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CY7C2270KV18-550BZXC CY7C2270KV18-550BZXC Infineon Technologies Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665 Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1565KV18-550BZXC CY7C1565KV18-550BZXC Infineon Technologies Infineon-CY7C1565KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe0b293135&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY14B256KA-SP25XIT CY14B256KA-SP25XIT Infineon Technologies Infineon-CY14B256KA_256-Kbit_(32_K_8)_nvSRAM_with_Real_Time_Clock-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd912f303f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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S25FL128LAGNFB013 S25FL128LAGNFB013 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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IRFP4868PBF IRFP4868PBF Infineon Technologies IRSDS19316-1.pdf?t.download=true&u=5oefqw Description: IRFP4868 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
133+216.14 грн
Мінімальне замовлення: 133
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T1040N20TOFVTXPSA1 Infineon Technologies T1040N.pdf Description: SCR MODULE 2.2KV 2200A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1040 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 2.2 kV
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D2450N07TXPSA1 D2450N07TXPSA1 Infineon Technologies Infineon-D2450N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a4b431538d Description: DIODE STANDARD 700V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 700 V
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6EDL04N065PRXUMA1 6EDL04N065PRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04N065PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+115.51 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
6EDL04N065PRXUMA1 6EDL04N065PRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04N065PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+185.81 грн
5+158.98 грн
10+151.85 грн
25+134.36 грн
50+128.84 грн
100+123.77 грн
500+111.71 грн
1000+107.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1EDI3035ASXUMA1 1EDI3035ASXUMA1 Infineon Technologies Infineon-1EDI3035AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019088695ff7250c Description: 1EDI3035ASXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+218.91 грн
2000+206.11 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1EDI3035ASXUMA1 1EDI3035ASXUMA1 Infineon Technologies Infineon-1EDI3035AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019088695ff7250c Description: 1EDI3035ASXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
на замовлення 2424 шт:
термін постачання 21-31 дні (днів)
1+397.11 грн
10+291.83 грн
25+269.15 грн
100+229.24 грн
250+218.10 грн
500+211.38 грн
В кошику  од. на суму  грн.
IDDD06G65C6XTMA1 Infineon Technologies Infineon-IDDD06G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f86ff8c0e09 Description: DIODE SIC 650V 18A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
на замовлення 543 шт:
термін постачання 21-31 дні (днів)
233+101.12 грн
Мінімальне замовлення: 233
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IDDD12G65C6XTMA1 IDDD12G65C6XTMA1 Infineon Technologies Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2 Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
на замовлення 5200 шт:
термін постачання 21-31 дні (днів)
121+195.96 грн
Мінімальне замовлення: 121
В кошику  од. на суму  грн.
AUIRF1010Z AUIRF1010Z Infineon Technologies auirf1010z.pdf?fileId=5546d462533600a4015355a89a4a1364 Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Qualification: AEC-Q101
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BC847CE6433HTMA1 BC847CE6433HTMA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
9276+2.12 грн
Мінімальне замовлення: 9276
В кошику  од. на суму  грн.
SIDC56D60E6X1SA1 Infineon Technologies SIDC56D60E6_L4223M.pdf?folderId=db3a304412b407950112b436e1b366f6&fileId=db3a304412b407950112b436e23366f7 Description: DIODE STD 600V 150A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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IQFH47N04NM6ATMA1 IQFH47N04NM6ATMA1 Infineon Technologies Infineon-IQFH47N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904de8dede050b Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+164.63 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IQFH47N04NM6ATMA1 IQFH47N04NM6ATMA1 Infineon Technologies Infineon-IQFH47N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904de8dede050b Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+421.77 грн
10+270.77 грн
100+194.12 грн
500+151.50 грн
1000+148.78 грн
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IGB110S10S1XTMA1 Infineon Technologies Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V
Power Dissipation (Max): 2.5W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
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AUIRLS3034 AUIRLS3034 Infineon Technologies AUIRLS3034.pdf Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
Qualification: AEC-Q101
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ISC800P06LMATMA1 ISC800P06LMATMA1 Infineon Technologies Infineon-ISC800P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4c89536f2 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
товару немає в наявності
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ISC800P06LMATMA1 ISC800P06LMATMA1 Infineon Technologies Infineon-ISC800P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4c89536f2 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
на замовлення 370 шт:
термін постачання 21-31 дні (днів)
3+117.57 грн
10+75.21 грн
100+51.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SAF-XE164H-96F66L AC SAF-XE164H-96F66L AC Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164K96F66LACFXUMA1 XE164K96F66LACFXUMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164K96F66LACFXQMA1 XE164K96F66LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XC228796F66LACKXUMA1 XC228796F66LACKXUMA1 Infineon Technologies Infineon-XC228X-DS-v02_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40937b40162&ack=t Description: IC MCU 16/32B 768KB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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XE164G96F66LACFXQMA1 XE164G96F66LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164H96F66LACFXQMA1 XE164H96F66LACFXQMA1 Infineon Technologies XE164_ds_v2.1_2008_08.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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CY9AF344LAQN-G-AVE2 CY9AF344LAQN-G-AVE2 Infineon Technologies Description: IC MCU 32BIT 288KB 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
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AUIRG4PC40S-E AUIRG4PC40S-E Infineon Technologies auirg4pc40s-e.pdf?fileId=5546d462533600a4015355ba2a1c1517 Description: IGBT 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/650ns
Switching Energy: 450µJ (on), 6.5mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 150 nC
Grade: Automotive
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 160 W
Qualification: AEC-Q101
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1EDI3025ASXUMA1 1EDI3025ASXUMA1 Infineon Technologies Infineon-1EDI3025AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190886944052487 Description: BTM9011EPXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
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1EDI3025ASXUMA1 1EDI3025ASXUMA1 Infineon Technologies Infineon-1EDI3025AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190886944052487 Description: BTM9011EPXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
на замовлення 424 шт:
термін постачання 21-31 дні (днів)
1+355.18 грн
10+260.08 грн
25+239.54 грн
100+203.63 грн
250+193.54 грн
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S26KL512SDABHB030 S26KL512SDABHB030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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4DIR0400HXUMA1 4DIR0400HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns (Typ)
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
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4DIR0400HXUMA1 4DIR0400HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns (Typ)
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
на замовлення 1426 шт:
термін постачання 21-31 дні (днів)
2+166.08 грн
10+115.04 грн
100+88.43 грн
500+71.99 грн
Мінімальне замовлення: 2
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AUIRF1018ES AUIRF1018ES Infineon Technologies auirf1018es.pdf?fileId=5546d462533600a4015355a8a2491368 Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Qualification: AEC-Q101
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IRSM836-015MA IRSM836-015MA Infineon Technologies irsm836-015ma.pdf?fileId=5546d462533600a40153567f22fc289a Description: IC HALF BRIDGE DRIVER 1A 36QFN
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 4.8Ohm
Applications: AC Motors
Current - Output / Channel: 1A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
на замовлення 736 шт:
термін постачання 21-31 дні (днів)
63+380.15 грн
Мінімальне замовлення: 63
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IRSM515-025DA IRSM515-025DA Infineon Technologies irsm505-025.pdf Description: IC HALF BRIDGE DRIVER 1.5A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 3Ohm
Applications: AC Motors
Current - Output / Channel: 1.5A
Current - Peak Output: 11A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
на замовлення 30390 шт:
термін постачання 21-31 дні (днів)
36+661.14 грн
Мінімальне замовлення: 36
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IRSM515-025DA IRSM515-025DA Infineon Technologies irsm505-025.pdf Description: IC HALF BRIDGE DRIVER 1.5A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 3Ohm
Applications: AC Motors
Current - Output / Channel: 1.5A
Current - Peak Output: 11A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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IGLD65R055D2AUMA1 IGLD65R055D2AUMA1 Infineon Technologies Infineon-IGLD65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a0cb8855803 Description: GANFET N-CH
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
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IGLD65R055D2AUMA1 IGLD65R055D2AUMA1 Infineon Technologies Infineon-IGLD65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a0cb8855803 Description: GANFET N-CH
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
на замовлення 2918 шт:
термін постачання 21-31 дні (днів)
1+478.50 грн
10+310.75 грн
100+229.12 грн
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C2DBYY001831 Infineon Technologies Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
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FP20R06W1E3B3BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1100 pF @ 25 V
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IMT40R045M2HXTMA1 IMT40R045M2HXTMA1 Infineon Technologies Infineon-IMT40R045M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c55f844d57 Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 8.9A, 18V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.2mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 200 V
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IMT40R045M2HXTMA1 IMT40R045M2HXTMA1 Infineon Technologies Infineon-IMT40R045M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c55f844d57 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 8.9A, 18V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.2mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 200 V
на замовлення 1890 шт:
термін постачання 21-31 дні (днів)
1+527.83 грн
10+345.66 грн
100+278.41 грн
500+239.36 грн
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IR38060MGM09TRP Infineon Technologies Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
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IR38060MGM10TRP Infineon Technologies Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
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IR38060MGM12TRP Infineon Technologies Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
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IR38060MGM18TRPXUMA1 Infineon Technologies Description: IC REG BUCK ADJ 6A 26PQFN
Packaging: Tape & Reel (TR)
Package / Case: 26-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 26-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
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IDK05G65C5XTMA1 IDK05G65C5XTMA1 Infineon Technologies Infineon-IDK05G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec794447014e Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
229+99.35 грн
Мінімальне замовлення: 229
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IDK05G65C5XTMA2 IDK05G65C5XTMA2 Infineon Technologies Infineon-IDK05G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec794447014e Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
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CY7C4215V-15ASXC CY7C4215V-15ASXC Infineon Technologies CY7C4xx5V_RevC.pdf Description: IC FIFO SYNC 512X18 11NS 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 9K (512 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
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CY7C421-10JXC CY7C421-10JXC Infineon Technologies CY7C419%2C21%2C25%2C29%2C33.pdf Description: IC FIFO ASYNC 512X9 10NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Asynchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 50MHz
Access Time: 10ns
Current - Supply (Max): 85mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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CY7C4211-15JXC CY7C4211-15JXC Infineon Technologies CY7C4xx1_RevC.pdf Description: IC FIFO SYNC 512X9 10NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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TLE4972EVALVERBARTOBO1 TLE4972EVALVERBARTOBO1 Infineon Technologies Description: TLE4972 EVAL VER BAR
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 3.1V ~ 3.3V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4972
Embedded: No
Sensing Range: 842A
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+75754.35 грн
В кошику  од. на суму  грн.
TLE4973EVALVERBARTOBO1 TLE4973EVALVERBARTOBO1 Infineon Technologies Description: TLE4973 EVAL VER BAR
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4973
Embedded: No
Sensing Range: 920A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+75754.35 грн
В кошику  од. на суму  грн.
D1821SH45TS05XOSA1 D1821SH45TS05XOSA1 Infineon Technologies Soft_Recovery_Freewheeling_Diodes-PB_v03_4-21-16.pdf Description: DIODE STD 4500V 1710A BGD10026K1
Packaging: Bulk
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1710A
Supplier Device Package: BG-D10026K-1
Voltage - DC Reverse (Vr) (Max): 4500 V
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EVALISSI20R02HTSTOBO1 EVALISSI20R02HTSTOBO1 Infineon Technologies Description: EVAL BOARD FOR ISSI20R02H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R02H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+13946.40 грн
В кошику  од. на суму  грн.
EVALISSI20R02HCSTOBO1 EVALISSI20R02HCSTOBO1 Infineon Technologies Infineon-EVAL-iSSI20R02HCS-UserManual-v01_00-EN.pdf?fileId=8ac78c8c901008d101903485f2631a7e Description: EVAL BOARD FOR ISSI20R02H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R02H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+13946.40 грн
В кошику  од. на суму  грн.
EVALISSI20R11HTOBO1 EVALISSI20R11HTOBO1 Infineon Technologies Description: EVAL BOARD FOR ISSI20R11H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R11H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+14068.90 грн
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CY7C2270KV18-550BZXC Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665
CY7C2270KV18-550BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1565KV18-550BZXC Infineon-CY7C1565KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe0b293135&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1565KV18-550BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY14B256KA-SP25XIT Infineon-CY14B256KA_256-Kbit_(32_K_8)_nvSRAM_with_Real_Time_Clock-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd912f303f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B256KA-SP25XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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S25FL128LAGNFB013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LAGNFB013
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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IRFP4868PBF IRSDS19316-1.pdf?t.download=true&u=5oefqw
IRFP4868PBF
Виробник: Infineon Technologies
Description: IRFP4868 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
133+216.14 грн
Мінімальне замовлення: 133
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T1040N20TOFVTXPSA1 T1040N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 2200A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1040 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 2.2 kV
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D2450N07TXPSA1 Infineon-D2450N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a4b431538d
D2450N07TXPSA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 700V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 700 V
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6EDL04N065PRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04N065PRXUMA1
Виробник: Infineon Technologies
Description: 6EDL04N065PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+115.51 грн
Мінімальне замовлення: 3000
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6EDL04N065PRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04N065PRXUMA1
Виробник: Infineon Technologies
Description: 6EDL04N065PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+185.81 грн
5+158.98 грн
10+151.85 грн
25+134.36 грн
50+128.84 грн
100+123.77 грн
500+111.71 грн
1000+107.97 грн
Мінімальне замовлення: 2
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1EDI3035ASXUMA1 Infineon-1EDI3035AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019088695ff7250c
1EDI3035ASXUMA1
Виробник: Infineon Technologies
Description: 1EDI3035ASXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+218.91 грн
2000+206.11 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1EDI3035ASXUMA1 Infineon-1EDI3035AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019088695ff7250c
1EDI3035ASXUMA1
Виробник: Infineon Technologies
Description: 1EDI3035ASXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
на замовлення 2424 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+397.11 грн
10+291.83 грн
25+269.15 грн
100+229.24 грн
250+218.10 грн
500+211.38 грн
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IDDD06G65C6XTMA1 Infineon-IDDD06G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f86ff8c0e09
Виробник: Infineon Technologies
Description: DIODE SIC 650V 18A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
на замовлення 543 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
233+101.12 грн
Мінімальне замовлення: 233
В кошику  од. на суму  грн.
IDDD12G65C6XTMA1 Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2
IDDD12G65C6XTMA1
Виробник: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
на замовлення 5200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
121+195.96 грн
Мінімальне замовлення: 121
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AUIRF1010Z auirf1010z.pdf?fileId=5546d462533600a4015355a89a4a1364
AUIRF1010Z
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Qualification: AEC-Q101
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BC847CE6433HTMA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC847CE6433HTMA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9276+2.12 грн
Мінімальне замовлення: 9276
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SIDC56D60E6X1SA1 SIDC56D60E6_L4223M.pdf?folderId=db3a304412b407950112b436e1b366f6&fileId=db3a304412b407950112b436e23366f7
Виробник: Infineon Technologies
Description: DIODE STD 600V 150A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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IQFH47N04NM6ATMA1 Infineon-IQFH47N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904de8dede050b
IQFH47N04NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+164.63 грн
Мінімальне замовлення: 3000
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IQFH47N04NM6ATMA1 Infineon-IQFH47N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904de8dede050b
IQFH47N04NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+421.77 грн
10+270.77 грн
100+194.12 грн
500+151.50 грн
1000+148.78 грн
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IGB110S10S1XTMA1
Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V
Power Dissipation (Max): 2.5W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
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AUIRLS3034 AUIRLS3034.pdf
AUIRLS3034
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
Qualification: AEC-Q101
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ISC800P06LMATMA1 Infineon-ISC800P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4c89536f2
ISC800P06LMATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
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ISC800P06LMATMA1 Infineon-ISC800P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4c89536f2
ISC800P06LMATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
на замовлення 370 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.57 грн
10+75.21 грн
100+51.33 грн
Мінімальне замовлення: 3
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SAF-XE164H-96F66L AC XE164_V2.1_Aug2008.pdf
SAF-XE164H-96F66L AC
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164K96F66LACFXUMA1 XE164_V2.1_Aug2008.pdf
XE164K96F66LACFXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164K96F66LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164K96F66LACFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XC228796F66LACKXUMA1 Infineon-XC228X-DS-v02_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40937b40162&ack=t
XC228796F66LACKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 768KB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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XE164G96F66LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164G96F66LACFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE164H96F66LACFXQMA1 XE164_ds_v2.1_2008_08.pdf
XE164H96F66LACFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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CY9AF344LAQN-G-AVE2
CY9AF344LAQN-G-AVE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
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AUIRG4PC40S-E auirg4pc40s-e.pdf?fileId=5546d462533600a4015355ba2a1c1517
AUIRG4PC40S-E
Виробник: Infineon Technologies
Description: IGBT 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/650ns
Switching Energy: 450µJ (on), 6.5mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 150 nC
Grade: Automotive
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 160 W
Qualification: AEC-Q101
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1EDI3025ASXUMA1 Infineon-1EDI3025AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190886944052487
1EDI3025ASXUMA1
Виробник: Infineon Technologies
Description: BTM9011EPXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
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1EDI3025ASXUMA1 Infineon-1EDI3025AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190886944052487
1EDI3025ASXUMA1
Виробник: Infineon Technologies
Description: BTM9011EPXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
на замовлення 424 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+355.18 грн
10+260.08 грн
25+239.54 грн
100+203.63 грн
250+193.54 грн
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S26KL512SDABHB030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KL512SDABHB030
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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4DIR0400HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
4DIR0400HXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns (Typ)
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
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4DIR0400HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
4DIR0400HXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns (Typ)
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
на замовлення 1426 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+166.08 грн
10+115.04 грн
100+88.43 грн
500+71.99 грн
Мінімальне замовлення: 2
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AUIRF1018ES auirf1018es.pdf?fileId=5546d462533600a4015355a8a2491368
AUIRF1018ES
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Qualification: AEC-Q101
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IRSM836-015MA irsm836-015ma.pdf?fileId=5546d462533600a40153567f22fc289a
IRSM836-015MA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1A 36QFN
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 4.8Ohm
Applications: AC Motors
Current - Output / Channel: 1A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
на замовлення 736 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
63+380.15 грн
Мінімальне замовлення: 63
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IRSM515-025DA irsm505-025.pdf
IRSM515-025DA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.5A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 3Ohm
Applications: AC Motors
Current - Output / Channel: 1.5A
Current - Peak Output: 11A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
на замовлення 30390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
36+661.14 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
IRSM515-025DA irsm505-025.pdf
IRSM515-025DA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.5A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 3Ohm
Applications: AC Motors
Current - Output / Channel: 1.5A
Current - Peak Output: 11A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
товару немає в наявності
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IGLD65R055D2AUMA1 Infineon-IGLD65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a0cb8855803
IGLD65R055D2AUMA1
Виробник: Infineon Technologies
Description: GANFET N-CH
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
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IGLD65R055D2AUMA1 Infineon-IGLD65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a0cb8855803
IGLD65R055D2AUMA1
Виробник: Infineon Technologies
Description: GANFET N-CH
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
на замовлення 2918 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+478.50 грн
10+310.75 грн
100+229.12 грн
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C2DBYY001831
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
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FP20R06W1E3B3BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1100 pF @ 25 V
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IMT40R045M2HXTMA1 Infineon-IMT40R045M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c55f844d57
IMT40R045M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 8.9A, 18V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.2mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 200 V
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IMT40R045M2HXTMA1 Infineon-IMT40R045M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c55f844d57
IMT40R045M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 8.9A, 18V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.2mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 200 V
на замовлення 1890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+527.83 грн
10+345.66 грн
100+278.41 грн
500+239.36 грн
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IR38060MGM09TRP Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee
Виробник: Infineon Technologies
Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
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IR38060MGM10TRP Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee
Виробник: Infineon Technologies
Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
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IR38060MGM12TRP Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee
Виробник: Infineon Technologies
Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
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IR38060MGM18TRPXUMA1
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 6A 26PQFN
Packaging: Tape & Reel (TR)
Package / Case: 26-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 26-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
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IDK05G65C5XTMA1 Infineon-IDK05G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec794447014e
IDK05G65C5XTMA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
229+99.35 грн
Мінімальне замовлення: 229
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IDK05G65C5XTMA2 Infineon-IDK05G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec794447014e
IDK05G65C5XTMA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
товару немає в наявності
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CY7C4215V-15ASXC CY7C4xx5V_RevC.pdf
CY7C4215V-15ASXC
Виробник: Infineon Technologies
Description: IC FIFO SYNC 512X18 11NS 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 9K (512 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
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CY7C421-10JXC CY7C419%2C21%2C25%2C29%2C33.pdf
CY7C421-10JXC
Виробник: Infineon Technologies
Description: IC FIFO ASYNC 512X9 10NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Asynchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 50MHz
Access Time: 10ns
Current - Supply (Max): 85mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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CY7C4211-15JXC CY7C4xx1_RevC.pdf
CY7C4211-15JXC
Виробник: Infineon Technologies
Description: IC FIFO SYNC 512X9 10NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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TLE4972EVALVERBARTOBO1
TLE4972EVALVERBARTOBO1
Виробник: Infineon Technologies
Description: TLE4972 EVAL VER BAR
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 3.1V ~ 3.3V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4972
Embedded: No
Sensing Range: 842A
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+75754.35 грн
В кошику  од. на суму  грн.
TLE4973EVALVERBARTOBO1
TLE4973EVALVERBARTOBO1
Виробник: Infineon Technologies
Description: TLE4973 EVAL VER BAR
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4973
Embedded: No
Sensing Range: 920A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+75754.35 грн
В кошику  од. на суму  грн.
D1821SH45TS05XOSA1 Soft_Recovery_Freewheeling_Diodes-PB_v03_4-21-16.pdf
D1821SH45TS05XOSA1
Виробник: Infineon Technologies
Description: DIODE STD 4500V 1710A BGD10026K1
Packaging: Bulk
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1710A
Supplier Device Package: BG-D10026K-1
Voltage - DC Reverse (Vr) (Max): 4500 V
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EVALISSI20R02HTSTOBO1
EVALISSI20R02HTSTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R02H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R02H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13946.40 грн
В кошику  од. на суму  грн.
EVALISSI20R02HCSTOBO1 Infineon-EVAL-iSSI20R02HCS-UserManual-v01_00-EN.pdf?fileId=8ac78c8c901008d101903485f2631a7e
EVALISSI20R02HCSTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R02H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R02H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13946.40 грн
В кошику  од. на суму  грн.
EVALISSI20R11HTOBO1
EVALISSI20R11HTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R11H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R11H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+14068.90 грн
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