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TLE4973RE35D5S0010XUMA1 TLE4973RE35D5S0010XUMA1 Infineon Technologies Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
TLE4973RE35D5S0010XUMA1 TLE4973RE35D5S0010XUMA1 Infineon Technologies Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
на замовлення 2298 шт:
термін постачання 21-31 дні (днів)
2+303.28 грн
5+261.55 грн
10+250.10 грн
25+221.90 грн
50+213.16 грн
100+205.15 грн
500+185.94 грн
1000+180.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE4973RE35D5S0001XUMA1 TLE4973RE35D5S0001XUMA1 Infineon Technologies Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6 Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
TLE4973RE35D5S0001XUMA1 TLE4973RE35D5S0001XUMA1 Infineon Technologies Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6 Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
на замовлення 1987 шт:
термін постачання 21-31 дні (днів)
2+303.28 грн
5+261.55 грн
10+250.10 грн
25+221.90 грн
50+213.16 грн
100+205.15 грн
500+185.94 грн
1000+180.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AIMBG120R030M1XTMA1 AIMBG120R030M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SICFET N-CH 1200V 70A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+606.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
AIMBG120R030M1XTMA1 AIMBG120R030M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SICFET N-CH 1200V 70A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1482 шт:
термін постачання 21-31 дні (днів)
1+1146.94 грн
10+780.22 грн
100+714.83 грн
В кошику  од. на суму  грн.
IMBG120R034M2HXTMA1 IMBG120R034M2HXTMA1 Infineon Technologies Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0 Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
товару немає в наявності
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IMBG120R034M2HXTMA1 IMBG120R034M2HXTMA1 Infineon Technologies Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0 Description: SIC DISCRETE
Packaging: Cut Tape (CT)
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
1+855.39 грн
10+617.42 грн
100+563.47 грн
500+378.09 грн
В кошику  од. на суму  грн.
IMBG120R181M2HXTMA1 IMBG120R181M2HXTMA1 Infineon Technologies infineon-imbg120r181m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 14.9A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
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IMBG120R181M2HXTMA1 IMBG120R181M2HXTMA1 Infineon Technologies infineon-imbg120r181m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 14.9A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
на замовлення 869 шт:
термін постачання 21-31 дні (днів)
1+382.03 грн
10+245.01 грн
100+175.14 грн
500+157.75 грн
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TLE5046SICAKLRHALA1 TLE5046SICAKLRHALA1 Infineon Technologies Infineon-TLE5046SIC-AK-LR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fc5c6a0420295 Description: SPEED SENS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: Current
Type: Magnetoresistive
Operating Temperature: -40°C ~ 190°C
Voltage - Supply: 5.2V ~ 20V
Must Operate: 2mT
Actuator Material: Magnet
Grade: Automotive
Frequency: 3 kHz
Qualification: AEC-Q100
товару немає в наявності
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TDB6HK95N16LOFHOSA1 TDB6HK95N16LOFHOSA1 Infineon Technologies Infineon-TXXB6XX95N16XX-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0b84bf754a33 Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
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IPU80R2K4P7AKMA1 IPU80R2K4P7AKMA1 Infineon Technologies Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185 Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 1339 шт:
термін постачання 21-31 дні (днів)
868+27.05 грн
Мінімальне замовлення: 868
В кошику  од. на суму  грн.
IRF100PW219XKSA1 IRF100PW219XKSA1 Infineon Technologies Infineon-IRF100PW219-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194d11e9f761e44 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
1+390.41 грн
В кошику  од. на суму  грн.
IGI60F270A1LAUMA1 IGI60F270A1LAUMA1 Infineon Technologies Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 270mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
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CG9059AM Infineon Technologies Description: IC MEMORY
Packaging: Bulk
DigiKey Programmable: Not Verified
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FS01MR12A8MA2BHPSA1 FS01MR12A8MA2BHPSA1 Infineon Technologies Description: FS01MR12A8MA2BHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 750V
Rds On (Max) @ Id, Vgs: 1.87mOhm @ 18V, 500A
Vgs(th) (Max) @ Id: 4.55V @ 240mA
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+158281.09 грн
В кошику  од. на суму  грн.
CY9AF004BGL-GMJK7E1 CY9AF004BGL-GMJK7E1 Infineon Technologies Description: IC MCU
Packaging: Tray
DigiKey Programmable: Not Verified
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FS300R12OE4PNOSA1 FS300R12OE4PNOSA1 Infineon Technologies Infineon-FS300R12OE4P-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015d5ff1ab4a53be Description: IGBT MOD 1200V 600A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+24983.02 грн
В кошику  од. на суму  грн.
AN983X-AH-T-21 AN983X-AH-T-21 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
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IRF7403TR IRF7403TR Infineon Technologies irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IPP033N03LF2SAKSA1 IPP033N03LF2SAKSA1 Infineon Technologies Infineon-IPP033N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cc6d352b2a Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
на замовлення 349 шт:
термін постачання 21-31 дні (днів)
3+113.10 грн
10+68.74 грн
100+45.94 грн
Мінімальне замовлення: 3
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IR3843AMTRPBF IR3843AMTRPBF Infineon Technologies ir3843am.pdf?fileId=5546d462533600a4015355d557e217ea Description: IC REG BUCK ADJ 3A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.32MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
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IPP80N08S2L07AKSA1 IPP80N08S2L07AKSA1 Infineon Technologies Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
91+238.79 грн
Мінімальне замовлення: 91
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IPB065N03LGATMA1 IPB065N03LGATMA1 Infineon Technologies IP%28B%2CP%29065N03LG.pdf Description: MOSFET N-CH 30V 50A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 333 шт:
термін постачання 21-31 дні (днів)
333+64.68 грн
Мінімальне замовлення: 333
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KT210 KT210 Infineon Technologies KT%2CKTY.pdf Description: SENSOR PTC 1KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1 kOhms
на замовлення 73800 шт:
термін постачання 21-31 дні (днів)
611+39.14 грн
Мінімальне замовлення: 611
В кошику  од. на суму  грн.
TLF35585QUS01XUMA2 TLF35585QUS01XUMA2 Infineon Technologies Infineon-TLF35585QUS01-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2200 шт:
термін постачання 21-31 дні (днів)
1+598.18 грн
10+446.71 грн
25+414.39 грн
100+355.51 грн
250+339.61 грн
500+330.02 грн
1000+316.85 грн
В кошику  од. на суму  грн.
TLF35585QUS01XUMA2 TLF35585QUS01XUMA2 Infineon Technologies Infineon-TLF35585QUS01-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d Description: OPTIREG PMIC
Packaging: Tray
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
IPTG029N13NM6ATMA1 IPTG029N13NM6ATMA1 Infineon Technologies IPTG029N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 179µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+209.17 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IPTG029N13NM6ATMA1 IPTG029N13NM6ATMA1 Infineon Technologies IPTG029N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 179µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1+509.38 грн
10+331.02 грн
100+246.54 грн
В кошику  од. на суму  грн.
PVT322PBF PVT322PBF Infineon Technologies pvt322.pdf?fileId=5546d462533600a40153568427eb2965 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
на замовлення 7833 шт:
термін постачання 21-31 дні (днів)
1+642.59 грн
10+551.18 грн
25+526.33 грн
50+477.01 грн
100+460.63 грн
250+439.83 грн
500+417.75 грн
1000+403.38 грн
В кошику  од. на суму  грн.
PVT322S-TPBF PVT322S-TPBF Infineon Technologies pvt322.pdf?fileId=5546d462533600a40153568427eb2965 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)
750+541.70 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
PVT322S-TPBF PVT322S-TPBF Infineon Technologies pvt322.pdf?fileId=5546d462533600a40153568427eb2965 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
на замовлення 2260 шт:
термін постачання 21-31 дні (днів)
1+755.69 грн
10+648.48 грн
25+619.21 грн
50+561.18 грн
100+541.92 грн
250+517.45 грн
В кошику  од. на суму  грн.
ISC044N15NM6ATMA1 ISC044N15NM6ATMA1 Infineon Technologies Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
товару немає в наявності
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ISC044N15NM6ATMA1 ISC044N15NM6ATMA1 Infineon Technologies Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
на замовлення 3640 шт:
термін постачання 21-31 дні (днів)
1+400.47 грн
10+310.44 грн
100+251.47 грн
В кошику  од. на суму  грн.
S29GL512T10TFA010 S29GL512T10TFA010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
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S29GL01GS11TFA010 S29GL01GS11TFA010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL512N10FFA010 S29GL512N10FFA010 Infineon Technologies Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8, 32M x 16
DigiKey Programmable: Verified
Qualification: AEC-Q100
товару немає в наявності
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S29GL512S11DHB023 S29GL512S11DHB023 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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IMZA65R010M2HXKSA1 IMZA65R010M2HXKSA1 Infineon Technologies Infineon-IMZA65R010M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501926b6dff840532 Description: IMZA65R010M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
1+1539.87 грн
30+939.21 грн
120+885.73 грн
В кошику  од. на суму  грн.
IGT65R035D2ATMA1 IGT65R035D2ATMA1 Infineon Technologies Description: HV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
товару немає в наявності
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IGT65R035D2ATMA1 IGT65R035D2ATMA1 Infineon Technologies Description: HV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
товару немає в наявності
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IPD35N10S3L26ATMA2 IPD35N10S3L26ATMA2 Infineon Technologies Infineon-IPD35N10S3L-26-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a9085629c594b Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2320 шт:
термін постачання 21-31 дні (днів)
3+160.02 грн
10+98.67 грн
100+67.03 грн
500+50.19 грн
1000+48.26 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NBT2000A8K0T4 KIT V1 NBT2000A8K0T4 KIT V1 Infineon Technologies Infineon-OPTIGA_Authenticate_NBT_DevKit_UserGuide-UserManual-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84d5f3884f85 Description: OPTIGA Authenticate NBT Develop
Packaging: Box
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+10897.19 грн
В кошику  од. на суму  грн.
PVN012PBF PVN012PBF Infineon Technologies pvn012.pdf?fileId=5546d462533600a401535683f185294d Description: SSR RELAY SPST-NO 2.5A 0-20V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2.5 A
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
на замовлення 1706 шт:
термін постачання 21-31 дні (днів)
1+1599.35 грн
10+1371.66 грн
25+1309.80 грн
50+1187.01 грн
100+1146.24 грн
250+1094.43 грн
500+1039.46 грн
В кошику  од. на суму  грн.
TLE42632GSXUMA1 TLE42632GSXUMA1 Infineon Technologies Infineon-TLE4263-2GS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec6d7e1c743f8 Description: IC REG LINEAR 5V 180MA 8DSO-62
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-62
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
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TLE42632GMXUMA1 TLE42632GMXUMA1 Infineon Technologies Infineon-TLE4263-2GM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec6d7d79f43f5 Description: IC REG LIN 5V 180MA PG-DSO-14-61
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
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CY7C63813-PXC CY7C63813-PXC Infineon Technologies download Description: IC USB PERIPHERAL CTRLR 18-DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 18-PDIP
DigiKey Programmable: Not Verified
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CY8C27143-24PXI CY8C27143-24PXI Infineon Technologies download description Description: IC MCU 8BIT 16KB FLASH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 8-PDIP
Number of I/O: 6
DigiKey Programmable: Not Verified
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CY3220LINBUS-RD CY3220LINBUS-RD Infineon Technologies Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1 Description: EVAL BRD FOR CY8C27143 CY8C27443
Packaging: Bulk
Function: LIN
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CY8C27143, CY8C27443
Embedded: Yes, MCU, 8-Bit
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CY3250-27XXX CY3250-27XXX Infineon Technologies Description: KIT ICE POD FOR CY8C27 DIP
Packaging: Bulk
Accessory Type: Non-QFN Emulation Kit
Utilized IC / Part: CY3215-DK, CY8C27143-24PXI, 27243-24PVXI, 27243-24SXI, 27443-24PXI, 27443-24PVXI, 27443-24SXI, 27543-24AXI, 27643-24PVXI
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IHW20N135R3FKSA1 IHW20N135R3FKSA1 Infineon Technologies IHW20T120.pdf Description: IGBT TRENCH 1350V 40A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/335ns
Switching Energy: 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
на замовлення 13692 шт:
термін постачання 21-31 дні (днів)
115+188.14 грн
Мінімальне замовлення: 115
В кошику  од. на суму  грн.
REF5QR2280BG124W1TOBO1 REF5QR2280BG124W1TOBO1 Infineon Technologies #!?fileId=8ac78c8c919c9f9d019233514f1f43d4 Description: REF5QR2280BG124W1TOBO1
Packaging: Box
Voltage - Output: 5V, 12V
Voltage - Input: 85 ~ 300 VAC
Current - Output: 1.92A, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE5QR2280BG-1
Main Purpose: AC/DC Converter
Outputs and Type: 2 Non-Isolated Outputs
Power - Output: 24W
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+9662.28 грн
В кошику  од. на суму  грн.
BAV99UE6327HTSA1 BAV99UE6327HTSA1 Infineon Technologies bav99series.pdf Description: DIODE ARRAY GP 80V 200MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
на замовлення 3360 шт:
термін постачання 21-31 дні (днів)
2620+7.96 грн
Мінімальне замовлення: 2620
В кошику  од. на суму  грн.
BAS16SH6727XTSA1 BAS16SH6727XTSA1 Infineon Technologies bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Description: DIODE ARR GP 80V 200MA SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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BGA231N7E6327XTSA2 BGA231N7E6327XTSA2 Infineon Technologies BGA231N7.pdf Description: IC AMP GPS 1.55-1.615GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 16dB
Current - Supply: 4.4mA
Noise Figure: 0.75dB
P1dB: -5dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: PG-TSLP-7-1
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BGA231N7E6327XTSA2 BGA231N7E6327XTSA2 Infineon Technologies BGA231N7.pdf Description: IC AMP GPS 1.55-1.615GHZ TSLP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 16dB
Current - Supply: 4.4mA
Noise Figure: 0.75dB
P1dB: -5dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: PG-TSLP-7-1
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CY8C4148AXQ-S445 CY8C4148AXQ-S445 Infineon Technologies Infineon-PSOC_4_PSOC_4100S_PLUS_256KB_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8193c7109 Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
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S6E2CC9J0AGB1000A S6E2CC9J0AGB1000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
на замовлення 1176 шт:
термін постачання 21-31 дні (днів)
1+984.41 грн
10+751.42 грн
25+702.27 грн
168+604.88 грн
В кошику  од. на суму  грн.
IRG4BC40UPBF IRG4BC40UPBF Infineon Technologies irg4bc40upbf.pdf?fileId=5546d462533600a4015356433c83229e description Description: IGBT 600V 40A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 34ns/110ns
Switching Energy: 320µJ (on), 350µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
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TLE4973RE35D5S0010XUMA1 Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b
TLE4973RE35D5S0010XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
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TLE4973RE35D5S0010XUMA1 Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b
TLE4973RE35D5S0010XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
на замовлення 2298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+303.28 грн
5+261.55 грн
10+250.10 грн
25+221.90 грн
50+213.16 грн
100+205.15 грн
500+185.94 грн
1000+180.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE4973RE35D5S0001XUMA1 Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6
TLE4973RE35D5S0001XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
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TLE4973RE35D5S0001XUMA1 Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6
TLE4973RE35D5S0001XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
на замовлення 1987 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+303.28 грн
5+261.55 грн
10+250.10 грн
25+221.90 грн
50+213.16 грн
100+205.15 грн
500+185.94 грн
1000+180.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AIMBG120R030M1XTMA1 448_AIMBG120R.pdf
AIMBG120R030M1XTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 70A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+606.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
AIMBG120R030M1XTMA1 448_AIMBG120R.pdf
AIMBG120R030M1XTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 70A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1482 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1146.94 грн
10+780.22 грн
100+714.83 грн
В кошику  од. на суму  грн.
IMBG120R034M2HXTMA1 Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0
IMBG120R034M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
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IMBG120R034M2HXTMA1 Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0
IMBG120R034M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+855.39 грн
10+617.42 грн
100+563.47 грн
500+378.09 грн
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IMBG120R181M2HXTMA1 infineon-imbg120r181m2h-datasheet-en.pdf
IMBG120R181M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 14.9A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
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IMBG120R181M2HXTMA1 infineon-imbg120r181m2h-datasheet-en.pdf
IMBG120R181M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 14.9A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
на замовлення 869 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+382.03 грн
10+245.01 грн
100+175.14 грн
500+157.75 грн
В кошику  од. на суму  грн.
TLE5046SICAKLRHALA1 Infineon-TLE5046SIC-AK-LR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fc5c6a0420295
TLE5046SICAKLRHALA1
Виробник: Infineon Technologies
Description: SPEED SENS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: Current
Type: Magnetoresistive
Operating Temperature: -40°C ~ 190°C
Voltage - Supply: 5.2V ~ 20V
Must Operate: 2mT
Actuator Material: Magnet
Grade: Automotive
Frequency: 3 kHz
Qualification: AEC-Q100
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TDB6HK95N16LOFHOSA1 Infineon-TXXB6XX95N16XX-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0b84bf754a33
TDB6HK95N16LOFHOSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
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IPU80R2K4P7AKMA1 Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185
IPU80R2K4P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 1339 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
868+27.05 грн
Мінімальне замовлення: 868
В кошику  од. на суму  грн.
IRF100PW219XKSA1 Infineon-IRF100PW219-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194d11e9f761e44
IRF100PW219XKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+390.41 грн
В кошику  од. на суму  грн.
IGI60F270A1LAUMA1
IGI60F270A1LAUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 270mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
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CG9059AM
Виробник: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
DigiKey Programmable: Not Verified
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FS01MR12A8MA2BHPSA1
FS01MR12A8MA2BHPSA1
Виробник: Infineon Technologies
Description: FS01MR12A8MA2BHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 750V
Rds On (Max) @ Id, Vgs: 1.87mOhm @ 18V, 500A
Vgs(th) (Max) @ Id: 4.55V @ 240mA
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+158281.09 грн
В кошику  од. на суму  грн.
CY9AF004BGL-GMJK7E1
CY9AF004BGL-GMJK7E1
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Tray
DigiKey Programmable: Not Verified
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FS300R12OE4PNOSA1 Infineon-FS300R12OE4P-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015d5ff1ab4a53be
FS300R12OE4PNOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+24983.02 грн
В кошику  од. на суму  грн.
AN983X-AH-T-21 fundamentals-of-power-semiconductors
AN983X-AH-T-21
Виробник: Infineon Technologies
Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
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IRF7403TR irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c
IRF7403TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IPP033N03LF2SAKSA1 Infineon-IPP033N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cc6d352b2a
IPP033N03LF2SAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
на замовлення 349 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+113.10 грн
10+68.74 грн
100+45.94 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IR3843AMTRPBF ir3843am.pdf?fileId=5546d462533600a4015355d557e217ea
IR3843AMTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 3A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.32MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
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IPP80N08S2L07AKSA1 Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t
IPP80N08S2L07AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
91+238.79 грн
Мінімальне замовлення: 91
В кошику  од. на суму  грн.
IPB065N03LGATMA1 IP%28B%2CP%29065N03LG.pdf
IPB065N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 333 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
333+64.68 грн
Мінімальне замовлення: 333
В кошику  од. на суму  грн.
KT210 KT%2CKTY.pdf
KT210
Виробник: Infineon Technologies
Description: SENSOR PTC 1KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1 kOhms
на замовлення 73800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
611+39.14 грн
Мінімальне замовлення: 611
В кошику  од. на суму  грн.
TLF35585QUS01XUMA2 Infineon-TLF35585QUS01-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d
TLF35585QUS01XUMA2
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+598.18 грн
10+446.71 грн
25+414.39 грн
100+355.51 грн
250+339.61 грн
500+330.02 грн
1000+316.85 грн
В кошику  од. на суму  грн.
TLF35585QUS01XUMA2 Infineon-TLF35585QUS01-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d
TLF35585QUS01XUMA2
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tray
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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IPTG029N13NM6ATMA1 IPTG029N13NM6_Rev2.0_10-16-23.pdf
IPTG029N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 179µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+209.17 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IPTG029N13NM6ATMA1 IPTG029N13NM6_Rev2.0_10-16-23.pdf
IPTG029N13NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 179µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+509.38 грн
10+331.02 грн
100+246.54 грн
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PVT322PBF pvt322.pdf?fileId=5546d462533600a40153568427eb2965
PVT322PBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
на замовлення 7833 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+642.59 грн
10+551.18 грн
25+526.33 грн
50+477.01 грн
100+460.63 грн
250+439.83 грн
500+417.75 грн
1000+403.38 грн
В кошику  од. на суму  грн.
PVT322S-TPBF pvt322.pdf?fileId=5546d462533600a40153568427eb2965
PVT322S-TPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
750+541.70 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
PVT322S-TPBF pvt322.pdf?fileId=5546d462533600a40153568427eb2965
PVT322S-TPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
на замовлення 2260 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+755.69 грн
10+648.48 грн
25+619.21 грн
50+561.18 грн
100+541.92 грн
250+517.45 грн
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ISC044N15NM6ATMA1 Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018
ISC044N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
товару немає в наявності
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ISC044N15NM6ATMA1 Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018
ISC044N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
на замовлення 3640 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+400.47 грн
10+310.44 грн
100+251.47 грн
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S29GL512T10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T10TFA010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
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S29GL01GS11TFA010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11TFA010
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL512N10FFA010
S29GL512N10FFA010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8, 32M x 16
DigiKey Programmable: Verified
Qualification: AEC-Q100
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S29GL512S11DHB023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL512S11DHB023
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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IMZA65R010M2HXKSA1 Infineon-IMZA65R010M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501926b6dff840532
IMZA65R010M2HXKSA1
Виробник: Infineon Technologies
Description: IMZA65R010M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1539.87 грн
30+939.21 грн
120+885.73 грн
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IGT65R035D2ATMA1
IGT65R035D2ATMA1
Виробник: Infineon Technologies
Description: HV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
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IGT65R035D2ATMA1
IGT65R035D2ATMA1
Виробник: Infineon Technologies
Description: HV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
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IPD35N10S3L26ATMA2 Infineon-IPD35N10S3L-26-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a9085629c594b
IPD35N10S3L26ATMA2
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+160.02 грн
10+98.67 грн
100+67.03 грн
500+50.19 грн
1000+48.26 грн
Мінімальне замовлення: 3
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NBT2000A8K0T4 KIT V1 Infineon-OPTIGA_Authenticate_NBT_DevKit_UserGuide-UserManual-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84d5f3884f85
NBT2000A8K0T4 KIT V1
Виробник: Infineon Technologies
Description: OPTIGA Authenticate NBT Develop
Packaging: Box
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10897.19 грн
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PVN012PBF pvn012.pdf?fileId=5546d462533600a401535683f185294d
PVN012PBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 2.5A 0-20V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2.5 A
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
на замовлення 1706 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1599.35 грн
10+1371.66 грн
25+1309.80 грн
50+1187.01 грн
100+1146.24 грн
250+1094.43 грн
500+1039.46 грн
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TLE42632GSXUMA1 Infineon-TLE4263-2GS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec6d7e1c743f8
TLE42632GSXUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 180MA 8DSO-62
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-62
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
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TLE42632GMXUMA1 Infineon-TLE4263-2GM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec6d7d79f43f5
TLE42632GMXUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 180MA PG-DSO-14-61
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
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CY7C63813-PXC download
CY7C63813-PXC
Виробник: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 18-DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 18-PDIP
DigiKey Programmable: Not Verified
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CY8C27143-24PXI description download
CY8C27143-24PXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 8-PDIP
Number of I/O: 6
DigiKey Programmable: Not Verified
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CY3220LINBUS-RD Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1
CY3220LINBUS-RD
Виробник: Infineon Technologies
Description: EVAL BRD FOR CY8C27143 CY8C27443
Packaging: Bulk
Function: LIN
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CY8C27143, CY8C27443
Embedded: Yes, MCU, 8-Bit
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CY3250-27XXX
CY3250-27XXX
Виробник: Infineon Technologies
Description: KIT ICE POD FOR CY8C27 DIP
Packaging: Bulk
Accessory Type: Non-QFN Emulation Kit
Utilized IC / Part: CY3215-DK, CY8C27143-24PXI, 27243-24PVXI, 27243-24SXI, 27443-24PXI, 27443-24PVXI, 27443-24SXI, 27543-24AXI, 27643-24PVXI
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IHW20N135R3FKSA1 IHW20T120.pdf
IHW20N135R3FKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 1350V 40A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/335ns
Switching Energy: 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
на замовлення 13692 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
115+188.14 грн
Мінімальне замовлення: 115
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REF5QR2280BG124W1TOBO1 #!?fileId=8ac78c8c919c9f9d019233514f1f43d4
REF5QR2280BG124W1TOBO1
Виробник: Infineon Technologies
Description: REF5QR2280BG124W1TOBO1
Packaging: Box
Voltage - Output: 5V, 12V
Voltage - Input: 85 ~ 300 VAC
Current - Output: 1.92A, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE5QR2280BG-1
Main Purpose: AC/DC Converter
Outputs and Type: 2 Non-Isolated Outputs
Power - Output: 24W
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9662.28 грн
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BAV99UE6327HTSA1 bav99series.pdf
BAV99UE6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
на замовлення 3360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2620+7.96 грн
Мінімальне замовлення: 2620
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BAS16SH6727XTSA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
BAS16SH6727XTSA1
Виробник: Infineon Technologies
Description: DIODE ARR GP 80V 200MA SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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BGA231N7E6327XTSA2 BGA231N7.pdf
BGA231N7E6327XTSA2
Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 16dB
Current - Supply: 4.4mA
Noise Figure: 0.75dB
P1dB: -5dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: PG-TSLP-7-1
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BGA231N7E6327XTSA2 BGA231N7.pdf
BGA231N7E6327XTSA2
Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 16dB
Current - Supply: 4.4mA
Noise Figure: 0.75dB
P1dB: -5dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: PG-TSLP-7-1
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CY8C4148AXQ-S445 Infineon-PSOC_4_PSOC_4100S_PLUS_256KB_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8193c7109
CY8C4148AXQ-S445
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
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S6E2CC9J0AGB1000A download
S6E2CC9J0AGB1000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
на замовлення 1176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+984.41 грн
10+751.42 грн
25+702.27 грн
168+604.88 грн
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IRG4BC40UPBF description irg4bc40upbf.pdf?fileId=5546d462533600a4015356433c83229e
IRG4BC40UPBF
Виробник: Infineon Technologies
Description: IGBT 600V 40A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 34ns/110ns
Switching Energy: 320µJ (on), 350µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
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