Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124865) > Сторінка 760 з 2082
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TLE42794GXUMA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 150MA 8DSOSupplier Device Package: PG-DSO-8 Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 280 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Current - Supply (Max): 8 mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 100mA PSRR: 70dB (100Hz) Grade: Automotive Control Features: Reset Voltage - Output (Min/Fixed): 5V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
TLE42794GXUMA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 150MA 8DSOQualification: AEC-Q100 Current - Supply (Max): 8 mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 100mA PSRR: 70dB (100Hz) Grade: Automotive Control Features: Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: PG-DSO-8 Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 280 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
ISC031N08NM6SCATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 65µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
|
ISC009N06NM6SCATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 344A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 221W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 118µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
|
ISC018N08NM6SCATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 230A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 114µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
|
XMC1402Q064X0200AAXTMA1 | Infineon Technologies |
Description: XMC1000Number of I/O: 48 Supplier Device Package: PG-VQFN-64-6 Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Connectivity: I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 12x12b SAR Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 200KB (200K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 64-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
EB2ED24103D1BCSTOBO1 | Infineon Technologies |
Description: EB 2ED2410 3D 1BCS Packaging: Bulk Function: MOSFET Type: Power Management Contents: Board(s) Utilized IC / Part: 2ED2410-EM |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| TLD40203DBTOBO1 | Infineon Technologies |
Description: TLD40203DBTOBO1Packaging: Box Function: LED Driver Type: Power Management Contents: Board(s) Utilized IC / Part: TLD4020-3 |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
|
BTS700151ESPXUMA2 | Infineon Technologies |
Description: PROFET PG-TSDSO-24Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO Supplier Device Package: PG-TSDSO-24-32 Ratio - Input:Output: 1:1 Current - Output (Max): 27.6A Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V Voltage - Load: 4.1V ~ 28V Input Type: Non-Inverting Rds On (Typ): 1.7mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: USB Switch Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Features: Slew Rate Controlled Packaging: Cut Tape (CT) |
на замовлення 2912 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BGA8G1BN6E6327XTSA1 | Infineon Technologies |
Description: IC RF AMP 1.452GHZ-1.61GHZ TSNP6 Voltage - Supply: 1.6V ~ 3.1V Frequency: 1.452GHz ~ 1.61GHz Mounting Type: Surface Mount Package / Case: 6-XFDFN Packaging: Tape & Reel (TR) Supplier Device Package: PG-TSNP-6-2 Test Frequency: 1.452GHz ~ 1.61GHz P1dB: 8dBm Noise Figure: 0.8dB ~ 4.1dB Current - Supply: 4.7mA |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||||
|
IDWD75G120C5XKSA1 | Infineon Technologies |
Description: SIC DISCRETEPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 4243pF @ 1V, 100kHz Current - Average Rectified (Io): 186A Supplier Device Package: PG-TO247-2-U01 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 75 A Current - Reverse Leakage @ Vr: 600 µA @ 1.2 kV |
на замовлення 89 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| DF80R07W1H5S8B11BOMA1 | Infineon Technologies |
Description: EASY STANDARD Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | |||||||||||||||||
|
IMZC120R017M2HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 1200V 97A TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 40A, 18V Power Dissipation (Max): 382W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 12.7mA Supplier Device Package: PG-TO247-4-17 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V |
на замовлення 739 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| CY8C4146LDSS243XQLA1 | Infineon Technologies |
Description: PSOC4 - GENERALPackaging: Tray Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT Supplier Device Package: 40-QFN (6x6) Grade: Automotive Number of I/O: 40 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | |||||||||||||||||
| CY8C4146LDSS243TXUMA1 | Infineon Technologies |
Description: PSOC4 - GENERALPackaging: Tape & Reel (TR) Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT Supplier Device Package: 40-QFN (6x6) Grade: Automotive Number of I/O: 40 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
|
CY8C4147LDSS243XQLA1 | Infineon Technologies |
Description: PSOC4 - GENERALPackaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT Supplier Device Package: 48-QFN (7x7) Grade: Automotive Number of I/O: 40 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | ||||||||||||||||
|
CY8C4147LDSS243TXUMA1 | Infineon Technologies |
Description: PSOC4 - GENERALPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT Supplier Device Package: 48-QFN (7x7) Grade: Automotive Number of I/O: 40 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
IM68D128BV01XTMA1 | Infineon Technologies |
Description: IM68D128BV01XTMA1Packaging: Tape & Reel (TR) Output Type: Digital, PDM Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm) Sensitivity: -37dB ±1dB @ 94dB SPL Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 67.5dB Termination: Solder Pads Direction: Omnidirectional Ratings: IP67 - Dust Tight, Waterproof Port Location: Bottom Height (Max): 0.043" (1.08mm) Voltage - Rated: 1.8 V Current - Supply: 5 µA Voltage Range: 1.6 V ~ 3.465 V Frequency Range: 10 Hz ~ 10 kHz |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
IM68D128BV01XTMA1 | Infineon Technologies |
Description: IM68D128BV01XTMA1Packaging: Cut Tape (CT) Output Type: Digital, PDM Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm) Sensitivity: -37dB ±1dB @ 94dB SPL Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 67.5dB Termination: Solder Pads Direction: Omnidirectional Ratings: IP67 - Dust Tight, Waterproof Port Location: Bottom Height (Max): 0.043" (1.08mm) Voltage - Rated: 1.8 V Current - Supply: 5 µA Voltage Range: 1.6 V ~ 3.465 V Frequency Range: 10 Hz ~ 10 kHz |
на замовлення 2546 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IMZA120R022M2HXKSA1 | Infineon Technologies |
Description: IMZA120R022M2HXKSA1Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Supplier Device Package: PG-TO247-4-8 Vgs(th) (Max) @ Id: 5.1V @ 10.1mA Power Dissipation (Max): 329W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 32A, 18V |
на замовлення 199 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| TLE95633QXWJXUMA1 | Infineon Technologies |
Description: BLDC_MOTOR_CONTROL Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
|
IRFBL3315 | Infineon Technologies |
Description: MOSFET N-CH 150V 21A SUPER D2PAKCurrent - Continuous Drain (Id) @ 25°C: 21A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: Super D2-Pak Packaging: Tube Drain to Source Voltage (Vdss): 150 V Supplier Device Package: Super D2-Pak |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||
| TDA22561XUMA1 | Infineon Technologies |
Description: POWERSTAGE CE Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
|
CY7C1361C-100AXC | Infineon Technologies |
Description: IC SRAM 9MBIT PAR 100TQFPDigiKey Programmable: Not Verified Memory Organization: 256K x 36 Access Time: 8.5 ns Memory Interface: Parallel Supplier Device Package: 100-TQFP (14x20) Memory Format: SRAM Clock Frequency: 100 MHz Technology: SRAM - Synchronous, SDR Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 9Mbit Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | ||||||||||||||||
|
FF06MR12A04MA2AKSA1 | Infineon Technologies |
Description: HYBRIDPACK DSC S MODULE WITH SICPackaging: Tube Package / Case: 11-PowerDIP Module (2.091", 53.10mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 20mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 190A Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 850V Rds On (Max) @ Id, Vgs: 5.56mOhm @ 190A, 18V Gate Charge (Qg) (Max) @ Vgs: 420nC @ 18V Vgs(th) (Max) @ Id: 4.55V @ 60mA Supplier Device Package: PG-MDIP-11-1 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 69 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IPB65R420CFDATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 8.7A D2PAKFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4.5V @ 340µA Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
CYT3DLABABQ1AESGS | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPHNumber of I/O: 108 Supplier Device Package: 216-TEQFP (24x24) Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Dual-Core Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F EEPROM Size: 128K x 8 Program Memory Type: FLASH Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 384K x 8 Program Memory Size: 4.0625MB (4.0625M x 8) Speed: 240MHz Mounting Type: Surface Mount Package / Case: 216-LQFP Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||||
|
CYT4DNJBACQ1BZSGS | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPHNumber of I/O: 168 Program Memory Size: 6.19MB (6.19M x 8) Speed: 100MHz, 320MHz Mounting Type: Surface Mount Package / Case: 327-LFBGA Packaging: Tray Supplier Device Package: 327-FBGA (17x17) Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 48x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F EEPROM Size: 128K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 640K x 8 |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||||
|
CYT4DNJBACQ1BZSGST | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPHCore Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F EEPROM Size: 128K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 640K x 8 Program Memory Size: 6.19MB (6.19M x 8) Speed: 100MHz, 320MHz Mounting Type: Surface Mount Package / Case: 327-LFBGA Packaging: Tape & Reel (TR) Number of I/O: 168 Supplier Device Package: 327-FBGA (17x17) Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 48x12b SAR |
товару немає в наявності |
Мінімальне замовлення: 700 шт В кошику од. на суму грн. | ||||||||||||||||
|
CYT4DNJBBCQ1BZSGS | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPHNumber of I/O: 168 Supplier Device Package: 327-FBGA (17x17) Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 48x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F EEPROM Size: 128K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 640K x 8 Program Memory Size: 6.19MB (6.19M x 8) Speed: 100MHz, 320MHz Mounting Type: Surface Mount Package / Case: 327-LFBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||||
|
CYT4DNJBBCQ1BZSGST | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPHEEPROM Size: 128K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 640K x 8 Program Memory Size: 6.19MB (6.19M x 8) Speed: 100MHz, 320MHz Mounting Type: Surface Mount Package / Case: 327-LFBGA Packaging: Tape & Reel (TR) Number of I/O: 168 Supplier Device Package: 327-FBGA (17x17) Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 48x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F |
товару немає в наявності |
Мінімальне замовлення: 700 шт В кошику од. на суму грн. | ||||||||||||||||
|
CYT4DNJBGCQ1BZSGS | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPHPeripherals: DMA, I2S, LVD, Temp Sensor, WDT Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 48x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F EEPROM Size: 128K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 640K x 8 Program Memory Size: 6.19MB (6.19M x 8) Speed: 100MHz, 320MHz Number of I/O: 168 Supplier Device Package: 327-FBGA (17x17) Mounting Type: Surface Mount Package / Case: 327-LFBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||||
|
CYT4DNJBFCQ1BZSGS | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPHProgram Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 640K x 8 Program Memory Size: 6.19MB (6.19M x 8) Speed: 100MHz, 320MHz Mounting Type: Surface Mount Package / Case: 327-LFBGA Packaging: Tray Number of I/O: 168 Supplier Device Package: 327-FBGA (17x17) Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 48x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F EEPROM Size: 128K x 8 |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||||
|
CYT4DNJBDCQ1BZSGS | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPHSpeed: 100MHz, 320MHz Mounting Type: Surface Mount Package / Case: 327-LFBGA Packaging: Tray Number of I/O: 168 Supplier Device Package: 327-FBGA (17x17) Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 48x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F EEPROM Size: 128K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 640K x 8 Program Memory Size: 6.19MB (6.19M x 8) |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
XMC1201Q040F0200ABXTMA1 | Infineon Technologies |
Description: XMC1000Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x12b SAR Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 16K x 8 Program Memory Size: 200KB (200K x 8) Speed: 32MHz Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Number of I/O: 35 Supplier Device Package: PG-VQFN-40-13 Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Connectivity: I2C, LINbus, SPI, UART/USART |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
XMC1302Q040X0200ABXTMA1 | Infineon Technologies |
Description: XMC1000Number of I/O: 34 Supplier Device Package: PG-VQFN-40-13 Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Connectivity: I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x12b SAR Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 200KB (200K x 8) Speed: 32MHz Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
XMC1403Q040X0200AAXTMA1 | Infineon Technologies |
Description: XMC1000Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 200KB (200K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-40-13 Number of I/O: 27 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
XMC1404Q048X0200AAXTMA1 | Infineon Technologies |
Description: XMC1000Speed: 48MHz Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Number of I/O: 34 Supplier Device Package: PG-VQFN-48-73 Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 12x12b SAR Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 200KB (200K x 8) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
XMC1403Q064X0200AAXTMA1 | Infineon Technologies |
Description: XMC1000Packaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 200KB (200K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-64-6 Number of I/O: 48 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
XMC1404Q064X0200AAXTMA1 | Infineon Technologies |
Description: XMC1000Number of I/O: 48 Supplier Device Package: PG-VQFN-64-6 Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 12x12b SAR Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 200KB (200K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 64-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
XMC1404Q040X0200AAXTMA1 | Infineon Technologies |
Description: XMC1000Number of I/O: 27 Supplier Device Package: PG-VQFN-40-13 Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 12x12b SAR Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 200KB (200K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
XMC1402Q040X0200AAXTMA1 | Infineon Technologies |
Description: XMC1000Program Memory Size: 200KB (200K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Number of I/O: 27 Supplier Device Package: PG-VQFN-40-13 Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Connectivity: I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 12x12b SAR Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
CYW20733A3KFB1GT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 81FBGAPackaging: Cut Tape (CT) Package / Case: 81-TFBGA Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V Power - Output: 10dBm Protocol: Bluetooth v3.0 Current - Receiving: 26.4mA Current - Transmitting: 47mA Supplier Device Package: 81-FBGA (8x8) RF Family/Standard: Bluetooth Serial Interfaces: I2C, I2S, SPI, UART DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IMWH170R450M1XKSA1 | Infineon Technologies |
Description: IMWH170R450M1XKSA1Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tj) Rds On (Max) @ Id, Vgs: 390mOhm @ 2A, 15V Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 2.6mA Supplier Device Package: PG-TO247-3-U04 Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): 15V, 12V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 1000 V |
на замовлення 480 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TC277T64F200SDCLXUMA2 | Infineon Technologies |
Description: AURIX 1G-PSEPackaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit 5-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
|
TC397XP256F300SBDKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 16MB FLASH 292LFBGAPackaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 16MB (16M x 8) RAM Size: 2.52M x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: TriCore™ Core Size: 32-Bit 10-Core Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, LVDS, PWM, WDT Supplier Device Package: PG-LFBGA-292-10 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
|
TC397XP256F300SBDKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 16MB FLASH 292LFBGAPackaging: Cut Tape (CT) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 16MB (16M x 8) RAM Size: 2.52M x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: TriCore™ Core Size: 32-Bit 10-Core Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, LVDS, PWM, WDT Supplier Device Package: PG-LFBGA-292-10 |
на замовлення 777 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
IGL65R140D2XUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 13A 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: PG-TSON-8-U06 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
IGL65R140D2XUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 13A 8TDFNPackaging: Cut Tape (CT) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: PG-TSON-8-U06 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V |
на замовлення 1375 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
IGL65R110D2XUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 16A 8TDFNInput Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): -10V Supplier Device Package: PG-TSON-8-U06 Vgs(th) (Max) @ Id: 1.6V @ 1.3mA Power Dissipation (Max): 59W (Tc) Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-TDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
IGL65R110D2XUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 16A 8TDFNCurrent - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-TDFN Exposed Pad Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): -10V Supplier Device Package: PG-TSON-8-U06 Vgs(th) (Max) @ Id: 1.6V @ 1.3mA Power Dissipation (Max): 59W (Tc) |
на замовлення 2488 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
IGL65R080D2XUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 18A 8TDFNInput Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): -10V Supplier Device Package: PG-TSON-8-U06 Vgs(th) (Max) @ Id: 1.6V @ 1.8mA Power Dissipation (Max): 81W (Tc) Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-TDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
IGL65R080D2XUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 18A 8TDFNInput Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): -10V Supplier Device Package: PG-TSON-8-U06 Vgs(th) (Max) @ Id: 1.6V @ 1.8mA Power Dissipation (Max): 81W (Tc) Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-TDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2864 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
IGL65R055D2XUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 22A 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-TSON-8-U06 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
IGL65R055D2XUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 22A 8TDFNPackaging: Cut Tape (CT) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-TSON-8-U06 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V |
на замовлення 1084 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IPW65R040CM8XKSA1 | Infineon Technologies |
Description: IPW65R040CM8XKSA1Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V Power Dissipation (Max): 329W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 680µA Supplier Device Package: PG-TO247-3-U06 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V |
на замовлення 210 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
S25FL512SDSBHVC13 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24BGAMemory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tape & Reel (TR) Memory Organization: 64M x 8 Access Time: 6.5 ns Memory Interface: SPI - Quad I/O Write Cycle Time - Word, Page: 750µs Supplier Device Package: 24-BGA (8x6) Memory Format: FLASH Clock Frequency: 80 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
IRG4PC30FPBF | Infineon Technologies |
Description: IGBTPackaging: Bulk |
на замовлення 847 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
KP219F1804XTMA1 | Infineon Technologies |
Description: INTEGRATED PRESSURE SENSPackaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
|
CY7C1370KV25-167BZI | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 136 шт В кошику од. на суму грн. |
| TLE42794GXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 150MA 8DSO
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 280 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 70dB (100Hz)
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Description: IC REG LINEAR 5V 150MA 8DSO
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 280 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 70dB (100Hz)
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE42794GXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 150MA 8DSO
Qualification: AEC-Q100
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 70dB (100Hz)
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 280 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 5V 150MA 8DSO
Qualification: AEC-Q100
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 70dB (100Hz)
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 280 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| ISC031N08NM6SCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| ISC009N06NM6SCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 344A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 221W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 118µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 344A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 221W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 118µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| ISC018N08NM6SCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 40 V
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| XMC1402Q064X0200AAXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: XMC1000
Number of I/O: 48
Supplier Device Package: PG-VQFN-64-6
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: XMC1000
Number of I/O: 48
Supplier Device Package: PG-VQFN-64-6
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| EB2ED24103D1BCSTOBO1 |
Виробник: Infineon Technologies
Description: EB 2ED2410 3D 1BCS
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2410-EM
Description: EB 2ED2410 3D 1BCS
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2410-EM
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6307.75 грн |
| TLD40203DBTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: TLD40203DBTOBO1
Packaging: Box
Function: LED Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLD4020-3
Description: TLD40203DBTOBO1
Packaging: Box
Function: LED Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLD4020-3
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 516.09 грн |
| BTS700151ESPXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-24
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
Supplier Device Package: PG-TSDSO-24-32
Ratio - Input:Output: 1:1
Current - Output (Max): 27.6A
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Voltage - Load: 4.1V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 1.7mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: USB Switch
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Description: PROFET PG-TSDSO-24
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
Supplier Device Package: PG-TSDSO-24-32
Ratio - Input:Output: 1:1
Current - Output (Max): 27.6A
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Voltage - Load: 4.1V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 1.7mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: USB Switch
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
на замовлення 2912 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 261.92 грн |
| 10+ | 190.66 грн |
| 25+ | 175.24 грн |
| 100+ | 148.55 грн |
| 250+ | 140.96 грн |
| 500+ | 136.39 грн |
| 1000+ | 130.45 грн |
| BGA8G1BN6E6327XTSA1 |
Виробник: Infineon Technologies
Description: IC RF AMP 1.452GHZ-1.61GHZ TSNP6
Voltage - Supply: 1.6V ~ 3.1V
Frequency: 1.452GHz ~ 1.61GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-TSNP-6-2
Test Frequency: 1.452GHz ~ 1.61GHz
P1dB: 8dBm
Noise Figure: 0.8dB ~ 4.1dB
Current - Supply: 4.7mA
Description: IC RF AMP 1.452GHZ-1.61GHZ TSNP6
Voltage - Supply: 1.6V ~ 3.1V
Frequency: 1.452GHz ~ 1.61GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-TSNP-6-2
Test Frequency: 1.452GHz ~ 1.61GHz
P1dB: 8dBm
Noise Figure: 0.8dB ~ 4.1dB
Current - Supply: 4.7mA
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| IDWD75G120C5XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4243pF @ 1V, 100kHz
Current - Average Rectified (Io): 186A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 75 A
Current - Reverse Leakage @ Vr: 600 µA @ 1.2 kV
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4243pF @ 1V, 100kHz
Current - Average Rectified (Io): 186A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 75 A
Current - Reverse Leakage @ Vr: 600 µA @ 1.2 kV
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1433.58 грн |
| 30+ | 873.44 грн |
| DF80R07W1H5S8B11BOMA1 |
товару немає в наявності
Мінімальне замовлення: 24 шт
В кошику
од. на суму грн.
| IMZC120R017M2HXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 97A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 40A, 18V
Power Dissipation (Max): 382W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
Description: SICFET N-CH 1200V 97A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 40A, 18V
Power Dissipation (Max): 382W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
на замовлення 739 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1323.54 грн |
| 30+ | 796.73 грн |
| 120+ | 692.08 грн |
| 510+ | 620.77 грн |
| CY8C4146LDSS243XQLA1 |
![]() |
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.
| CY8C4146LDSS243TXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY8C4147LDSS243XQLA1 |
![]() |
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.
| CY8C4147LDSS243TXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IM68D128BV01XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: IM68D128BV01XTMA1
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -37dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67.5dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP67 - Dust Tight, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Voltage - Rated: 1.8 V
Current - Supply: 5 µA
Voltage Range: 1.6 V ~ 3.465 V
Frequency Range: 10 Hz ~ 10 kHz
Description: IM68D128BV01XTMA1
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -37dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67.5dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP67 - Dust Tight, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Voltage - Rated: 1.8 V
Current - Supply: 5 µA
Voltage Range: 1.6 V ~ 3.465 V
Frequency Range: 10 Hz ~ 10 kHz
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IM68D128BV01XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: IM68D128BV01XTMA1
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -37dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67.5dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP67 - Dust Tight, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Voltage - Rated: 1.8 V
Current - Supply: 5 µA
Voltage Range: 1.6 V ~ 3.465 V
Frequency Range: 10 Hz ~ 10 kHz
Description: IM68D128BV01XTMA1
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -37dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67.5dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP67 - Dust Tight, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Voltage - Rated: 1.8 V
Current - Supply: 5 µA
Voltage Range: 1.6 V ~ 3.465 V
Frequency Range: 10 Hz ~ 10 kHz
на замовлення 2546 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.06 грн |
| 5+ | 87.75 грн |
| 10+ | 83.43 грн |
| 25+ | 73.59 грн |
| 50+ | 70.32 грн |
| 100+ | 67.35 грн |
| 500+ | 60.36 грн |
| 1000+ | 58.17 грн |
| IMZA120R022M2HXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IMZA120R022M2HXKSA1
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: PG-TO247-4-8
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 32A, 18V
Description: IMZA120R022M2HXKSA1
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: PG-TO247-4-8
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 32A, 18V
на замовлення 199 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1030.63 грн |
| 30+ | 610.87 грн |
| 120+ | 541.09 грн |
| IRFBL3315 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A SUPER D2PAK
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Super D2-Pak
Packaging: Tube
Drain to Source Voltage (Vdss): 150 V
Supplier Device Package: Super D2-Pak
Description: MOSFET N-CH 150V 21A SUPER D2PAK
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Super D2-Pak
Packaging: Tube
Drain to Source Voltage (Vdss): 150 V
Supplier Device Package: Super D2-Pak
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| CY7C1361C-100AXC |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PAR 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 256K x 36
Access Time: 8.5 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 100 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 9Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: IC SRAM 9MBIT PAR 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 256K x 36
Access Time: 8.5 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 100 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 9Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| FF06MR12A04MA2AKSA1 |
![]() |
Виробник: Infineon Technologies
Description: HYBRIDPACK DSC S MODULE WITH SIC
Packaging: Tube
Package / Case: 11-PowerDIP Module (2.091", 53.10mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A
Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 850V
Rds On (Max) @ Id, Vgs: 5.56mOhm @ 190A, 18V
Gate Charge (Qg) (Max) @ Vgs: 420nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 60mA
Supplier Device Package: PG-MDIP-11-1
Grade: Automotive
Qualification: AEC-Q101
Description: HYBRIDPACK DSC S MODULE WITH SIC
Packaging: Tube
Package / Case: 11-PowerDIP Module (2.091", 53.10mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A
Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 850V
Rds On (Max) @ Id, Vgs: 5.56mOhm @ 190A, 18V
Gate Charge (Qg) (Max) @ Vgs: 420nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 60mA
Supplier Device Package: PG-MDIP-11-1
Grade: Automotive
Qualification: AEC-Q101
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10846.38 грн |
| 12+ | 8762.84 грн |
| 36+ | 8320.42 грн |
| IPB65R420CFDATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Power Dissipation (Max): 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Description: MOSFET N-CH 650V 8.7A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Power Dissipation (Max): 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
товару немає в наявності
В кошику
од. на суму грн.
| CYT3DLABABQ1AESGS |
![]() |
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Number of I/O: 108
Supplier Device Package: 216-TEQFP (24x24)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 384K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 240MHz
Mounting Type: Surface Mount
Package / Case: 216-LQFP Exposed Pad
Packaging: Tray
Description: TRAVEO-2 CLUST.2.5DGRAPH
Number of I/O: 108
Supplier Device Package: 216-TEQFP (24x24)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 384K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 240MHz
Mounting Type: Surface Mount
Package / Case: 216-LQFP Exposed Pad
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| CYT4DNJBACQ1BZSGS |
![]() |
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Number of I/O: 168
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Description: TRAVEO-2 CLUST.2.5DGRAPH
Number of I/O: 168
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику
од. на суму грн.
| CYT4DNJBACQ1BZSGST |
![]() |
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tape & Reel (TR)
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Description: TRAVEO-2 CLUST.2.5DGRAPH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tape & Reel (TR)
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
товару немає в наявності
Мінімальне замовлення: 700 шт
В кошику
од. на суму грн.
| CYT4DNJBBCQ1BZSGS |
![]() |
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Description: TRAVEO-2 CLUST.2.5DGRAPH
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику
од. на суму грн.
| CYT4DNJBBCQ1BZSGST |
![]() |
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tape & Reel (TR)
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Description: TRAVEO-2 CLUST.2.5DGRAPH
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tape & Reel (TR)
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
товару немає в наявності
Мінімальне замовлення: 700 шт
В кошику
од. на суму грн.
| CYT4DNJBGCQ1BZSGS |
![]() |
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Description: TRAVEO-2 CLUST.2.5DGRAPH
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику
од. на суму грн.
| CYT4DNJBFCQ1BZSGS |
![]() |
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Description: TRAVEO-2 CLUST.2.5DGRAPH
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику
од. на суму грн.
| CYT4DNJBDCQ1BZSGS |
![]() |
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Description: TRAVEO-2 CLUST.2.5DGRAPH
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику
од. на суму грн.
| XMC1201Q040F0200ABXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: XMC1000
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 35
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Description: XMC1000
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 35
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| XMC1302Q040X0200ABXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: XMC1000
Number of I/O: 34
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: XMC1000
Number of I/O: 34
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| XMC1403Q040X0200AAXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| XMC1404Q048X0200AAXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: XMC1000
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 34
Supplier Device Package: PG-VQFN-48-73
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Description: XMC1000
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 34
Supplier Device Package: PG-VQFN-48-73
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| XMC1403Q064X0200AAXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| XMC1404Q064X0200AAXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: XMC1000
Number of I/O: 48
Supplier Device Package: PG-VQFN-64-6
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: XMC1000
Number of I/O: 48
Supplier Device Package: PG-VQFN-64-6
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| XMC1404Q040X0200AAXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: XMC1000
Number of I/O: 27
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: XMC1000
Number of I/O: 27
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| XMC1402Q040X0200AAXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: XMC1000
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 27
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Description: XMC1000
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 27
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| CYW20733A3KFB1GT |
![]() |
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 81FBGA
Packaging: Cut Tape (CT)
Package / Case: 81-TFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 81-FBGA (8x8)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 81FBGA
Packaging: Cut Tape (CT)
Package / Case: 81-TFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 81-FBGA (8x8)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 292.92 грн |
| 10+ | 243.56 грн |
| 25+ | 230.25 грн |
| 100+ | 198.95 грн |
| 250+ | 188.68 грн |
| 500+ | 181.42 грн |
| 1000+ | 171.72 грн |
| IMWH170R450M1XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IMWH170R450M1XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Rds On (Max) @ Id, Vgs: 390mOhm @ 2A, 15V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 1000 V
Description: IMWH170R450M1XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Rds On (Max) @ Id, Vgs: 390mOhm @ 2A, 15V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 1000 V
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 543.99 грн |
| 30+ | 302.31 грн |
| 120+ | 253.69 грн |
| TC277T64F200SDCLXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: AURIX 1G-PSE
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Description: AURIX 1G-PSE
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TC397XP256F300SBDKXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TC397XP256F300SBDKXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
на замовлення 777 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4322.43 грн |
| 10+ | 3444.94 грн |
| 25+ | 3265.79 грн |
| 100+ | 2880.12 грн |
| IGL65R140D2XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IGL65R140D2XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
на замовлення 1375 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.22 грн |
| 10+ | 170.88 грн |
| 100+ | 119.62 грн |
| 500+ | 92.57 грн |
| IGL65R110D2XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 16A 8TDFN
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Power Dissipation (Max): 59W (Tc)
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: GANFET N-CH 650V 16A 8TDFN
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Power Dissipation (Max): 59W (Tc)
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IGL65R110D2XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 16A 8TDFN
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Power Dissipation (Max): 59W (Tc)
Description: GANFET N-CH 650V 16A 8TDFN
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Power Dissipation (Max): 59W (Tc)
на замовлення 2488 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 316.16 грн |
| 10+ | 200.58 грн |
| 100+ | 141.72 грн |
| 500+ | 113.91 грн |
| IGL65R080D2XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 18A 8TDFN
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Power Dissipation (Max): 81W (Tc)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: GANFET N-CH 650V 18A 8TDFN
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Power Dissipation (Max): 81W (Tc)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IGL65R080D2XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 18A 8TDFN
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Power Dissipation (Max): 81W (Tc)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: GANFET N-CH 650V 18A 8TDFN
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Power Dissipation (Max): 81W (Tc)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2864 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 400.63 грн |
| 10+ | 257.44 грн |
| 100+ | 184.53 грн |
| 500+ | 156.88 грн |
| IGL65R055D2XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 22A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
Description: GANFET N-CH 650V 22A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IGL65R055D2XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 22A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
Description: GANFET N-CH 650V 22A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
на замовлення 1084 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 478.89 грн |
| 10+ | 310.35 грн |
| 100+ | 224.96 грн |
| 500+ | 199.05 грн |
| IPW65R040CM8XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IPW65R040CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
Description: IPW65R040CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 546.31 грн |
| 30+ | 306.94 грн |
| 120+ | 258.80 грн |
| S25FL512SDSBHVC13 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Memory Organization: 64M x 8
Access Time: 6.5 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 750µs
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Memory Organization: 64M x 8
Access Time: 6.5 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 750µs
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRG4PC30FPBF |
![]() |
на замовлення 847 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 145.35 грн |
| CY7C1370KV25-167BZI |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 136 шт
В кошику
од. на суму грн.





























