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IR2181STRPBF IR2181STRPBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 23876 шт:
термін постачання 21-31 дні (днів)
2+170.48 грн
10+122.08 грн
25+111.51 грн
100+93.73 грн
250+88.54 грн
500+86.24 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2183STRPBF IR2183STRPBF Infineon Technologies infineon-ir2183-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 15053 шт:
термін постачання 21-31 дні (днів)
2+170.48 грн
10+122.08 грн
25+111.51 грн
100+93.73 грн
250+88.54 грн
500+86.24 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2112STRPBF IR2112STRPBF Infineon Technologies infineon-ir2112-ds-en.pdf Description: IC GATE DRVR HI/LOW SIDE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1978 шт:
термін постачання 21-31 дні (днів)
2+210.77 грн
10+151.85 грн
25+139.09 грн
100+117.37 грн
250+111.09 грн
500+109.23 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR21834STRPBF IR21834STRPBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4832 шт:
термін постачання 21-31 дні (днів)
2+187.53 грн
10+134.54 грн
25+123.06 грн
100+103.62 грн
250+97.96 грн
500+95.83 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR21271STRPBF IR21271STRPBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 15831 шт:
термін постачання 21-31 дні (днів)
2+187.53 грн
10+134.54 грн
25+123.03 грн
100+103.61 грн
250+97.95 грн
500+95.82 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2113STRPBF IR2113STRPBF Infineon Technologies IR2113SPBF.pdf Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6124 шт:
термін постачання 21-31 дні (днів)
2+234.02 грн
10+169.09 грн
25+155.06 грн
100+131.07 грн
250+124.18 грн
500+122.65 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2175STRPBF IR2175STRPBF Infineon Technologies IRSDS17958-1.pdf?t.download=true&u=5oefqw Description: IC CURRENT SENSE 0.5% 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 9.5V ~ 20V
Current - Output: 20mA
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 5864 шт:
термін постачання 21-31 дні (днів)
2+237.12 грн
10+171.63 грн
25+157.39 грн
100+132.97 грн
250+125.95 грн
500+121.71 грн
1000+116.29 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2132STRPBF IR2132STRPBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
2+278.97 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2233JTRPBF IR2233JTRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 90ns, 40ns
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
High Side Voltage - Max (Bootstrap): 1200 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Packaging: Cut Tape (CT)
на замовлення 486 шт:
термін постачання 21-31 дні (днів)
1+772.58 грн
10+582.34 грн
25+541.99 грн
100+466.97 грн
250+462.07 грн
В кошику  од. на суму  грн.
IRF6616 IRF6616 Infineon Technologies IRF6616.pdf Description: MOSFET N-CH 30V 19A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 3765 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 106A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF7416TRPBF IRF7416TRPBF Infineon Technologies infineon-irf7416-datasheet-en.pdf Description: MOSFET P-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 7650 шт:
термін постачання 21-31 дні (днів)
4000+24.89 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IRF7832ZTR IRF7832ZTR Infineon Technologies IRF7832Z.pdf Description: MOSFET N-CH 30V 21A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IR2101SPBF IR2101SPBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1513 шт:
термін постачання 21-31 дні (днів)
2+162.73 грн
10+116.56 грн
95+95.58 грн
190+85.75 грн
285+83.77 грн
570+80.87 грн
1045+77.46 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2103SPBF IR2103SPBF Infineon Technologies ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR2104SPBF IR2104SPBF Infineon Technologies ir2104.pdf?fileId=5546d462533600a4015355c7c1c31671 description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 6166 шт:
термін постачання 21-31 дні (днів)
2+241.00 грн
10+174.54 грн
95+144.77 грн
190+130.26 грн
285+127.46 грн
570+123.35 грн
1045+118.38 грн
2565+114.84 грн
5035+112.71 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2106SPBF IR2106SPBF Infineon Technologies ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 756 шт:
термін постачання 21-31 дні (днів)
2+162.73 грн
10+116.56 грн
95+95.58 грн
190+85.75 грн
285+83.77 грн
570+80.87 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2108SPBF IR2108SPBF Infineon Technologies infineon-ir2108-ds-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 1129 шт:
термін постачання 21-31 дні (днів)
2+179.00 грн
10+128.12 грн
95+105.39 грн
190+94.61 грн
285+92.46 грн
570+89.31 грн
1045+85.59 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2109SPBF IR2109SPBF Infineon Technologies ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
2+158.08 грн
10+113.13 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2110SPBF IR2110SPBF Infineon Technologies IR2113SPBF.pdf description Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1632 шт:
термін постачання 21-31 дні (днів)
1+412.25 грн
10+304.23 грн
45+269.03 грн
135+235.77 грн
270+227.60 грн
540+220.86 грн
1035+212.10 грн
В кошику  од. на суму  грн.
IR2111SPBF IR2111SPBF Infineon Technologies ir2111.pdf?fileId=5546d462533600a4015355c810e51682 description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 8.3V, 12.6V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 2122 шт:
термін постачання 21-31 дні (днів)
2+193.73 грн
10+138.50 грн
95+113.64 грн
190+101.97 грн
285+99.63 грн
570+96.20 грн
1045+92.17 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2112SPBF IR2112SPBF Infineon Technologies infineon-ir2112-ds-en.pdf description Description: IC GATE DRVR HI/LOW SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1728 шт:
термін постачання 21-31 дні (днів)
2+277.42 грн
10+202.00 грн
45+177.20 грн
135+154.55 грн
270+148.79 грн
540+144.06 грн
1035+138.07 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2113SPBF IR2113SPBF Infineon Technologies IR2113SPBF.pdf description Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 3886 шт:
термін постачання 21-31 дні (днів)
1+442.47 грн
10+326.84 грн
45+289.36 грн
135+253.80 грн
270+245.11 грн
540+237.95 грн
1035+228.58 грн
2520+222.55 грн
В кошику  од. на суму  грн.
IR2117SPBF IR2117SPBF Infineon Technologies ir2117.pdf?fileId=5546d462533600a4015355c84331168d description Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4145 шт:
термін постачання 21-31 дні (днів)
2+159.63 грн
10+113.13 грн
95+92.31 грн
190+82.71 грн
285+80.74 грн
570+77.86 грн
1045+74.52 грн
2565+72.04 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2118SPBF IR2118SPBF Infineon Technologies ir2117.pdf?fileId=5546d462533600a4015355c84331168d description Description: IC GATE DRVR HIGH-SIDE 8SOIC
DigiKey Programmable: Not Verified
Channel Type: Single
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Active
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
на замовлення 1369 шт:
термін постачання 21-31 дні (днів)
2+181.33 грн
10+129.99 грн
95+106.90 грн
190+95.98 грн
285+93.81 грн
570+90.62 грн
1045+86.85 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR21271SPBF IR21271SPBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4825 шт:
термін постачання 21-31 дні (днів)
2+224.72 грн
10+162.60 грн
95+134.62 грн
190+121.07 грн
285+118.43 грн
570+114.56 грн
1045+109.91 грн
2565+106.58 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2127SPBF IR2127SPBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 13048 шт:
термін постачання 21-31 дні (днів)
2+224.72 грн
10+162.60 грн
95+134.62 грн
190+121.07 грн
285+118.43 грн
570+114.56 грн
1045+109.91 грн
2565+106.58 грн
5035+104.58 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2132SPBF IR2132SPBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a description Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1821 шт:
термін постачання 21-31 дні (днів)
1+634.65 грн
10+473.54 грн
25+439.07 грн
100+376.54 грн
250+359.61 грн
500+349.41 грн
1000+335.42 грн
В кошику  од. на суму  грн.
IR2135SPBF IR2135SPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 90ns, 40ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
В кошику  од. на суму  грн.
IR2153SPBF IR2153SPBF Infineon Technologies IR2153_D_S_PbF_5-21-20.pdf description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 3082 шт:
термін постачання 21-31 дні (днів)
2+206.13 грн
10+148.12 грн
95+122.31 грн
190+109.92 грн
285+107.49 грн
570+103.91 грн
1045+99.65 грн
2565+96.58 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2156SPBF IR2156SPBF Infineon Technologies ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8 description Description: IC BALLAST CNTRL 44KHZ 14SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Current - Supply: 10 mA
Part Status: Discontinued at Digi-Key
Dimming: No
Supplier Device Package: 14-SOIC
Voltage - Supply: 10.5V ~ 16.5V
Operating Temperature: -25°C ~ 125°C
Type: Ballast Controller
Frequency: 36kHz ~ 44kHz
Mounting Type: Surface Mount
товару немає в наявності
В кошику  од. на суму  грн.
IR2175SPBF IR2175SPBF Infineon Technologies IRSDS17958-1.pdf?t.download=true&u=5oefqw Description: IC CURRENT SENSE 0.5% 8SOIC
Supplier Device Package: 8-SOIC
Operating Temperature: -40°C ~ 125°C
Accuracy: ±0.5%
Current - Output: 20mA
Voltage - Input: 9.5V ~ 20V
Function: Current Sense
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 1070 шт:
термін постачання 21-31 дні (днів)
1+440.15 грн
10+326.47 грн
95+275.94 грн
190+249.45 грн
285+244.68 грн
570+237.69 грн
1045+228.78 грн
В кошику  од. на суму  грн.
IR21814SPBF IR21814SPBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 1980 шт
В кошику  од. на суму  грн.
IR2181SPBF IR2181SPBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 5621 шт:
термін постачання 21-31 дні (днів)
1+347.16 грн
10+254.46 грн
95+213.34 грн
190+192.47 грн
285+188.59 грн
570+182.90 грн
1045+175.83 грн
2565+170.93 грн
В кошику  од. на суму  грн.
IR21834SPBF IR21834SPBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 1980 шт
В кошику  од. на суму  грн.
IR2183SPBF IR2183SPBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1215 шт:
термін постачання 21-31 дні (днів)
1+347.16 грн
10+254.46 грн
95+213.34 грн
190+192.47 грн
285+188.59 грн
570+182.90 грн
1045+175.83 грн
В кошику  од. на суму  грн.
IR2301SPBF IR2301SPBF Infineon Technologies ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: High-Side or Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 130ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
2+187.53 грн
10+133.87 грн
25+122.17 грн
100+102.63 грн
250+96.89 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR3088AMTRPBF IR3088AMTRPBF Infineon Technologies IR3088APbF.pdf Description: IC XPHASE W/FAULT DET 20L-MLPQ
Supplier Device Package: 20-MLPQ (4x4)
Current - Supply: 10mA
Applications: Processor
Voltage - Supply: 8.4V ~ 14V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 20-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IR4427SPBF IR4427SPBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
2+271.99 грн
10+197.97 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF1010ESTRLPBF IRF1010ESTRLPBF Infineon Technologies Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b Description: MOSFET N-CH 60V 84A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF1010NSTRLPBF IRF1010NSTRLPBF Infineon Technologies Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638 Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF1010NSTRRPBF IRF1010NSTRRPBF Infineon Technologies Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638 Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF1310NSTRLPBF IRF1310NSTRLPBF Infineon Technologies irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0 Description: MOSFET N-CH 100V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
800+66.49 грн
1600+59.35 грн
2400+56.96 грн
4000+50.94 грн
5600+49.45 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF1404STRLPBF IRF1404STRLPBF Infineon Technologies irf1404spbf.pdf?fileId=5546d462533600a4015355daf0f118b2 Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF1405STRLPBF IRF1405STRLPBF Infineon Technologies IRF1405%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 131A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF2807STRLPBF IRF2807STRLPBF Infineon Technologies irf2807spbf.pdf?fileId=5546d462533600a4015355deafc518f4 Description: MOSFET N-CH 75V 82A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
800+63.68 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF3205STRRPBF IRF3205STRRPBF Infineon Technologies irf3205spbf.pdf?fileId=5546d462533600a4015355defac9190c Description: MOSFET N-CH 55V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3205ZSTRRPBF IRF3205ZSTRRPBF Infineon Technologies irf3205zpbf.pdf?fileId=5546d462533600a4015355df030c190f Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3415STRLPBF IRF3415STRLPBF Infineon Technologies irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+58.36 грн
1600+51.97 грн
2400+49.82 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF3415STRRPBF IRF3415STRRPBF Infineon Technologies irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3704STRLPBF IRF3704STRLPBF Infineon Technologies IRF3704%28S%2CL%29PbF.pdf Description: MOSFET N-CH 20V 77A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3710STRLPBF IRF3710STRLPBF Infineon Technologies irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949 Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
на замовлення 7870 шт:
термін постачання 21-31 дні (днів)
800+90.33 грн
1600+81.04 грн
2400+78.01 грн
4000+70.10 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF3710STRRPBF IRF3710STRRPBF Infineon Technologies irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949 Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3711STRLPBF IRF3711STRLPBF Infineon Technologies irf3711pbf.pdf?fileId=5546d462533600a4015355dfbc571954 Description: MOSFET N-CH 20V 110A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3200 шт
В кошику  од. на суму  грн.
IRF3711STRRPBF IRF3711STRRPBF Infineon Technologies irf3711pbf.pdf?fileId=5546d462533600a4015355dfbc571954 Description: MOSFET N-CH 20V 110A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
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IRF3717PBF IRF3717PBF Infineon Technologies IRF3717PbF.pdf description Description: MOSFET N-CH 20V 20A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
товару немає в наявності
В кошику  од. на суму  грн.
IRF5305STRLPBF IRF5305STRLPBF Infineon Technologies irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995 description Description: MOSFET P-CH 55V 31A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 27200 шт:
термін постачання 21-31 дні (днів)
800+74.36 грн
1600+66.50 грн
2400+63.90 грн
4000+57.22 грн
5600+55.79 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF530NSTRLPBF IRF530NSTRLPBF Infineon Technologies irf530nspbf.pdf?fileId=5546d462533600a4015355e38eb4199c description Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
800+63.20 грн
1600+56.36 грн
2400+54.07 грн
4000+48.32 грн
5600+46.89 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF530NSTRRPBF IRF530NSTRRPBF Infineon Technologies irf530nspbf.pdf?fileId=5546d462533600a4015355e38eb4199c Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF540NSTRLPBF IRF540NSTRLPBF Infineon Technologies irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3 Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF540NSTRRPBF IRF540NSTRRPBF Infineon Technologies irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3 description Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IR2181STRPBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR2181STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 23876 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+170.48 грн
10+122.08 грн
25+111.51 грн
100+93.73 грн
250+88.54 грн
500+86.24 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2183STRPBF infineon-ir2183-datasheet-en.pdf
IR2183STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 15053 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+170.48 грн
10+122.08 грн
25+111.51 грн
100+93.73 грн
250+88.54 грн
500+86.24 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2112STRPBF infineon-ir2112-ds-en.pdf
IR2112STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1978 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+210.77 грн
10+151.85 грн
25+139.09 грн
100+117.37 грн
250+111.09 грн
500+109.23 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR21834STRPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR21834STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4832 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+187.53 грн
10+134.54 грн
25+123.06 грн
100+103.62 грн
250+97.96 грн
500+95.83 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR21271STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR21271STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 15831 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+187.53 грн
10+134.54 грн
25+123.03 грн
100+103.61 грн
250+97.95 грн
500+95.82 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2113STRPBF IR2113SPBF.pdf
IR2113STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6124 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+234.02 грн
10+169.09 грн
25+155.06 грн
100+131.07 грн
250+124.18 грн
500+122.65 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2175STRPBF IRSDS17958-1.pdf?t.download=true&u=5oefqw
IR2175STRPBF
Виробник: Infineon Technologies
Description: IC CURRENT SENSE 0.5% 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 9.5V ~ 20V
Current - Output: 20mA
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 5864 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+237.12 грн
10+171.63 грн
25+157.39 грн
100+132.97 грн
250+125.95 грн
500+121.71 грн
1000+116.29 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2132STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
IR2132STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+278.97 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2233JTRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2233JTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 90ns, 40ns
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
High Side Voltage - Max (Bootstrap): 1200 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Packaging: Cut Tape (CT)
на замовлення 486 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+772.58 грн
10+582.34 грн
25+541.99 грн
100+466.97 грн
250+462.07 грн
В кошику  од. на суму  грн.
IRF6616 IRF6616.pdf
IRF6616
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 19A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 3765 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 106A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF7416TRPBF infineon-irf7416-datasheet-en.pdf
IRF7416TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 7650 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4000+24.89 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IRF7832ZTR IRF7832Z.pdf
IRF7832ZTR
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IR2101SPBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2101SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1513 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+162.73 грн
10+116.56 грн
95+95.58 грн
190+85.75 грн
285+83.77 грн
570+80.87 грн
1045+77.46 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2103SPBF description ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f
IR2103SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR2104SPBF description ir2104.pdf?fileId=5546d462533600a4015355c7c1c31671
IR2104SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 6166 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+241.00 грн
10+174.54 грн
95+144.77 грн
190+130.26 грн
285+127.46 грн
570+123.35 грн
1045+118.38 грн
2565+114.84 грн
5035+112.71 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2106SPBF ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR2106SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 756 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+162.73 грн
10+116.56 грн
95+95.58 грн
190+85.75 грн
285+83.77 грн
570+80.87 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2108SPBF infineon-ir2108-ds-en.pdf
IR2108SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 1129 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+179.00 грн
10+128.12 грн
95+105.39 грн
190+94.61 грн
285+92.46 грн
570+89.31 грн
1045+85.59 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2109SPBF ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679
IR2109SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+158.08 грн
10+113.13 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2110SPBF description IR2113SPBF.pdf
IR2110SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1632 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+412.25 грн
10+304.23 грн
45+269.03 грн
135+235.77 грн
270+227.60 грн
540+220.86 грн
1035+212.10 грн
В кошику  од. на суму  грн.
IR2111SPBF description ir2111.pdf?fileId=5546d462533600a4015355c810e51682
IR2111SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 8.3V, 12.6V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 2122 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+193.73 грн
10+138.50 грн
95+113.64 грн
190+101.97 грн
285+99.63 грн
570+96.20 грн
1045+92.17 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2112SPBF description infineon-ir2112-ds-en.pdf
IR2112SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1728 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+277.42 грн
10+202.00 грн
45+177.20 грн
135+154.55 грн
270+148.79 грн
540+144.06 грн
1035+138.07 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2113SPBF description IR2113SPBF.pdf
IR2113SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 3886 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+442.47 грн
10+326.84 грн
45+289.36 грн
135+253.80 грн
270+245.11 грн
540+237.95 грн
1035+228.58 грн
2520+222.55 грн
В кошику  од. на суму  грн.
IR2117SPBF description ir2117.pdf?fileId=5546d462533600a4015355c84331168d
IR2117SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4145 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+159.63 грн
10+113.13 грн
95+92.31 грн
190+82.71 грн
285+80.74 грн
570+77.86 грн
1045+74.52 грн
2565+72.04 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2118SPBF description ir2117.pdf?fileId=5546d462533600a4015355c84331168d
IR2118SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
DigiKey Programmable: Not Verified
Channel Type: Single
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Active
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
на замовлення 1369 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+181.33 грн
10+129.99 грн
95+106.90 грн
190+95.98 грн
285+93.81 грн
570+90.62 грн
1045+86.85 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR21271SPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR21271SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4825 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+224.72 грн
10+162.60 грн
95+134.62 грн
190+121.07 грн
285+118.43 грн
570+114.56 грн
1045+109.91 грн
2565+106.58 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2127SPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR2127SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 13048 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+224.72 грн
10+162.60 грн
95+134.62 грн
190+121.07 грн
285+118.43 грн
570+114.56 грн
1045+109.91 грн
2565+106.58 грн
5035+104.58 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2132SPBF description ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
IR2132SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1821 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+634.65 грн
10+473.54 грн
25+439.07 грн
100+376.54 грн
250+359.61 грн
500+349.41 грн
1000+335.42 грн
В кошику  од. на суму  грн.
IR2135SPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2135SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 90ns, 40ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
В кошику  од. на суму  грн.
IR2153SPBF description IR2153_D_S_PbF_5-21-20.pdf
IR2153SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 3082 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+206.13 грн
10+148.12 грн
95+122.31 грн
190+109.92 грн
285+107.49 грн
570+103.91 грн
1045+99.65 грн
2565+96.58 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR2156SPBF description ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8
IR2156SPBF
Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 44KHZ 14SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Current - Supply: 10 mA
Part Status: Discontinued at Digi-Key
Dimming: No
Supplier Device Package: 14-SOIC
Voltage - Supply: 10.5V ~ 16.5V
Operating Temperature: -25°C ~ 125°C
Type: Ballast Controller
Frequency: 36kHz ~ 44kHz
Mounting Type: Surface Mount
товару немає в наявності
В кошику  од. на суму  грн.
IR2175SPBF IRSDS17958-1.pdf?t.download=true&u=5oefqw
IR2175SPBF
Виробник: Infineon Technologies
Description: IC CURRENT SENSE 0.5% 8SOIC
Supplier Device Package: 8-SOIC
Operating Temperature: -40°C ~ 125°C
Accuracy: ±0.5%
Current - Output: 20mA
Voltage - Input: 9.5V ~ 20V
Function: Current Sense
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 1070 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+440.15 грн
10+326.47 грн
95+275.94 грн
190+249.45 грн
285+244.68 грн
570+237.69 грн
1045+228.78 грн
В кошику  од. на суму  грн.
IR21814SPBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR21814SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1980 шт
В кошику  од. на суму  грн.
IR2181SPBF description ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR2181SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 5621 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+347.16 грн
10+254.46 грн
95+213.34 грн
190+192.47 грн
285+188.59 грн
570+182.90 грн
1045+175.83 грн
2565+170.93 грн
В кошику  од. на суму  грн.
IR21834SPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR21834SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1980 шт
В кошику  од. на суму  грн.
IR2183SPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR2183SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1215 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+347.16 грн
10+254.46 грн
95+213.34 грн
190+192.47 грн
285+188.59 грн
570+182.90 грн
1045+175.83 грн
В кошику  од. на суму  грн.
IR2301SPBF ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
IR2301SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: High-Side or Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 130ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+187.53 грн
10+133.87 грн
25+122.17 грн
100+102.63 грн
250+96.89 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR3088AMTRPBF IR3088APbF.pdf
IR3088AMTRPBF
Виробник: Infineon Technologies
Description: IC XPHASE W/FAULT DET 20L-MLPQ
Supplier Device Package: 20-MLPQ (4x4)
Current - Supply: 10mA
Applications: Processor
Voltage - Supply: 8.4V ~ 14V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 20-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IR4427SPBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4427SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+271.99 грн
10+197.97 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF1010ESTRLPBF Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b
IRF1010ESTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 84A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF1010NSTRLPBF Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638
IRF1010NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF1010NSTRRPBF Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638
IRF1010NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF1310NSTRLPBF irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0
IRF1310NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+66.49 грн
1600+59.35 грн
2400+56.96 грн
4000+50.94 грн
5600+49.45 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF1404STRLPBF irf1404spbf.pdf?fileId=5546d462533600a4015355daf0f118b2
IRF1404STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF1405STRLPBF IRF1405%28S%2CL%29PbF.pdf
IRF1405STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 131A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF2807STRLPBF irf2807spbf.pdf?fileId=5546d462533600a4015355deafc518f4
IRF2807STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 82A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+63.68 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF3205STRRPBF irf3205spbf.pdf?fileId=5546d462533600a4015355defac9190c
IRF3205STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3205ZSTRRPBF irf3205zpbf.pdf?fileId=5546d462533600a4015355df030c190f
IRF3205ZSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3415STRLPBF irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b
IRF3415STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+58.36 грн
1600+51.97 грн
2400+49.82 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF3415STRRPBF irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b
IRF3415STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3704STRLPBF IRF3704%28S%2CL%29PbF.pdf
IRF3704STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 77A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3710STRLPBF irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949
IRF3710STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
на замовлення 7870 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+90.33 грн
1600+81.04 грн
2400+78.01 грн
4000+70.10 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF3710STRRPBF irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949
IRF3710STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3711STRLPBF irf3711pbf.pdf?fileId=5546d462533600a4015355dfbc571954
IRF3711STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 110A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3200 шт
В кошику  од. на суму  грн.
IRF3711STRRPBF irf3711pbf.pdf?fileId=5546d462533600a4015355dfbc571954
IRF3711STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 110A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IRF3717PBF description IRF3717PbF.pdf
IRF3717PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 20A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
товару немає в наявності
В кошику  од. на суму  грн.
IRF5305STRLPBF description irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995
IRF5305STRLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 27200 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+74.36 грн
1600+66.50 грн
2400+63.90 грн
4000+57.22 грн
5600+55.79 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF530NSTRLPBF description irf530nspbf.pdf?fileId=5546d462533600a4015355e38eb4199c
IRF530NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+63.20 грн
1600+56.36 грн
2400+54.07 грн
4000+48.32 грн
5600+46.89 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF530NSTRRPBF irf530nspbf.pdf?fileId=5546d462533600a4015355e38eb4199c
IRF530NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF540NSTRLPBF irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3
IRF540NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF540NSTRRPBF description irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3
IRF540NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
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