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IR3513ZMTRPBF IR3513ZMTRPBF Infineon Technologies IR3513.pdf Description: IC CTRL XPHASE3 POL 32-MLPQ
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 32-MLPQ (5x5)
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
100+230.07 грн
Мінімальне замовлення: 100
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IR3505ZMTRPBF IR3505ZMTRPBF Infineon Technologies IR3505Z.pdf Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 16-MLPQ (3x3)
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IR3505ZMTRPBF IR3505ZMTRPBF Infineon Technologies IR3505Z.pdf Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 16-MLPQ (3x3)
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IR3505ZMTRPBF IR3505ZMTRPBF Infineon Technologies IR3505Z.pdf Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Packaging: Bulk
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 16-MLPQ (3x3)
на замовлення 1324 шт:
термін постачання 21-31 дні (днів)
136+169.13 грн
Мінімальне замовлення: 136
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IR3508ZMTRPBF IR3508ZMTRPBF Infineon Technologies IR3508Z.pdf Description: IC CTRL XPHASE3 20-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 28V
Applications: Processor
Current - Supply: 4mA
Supplier Device Package: 20-MLPQ (4x4)
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IR3508ZMTRPBF IR3508ZMTRPBF Infineon Technologies IR3508Z.pdf Description: IC CTRL XPHASE3 20-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 28V
Applications: Processor
Current - Supply: 4mA
Supplier Device Package: 20-MLPQ (4x4)
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IR3500VMTRPBF IR3500VMTRPBF Infineon Technologies IR3500V.pdf Description: IC XPHASE3 CTLR VR11.1 32-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 6.5mA
Supplier Device Package: 32-MLPQ (5x5)
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IR3500VMTRPBF IR3500VMTRPBF Infineon Technologies IR3500V.pdf Description: IC XPHASE3 CTLR VR11.1 32-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 6.5mA
Supplier Device Package: 32-MLPQ (5x5)
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IPQC60T010S7AXTMA1 IPQC60T010S7AXTMA1 Infineon Technologies Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Qualification: AEC-Q101
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IPQC60T010S7AXTMA1 IPQC60T010S7AXTMA1 Infineon Technologies Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Qualification: AEC-Q101
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TLE493DP3XXMS2GOTOBO1 TLE493DP3XXMS2GOTOBO1 Infineon Technologies Description: TLE493DP3XXMS2GOTOBO1
Packaging: Box
Interface: I2C, SPI
Sensor Type: Magnetic, Hall Effect
Utilized IC / Part: TLE493D-P3B6, TLE493D-P3I8
Embedded: Yes, MCU
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+4181.98 грн
5+3642.85 грн
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TLE493DP3I8XTMA1 Infineon Technologies Description: TLE493DP3I8XTMA1
Packaging: Tape & Reel (TR)
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TLE493DP3I8XTMA1 Infineon Technologies Description: TLE493DP3I8XTMA1
Packaging: Cut Tape (CT)
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TLE493DW3B6B0HTSA1 Infineon Technologies Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
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TLE493DW3B6B2HTSA1 Infineon Technologies Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
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TLE493DW3B6B3HTSA1 Infineon Technologies Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
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TLE493DW3B6B1HTSA1 Infineon Technologies Description: POSITION SENS ATV
Packaging: Tray
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TLE493DP3B6A0HTSA1 Infineon Technologies Description: POSITION SENS ATV
Packaging: Tray
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TLE493DP3B6A3HTSA1 Infineon Technologies Description: POSITION SENS ATV
Packaging: Tray
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TLE493DP3B6A1HTSA1 Infineon Technologies Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
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TLE493DP3B6A2HTSA1 Infineon Technologies Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
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ISC052N03LF2SATMA1 ISC052N03LF2SATMA1 Infineon Technologies Description: ISC052N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
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ISC052N03LF2SATMA1 ISC052N03LF2SATMA1 Infineon Technologies Description: ISC052N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
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ISC033N03LF2SATMA1 ISC033N03LF2SATMA1 Infineon Technologies Description: ISC033N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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ISC033N03LF2SATMA1 ISC033N03LF2SATMA1 Infineon Technologies Description: ISC033N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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ISC028N03LF2SATMA1 ISC028N03LF2SATMA1 Infineon Technologies Description: ISC028N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
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ISC028N03LF2SATMA1 ISC028N03LF2SATMA1 Infineon Technologies Description: ISC028N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
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ISC023N03LF2SATMA1 ISC023N03LF2SATMA1 Infineon Technologies Infineon-ISC023N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912f66941021 Description: ISC023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+25.60 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISC023N03LF2SATMA1 ISC023N03LF2SATMA1 Infineon Technologies Infineon-ISC023N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912f66941021 Description: ISC023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
6+56.50 грн
10+38.93 грн
25+35.04 грн
100+28.82 грн
250+26.89 грн
500+25.72 грн
1000+24.36 грн
2500+23.36 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
ISC012N03LF2SATMA1 ISC012N03LF2SATMA1 Infineon Technologies Description: ISC012N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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ISC012N03LF2SATMA1 ISC012N03LF2SATMA1 Infineon Technologies Description: ISC012N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 4600 шт:
термін постачання 21-31 дні (днів)
5+73.21 грн
10+50.88 грн
25+45.92 грн
100+37.97 грн
250+35.52 грн
500+34.05 грн
1000+32.29 грн
2500+31.03 грн
Мінімальне замовлення: 5
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IPD023N03LF2SATMA1 IPD023N03LF2SATMA1 Infineon Technologies Infineon-IPD023N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b81b29e82ad9 Description: IPD023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+35.37 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPD023N03LF2SATMA1 IPD023N03LF2SATMA1 Infineon Technologies Infineon-IPD023N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b81b29e82ad9 Description: IPD023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
3+125.74 грн
10+76.71 грн
100+51.37 грн
500+38.01 грн
1000+34.73 грн
Мінімальне замовлення: 3
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ICE5QR2280BG1XUMA1 ICE5QR2280BG1XUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d019233514f1f43d4 Description: ICE5QR2280BG1XUMA1
Packaging: Tape & Reel (TR)
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ICE5QR2280BG1XUMA1 ICE5QR2280BG1XUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d019233514f1f43d4 Description: ICE5QR2280BG1XUMA1
Packaging: Cut Tape (CT)
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IPP030N10NF2SAKMA1 IPP030N10NF2SAKMA1 Infineon Technologies Infineon-IPP030N10NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fe54511178c6 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 179A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 140µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
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BGSX24M2U16E6327XTSA1 BGSX24M2U16E6327XTSA1 Infineon Technologies Infineon-BGSX24M2U16-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd17eaaed054c Description: ANTENNA DEVICES
Features: DC Blocked
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
на замовлення 3490 шт:
термін постачання 21-31 дні (днів)
5+68.44 грн
10+56.33 грн
25+53.15 грн
100+45.70 грн
250+43.20 грн
500+41.43 грн
1000+39.10 грн
Мінімальне замовлення: 5
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EVALMA5342MS200WX2TOBO1 EVALMA5342MS200WX2TOBO1 Infineon Technologies Infineon-EVAL_MA5342MS_200Wx2_MA5342MS_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c8232a9ec1cb8 Description: EVAL BOARD FOR MA5342
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±30V ~ 60V
Max Output Power x Channels @ Load: 200W x 2 @ 8Ohm
Utilized IC / Part: MA5342
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+27997.38 грн
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EVALMA5302MS200WX2TOBO1 EVALMA5302MS200WX2TOBO1 Infineon Technologies Infineon-EVAL_MA5302MS_200Wx2_MA5302MS_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c817bb19d0cb4 Description: EVAL BOARD FOR MA5302
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±17V ~ 32V
Max Output Power x Channels @ Load: 200W x 2 @ 2Ohm
Utilized IC / Part: MA5302
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+27997.38 грн
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IGB070S10S1XTMA1 Infineon Technologies Description: MV GAN DISCRETES
Packaging: Tube
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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S25FL064P0XBHIS30 S25FL064P0XBHIS30 Infineon Technologies Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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S25FL064P0XMFV000 S25FL064P0XMFV000 Infineon Technologies Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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SK-FM0-V48-S6E1A1 SK-FM0-V48-S6E1A1 Infineon Technologies Description: S6E1A1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1A1
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+2182.91 грн
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S6E1A12B0AGN20000 S6E1A12B0AGN20000 Infineon Technologies download Description: IC MCU 32BIT 88KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 23
DigiKey Programmable: Not Verified
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S6E1A12B0AGN2B000 S6E1A12B0AGN2B000 Infineon Technologies Infineon-S6E1A_Series_32_bit_Arm_Cortex_M0+_FM0+_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec4f5c392c5b Description: IC MCU 32BIT 88KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 23
DigiKey Programmable: Not Verified
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S6E1A11B0AGP2B000 S6E1A11B0AGP2B000 Infineon Technologies Description: MM-LEGACY MM
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 56KB (56K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 23
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FM0-V48-S6E1A1 FM0-V48-S6E1A1 Infineon Technologies Description: S6E1A1 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1A1
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CY8C4126LCEHV423TXUMA1 Infineon Technologies Description: PSOC BASED - HV FAMILY
Packaging: Tape & Reel (TR)
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CY8C4127LCEHV423TXUMA1 Infineon Technologies Description: PSOC BASED - HV FAMILY
Packaging: Tray
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CY8C4147AZE-S475 CY8C4147AZE-S475 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8&utm_source=cypress&utm_medium=referral&utm_campaign= Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 10/12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 3175 шт:
термін постачання 21-31 дні (днів)
1+537.17 грн
10+407.84 грн
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CY8C4125AZI-S413 CY8C4125AZI-S413 Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
2+216.46 грн
10+157.10 грн
25+144.19 грн
80+123.82 грн
250+120.48 грн
Мінімальне замовлення: 2
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CY8C4146LQI-S422T CY8C4146LQI-S422T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
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CY8C4146LQI-S422T CY8C4146LQI-S422T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 2165 шт:
термін постачання 21-31 дні (днів)
2+242.72 грн
10+175.57 грн
25+160.93 грн
100+135.92 грн
250+128.71 грн
500+124.37 грн
1000+118.82 грн
Мінімальне замовлення: 2
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SI3443DV SI3443DV Infineon Technologies Si3443DV.pdf Description: MOSFET P-CH 20V 4.4A MICRO6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
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KITA2GTC3675VTRBTOBO1 KITA2GTC3675VTRBTOBO1 Infineon Technologies KITA2GTC3675VTRBTOBO1.pdf Description: KIT_A2G_TC367_5V_TRB
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC376
Platform: AURIX
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+45151.85 грн
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XMC4200F64K256BAXQMA1 XMC4200F64K256BAXQMA1 Infineon Technologies Infineon-XMC4100_XMC4200-DataSheet-v01_06-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: XMC4000
Packaging: Tray
Package / Case: 64-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 40K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-19
Number of I/O: 35
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CY8C4125AZI-S413T CY8C4125AZI-S413T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY7C1021B-15ZC CY7C1021B-15ZC Infineon Technologies CY7C1021B%20RevC.pdf Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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NBT2000A8K0T4USON8XTMA3 NBT2000A8K0T4USON8XTMA3 Infineon Technologies Infineon-OPTIGA_Authenticate_NBT_DSE-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84d5b8d24f50 Description: NBT2000A8K0T4USON8XTMA3
Packaging: Tape & Reel (TR)
Style: Card
Frequency: 13.56MHz
Memory Type: Read/Write
Operating Temperature: -25°C ~ 85°C
Technology: Passive
Standards: ISO 14443-4A, NFC
Writable Memory: 8kB (User)
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NBT2000A8K0T4USON8XTMA3 NBT2000A8K0T4USON8XTMA3 Infineon Technologies Infineon-OPTIGA_Authenticate_NBT_DSE-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84d5b8d24f50 Description: NBT2000A8K0T4USON8XTMA3
Packaging: Cut Tape (CT)
Style: Card
Frequency: 13.56MHz
Memory Type: Read/Write
Operating Temperature: -25°C ~ 85°C
Technology: Passive
Standards: ISO 14443-4A, NFC
Writable Memory: 8kB (User)
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IR3513ZMTRPBF IR3513.pdf
IR3513ZMTRPBF
Виробник: Infineon Technologies
Description: IC CTRL XPHASE3 POL 32-MLPQ
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 32-MLPQ (5x5)
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+230.07 грн
Мінімальне замовлення: 100
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IR3505ZMTRPBF IR3505Z.pdf
IR3505ZMTRPBF
Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 16-MLPQ (3x3)
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IR3505ZMTRPBF IR3505Z.pdf
IR3505ZMTRPBF
Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 16-MLPQ (3x3)
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IR3505ZMTRPBF IR3505Z.pdf
IR3505ZMTRPBF
Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Packaging: Bulk
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 16-MLPQ (3x3)
на замовлення 1324 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
136+169.13 грн
Мінімальне замовлення: 136
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IR3508ZMTRPBF IR3508Z.pdf
IR3508ZMTRPBF
Виробник: Infineon Technologies
Description: IC CTRL XPHASE3 20-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 28V
Applications: Processor
Current - Supply: 4mA
Supplier Device Package: 20-MLPQ (4x4)
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IR3508ZMTRPBF IR3508Z.pdf
IR3508ZMTRPBF
Виробник: Infineon Technologies
Description: IC CTRL XPHASE3 20-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 28V
Applications: Processor
Current - Supply: 4mA
Supplier Device Package: 20-MLPQ (4x4)
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IR3500VMTRPBF IR3500V.pdf
IR3500VMTRPBF
Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR VR11.1 32-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 6.5mA
Supplier Device Package: 32-MLPQ (5x5)
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IR3500VMTRPBF IR3500V.pdf
IR3500VMTRPBF
Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR VR11.1 32-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 6.5mA
Supplier Device Package: 32-MLPQ (5x5)
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IPQC60T010S7AXTMA1
IPQC60T010S7AXTMA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Qualification: AEC-Q101
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IPQC60T010S7AXTMA1
IPQC60T010S7AXTMA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Qualification: AEC-Q101
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TLE493DP3XXMS2GOTOBO1
TLE493DP3XXMS2GOTOBO1
Виробник: Infineon Technologies
Description: TLE493DP3XXMS2GOTOBO1
Packaging: Box
Interface: I2C, SPI
Sensor Type: Magnetic, Hall Effect
Utilized IC / Part: TLE493D-P3B6, TLE493D-P3I8
Embedded: Yes, MCU
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4181.98 грн
5+3642.85 грн
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TLE493DP3I8XTMA1
Виробник: Infineon Technologies
Description: TLE493DP3I8XTMA1
Packaging: Tape & Reel (TR)
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TLE493DP3I8XTMA1
Виробник: Infineon Technologies
Description: TLE493DP3I8XTMA1
Packaging: Cut Tape (CT)
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TLE493DW3B6B0HTSA1
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
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TLE493DW3B6B2HTSA1
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
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TLE493DW3B6B3HTSA1
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
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TLE493DW3B6B1HTSA1
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tray
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TLE493DP3B6A0HTSA1
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tray
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TLE493DP3B6A3HTSA1
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tray
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TLE493DP3B6A1HTSA1
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
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TLE493DP3B6A2HTSA1
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
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ISC052N03LF2SATMA1
ISC052N03LF2SATMA1
Виробник: Infineon Technologies
Description: ISC052N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
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ISC052N03LF2SATMA1
ISC052N03LF2SATMA1
Виробник: Infineon Technologies
Description: ISC052N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
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ISC033N03LF2SATMA1
ISC033N03LF2SATMA1
Виробник: Infineon Technologies
Description: ISC033N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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ISC033N03LF2SATMA1
ISC033N03LF2SATMA1
Виробник: Infineon Technologies
Description: ISC033N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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ISC028N03LF2SATMA1
ISC028N03LF2SATMA1
Виробник: Infineon Technologies
Description: ISC028N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
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ISC028N03LF2SATMA1
ISC028N03LF2SATMA1
Виробник: Infineon Technologies
Description: ISC028N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
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ISC023N03LF2SATMA1 Infineon-ISC023N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912f66941021
ISC023N03LF2SATMA1
Виробник: Infineon Technologies
Description: ISC023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+25.60 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISC023N03LF2SATMA1 Infineon-ISC023N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912f66941021
ISC023N03LF2SATMA1
Виробник: Infineon Technologies
Description: ISC023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+56.50 грн
10+38.93 грн
25+35.04 грн
100+28.82 грн
250+26.89 грн
500+25.72 грн
1000+24.36 грн
2500+23.36 грн
Мінімальне замовлення: 6
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ISC012N03LF2SATMA1
ISC012N03LF2SATMA1
Виробник: Infineon Technologies
Description: ISC012N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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ISC012N03LF2SATMA1
ISC012N03LF2SATMA1
Виробник: Infineon Technologies
Description: ISC012N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 4600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.21 грн
10+50.88 грн
25+45.92 грн
100+37.97 грн
250+35.52 грн
500+34.05 грн
1000+32.29 грн
2500+31.03 грн
Мінімальне замовлення: 5
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IPD023N03LF2SATMA1 Infineon-IPD023N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b81b29e82ad9
IPD023N03LF2SATMA1
Виробник: Infineon Technologies
Description: IPD023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+35.37 грн
Мінімальне замовлення: 2000
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IPD023N03LF2SATMA1 Infineon-IPD023N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b81b29e82ad9
IPD023N03LF2SATMA1
Виробник: Infineon Technologies
Description: IPD023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+125.74 грн
10+76.71 грн
100+51.37 грн
500+38.01 грн
1000+34.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ICE5QR2280BG1XUMA1 Infineon-ICE5QRxx80BG-1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d019233514f1f43d4
ICE5QR2280BG1XUMA1
Виробник: Infineon Technologies
Description: ICE5QR2280BG1XUMA1
Packaging: Tape & Reel (TR)
товару немає в наявності
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ICE5QR2280BG1XUMA1 Infineon-ICE5QRxx80BG-1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d019233514f1f43d4
ICE5QR2280BG1XUMA1
Виробник: Infineon Technologies
Description: ICE5QR2280BG1XUMA1
Packaging: Cut Tape (CT)
товару немає в наявності
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IPP030N10NF2SAKMA1 Infineon-IPP030N10NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fe54511178c6
IPP030N10NF2SAKMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 179A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 140µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
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BGSX24M2U16E6327XTSA1 Infineon-BGSX24M2U16-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd17eaaed054c
BGSX24M2U16E6327XTSA1
Виробник: Infineon Technologies
Description: ANTENNA DEVICES
Features: DC Blocked
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
на замовлення 3490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+68.44 грн
10+56.33 грн
25+53.15 грн
100+45.70 грн
250+43.20 грн
500+41.43 грн
1000+39.10 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
EVALMA5342MS200WX2TOBO1 Infineon-EVAL_MA5342MS_200Wx2_MA5342MS_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c8232a9ec1cb8
EVALMA5342MS200WX2TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR MA5342
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±30V ~ 60V
Max Output Power x Channels @ Load: 200W x 2 @ 8Ohm
Utilized IC / Part: MA5342
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+27997.38 грн
В кошику  од. на суму  грн.
EVALMA5302MS200WX2TOBO1 Infineon-EVAL_MA5302MS_200Wx2_MA5302MS_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c817bb19d0cb4
EVALMA5302MS200WX2TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR MA5302
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±17V ~ 32V
Max Output Power x Channels @ Load: 200W x 2 @ 2Ohm
Utilized IC / Part: MA5302
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+27997.38 грн
В кошику  од. на суму  грн.
IGB070S10S1XTMA1
Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tube
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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S25FL064P0XBHIS30 Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064P0XBHIS30
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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S25FL064P0XMFV000 Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064P0XMFV000
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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SK-FM0-V48-S6E1A1
SK-FM0-V48-S6E1A1
Виробник: Infineon Technologies
Description: S6E1A1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1A1
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2182.91 грн
В кошику  од. на суму  грн.
S6E1A12B0AGN20000 download
S6E1A12B0AGN20000
Виробник: Infineon Technologies
Description: IC MCU 32BIT 88KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 23
DigiKey Programmable: Not Verified
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S6E1A12B0AGN2B000 Infineon-S6E1A_Series_32_bit_Arm_Cortex_M0+_FM0+_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec4f5c392c5b
S6E1A12B0AGN2B000
Виробник: Infineon Technologies
Description: IC MCU 32BIT 88KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 23
DigiKey Programmable: Not Verified
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S6E1A11B0AGP2B000
S6E1A11B0AGP2B000
Виробник: Infineon Technologies
Description: MM-LEGACY MM
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 56KB (56K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 23
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FM0-V48-S6E1A1
FM0-V48-S6E1A1
Виробник: Infineon Technologies
Description: S6E1A1 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1A1
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CY8C4126LCEHV423TXUMA1
Виробник: Infineon Technologies
Description: PSOC BASED - HV FAMILY
Packaging: Tape & Reel (TR)
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CY8C4127LCEHV423TXUMA1
Виробник: Infineon Technologies
Description: PSOC BASED - HV FAMILY
Packaging: Tray
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CY8C4147AZE-S475 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8&utm_source=cypress&utm_medium=referral&utm_campaign=
CY8C4147AZE-S475
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 10/12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 3175 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+537.17 грн
10+407.84 грн
В кошику  од. на суму  грн.
CY8C4125AZI-S413 Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125AZI-S413
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+216.46 грн
10+157.10 грн
25+144.19 грн
80+123.82 грн
250+120.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C4146LQI-S422T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4146LQI-S422T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
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CY8C4146LQI-S422T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4146LQI-S422T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 2165 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+242.72 грн
10+175.57 грн
25+160.93 грн
100+135.92 грн
250+128.71 грн
500+124.37 грн
1000+118.82 грн
Мінімальне замовлення: 2
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SI3443DV Si3443DV.pdf
SI3443DV
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 4.4A MICRO6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
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KITA2GTC3675VTRBTOBO1 KITA2GTC3675VTRBTOBO1.pdf
KITA2GTC3675VTRBTOBO1
Виробник: Infineon Technologies
Description: KIT_A2G_TC367_5V_TRB
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC376
Platform: AURIX
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+45151.85 грн
В кошику  од. на суму  грн.
XMC4200F64K256BAXQMA1 Infineon-XMC4100_XMC4200-DataSheet-v01_06-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4200F64K256BAXQMA1
Виробник: Infineon Technologies
Description: XMC4000
Packaging: Tray
Package / Case: 64-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 40K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-19
Number of I/O: 35
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CY8C4125AZI-S413T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125AZI-S413T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY7C1021B-15ZC CY7C1021B%20RevC.pdf
CY7C1021B-15ZC
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
NBT2000A8K0T4USON8XTMA3 Infineon-OPTIGA_Authenticate_NBT_DSE-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84d5b8d24f50
NBT2000A8K0T4USON8XTMA3
Виробник: Infineon Technologies
Description: NBT2000A8K0T4USON8XTMA3
Packaging: Tape & Reel (TR)
Style: Card
Frequency: 13.56MHz
Memory Type: Read/Write
Operating Temperature: -25°C ~ 85°C
Technology: Passive
Standards: ISO 14443-4A, NFC
Writable Memory: 8kB (User)
товару немає в наявності
В кошику  од. на суму  грн.
NBT2000A8K0T4USON8XTMA3 Infineon-OPTIGA_Authenticate_NBT_DSE-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84d5b8d24f50
NBT2000A8K0T4USON8XTMA3
Виробник: Infineon Technologies
Description: NBT2000A8K0T4USON8XTMA3
Packaging: Cut Tape (CT)
Style: Card
Frequency: 13.56MHz
Memory Type: Read/Write
Operating Temperature: -25°C ~ 85°C
Technology: Passive
Standards: ISO 14443-4A, NFC
Writable Memory: 8kB (User)
товару немає в наявності
В кошику  од. на суму  грн.
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