Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4070) > Сторінка 44 з 68
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
APT8030LVRG | MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Pulsed drain current: 108A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 510nC Kind of channel: enhanced |
товар відсутній |
|
|
|
APT8030LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Pulsed drain current: 108A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 510nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|
 |
APT8043BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; TO247-3 Mounting: THT On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Gate charge: 85nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 80A Case: TO247-3 Drain-source voltage: 800V Drain current: 20A |
товар відсутній |
|
|
|
APT8043BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; TO247-3 Mounting: THT On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Gate charge: 85nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 80A Case: TO247-3 Drain-source voltage: 800V Drain current: 20A кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
APT8043BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 403W; TO247 Mounting: THT On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Kind of package: tube Gate charge: 85nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247 Drain-source voltage: 800V Drain current: 20A |
товар відсутній |
|
|
|
APT8043BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 403W; TO247 Mounting: THT On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Kind of package: tube Gate charge: 85nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247 Drain-source voltage: 800V Drain current: 20A кількість в упаковці: 1 шт |
товар відсутній |
|
 |
APT8043SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; D3PAK Mounting: SMD Drain-source voltage: 800V Drain current: 20A On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Gate charge: 85nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 80A Case: D3PAK |
товар відсутній |
|
|
|
APT8043SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; D3PAK Mounting: SMD Drain-source voltage: 800V Drain current: 20A On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Gate charge: 85nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 80A Case: D3PAK кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
APT8052BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 60A; 298W; TO247-3 Mounting: THT Power dissipation: 298W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.52Ω Drain current: 15A Drain-source voltage: 800V Gate charge: 75nC Case: TO247-3 Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 60A |
товар відсутній |
|
|
|
APT8052BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 60A; 298W; TO247-3 Mounting: THT Power dissipation: 298W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.52Ω Drain current: 15A Drain-source voltage: 800V Gate charge: 75nC Case: TO247-3 Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 60A кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
APT8052BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 60A; 298W; TO247-3 Mounting: THT Power dissipation: 298W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.52Ω Drain current: 15A Drain-source voltage: 800V Gate charge: 75nC Case: TO247-3 Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 60A |
товар відсутній |
|
|
|
APT8052BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 60A; 298W; TO247-3 Mounting: THT Power dissipation: 298W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.52Ω Drain current: 15A Drain-source voltage: 800V Gate charge: 75nC Case: TO247-3 Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 60A кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
APT8056BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A Mounting: THT Power dissipation: 370W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.56Ω Drain current: 16A Drain-source voltage: 800V Gate charge: 275nC Case: TO247-3 Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 64A |
товар відсутній |
|
|
|
APT8056BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A Mounting: THT Power dissipation: 370W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.56Ω Drain current: 16A Drain-source voltage: 800V Gate charge: 275nC Case: TO247-3 Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 64A кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
APT8065BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: TO247-3 Mounting: THT Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A |
товар відсутній |
|
|
|
APT8065BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: TO247-3 Mounting: THT Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
APT8065BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: TO247-3 Mounting: THT Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A |
товар відсутній |
|
|
|
APT8065BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: TO247-3 Mounting: THT Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
APT8065SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: D3PAK Mounting: SMD Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A |
товар відсутній |
|
|
|
APT8065SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: D3PAK Mounting: SMD Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A кількість в упаковці: 1 шт |
товар відсутній |
|
| APT80F60J | MICROCHIP (MICROSEMI) |
APT80F60J Transistor modules MOSFET |
товар відсутній |
||
| APT80GA60B | MICROCHIP (MICROSEMI) |
APT80GA60B THT IGBT transistors |
товар відсутній |
||
|
|
APT80GA60LD40 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 80A; 625W; TO264 Technology: POWER MOS 8® Case: TO264 Mounting: THT Kind of package: tube Turn-on time: 52ns Turn-off time: 326ns Power dissipation: 625W Collector-emitter voltage: 600V Collector current: 80A Gate charge: 230nC Gate-emitter voltage: ±30V Pulsed collector current: 240A Type of transistor: IGBT |
товар відсутній |
|
|
|
APT80GA60LD40 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 80A; 625W; TO264 Technology: POWER MOS 8® Case: TO264 Mounting: THT Kind of package: tube Turn-on time: 52ns Turn-off time: 326ns Power dissipation: 625W Collector-emitter voltage: 600V Collector current: 80A Gate charge: 230nC Gate-emitter voltage: ±30V Pulsed collector current: 240A Type of transistor: IGBT кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
APT80GA90B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 625W Kind of package: tube Gate charge: 200nC Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Gate-emitter voltage: ±30V Collector current: 80A Pulsed collector current: 239A Turn-on time: 49ns Turn-off time: 320ns Type of transistor: IGBT |
товар відсутній |
|
|
|
APT80GA90B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 625W Kind of package: tube Gate charge: 200nC Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Gate-emitter voltage: ±30V Collector current: 80A Pulsed collector current: 239A Turn-on time: 49ns Turn-off time: 320ns Type of transistor: IGBT кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
APT80GA90LD40 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO264 Mounting: THT Case: TO264 Power dissipation: 625W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 200nC Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Gate-emitter voltage: ±30V Collector current: 80A Pulsed collector current: 239A Turn-on time: 49ns Turn-off time: 320ns Type of transistor: IGBT |
товар відсутній |
|
|
|
APT80GA90LD40 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO264 Mounting: THT Case: TO264 Power dissipation: 625W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 200nC Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Gate-emitter voltage: ±30V Collector current: 80A Pulsed collector current: 239A Turn-on time: 49ns Turn-off time: 320ns Type of transistor: IGBT кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
APT80GA90S | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; PT; 900V; 80A; 625W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 625W Kind of package: tube Gate charge: 200nC Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Gate-emitter voltage: ±30V Collector current: 80A Pulsed collector current: 239A Turn-on time: 49ns Turn-off time: 320ns Type of transistor: IGBT |
товар відсутній |
|
|
|
APT80GA90S | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; PT; 900V; 80A; 625W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 625W Kind of package: tube Gate charge: 200nC Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Gate-emitter voltage: ±30V Collector current: 80A Pulsed collector current: 239A Turn-on time: 49ns Turn-off time: 320ns Type of transistor: IGBT кількість в упаковці: 1 шт |
товар відсутній |
|
| APT80GP60B2G | MICROCHIP (MICROSEMI) |
APT80GP60B2G THT IGBT transistors |
товар відсутній |
||
| APT80GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 68A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 330A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
товар відсутній |
||
| APT80GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 68A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 330A Technology: POWER MOS 7®; PT Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
||
| APT80GP60JDQ3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 68A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 330A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
товар відсутній |
||
| APT80GP60JDQ3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 68A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 330A Technology: POWER MOS 7®; PT Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
||
| APT80M60J | MICROCHIP (MICROSEMI) |
APT80M60J Transistor modules MOSFET |
товар відсутній |
||
| APT84F50B2 | MICROCHIP (MICROSEMI) |
APT84F50B2 THT N channel transistors |
товар відсутній |
||
|
|
APT84F50L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 53A; Idm: 270A; 1135W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 53A Pulsed drain current: 270A Power dissipation: 1135W Case: TO264 Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 340nC Kind of channel: enhanced |
товар відсутній |
|
|
|
APT84F50L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 53A; Idm: 270A; 1135W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 53A Pulsed drain current: 270A Power dissipation: 1135W Case: TO264 Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 340nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|
| APT84M50B2 | MICROCHIP (MICROSEMI) |
APT84M50B2 THT N channel transistors |
товар відсутній |
||
| APT84M50L | MICROCHIP (MICROSEMI) |
APT84M50L THT N channel transistors |
товар відсутній |
||
|
|
APT85GR120B2 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3 Mounting: THT Power dissipation: 962W Kind of package: tube Gate charge: 0.49µC Technology: NPT Ultra Fast IGBT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 85A Pulsed collector current: 340A Turn-on time: 113ns Turn-off time: 445ns Type of transistor: IGBT |
товар відсутній |
|
|
|
APT85GR120B2 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3 Mounting: THT Power dissipation: 962W Kind of package: tube Gate charge: 0.49µC Technology: NPT Ultra Fast IGBT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 85A Pulsed collector current: 340A Turn-on time: 113ns Turn-off time: 445ns Type of transistor: IGBT кількість в упаковці: 1 шт |
товар відсутній |
|
| APT85GR120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Type of module: IGBT Application: for UPS; Inverter; motors Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Max. off-state voltage: 1.2kV Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Case: SOT227B Pulsed collector current: 340A Collector current: 85A Gate-emitter voltage: ±30V |
товар відсутній |
||
| APT85GR120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Type of module: IGBT Application: for UPS; Inverter; motors Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Max. off-state voltage: 1.2kV Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Case: SOT227B Pulsed collector current: 340A Collector current: 85A Gate-emitter voltage: ±30V кількість в упаковці: 1 шт |
товар відсутній |
||
| APT85GR120JD60 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Type of module: IGBT Application: for UPS; Inverter; motors Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Max. off-state voltage: 1.2kV Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Case: SOT227B Pulsed collector current: 340A Collector current: 85A Gate-emitter voltage: ±30V |
товар відсутній |
||
| APT85GR120JD60 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Type of module: IGBT Application: for UPS; Inverter; motors Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Max. off-state voltage: 1.2kV Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Case: SOT227B Pulsed collector current: 340A Collector current: 85A Gate-emitter voltage: ±30V кількість в упаковці: 1 шт |
товар відсутній |
||
|
|
APT85GR120L | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264 Mounting: THT Power dissipation: 962W Kind of package: tube Gate charge: 0.49µC Technology: NPT; POWER MOS 8® Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 85A Pulsed collector current: 340A Turn-on time: 113ns Turn-off time: 445ns Type of transistor: IGBT |
товар відсутній |
|
|
|
APT85GR120L | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264 Mounting: THT Power dissipation: 962W Kind of package: tube Gate charge: 0.49µC Technology: NPT; POWER MOS 8® Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 85A Pulsed collector current: 340A Turn-on time: 113ns Turn-off time: 445ns Type of transistor: IGBT кількість в упаковці: 1 шт |
товар відсутній |
|
 |
APT8DQ60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; TO220-2; 1.14÷1.4mm; FRED Application: automotive industry Mounting: THT Type of diode: rectifying Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode |
товар відсутній |
|
|
|
APT8DQ60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; TO220-2; 1.14÷1.4mm; FRED Application: automotive industry Mounting: THT Type of diode: rectifying Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode кількість в упаковці: 1 шт |
товар відсутній |
|
| APT8M100B | MICROCHIP (MICROSEMI) |
APT8M100B THT N channel transistors |
товар відсутній |
||
 |
APT90DR160HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 90A; Ifsm: 850A Leads: M4 screws Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Case: SOT227B Max. off-state voltage: 1.6kV Max. forward voltage: 1.3V Load current: 90A Max. forward impulse current: 850A |
товар відсутній |
|
|
|
APT90DR160HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 90A; Ifsm: 850A Leads: M4 screws Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Case: SOT227B Max. off-state voltage: 1.6kV Max. forward voltage: 1.3V Load current: 90A Max. forward impulse current: 850A кількість в упаковці: 1 шт |
товар відсутній |
|
| APT94N60L2C3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 94A; Idm: 282A; 833W; TO264MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 94A Pulsed drain current: 282A Power dissipation: 833W Case: TO264MAX Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 640nC Kind of channel: enhanced |
товар відсутній |
||
| APT94N60L2C3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 94A; Idm: 282A; 833W; TO264MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 94A Pulsed drain current: 282A Power dissipation: 833W Case: TO264MAX Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 640nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||
| APT94N65B2C6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 61A Pulsed drain current: 282A Power dissipation: 833W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 0.32µC Kind of channel: enhanced |
товар відсутній |
||
| APT94N65B2C6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 61A Pulsed drain current: 282A Power dissipation: 833W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 0.32µC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||
| APT95GR65B2 | MICROCHIP (MICROSEMI) |
APT95GR65B2 THT IGBT transistors |
товар відсутній |
||
|
|
APT9F100B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 37A; 337W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 337W Technology: POWER MOS 8® Pulsed drain current: 37A Gate charge: 80nC Polarisation: unipolar Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 1.6Ω Gate-source voltage: ±30V |
товар відсутній |
| APT8030LVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
товар відсутній
| APT8030LVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT8043BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; TO247-3
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: TO247-3
Drain-source voltage: 800V
Drain current: 20A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; TO247-3
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: TO247-3
Drain-source voltage: 800V
Drain current: 20A
товар відсутній
| APT8043BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; TO247-3
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: TO247-3
Drain-source voltage: 800V
Drain current: 20A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; TO247-3
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: TO247-3
Drain-source voltage: 800V
Drain current: 20A
кількість в упаковці: 1 шт
товар відсутній
| APT8043BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 403W; TO247
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 800V
Drain current: 20A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 403W; TO247
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 800V
Drain current: 20A
товар відсутній
| APT8043BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 403W; TO247
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 800V
Drain current: 20A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 403W; TO247
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 800V
Drain current: 20A
кількість в упаковці: 1 шт
товар відсутній
| APT8043SFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; D3PAK
Mounting: SMD
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: D3PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; D3PAK
Mounting: SMD
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: D3PAK
товар відсутній
| APT8043SFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; D3PAK
Mounting: SMD
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: D3PAK
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; D3PAK
Mounting: SMD
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: D3PAK
кількість в упаковці: 1 шт
товар відсутній
| APT8052BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 60A; 298W; TO247-3
Mounting: THT
Power dissipation: 298W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.52Ω
Drain current: 15A
Drain-source voltage: 800V
Gate charge: 75nC
Case: TO247-3
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 60A; 298W; TO247-3
Mounting: THT
Power dissipation: 298W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.52Ω
Drain current: 15A
Drain-source voltage: 800V
Gate charge: 75nC
Case: TO247-3
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 60A
товар відсутній
| APT8052BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 60A; 298W; TO247-3
Mounting: THT
Power dissipation: 298W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.52Ω
Drain current: 15A
Drain-source voltage: 800V
Gate charge: 75nC
Case: TO247-3
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 60A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 60A; 298W; TO247-3
Mounting: THT
Power dissipation: 298W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.52Ω
Drain current: 15A
Drain-source voltage: 800V
Gate charge: 75nC
Case: TO247-3
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 60A
кількість в упаковці: 1 шт
товар відсутній
| APT8052BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 60A; 298W; TO247-3
Mounting: THT
Power dissipation: 298W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.52Ω
Drain current: 15A
Drain-source voltage: 800V
Gate charge: 75nC
Case: TO247-3
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 60A; 298W; TO247-3
Mounting: THT
Power dissipation: 298W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.52Ω
Drain current: 15A
Drain-source voltage: 800V
Gate charge: 75nC
Case: TO247-3
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 60A
товар відсутній
| APT8052BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 60A; 298W; TO247-3
Mounting: THT
Power dissipation: 298W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.52Ω
Drain current: 15A
Drain-source voltage: 800V
Gate charge: 75nC
Case: TO247-3
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 60A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 60A; 298W; TO247-3
Mounting: THT
Power dissipation: 298W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.52Ω
Drain current: 15A
Drain-source voltage: 800V
Gate charge: 75nC
Case: TO247-3
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 60A
кількість в упаковці: 1 шт
товар відсутній
| APT8056BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A
Mounting: THT
Power dissipation: 370W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.56Ω
Drain current: 16A
Drain-source voltage: 800V
Gate charge: 275nC
Case: TO247-3
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 64A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A
Mounting: THT
Power dissipation: 370W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.56Ω
Drain current: 16A
Drain-source voltage: 800V
Gate charge: 275nC
Case: TO247-3
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 64A
товар відсутній
| APT8056BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A
Mounting: THT
Power dissipation: 370W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.56Ω
Drain current: 16A
Drain-source voltage: 800V
Gate charge: 275nC
Case: TO247-3
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 64A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A
Mounting: THT
Power dissipation: 370W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.56Ω
Drain current: 16A
Drain-source voltage: 800V
Gate charge: 275nC
Case: TO247-3
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 64A
кількість в упаковці: 1 шт
товар відсутній
| APT8065BVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
товар відсутній
| APT8065BVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
кількість в упаковці: 1 шт
товар відсутній
| APT8065BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
товар відсутній
| APT8065BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
кількість в упаковці: 1 шт
товар відсутній
| APT8065SVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: D3PAK
Mounting: SMD
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: D3PAK
Mounting: SMD
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
товар відсутній
| APT8065SVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: D3PAK
Mounting: SMD
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: D3PAK
Mounting: SMD
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
кількість в упаковці: 1 шт
товар відсутній
| APT80GA60LD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 625W; TO264
Technology: POWER MOS 8®
Case: TO264
Mounting: THT
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 326ns
Power dissipation: 625W
Collector-emitter voltage: 600V
Collector current: 80A
Gate charge: 230nC
Gate-emitter voltage: ±30V
Pulsed collector current: 240A
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 625W; TO264
Technology: POWER MOS 8®
Case: TO264
Mounting: THT
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 326ns
Power dissipation: 625W
Collector-emitter voltage: 600V
Collector current: 80A
Gate charge: 230nC
Gate-emitter voltage: ±30V
Pulsed collector current: 240A
Type of transistor: IGBT
товар відсутній
| APT80GA60LD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 625W; TO264
Technology: POWER MOS 8®
Case: TO264
Mounting: THT
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 326ns
Power dissipation: 625W
Collector-emitter voltage: 600V
Collector current: 80A
Gate charge: 230nC
Gate-emitter voltage: ±30V
Pulsed collector current: 240A
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 625W; TO264
Technology: POWER MOS 8®
Case: TO264
Mounting: THT
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 326ns
Power dissipation: 625W
Collector-emitter voltage: 600V
Collector current: 80A
Gate charge: 230nC
Gate-emitter voltage: ±30V
Pulsed collector current: 240A
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT80GA90B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Kind of package: tube
Gate charge: 200nC
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±30V
Collector current: 80A
Pulsed collector current: 239A
Turn-on time: 49ns
Turn-off time: 320ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Kind of package: tube
Gate charge: 200nC
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±30V
Collector current: 80A
Pulsed collector current: 239A
Turn-on time: 49ns
Turn-off time: 320ns
Type of transistor: IGBT
товар відсутній
| APT80GA90B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Kind of package: tube
Gate charge: 200nC
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±30V
Collector current: 80A
Pulsed collector current: 239A
Turn-on time: 49ns
Turn-off time: 320ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Kind of package: tube
Gate charge: 200nC
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±30V
Collector current: 80A
Pulsed collector current: 239A
Turn-on time: 49ns
Turn-off time: 320ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT80GA90LD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO264
Mounting: THT
Case: TO264
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 200nC
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±30V
Collector current: 80A
Pulsed collector current: 239A
Turn-on time: 49ns
Turn-off time: 320ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO264
Mounting: THT
Case: TO264
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 200nC
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±30V
Collector current: 80A
Pulsed collector current: 239A
Turn-on time: 49ns
Turn-off time: 320ns
Type of transistor: IGBT
товар відсутній
| APT80GA90LD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO264
Mounting: THT
Case: TO264
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 200nC
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±30V
Collector current: 80A
Pulsed collector current: 239A
Turn-on time: 49ns
Turn-off time: 320ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO264
Mounting: THT
Case: TO264
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 200nC
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±30V
Collector current: 80A
Pulsed collector current: 239A
Turn-on time: 49ns
Turn-off time: 320ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT80GA90S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Kind of package: tube
Gate charge: 200nC
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±30V
Collector current: 80A
Pulsed collector current: 239A
Turn-on time: 49ns
Turn-off time: 320ns
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Kind of package: tube
Gate charge: 200nC
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±30V
Collector current: 80A
Pulsed collector current: 239A
Turn-on time: 49ns
Turn-off time: 320ns
Type of transistor: IGBT
товар відсутній
| APT80GA90S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Kind of package: tube
Gate charge: 200nC
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±30V
Collector current: 80A
Pulsed collector current: 239A
Turn-on time: 49ns
Turn-off time: 320ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Kind of package: tube
Gate charge: 200nC
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±30V
Collector current: 80A
Pulsed collector current: 239A
Turn-on time: 49ns
Turn-off time: 320ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT80GP60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
товар відсутній
| APT80GP60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT80GP60JDQ3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
товар відсутній
| APT80GP60JDQ3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT84F50L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 53A; Idm: 270A; 1135W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 270A
Power dissipation: 1135W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 340nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 53A; Idm: 270A; 1135W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 270A
Power dissipation: 1135W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 340nC
Kind of channel: enhanced
товар відсутній
| APT84F50L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 53A; Idm: 270A; 1135W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 270A
Power dissipation: 1135W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 340nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 53A; Idm: 270A; 1135W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 270A
Power dissipation: 1135W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 340nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT85GR120B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3
Mounting: THT
Power dissipation: 962W
Kind of package: tube
Gate charge: 0.49µC
Technology: NPT Ultra Fast IGBT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Turn-on time: 113ns
Turn-off time: 445ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3
Mounting: THT
Power dissipation: 962W
Kind of package: tube
Gate charge: 0.49µC
Technology: NPT Ultra Fast IGBT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Turn-on time: 113ns
Turn-off time: 445ns
Type of transistor: IGBT
товар відсутній
| APT85GR120B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3
Mounting: THT
Power dissipation: 962W
Kind of package: tube
Gate charge: 0.49µC
Technology: NPT Ultra Fast IGBT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Turn-on time: 113ns
Turn-off time: 445ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3
Mounting: THT
Power dissipation: 962W
Kind of package: tube
Gate charge: 0.49µC
Technology: NPT Ultra Fast IGBT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Turn-on time: 113ns
Turn-off time: 445ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT85GR120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of module: IGBT
Application: for UPS; Inverter; motors
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of module: IGBT
Application: for UPS; Inverter; motors
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
товар відсутній
| APT85GR120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of module: IGBT
Application: for UPS; Inverter; motors
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of module: IGBT
Application: for UPS; Inverter; motors
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT85GR120JD60 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of module: IGBT
Application: for UPS; Inverter; motors
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of module: IGBT
Application: for UPS; Inverter; motors
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
товар відсутній
| APT85GR120JD60 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of module: IGBT
Application: for UPS; Inverter; motors
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of module: IGBT
Application: for UPS; Inverter; motors
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT85GR120L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264
Mounting: THT
Power dissipation: 962W
Kind of package: tube
Gate charge: 0.49µC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Turn-on time: 113ns
Turn-off time: 445ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264
Mounting: THT
Power dissipation: 962W
Kind of package: tube
Gate charge: 0.49µC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Turn-on time: 113ns
Turn-off time: 445ns
Type of transistor: IGBT
товар відсутній
| APT85GR120L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264
Mounting: THT
Power dissipation: 962W
Kind of package: tube
Gate charge: 0.49µC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Turn-on time: 113ns
Turn-off time: 445ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264
Mounting: THT
Power dissipation: 962W
Kind of package: tube
Gate charge: 0.49µC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Turn-on time: 113ns
Turn-off time: 445ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT8DQ60KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220-2; 1.14÷1.4mm; FRED
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220-2; 1.14÷1.4mm; FRED
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
товар відсутній
| APT8DQ60KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220-2; 1.14÷1.4mm; FRED
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220-2; 1.14÷1.4mm; FRED
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
кількість в упаковці: 1 шт
товар відсутній
| APT90DR160HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 90A; Ifsm: 850A
Leads: M4 screws
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 90A
Max. forward impulse current: 850A
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 90A; Ifsm: 850A
Leads: M4 screws
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 90A
Max. forward impulse current: 850A
товар відсутній
| APT90DR160HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 90A; Ifsm: 850A
Leads: M4 screws
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 90A
Max. forward impulse current: 850A
кількість в упаковці: 1 шт
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 90A; Ifsm: 850A
Leads: M4 screws
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 90A
Max. forward impulse current: 850A
кількість в упаковці: 1 шт
товар відсутній
| APT94N60L2C3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 94A; Idm: 282A; 833W; TO264MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 94A
Pulsed drain current: 282A
Power dissipation: 833W
Case: TO264MAX
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 640nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 94A; Idm: 282A; 833W; TO264MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 94A
Pulsed drain current: 282A
Power dissipation: 833W
Case: TO264MAX
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 640nC
Kind of channel: enhanced
товар відсутній
| APT94N60L2C3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 94A; Idm: 282A; 833W; TO264MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 94A
Pulsed drain current: 282A
Power dissipation: 833W
Case: TO264MAX
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 640nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 94A; Idm: 282A; 833W; TO264MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 94A
Pulsed drain current: 282A
Power dissipation: 833W
Case: TO264MAX
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 640nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT94N65B2C6 |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 61A
Pulsed drain current: 282A
Power dissipation: 833W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 0.32µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 61A
Pulsed drain current: 282A
Power dissipation: 833W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 0.32µC
Kind of channel: enhanced
товар відсутній
| APT94N65B2C6 |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 61A
Pulsed drain current: 282A
Power dissipation: 833W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 0.32µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 61A
Pulsed drain current: 282A
Power dissipation: 833W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 0.32µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT9F100B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 37A; 337W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 337W
Technology: POWER MOS 8®
Pulsed drain current: 37A
Gate charge: 80nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 1.6Ω
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 37A; 337W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 337W
Technology: POWER MOS 8®
Pulsed drain current: 37A
Gate charge: 80nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 1.6Ω
Gate-source voltage: ±30V
товар відсутній