Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119485) > Сторінка 760 з 1992

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BC 847BF E6327 BC 847BF E6327 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-TSFP-3-1
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-TSFP-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BAS 70-02W E6327 BAS 70-02W E6327 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SCD-80
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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BSC159N10LSFGATMA1 BSC159N10LSFGATMA1 Infineon Technologies BSC159N10LSF+Rev2.07.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b499f85d47b36 Description: MOSFET N-CH 100V 9.4A/63A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 15.9mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
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CYT3DLBBCBQ1BZSGS CYT3DLBBCBQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT3DL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 240MHz
Program Memory Size: 4.06MB (4.06M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 135
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TLE493DW3B6B0HTSA1 TLE493DW3B6B0HTSA1 Infineon Technologies Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75 Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1420 шт:
термін постачання 21-31 дні (днів)
3+124.39 грн
5+106.07 грн
10+101.10 грн
25+89.25 грн
50+85.42 грн
100+81.91 грн
500+73.64 грн
1000+71.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A1HTSA1 TLE493DP3B6A1HTSA1 Infineon Technologies Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2955 шт:
термін постачання 21-31 дні (днів)
3+133.78 грн
5+114.51 грн
10+109.16 грн
25+96.41 грн
50+92.29 грн
100+88.54 грн
500+79.67 грн
1000+76.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A2HTSA1 TLE493DP3B6A2HTSA1 Infineon Technologies Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
3+133.78 грн
5+114.51 грн
10+109.16 грн
25+96.41 грн
50+92.29 грн
100+88.54 грн
500+79.67 грн
1000+76.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A3HTSA1 TLE493DP3B6A3HTSA1 Infineon Technologies Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2981 шт:
термін постачання 21-31 дні (днів)
3+133.78 грн
5+114.51 грн
10+109.16 грн
25+96.41 грн
50+92.29 грн
100+88.54 грн
500+79.67 грн
1000+76.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A0HTSA1 TLE493DP3B6A0HTSA1 Infineon Technologies Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb Description: SEN HALL EFFECT I2C TSOT-23-6
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2719 шт:
термін постачання 21-31 дні (днів)
3+133.78 грн
5+114.51 грн
10+109.16 грн
25+96.41 грн
50+92.29 грн
100+88.54 грн
500+79.67 грн
1000+76.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TZ810N22KOFTIMHPSA1 TZ810N22KOFTIMHPSA1 Infineon Technologies Infineon-TZ810N22KOF-DS-v03_02-EN.pdf?fileId=5546d461464245d30146669314a860eb Description: SCR MODULE 2.2KV 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.2 kV
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OPTIGATRUSTMV3S2GOTOBO1 OPTIGATRUSTMV3S2GOTOBO1 Infineon Technologies Description: S2GO SECURITY OPTIGA M
Packaging: Bulk
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust M
Platform: Shield2Go
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+585.18 грн
В кошику  од. на суму  грн.
FF600R12IP4B60BPSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
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FF600R12IP4PB60BPSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
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CY5117-1X07I Infineon Technologies Description: INFINEON
Packaging: Bulk
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CY95F563KNPFT-G-UNE2 CY95F563KNPFT-G-UNE2 Infineon Technologies Description: IC MCU 8BIT 12KB 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 15
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TDA22560XUMA1 Infineon Technologies Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
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TDA22560XUMA1 Infineon Technologies Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
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TDA22594AXUMA1 Infineon Technologies Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
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TC387QP160F300SAEKXUMA2 TC387QP160F300SAEKXUMA2 Infineon Technologies Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b Description: IC MCU 32BIT 10MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
на замовлення 1569 шт:
термін постачання 21-31 дні (днів)
1+3502.50 грн
10+2768.97 грн
25+2618.19 грн
100+2381.83 грн
В кошику  од. на суму  грн.
TC389QP160F300SAEKXUMA2 TC389QP160F300SAEKXUMA2 Infineon Technologies Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b Description: IC MCU 32BIT 10MB FLASH 516FBGA
Packaging: Cut Tape (CT)
Package / Case: 516-FBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-FBGA-516-1
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CY7C4225V-15ASC CY7C4225V-15ASC Infineon Technologies CY7C4205V%2C15V%2C25V%2C35V%2C45V%2C4425V.pdf Description: IC FIFO SYNC 1KX18 11NS 64TQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 18K (1K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (10x10)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
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CY62157G30-45BVXIT CY62157G30-45BVXIT Infineon Technologies download Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+379.82 грн
Мінімальне замовлення: 2000
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CY62157G30-45BVXIT CY62157G30-45BVXIT Infineon Technologies download Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+430.28 грн
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CY62167G30-45ZXIT CY62167G30-45ZXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167G30-45ZXIT CY62167G30-45ZXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 740 шт:
термін постачання 21-31 дні (днів)
1+1024.07 грн
10+915.10 грн
25+886.73 грн
50+812.06 грн
100+792.12 грн
250+766.09 грн
500+734.50 грн
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AUIRFS4115-7P Infineon Technologies INFN-S-A0002296895-1.pdf?t.download=true&u=5oefqw Description: AUIRFS4115 - 120V-300V N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
на замовлення 35170 шт:
термін постачання 21-31 дні (днів)
101+199.66 грн
Мінімальне замовлення: 101
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AUIRFS4115-7P AUIRFS4115-7P Infineon Technologies auirfs4115-7p.pdf?fileId=5546d462533600a4015355b6c64614cb Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
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2EDL8034F5BXUMA1 2EDL8034F5BXUMA1 Infineon Technologies 448_2EDL803_Datasheet.pdf Description: 2EDL8034F5BXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.4ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+47.63 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
2EDL8034F5BXUMA1 2EDL8034F5BXUMA1 Infineon Technologies 448_2EDL803_Datasheet.pdf Description: 2EDL8034F5BXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.4ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
на замовлення 2741 шт:
термін постачання 21-31 дні (днів)
4+97.01 грн
10+67.95 грн
25+61.56 грн
100+51.24 грн
250+48.11 грн
500+46.23 грн
1000+44.89 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY7C1370KV33-167AXIT CY7C1370KV33-167AXIT Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370KV33-167AXIT CY7C1370KV33-167AXIT Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 580 шт:
термін постачання 21-31 дні (днів)
1+2156.89 грн
10+1921.21 грн
25+1859.62 грн
50+1701.88 грн
100+1693.39 грн
В кошику  од. на суму  грн.
CYUSB3314-88LTXIT CYUSB3314-88LTXIT Infineon Technologies Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB 3.0 HUB 4-PORT 88QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
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CYUSB3314-88LTXIT CYUSB3314-88LTXIT Infineon Technologies Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB 3.0 HUB 4-PORT 88QFN
Packaging: Cut Tape (CT)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
1+485.05 грн
10+359.80 грн
25+333.16 грн
100+285.11 грн
250+276.72 грн
В кошику  од. на суму  грн.
F411MR12W3M1HB11BPSA1 Infineon Technologies Infineon-F4-11MR12W3M1H_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c95d1335f0195f5dfc49e2203 Description: F411MR12W3M1HB11BPSA1
Packaging: Tray
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+9548.37 грн
В кошику  од. на суму  грн.
BF776H6327XTSA1 BF776H6327XTSA1 Infineon Technologies BF776.pdf Description: RF TRANS NPN 4.7V 46GHZ SOT-343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
на замовлення 32680 шт:
термін постачання 21-31 дні (днів)
1229+16.22 грн
Мінімальне замовлення: 1229
В кошику  од. на суму  грн.
IPA50R250CPXKSA1 IPA50R250CPXKSA1 Infineon Technologies IPA50R250CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cd97047bc Description: MOSFET N-CH 500V 13A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
на замовлення 2539 шт:
термін постачання 21-31 дні (днів)
170+118.92 грн
Мінімальне замовлення: 170
В кошику  од. на суму  грн.
ND89N12KHPSA1 ND89N12KHPSA1 Infineon Technologies INFNS29284-1.pdf?t.download=true&u=5oefqw Description: DIODE STANDARD 1200V 89A BGPB201
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 89A
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
1+7123.14 грн
15+5749.47 грн
В кошику  од. на суму  грн.
2EDL8033F5BXUMA1 2EDL8033F5BXUMA1 Infineon Technologies 448_2EDL803_Datasheet.pdf Description: 2EDL8033F5BXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.6ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 3A, 6A
товару немає в наявності
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2EDL8033F5BXUMA1 2EDL8033F5BXUMA1 Infineon Technologies 448_2EDL803_Datasheet.pdf Description: 2EDL8033F5BXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.6ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 3A, 6A
на замовлення 2455 шт:
термін постачання 21-31 дні (днів)
4+81.36 грн
10+57.03 грн
25+51.68 грн
100+42.88 грн
250+40.22 грн
500+38.61 грн
1000+36.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUTN06S5N008TATMA1 IAUTN06S5N008TATMA1 Infineon Technologies Infineon-IAUTN06S5N008T-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb347018631414d0a0df7 Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 358W (Tc)
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 136A (Ta), 350A (Tj)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3V @ 275µA
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+202.50 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IAUTN06S5N008TATMA1 IAUTN06S5N008TATMA1 Infineon Technologies Infineon-IAUTN06S5N008T-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb347018631414d0a0df7 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 358W (Tc)
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 136A (Ta), 350A (Tj)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3V @ 275µA
на замовлення 1958 шт:
термін постачання 21-31 дні (днів)
1+520.25 грн
10+339.24 грн
100+247.50 грн
500+224.00 грн
В кошику  од. на суму  грн.
BGA5H1BN6E6328XTSA1 BGA5H1BN6E6328XTSA1 Infineon Technologies Description: RF MMIC SUB 3 GHZ
Packaging: Tray
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 9.8mA
Noise Figure: 0.7dB
P1dB: -16dBm
Test Frequency: 2.5GHz
Supplier Device Package: PG-TSNP-6-10
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ISA150233C03LMDSXTMA ISA150233C03LMDSXTMA Infineon Technologies Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5 Description: ISA150233C03LMDSXTMA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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ISA150233C03LMDSXTMA ISA150233C03LMDSXTMA Infineon Technologies Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5 Description: ISA150233C03LMDSXTMA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 479 шт:
термін постачання 21-31 дні (днів)
3+118.13 грн
10+71.95 грн
100+48.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISA150233C03LMDSXTMA1 ISA150233C03LMDSXTMA1 Infineon Technologies Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
товару немає в наявності
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AUIRF1324STRL AUIRF1324STRL Infineon Technologies INFN-S-A0002297093-1.pdf?t.download=true&u=5oefqw Description: AUIRF1324 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
97+208.71 грн
Мінімальне замовлення: 97
В кошику  од. на суму  грн.
TC387TP128F300SAEKXUMA2 TC387TP128F300SAEKXUMA2 Infineon Technologies Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b Description: IC MCU
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
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TC387TP128F300SAEKXUMA2 TC387TP128F300SAEKXUMA2 Infineon Technologies Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b Description: IC MCU
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
на замовлення 999 шт:
термін постачання 21-31 дні (днів)
1+3367.94 грн
10+2662.52 грн
25+2517.51 грн
100+2213.03 грн
250+2141.75 грн
В кошику  од. на суму  грн.
TC399XX256F300SBDLXUMA1 TC399XX256F300SBDLXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
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TC399XP256F300SBDLXUMA1 TC399XP256F300SBDLXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
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TC397XP256F300SBDKXUMA1 TC397XP256F300SBDKXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
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TC397XX256F300SBDKXUMA1 TC397XX256F300SBDKXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
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BCM88359CUBGT Infineon Technologies Description: 802.11AC HT80 RSDB + BT4.1 INDUS
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
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IRF60B217 IRF60B217 Infineon Technologies irf60b217 Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
на замовлення 645 шт:
термін постачання 21-31 дні (днів)
269+75.41 грн
Мінімальне замовлення: 269
В кошику  од. на суму  грн.
IRF60B217 IRF60B217 Infineon Technologies irf60b217 Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
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BSS131IXUSA1 BSS131IXUSA1 Infineon Technologies 448_BSS131I.pdf Description: BSS131IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
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BSS131IXUSA1 BSS131IXUSA1 Infineon Technologies 448_BSS131I.pdf Description: BSS131IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
15+21.91 грн
24+13.03 грн
100+8.17 грн
500+5.68 грн
1000+5.03 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BSS83IXUSA1 BSS83IXUSA1 Infineon Technologies 448_BSS83I.pdf Description: BSS83IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
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BSS83IXUSA1 BSS83IXUSA1 Infineon Technologies 448_BSS83I.pdf Description: BSS83IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
на замовлення 2964 шт:
термін постачання 21-31 дні (днів)
15+21.12 грн
25+12.20 грн
100+7.63 грн
500+5.29 грн
1000+4.68 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
XE164F96F80LACFXQMA1 XE164F96F80LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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BC 847BF E6327 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC 847BF E6327
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-TSFP-3-1
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-TSFP-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BAS 70-02W E6327 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS 70-02W E6327
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SCD-80
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товару немає в наявності
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BSC159N10LSFGATMA1 BSC159N10LSF+Rev2.07.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b499f85d47b36
BSC159N10LSFGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9.4A/63A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 15.9mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
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CYT3DLBBCBQ1BZSGS Infineon-TRAVEO_T2G_CYT3DL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3
CYT3DLBBCBQ1BZSGS
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 240MHz
Program Memory Size: 4.06MB (4.06M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 135
товару немає в наявності
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TLE493DW3B6B0HTSA1 Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75
TLE493DW3B6B0HTSA1
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1420 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.39 грн
5+106.07 грн
10+101.10 грн
25+89.25 грн
50+85.42 грн
100+81.91 грн
500+73.64 грн
1000+71.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A1HTSA1 Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb
TLE493DP3B6A1HTSA1
Виробник: Infineon Technologies
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.78 грн
5+114.51 грн
10+109.16 грн
25+96.41 грн
50+92.29 грн
100+88.54 грн
500+79.67 грн
1000+76.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A2HTSA1 Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb
TLE493DP3B6A2HTSA1
Виробник: Infineon Technologies
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.78 грн
5+114.51 грн
10+109.16 грн
25+96.41 грн
50+92.29 грн
100+88.54 грн
500+79.67 грн
1000+76.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A3HTSA1 Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb
TLE493DP3B6A3HTSA1
Виробник: Infineon Technologies
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2981 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.78 грн
5+114.51 грн
10+109.16 грн
25+96.41 грн
50+92.29 грн
100+88.54 грн
500+79.67 грн
1000+76.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A0HTSA1 Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb
TLE493DP3B6A0HTSA1
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C TSOT-23-6
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2719 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.78 грн
5+114.51 грн
10+109.16 грн
25+96.41 грн
50+92.29 грн
100+88.54 грн
500+79.67 грн
1000+76.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TZ810N22KOFTIMHPSA1 Infineon-TZ810N22KOF-DS-v03_02-EN.pdf?fileId=5546d461464245d30146669314a860eb
TZ810N22KOFTIMHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.2 kV
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OPTIGATRUSTMV3S2GOTOBO1
OPTIGATRUSTMV3S2GOTOBO1
Виробник: Infineon Technologies
Description: S2GO SECURITY OPTIGA M
Packaging: Bulk
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust M
Platform: Shield2Go
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+585.18 грн
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FF600R12IP4B60BPSA1
Виробник: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
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FF600R12IP4PB60BPSA1
Виробник: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
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CY5117-1X07I
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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CY95F563KNPFT-G-UNE2
CY95F563KNPFT-G-UNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 12KB 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 15
товару немає в наявності
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TDA22560XUMA1
Виробник: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
товару немає в наявності
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TDA22560XUMA1
Виробник: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
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TDA22594AXUMA1
Виробник: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
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TC387QP160F300SAEKXUMA2 Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b
TC387QP160F300SAEKXUMA2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 10MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
на замовлення 1569 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3502.50 грн
10+2768.97 грн
25+2618.19 грн
100+2381.83 грн
В кошику  од. на суму  грн.
TC389QP160F300SAEKXUMA2 Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b
TC389QP160F300SAEKXUMA2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 10MB FLASH 516FBGA
Packaging: Cut Tape (CT)
Package / Case: 516-FBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-FBGA-516-1
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CY7C4225V-15ASC CY7C4205V%2C15V%2C25V%2C35V%2C45V%2C4425V.pdf
CY7C4225V-15ASC
Виробник: Infineon Technologies
Description: IC FIFO SYNC 1KX18 11NS 64TQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 18K (1K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (10x10)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
товару немає в наявності
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CY62157G30-45BVXIT download
CY62157G30-45BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+379.82 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
CY62157G30-45BVXIT download
CY62157G30-45BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+430.28 грн
В кошику  од. на суму  грн.
CY62167G30-45ZXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G30-45ZXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167G30-45ZXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G30-45ZXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 740 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1024.07 грн
10+915.10 грн
25+886.73 грн
50+812.06 грн
100+792.12 грн
250+766.09 грн
500+734.50 грн
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AUIRFS4115-7P INFN-S-A0002296895-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: AUIRFS4115 - 120V-300V N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
на замовлення 35170 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
101+199.66 грн
Мінімальне замовлення: 101
В кошику  од. на суму  грн.
AUIRFS4115-7P auirfs4115-7p.pdf?fileId=5546d462533600a4015355b6c64614cb
AUIRFS4115-7P
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
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2EDL8034F5BXUMA1 448_2EDL803_Datasheet.pdf
2EDL8034F5BXUMA1
Виробник: Infineon Technologies
Description: 2EDL8034F5BXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.4ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+47.63 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
2EDL8034F5BXUMA1 448_2EDL803_Datasheet.pdf
2EDL8034F5BXUMA1
Виробник: Infineon Technologies
Description: 2EDL8034F5BXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.4ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
на замовлення 2741 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.01 грн
10+67.95 грн
25+61.56 грн
100+51.24 грн
250+48.11 грн
500+46.23 грн
1000+44.89 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY7C1370KV33-167AXIT Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1370KV33-167AXIT
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1370KV33-167AXIT Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1370KV33-167AXIT
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 580 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2156.89 грн
10+1921.21 грн
25+1859.62 грн
50+1701.88 грн
100+1693.39 грн
В кошику  од. на суму  грн.
CYUSB3314-88LTXIT Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYUSB3314-88LTXIT
Виробник: Infineon Technologies
Description: IC USB 3.0 HUB 4-PORT 88QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
товару немає в наявності
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CYUSB3314-88LTXIT Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYUSB3314-88LTXIT
Виробник: Infineon Technologies
Description: IC USB 3.0 HUB 4-PORT 88QFN
Packaging: Cut Tape (CT)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+485.05 грн
10+359.80 грн
25+333.16 грн
100+285.11 грн
250+276.72 грн
В кошику  од. на суму  грн.
F411MR12W3M1HB11BPSA1 Infineon-F4-11MR12W3M1H_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c95d1335f0195f5dfc49e2203
Виробник: Infineon Technologies
Description: F411MR12W3M1HB11BPSA1
Packaging: Tray
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9548.37 грн
В кошику  од. на суму  грн.
BF776H6327XTSA1 BF776.pdf
BF776H6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 46GHZ SOT-343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
на замовлення 32680 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1229+16.22 грн
Мінімальне замовлення: 1229
В кошику  од. на суму  грн.
IPA50R250CPXKSA1 IPA50R250CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cd97047bc
IPA50R250CPXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
на замовлення 2539 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
170+118.92 грн
Мінімальне замовлення: 170
В кошику  од. на суму  грн.
ND89N12KHPSA1 INFNS29284-1.pdf?t.download=true&u=5oefqw
ND89N12KHPSA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 1200V 89A BGPB201
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 89A
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7123.14 грн
15+5749.47 грн
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2EDL8033F5BXUMA1 448_2EDL803_Datasheet.pdf
2EDL8033F5BXUMA1
Виробник: Infineon Technologies
Description: 2EDL8033F5BXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.6ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 3A, 6A
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2EDL8033F5BXUMA1 448_2EDL803_Datasheet.pdf
2EDL8033F5BXUMA1
Виробник: Infineon Technologies
Description: 2EDL8033F5BXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.6ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 3A, 6A
на замовлення 2455 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+81.36 грн
10+57.03 грн
25+51.68 грн
100+42.88 грн
250+40.22 грн
500+38.61 грн
1000+36.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUTN06S5N008TATMA1 Infineon-IAUTN06S5N008T-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb347018631414d0a0df7
IAUTN06S5N008TATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 358W (Tc)
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 136A (Ta), 350A (Tj)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3V @ 275µA
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+202.50 грн
Мінімальне замовлення: 1800
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IAUTN06S5N008TATMA1 Infineon-IAUTN06S5N008T-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb347018631414d0a0df7
IAUTN06S5N008TATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 358W (Tc)
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 136A (Ta), 350A (Tj)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3V @ 275µA
на замовлення 1958 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+520.25 грн
10+339.24 грн
100+247.50 грн
500+224.00 грн
В кошику  од. на суму  грн.
BGA5H1BN6E6328XTSA1
BGA5H1BN6E6328XTSA1
Виробник: Infineon Technologies
Description: RF MMIC SUB 3 GHZ
Packaging: Tray
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 9.8mA
Noise Figure: 0.7dB
P1dB: -16dBm
Test Frequency: 2.5GHz
Supplier Device Package: PG-TSNP-6-10
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ISA150233C03LMDSXTMA Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5
ISA150233C03LMDSXTMA
Виробник: Infineon Technologies
Description: ISA150233C03LMDSXTMA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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ISA150233C03LMDSXTMA Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5
ISA150233C03LMDSXTMA
Виробник: Infineon Technologies
Description: ISA150233C03LMDSXTMA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 479 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+118.13 грн
10+71.95 грн
100+48.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISA150233C03LMDSXTMA1 Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5
ISA150233C03LMDSXTMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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AUIRF1324STRL INFN-S-A0002297093-1.pdf?t.download=true&u=5oefqw
AUIRF1324STRL
Виробник: Infineon Technologies
Description: AUIRF1324 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
97+208.71 грн
Мінімальне замовлення: 97
В кошику  од. на суму  грн.
TC387TP128F300SAEKXUMA2 Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b
TC387TP128F300SAEKXUMA2
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
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TC387TP128F300SAEKXUMA2 Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b
TC387TP128F300SAEKXUMA2
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
на замовлення 999 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3367.94 грн
10+2662.52 грн
25+2517.51 грн
100+2213.03 грн
250+2141.75 грн
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TC399XX256F300SBDLXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC399XX256F300SBDLXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
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TC399XP256F300SBDLXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC399XP256F300SBDLXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
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TC397XP256F300SBDKXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XP256F300SBDKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
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TC397XX256F300SBDKXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XX256F300SBDKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
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BCM88359CUBGT
Виробник: Infineon Technologies
Description: 802.11AC HT80 RSDB + BT4.1 INDUS
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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IRF60B217 irf60b217
IRF60B217
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
на замовлення 645 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
269+75.41 грн
Мінімальне замовлення: 269
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IRF60B217 irf60b217
IRF60B217
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
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BSS131IXUSA1 448_BSS131I.pdf
BSS131IXUSA1
Виробник: Infineon Technologies
Description: BSS131IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
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BSS131IXUSA1 448_BSS131I.pdf
BSS131IXUSA1
Виробник: Infineon Technologies
Description: BSS131IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+21.91 грн
24+13.03 грн
100+8.17 грн
500+5.68 грн
1000+5.03 грн
Мінімальне замовлення: 15
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BSS83IXUSA1 448_BSS83I.pdf
BSS83IXUSA1
Виробник: Infineon Technologies
Description: BSS83IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
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BSS83IXUSA1 448_BSS83I.pdf
BSS83IXUSA1
Виробник: Infineon Technologies
Description: BSS83IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
на замовлення 2964 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+21.12 грн
25+12.20 грн
100+7.63 грн
500+5.29 грн
1000+4.68 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
XE164F96F80LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164F96F80LACFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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