Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149622) > Сторінка 724 з 2494

Обрати Сторінку:   [  << Попередня Сторінка ]  1 249 498 719 720 721 722 723 724 725 726 727 728 729 747 996 1245 1494 1743 1992 2241 2490 2494  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
BSM10GP120BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2C-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
ICE5QR0680AZXKLA1 ICE5QR0680AZXKLA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 74 W
на замовлення 4625 шт:
термін постачання 21-31 дні (днів)
183+128.39 грн
Мінімальне замовлення: 183
В кошику  од. на суму  грн.
CHL8328-28CRT CHL8328-28CRT Infineon Technologies IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
товару немає в наявності
В кошику  од. на суму  грн.
FZ1500R33HE3C1NPSA1 Infineon Technologies Infineon-FZ1500R33HE3-DataSheet-v03_03-EN.pdf?fileId=db3a304314dca389011527dfc61411c3 Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FZ1500R33HE3B60BPSA1 Infineon Technologies Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IM111X6Q1BAUMA1 IM111X6Q1BAUMA1 Infineon Technologies Infineon-IM111-X6Q1B-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56df4cf01fe Description: CIPOS NANO PG-IQFN-37
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: H-Bridge
Voltage - Isolation: 1500Vrms
Grade: Automotive
Current: 12 A
Voltage: 600 V
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
IM111X6Q1BAUMA1 IM111X6Q1BAUMA1 Infineon Technologies Infineon-IM111-X6Q1B-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56df4cf01fe Description: CIPOS NANO PG-IQFN-37
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: H-Bridge
Voltage - Isolation: 1500Vrms
Grade: Automotive
Current: 12 A
Voltage: 600 V
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BGAP2S30AE6327XTSA1 BGAP2S30AE6327XTSA1 Infineon Technologies Infineon-BGAP2S30A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599e5f10288 Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35dB
Current - Supply: 121mA
Noise Figure: 3.2dB
P1dB: 28.5dBm
Test Frequency: 3.6GHz
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+231.19 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
BGAP2S30AE6327XTSA1 BGAP2S30AE6327XTSA1 Infineon Technologies Infineon-BGAP2S30A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599e5f10288 Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35dB
Current - Supply: 121mA
Noise Figure: 3.2dB
P1dB: 28.5dBm
Test Frequency: 3.6GHz
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+538.52 грн
10+400.85 грн
25+364.95 грн
100+300.83 грн
250+278.61 грн
500+264.18 грн
1000+247.44 грн
В кошику  од. на суму  грн.
BGAP2D30AE6327XTSA1 Infineon Technologies Infineon-BGAP2D30A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599c7440282 Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.2dB
Current - Supply: 121mA
Noise Figure: 3.1dB
P1dB: 28.5dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+247.57 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
BGAP2D30AE6327XTSA1 Infineon Technologies Infineon-BGAP2D30A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599c7440282 Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.2dB
Current - Supply: 121mA
Noise Figure: 3.1dB
P1dB: 28.5dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+501.52 грн
10+370.52 грн
25+337.11 грн
100+278.09 грн
250+257.90 грн
500+244.88 грн
1000+229.73 грн
В кошику  од. на суму  грн.
BGAP2D20AE6327XTSA1 Infineon Technologies Infineon-BGAP2D20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599b8fe027f Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.1dB
Current - Supply: 121mA
Noise Figure: 3.4dB
P1dB: 28.9dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+247.57 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
BGAP2D20AE6327XTSA1 Infineon Technologies Infineon-BGAP2D20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599b8fe027f Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.1dB
Current - Supply: 121mA
Noise Figure: 3.4dB
P1dB: 28.9dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+501.52 грн
10+370.52 грн
25+337.11 грн
100+278.09 грн
250+257.90 грн
500+244.88 грн
1000+229.73 грн
В кошику  од. на суму  грн.
BGAP2S20AE6327XTSA1 BGAP2S20AE6327XTSA1 Infineon Technologies Infineon-BGAP2S20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599d65a0285 Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 34.8dB
Current - Supply: 121mA
Noise Figure: 3.8dB
P1dB: 28.9dBm
Test Frequency: 2.5GHz
Supplier Device Package: PG-TSNP-16-13
товару немає в наявності
В кошику  од. на суму  грн.
BGAP2S20AE6327XTSA1 BGAP2S20AE6327XTSA1 Infineon Technologies Infineon-BGAP2S20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599d65a0285 Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 34.8dB
Current - Supply: 121mA
Noise Figure: 3.8dB
P1dB: 28.9dBm
Test Frequency: 2.5GHz
Supplier Device Package: PG-TSNP-16-13
на замовлення 1960 шт:
термін постачання 21-31 дні (днів)
1+513.85 грн
10+379.94 грн
25+345.66 грн
100+285.14 грн
250+264.43 грн
500+251.09 грн
1000+235.55 грн
В кошику  од. на суму  грн.
CY7C1615KV18-333BZXC CY7C1615KV18-333BZXC Infineon Technologies Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FP15R12W2T4BOMA1 FP15R12W2T4BOMA1 Infineon Technologies Infineon-FP15R12W2T4-DS-v03_00-en_de.pdf?fileId=db3a30433ba77ced013bae67c3eb3a5e Description: IGBT MOD 1200V 30A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+2764.12 грн
В кошику  од. на суму  грн.
CY14B108L-ZS45XIT CY14B108L-ZS45XIT Infineon Technologies Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GS11FAIV23 S29GL01GS11FAIV23 Infineon Technologies S29GL-S_PbPkg.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FS10R06VE3BOMA1 FS10R06VE3BOMA1 Infineon Technologies Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933 Description: IGBT MODULE 600V 16A 50W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
18+1322.22 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
FS10R06VE3BOMA1 FS10R06VE3BOMA1 Infineon Technologies Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933 Description: IGBT MODULE 600V 16A 50W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
CY9AF142LAPMC1-G-MNE2 CY9AF142LAPMC1-G-MNE2 Infineon Technologies cy9a140nb-series-32-bit-arm-cortex-m3-fm3-microcontroller Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+727.62 грн
10+632.66 грн
25+603.26 грн
160+491.56 грн
320+469.47 грн
480+428.04 грн
960+366.70 грн
В кошику  од. на суму  грн.
IAUAN04S7N008AUMA1 IAUAN04S7N008AUMA1 Infineon Technologies Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f Description: IAUAN04S7N008AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUAN04S7N008AUMA1 IAUAN04S7N008AUMA1 Infineon Technologies Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f Description: IAUAN04S7N008AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
на замовлення 1879 шт:
термін постачання 21-31 дні (днів)
3+157.86 грн
10+126.44 грн
100+96.87 грн
500+73.76 грн
1000+72.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IAUAN04S7N007AUMA1 IAUAN04S7N007AUMA1 Infineon Technologies Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b Description: IAUAN04S7N007AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUAN04S7N007AUMA1 IAUAN04S7N007AUMA1 Infineon Technologies Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b Description: IAUAN04S7N007AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
на замовлення 364 шт:
термін постачання 21-31 дні (днів)
2+182.52 грн
10+137.76 грн
100+109.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUAN04S7N006AUMA1 IAUAN04S7N006AUMA1 Infineon Technologies Infineon-IAUAN04S7N006-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906a25b1218 Description: IAUAN04S7N006AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUAN04S7N006AUMA1 IAUAN04S7N006AUMA1 Infineon Technologies Infineon-IAUAN04S7N006-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906a25b1218 Description: IAUAN04S7N006AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
на замовлення 455 шт:
термін постачання 21-31 дні (днів)
2+211.30 грн
10+155.49 грн
100+119.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUAN04S7N005AUMA1 IAUAN04S7N005AUMA1 Infineon Technologies Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215 Description: IAUAN04S7N005AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+92.80 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUAN04S7N005AUMA1 IAUAN04S7N005AUMA1 Infineon Technologies Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215 Description: IAUAN04S7N005AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2032 шт:
термін постачання 21-31 дні (днів)
2+230.21 грн
10+170.46 грн
100+133.02 грн
500+101.99 грн
1000+98.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUAN04S7N004AUMA1 IAUAN04S7N004AUMA1 Infineon Technologies Infineon-IAUAN04S7N004-Data-Sheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190682281212 Description: IAUAN04S7N004AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+106.44 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUAN04S7N004AUMA1 IAUAN04S7N004AUMA1 Infineon Technologies Infineon-IAUAN04S7N004-Data-Sheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190682281212 Description: IAUAN04S7N004AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3177 шт:
термін постачання 21-31 дні (днів)
2+305.02 грн
10+192.47 грн
100+144.16 грн
500+117.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
KITA2GTC3975VTRBSTOBO1 KITA2GTC3975VTRBSTOBO1 Infineon Technologies Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be Description: AURIX TC397 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX TC397 5V TRB Socket
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+154942.06 грн
В кошику  од. на суму  грн.
FS100R17KE3BOSA1 FS100R17KE3BOSA1 Infineon Technologies Infineon-FS100R17KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42fe9a64e44 Description: IGBT MOD 1700V 145A 555W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IFS200B12N3E4B37BPSA1 Infineon Technologies Infineon-IFS200B12N3E4_B37-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a3329b86f6825 Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRGP4063-EPBF IRGP4063-EPBF Infineon Technologies IRSDS11858-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH 600V 96A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
товару немає в наявності
В кошику  од. на суму  грн.
BTS282ZE3230AKSA2 BTS282ZE3230AKSA2 Infineon Technologies BTS282Z_DS_13.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043405f2978014071d29660203c&ack=t Description: MOSFET N-CH 49V 80A TO220-7
Packaging: Bulk
Package / Case: TO-220-7
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO220-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
77+284.80 грн
Мінімальне замовлення: 77
В кошику  од. на суму  грн.
S25FL128LAGBHM023 S25FL128LAGBHM023 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
IR3826AMTRPBFAUMA1 IR3826AMTRPBFAUMA1 Infineon Technologies Infineon-IR3826AMTRPBF-DataSheet-v02_02-EN.pdf?fileId=5546d46266a498f50166ccf299297348 Description: IC REG BUCK ADJ 16A 22IQFN
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 16A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-22-1
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.62V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.6V
товару немає в наявності
В кошику  од. на суму  грн.
IPA60R330P6XKSA1 IPA60R330P6XKSA1 Infineon Technologies IPx60R330P6.pdf Description: MOSFET N-CH 600V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
ICE5QR2270AZXKLA1 ICE5QR2270AZXKLA1 Infineon Technologies Infineon-ICE5QRxxxxAx-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1eaab111c Description: ICE5QR2270 - QUASI RESONANT COOL
Packaging: Bulk
на замовлення 2208 шт:
термін постачання 21-31 дні (днів)
228+100.87 грн
Мінімальне замовлення: 228
В кошику  од. на суму  грн.
REF5QR0680BG40W1TOBO1 REF5QR0680BG40W1TOBO1 Infineon Technologies Description: EVAL BOARD FOR ICE5QR0680BG
Packaging: Box
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 3.1A, 200mA, 150mA
Contents: Board(s)
Regulator Topology: Buck, Resonant
Board Type: Fully Populated
Utilized IC / Part: ICE5QR0680BG
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 3 Isolated Outputs
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+7951.16 грн
В кошику  од. на суму  грн.
TLE49SRS8XUMA1 Infineon Technologies Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog, PWM, SENT
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 200Hz ~ 3kHz
Technology: Hall Effect
Resolution: 16 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 130mA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE49SRS8XUMA1 Infineon Technologies Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog, PWM, SENT
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 200Hz ~ 3kHz
Technology: Hall Effect
Resolution: 16 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 130mA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
1+477.68 грн
10+368.54 грн
25+340.91 грн
100+276.70 грн
500+259.40 грн
1000+242.11 грн
В кошику  од. на суму  грн.
CYBL10563-56LQXIT CYBL10563-56LQXIT Infineon Technologies CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SPIDERPLUSMBEVALTOBO1 Infineon Technologies Description: Eval
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Supplied Contents: Board(s)
Primary Attributes: 5V ~ 28V Supply
Embedded: No
товару немає в наявності
В кошику  од. на суму  грн.
S29GL256S10FHB020 S29GL256S10FHB020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
ISZ810P06LMATMA1 ISZ810P06LMATMA1 Infineon Technologies Infineon-ISZ810P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa001d6936ff Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
ISZ810P06LMATMA1 ISZ810P06LMATMA1 Infineon Technologies Infineon-ISZ810P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa001d6936ff Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
на замовлення 4721 шт:
термін постачання 21-31 дні (днів)
5+73.17 грн
10+57.16 грн
100+44.45 грн
500+35.35 грн
1000+28.80 грн
2000+27.11 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MB95F572KPF-G-SNE2 MB95F572KPF-G-SNE2 Infineon Technologies MB95560H_70H_80H_Series_RevA_Mar29_2016.pdf Description: IC MCU 8BIT 8KB FLASH 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 240 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB95F574KNPF-G-SNE2 MB95F574KNPF-G-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 20KB FLASH 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB95F774EPMC1-G-SNE2 MB95F774EPMC1-G-SNE2 Infineon Technologies 5047 Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 59
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB95F774EPMC1-G-SNE2 MB95F774EPMC1-G-SNE2 Infineon Technologies 5047 Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 954 шт:
термін постачання 21-31 дні (днів)
5+80.57 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MB95F334KP-G-SH-SNE2 MB95F334KP-G-SH-SNE2 Infineon Technologies MB95F332-34K_H_RevA_Apr4_2016.pdf Description: IC MCU 8BIT 20KB FLASH 32SDIP
Packaging: Bulk
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1008 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-SDIP
Number of I/O: 29
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB95F334KP-G-SH-SNE2 MB95F334KP-G-SH-SNE2 Infineon Technologies MB95F332-34K_H_RevA_Apr4_2016.pdf Description: IC MCU 8BIT 20KB FLASH 32SDIP
Packaging: Tube
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1008 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-SDIP
Number of I/O: 29
DigiKey Programmable: Not Verified
на замовлення 524 шт:
термін постачання 21-31 дні (днів)
4+83.86 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MB9BF366RPMC-G-JNE2 MB9BF366RPMC-G-JNE2 Infineon Technologies download Description: IC MCU 32BIT 544KB FLASH 120LQFP
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
45+507.02 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
TLE8201RAUMA1 TLE8201RAUMA1 Infineon Technologies TLE_8201R.pdf Description: IC MOTOR DRIVER 4.75V-5.5V 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 4.75V ~ 5.5V
Technology: DMOS
Voltage - Load: 5V ~ 40V
Supplier Device Package: PG-DSO-36-27
Motor Type - AC, DC: Brushed DC
Grade: Automotive
товару немає в наявності
В кошику  од. на суму  грн.
CY62136EV30LL-45ZSXIT CY62136EV30LL-45ZSXIT Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+196.94 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY62136EV30LL-45ZSXIT CY62136EV30LL-45ZSXIT Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+308.31 грн
10+276.78 грн
25+268.61 грн
50+246.24 грн
100+240.40 грн
250+232.73 грн
500+223.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY62136EV30LL-45ZSXIT CY62136EV30LL-45ZSXIT Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSM10GP120BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2C-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
ICE5QR0680AZXKLA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR0680AZXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 74 W
на замовлення 4625 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
183+128.39 грн
Мінімальне замовлення: 183
В кошику  од. на суму  грн.
CHL8328-28CRT IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf
CHL8328-28CRT
Виробник: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
товару немає в наявності
В кошику  од. на суму  грн.
FZ1500R33HE3C1NPSA1 Infineon-FZ1500R33HE3-DataSheet-v03_03-EN.pdf?fileId=db3a304314dca389011527dfc61411c3
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FZ1500R33HE3B60BPSA1
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IM111X6Q1BAUMA1 Infineon-IM111-X6Q1B-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56df4cf01fe
IM111X6Q1BAUMA1
Виробник: Infineon Technologies
Description: CIPOS NANO PG-IQFN-37
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: H-Bridge
Voltage - Isolation: 1500Vrms
Grade: Automotive
Current: 12 A
Voltage: 600 V
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
IM111X6Q1BAUMA1 Infineon-IM111-X6Q1B-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56df4cf01fe
IM111X6Q1BAUMA1
Виробник: Infineon Technologies
Description: CIPOS NANO PG-IQFN-37
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: H-Bridge
Voltage - Isolation: 1500Vrms
Grade: Automotive
Current: 12 A
Voltage: 600 V
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BGAP2S30AE6327XTSA1 Infineon-BGAP2S30A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599e5f10288
BGAP2S30AE6327XTSA1
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35dB
Current - Supply: 121mA
Noise Figure: 3.2dB
P1dB: 28.5dBm
Test Frequency: 3.6GHz
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+231.19 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
BGAP2S30AE6327XTSA1 Infineon-BGAP2S30A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599e5f10288
BGAP2S30AE6327XTSA1
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35dB
Current - Supply: 121mA
Noise Figure: 3.2dB
P1dB: 28.5dBm
Test Frequency: 3.6GHz
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+538.52 грн
10+400.85 грн
25+364.95 грн
100+300.83 грн
250+278.61 грн
500+264.18 грн
1000+247.44 грн
В кошику  од. на суму  грн.
BGAP2D30AE6327XTSA1 Infineon-BGAP2D30A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599c7440282
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.2dB
Current - Supply: 121mA
Noise Figure: 3.1dB
P1dB: 28.5dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+247.57 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
BGAP2D30AE6327XTSA1 Infineon-BGAP2D30A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599c7440282
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.2dB
Current - Supply: 121mA
Noise Figure: 3.1dB
P1dB: 28.5dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+501.52 грн
10+370.52 грн
25+337.11 грн
100+278.09 грн
250+257.90 грн
500+244.88 грн
1000+229.73 грн
В кошику  од. на суму  грн.
BGAP2D20AE6327XTSA1 Infineon-BGAP2D20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599b8fe027f
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.1dB
Current - Supply: 121mA
Noise Figure: 3.4dB
P1dB: 28.9dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+247.57 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
BGAP2D20AE6327XTSA1 Infineon-BGAP2D20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599b8fe027f
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.1dB
Current - Supply: 121mA
Noise Figure: 3.4dB
P1dB: 28.9dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+501.52 грн
10+370.52 грн
25+337.11 грн
100+278.09 грн
250+257.90 грн
500+244.88 грн
1000+229.73 грн
В кошику  од. на суму  грн.
BGAP2S20AE6327XTSA1 Infineon-BGAP2S20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599d65a0285
BGAP2S20AE6327XTSA1
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 34.8dB
Current - Supply: 121mA
Noise Figure: 3.8dB
P1dB: 28.9dBm
Test Frequency: 2.5GHz
Supplier Device Package: PG-TSNP-16-13
товару немає в наявності
В кошику  од. на суму  грн.
BGAP2S20AE6327XTSA1 Infineon-BGAP2S20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599d65a0285
BGAP2S20AE6327XTSA1
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 34.8dB
Current - Supply: 121mA
Noise Figure: 3.8dB
P1dB: 28.9dBm
Test Frequency: 2.5GHz
Supplier Device Package: PG-TSNP-16-13
на замовлення 1960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+513.85 грн
10+379.94 грн
25+345.66 грн
100+285.14 грн
250+264.43 грн
500+251.09 грн
1000+235.55 грн
В кошику  од. на суму  грн.
CY7C1615KV18-333BZXC Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726
CY7C1615KV18-333BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FP15R12W2T4BOMA1 Infineon-FP15R12W2T4-DS-v03_00-en_de.pdf?fileId=db3a30433ba77ced013bae67c3eb3a5e
FP15R12W2T4BOMA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 30A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2764.12 грн
В кошику  од. на суму  грн.
CY14B108L-ZS45XIT Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B108L-ZS45XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GS11FAIV23 S29GL-S_PbPkg.pdf
S29GL01GS11FAIV23
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FS10R06VE3BOMA1 Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933
FS10R06VE3BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 16A 50W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+1322.22 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
FS10R06VE3BOMA1 Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933
FS10R06VE3BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 16A 50W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
CY9AF142LAPMC1-G-MNE2 cy9a140nb-series-32-bit-arm-cortex-m3-fm3-microcontroller
CY9AF142LAPMC1-G-MNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+727.62 грн
10+632.66 грн
25+603.26 грн
160+491.56 грн
320+469.47 грн
480+428.04 грн
960+366.70 грн
В кошику  од. на суму  грн.
IAUAN04S7N008AUMA1 Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f
IAUAN04S7N008AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N008AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUAN04S7N008AUMA1 Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f
IAUAN04S7N008AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N008AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
на замовлення 1879 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+157.86 грн
10+126.44 грн
100+96.87 грн
500+73.76 грн
1000+72.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IAUAN04S7N007AUMA1 Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b
IAUAN04S7N007AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N007AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUAN04S7N007AUMA1 Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b
IAUAN04S7N007AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N007AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
на замовлення 364 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+182.52 грн
10+137.76 грн
100+109.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUAN04S7N006AUMA1 Infineon-IAUAN04S7N006-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906a25b1218
IAUAN04S7N006AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N006AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUAN04S7N006AUMA1 Infineon-IAUAN04S7N006-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906a25b1218
IAUAN04S7N006AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N006AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
на замовлення 455 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+211.30 грн
10+155.49 грн
100+119.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUAN04S7N005AUMA1 Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215
IAUAN04S7N005AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N005AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+92.80 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUAN04S7N005AUMA1 Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215
IAUAN04S7N005AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N005AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2032 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+230.21 грн
10+170.46 грн
100+133.02 грн
500+101.99 грн
1000+98.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUAN04S7N004AUMA1 Infineon-IAUAN04S7N004-Data-Sheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190682281212
IAUAN04S7N004AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N004AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+106.44 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUAN04S7N004AUMA1 Infineon-IAUAN04S7N004-Data-Sheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190682281212
IAUAN04S7N004AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N004AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3177 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+305.02 грн
10+192.47 грн
100+144.16 грн
500+117.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
KITA2GTC3975VTRBSTOBO1 Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be
KITA2GTC3975VTRBSTOBO1
Виробник: Infineon Technologies
Description: AURIX TC397 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX TC397 5V TRB Socket
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+154942.06 грн
В кошику  од. на суму  грн.
FS100R17KE3BOSA1 Infineon-FS100R17KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42fe9a64e44
FS100R17KE3BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 145A 555W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IFS200B12N3E4B37BPSA1 Infineon-IFS200B12N3E4_B37-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a3329b86f6825
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRGP4063-EPBF IRSDS11858-1.pdf?t.download=true&u=5oefqw
IRGP4063-EPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 96A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
товару немає в наявності
В кошику  од. на суму  грн.
BTS282ZE3230AKSA2 BTS282Z_DS_13.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043405f2978014071d29660203c&ack=t
BTS282ZE3230AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 49V 80A TO220-7
Packaging: Bulk
Package / Case: TO-220-7
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO220-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
77+284.80 грн
Мінімальне замовлення: 77
В кошику  од. на суму  грн.
S25FL128LAGBHM023 INFN-S-A0017271261-1.pdf
S25FL128LAGBHM023
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
IR3826AMTRPBFAUMA1 Infineon-IR3826AMTRPBF-DataSheet-v02_02-EN.pdf?fileId=5546d46266a498f50166ccf299297348
IR3826AMTRPBFAUMA1
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 16A 22IQFN
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 16A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-22-1
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.62V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.6V
товару немає в наявності
В кошику  од. на суму  грн.
IPA60R330P6XKSA1 IPx60R330P6.pdf
IPA60R330P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
ICE5QR2270AZXKLA1 Infineon-ICE5QRxxxxAx-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1eaab111c
ICE5QR2270AZXKLA1
Виробник: Infineon Technologies
Description: ICE5QR2270 - QUASI RESONANT COOL
Packaging: Bulk
на замовлення 2208 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
228+100.87 грн
Мінімальне замовлення: 228
В кошику  од. на суму  грн.
REF5QR0680BG40W1TOBO1
REF5QR0680BG40W1TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE5QR0680BG
Packaging: Box
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 3.1A, 200mA, 150mA
Contents: Board(s)
Regulator Topology: Buck, Resonant
Board Type: Fully Populated
Utilized IC / Part: ICE5QR0680BG
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 3 Isolated Outputs
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7951.16 грн
В кошику  од. на суму  грн.
TLE49SRS8XUMA1
Виробник: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog, PWM, SENT
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 200Hz ~ 3kHz
Technology: Hall Effect
Resolution: 16 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 130mA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE49SRS8XUMA1
Виробник: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog, PWM, SENT
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 200Hz ~ 3kHz
Technology: Hall Effect
Resolution: 16 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 130mA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+477.68 грн
10+368.54 грн
25+340.91 грн
100+276.70 грн
500+259.40 грн
1000+242.11 грн
В кошику  од. на суму  грн.
CYBL10563-56LQXIT CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf
CYBL10563-56LQXIT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SPIDERPLUSMBEVALTOBO1
Виробник: Infineon Technologies
Description: Eval
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Supplied Contents: Board(s)
Primary Attributes: 5V ~ 28V Supply
Embedded: No
товару немає в наявності
В кошику  од. на суму  грн.
S29GL256S10FHB020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S10FHB020
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
ISZ810P06LMATMA1 Infineon-ISZ810P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa001d6936ff
ISZ810P06LMATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
ISZ810P06LMATMA1 Infineon-ISZ810P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa001d6936ff
ISZ810P06LMATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
на замовлення 4721 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.17 грн
10+57.16 грн
100+44.45 грн
500+35.35 грн
1000+28.80 грн
2000+27.11 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MB95F572KPF-G-SNE2 MB95560H_70H_80H_Series_RevA_Mar29_2016.pdf
MB95F572KPF-G-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 240 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB95F574KNPF-G-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F574KNPF-G-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB95F774EPMC1-G-SNE2 5047
MB95F774EPMC1-G-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 59
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB95F774EPMC1-G-SNE2 5047
MB95F774EPMC1-G-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 954 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+80.57 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MB95F334KP-G-SH-SNE2 MB95F332-34K_H_RevA_Apr4_2016.pdf
MB95F334KP-G-SH-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 32SDIP
Packaging: Bulk
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1008 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-SDIP
Number of I/O: 29
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB95F334KP-G-SH-SNE2 MB95F332-34K_H_RevA_Apr4_2016.pdf
MB95F334KP-G-SH-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 32SDIP
Packaging: Tube
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1008 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-SDIP
Number of I/O: 29
DigiKey Programmable: Not Verified
на замовлення 524 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.86 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MB9BF366RPMC-G-JNE2 download
MB9BF366RPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 120LQFP
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
45+507.02 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
TLE8201RAUMA1 TLE_8201R.pdf
TLE8201RAUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 4.75V-5.5V 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 4.75V ~ 5.5V
Technology: DMOS
Voltage - Load: 5V ~ 40V
Supplier Device Package: PG-DSO-36-27
Motor Type - AC, DC: Brushed DC
Grade: Automotive
товару немає в наявності
В кошику  од. на суму  грн.
CY62136EV30LL-45ZSXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+196.94 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY62136EV30LL-45ZSXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+308.31 грн
10+276.78 грн
25+268.61 грн
50+246.24 грн
100+240.40 грн
250+232.73 грн
500+223.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY62136EV30LL-45ZSXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 249 498 719 720 721 722 723 724 725 726 727 728 729 747 996 1245 1494 1743 1992 2241 2490 2494  [ Наступна Сторінка >> ]