Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4070) > Сторінка 43 з 68
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APT75GP120JDQ3 | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 543W Technology: POWER MOS 7® Mechanical mounting: screw кількість в упаковці: 1 шт |
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APT75GT120JRDQ3 | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Technology: NPT; POWER MOS 7® Mechanical mounting: screw |
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APT75GT120JRDQ3 | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Technology: NPT; POWER MOS 7® Mechanical mounting: screw кількість в упаковці: 1 шт |
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APT75GT120JU2 | MICROCHIP (MICROSEMI) |
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APT75GT120JU3 | MICROCHIP (MICROSEMI) |
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на замовлення 9 шт: термін постачання 7-14 дні (днів) |
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APT75M50B2 | MICROCHIP (MICROSEMI) |
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APT75M50L | MICROCHIP (MICROSEMI) |
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APT77N60BC6 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 272A Power dissipation: 481W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: THT Gate charge: 260nC Kind of channel: enhanced |
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APT77N60BC6 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 272A Power dissipation: 481W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: THT Gate charge: 260nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT77N60JC3 | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 600V; 77A; ISOTOP; screw; Idm: 231A; 568W Polarisation: unipolar Drain-source voltage: 600V Drain current: 77A Pulsed drain current: 231A Power dissipation: 568W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 35mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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APT77N60JC3 | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 600V; 77A; ISOTOP; screw; Idm: 231A; 568W Polarisation: unipolar Drain-source voltage: 600V Drain current: 77A Pulsed drain current: 231A Power dissipation: 568W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 35mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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APT77N60SC6 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; D3PAK Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 272A Power dissipation: 481W Case: D3PAK Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhanced |
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APT77N60SC6 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; D3PAK Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 272A Power dissipation: 481W Case: D3PAK Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT7F100B | MICROCHIP (MICROSEMI) |
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APT7F120B | MICROCHIP (MICROSEMI) |
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APT7F120S | MICROCHIP (MICROSEMI) |
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APT7M120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 335W Technology: POWER MOS 8® Pulsed drain current: 28A Gate charge: 80nC Polarisation: unipolar Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 2.1Ω Gate-source voltage: ±30V |
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APT7M120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 335W Technology: POWER MOS 8® Pulsed drain current: 28A Gate charge: 80nC Polarisation: unipolar Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 2.1Ω Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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APT7M120S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK Mounting: SMD Pulsed drain current: 28A Power dissipation: 335W Gate charge: 80nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Case: D3PAK On-state resistance: 2.1Ω Gate-source voltage: ±30V |
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APT7M120S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK Mounting: SMD Pulsed drain current: 28A Power dissipation: 335W Gate charge: 80nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Case: D3PAK On-state resistance: 2.1Ω Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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APT8011JFLL | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 7® Power dissipation: 694W Pulsed drain current: 204A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 800V Drain current: 51A On-state resistance: 125mΩ Semiconductor structure: single transistor |
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APT8011JFLL | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 7® Power dissipation: 694W Pulsed drain current: 204A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 800V Drain current: 51A On-state resistance: 125mΩ Semiconductor structure: single transistor |
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APT8011JLL | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 7® Power dissipation: 694W Pulsed drain current: 204A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 800V Drain current: 51A On-state resistance: 110mΩ Semiconductor structure: single transistor |
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APT8011JLL | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 7® Power dissipation: 694W Pulsed drain current: 204A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 800V Drain current: 51A On-state resistance: 110mΩ Semiconductor structure: single transistor |
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APT8014JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 42A; ISOTOP; screw; Idm: 168A; 595W Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 168A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 42A On-state resistance: 0.16Ω |
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APT8014JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 42A; ISOTOP; screw; Idm: 168A; 595W Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 168A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 42A On-state resistance: 0.16Ω кількість в упаковці: 1 шт |
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APT8014JLL | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 42A; ISOTOP; screw; Idm: 168A; 595W Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 168A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 42A On-state resistance: 0.14Ω |
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APT8014JLL | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 42A; ISOTOP; screw; Idm: 168A; 595W Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 168A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 42A On-state resistance: 0.14Ω кількість в упаковці: 1 шт |
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APT8014L2FLLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX Mounting: THT Power dissipation: 893W Polarisation: unipolar Gate charge: 285nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 208A Case: TO264MAX Drain-source voltage: 800V Drain current: 52A On-state resistance: 0.16Ω Type of transistor: N-MOSFET |
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APT8014L2FLLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX Mounting: THT Power dissipation: 893W Polarisation: unipolar Gate charge: 285nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 208A Case: TO264MAX Drain-source voltage: 800V Drain current: 52A On-state resistance: 0.16Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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APT8014L2LLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX Mounting: THT Power dissipation: 893W Polarisation: unipolar Gate charge: 285nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 208A Case: TO264MAX Drain-source voltage: 800V Drain current: 52A On-state resistance: 0.14Ω Type of transistor: N-MOSFET |
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APT8014L2LLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX Mounting: THT Power dissipation: 893W Polarisation: unipolar Gate charge: 285nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 208A Case: TO264MAX Drain-source voltage: 800V Drain current: 52A On-state resistance: 0.14Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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APT8015JVFR | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W Case: ISOTOP Semiconductor structure: single transistor Mechanical mounting: screw Drain-source voltage: 800V Drain current: 44A On-state resistance: 0.15Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 176A |
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APT8015JVFR | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W Case: ISOTOP Semiconductor structure: single transistor Mechanical mounting: screw Drain-source voltage: 800V Drain current: 44A On-state resistance: 0.15Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 176A кількість в упаковці: 1 шт |
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APT8015JVR | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W Case: ISOTOP Semiconductor structure: single transistor Mechanical mounting: screw Drain-source voltage: 800V Drain current: 44A On-state resistance: 0.15Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 176A |
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APT8015JVR | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W Case: ISOTOP Semiconductor structure: single transistor Mechanical mounting: screw Drain-source voltage: 800V Drain current: 44A On-state resistance: 0.15Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 176A кількість в упаковці: 1 шт |
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APT8020B2FLLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO247MAX Case: TO247MAX Mounting: THT Power dissipation: 694W Polarisation: unipolar Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.22Ω Type of transistor: N-MOSFET |
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APT8020B2FLLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO247MAX Case: TO247MAX Mounting: THT Power dissipation: 694W Polarisation: unipolar Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.22Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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APT8020B2LLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max Case: T-Max Mounting: THT Power dissipation: 694W Polarisation: unipolar Kind of package: tube Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.2Ω Type of transistor: N-MOSFET |
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APT8020B2LLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max Case: T-Max Mounting: THT Power dissipation: 694W Polarisation: unipolar Kind of package: tube Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.2Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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APT8020JFLL | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W Case: ISOTOP Power dissipation: 520W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 33A On-state resistance: 0.22Ω |
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APT8020JFLL | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W Case: ISOTOP Power dissipation: 520W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 33A On-state resistance: 0.22Ω кількість в упаковці: 1 шт |
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APT8020JLL | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W Case: ISOTOP Power dissipation: 520W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 33A On-state resistance: 0.2Ω |
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APT8020JLL | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W Case: ISOTOP Power dissipation: 520W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 33A On-state resistance: 0.2Ω кількість в упаковці: 1 шт |
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APT8020LFLLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264 Case: TO264 Mounting: THT Power dissipation: 694W Polarisation: unipolar Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.22Ω Type of transistor: N-MOSFET |
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APT8020LFLLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264 Case: TO264 Mounting: THT Power dissipation: 694W Polarisation: unipolar Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.22Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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APT8020LLLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264 Case: TO264 Mounting: THT Power dissipation: 694W Polarisation: unipolar Kind of package: tube Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.2Ω Type of transistor: N-MOSFET |
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APT8020LLLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264 Case: TO264 Mounting: THT Power dissipation: 694W Polarisation: unipolar Kind of package: tube Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.2Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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APT8024JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W Case: ISOTOP Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.26Ω |
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APT8024JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W Case: ISOTOP Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.26Ω кількість в упаковці: 1 шт |
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APT8024JLL | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W Case: ISOTOP Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.24Ω |
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APT8024JLL | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W Case: ISOTOP Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.24Ω кількість в упаковці: 1 шт |
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APT8024LFLLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264 Case: TO264 Mounting: THT Power dissipation: 565W Polarisation: unipolar Gate charge: 160nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 124A Drain-source voltage: 800V Drain current: 31A On-state resistance: 0.26Ω Type of transistor: N-MOSFET |
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APT8024LFLLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264 Case: TO264 Mounting: THT Power dissipation: 565W Polarisation: unipolar Gate charge: 160nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 124A Drain-source voltage: 800V Drain current: 31A On-state resistance: 0.26Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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APT8030B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Case: TO247MAX Mounting: THT Kind of channel: enhanced |
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APT8030B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Case: TO247MAX Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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APT8030JVFR | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Pulsed drain current: 100A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.3Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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APT8030JVFR | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Pulsed drain current: 100A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.3Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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APT8030LVFRG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Pulsed drain current: 108A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 510nC Kind of channel: enhanced |
товар відсутній |
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APT8030LVFRG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Pulsed drain current: 108A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 510nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
APT75GP120JDQ3 |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 543W
Technology: POWER MOS 7®
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 543W
Technology: POWER MOS 7®
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
APT75GT120JRDQ3 |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT; POWER MOS 7®
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT; POWER MOS 7®
Mechanical mounting: screw
товар відсутній
APT75GT120JRDQ3 |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT; POWER MOS 7®
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT; POWER MOS 7®
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
APT75GT120JU3 |
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Виробник: MICROCHIP (MICROSEMI)
APT75GT120JU3 IGBT modules
APT75GT120JU3 IGBT modules
на замовлення 9 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3392.21 грн |
APT77N60BC6 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
товар відсутній
APT77N60BC6 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
APT77N60JC3 |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 77A; ISOTOP; screw; Idm: 231A; 568W
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77A
Pulsed drain current: 231A
Power dissipation: 568W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 35mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 77A; ISOTOP; screw; Idm: 231A; 568W
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77A
Pulsed drain current: 231A
Power dissipation: 568W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 35mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
APT77N60JC3 |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 77A; ISOTOP; screw; Idm: 231A; 568W
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77A
Pulsed drain current: 231A
Power dissipation: 568W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 35mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 77A; ISOTOP; screw; Idm: 231A; 568W
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77A
Pulsed drain current: 231A
Power dissipation: 568W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 35mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
APT77N60SC6 |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
товар відсутній
APT77N60SC6 |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
APT7M120B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 335W
Technology: POWER MOS 8®
Pulsed drain current: 28A
Gate charge: 80nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 335W
Technology: POWER MOS 8®
Pulsed drain current: 28A
Gate charge: 80nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
товар відсутній
APT7M120B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 335W
Technology: POWER MOS 8®
Pulsed drain current: 28A
Gate charge: 80nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 335W
Technology: POWER MOS 8®
Pulsed drain current: 28A
Gate charge: 80nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
APT7M120S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK
Mounting: SMD
Pulsed drain current: 28A
Power dissipation: 335W
Gate charge: 80nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: D3PAK
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK
Mounting: SMD
Pulsed drain current: 28A
Power dissipation: 335W
Gate charge: 80nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: D3PAK
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
товар відсутній
APT7M120S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK
Mounting: SMD
Pulsed drain current: 28A
Power dissipation: 335W
Gate charge: 80nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: D3PAK
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK
Mounting: SMD
Pulsed drain current: 28A
Power dissipation: 335W
Gate charge: 80nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: D3PAK
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
APT8011JFLL |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 125mΩ
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 125mΩ
Semiconductor structure: single transistor
товар відсутній
APT8011JFLL |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 125mΩ
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 125mΩ
Semiconductor structure: single transistor
товар відсутній
APT8011JLL |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 110mΩ
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 110mΩ
Semiconductor structure: single transistor
товар відсутній
APT8011JLL |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 110mΩ
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 110mΩ
Semiconductor structure: single transistor
товар відсутній
APT8014JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; screw; Idm: 168A; 595W
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 168A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 0.16Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; screw; Idm: 168A; 595W
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 168A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 0.16Ω
товар відсутній
APT8014JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; screw; Idm: 168A; 595W
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 168A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 0.16Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; screw; Idm: 168A; 595W
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 168A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 0.16Ω
кількість в упаковці: 1 шт
товар відсутній
APT8014JLL |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; screw; Idm: 168A; 595W
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 168A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 0.14Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; screw; Idm: 168A; 595W
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 168A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 0.14Ω
товар відсутній
APT8014JLL |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; screw; Idm: 168A; 595W
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 168A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 0.14Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; screw; Idm: 168A; 595W
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 168A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 0.14Ω
кількість в упаковці: 1 шт
товар відсутній
APT8014L2FLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
товар відсутній
APT8014L2FLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
APT8014L2LLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
товар відсутній
APT8014L2LLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
APT8015JVFR |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
товар відсутній
APT8015JVFR |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
кількість в упаковці: 1 шт
товар відсутній
APT8015JVR |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
товар відсутній
APT8015JVR |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
кількість в упаковці: 1 шт
товар відсутній
APT8020B2FLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO247MAX
Case: TO247MAX
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO247MAX
Case: TO247MAX
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
товар відсутній
APT8020B2FLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO247MAX
Case: TO247MAX
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO247MAX
Case: TO247MAX
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
APT8020B2LLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max
Case: T-Max
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max
Case: T-Max
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
товар відсутній
APT8020B2LLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max
Case: T-Max
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max
Case: T-Max
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
APT8020JFLL |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.22Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.22Ω
товар відсутній
APT8020JFLL |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.22Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.22Ω
кількість в упаковці: 1 шт
товар відсутній
APT8020JLL |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.2Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.2Ω
товар відсутній
APT8020JLL |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.2Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.2Ω
кількість в упаковці: 1 шт
товар відсутній
APT8020LFLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
товар відсутній
APT8020LFLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
APT8020LLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
товар відсутній
APT8020LLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
APT8024JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.26Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.26Ω
товар відсутній
APT8024JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.26Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.26Ω
кількість в упаковці: 1 шт
товар відсутній
APT8024JLL |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.24Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.24Ω
товар відсутній
APT8024JLL |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.24Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.24Ω
кількість в упаковці: 1 шт
товар відсутній
APT8024LFLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264
Case: TO264
Mounting: THT
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 160nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 124A
Drain-source voltage: 800V
Drain current: 31A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264
Case: TO264
Mounting: THT
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 160nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 124A
Drain-source voltage: 800V
Drain current: 31A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
товар відсутній
APT8024LFLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264
Case: TO264
Mounting: THT
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 160nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 124A
Drain-source voltage: 800V
Drain current: 31A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264
Case: TO264
Mounting: THT
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 160nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 124A
Drain-source voltage: 800V
Drain current: 31A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
APT8030B2VRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Case: TO247MAX
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Case: TO247MAX
Mounting: THT
Kind of channel: enhanced
товар відсутній
APT8030B2VRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Case: TO247MAX
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Case: TO247MAX
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
APT8030JVFR |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
APT8030JVFR |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
APT8030LVFRG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
товар відсутній
APT8030LVFRG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній