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TLE92633BQXXUMA2 TLE92633BQXXUMA2 Infineon Technologies Infineon-TLE9263-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016097f386a63984 Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
на замовлення 2650 шт:
термін постачання 21-31 дні (днів)
1+331.85 грн
10+242.16 грн
25+222.85 грн
100+189.22 грн
250+179.73 грн
500+174.01 грн
1000+166.53 грн
В кошику  од. на суму  грн.
BSM10GD120DN2E3224BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
товару немає в наявності
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FS150R12N3T7B11BPSA1 Infineon Technologies Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
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FS150R12KT4PBPSA2 Infineon Technologies Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9350 pF @ 25 V
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FS150R12N3T4PB81BPSA1 Infineon Technologies Description: LOW POWER ECONO
Packaging: Tray
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IGD03N120S7ATMA1 IGD03N120S7ATMA1 Infineon Technologies Description: IGBT TRENCH 1200V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 45 W
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IGD03N120S7ATMA1 IGD03N120S7ATMA1 Infineon Technologies Description: IGBT TRENCH 1200V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 45 W
на замовлення 2390 шт:
термін постачання 21-31 дні (днів)
4+85.95 грн
10+59.47 грн
25+53.77 грн
100+44.56 грн
250+41.75 грн
500+40.05 грн
1000+38.02 грн
Мінімальне замовлення: 4
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S29GL01GT10FHI030 S29GL01GT10FHI030 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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TLE4262GMXUMA2 TLE4262GMXUMA2 Infineon Technologies TLE4262GMXUMA1.pdf?t.download=true&amp;u=n9mhyd Description: OPTIREG LINEAR
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
на замовлення 10941 шт:
термін постачання 21-31 дні (днів)
290+78.81 грн
Мінімальне замовлення: 290
В кошику  од. на суму  грн.
TLF50241ELXUMA2 TLF50241ELXUMA2 Infineon Technologies Infineon-TLF50241EL-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969d2bb0641ee Description: IC REG BUCK 5V 500MA PGSSOP14
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-EP
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 41736 шт:
термін постачання 21-31 дні (днів)
228+96.90 грн
Мінімальне замовлення: 228
В кошику  од. на суму  грн.
AUIRFP064N AUIRFP064N Infineon Technologies AUIRFP064N.pdf Description: MOSFET N-CH 55V 110A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Qualification: AEC-Q101
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TDA38725A0000AUMA1 TDA38725A0000AUMA1 Infineon Technologies Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
товару немає в наявності
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TDA38725A0000AUMA1 TDA38725A0000AUMA1 Infineon Technologies Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
на замовлення 2097 шт:
термін постачання 21-31 дні (днів)
1+352.54 грн
10+258.41 грн
25+237.99 грн
100+202.30 грн
250+192.26 грн
500+186.21 грн
1000+178.26 грн
В кошику  од. на суму  грн.
TDA38740A0000AUMA1 TDA38740A0000AUMA1 Infineon Technologies Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
товару немає в наявності
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TDA38740A0000AUMA1 TDA38740A0000AUMA1 Infineon Technologies Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
1+385.97 грн
10+283.70 грн
25+261.63 грн
100+222.72 грн
250+211.85 грн
500+205.29 грн
1000+196.62 грн
2500+191.02 грн
В кошику  од. на суму  грн.
TDA38640A0000AUMA1 TDA38640A0000AUMA1 Infineon Technologies Infineon-TDA38640A-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190fe81a8fd00fc Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
товару немає в наявності
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TDA38640A0000AUMA1 TDA38640A0000AUMA1 Infineon Technologies Infineon-TDA38640A-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190fe81a8fd00fc Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
на замовлення 4999 шт:
термін постачання 21-31 дні (днів)
1+376.42 грн
10+276.19 грн
25+254.55 грн
100+216.60 грн
250+205.98 грн
500+199.57 грн
1000+191.12 грн
2500+185.65 грн
В кошику  од. на суму  грн.
TLF12501AUMA1 TLF12501AUMA1 Infineon Technologies Description: IC GATE DRVR VIQFN36
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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IRAMS12UP60A-2 IRAMS12UP60A-2 Infineon Technologies IRAMS12UP60A.pdf Description: POWER DRIVER 3 PHASE 600V MODULE
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 12 A
Voltage: 600 V
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ISC055N15NM6ATMA1 ISC055N15NM6ATMA1 Infineon Technologies Infineon-ISC055N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190772508436ff9 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
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ISC055N15NM6ATMA1 ISC055N15NM6ATMA1 Infineon Technologies Infineon-ISC055N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190772508436ff9 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
на замовлення 4662 шт:
термін постачання 21-31 дні (днів)
1+370.05 грн
10+271.21 грн
25+249.98 грн
100+212.64 грн
250+202.18 грн
500+195.87 грн
1000+187.56 грн
2500+182.17 грн
В кошику  од. на суму  грн.
CY7C1314KV18-250BZXC CY7C1314KV18-250BZXC Infineon Technologies download Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 126 шт:
термін постачання 21-31 дні (днів)
1+2417.67 грн
10+2066.19 грн
25+1970.16 грн
40+1804.23 грн
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IR21271PBF IR21271PBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 description Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 2941 шт:
термін постачання 21-31 дні (днів)
2+225.21 грн
10+163.69 грн
50+142.23 грн
100+127.24 грн
250+120.65 грн
500+118.36 грн
Мінімальне замовлення: 2
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FS100R12N2T4BPSA1 Infineon Technologies InfineonFS100R12N2T4DSv0200EN.pdf Description: FS100R12 - IGBT MODULE
Packaging: Bulk
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
3+9613.91 грн
Мінімальне замовлення: 3
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S25FL512SAGMFAG10 S25FL512SAGMFAG10 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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IRFB3256PBF IRFB3256PBF Infineon Technologies IRSDS13224-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
на замовлення 1449 шт:
термін постачання 21-31 дні (днів)
189+116.71 грн
Мінімальне замовлення: 189
В кошику  од. на суму  грн.
IRFB3256PBF IRFB3256PBF Infineon Technologies IRSDS13224-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
товару немає в наявності
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TRUSTMV3SHIELDTOBO1 TRUSTMV3SHIELDTOBO1 Infineon Technologies Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a Description: TRUSTMV3SHIELDTOBO1
Packaging: Box
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust E
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+2077.06 грн
В кошику  од. на суму  грн.
IKWH30N67PR7XKSA1 IKWH30N67PR7XKSA1 Infineon Technologies Infineon-IKWH30N67PR7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001933edc3c4d5e6a Description: IGBT TRENCH FS 670V 71A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/124ns
Switching Energy: 450µJ (on), 260µJ (off)
Test Condition: 400V, 30A, 9.8Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 71 A
Voltage - Collector Emitter Breakdown (Max): 670 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 179 W
на замовлення 223 шт:
термін постачання 21-31 дні (днів)
2+268.98 грн
30+140.78 грн
120+114.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKWH40N67PR7XKSA1 IKWH40N67PR7XKSA1 Infineon Technologies IKWH40N67PR7XKSA1.pdf Description: IGBT TRENCH FS 670V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/146ns
Switching Energy: 660µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 9.8Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 670 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 208 W
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
2+269.78 грн
30+142.33 грн
120+116.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPT025N15NM6ATMA1 IPT025N15NM6ATMA1 Infineon Technologies Infineon-IPT025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077409ede701c Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 263A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPT025N15NM6ATMA1 IPT025N15NM6ATMA1 Infineon Technologies Infineon-IPT025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077409ede701c Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 263A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
товару немає в наявності
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IPP029N15NM6AKSA1 IPP029N15NM6AKSA1 Infineon Technologies Infineon-IPP029N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077531a58704f Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
на замовлення 1468 шт:
термін постачання 21-31 дні (днів)
1+644.61 грн
50+495.34 грн
100+422.38 грн
500+365.72 грн
1000+365.56 грн
В кошику  од. на суму  грн.
IPF026N15NM6ATMA1 IPF026N15NM6ATMA1 Infineon Technologies Infineon-IPF026N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907752f9db7046 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 239A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+365.08 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPF026N15NM6ATMA1 IPF026N15NM6ATMA1 Infineon Technologies Infineon-IPF026N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907752f9db7046 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 239A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
на замовлення 1589 шт:
термін постачання 21-31 дні (днів)
1+676.44 грн
10+533.45 грн
100+427.05 грн
500+381.75 грн
В кошику  од. на суму  грн.
IPB95R450PFD7ATMA1 IPB95R450PFD7ATMA1 Infineon Technologies Infineon-IPB95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb905600405 Description: MOSFET N-CH 950V 13.3A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
товару немає в наявності
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IPB95R450PFD7ATMA1 IPB95R450PFD7ATMA1 Infineon Technologies Infineon-IPB95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb905600405 Description: MOSFET N-CH 950V 13.3A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
на замовлення 865 шт:
термін постачання 21-31 дні (днів)
2+270.58 грн
10+170.59 грн
100+119.32 грн
500+91.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQFH36N04NM6ATMA1 IQFH36N04NM6ATMA1 Infineon Technologies Description: IQFH36N04NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc)
Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V
товару немає в наявності
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IQFH36N04NM6ATMA1 IQFH36N04NM6ATMA1 Infineon Technologies Description: IQFH36N04NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc)
Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V
на замовлення 1476 шт:
термін постачання 21-31 дні (днів)
1+385.97 грн
5+334.12 грн
10+320.02 грн
25+284.59 грн
50+273.80 грн
100+263.96 грн
500+240.11 грн
1000+232.84 грн
В кошику  од. на суму  грн.
TLE92623BQXV33XUMA2 TLE92623BQXV33XUMA2 Infineon Technologies Infineon-TLE9262-3BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc80160978ed9493954 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
товару немає в наявності
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TLE92623BQXXUMA2 TLE92623BQXXUMA2 Infineon Technologies Infineon-TLE9262-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609785aa013951 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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IPT017N10NM5LF2ATMA1 IPT017N10NM5LF2ATMA1 Infineon Technologies IPT017N10NM5LF2ATMA1.pdf Description: IPT017N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+262.45 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT017N10NM5LF2ATMA1 IPT017N10NM5LF2ATMA1 Infineon Technologies IPT017N10NM5LF2ATMA1.pdf Description: IPT017N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+608.00 грн
10+397.73 грн
100+291.87 грн
500+235.40 грн
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IR7304SPBF IR7304SPBF Infineon Technologies ir7304s.pdf?fileId=5546d462533600a4015355d62a63182e Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 700 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
DigiKey Programmable: Not Verified
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CY9AFA41NAPMC-G-JNE2 CY9AFA41NAPMC-G-JNE2 Infineon Technologies Description: IC MCU 32BIT 96KB 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
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IRS2184PBF IRS2184PBF Infineon Technologies irs2184.pdf?fileId=5546d462533600a401535676d8da27db Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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CY7C1363C-133AXC CY7C1363C-133AXC Infineon Technologies Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
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FF450R17ME4PBOSA1 FF450R17ME4PBOSA1 Infineon Technologies Infineon-FF450R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e41ca75068e Description: IGBT MOD 1700V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+15549.32 грн
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S26HL512TFPBHV010 S26HL512TFPBHV010 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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CY8C3445AXI-104T CY8C3445AXI-104T Infineon Technologies download Description: IC MCU 8BIT 32KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
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KITXMC71EVKLITEV1TOBO1 KITXMC71EVKLITEV1TOBO1 Infineon Technologies Infineon-KIT_XMC71_EVK_LITE_V1_XMC7100_Lite_Evaluation_Board_release_notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c7ec4575d0c6b Description: XMC7100D EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M0+, Cortex®-M7
Utilized IC / Part: XMC7100D
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+2568.87 грн
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EVALXMC4800PSOC6M5TOBO1 EVALXMC4800PSOC6M5TOBO1 Infineon Technologies Infineon-UG-2023-07-EVAL-XMC4800PSOC6M5-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e12871028537c Description: XMC4800 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4800
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+20890.80 грн
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IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 Infineon Technologies Infineon-IQD009N06NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b653e47149d2 Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
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IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 Infineon Technologies Infineon-IQD009N06NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b653e47149d2 Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
на замовлення 4756 шт:
термін постачання 21-31 дні (днів)
1+349.36 грн
10+259.79 грн
100+210.59 грн
500+171.33 грн
1000+153.69 грн
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IPA65R225C7XKSA1 IPA65R225C7XKSA1 Infineon Technologies Infineon-IPA65R225C7-DS-v02_00-en.pdf?fileId=db3a304343bec32d0143bf743f7c0c63 Description: MOSFET N-CH 650V 7A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 419 шт:
термін постачання 21-31 дні (днів)
251+91.62 грн
Мінімальне замовлення: 251
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CYT2B75DADQ0AZEGSHQLA1 Infineon Technologies Description: IC MCU
Packaging: Tray
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IR21064PBF IR21064PBF Infineon Technologies ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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REFDR3KIMBGSIC2MATOBO1 REFDR3KIMBGSIC2MATOBO1 Infineon Technologies Description: EVAL BOARD FOR 1ED3122MC12H
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3122MC12H, IMBG120R040M2H
Primary Attributes: Isolated
Secondary Attributes: On-Board Test Points
Embedded: No
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S25FS128SAGBHM200 S25FS128SAGBHM200 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4149LDSS593XQLA1 CY8C4149LDSS593XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 384KB FLASH 48VFQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 40
на замовлення 2597 шт:
термін постачання 21-31 дні (днів)
1+853.90 грн
10+643.80 грн
25+599.21 грн
80+522.60 грн
260+493.62 грн
520+480.56 грн
1040+462.11 грн
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TLE92633BQXXUMA2 Infineon-TLE9263-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016097f386a63984
TLE92633BQXXUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
на замовлення 2650 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+331.85 грн
10+242.16 грн
25+222.85 грн
100+189.22 грн
250+179.73 грн
500+174.01 грн
1000+166.53 грн
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BSM10GD120DN2E3224BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
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FS150R12N3T7B11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
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FS150R12KT4PBPSA2
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9350 pF @ 25 V
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FS150R12N3T4PB81BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
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IGD03N120S7ATMA1
IGD03N120S7ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 45 W
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IGD03N120S7ATMA1
IGD03N120S7ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 45 W
на замовлення 2390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+85.95 грн
10+59.47 грн
25+53.77 грн
100+44.56 грн
250+41.75 грн
500+40.05 грн
1000+38.02 грн
Мінімальне замовлення: 4
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S29GL01GT10FHI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT10FHI030
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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TLE4262GMXUMA2 TLE4262GMXUMA1.pdf?t.download=true&amp;u=n9mhyd
TLE4262GMXUMA2
Виробник: Infineon Technologies
Description: OPTIREG LINEAR
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
на замовлення 10941 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
290+78.81 грн
Мінімальне замовлення: 290
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TLF50241ELXUMA2 Infineon-TLF50241EL-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969d2bb0641ee
TLF50241ELXUMA2
Виробник: Infineon Technologies
Description: IC REG BUCK 5V 500MA PGSSOP14
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-EP
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 41736 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
228+96.90 грн
Мінімальне замовлення: 228
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AUIRFP064N AUIRFP064N.pdf
AUIRFP064N
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 110A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Qualification: AEC-Q101
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TDA38725A0000AUMA1 Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c
TDA38725A0000AUMA1
Виробник: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
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TDA38725A0000AUMA1 Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c
TDA38725A0000AUMA1
Виробник: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
на замовлення 2097 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+352.54 грн
10+258.41 грн
25+237.99 грн
100+202.30 грн
250+192.26 грн
500+186.21 грн
1000+178.26 грн
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TDA38740A0000AUMA1 Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c
TDA38740A0000AUMA1
Виробник: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
товару немає в наявності
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TDA38740A0000AUMA1 Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c
TDA38740A0000AUMA1
Виробник: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+385.97 грн
10+283.70 грн
25+261.63 грн
100+222.72 грн
250+211.85 грн
500+205.29 грн
1000+196.62 грн
2500+191.02 грн
В кошику  од. на суму  грн.
TDA38640A0000AUMA1 Infineon-TDA38640A-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190fe81a8fd00fc
TDA38640A0000AUMA1
Виробник: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
товару немає в наявності
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TDA38640A0000AUMA1 Infineon-TDA38640A-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190fe81a8fd00fc
TDA38640A0000AUMA1
Виробник: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
на замовлення 4999 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+376.42 грн
10+276.19 грн
25+254.55 грн
100+216.60 грн
250+205.98 грн
500+199.57 грн
1000+191.12 грн
2500+185.65 грн
В кошику  од. на суму  грн.
TLF12501AUMA1
TLF12501AUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR VIQFN36
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRAMS12UP60A-2 IRAMS12UP60A.pdf
IRAMS12UP60A-2
Виробник: Infineon Technologies
Description: POWER DRIVER 3 PHASE 600V MODULE
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 12 A
Voltage: 600 V
товару немає в наявності
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ISC055N15NM6ATMA1 Infineon-ISC055N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190772508436ff9
ISC055N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
товару немає в наявності
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ISC055N15NM6ATMA1 Infineon-ISC055N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190772508436ff9
ISC055N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
на замовлення 4662 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+370.05 грн
10+271.21 грн
25+249.98 грн
100+212.64 грн
250+202.18 грн
500+195.87 грн
1000+187.56 грн
2500+182.17 грн
В кошику  од. на суму  грн.
CY7C1314KV18-250BZXC download
CY7C1314KV18-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 126 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2417.67 грн
10+2066.19 грн
25+1970.16 грн
40+1804.23 грн
В кошику  од. на суму  грн.
IR21271PBF description ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR21271PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 2941 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+225.21 грн
10+163.69 грн
50+142.23 грн
100+127.24 грн
250+120.65 грн
500+118.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FS100R12N2T4BPSA1 InfineonFS100R12N2T4DSv0200EN.pdf
Виробник: Infineon Technologies
Description: FS100R12 - IGBT MODULE
Packaging: Bulk
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+9613.91 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S25FL512SAGMFAG10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGMFAG10
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
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IRFB3256PBF IRSDS13224-1.pdf?t.download=true&u=5oefqw
IRFB3256PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
на замовлення 1449 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
189+116.71 грн
Мінімальне замовлення: 189
В кошику  од. на суму  грн.
IRFB3256PBF IRSDS13224-1.pdf?t.download=true&u=5oefqw
IRFB3256PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
товару немає в наявності
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TRUSTMV3SHIELDTOBO1 Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a
TRUSTMV3SHIELDTOBO1
Виробник: Infineon Technologies
Description: TRUSTMV3SHIELDTOBO1
Packaging: Box
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust E
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2077.06 грн
В кошику  од. на суму  грн.
IKWH30N67PR7XKSA1 Infineon-IKWH30N67PR7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001933edc3c4d5e6a
IKWH30N67PR7XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 670V 71A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/124ns
Switching Energy: 450µJ (on), 260µJ (off)
Test Condition: 400V, 30A, 9.8Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 71 A
Voltage - Collector Emitter Breakdown (Max): 670 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 179 W
на замовлення 223 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+268.98 грн
30+140.78 грн
120+114.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKWH40N67PR7XKSA1 IKWH40N67PR7XKSA1.pdf
IKWH40N67PR7XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 670V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/146ns
Switching Energy: 660µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 9.8Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 670 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 208 W
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+269.78 грн
30+142.33 грн
120+116.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPT025N15NM6ATMA1 Infineon-IPT025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077409ede701c
IPT025N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 263A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
товару немає в наявності
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IPT025N15NM6ATMA1 Infineon-IPT025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077409ede701c
IPT025N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 263A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
товару немає в наявності
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IPP029N15NM6AKSA1 Infineon-IPP029N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077531a58704f
IPP029N15NM6AKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
на замовлення 1468 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+644.61 грн
50+495.34 грн
100+422.38 грн
500+365.72 грн
1000+365.56 грн
В кошику  од. на суму  грн.
IPF026N15NM6ATMA1 Infineon-IPF026N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907752f9db7046
IPF026N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 239A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+365.08 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPF026N15NM6ATMA1 Infineon-IPF026N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907752f9db7046
IPF026N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 239A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
на замовлення 1589 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+676.44 грн
10+533.45 грн
100+427.05 грн
500+381.75 грн
В кошику  од. на суму  грн.
IPB95R450PFD7ATMA1 Infineon-IPB95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb905600405
IPB95R450PFD7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
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IPB95R450PFD7ATMA1 Infineon-IPB95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb905600405
IPB95R450PFD7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
на замовлення 865 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+270.58 грн
10+170.59 грн
100+119.32 грн
500+91.42 грн
Мінімальне замовлення: 2
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IQFH36N04NM6ATMA1
IQFH36N04NM6ATMA1
Виробник: Infineon Technologies
Description: IQFH36N04NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc)
Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V
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IQFH36N04NM6ATMA1
IQFH36N04NM6ATMA1
Виробник: Infineon Technologies
Description: IQFH36N04NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc)
Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V
на замовлення 1476 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+385.97 грн
5+334.12 грн
10+320.02 грн
25+284.59 грн
50+273.80 грн
100+263.96 грн
500+240.11 грн
1000+232.84 грн
В кошику  од. на суму  грн.
TLE92623BQXV33XUMA2 Infineon-TLE9262-3BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc80160978ed9493954
TLE92623BQXV33XUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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TLE92623BQXXUMA2 Infineon-TLE9262-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609785aa013951
TLE92623BQXXUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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IPT017N10NM5LF2ATMA1 IPT017N10NM5LF2ATMA1.pdf
IPT017N10NM5LF2ATMA1
Виробник: Infineon Technologies
Description: IPT017N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+262.45 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT017N10NM5LF2ATMA1 IPT017N10NM5LF2ATMA1.pdf
IPT017N10NM5LF2ATMA1
Виробник: Infineon Technologies
Description: IPT017N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+608.00 грн
10+397.73 грн
100+291.87 грн
500+235.40 грн
В кошику  од. на суму  грн.
IR7304SPBF ir7304s.pdf?fileId=5546d462533600a4015355d62a63182e
IR7304SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 700 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
DigiKey Programmable: Not Verified
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CY9AFA41NAPMC-G-JNE2
CY9AFA41NAPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 96KB 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
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IRS2184PBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
IRS2184PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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CY7C1363C-133AXC Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY7C1363C-133AXC
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
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FF450R17ME4PBOSA1 Infineon-FF450R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e41ca75068e
FF450R17ME4PBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+15549.32 грн
В кошику  од. на суму  грн.
S26HL512TFPBHV010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHV010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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CY8C3445AXI-104T download
CY8C3445AXI-104T
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
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KITXMC71EVKLITEV1TOBO1 Infineon-KIT_XMC71_EVK_LITE_V1_XMC7100_Lite_Evaluation_Board_release_notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c7ec4575d0c6b
KITXMC71EVKLITEV1TOBO1
Виробник: Infineon Technologies
Description: XMC7100D EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M0+, Cortex®-M7
Utilized IC / Part: XMC7100D
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2568.87 грн
В кошику  од. на суму  грн.
EVALXMC4800PSOC6M5TOBO1 Infineon-UG-2023-07-EVAL-XMC4800PSOC6M5-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e12871028537c
EVALXMC4800PSOC6M5TOBO1
Виробник: Infineon Technologies
Description: XMC4800 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4800
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+20890.80 грн
В кошику  од. на суму  грн.
IQD009N06NM5SCATMA1 Infineon-IQD009N06NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b653e47149d2
IQD009N06NM5SCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
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IQD009N06NM5SCATMA1 Infineon-IQD009N06NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b653e47149d2
IQD009N06NM5SCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
на замовлення 4756 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+349.36 грн
10+259.79 грн
100+210.59 грн
500+171.33 грн
1000+153.69 грн
В кошику  од. на суму  грн.
IPA65R225C7XKSA1 Infineon-IPA65R225C7-DS-v02_00-en.pdf?fileId=db3a304343bec32d0143bf743f7c0c63
IPA65R225C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 419 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
251+91.62 грн
Мінімальне замовлення: 251
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CYT2B75DADQ0AZEGSHQLA1
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Tray
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IR21064PBF ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR21064PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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REFDR3KIMBGSIC2MATOBO1
REFDR3KIMBGSIC2MATOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1ED3122MC12H
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3122MC12H, IMBG120R040M2H
Primary Attributes: Isolated
Secondary Attributes: On-Board Test Points
Embedded: No
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S25FS128SAGBHM200 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS128SAGBHM200
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4149LDSS593XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4149LDSS593XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 384KB FLASH 48VFQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 40
на замовлення 2597 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+853.90 грн
10+643.80 грн
25+599.21 грн
80+522.60 грн
260+493.62 грн
520+480.56 грн
1040+462.11 грн
В кошику  од. на суму  грн.
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