4015355ec47ac1a4f
IRF6644TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10.3A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF6645TR1PBF irf6645pbf.pdf?fileId=5546d462533600a4015355ec4ff51a51
IRF6645TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5.7A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SJ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: DIRECTFET™ SJ
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6645TRPBF irf6645pbf.pdf?fileId=5546d462533600a4015355ec4ff51a51
IRF6645TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5.7A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SJ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: DIRECTFET™ SJ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4800+44.80 грн
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF6646TR1PBF irf6646pbf.pdf?fileId=5546d462533600a4015355ec5f071a55
IRF6646TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12A DIRECTFET
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MN
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6646TRPBF irf6646pbf.pdf?fileId=5546d462533600a4015355ec5f071a55
IRF6646TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MN
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MN
Packaging: Tape & Reel (TR)
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4800+53.05 грн
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF6648TR1PBF irf6648pbf.pdf?fileId=5546d462533600a4015355ec6e561a59
IRF6648TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 86A DIRECTFET MN
Package / Case: DirectFET™ Isometric MN
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MN
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6648TRPBF irf6648pbf.pdf?fileId=5546d462533600a4015355ec6e561a59
IRF6648TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 86A DIRECTFET MN
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 25 V
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4800+65.56 грн
9600+62.95 грн
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF6662TR1PBF irf6662pbf.pdf?fileId=5546d462533600a4015355ec7edc1a5d
IRF6662TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.3A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6665TR1PBF irf6665pbf.pdf?fileId=5546d462533600a4015355ec8dcb1a62
IRF6665TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 4.2A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SH
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DIRECTFET™ SH
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6668TR1PBF irf6668pbf.pdf?fileId=5546d462533600a4015355ec96b91a64
IRF6668TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 55A DIRECTFET MZ
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6668TRPBF irf6668pbf.pdf?fileId=5546d462533600a4015355ec96b91a64
IRF6668TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 55A DIRECTFET MZ
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4800+58.44 грн
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF6678TR1PBF
IRF6678TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 30A DIRECTFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRF6691TR1PBF IRF6691%28TR%29PbF.pdf
IRF6691TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6691TRPBF IRF6691%28TR%29PbF.pdf
IRF6691TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRS2101STRPBF infineon-irs2101-datasheet-en.pdf
IRS2101STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 8966 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+81.37 грн
10+56.64 грн
25+51.19 грн
100+42.45 грн
250+39.78 грн
500+38.17 грн
1000+36.76 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRS21064STRPBF infineon-irs2106-datasheet-en.pdf
IRS21064STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4679 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+112.36 грн
10+78.87 грн
25+71.61 грн
100+59.75 грн
250+56.19 грн
500+54.04 грн
1000+52.77 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRS2108STRPBF IRSDS08085-1.pdf?t.download=true&u=5oefqw
IRS2108STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4929 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+81.37 грн
10+56.64 грн
25+51.19 грн
100+42.45 грн
250+39.78 грн
500+38.17 грн
1000+36.76 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRS2110STRPBF irs2110.pdf?fileId=5546d462533600a40153567660ff27b0
IRS2110STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2968 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+194.50 грн
10+139.54 грн
25+127.63 грн
100+107.56 грн
250+101.72 грн
500+99.66 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRS2113STRPBF irs2110.pdf?fileId=5546d462533600a40153567660ff27b0
IRS2113STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+194.50 грн
10+139.54 грн
25+127.63 грн
100+107.56 грн
250+101.72 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRS21814STRPBF infineon-2ed2101s06f-datasheet-en.pdf
IRS21814STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3273 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+160.41 грн
10+114.54 грн
25+104.53 грн
100+87.77 грн
250+82.86 грн
500+80.48 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRS21834STRPBF infineon-irs2184-datasheet-en.pdf
IRS21834STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6185 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+160.41 грн
10+114.54 грн
25+104.53 грн
100+87.77 грн
250+82.86 грн
500+80.48 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRS21844STRPBF infineon-irs2186-datasheet-en.pdf
IRS21844STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2175 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+160.41 грн
10+114.54 грн
25+104.53 грн
100+87.77 грн
250+82.86 грн
500+80.48 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRS2453DSTRPBF irs2453d.pdf?fileId=5546d462533600a40153567ac42f2814
IRS2453DSTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR FULL-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4289 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+115.46 грн
10+81.49 грн
25+74.05 грн
100+61.86 грн
250+58.21 грн
500+56.01 грн
1000+54.83 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF6610TRPBF
IRF6610TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 15A DIRECTFET
товару немає в наявності
В кошику  од. на суму  грн.
IRF6611TRPBF IRF6611%28TR%29PBF.pdf
IRF6611TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.9W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6612TRPBF
IRF6612TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 24A DIRECTFET
товару немає в наявності
В кошику  од. на суму  грн.
IRF6613TR1PBF irf6613pbf.pdf?fileId=5546d462533600a4015355e82b9b1a0d
IRF6613TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 23A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 23A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6614TRPBF irf6614pbf.pdf?fileId=5546d462533600a4015355e8346c1a0f
IRF6614TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 12.7A DIRECTFET
товару немає в наявності
В кошику  од. на суму  грн.
IRF6621TR1PBF IRF6621(TR)PbF.pdf
IRF6621TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A DIRECTFET
товару немає в наявності
В кошику  од. на суму  грн.
IRF6623TRPBF irf6623pbf.pdf?fileId=5546d462533600a4015355e8aa811a2d
IRF6623TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 16A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Power Dissipation (Max): 1.4W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
на замовлення 2802 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+219.30 грн
10+136.56 грн
100+94.34 грн
500+71.61 грн
1000+67.10 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF6635TRPBF irf6635pbf.pdf
IRF6635TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5970 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6644TRPBF irf6644pbf.pdf?fileId=5546d462533600a4015355ec47ac1a4f
IRF6644TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10.3A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
на замовлення 5279 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+255.72 грн
10+160.96 грн
100+112.30 грн
500+85.88 грн
1000+85.65 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF6645TR1PBF irf6645pbf.pdf?fileId=5546d462533600a4015355ec4ff51a51
IRF6645TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5.7A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ SJ
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SJ
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IRF6645TRPBF irf6645pbf.pdf?fileId=5546d462533600a4015355ec4ff51a51
IRF6645TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5.7A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ SJ
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SJ
Packaging: Cut Tape (CT)
на замовлення 11489 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+165.06 грн
10+101.86 грн
100+69.25 грн
500+51.91 грн
1000+47.70 грн
2000+46.94 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF6646TR1PBF irf6646pbf.pdf?fileId=5546d462533600a4015355ec5f071a55
IRF6646TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MN
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IRF6646TRPBF irf6646pbf.pdf?fileId=5546d462533600a4015355ec5f071a55
IRF6646TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
на замовлення 4840 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+180.55 грн
10+112.30 грн
100+77.13 грн
500+58.68 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF6648TRPBF irf6648pbf.pdf?fileId=5546d462533600a4015355ec6e561a59
IRF6648TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 86A DIRECTFET MN
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 25 V
на замовлення 15727 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+226.27 грн
10+141.41 грн
100+97.92 грн
500+74.46 грн
1000+72.31 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF6668TR1PBF irf6668pbf.pdf?fileId=5546d462533600a4015355ec96b91a64
IRF6668TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 55A DIRECTFET MZ
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IRF6668TRPBF irf6668pbf.pdf?fileId=5546d462533600a4015355ec96b91a64
IRF6668TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 55A DIRECTFET MZ
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Cut Tape (CT)
на замовлення 14138 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+159.63 грн
10+108.13 грн
100+81.91 грн
500+61.95 грн
1000+55.79 грн
2000+53.12 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
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