Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149180) > Сторінка 759 з 2487
Фото | Назва | Виробник | Інформація |
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CY8C5468LTI-037 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 2x12b; D/A 4x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
IS26KS512S-DPBLA200 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGA Packaging: Bulk Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: HyperFlash Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-VFBGA (6x8) Memory Interface: HyperBus Access Time: 96 ns Memory Organization: 64M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
IS26KS256S-DPBLA200-TR | Infineon Technologies |
Description: IC FLASH 256MBIT HYPERBUS Packaging: Bulk Memory Size: 256Mbit Memory Format: FLASH Memory Interface: HyperBus Memory Organization: 32M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CY8C6148LQI-S2F02 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 512K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 53 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3513ZMTRPBF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C Voltage - Supply: 8V ~ 16V Applications: Processor Current - Supply: 3mA Supplier Device Package: 32-MLPQ (5x5) |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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IR3505ZMTRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C Voltage - Supply: 8V ~ 16V Applications: Processor Current - Supply: 3mA Supplier Device Package: 16-MLPQ (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3505ZMTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C Voltage - Supply: 8V ~ 16V Applications: Processor Current - Supply: 3mA Supplier Device Package: 16-MLPQ (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3505ZMTRPBF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C Voltage - Supply: 8V ~ 16V Applications: Processor Current - Supply: 3mA Supplier Device Package: 16-MLPQ (3x3) |
на замовлення 1324 шт: термін постачання 21-31 дні (днів) |
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IR3508ZMTRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C Voltage - Supply: 8V ~ 28V Applications: Processor Current - Supply: 4mA Supplier Device Package: 20-MLPQ (4x4) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3508ZMTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C Voltage - Supply: 8V ~ 28V Applications: Processor Current - Supply: 4mA Supplier Device Package: 20-MLPQ (4x4) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3500VMTRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 100°C Voltage - Supply: 4.75V ~ 7.5V Applications: Processor Current - Supply: 6.5mA Supplier Device Package: 32-MLPQ (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3500VMTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 100°C Voltage - Supply: 4.75V ~ 7.5V Applications: Processor Current - Supply: 6.5mA Supplier Device Package: 32-MLPQ (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPQC60T010S7AXTMA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOS Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.06mA Supplier Device Package: PG-HDSOP-22-101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPQC60T010S7AXTMA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.06mA Supplier Device Package: PG-HDSOP-22-101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE493DP3XXMS2GOTOBO1 | Infineon Technologies |
Description: TLE493DP3XXMS2GOTOBO1 Packaging: Box Interface: I2C, SPI Sensor Type: Magnetic, Hall Effect Utilized IC / Part: TLE493D-P3B6, TLE493D-P3I8 Embedded: Yes, MCU |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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TLE493DP3I8XTMA1 | Infineon Technologies |
Description: TLE493DP3I8XTMA1 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLE493DP3I8XTMA1 | Infineon Technologies |
Description: TLE493DP3I8XTMA1 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLE493DW3B6B0HTSA1 | Infineon Technologies |
Description: POSITION SENS ATV Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLE493DW3B6B2HTSA1 | Infineon Technologies |
Description: POSITION SENS ATV Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLE493DW3B6B3HTSA1 | Infineon Technologies |
Description: POSITION SENS ATV Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLE493DW3B6B1HTSA1 | Infineon Technologies |
Description: POSITION SENS ATV Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLE493DP3B6A0HTSA1 | Infineon Technologies |
Description: POSITION SENS ATV Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLE493DP3B6A3HTSA1 | Infineon Technologies |
Description: POSITION SENS ATV Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLE493DP3B6A1HTSA1 | Infineon Technologies |
Description: POSITION SENS ATV Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TLE493DP3B6A2HTSA1 | Infineon Technologies |
Description: POSITION SENS ATV Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ISC052N03LF2SATMA1 | Infineon Technologies |
Description: ISC052N03LF2SATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISC052N03LF2SATMA1 | Infineon Technologies |
Description: ISC052N03LF2SATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISC033N03LF2SATMA1 | Infineon Technologies |
Description: ISC033N03LF2SATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISC033N03LF2SATMA1 | Infineon Technologies |
Description: ISC033N03LF2SATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISC028N03LF2SATMA1 | Infineon Technologies |
Description: ISC028N03LF2SATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISC028N03LF2SATMA1 | Infineon Technologies |
Description: ISC028N03LF2SATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISC023N03LF2SATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 40µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC023N03LF2SATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 40µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC012N03LF2SATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 80µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISC012N03LF2SATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 80µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
на замовлення 4600 шт: термін постачання 21-31 дні (днів) |
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IPD023N03LF2SATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 60µA Supplier Device Package: PG-TO252-3-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPD023N03LF2SATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 60µA Supplier Device Package: PG-TO252-3-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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ICE5QR2280BG1XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ICE5QR2280BG1XUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP030N10NF2SAKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 179A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 140µA Supplier Device Package: PG-TO220-3-U05 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGSX24M2U16E6327XTSA1 | Infineon Technologies |
![]() Features: DC Blocked Packaging: Cut Tape (CT) Package / Case: 16-UFLGA Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: DP4T RF Type: 5G, LTE Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V Insertion Loss: 1.14dB Frequency Range: 400MHz ~ 7.125GHz Topology: Absorptive Test Frequency: 7.125GHz Isolation: 35dB Supplier Device Package: PG-ULGA-16-6 |
на замовлення 3490 шт: термін постачання 21-31 дні (днів) |
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EVALMA5342MS200WX2TOBO1 | Infineon Technologies |
![]() Packaging: Box Output Type: 2-Channel (Stereo) Amplifier Type: Class D Contents: Board(s) Voltage - Supply: ±30V ~ 60V Max Output Power x Channels @ Load: 200W x 2 @ 8Ohm Utilized IC / Part: MA5342 |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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EVALMA5302MS200WX2TOBO1 | Infineon Technologies |
![]() Packaging: Box Output Type: 2-Channel (Stereo) Amplifier Type: Class D Contents: Board(s) Voltage - Supply: ±17V ~ 32V Max Output Power x Channels @ Load: 200W x 2 @ 2Ohm Utilized IC / Part: MA5302 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IGB070S10S1XTMA1 | Infineon Technologies |
Description: MV GAN DISCRETES Packaging: Tube Package / Case: 4-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 8mA Supplier Device Package: PG-TSON-4-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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S25FL064P0XBHIS30 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (6x8) Write Cycle Time - Word, Page: 5µs, 3ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S25FL064P0XMFV000 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Write Cycle Time - Word, Page: 5µs, 3ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SK-FM0-V48-S6E1A1 | Infineon Technologies |
Description: S6E1A1 EVAL BRD Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M0+ Utilized IC / Part: S6E1A1 |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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S6E1A12B0AGN20000 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 88KB (88K x 8) RAM Size: 6K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 5x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 23 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S6E1A12B0AGN2B000 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 88KB (88K x 8) RAM Size: 6K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 5x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 23 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S6E1A11B0AGP2B000 | Infineon Technologies |
Description: MM-LEGACY MM Packaging: Tape & Reel (TR) Package / Case: 32-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 56KB (56K x 8) RAM Size: 6K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 5x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 32-LQFP (7x7) Number of I/O: 23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FM0-V48-S6E1A1 | Infineon Technologies |
Description: S6E1A1 EVAL BRD Packaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M0+ Utilized IC / Part: S6E1A1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
CY8C4126LCEHV423TXUMA1 | Infineon Technologies |
Description: PSOC BASED - HV FAMILY Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CY8C4127LCEHV423TXUMA1 | Infineon Technologies |
Description: PSOC BASED - HV FAMILY Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CY8C4147AZE-S475 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 10/12b SAR; D/A 2x7b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 54 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 3175 шт: термін постачання 21-31 дні (днів) |
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CY8C4125AZI-S413 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b Slope; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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CY8C4146LQI-S422T | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 27 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C4146LQI-S422T | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 27 DigiKey Programmable: Not Verified |
на замовлення 2165 шт: термін постачання 21-31 дні (днів) |
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SI3443DV | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: Micro6™(TSOP-6) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KITA2GTC3675VTRBTOBO1 | Infineon Technologies |
![]() Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: TriCore™ Utilized IC / Part: TC376 Platform: AURIX |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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XMC4200F64K256BAXQMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 256KB (256K x 8) RAM Size: 40K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 10x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB Peripherals: DMA, I2S, LED, POR, PWM, WDT Supplier Device Package: PG-TQFP-64-19 Number of I/O: 35 |
товару немає в наявності |
В кошику од. на суму грн. |
CY8C5468LTI-037 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
IS26KS512S-DPBLA200 |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: HyperFlash
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-VFBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: HyperFlash
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-VFBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
товару немає в наявності
В кошику
од. на суму грн.
IS26KS256S-DPBLA200-TR |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS
Packaging: Bulk
Memory Size: 256Mbit
Memory Format: FLASH
Memory Interface: HyperBus
Memory Organization: 32M x 8
Description: IC FLASH 256MBIT HYPERBUS
Packaging: Bulk
Memory Size: 256Mbit
Memory Format: FLASH
Memory Interface: HyperBus
Memory Organization: 32M x 8
товару немає в наявності
В кошику
од. на суму грн.
CY8C6148LQI-S2F02 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
IR3513ZMTRPBF |
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Виробник: Infineon Technologies
Description: IC CTRL XPHASE3 POL 32-MLPQ
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 32-MLPQ (5x5)
Description: IC CTRL XPHASE3 POL 32-MLPQ
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 32-MLPQ (5x5)
на замовлення 150 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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100+ | 226.94 грн |
IR3505ZMTRPBF |
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Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 16-MLPQ (3x3)
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 16-MLPQ (3x3)
товару немає в наявності
В кошику
од. на суму грн.
IR3505ZMTRPBF |
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Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 16-MLPQ (3x3)
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 16-MLPQ (3x3)
товару немає в наявності
В кошику
од. на суму грн.
IR3505ZMTRPBF |
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Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Packaging: Bulk
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 16-MLPQ (3x3)
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Packaging: Bulk
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 16-MLPQ (3x3)
на замовлення 1324 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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136+ | 166.82 грн |
IR3508ZMTRPBF |
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Виробник: Infineon Technologies
Description: IC CTRL XPHASE3 20-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 28V
Applications: Processor
Current - Supply: 4mA
Supplier Device Package: 20-MLPQ (4x4)
Description: IC CTRL XPHASE3 20-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 28V
Applications: Processor
Current - Supply: 4mA
Supplier Device Package: 20-MLPQ (4x4)
товару немає в наявності
В кошику
од. на суму грн.
IR3508ZMTRPBF |
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Виробник: Infineon Technologies
Description: IC CTRL XPHASE3 20-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 28V
Applications: Processor
Current - Supply: 4mA
Supplier Device Package: 20-MLPQ (4x4)
Description: IC CTRL XPHASE3 20-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 28V
Applications: Processor
Current - Supply: 4mA
Supplier Device Package: 20-MLPQ (4x4)
товару немає в наявності
В кошику
од. на суму грн.
IR3500VMTRPBF |
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Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR VR11.1 32-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 6.5mA
Supplier Device Package: 32-MLPQ (5x5)
Description: IC XPHASE3 CTLR VR11.1 32-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 6.5mA
Supplier Device Package: 32-MLPQ (5x5)
товару немає в наявності
В кошику
од. на суму грн.
IR3500VMTRPBF |
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Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR VR11.1 32-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 6.5mA
Supplier Device Package: 32-MLPQ (5x5)
Description: IC XPHASE3 CTLR VR11.1 32-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 6.5mA
Supplier Device Package: 32-MLPQ (5x5)
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IPQC60T010S7AXTMA1 |
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Qualification: AEC-Q101
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IPQC60T010S7AXTMA1 |
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Qualification: AEC-Q101
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TLE493DP3XXMS2GOTOBO1 |
Виробник: Infineon Technologies
Description: TLE493DP3XXMS2GOTOBO1
Packaging: Box
Interface: I2C, SPI
Sensor Type: Magnetic, Hall Effect
Utilized IC / Part: TLE493D-P3B6, TLE493D-P3I8
Embedded: Yes, MCU
Description: TLE493DP3XXMS2GOTOBO1
Packaging: Box
Interface: I2C, SPI
Sensor Type: Magnetic, Hall Effect
Utilized IC / Part: TLE493D-P3B6, TLE493D-P3I8
Embedded: Yes, MCU
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4125.03 грн |
5+ | 3593.24 грн |
ISC052N03LF2SATMA1 |
Виробник: Infineon Technologies
Description: ISC052N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Description: ISC052N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
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ISC052N03LF2SATMA1 |
Виробник: Infineon Technologies
Description: ISC052N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Description: ISC052N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
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ISC033N03LF2SATMA1 |
Виробник: Infineon Technologies
Description: ISC033N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Description: ISC033N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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ISC033N03LF2SATMA1 |
Виробник: Infineon Technologies
Description: ISC033N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Description: ISC033N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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ISC028N03LF2SATMA1 |
Виробник: Infineon Technologies
Description: ISC028N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
Description: ISC028N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
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ISC028N03LF2SATMA1 |
Виробник: Infineon Technologies
Description: ISC028N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
Description: ISC028N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
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ISC023N03LF2SATMA1 |
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Виробник: Infineon Technologies
Description: ISC023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Description: ISC023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 25.25 грн |
ISC023N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISC023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Description: ISC023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 55.73 грн |
10+ | 38.40 грн |
25+ | 34.56 грн |
100+ | 28.43 грн |
250+ | 26.53 грн |
500+ | 25.37 грн |
1000+ | 24.03 грн |
2500+ | 23.04 грн |
ISC012N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISC012N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Description: ISC012N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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ISC012N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISC012N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Description: ISC012N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 4600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 69.08 грн |
10+ | 47.85 грн |
25+ | 43.18 грн |
100+ | 35.70 грн |
250+ | 33.39 грн |
500+ | 32.01 грн |
1000+ | 30.36 грн |
2500+ | 29.18 грн |
IPD023N03LF2SATMA1 |
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Виробник: Infineon Technologies
Description: IPD023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Description: IPD023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 34.89 грн |
IPD023N03LF2SATMA1 |
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Виробник: Infineon Technologies
Description: IPD023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Description: IPD023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 124.03 грн |
10+ | 75.67 грн |
100+ | 50.67 грн |
500+ | 37.49 грн |
1000+ | 34.25 грн |
IPP030N10NF2SAKMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 179A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 140µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 179A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 140µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
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BGSX24M2U16E6327XTSA1 |
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Виробник: Infineon Technologies
Description: ANTENNA DEVICES
Features: DC Blocked
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
Description: ANTENNA DEVICES
Features: DC Blocked
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
на замовлення 3490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 67.51 грн |
10+ | 55.56 грн |
25+ | 52.43 грн |
100+ | 45.08 грн |
250+ | 42.61 грн |
500+ | 40.86 грн |
1000+ | 38.57 грн |
EVALMA5342MS200WX2TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR MA5342
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±30V ~ 60V
Max Output Power x Channels @ Load: 200W x 2 @ 8Ohm
Utilized IC / Part: MA5342
Description: EVAL BOARD FOR MA5342
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±30V ~ 60V
Max Output Power x Channels @ Load: 200W x 2 @ 8Ohm
Utilized IC / Part: MA5342
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 27616.10 грн |
EVALMA5302MS200WX2TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR MA5302
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±17V ~ 32V
Max Output Power x Channels @ Load: 200W x 2 @ 2Ohm
Utilized IC / Part: MA5302
Description: EVAL BOARD FOR MA5302
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±17V ~ 32V
Max Output Power x Channels @ Load: 200W x 2 @ 2Ohm
Utilized IC / Part: MA5302
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 27616.10 грн |
IGB070S10S1XTMA1 |
Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tube
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Description: MV GAN DISCRETES
Packaging: Tube
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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S25FL064P0XBHIS30 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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S25FL064P0XMFV000 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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SK-FM0-V48-S6E1A1 |
Виробник: Infineon Technologies
Description: S6E1A1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1A1
Description: S6E1A1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1A1
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2153.18 грн |
S6E1A12B0AGN20000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 88KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 23
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 88KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 23
DigiKey Programmable: Not Verified
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S6E1A12B0AGN2B000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 88KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 23
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 88KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 23
DigiKey Programmable: Not Verified
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S6E1A11B0AGP2B000 |
Виробник: Infineon Technologies
Description: MM-LEGACY MM
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 56KB (56K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 23
Description: MM-LEGACY MM
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 56KB (56K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 23
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FM0-V48-S6E1A1 |
Виробник: Infineon Technologies
Description: S6E1A1 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1A1
Description: S6E1A1 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1A1
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CY8C4147AZE-S475 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 10/12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 10/12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 3175 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 529.86 грн |
10+ | 402.29 грн |
CY8C4125AZI-S413 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 213.51 грн |
10+ | 154.96 грн |
25+ | 142.23 грн |
80+ | 122.14 грн |
250+ | 118.84 грн |
CY8C4146LQI-S422T |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
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CY8C4146LQI-S422T |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 2165 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 239.42 грн |
10+ | 173.18 грн |
25+ | 158.74 грн |
100+ | 134.07 грн |
250+ | 126.96 грн |
500+ | 122.68 грн |
1000+ | 117.20 грн |
SI3443DV |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 4.4A MICRO6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
Description: MOSFET P-CH 20V 4.4A MICRO6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
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KITA2GTC3675VTRBTOBO1 |
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Виробник: Infineon Technologies
Description: KIT_A2G_TC367_5V_TRB
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC376
Platform: AURIX
Description: KIT_A2G_TC367_5V_TRB
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC376
Platform: AURIX
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 44536.95 грн |
XMC4200F64K256BAXQMA1 |
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Виробник: Infineon Technologies
Description: XMC4000
Packaging: Tray
Package / Case: 64-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 40K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-19
Number of I/O: 35
Description: XMC4000
Packaging: Tray
Package / Case: 64-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 40K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-19
Number of I/O: 35
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В кошику
од. на суму грн.