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CG10055AFT Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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TLE4971A050N5E0002XUMA1 Infineon Technologies Description: CURRENT SENS ATV
Packaging: Tape & Reel (TR)
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CY9BF466LQN-G-AVE2 CY9BF466LQN-G-AVE2 Infineon Technologies download Description: IC MCU 32BIT 544KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
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CY9BF466LPMC-G-JNE2 CY9BF466LPMC-G-JNE2 Infineon Technologies download Description: IC MCU 32BIT 544KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 48
DigiKey Programmable: Not Verified
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CY8C5466LTI-063 CY8C5466LTI-063 Infineon Technologies CY8C54.pdf Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
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LINDEMOBOARDTOBO1 LINDEMOBOARDTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLE7257SJ
Packaging: Bulk
Function: CAN Transceiver
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE7257SJ, TLE7258SJ, TLE7259-3G
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+6358.28 грн
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TLV49645TBXALA1 TLV49645TBXALA1 Infineon Technologies INFN-S-A0001301455-1.pdf?t.download=true&u=5oefqw Description: MAGNETIC SWITCH UNIPOLAR TO92S
Features: Temperature Compensated
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 16229 шт:
термін постачання 21-31 дні (днів)
1187+18.31 грн
Мінімальне замовлення: 1187
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IRSM506-076PA IRSM506-076PA Infineon Technologies IRSM506-076.pdf Description: IC HALF BRIDGE DRIVER 4A 23SOP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: AC Motors
Current - Output / Channel: 4A
Current - Peak Output: 15A
Technology: IGBT
Voltage - Load: 480V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
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ICE5AR4780BZS1XKLA1 ICE5AR4780BZS1XKLA1 Infineon Technologies Infineon-ICE5ARxxxxBZS-DataSheet-v02_30-EN.pdf?fileId=5546d462602a9dc801607d612b2645ad Description: ICE5AR4780BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 27.5 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
3+113.53 грн
50+56.08 грн
100+50.66 грн
500+37.73 грн
1000+31.86 грн
2000+30.69 грн
Мінімальне замовлення: 3
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CY7C64215-28PVXIT CY7C64215-28PVXIT Infineon Technologies Infineon-CY7C64215_enCoRe_III_Full-Speed_USB_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecbcf87457f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CNTRLR USB FS 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY7C642xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 28-SSOP
Number of I/O: 22
DigiKey Programmable: Not Verified
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CY8CKIT4700SPLUSTOBO1 CY8CKIT4700SPLUSTOBO1 Infineon Technologies Infineon-AUTOMOTIVE_PSOC_TM_4700S_PLUS_CY8CKIT-4700S-PLUS_EVALUATION_KIT_USER_GUIDE-UserManual-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00193659553155fd0 Description: CY8CKIT-4700S-PLUS
Packaging: Tray
Interface: I2C, SPI, UART, USB
Contents: Board(s)
Sensor Type: Proximity, Inductive
Utilized IC / Part: PSoC 4700S
Embedded: Yes, MCU
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+20629.29 грн
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DD1600S33HE4BPSA1 DD1600S33HE4BPSA1 Infineon Technologies Description: IHV IHM T
Packaging: Tray
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ISC060N06NM6ATMA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
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CYW920829B0M2P4TAI100-ES CYW920829B0M2P4TAI100-ES Infineon Technologies Infineon-CYW920829B0M2P4XXI100-EVK-20829_module_Evaluation_Kit_user_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d9cd7573a2c36 Description: AIROC CYW20829B0-P4TAI100 MODULE
Packaging: Box
Type: Transceiver; Bluetooth® 5.x (BLE)
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: CYW20829
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
1+6264.60 грн
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IRF7805TRPBF IRF7805TRPBF Infineon Technologies irf7805pbf.pdf?fileId=5546d462533600a401535607ccc41cc0 description Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
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IRF7805TRPBF IRF7805TRPBF Infineon Technologies irf7805pbf.pdf?fileId=5546d462533600a401535607ccc41cc0 description Description: MOSFET N-CH 30V 13A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
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IM06B15AC1SXKMA1 Infineon Technologies Description: CIPOS MINI
Packaging: Tube
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IM06B20AC1SXKMA1 Infineon Technologies Description: CIPOS MINI
Packaging: Tube
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IM06B30AC1SXKMA1 Infineon Technologies Description: CIPOS MINI
Packaging: Tube
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IM06B50GC1XKMA1 Infineon Technologies Infineon-IM06B50GC1-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c9625080601965ca7a4aa7a01 Description: CIPOS MINI
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 35 A
Voltage: 600 V
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IQDH35N03LM5CGSCATMA1 IQDH35N03LM5CGSCATMA1 Infineon Technologies Infineon-IQDH35N03LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c293450e35 Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
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IQDH35N03LM5CGSCATMA1 IQDH35N03LM5CGSCATMA1 Infineon Technologies Infineon-IQDH35N03LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c293450e35 Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
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IQDH35N03LM5SCATMA1 IQDH35N03LM5SCATMA1 Infineon Technologies IQDH35N03LM5SCATMA1.pdf Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
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IQDH35N03LM5SCATMA1 IQDH35N03LM5SCATMA1 Infineon Technologies IQDH35N03LM5SCATMA1.pdf Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
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IMM102T056MXUMA1 IMM102T056MXUMA1 Infineon Technologies Infineon-IMM100T-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b7012c7993b83 Description: IMOTION
Packaging: Bulk
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
45+514.12 грн
Мінімальне замовлення: 45
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FS150R07N3E4BOSA1 Infineon Technologies infineon-fs150r07n3e4-ds-v02_00-en_de.pdf_fileid=db3a30432f29829e012f44ea50311f66.pdf Description: FS150R07 - IGBT MODULE
Packaging: Bulk
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
4+6791.15 грн
Мінімальне замовлення: 4
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FP75R12N2T4BOSA1 FP75R12N2T4BOSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
Packaging: Bulk
на замовлення 727 шт:
термін постачання 21-31 дні (днів)
3+9400.48 грн
Мінімальне замовлення: 3
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CY7C1364C-166BZI CY7C1364C-166BZI Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 8MBIT PARALLEL 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.63V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 32
DigiKey Programmable: Not Verified
на замовлення 1640 шт:
термін постачання 21-31 дні (днів)
26+907.91 грн
Мінімальне замовлення: 26
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SAK-XE164GN-24F80L AA SAK-XE164GN-24F80L AA Infineon Technologies Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9 Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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SAK-XE164FN-24F80L AA SAK-XE164FN-24F80L AA Infineon Technologies Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9 Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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SAK-XE164GN-40F80L AA SAK-XE164GN-40F80L AA Infineon Technologies Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9 Description: IC MCU 16BIT 320KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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EB2ED24103D1BCDTOBO1 EB2ED24103D1BCDTOBO1 Infineon Technologies Infineon-Infineon-2ED2410-EB-Family-UG-UserManual-v01_01-EN.pdf?fileId=8ac78c8c82ce56640182e88b28167006 Description: EB 2ED2410 3D 1BCD
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2410-EM
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+6874.31 грн
В кошику  од. на суму  грн.
EB2ED24103D1BCDPTOBO1 EB2ED24103D1BCDPTOBO1 Infineon Technologies Infineon-Infineon-2ED2410-EB-Family-UG-UserManual-v01_01-EN.pdf?fileId=8ac78c8c82ce56640182e88b28167006 Description: EB 2ED2410 3D 1BCDP
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2410-EM
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+7901.61 грн
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AIMBG75R020M1HXTMA1 AIMBG75R020M1HXTMA1 Infineon Technologies Description: AIMBG75R020M1HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 34.1A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2326 pF @ 500 V
Qualification: AEC-Q101
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AIMBG75R020M1HXTMA1 AIMBG75R020M1HXTMA1 Infineon Technologies Description: AIMBG75R020M1HXTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 34.1A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2326 pF @ 500 V
Qualification: AEC-Q101
на замовлення 273 шт:
термін постачання 21-31 дні (днів)
1+1128.91 грн
10+886.42 грн
100+818.08 грн
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CY22392FXC CY22392FXC Infineon Technologies download Description: IC CLKSYN FLSH PROG 3PLL 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
на замовлення 1820 шт:
термін постачання 21-31 дні (днів)
1+1561.59 грн
10+1204.15 грн
96+1049.20 грн
192+955.65 грн
288+941.14 грн
576+919.85 грн
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TLS830A4EPV50XUMA1 TLS830A4EPV50XUMA1 Infineon Technologies Description: OPTIREG LINEAR
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TSDSO-14
Voltage - Output (Min/Fixed): 5V
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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TLS830A4EPV50BOARDTOBO1 TLS830A4EPV50BOARDTOBO1 Infineon Technologies Infineon-Z8F80471187_TLS830A4EPV50_Demoboard-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019108462f217635 Description: EVAL BOARD FOR TLS830A4EPV50
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 3.2V ~ 40V
Current - Output: 300mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS830A4EPV50
Channels per IC: 1 - Single
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ISC009N03LF2SATMA1 ISC009N03LF2SATMA1 Infineon Technologies Description: ISC009N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 341A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
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ISC009N03LF2SATMA1 ISC009N03LF2SATMA1 Infineon Technologies Description: ISC009N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 341A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
на замовлення 4390 шт:
термін постачання 21-31 дні (днів)
4+98.44 грн
10+68.96 грн
25+62.47 грн
100+51.96 грн
250+48.77 грн
500+46.85 грн
1000+44.53 грн
2500+42.89 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ISC015N03LF2SATMA1 ISC015N03LF2SATMA1 Infineon Technologies Infineon-ISC015N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912755420fff Description: ISC015N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+30.54 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISC015N03LF2SATMA1 ISC015N03LF2SATMA1 Infineon Technologies Infineon-ISC015N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912755420fff Description: ISC015N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5+66.69 грн
10+45.87 грн
25+41.40 грн
100+34.16 грн
250+31.93 грн
500+30.58 грн
1000+28.99 грн
2500+27.84 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IGLR65R270D2XUMA1 IGLR65R270D2XUMA1 Infineon Technologies IGLR65R270D2XUMA1.pdf Description: IGLR65R270D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
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IGLR65R270D2XUMA1 IGLR65R270D2XUMA1 Infineon Technologies IGLR65R270D2XUMA1.pdf Description: IGLR65R270D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
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IKWH70N67PR7XKSA1 IKWH70N67PR7XKSA1 Infineon Technologies IKWH70N67PR7XKSA1.pdf Description: IGBT TRENCH FS 670V 140A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 70A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/246ns
Switching Energy: 1.58mJ (on), 1.14mJ (off)
Test Condition: 400V, 70A, 9.8Ohm, 15V
Gate Charge: 181 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 670 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 313 W
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
1+381.86 грн
30+206.16 грн
120+170.62 грн
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CY62146GE30-45BVXI CY62146GE30-45BVXI Infineon Technologies Infineon-CY62146G_CY62146GE_CY62146GSL_CY62146GESL_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed92ff45ad1&utm_source=cypress&utm_medium=referral&u Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY62157GE30-45BVXI CY62157GE30-45BVXI Infineon Technologies download Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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CY62157GE30-45ZXI CY62157GE30-45ZXI Infineon Technologies download Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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CY62158GE30-45BVXI CY62158GE30-45BVXI Infineon Technologies download Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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S26KS128SDGBHV030 S26KS128SDGBHV030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S26KL256SDABHI030 S26KL256SDABHI030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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AIMBG75R060M1HXTMA1 AIMBG75R060M1HXTMA1 Infineon Technologies Description: AIMBG75R060M1HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+320.97 грн
2000+302.66 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
AIMBG75R060M1HXTMA1 AIMBG75R060M1HXTMA1 Infineon Technologies Description: AIMBG75R060M1HXTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
на замовлення 2497 шт:
термін постачання 21-31 дні (днів)
1+545.40 грн
10+405.10 грн
25+375.09 грн
100+321.03 грн
250+306.28 грн
500+297.38 грн
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IR2102PBF IR2102PBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 32555 шт:
термін постачання 21-31 дні (днів)
118+177.99 грн
Мінімальне замовлення: 118
В кошику  од. на суму  грн.
IR2102PBF IR2102PBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
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CY7C1352S-133AXC CY7C1352S-133AXC Infineon Technologies Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
на замовлення 923 шт:
термін постачання 21-31 дні (днів)
51+455.48 грн
Мінімальне замовлення: 51
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FF100R12W1T7EB11BPSA1 Infineon Technologies FF100R12W1T7EB11BPSA1.pdf Description: EASY STANDARD
Packaging: Tray
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+4106.80 грн
24+3085.89 грн
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CY7C60323-LFXC CY7C60323-LFXC Infineon Technologies Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I2C, SPI
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 6606 шт:
термін постачання 21-31 дні (днів)
161+142.43 грн
Мінімальне замовлення: 161
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ISC008N06LM6ATMA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
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IPP70N04S406AKSA1 IPP70N04S406AKSA1 Infineon Technologies Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c501db65d98 Description: MOSFET N-CH 40V 70A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
Qualification: AEC-Q101
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CG10055AFT
Виробник: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
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TLE4971A050N5E0002XUMA1
Виробник: Infineon Technologies
Description: CURRENT SENS ATV
Packaging: Tape & Reel (TR)
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CY9BF466LQN-G-AVE2 download
CY9BF466LQN-G-AVE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
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CY9BF466LPMC-G-JNE2 download
CY9BF466LPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 48
DigiKey Programmable: Not Verified
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CY8C5466LTI-063 CY8C54.pdf
CY8C5466LTI-063
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
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LINDEMOBOARDTOBO1
LINDEMOBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE7257SJ
Packaging: Bulk
Function: CAN Transceiver
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE7257SJ, TLE7258SJ, TLE7259-3G
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6358.28 грн
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TLV49645TBXALA1 INFN-S-A0001301455-1.pdf?t.download=true&u=5oefqw
TLV49645TBXALA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR TO92S
Features: Temperature Compensated
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 16229 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1187+18.31 грн
Мінімальне замовлення: 1187
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IRSM506-076PA IRSM506-076.pdf
IRSM506-076PA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4A 23SOP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: AC Motors
Current - Output / Channel: 4A
Current - Peak Output: 15A
Technology: IGBT
Voltage - Load: 480V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
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ICE5AR4780BZS1XKLA1 Infineon-ICE5ARxxxxBZS-DataSheet-v02_30-EN.pdf?fileId=5546d462602a9dc801607d612b2645ad
ICE5AR4780BZS1XKLA1
Виробник: Infineon Technologies
Description: ICE5AR4780BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 27.5 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+113.53 грн
50+56.08 грн
100+50.66 грн
500+37.73 грн
1000+31.86 грн
2000+30.69 грн
Мінімальне замовлення: 3
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CY7C64215-28PVXIT Infineon-CY7C64215_enCoRe_III_Full-Speed_USB_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecbcf87457f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C64215-28PVXIT
Виробник: Infineon Technologies
Description: IC CNTRLR USB FS 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY7C642xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 28-SSOP
Number of I/O: 22
DigiKey Programmable: Not Verified
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CY8CKIT4700SPLUSTOBO1 Infineon-AUTOMOTIVE_PSOC_TM_4700S_PLUS_CY8CKIT-4700S-PLUS_EVALUATION_KIT_USER_GUIDE-UserManual-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00193659553155fd0
CY8CKIT4700SPLUSTOBO1
Виробник: Infineon Technologies
Description: CY8CKIT-4700S-PLUS
Packaging: Tray
Interface: I2C, SPI, UART, USB
Contents: Board(s)
Sensor Type: Proximity, Inductive
Utilized IC / Part: PSoC 4700S
Embedded: Yes, MCU
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+20629.29 грн
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DD1600S33HE4BPSA1
DD1600S33HE4BPSA1
Виробник: Infineon Technologies
Description: IHV IHM T
Packaging: Tray
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ISC060N06NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
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CYW920829B0M2P4TAI100-ES Infineon-CYW920829B0M2P4XXI100-EVK-20829_module_Evaluation_Kit_user_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d9cd7573a2c36
CYW920829B0M2P4TAI100-ES
Виробник: Infineon Technologies
Description: AIROC CYW20829B0-P4TAI100 MODULE
Packaging: Box
Type: Transceiver; Bluetooth® 5.x (BLE)
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: CYW20829
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6264.60 грн
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IRF7805TRPBF description irf7805pbf.pdf?fileId=5546d462533600a401535607ccc41cc0
IRF7805TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
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IRF7805TRPBF description irf7805pbf.pdf?fileId=5546d462533600a401535607ccc41cc0
IRF7805TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
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IM06B15AC1SXKMA1
Виробник: Infineon Technologies
Description: CIPOS MINI
Packaging: Tube
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IM06B20AC1SXKMA1
Виробник: Infineon Technologies
Description: CIPOS MINI
Packaging: Tube
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IM06B30AC1SXKMA1
Виробник: Infineon Technologies
Description: CIPOS MINI
Packaging: Tube
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IM06B50GC1XKMA1 Infineon-IM06B50GC1-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c9625080601965ca7a4aa7a01
Виробник: Infineon Technologies
Description: CIPOS MINI
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 35 A
Voltage: 600 V
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IQDH35N03LM5CGSCATMA1 Infineon-IQDH35N03LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c293450e35
IQDH35N03LM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
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IQDH35N03LM5CGSCATMA1 Infineon-IQDH35N03LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c293450e35
IQDH35N03LM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
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IQDH35N03LM5SCATMA1 IQDH35N03LM5SCATMA1.pdf
IQDH35N03LM5SCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
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IQDH35N03LM5SCATMA1 IQDH35N03LM5SCATMA1.pdf
IQDH35N03LM5SCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
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IMM102T056MXUMA1 Infineon-IMM100T-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b7012c7993b83
IMM102T056MXUMA1
Виробник: Infineon Technologies
Description: IMOTION
Packaging: Bulk
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
45+514.12 грн
Мінімальне замовлення: 45
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FS150R07N3E4BOSA1 infineon-fs150r07n3e4-ds-v02_00-en_de.pdf_fileid=db3a30432f29829e012f44ea50311f66.pdf
Виробник: Infineon Technologies
Description: FS150R07 - IGBT MODULE
Packaging: Bulk
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+6791.15 грн
Мінімальне замовлення: 4
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FP75R12N2T4BOSA1
FP75R12N2T4BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
Packaging: Bulk
на замовлення 727 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+9400.48 грн
Мінімальне замовлення: 3
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CY7C1364C-166BZI ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1364C-166BZI
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.63V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 32
DigiKey Programmable: Not Verified
на замовлення 1640 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
26+907.91 грн
Мінімальне замовлення: 26
В кошику  од. на суму  грн.
SAK-XE164GN-24F80L AA Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9
SAK-XE164GN-24F80L AA
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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SAK-XE164FN-24F80L AA Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9
SAK-XE164FN-24F80L AA
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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SAK-XE164GN-40F80L AA Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9
SAK-XE164GN-40F80L AA
Виробник: Infineon Technologies
Description: IC MCU 16BIT 320KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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EB2ED24103D1BCDTOBO1 Infineon-Infineon-2ED2410-EB-Family-UG-UserManual-v01_01-EN.pdf?fileId=8ac78c8c82ce56640182e88b28167006
EB2ED24103D1BCDTOBO1
Виробник: Infineon Technologies
Description: EB 2ED2410 3D 1BCD
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2410-EM
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6874.31 грн
В кошику  од. на суму  грн.
EB2ED24103D1BCDPTOBO1 Infineon-Infineon-2ED2410-EB-Family-UG-UserManual-v01_01-EN.pdf?fileId=8ac78c8c82ce56640182e88b28167006
EB2ED24103D1BCDPTOBO1
Виробник: Infineon Technologies
Description: EB 2ED2410 3D 1BCDP
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2410-EM
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7901.61 грн
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AIMBG75R020M1HXTMA1
AIMBG75R020M1HXTMA1
Виробник: Infineon Technologies
Description: AIMBG75R020M1HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 34.1A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2326 pF @ 500 V
Qualification: AEC-Q101
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AIMBG75R020M1HXTMA1
AIMBG75R020M1HXTMA1
Виробник: Infineon Technologies
Description: AIMBG75R020M1HXTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 34.1A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2326 pF @ 500 V
Qualification: AEC-Q101
на замовлення 273 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1128.91 грн
10+886.42 грн
100+818.08 грн
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CY22392FXC download
CY22392FXC
Виробник: Infineon Technologies
Description: IC CLKSYN FLSH PROG 3PLL 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
на замовлення 1820 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1561.59 грн
10+1204.15 грн
96+1049.20 грн
192+955.65 грн
288+941.14 грн
576+919.85 грн
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TLS830A4EPV50XUMA1
TLS830A4EPV50XUMA1
Виробник: Infineon Technologies
Description: OPTIREG LINEAR
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TSDSO-14
Voltage - Output (Min/Fixed): 5V
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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TLS830A4EPV50BOARDTOBO1 Infineon-Z8F80471187_TLS830A4EPV50_Demoboard-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019108462f217635
TLS830A4EPV50BOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS830A4EPV50
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 3.2V ~ 40V
Current - Output: 300mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS830A4EPV50
Channels per IC: 1 - Single
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ISC009N03LF2SATMA1
ISC009N03LF2SATMA1
Виробник: Infineon Technologies
Description: ISC009N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 341A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
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ISC009N03LF2SATMA1
ISC009N03LF2SATMA1
Виробник: Infineon Technologies
Description: ISC009N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 341A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
на замовлення 4390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+98.44 грн
10+68.96 грн
25+62.47 грн
100+51.96 грн
250+48.77 грн
500+46.85 грн
1000+44.53 грн
2500+42.89 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ISC015N03LF2SATMA1 Infineon-ISC015N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912755420fff
ISC015N03LF2SATMA1
Виробник: Infineon Technologies
Description: ISC015N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+30.54 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISC015N03LF2SATMA1 Infineon-ISC015N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912755420fff
ISC015N03LF2SATMA1
Виробник: Infineon Technologies
Description: ISC015N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+66.69 грн
10+45.87 грн
25+41.40 грн
100+34.16 грн
250+31.93 грн
500+30.58 грн
1000+28.99 грн
2500+27.84 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IGLR65R270D2XUMA1 IGLR65R270D2XUMA1.pdf
IGLR65R270D2XUMA1
Виробник: Infineon Technologies
Description: IGLR65R270D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
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IGLR65R270D2XUMA1 IGLR65R270D2XUMA1.pdf
IGLR65R270D2XUMA1
Виробник: Infineon Technologies
Description: IGLR65R270D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
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IKWH70N67PR7XKSA1 IKWH70N67PR7XKSA1.pdf
IKWH70N67PR7XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 670V 140A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 70A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/246ns
Switching Energy: 1.58mJ (on), 1.14mJ (off)
Test Condition: 400V, 70A, 9.8Ohm, 15V
Gate Charge: 181 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 670 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 313 W
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+381.86 грн
30+206.16 грн
120+170.62 грн
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CY62146GE30-45BVXI Infineon-CY62146G_CY62146GE_CY62146GSL_CY62146GESL_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed92ff45ad1&utm_source=cypress&utm_medium=referral&u
CY62146GE30-45BVXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY62157GE30-45BVXI download
CY62157GE30-45BVXI
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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CY62157GE30-45ZXI download
CY62157GE30-45ZXI
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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CY62158GE30-45BVXI download
CY62158GE30-45BVXI
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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S26KS128SDGBHV030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KS128SDGBHV030
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S26KL256SDABHI030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KL256SDABHI030
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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AIMBG75R060M1HXTMA1
AIMBG75R060M1HXTMA1
Виробник: Infineon Technologies
Description: AIMBG75R060M1HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+320.97 грн
2000+302.66 грн
Мінімальне замовлення: 1000
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AIMBG75R060M1HXTMA1
AIMBG75R060M1HXTMA1
Виробник: Infineon Technologies
Description: AIMBG75R060M1HXTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
на замовлення 2497 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+545.40 грн
10+405.10 грн
25+375.09 грн
100+321.03 грн
250+306.28 грн
500+297.38 грн
В кошику  од. на суму  грн.
IR2102PBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 32555 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
118+177.99 грн
Мінімальне замовлення: 118
В кошику  од. на суму  грн.
IR2102PBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1352S-133AXC
CY7C1352S-133AXC
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
на замовлення 923 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
51+455.48 грн
Мінімальне замовлення: 51
В кошику  од. на суму  грн.
FF100R12W1T7EB11BPSA1 FF100R12W1T7EB11BPSA1.pdf
Виробник: Infineon Technologies
Description: EASY STANDARD
Packaging: Tray
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4106.80 грн
24+3085.89 грн
В кошику  од. на суму  грн.
CY7C60323-LFXC
CY7C60323-LFXC
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I2C, SPI
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 6606 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
161+142.43 грн
Мінімальне замовлення: 161
В кошику  од. на суму  грн.
ISC008N06LM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
товару немає в наявності
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IPP70N04S406AKSA1 Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c501db65d98
IPP70N04S406AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
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