Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148447) > Сторінка 753 з 2475

Обрати Сторінку:   [  << Попередня Сторінка ]  1 247 494 741 748 749 750 751 752 753 754 755 756 757 758 988 1235 1482 1729 1976 2223 2470 2475  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IRG7PH35UD1-EP IRG7PH35UD1-EP Infineon Technologies IRG7PH35UD1PBF%28-EP%29.pdf Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
товару немає в наявності
В кошику  од. на суму  грн.
D1800N48TVFXPSA1 D1800N48TVFXPSA1 Infineon Technologies D1800N.pdf Description: DIODE STANDARD 4800V 1800A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1800A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+33329.30 грн
В кошику  од. на суму  грн.
CY8C4024LQS-S413 Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1 Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
товару немає в наявності
В кошику  од. на суму  грн.
CY8C4024LQS-S413T Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1 Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
товару немає в наявності
В кошику  од. на суму  грн.
CY8C4025LQSS413XQLA1 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: IC MCU 32BIT 32KB FLASH
Packaging: Tray
товару немає в наявності
В кошику  од. на суму  грн.
CY8C4025LQSS413TXUMA1 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: IC MCU 32BIT 32KB FLASH
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
FD1200R12IE4B1S1BDMA1 Infineon Technologies Infineonc09618.pdf Description: FD1200R12IE4B1S1BD - IGBT
Packaging: Bulk
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
1+85346.60 грн
В кошику  од. на суму  грн.
F3L6MR20W2M1HB70BPSA1 F3L6MR20W2M1HB70BPSA1 Infineon Technologies Infineon-FF3MR20KM1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a8bcde381a Description: F3L6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 155A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 112mA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+20767.45 грн
15+19652.46 грн
В кошику  од. на суму  грн.
FF6MR20W2M1HB70BPSA1 FF6MR20W2M1HB70BPSA1 Infineon Technologies Infineon-FF6MR12W2M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018bed1c23c84ee0 Description: FF6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 160A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 160A, 18V
Gate Charge (Qg) (Max) @ Vgs: 780nC @ 3V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 112mA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+20624.20 грн
15+19497.15 грн
В кошику  од. на суму  грн.
IM06B20AC1XKMA1 IM06B20AC1XKMA1 Infineon Technologies Description: IM06B20AC1XKMA1
Packaging: Tray
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 650 V
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
1+589.69 грн
В кошику  од. на суму  грн.
IM06B30AC1XKMA1 IM06B30AC1XKMA1 Infineon Technologies Description: IM06B30AC1XKMA1
Packaging: Tray
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 650 V
на замовлення 254 шт:
термін постачання 21-31 дні (днів)
1+693.95 грн
В кошику  од. на суму  грн.
SPOC2DBBTS710404ESATOBO1 SPOC2DBBTS710404ESATOBO1 Infineon Technologies Description: SPOC-2 DB BTS71040-4ESA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71040-4ESA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+5295.32 грн
В кошику  од. на суму  грн.
SPOC2DBBTS710404ESPTOBO1 SPOC2DBBTS710404ESPTOBO1 Infineon Technologies SPOC2DBBTS710404ESPTOBO1.pdf Description: SPOC-2 DB BTS71040-4ESP
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71040-4ESP
товару немає в наявності
В кошику  од. на суму  грн.
IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 Infineon Technologies Infineon-IGLT65R035D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bde287278 Description: IGLT65R035D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 Infineon Technologies Infineon-IGLT65R035D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bde287278 Description: IGLT65R035D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGOT65R035D2AUMA1 IGOT65R035D2AUMA1 Infineon Technologies IGOT65R035D2AUMA1.pdf Description: IGOT65R035D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGOT65R035D2AUMA1 IGOT65R035D2AUMA1 Infineon Technologies IGOT65R035D2AUMA1.pdf Description: IGOT65R035D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMBG120R040M2HXTMA1 IMBG120R040M2HXTMA1 Infineon Technologies Infineon-IMBG120R040M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d2200102020d0 Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
IMBG120R040M2HXTMA1 IMBG120R040M2HXTMA1 Infineon Technologies Infineon-IMBG120R040M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d2200102020d0 Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
на замовлення 561 шт:
термін постачання 21-31 дні (днів)
1+791.03 грн
10+525.48 грн
100+391.99 грн
500+333.25 грн
В кошику  од. на суму  грн.
IMLT65R015M2HXTMA1 IMLT65R015M2HXTMA1 Infineon Technologies Infineon-IMLT65R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e94a4608ca Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+861.76 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IMLT65R015M2HXTMA1 IMLT65R015M2HXTMA1 Infineon Technologies Infineon-IMLT65R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e94a4608ca Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 1805 шт:
термін постачання 21-31 дні (днів)
1+1224.75 грн
10+1055.70 грн
100+915.54 грн
500+793.64 грн
В кошику  од. на суму  грн.
AIMBG75R016M1HXTMA1 AIMBG75R016M1HXTMA1 Infineon Technologies Infineon-AIMBG75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae2dfed87ec0 Description: IGBT
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
AIMBG75R016M1HXTMA1 AIMBG75R016M1HXTMA1 Infineon Technologies Infineon-AIMBG75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae2dfed87ec0 Description: IGBT
Packaging: Cut Tape (CT)
на замовлення 725 шт:
термін постачання 21-31 дні (днів)
1+1721.34 грн
10+1196.10 грн
100+969.94 грн
В кошику  од. на суму  грн.
KITA2GTC3975VTRBTOBO1 KITA2GTC3975VTRBTOBO1 Infineon Technologies Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be Description: AURIX TC397 5V TRB FIXED BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX TC397 5V TRB Fixed
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+64889.52 грн
В кошику  од. на суму  грн.
KITA2GTC3645VTRBSTOBO1 KITA2GTC3645VTRBSTOBO1 Infineon Technologies Infineon-AURIX_TC36x_Addendum-DataSheet-v01_05-EN.pdf?fileId=5546d4627506bb32017546b43c8329ba Description: AURIX TC364 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC364
Platform: AURIX TC364 5V TRB Socket
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+94984.66 грн
В кошику  од. на суму  грн.
KITA2GTC3775VTRBSTOBO1 KITA2GTC3775VTRBSTOBO1 Infineon Technologies Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be Description: AURIX TC377 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC377
Platform: AURIX TC377 5V TRB Socket
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+124979.52 грн
В кошику  од. на суму  грн.
APPKITA2GSAFETYTOBO1 APPKITA2GSAFETYTOBO1 Infineon Technologies Infineon-APPKIT_A2G_SAFETY_Overview-Presentations-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ea4397e4d1130 Description: APPKITA2GSAFETYTOBO1
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+43365.26 грн
В кошику  од. на суму  грн.
KITA2GTC3895VTRBTOBO1 KITA2GTC3895VTRBTOBO1 Infineon Technologies Description: KIT_A2G_TC389_5V_TRB
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC389
Platform: AURIX
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+67593.69 грн
В кошику  од. на суму  грн.
FS100R12KT4GBOSA1 FS100R12KT4GBOSA1 Infineon Technologies Infineon-FS100R12KT4G-DS-v02_00-en_de.pdf?fileId=db3a3043156fd5730116190dc0431c81 Description: IGBT MOD 1200V 100A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
2+12295.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRFS4115-7TRL AUIRFS4115-7TRL Infineon Technologies auirfs4115-7p.pdf?fileId=5546d462533600a4015355b6c64614cb Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N03S207ATMA1 IPD50N03S207ATMA1 Infineon Technologies IPD50N03S2-07_green.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270d5a3b72 Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 17163 шт:
термін постачання 21-31 дні (днів)
313+70.47 грн
Мінімальне замовлення: 313
В кошику  од. на суму  грн.
IPI70N04S406AKSA1 IPI70N04S406AKSA1 Infineon Technologies Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t Description: MOSFET N-CH 40V 70A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
414+54.54 грн
Мінімальне замовлення: 414
В кошику  од. на суму  грн.
TLT9252VLCXUMA1 TLT9252VLCXUMA1 Infineon Technologies Infineon-TLT9252VLC-DataSheet-v01_00-EN.pdf?fileId=5546d4626e8d4b8f016ea702da5208eb Description: IC TRANSCEIVER HALF 1/1 TSON-14
Packaging: Cut Tape (CT)
Package / Case: 14-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-14-3
Receiver Hysteresis: 30 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2+191.79 грн
10+136.94 грн
25+125.19 грн
100+105.30 грн
250+99.50 грн
500+96.00 грн
1000+91.59 грн
2500+88.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C20246A-24LKXIT CY8C20246A-24LKXIT Infineon Technologies Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU PSOC 16K FLASH 2K 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
T1190N16TOFVTXPSA1 T1190N16TOFVTXPSA1 Infineon Technologies Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02 Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Bulk
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+19284.86 грн
В кошику  од. на суму  грн.
T1500N16TOFVTXPSA1 T1500N16TOFVTXPSA1 Infineon Technologies Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4 Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+22175.24 грн
В кошику  од. на суму  грн.
T1500N18TOFVTXPSA1 T1500N18TOFVTXPSA1 Infineon Technologies Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4 Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+23114.29 грн
В кошику  од. на суму  грн.
T2600N16TOFVTXPSA1 T2600N16TOFVTXPSA1 Infineon Technologies Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb Description: SCR MODULE 1.8KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
товару немає в наявності
В кошику  од. на суму  грн.
T2600N18TOFVTXPSA1 T2600N18TOFVTXPSA1 Infineon Technologies Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb Description: SCR MODULE 1.8KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
товару немає в наявності
В кошику  од. на суму  грн.
T3800N18TOFVTXPSA1 T3800N18TOFVTXPSA1 Infineon Technologies Infineon-T3800N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6e7bc7de7 Description: SCR MODULE 1.8KV 5970A TO-200AE
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Off State: 1.8 kV
товару немає в наявності
В кошику  од. на суму  грн.
IGD08N120S7ATMA1 IGD08N120S7ATMA1 Infineon Technologies Infineon-IGD08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb76e273270 Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
товару немає в наявності
В кошику  од. на суму  грн.
IGD08N120S7ATMA1 IGD08N120S7ATMA1 Infineon Technologies Infineon-IGD08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb76e273270 Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
на замовлення 338 шт:
термін постачання 21-31 дні (днів)
2+214.87 грн
10+134.26 грн
100+92.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC0605NLSATMA1 Infineon Technologies Infineon-ISC0605NLS-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185de0f390f6a9c Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB160N04S203ATMA4 IPB160N04S203ATMA4 Infineon Technologies Infineon-IPB160N04S2_03-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b97434564&ack=t Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 207282 шт:
термін постачання 21-31 дні (днів)
138+160.02 грн
Мінімальне замовлення: 138
В кошику  од. на суму  грн.
AUIRF1324STRL AUIRF1324STRL Infineon Technologies auirf1324s.pdf?fileId=5546d462533600a4015355a8b241136c Description: MOSFET N-CH 24V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IRG4IBC20WPBF IRG4IBC20WPBF Infineon Technologies irg4ibc20wpbf.pdf?fileId=5546d462533600a401535643887122b2 Description: IGBT 600V 12A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 22ns/110ns
Switching Energy: 60µJ (on), 80µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 26 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 34 W
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
392+58.66 грн
Мінімальне замовлення: 392
В кошику  од. на суму  грн.
1EDF5673KXUMA1 1EDF5673KXUMA1 Infineon Technologies Infineon-1EDF5673K-DS-v02_00-EN.pdf?fileId=5546d46266a498f50166c9b5b486226a Description: DGT ISO 1.5KV 1CH GT DVR TFLGA13
Packaging: Bulk
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 8A
Voltage - Isolation: 1500VDC
Approval Agency: CQC, CSA, UL, VDE
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 44ns, 44ns
Pulse Width Distortion (Max): 18ns (Typ)
Number of Channels: 1
Voltage - Output Supply: 3.13V ~ 3.47V
на замовлення 26086 шт:
термін постачання 21-31 дні (днів)
189+120.64 грн
Мінімальне замовлення: 189
В кошику  од. на суму  грн.
CY7C1380KV33-250AXC CY7C1380KV33-250AXC Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 2.6 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
DD104N08KAHPSA1 DD104N08KAHPSA1 Infineon Technologies DD104N.pdf Description: DIODE MOD GP 800V 104A POWRBLOK
Packaging: Bulk
Package / Case: POW-R-BLOK™ Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 104A
Supplier Device Package: POW-R-BLOK™ Module
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS4410TRLPBF IRFS4410TRLPBF Infineon Technologies irfs4410pbf.pdf?fileId=5546d462533600a40153563a29f521b0 Description: MOSFET N-CH 100V 88A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
на замовлення 842 шт:
термін постачання 21-31 дні (днів)
146+156.10 грн
Мінімальне замовлення: 146
В кошику  од. на суму  грн.
IRFH4210DTRPBF IRFH4210DTRPBF Infineon Technologies irfh4210dpbf.pdf?fileId=5546d462533600a40153561a4e871e80 Description: MOSFET N-CH 25V 44A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH4210DTRPBF IRFH4210DTRPBF Infineon Technologies irfh4210dpbf.pdf?fileId=5546d462533600a40153561a4e871e80 Description: MOSFET N-CH 25V 44A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
S29GL512T12DHN013 S29GL512T12DHN013 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GT12DHN013 S29GL01GT12DHN013 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
64-2143PBF Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
BTH500301LUAAUMA1 BTH500301LUAAUMA1 Infineon Technologies Infineon-Power_PROFET_+24_48V_PB(003).pdf-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b6c5234407f21 Description: MULTICHIP PROFET & GD
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BTH500301LUAAUMA1 BTH500301LUAAUMA1 Infineon Technologies Infineon-Power_PROFET_+24_48V_PB(003).pdf-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b6c5234407f21 Description: MULTICHIP PROFET & GD
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1943 шт:
термін постачання 21-31 дні (днів)
1+544.33 грн
10+393.44 грн
100+286.79 грн
500+228.38 грн
В кошику  од. на суму  грн.
REF60100EDPSTOBO1 REF60100EDPSTOBO1 Infineon Technologies UM103815_eDisconnect%20Power%20Switch%20for%20battery-powered%20applications.pdf Description: REF60100EDPSTOBO1
Packaging: Box
Contents: Board(s)
товару немає в наявності
В кошику  од. на суму  грн.
IAUTN08S5N012LATMA1 IAUTN08S5N012LATMA1 Infineon Technologies Infineon-IAUTN08S5N012L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef669549208cf Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1981 шт:
термін постачання 21-31 дні (днів)
1+413.03 грн
10+303.55 грн
25+280.14 грн
100+238.74 грн
250+227.22 грн
500+220.28 грн
1000+211.05 грн
В кошику  од. на суму  грн.
IAUTN08S5N012LATMA1 IAUTN08S5N012LATMA1 Infineon Technologies Infineon-IAUTN08S5N012L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef669549208cf Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Tray
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IRG7PH35UD1-EP IRG7PH35UD1PBF%28-EP%29.pdf
IRG7PH35UD1-EP
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
товару немає в наявності
В кошику  од. на суму  грн.
D1800N48TVFXPSA1 D1800N.pdf
D1800N48TVFXPSA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 4800V 1800A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1800A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+33329.30 грн
В кошику  од. на суму  грн.
CY8C4024LQS-S413 Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
товару немає в наявності
В кошику  од. на суму  грн.
CY8C4024LQS-S413T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
товару немає в наявності
В кошику  од. на суму  грн.
CY8C4025LQSS413XQLA1 Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH
Packaging: Tray
товару немає в наявності
В кошику  од. на суму  грн.
CY8C4025LQSS413TXUMA1 Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
FD1200R12IE4B1S1BDMA1 Infineonc09618.pdf
Виробник: Infineon Technologies
Description: FD1200R12IE4B1S1BD - IGBT
Packaging: Bulk
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+85346.60 грн
В кошику  од. на суму  грн.
F3L6MR20W2M1HB70BPSA1 Infineon-FF3MR20KM1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a8bcde381a
F3L6MR20W2M1HB70BPSA1
Виробник: Infineon Technologies
Description: F3L6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 155A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 112mA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+20767.45 грн
15+19652.46 грн
В кошику  од. на суму  грн.
FF6MR20W2M1HB70BPSA1 Infineon-FF6MR12W2M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018bed1c23c84ee0
FF6MR20W2M1HB70BPSA1
Виробник: Infineon Technologies
Description: FF6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 160A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 160A, 18V
Gate Charge (Qg) (Max) @ Vgs: 780nC @ 3V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 112mA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+20624.20 грн
15+19497.15 грн
В кошику  од. на суму  грн.
IM06B20AC1XKMA1
IM06B20AC1XKMA1
Виробник: Infineon Technologies
Description: IM06B20AC1XKMA1
Packaging: Tray
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 650 V
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+589.69 грн
В кошику  од. на суму  грн.
IM06B30AC1XKMA1
IM06B30AC1XKMA1
Виробник: Infineon Technologies
Description: IM06B30AC1XKMA1
Packaging: Tray
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 650 V
на замовлення 254 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+693.95 грн
В кошику  од. на суму  грн.
SPOC2DBBTS710404ESATOBO1
SPOC2DBBTS710404ESATOBO1
Виробник: Infineon Technologies
Description: SPOC-2 DB BTS71040-4ESA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71040-4ESA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5295.32 грн
В кошику  од. на суму  грн.
SPOC2DBBTS710404ESPTOBO1 SPOC2DBBTS710404ESPTOBO1.pdf
SPOC2DBBTS710404ESPTOBO1
Виробник: Infineon Technologies
Description: SPOC-2 DB BTS71040-4ESP
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71040-4ESP
товару немає в наявності
В кошику  од. на суму  грн.
IGLT65R035D2ATMA1 Infineon-IGLT65R035D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bde287278
IGLT65R035D2ATMA1
Виробник: Infineon Technologies
Description: IGLT65R035D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGLT65R035D2ATMA1 Infineon-IGLT65R035D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bde287278
IGLT65R035D2ATMA1
Виробник: Infineon Technologies
Description: IGLT65R035D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGOT65R035D2AUMA1 IGOT65R035D2AUMA1.pdf
IGOT65R035D2AUMA1
Виробник: Infineon Technologies
Description: IGOT65R035D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGOT65R035D2AUMA1 IGOT65R035D2AUMA1.pdf
IGOT65R035D2AUMA1
Виробник: Infineon Technologies
Description: IGOT65R035D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMBG120R040M2HXTMA1 Infineon-IMBG120R040M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d2200102020d0
IMBG120R040M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
IMBG120R040M2HXTMA1 Infineon-IMBG120R040M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d2200102020d0
IMBG120R040M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
на замовлення 561 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+791.03 грн
10+525.48 грн
100+391.99 грн
500+333.25 грн
В кошику  од. на суму  грн.
IMLT65R015M2HXTMA1 Infineon-IMLT65R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e94a4608ca
IMLT65R015M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+861.76 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IMLT65R015M2HXTMA1 Infineon-IMLT65R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e94a4608ca
IMLT65R015M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 1805 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1224.75 грн
10+1055.70 грн
100+915.54 грн
500+793.64 грн
В кошику  од. на суму  грн.
AIMBG75R016M1HXTMA1 Infineon-AIMBG75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae2dfed87ec0
AIMBG75R016M1HXTMA1
Виробник: Infineon Technologies
Description: IGBT
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
AIMBG75R016M1HXTMA1 Infineon-AIMBG75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae2dfed87ec0
AIMBG75R016M1HXTMA1
Виробник: Infineon Technologies
Description: IGBT
Packaging: Cut Tape (CT)
на замовлення 725 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1721.34 грн
10+1196.10 грн
100+969.94 грн
В кошику  од. на суму  грн.
KITA2GTC3975VTRBTOBO1 Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be
KITA2GTC3975VTRBTOBO1
Виробник: Infineon Technologies
Description: AURIX TC397 5V TRB FIXED BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX TC397 5V TRB Fixed
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+64889.52 грн
В кошику  од. на суму  грн.
KITA2GTC3645VTRBSTOBO1 Infineon-AURIX_TC36x_Addendum-DataSheet-v01_05-EN.pdf?fileId=5546d4627506bb32017546b43c8329ba
KITA2GTC3645VTRBSTOBO1
Виробник: Infineon Technologies
Description: AURIX TC364 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC364
Platform: AURIX TC364 5V TRB Socket
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+94984.66 грн
В кошику  од. на суму  грн.
KITA2GTC3775VTRBSTOBO1 Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be
KITA2GTC3775VTRBSTOBO1
Виробник: Infineon Technologies
Description: AURIX TC377 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC377
Platform: AURIX TC377 5V TRB Socket
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+124979.52 грн
В кошику  од. на суму  грн.
APPKITA2GSAFETYTOBO1 Infineon-APPKIT_A2G_SAFETY_Overview-Presentations-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ea4397e4d1130
APPKITA2GSAFETYTOBO1
Виробник: Infineon Technologies
Description: APPKITA2GSAFETYTOBO1
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+43365.26 грн
В кошику  од. на суму  грн.
KITA2GTC3895VTRBTOBO1
KITA2GTC3895VTRBTOBO1
Виробник: Infineon Technologies
Description: KIT_A2G_TC389_5V_TRB
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC389
Platform: AURIX
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+67593.69 грн
В кошику  од. на суму  грн.
FS100R12KT4GBOSA1 Infineon-FS100R12KT4G-DS-v02_00-en_de.pdf?fileId=db3a3043156fd5730116190dc0431c81
FS100R12KT4GBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+12295.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRFS4115-7TRL auirfs4115-7p.pdf?fileId=5546d462533600a4015355b6c64614cb
AUIRFS4115-7TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N03S207ATMA1 IPD50N03S2-07_green.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270d5a3b72
IPD50N03S207ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 17163 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
313+70.47 грн
Мінімальне замовлення: 313
В кошику  од. на суму  грн.
IPI70N04S406AKSA1 Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t
IPI70N04S406AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
414+54.54 грн
Мінімальне замовлення: 414
В кошику  од. на суму  грн.
TLT9252VLCXUMA1 Infineon-TLT9252VLC-DataSheet-v01_00-EN.pdf?fileId=5546d4626e8d4b8f016ea702da5208eb
TLT9252VLCXUMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 TSON-14
Packaging: Cut Tape (CT)
Package / Case: 14-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-14-3
Receiver Hysteresis: 30 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+191.79 грн
10+136.94 грн
25+125.19 грн
100+105.30 грн
250+99.50 грн
500+96.00 грн
1000+91.59 грн
2500+88.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C20246A-24LKXIT Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C20246A-24LKXIT
Виробник: Infineon Technologies
Description: IC MCU PSOC 16K FLASH 2K 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
T1190N16TOFVTXPSA1 Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02
T1190N16TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Bulk
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+19284.86 грн
В кошику  од. на суму  грн.
T1500N16TOFVTXPSA1 Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4
T1500N16TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+22175.24 грн
В кошику  од. на суму  грн.
T1500N18TOFVTXPSA1 Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4
T1500N18TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+23114.29 грн
В кошику  од. на суму  грн.
T2600N16TOFVTXPSA1 Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb
T2600N16TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
товару немає в наявності
В кошику  од. на суму  грн.
T2600N18TOFVTXPSA1 Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb
T2600N18TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
товару немає в наявності
В кошику  од. на суму  грн.
T3800N18TOFVTXPSA1 Infineon-T3800N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6e7bc7de7
T3800N18TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 5970A TO-200AE
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Off State: 1.8 kV
товару немає в наявності
В кошику  од. на суму  грн.
IGD08N120S7ATMA1 Infineon-IGD08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb76e273270
IGD08N120S7ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
товару немає в наявності
В кошику  од. на суму  грн.
IGD08N120S7ATMA1 Infineon-IGD08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb76e273270
IGD08N120S7ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
на замовлення 338 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+214.87 грн
10+134.26 грн
100+92.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC0605NLSATMA1 Infineon-ISC0605NLS-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185de0f390f6a9c
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB160N04S203ATMA4 Infineon-IPB160N04S2_03-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b97434564&ack=t
IPB160N04S203ATMA4
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 207282 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
138+160.02 грн
Мінімальне замовлення: 138
В кошику  од. на суму  грн.
AUIRF1324STRL auirf1324s.pdf?fileId=5546d462533600a4015355a8b241136c
AUIRF1324STRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 24V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IRG4IBC20WPBF irg4ibc20wpbf.pdf?fileId=5546d462533600a401535643887122b2
IRG4IBC20WPBF
Виробник: Infineon Technologies
Description: IGBT 600V 12A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 22ns/110ns
Switching Energy: 60µJ (on), 80µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 26 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 34 W
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
392+58.66 грн
Мінімальне замовлення: 392
В кошику  од. на суму  грн.
1EDF5673KXUMA1 Infineon-1EDF5673K-DS-v02_00-EN.pdf?fileId=5546d46266a498f50166c9b5b486226a
1EDF5673KXUMA1
Виробник: Infineon Technologies
Description: DGT ISO 1.5KV 1CH GT DVR TFLGA13
Packaging: Bulk
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 8A
Voltage - Isolation: 1500VDC
Approval Agency: CQC, CSA, UL, VDE
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 44ns, 44ns
Pulse Width Distortion (Max): 18ns (Typ)
Number of Channels: 1
Voltage - Output Supply: 3.13V ~ 3.47V
на замовлення 26086 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
189+120.64 грн
Мінімальне замовлення: 189
В кошику  од. на суму  грн.
CY7C1380KV33-250AXC download
CY7C1380KV33-250AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 2.6 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
DD104N08KAHPSA1 DD104N.pdf
DD104N08KAHPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 800V 104A POWRBLOK
Packaging: Bulk
Package / Case: POW-R-BLOK™ Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 104A
Supplier Device Package: POW-R-BLOK™ Module
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS4410TRLPBF irfs4410pbf.pdf?fileId=5546d462533600a40153563a29f521b0
IRFS4410TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 88A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
на замовлення 842 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
146+156.10 грн
Мінімальне замовлення: 146
В кошику  од. на суму  грн.
IRFH4210DTRPBF irfh4210dpbf.pdf?fileId=5546d462533600a40153561a4e871e80
IRFH4210DTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 44A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH4210DTRPBF irfh4210dpbf.pdf?fileId=5546d462533600a40153561a4e871e80
IRFH4210DTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 44A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
S29GL512T12DHN013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T12DHN013
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GT12DHN013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT12DHN013
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
64-2143PBF fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
BTH500301LUAAUMA1 Infineon-Power_PROFET_+24_48V_PB(003).pdf-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b6c5234407f21
BTH500301LUAAUMA1
Виробник: Infineon Technologies
Description: MULTICHIP PROFET & GD
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BTH500301LUAAUMA1 Infineon-Power_PROFET_+24_48V_PB(003).pdf-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b6c5234407f21
BTH500301LUAAUMA1
Виробник: Infineon Technologies
Description: MULTICHIP PROFET & GD
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1943 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+544.33 грн
10+393.44 грн
100+286.79 грн
500+228.38 грн
В кошику  од. на суму  грн.
REF60100EDPSTOBO1 UM103815_eDisconnect%20Power%20Switch%20for%20battery-powered%20applications.pdf
REF60100EDPSTOBO1
Виробник: Infineon Technologies
Description: REF60100EDPSTOBO1
Packaging: Box
Contents: Board(s)
товару немає в наявності
В кошику  од. на суму  грн.
IAUTN08S5N012LATMA1 Infineon-IAUTN08S5N012L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef669549208cf
IAUTN08S5N012LATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1981 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+413.03 грн
10+303.55 грн
25+280.14 грн
100+238.74 грн
250+227.22 грн
500+220.28 грн
1000+211.05 грн
В кошику  од. на суму  грн.
IAUTN08S5N012LATMA1 Infineon-IAUTN08S5N012L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef669549208cf
IAUTN08S5N012LATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Tray
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 247 494 741 748 749 750 751 752 753 754 755 756 757 758 988 1235 1482 1729 1976 2223 2470 2475  [ Наступна Сторінка >> ]