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CY91F522KWBPMC-GSE2 CY91F522KWBPMC-GSE2 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32BIT 320KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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CYW20829B0P4TAI100XUMA1 CYW20829B0P4TAI100XUMA1 Infineon Technologies Infineon-CYW20829B0-P4TAI100_CYW20829B0-P4EPI100_AIROC_Bluetooth_LE_module-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d5df5d7d635e4 Description: CYW20829B0P4TAI100XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 41-SMD Module
Sensitivity: -106dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.75V ~ 3.6V
Power - Output: 10dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.4
Current - Receiving: 5.6mA
Current - Transmitting: 5.2mA ~ 17.2mA
Antenna Type: PCB Trace
Utilized IC / Part: CYW20829
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, I2C, I2S, IrDA, JTAG, PCM, PWM, SPI, UART
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CYW20829B0P4TAI100XUMA1 CYW20829B0P4TAI100XUMA1 Infineon Technologies Infineon-CYW20829B0-P4TAI100_CYW20829B0-P4EPI100_AIROC_Bluetooth_LE_module-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d5df5d7d635e4 Description: CYW20829B0P4TAI100XUMA1
Packaging: Cut Tape (CT)
Package / Case: 41-SMD Module
Sensitivity: -106dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.75V ~ 3.6V
Power - Output: 10dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.4
Current - Receiving: 5.6mA
Current - Transmitting: 5.2mA ~ 17.2mA
Antenna Type: PCB Trace
Utilized IC / Part: CYW20829
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, I2C, I2S, IrDA, JTAG, PCM, PWM, SPI, UART
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CYW20721B2KUMLG CYW20721B2KUMLG Infineon Technologies Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 512kB RAM, 2MB ROM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 8DPSK, 8PSK, DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, PCM, PDM, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
1+631.94 грн
10+527.96 грн
25+500.01 грн
100+433.24 грн
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CYW20730A2KML2G CYW20730A2KML2G Infineon Technologies Infineon-CYW20730_Single_Chip_Bluetooth_Transceiver_for_Wireless_Input_Devices_Datasheet-AdditionalTechnicalInformation-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f8da6825 Description: IC RF TXRX BLE 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 60kB RAM
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V
Power - Output: 4dBm
Protocol: Bluetooth v5.1
Current - Receiving: 26.6mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 24mA
Supplier Device Package: 32-QFN (5x5)
GPIO: 14
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
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CYW20730A1KFBG Infineon Technologies Infineon-CYW20730_Single_Chip_Bluetooth_Transceiver_for_Wireless_Input_Devices_Datasheet-AdditionalTechnicalInformation-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f8da6825 Description: BLUE TOOTH DUAL MODE
Packaging: Tray
Package / Case: 64-VFBGA
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 60kB RAM
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V
Power - Output: 4dBm
Protocol: Bluetooth v5.1
Current - Receiving: 26.6mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 24mA
Supplier Device Package: 64-FBGA (7x7)
GPIO: 39
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
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CYW20734UA2KFFB3G Infineon Technologies Description: IC RF TXRX+MCU BLE 90FBGA
Packaging: Tray
Package / Case: 90-TFBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 352kB RAM, 848kB ROM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.62V ~ 3.6V
Protocol: Bluetooth v4.1
Data Rate (Max): 6Mbps
Supplier Device Package: 90-FBGA (8.5x8.5)
GPIO: 39
Modulation: 4-DQPSK, 8-DPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
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XC2764X40F80LRABKXUMA1 XC2764X40F80LRABKXUMA1 Infineon Technologies XC2764X.pdf Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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6EDM2003L06F06X1SA1 Infineon Technologies Description: IC GATE DRVR BARE DIE
Packaging: Bulk
DigiKey Programmable: Not Verified
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BTS52001EJAXUMA1 BTS52001EJAXUMA1 Infineon Technologies BTS5200-1EJA.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BTS52001EJAXUMA1 BTS52001EJAXUMA1 Infineon Technologies BTS5200-1EJA.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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AUIRFZ44NSTRL AUIRFZ44NSTRL Infineon Technologies AUIRFZ44NS%2CNL.pdf Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
213+98.42 грн
Мінімальне замовлення: 213
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CY9AF155MAPMC-G-JNE2 CY9AF155MAPMC-G-JNE2 Infineon Technologies MB9A150RA_Series.pdf Description: IC MCU 32BIT 416KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
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AUIRFP2907 AUIRFP2907 Infineon Technologies AUIRFP2907.pdf Description: MOSFET N-CH 75V 90A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSB014N04LX3GXUMA1 BSB014N04LX3GXUMA1 Infineon Technologies BSB014N04LX3_G_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a02c6c737a9b Description: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V
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BSB014N04LX3GXUMA1 BSB014N04LX3GXUMA1 Infineon Technologies BSB014N04LX3_G_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a02c6c737a9b Description: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V
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FP10R12W1T4PBPSA1 FP10R12W1T4PBPSA1 Infineon Technologies Infineon-FP10R12W1T4P-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfbf693b47207 Description: IGBT MOD 1200V 20A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
8+3015.70 грн
Мінімальне замовлення: 8
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FP10R12W1T4BOMA1 FP10R12W1T4BOMA1 Infineon Technologies Infineon-FP10R12W1T4-DS-v02_01-en_de.pdf?fileId=db3a3043163797a6011638990fd0016c Description: IGBT MOD 1200V 20A 105W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
10+2483.69 грн
Мінімальне замовлення: 10
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IRF200B211XKMA1 Infineon Technologies Infineon-IRF200B211-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015355db4d5418d4 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
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IRF200S234 IRF200S234 Infineon Technologies Infineon-IRF200S234-DS-v01_00-EN.pdf?fileId=5546d4625d5945ed015d9f75844d4339 Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V
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IRF200S234 IRF200S234 Infineon Technologies Infineon-IRF200S234-DS-v01_00-EN.pdf?fileId=5546d4625d5945ed015d9f75844d4339 Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V
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TLE7273G V50 TLE7273G V50 Infineon Technologies TLE7273.pdf Description: IC REG LINEAR 5V 180MA DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: P-DSO-14-8
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset, Watchdog
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
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FF300R17ME4PB11BPSA1 FF300R17ME4PB11BPSA1 Infineon Technologies Infineon-FF300R17ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b195ecd4b4a27 Description: IGBT MOD 1700V 600A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
на замовлення 381 шт:
термін постачання 21-31 дні (днів)
2+14489.72 грн
Мінімальне замовлення: 2
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FF450R12ME4EB11BPSA1 FF450R12ME4EB11BPSA1 Infineon Technologies Infineon-FF450R12ME4E_B11-DS-v03_00-EN.pdf?fileId=5546d4625f96303e015fa5e4483a397d Description: MOD IGBT MED PWR ECONOD-4
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
2+13166.70 грн
Мінімальне замовлення: 2
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IMW65R050M2HXKSA1 IMW65R050M2HXKSA1 Infineon Technologies Infineon-IMW65R050M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63c016352f4 Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
1+639.08 грн
30+359.87 грн
120+321.00 грн
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IMZA65R050M2HXKSA1 IMZA65R050M2HXKSA1 Infineon Technologies Infineon-IMZA65R050M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63b51c352d9 Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
на замовлення 135 шт:
термін постачання 21-31 дні (днів)
1+666.87 грн
30+376.84 грн
120+338.47 грн
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CYBLE-224110-PROG Infineon Technologies Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: CYBLE-224110-00, CYBLE-224116-01
Type: Programmer
Contents: Board(s)
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CYBLE-224110-00 CYBLE-224110-00 Infineon Technologies download Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 9.5dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 21.5mA
Current - Transmitting: 20mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
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ISZ0901NLSATMA1 ISZ0901NLSATMA1 Infineon Technologies Infineon-ISZ0901NLS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0b53df55162 Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-25
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
на замовлення 3565 шт:
термін постачання 21-31 дні (днів)
1113+20.07 грн
Мінімальне замовлення: 1113
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S79FL512SDSMFVG01 S79FL512SDSMFVG01 Infineon Technologies download Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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AUIRFP1405 AUIRFP1405 Infineon Technologies IRSDS11927-1.pdf?t.download=true&u=5oefqw Description: AUIRFP1405 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
124+169.61 грн
Мінімальне замовлення: 124
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AUIRFZ34N AUIRFZ34N Infineon Technologies IRSDS11400-1.pdf?t.download=true&u=5oefqw Description: AUIRFZ34 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
330+63.52 грн
Мінімальне замовлення: 330
В кошику  од. на суму  грн.
S99-50567 Infineon Technologies Description: INFINEON
Packaging: Bulk
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CY7C1370KVE33-167AXM CY7C1370KVE33-167AXM Infineon Technologies Infineon-CY7C1370KVE33_Military_Temperature_18-Mbit_(512K_X_36)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)_Datasheet-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2553f68cb&utm_source=cypres Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1460KVE33-167BZC CY7C1460KVE33-167BZC Infineon Technologies Infineon-CY7C1460KV33_CY7C1460KVE33_CY7C1462KVE33_36-Mbit_(1M_36_2M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecedb6c4958&utm_source=cypress&utm_medium=referral&u Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1440KV33-167AXC CY7C1440KV33-167AXC Infineon Technologies Infineon-CY7C1440KV33_CY7C1442KV33_CY7C1440KVE33_36-Mbit_(1_M_36_2_M_18)_Pipelined_Sync_SRAM_(With_ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecee95a4967&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Description: IC SRAM 36MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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IPP65R150CFDXKSA2 IPP65R150CFDXKSA2 Infineon Technologies Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063 Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
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IPP65R310CFDXKSA1 IPP65R310CFDXKSA1 Infineon Technologies IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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IPP65R150CFDXKSA1 IPP65R150CFDXKSA1 Infineon Technologies Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063 Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
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S99-50542 Infineon Technologies Description: INFINEON
Packaging: Bulk
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EVALTDA388121VOUTTOBO1 EVALTDA388121VOUTTOBO1 Infineon Technologies Description: EVALTDA388121VOUTTO
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38812
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA3881233VOUTTOBO1 EVALTDA3881233VOUTTOBO1 Infineon Technologies Description: EVAL BOARD FOR TDA38812
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38812
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+4088.54 грн
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EVALTDA388131VOUTTOBO1 EVALTDA388131VOUTTOBO1 Infineon Technologies Description: EVALTDA388131VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38813
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA388255VOUTTOBO1 EVALTDA388255VOUTTOBO1 Infineon Technologies Description: EVALTDA388255VOUTTOBO
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA388251VOUTTOBO1 EVALTDA388251VOUTTOBO1 Infineon Technologies Description: EVALTDA388251VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA3882533VOUTTOBO1 EVALTDA3882533VOUTTOBO1 Infineon Technologies Description: EVALTDA3882533VOUTTOB
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA388261VOUTTOBO1 EVALTDA388261VOUTTOBO1 Infineon Technologies Description: EVALTDA388261VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38826
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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IPB70N04S406ATMA1 IPB70N04S406ATMA1 Infineon Technologies Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+44.73 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB70N04S406ATMA1 IPB70N04S406ATMA1 Infineon Technologies Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
на замовлення 1816 шт:
термін постачання 21-31 дні (днів)
3+142.90 грн
10+87.84 грн
100+59.26 грн
500+44.12 грн
Мінімальне замовлення: 3
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IRF9393TRPBFXTMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
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IRLML6302GTRPBF IRLML6302GTRPBF Infineon Technologies irlml6302gpbf.pdf?fileId=5546d462533600a40153566883212625 Description: MOSFET P-CH 20V 780MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
на замовлення 6817 шт:
термін постачання 21-31 дні (днів)
2427+8.38 грн
Мінімальне замовлення: 2427
В кошику  од. на суму  грн.
IRGP20B120UD-EP IRGP20B120UD-EP Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 1200V 40A TO-247AD
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 4.85V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 850µJ (on), 425µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 169 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
товару немає в наявності
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IPD30N06S2L23ATMA1 IPD30N06S2L23ATMA1 Infineon Technologies IPD30N06S2L-23_green.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433bafe5d69 Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2010 шт:
термін постачання 21-31 дні (днів)
533+41.01 грн
Мінімальне замовлення: 533
В кошику  од. на суму  грн.
S6J336CHTBSE2D000 S6J336CHTBSE2D000 Infineon Technologies Infineon-S6J3360_Series_S6J3370_Series_32-bit_Arm_Cortex-R5F_TRAVEO_T1G_Microcontroller-AdditionalTechnicalInformation-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4479d6ae2 Description: TRAVEO-40NM
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 132MHz
Program Memory Size: 112KB (112K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 94
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IRF1404ZSPBF IRF1404ZSPBF Infineon Technologies IRSDS19311-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
336+62.12 грн
Мінімальне замовлення: 336
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IPD50N06S4L08ATMA1 IPD50N06S4L08ATMA1 Infineon Technologies INFNS14103-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2268 шт:
термін постачання 21-31 дні (днів)
682+30.71 грн
Мінімальне замовлення: 682
В кошику  од. на суму  грн.
IKW50N60TAFKSA1 IKW50N60TAFKSA1 Infineon Technologies IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
на замовлення 9853 шт:
термін постачання 21-31 дні (днів)
72+291.76 грн
Мінімальне замовлення: 72
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TLD1312ELXUMA1 TLD1312ELXUMA1 Infineon Technologies Infineon-TLD1312EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e37adde3528 Description: IC LED DRVR LIN PWM 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
на замовлення 3640 шт:
термін постачання 21-31 дні (днів)
489+46.36 грн
Мінімальне замовлення: 489
В кошику  од. на суму  грн.
TLD1311ELXUMA1 TLD1311ELXUMA1 Infineon Technologies Infineon-TLD1311EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e25799a3506 Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
на замовлення 156074 шт:
термін постачання 21-31 дні (днів)
442+51.68 грн
Мінімальне замовлення: 442
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TLD1326ELXUMA1 TLD1326ELXUMA1 Infineon Technologies Infineon-TLD1326EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e40d3613544 Description: IC LED DRVR LIN PWM 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
на замовлення 4321 шт:
термін постачання 21-31 дні (днів)
392+58.52 грн
Мінімальне замовлення: 392
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CY91F522KWBPMC-GSE2 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F522KWBPMC-GSE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 320KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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CYW20829B0P4TAI100XUMA1 Infineon-CYW20829B0-P4TAI100_CYW20829B0-P4EPI100_AIROC_Bluetooth_LE_module-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d5df5d7d635e4
CYW20829B0P4TAI100XUMA1
Виробник: Infineon Technologies
Description: CYW20829B0P4TAI100XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 41-SMD Module
Sensitivity: -106dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.75V ~ 3.6V
Power - Output: 10dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.4
Current - Receiving: 5.6mA
Current - Transmitting: 5.2mA ~ 17.2mA
Antenna Type: PCB Trace
Utilized IC / Part: CYW20829
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, I2C, I2S, IrDA, JTAG, PCM, PWM, SPI, UART
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CYW20829B0P4TAI100XUMA1 Infineon-CYW20829B0-P4TAI100_CYW20829B0-P4EPI100_AIROC_Bluetooth_LE_module-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d5df5d7d635e4
CYW20829B0P4TAI100XUMA1
Виробник: Infineon Technologies
Description: CYW20829B0P4TAI100XUMA1
Packaging: Cut Tape (CT)
Package / Case: 41-SMD Module
Sensitivity: -106dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.75V ~ 3.6V
Power - Output: 10dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.4
Current - Receiving: 5.6mA
Current - Transmitting: 5.2mA ~ 17.2mA
Antenna Type: PCB Trace
Utilized IC / Part: CYW20829
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, I2C, I2S, IrDA, JTAG, PCM, PWM, SPI, UART
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CYW20721B2KUMLG Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e
CYW20721B2KUMLG
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 512kB RAM, 2MB ROM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 8DPSK, 8PSK, DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, PCM, PDM, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+631.94 грн
10+527.96 грн
25+500.01 грн
100+433.24 грн
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CYW20730A2KML2G Infineon-CYW20730_Single_Chip_Bluetooth_Transceiver_for_Wireless_Input_Devices_Datasheet-AdditionalTechnicalInformation-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f8da6825
CYW20730A2KML2G
Виробник: Infineon Technologies
Description: IC RF TXRX BLE 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 60kB RAM
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V
Power - Output: 4dBm
Protocol: Bluetooth v5.1
Current - Receiving: 26.6mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 24mA
Supplier Device Package: 32-QFN (5x5)
GPIO: 14
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
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CYW20730A1KFBG Infineon-CYW20730_Single_Chip_Bluetooth_Transceiver_for_Wireless_Input_Devices_Datasheet-AdditionalTechnicalInformation-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f8da6825
Виробник: Infineon Technologies
Description: BLUE TOOTH DUAL MODE
Packaging: Tray
Package / Case: 64-VFBGA
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 60kB RAM
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V
Power - Output: 4dBm
Protocol: Bluetooth v5.1
Current - Receiving: 26.6mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 24mA
Supplier Device Package: 64-FBGA (7x7)
GPIO: 39
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
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CYW20734UA2KFFB3G
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 90FBGA
Packaging: Tray
Package / Case: 90-TFBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 352kB RAM, 848kB ROM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.62V ~ 3.6V
Protocol: Bluetooth v4.1
Data Rate (Max): 6Mbps
Supplier Device Package: 90-FBGA (8.5x8.5)
GPIO: 39
Modulation: 4-DQPSK, 8-DPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
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XC2764X40F80LRABKXUMA1 XC2764X.pdf
XC2764X40F80LRABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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6EDM2003L06F06X1SA1
Виробник: Infineon Technologies
Description: IC GATE DRVR BARE DIE
Packaging: Bulk
DigiKey Programmable: Not Verified
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BTS52001EJAXUMA1 BTS5200-1EJA.pdf
BTS52001EJAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BTS52001EJAXUMA1 BTS5200-1EJA.pdf
BTS52001EJAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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AUIRFZ44NSTRL AUIRFZ44NS%2CNL.pdf
AUIRFZ44NSTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
213+98.42 грн
Мінімальне замовлення: 213
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CY9AF155MAPMC-G-JNE2 MB9A150RA_Series.pdf
CY9AF155MAPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
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AUIRFP2907 AUIRFP2907.pdf
AUIRFP2907
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 90A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSB014N04LX3GXUMA1 BSB014N04LX3_G_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a02c6c737a9b
BSB014N04LX3GXUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V
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BSB014N04LX3GXUMA1 BSB014N04LX3_G_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a02c6c737a9b
BSB014N04LX3GXUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V
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FP10R12W1T4PBPSA1 Infineon-FP10R12W1T4P-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfbf693b47207
FP10R12W1T4PBPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 20A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+3015.70 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FP10R12W1T4BOMA1 Infineon-FP10R12W1T4-DS-v02_01-en_de.pdf?fileId=db3a3043163797a6011638990fd0016c
FP10R12W1T4BOMA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 20A 105W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+2483.69 грн
Мінімальне замовлення: 10
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IRF200B211XKMA1 Infineon-IRF200B211-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015355db4d5418d4
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
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IRF200S234 Infineon-IRF200S234-DS-v01_00-EN.pdf?fileId=5546d4625d5945ed015d9f75844d4339
IRF200S234
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V
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IRF200S234 Infineon-IRF200S234-DS-v01_00-EN.pdf?fileId=5546d4625d5945ed015d9f75844d4339
IRF200S234
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V
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TLE7273G V50 TLE7273.pdf
TLE7273G V50
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 180MA DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: P-DSO-14-8
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset, Watchdog
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
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FF300R17ME4PB11BPSA1 Infineon-FF300R17ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b195ecd4b4a27
FF300R17ME4PB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 600A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
на замовлення 381 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+14489.72 грн
Мінімальне замовлення: 2
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FF450R12ME4EB11BPSA1 Infineon-FF450R12ME4E_B11-DS-v03_00-EN.pdf?fileId=5546d4625f96303e015fa5e4483a397d
FF450R12ME4EB11BPSA1
Виробник: Infineon Technologies
Description: MOD IGBT MED PWR ECONOD-4
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+13166.70 грн
Мінімальне замовлення: 2
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IMW65R050M2HXKSA1 Infineon-IMW65R050M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63c016352f4
IMW65R050M2HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+639.08 грн
30+359.87 грн
120+321.00 грн
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IMZA65R050M2HXKSA1 Infineon-IMZA65R050M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63b51c352d9
IMZA65R050M2HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
на замовлення 135 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+666.87 грн
30+376.84 грн
120+338.47 грн
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CYBLE-224110-PROG
Виробник: Infineon Technologies
Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: CYBLE-224110-00, CYBLE-224116-01
Type: Programmer
Contents: Board(s)
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CYBLE-224110-00 download
CYBLE-224110-00
Виробник: Infineon Technologies
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 9.5dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 21.5mA
Current - Transmitting: 20mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
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ISZ0901NLSATMA1 Infineon-ISZ0901NLS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0b53df55162
ISZ0901NLSATMA1
Виробник: Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-25
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
на замовлення 3565 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1113+20.07 грн
Мінімальне замовлення: 1113
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S79FL512SDSMFVG01 download
S79FL512SDSMFVG01
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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AUIRFP1405 IRSDS11927-1.pdf?t.download=true&u=5oefqw
AUIRFP1405
Виробник: Infineon Technologies
Description: AUIRFP1405 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
124+169.61 грн
Мінімальне замовлення: 124
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AUIRFZ34N IRSDS11400-1.pdf?t.download=true&u=5oefqw
AUIRFZ34N
Виробник: Infineon Technologies
Description: AUIRFZ34 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
330+63.52 грн
Мінімальне замовлення: 330
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S99-50567
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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CY7C1370KVE33-167AXM Infineon-CY7C1370KVE33_Military_Temperature_18-Mbit_(512K_X_36)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)_Datasheet-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2553f68cb&utm_source=cypres
CY7C1370KVE33-167AXM
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1460KVE33-167BZC Infineon-CY7C1460KV33_CY7C1460KVE33_CY7C1462KVE33_36-Mbit_(1M_36_2M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecedb6c4958&utm_source=cypress&utm_medium=referral&u
CY7C1460KVE33-167BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1440KV33-167AXC Infineon-CY7C1440KV33_CY7C1442KV33_CY7C1440KVE33_36-Mbit_(1_M_36_2_M_18)_Pipelined_Sync_SRAM_(With_ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecee95a4967&utm_source=cypress&utm_medium=referral&utm_campaign=20211
CY7C1440KV33-167AXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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IPP65R150CFDXKSA2 Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063
IPP65R150CFDXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
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IPP65R310CFDXKSA1 IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c
IPP65R310CFDXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товару немає в наявності
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IPP65R150CFDXKSA1 Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063
IPP65R150CFDXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
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S99-50542
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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EVALTDA388121VOUTTOBO1
EVALTDA388121VOUTTOBO1
Виробник: Infineon Technologies
Description: EVALTDA388121VOUTTO
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38812
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA3881233VOUTTOBO1
EVALTDA3881233VOUTTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TDA38812
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38812
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4088.54 грн
В кошику  од. на суму  грн.
EVALTDA388131VOUTTOBO1
EVALTDA388131VOUTTOBO1
Виробник: Infineon Technologies
Description: EVALTDA388131VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38813
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA388255VOUTTOBO1
EVALTDA388255VOUTTOBO1
Виробник: Infineon Technologies
Description: EVALTDA388255VOUTTOBO
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA388251VOUTTOBO1
EVALTDA388251VOUTTOBO1
Виробник: Infineon Technologies
Description: EVALTDA388251VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA3882533VOUTTOBO1
EVALTDA3882533VOUTTOBO1
Виробник: Infineon Technologies
Description: EVALTDA3882533VOUTTOB
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA388261VOUTTOBO1
EVALTDA388261VOUTTOBO1
Виробник: Infineon Technologies
Description: EVALTDA388261VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38826
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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IPB70N04S406ATMA1 Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t
IPB70N04S406ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+44.73 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB70N04S406ATMA1 Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t
IPB70N04S406ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
на замовлення 1816 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+142.90 грн
10+87.84 грн
100+59.26 грн
500+44.12 грн
Мінімальне замовлення: 3
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IRF9393TRPBFXTMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
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IRLML6302GTRPBF irlml6302gpbf.pdf?fileId=5546d462533600a40153566883212625
IRLML6302GTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 780MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
на замовлення 6817 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2427+8.38 грн
Мінімальне замовлення: 2427
В кошику  од. на суму  грн.
IRGP20B120UD-EP fundamentals-of-power-semiconductors
IRGP20B120UD-EP
Виробник: Infineon Technologies
Description: IGBT NPT 1200V 40A TO-247AD
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 4.85V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 850µJ (on), 425µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 169 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
товару немає в наявності
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IPD30N06S2L23ATMA1 IPD30N06S2L-23_green.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433bafe5d69
IPD30N06S2L23ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2010 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
533+41.01 грн
Мінімальне замовлення: 533
В кошику  од. на суму  грн.
S6J336CHTBSE2D000 Infineon-S6J3360_Series_S6J3370_Series_32-bit_Arm_Cortex-R5F_TRAVEO_T1G_Microcontroller-AdditionalTechnicalInformation-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4479d6ae2
S6J336CHTBSE2D000
Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 132MHz
Program Memory Size: 112KB (112K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 94
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IRF1404ZSPBF IRSDS19311-1.pdf?t.download=true&u=5oefqw
IRF1404ZSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
336+62.12 грн
Мінімальне замовлення: 336
В кошику  од. на суму  грн.
IPD50N06S4L08ATMA1 INFNS14103-1.pdf?t.download=true&u=5oefqw
IPD50N06S4L08ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2268 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
682+30.71 грн
Мінімальне замовлення: 682
В кошику  од. на суму  грн.
IKW50N60TAFKSA1 IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21
IKW50N60TAFKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
на замовлення 9853 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
72+291.76 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
TLD1312ELXUMA1 Infineon-TLD1312EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e37adde3528
TLD1312ELXUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN PWM 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
на замовлення 3640 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
489+46.36 грн
Мінімальне замовлення: 489
В кошику  од. на суму  грн.
TLD1311ELXUMA1 Infineon-TLD1311EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e25799a3506
TLD1311ELXUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
на замовлення 156074 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
442+51.68 грн
Мінімальне замовлення: 442
В кошику  од. на суму  грн.
TLD1326ELXUMA1 Infineon-TLD1326EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e40d3613544
TLD1326ELXUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN PWM 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
на замовлення 4321 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
392+58.52 грн
Мінімальне замовлення: 392
В кошику  од. на суму  грн.
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