Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4070) > Сторінка 46 з 68
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTC60VDAM45T1G | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A Technology: CoolMOS™; SJ-MOSFET Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 130A Power dissipation: 250W Case: SP1 Gate-source voltage: ±20V On-state resistance: 45mΩ Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Topology: boost chopper x2; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
||
| APTC80A10SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw Power dissipation: 416W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Case: SP4 Pulsed drain current: 168A Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 32A On-state resistance: 0.1Ω |
товар відсутній |
||
| APTC80A10SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw Power dissipation: 416W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Case: SP4 Pulsed drain current: 168A Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 32A On-state resistance: 0.1Ω кількість в упаковці: 1 шт |
товар відсутній |
||
| APTC80A15SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw Power dissipation: 277W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Case: SP4 Pulsed drain current: 112A Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω |
товар відсутній |
||
| APTC80A15SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw Power dissipation: 277W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Case: SP4 Pulsed drain current: 112A Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω кількість в упаковці: 1 шт |
товар відсутній |
||
| APTC80AM75SCG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W Power dissipation: 568W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge Case: SP6C Pulsed drain current: 232A Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 43A On-state resistance: 75mΩ |
товар відсутній |
||
| APTC80AM75SCG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W Power dissipation: 568W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge Case: SP6C Pulsed drain current: 232A Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 43A On-state resistance: 75mΩ кількість в упаковці: 1 шт |
товар відсутній |
||
| APTC80DDA15T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: boost chopper x2; NTC thermistor Case: SP3 Pulsed drain current: 110A Semiconductor structure: diode/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω |
товар відсутній |
||
| APTC80DDA15T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: boost chopper x2; NTC thermistor Case: SP3 Pulsed drain current: 110A Semiconductor structure: diode/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω кількість в упаковці: 1 шт |
товар відсутній |
||
| APTC80H15T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP1 Pulsed drain current: 110A Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω |
товар відсутній |
||
| APTC80H15T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP1 Pulsed drain current: 110A Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω кількість в упаковці: 1 шт |
товар відсутній |
||
| APTC80H15T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP3 Pulsed drain current: 110A Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω |
товар відсутній |
||
| APTC80H15T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP3 Pulsed drain current: 110A Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω кількість в упаковці: 1 шт |
товар відсутній |
||
| APTC80H29SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw Power dissipation: 156W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP4 Pulsed drain current: 60A Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 11A On-state resistance: 0.29Ω |
товар відсутній |
||
| APTC80H29SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw Power dissipation: 156W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP4 Pulsed drain current: 60A Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 11A On-state resistance: 0.29Ω кількість в упаковці: 1 шт |
товар відсутній |
||
| APTC80H29T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W Power dissipation: 156W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP3 Pulsed drain current: 60A Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 11A On-state resistance: 0.29Ω |
товар відсутній |
||
| APTC80H29T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W Power dissipation: 156W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP3 Pulsed drain current: 60A Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 11A On-state resistance: 0.29Ω кількість в упаковці: 1 шт |
товар відсутній |
||
| APTC80TA15PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™ Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Case: SP6P Pulsed drain current: 110A Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω |
товар відсутній |
||
| APTC80TA15PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™ Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Case: SP6P Pulsed drain current: 110A Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω кількість в упаковці: 1 шт |
товар відсутній |
||
| APTC80TDU15PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Case: SP6P Pulsed drain current: 110A Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω |
товар відсутній |
||
| APTC80TDU15PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Case: SP6P Pulsed drain current: 110A Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω кількість в упаковці: 1 шт |
товар відсутній |
||
| APTCV40H60CT1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 27A Case: SP1 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 83mΩ Pulsed drain current: 115A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Gate-source voltage: ±20V Mechanical mounting: screw Collector current: 50A |
товар відсутній |
||
| APTCV40H60CT1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 27A Case: SP1 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 83mΩ Pulsed drain current: 115A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Gate-source voltage: ±20V Mechanical mounting: screw Collector current: 50A |
товар відсутній |
||
| APTCV50H60T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Collector current: 50A Case: SP3 Electrical mounting: Press-in PCB Power dissipation: 290W Technology: Field Stop; SJ-MOSFET; Trench Mechanical mounting: screw Gate-source voltage: ±20V On-state resistance: 45mΩ Pulsed drain current: 130A Drain current: 38A Drain-source voltage: 600V |
товар відсутній |
||
| APTCV50H60T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Collector current: 50A Case: SP3 Electrical mounting: Press-in PCB Power dissipation: 290W Technology: Field Stop; SJ-MOSFET; Trench Mechanical mounting: screw Gate-source voltage: ±20V On-state resistance: 45mΩ Pulsed drain current: 130A Drain current: 38A Drain-source voltage: 600V кількість в упаковці: 1 шт |
товар відсутній |
||
| APTCV60HM45BC20T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP3F Gate-source voltage: ±20V Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor On-state resistance: 45mΩ Topology: boost chopper; H-bridge; NTC thermistor Pulsed drain current: 130A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Drain current: 38A Drain-source voltage: 600V |
товар відсутній |
||
| APTCV60HM45BC20T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP3F Gate-source voltage: ±20V Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor On-state resistance: 45mΩ Topology: boost chopper; H-bridge; NTC thermistor Pulsed drain current: 130A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Drain current: 38A Drain-source voltage: 600V кількість в упаковці: 1 шт |
товар відсутній |
||
| APTCV60HM45BT3G | MICROCHIP (MICROSEMI) |
APTCV60HM45BT3G Transistor modules MOSFET |
товар відсутній |
||
| APTCV60HM45RCT3G | MICROCHIP (MICROSEMI) |
APTCV60HM45RCT3G Transistor modules MOSFET |
товар відсутній |
||
| APTCV60HM45RT3G | MICROCHIP (MICROSEMI) |
APTCV60HM45RT3G Transistor modules MOSFET |
товар відсутній |
||
| APTCV60TLM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Mechanical mounting: screw Pulsed drain current: 260A Power dissipation: 462W Technology: Field Stop; SJ-MOSFET; Trench Drain current: 70A Drain-source voltage: 600V Electrical mounting: Press-in PCB Gate-source voltage: ±20V Type of module: MOSFET/IGBT transistor Semiconductor structure: diode/transistor Case: SP3F On-state resistance: 24mΩ Collector current: 75A Topology: NTC thermistor; three-level inverter; single-phase |
товар відсутній |
||
| APTCV60TLM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Mechanical mounting: screw Pulsed drain current: 260A Power dissipation: 462W Technology: Field Stop; SJ-MOSFET; Trench Drain current: 70A Drain-source voltage: 600V Electrical mounting: Press-in PCB Gate-source voltage: ±20V Type of module: MOSFET/IGBT transistor Semiconductor structure: diode/transistor Case: SP3F On-state resistance: 24mΩ Collector current: 75A Topology: NTC thermistor; three-level inverter; single-phase кількість в упаковці: 1 шт |
товар відсутній |
||
| APTCV60TLM45T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A Type of module: MOSFET/IGBT transistor On-state resistance: 45mΩ Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 130A Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 38A Collector current: 75A |
товар відсутній |
||
| APTCV60TLM45T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A Type of module: MOSFET/IGBT transistor On-state resistance: 45mΩ Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 130A Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 38A Collector current: 75A кількість в упаковці: 1 шт |
товар відсутній |
||
| APTCV60TLM70T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB Pulsed drain current: 160A Power dissipation: 250W Technology: Field Stop; SJ-MOSFET; Trench Drain current: 29A Drain-source voltage: 600V Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET/IGBT transistor Semiconductor structure: diode/transistor Case: SP3 On-state resistance: 70mΩ Collector current: 50A Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase |
товар відсутній |
||
| APTCV60TLM70T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB Pulsed drain current: 160A Power dissipation: 250W Technology: Field Stop; SJ-MOSFET; Trench Drain current: 29A Drain-source voltage: 600V Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET/IGBT transistor Semiconductor structure: diode/transistor Case: SP3 On-state resistance: 70mΩ Collector current: 50A Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase кількість в упаковці: 1 шт |
товар відсутній |
||
| APTCV60TLM99T3G | MICROCHIP (MICROSEMI) |
APTCV60TLM99T3G Transistor modules MOSFET |
товар відсутній |
||
| APTDF100H100G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A Case: SP4 Max. forward impulse current: 0.5kA Version: module Technology: FRED Mechanical mounting: screw Max. off-state voltage: 1kV Electrical mounting: FASTON connectors Load current: 100A Kind of package: bulk Type of bridge rectifier: single-phase Max. forward voltage: 2.7V |
товар відсутній |
||
| APTDF100H100G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A Case: SP4 Max. forward impulse current: 0.5kA Version: module Technology: FRED Mechanical mounting: screw Max. off-state voltage: 1kV Electrical mounting: FASTON connectors Load current: 100A Kind of package: bulk Type of bridge rectifier: single-phase Max. forward voltage: 2.7V кількість в упаковці: 1 шт |
товар відсутній |
||
| APTDF100H20G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A Case: SP4 Kind of package: bulk Max. forward impulse current: 0.5kA Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Max. off-state voltage: 200V Max. forward voltage: 1.4V Load current: 100A |
товар відсутній |
||
| APTDF100H20G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A Case: SP4 Kind of package: bulk Max. forward impulse current: 0.5kA Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Max. off-state voltage: 200V Max. forward voltage: 1.4V Load current: 100A кількість в упаковці: 1 шт |
товар відсутній |
||
| APTDF100H601G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A Case: SP1 Max. forward impulse current: 0.5kA Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Load current: 100A Kind of package: bulk Type of bridge rectifier: single-phase Max. forward voltage: 2V Version: module Technology: FRED Mechanical mounting: screw Leads: Ø1,2±0,1mm |
товар відсутній |
||
| APTDF100H601G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A Case: SP1 Max. forward impulse current: 0.5kA Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Load current: 100A Kind of package: bulk Type of bridge rectifier: single-phase Max. forward voltage: 2V Version: module Technology: FRED Mechanical mounting: screw Leads: Ø1,2±0,1mm кількість в упаковці: 1 шт |
товар відсутній |
||
| APTDF200H100G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA Kind of package: bulk Max. forward voltage: 2.7V Version: module Technology: FRED Mechanical mounting: screw Leads: M5 screws Max. off-state voltage: 1kV Electrical mounting: screw Load current: 200A Case: SP6 Type of bridge rectifier: single-phase Max. forward impulse current: 1.5kA |
товар відсутній |
||
| APTDF200H100G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA Kind of package: bulk Max. forward voltage: 2.7V Version: module Technology: FRED Mechanical mounting: screw Leads: M5 screws Max. off-state voltage: 1kV Electrical mounting: screw Load current: 200A Case: SP6 Type of bridge rectifier: single-phase Max. forward impulse current: 1.5kA кількість в упаковці: 1 шт |
товар відсутній |
||
| APTDF200H120G | MICROCHIP (MICROSEMI) |
APTDF200H120G Sing. ph. diode bridge rectif. - others |
товар відсутній |
||
| APTDF200H170G | MICROCHIP (MICROSEMI) |
APTDF200H170G Sing. ph. diode bridge rectif. - others |
товар відсутній |
||
| APTDF200H60G | MICROCHIP (MICROSEMI) |
APTDF200H60G Sing. ph. diode bridge rectif. - others |
товар відсутній |
||
| APTDF30H1201G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A Mechanical mounting: screw Leads: Ø1,2±0,1mm Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Load current: 30A Kind of package: bulk Case: SP1 Type of bridge rectifier: single-phase Max. forward impulse current: 210A Max. forward voltage: 3.2V Version: module Technology: FRED |
товар відсутній |
||
| APTDF30H1201G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A Mechanical mounting: screw Leads: Ø1,2±0,1mm Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Load current: 30A Kind of package: bulk Case: SP1 Type of bridge rectifier: single-phase Max. forward impulse current: 210A Max. forward voltage: 3.2V Version: module Technology: FRED кількість в упаковці: 1 шт |
товар відсутній |
||
| APTDF30H601G | MICROCHIP (MICROSEMI) |
APTDF30H601G Sing. ph. diode bridge rectif. - others |
товар відсутній |
||
| APTDF400AA100G | MICROCHIP (MICROSEMI) |
APTDF400AA100G Diode modules |
товар відсутній |
||
| APTDF400AA120G | MICROCHIP (MICROSEMI) |
APTDF400AA120G Diode modules |
товар відсутній |
||
| APTDF400AA170G | MICROCHIP (MICROSEMI) |
APTDF400AA170G Diode modules |
товар відсутній |
||
| APTDF400AA20G | MICROCHIP (MICROSEMI) |
APTDF400AA20G Diode modules |
товар відсутній |
||
| APTDF400AA60G | MICROCHIP (MICROSEMI) |
APTDF400AA60G Diode modules |
товар відсутній |
||
| APTDF400AK100G | MICROCHIP (MICROSEMI) |
APTDF400AK100G Diode modules |
товар відсутній |
||
| APTDF400AK120G | MICROCHIP (MICROSEMI) |
APTDF400AK120G Diode modules |
товар відсутній |
||
| APTDF400AK170G | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 1.7kV; 400A; SP6C; screw; screw; FRED Technology: FRED Case: SP6C Semiconductor structure: double series Max. off-state voltage: 1.7kV Electrical mounting: screw Mechanical mounting: screw Load current: 400A Type of module: diode |
товар відсутній |
||
| APTDF400AK170G | MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double series; 1.7kV; 400A; SP6C; screw; screw; FRED Technology: FRED Case: SP6C Semiconductor structure: double series Max. off-state voltage: 1.7kV Electrical mounting: screw Mechanical mounting: screw Load current: 400A Type of module: diode кількість в упаковці: 1 шт |
товар відсутній |
| APTC60VDAM45T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Technology: CoolMOS™; SJ-MOSFET
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 250W
Case: SP1
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Technology: CoolMOS™; SJ-MOSFET
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 250W
Case: SP1
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APTC80A10SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw
Power dissipation: 416W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Pulsed drain current: 168A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 32A
On-state resistance: 0.1Ω
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw
Power dissipation: 416W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Pulsed drain current: 168A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 32A
On-state resistance: 0.1Ω
товар відсутній
| APTC80A10SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw
Power dissipation: 416W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Pulsed drain current: 168A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 32A
On-state resistance: 0.1Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw
Power dissipation: 416W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Pulsed drain current: 168A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 32A
On-state resistance: 0.1Ω
кількість в упаковці: 1 шт
товар відсутній
| APTC80A15SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw
Power dissipation: 277W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Pulsed drain current: 112A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw
Power dissipation: 277W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Pulsed drain current: 112A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
товар відсутній
| APTC80A15SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw
Power dissipation: 277W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Pulsed drain current: 112A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw
Power dissipation: 277W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Pulsed drain current: 112A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
кількість в упаковці: 1 шт
товар відсутній
| APTC80AM75SCG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Power dissipation: 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
Pulsed drain current: 232A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 43A
On-state resistance: 75mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Power dissipation: 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
Pulsed drain current: 232A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 43A
On-state resistance: 75mΩ
товар відсутній
| APTC80AM75SCG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Power dissipation: 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
Pulsed drain current: 232A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 43A
On-state resistance: 75mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Power dissipation: 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
Pulsed drain current: 232A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 43A
On-state resistance: 75mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTC80DDA15T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
Case: SP3
Pulsed drain current: 110A
Semiconductor structure: diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
Case: SP3
Pulsed drain current: 110A
Semiconductor structure: diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
товар відсутній
| APTC80DDA15T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
Case: SP3
Pulsed drain current: 110A
Semiconductor structure: diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
Case: SP3
Pulsed drain current: 110A
Semiconductor structure: diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
кількість в упаковці: 1 шт
товар відсутній
| APTC80H15T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP1
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP1
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
товар відсутній
| APTC80H15T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP1
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP1
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
кількість в упаковці: 1 шт
товар відсутній
| APTC80H15T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
товар відсутній
| APTC80H15T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
кількість в упаковці: 1 шт
товар відсутній
| APTC80H29SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Power dissipation: 156W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP4
Pulsed drain current: 60A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Power dissipation: 156W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP4
Pulsed drain current: 60A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
товар відсутній
| APTC80H29SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Power dissipation: 156W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP4
Pulsed drain current: 60A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Power dissipation: 156W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP4
Pulsed drain current: 60A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
кількість в упаковці: 1 шт
товар відсутній
| APTC80H29T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Power dissipation: 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Pulsed drain current: 60A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Power dissipation: 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Pulsed drain current: 60A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
товар відсутній
| APTC80H29T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Power dissipation: 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Pulsed drain current: 60A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Power dissipation: 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP3
Pulsed drain current: 60A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
кількість в упаковці: 1 шт
товар відсутній
| APTC80TA15PG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Case: SP6P
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Case: SP6P
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
товар відсутній
| APTC80TA15PG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Case: SP6P
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Case: SP6P
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
кількість в упаковці: 1 шт
товар відсутній
| APTC80TDU15PG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Case: SP6P
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Case: SP6P
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
товар відсутній
| APTC80TDU15PG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Case: SP6P
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Case: SP6P
Pulsed drain current: 110A
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
кількість в упаковці: 1 шт
товар відсутній
| APTCV40H60CT1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 27A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 83mΩ
Pulsed drain current: 115A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Mechanical mounting: screw
Collector current: 50A
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 27A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 83mΩ
Pulsed drain current: 115A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Mechanical mounting: screw
Collector current: 50A
товар відсутній
| APTCV40H60CT1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 27A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 83mΩ
Pulsed drain current: 115A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Mechanical mounting: screw
Collector current: 50A
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 27A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 83mΩ
Pulsed drain current: 115A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Mechanical mounting: screw
Collector current: 50A
товар відсутній
| APTCV50H60T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Collector current: 50A
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 290W
Technology: Field Stop; SJ-MOSFET; Trench
Mechanical mounting: screw
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 130A
Drain current: 38A
Drain-source voltage: 600V
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Collector current: 50A
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 290W
Technology: Field Stop; SJ-MOSFET; Trench
Mechanical mounting: screw
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 130A
Drain current: 38A
Drain-source voltage: 600V
товар відсутній
| APTCV50H60T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Collector current: 50A
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 290W
Technology: Field Stop; SJ-MOSFET; Trench
Mechanical mounting: screw
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 130A
Drain current: 38A
Drain-source voltage: 600V
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Collector current: 50A
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 290W
Technology: Field Stop; SJ-MOSFET; Trench
Mechanical mounting: screw
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 130A
Drain current: 38A
Drain-source voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
| APTCV60HM45BC20T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
On-state resistance: 45mΩ
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Drain current: 38A
Drain-source voltage: 600V
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
On-state resistance: 45mΩ
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Drain current: 38A
Drain-source voltage: 600V
товар відсутній
| APTCV60HM45BC20T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
On-state resistance: 45mΩ
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Drain current: 38A
Drain-source voltage: 600V
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
On-state resistance: 45mΩ
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Drain current: 38A
Drain-source voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
| APTCV60HM45BT3G |
|
Виробник: MICROCHIP (MICROSEMI)
APTCV60HM45BT3G Transistor modules MOSFET
APTCV60HM45BT3G Transistor modules MOSFET
товар відсутній
| APTCV60HM45RCT3G |
|
Виробник: MICROCHIP (MICROSEMI)
APTCV60HM45RCT3G Transistor modules MOSFET
APTCV60HM45RCT3G Transistor modules MOSFET
товар відсутній
| APTCV60HM45RT3G |
|
Виробник: MICROCHIP (MICROSEMI)
APTCV60HM45RT3G Transistor modules MOSFET
APTCV60HM45RT3G Transistor modules MOSFET
товар відсутній
| APTCV60TLM24T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Mechanical mounting: screw
Pulsed drain current: 260A
Power dissipation: 462W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 70A
Drain-source voltage: 600V
Electrical mounting: Press-in PCB
Gate-source voltage: ±20V
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3F
On-state resistance: 24mΩ
Collector current: 75A
Topology: NTC thermistor; three-level inverter; single-phase
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Mechanical mounting: screw
Pulsed drain current: 260A
Power dissipation: 462W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 70A
Drain-source voltage: 600V
Electrical mounting: Press-in PCB
Gate-source voltage: ±20V
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3F
On-state resistance: 24mΩ
Collector current: 75A
Topology: NTC thermistor; three-level inverter; single-phase
товар відсутній
| APTCV60TLM24T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Mechanical mounting: screw
Pulsed drain current: 260A
Power dissipation: 462W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 70A
Drain-source voltage: 600V
Electrical mounting: Press-in PCB
Gate-source voltage: ±20V
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3F
On-state resistance: 24mΩ
Collector current: 75A
Topology: NTC thermistor; three-level inverter; single-phase
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Mechanical mounting: screw
Pulsed drain current: 260A
Power dissipation: 462W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 70A
Drain-source voltage: 600V
Electrical mounting: Press-in PCB
Gate-source voltage: ±20V
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3F
On-state resistance: 24mΩ
Collector current: 75A
Topology: NTC thermistor; three-level inverter; single-phase
кількість в упаковці: 1 шт
товар відсутній
| APTCV60TLM45T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Type of module: MOSFET/IGBT transistor
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Type of module: MOSFET/IGBT transistor
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
товар відсутній
| APTCV60TLM45T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Type of module: MOSFET/IGBT transistor
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Type of module: MOSFET/IGBT transistor
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
кількість в упаковці: 1 шт
товар відсутній
| APTCV60TLM70T3G |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB
Pulsed drain current: 160A
Power dissipation: 250W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 29A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 70mΩ
Collector current: 50A
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB
Pulsed drain current: 160A
Power dissipation: 250W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 29A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 70mΩ
Collector current: 50A
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
товар відсутній
| APTCV60TLM70T3G |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB
Pulsed drain current: 160A
Power dissipation: 250W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 29A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 70mΩ
Collector current: 50A
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB
Pulsed drain current: 160A
Power dissipation: 250W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 29A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 70mΩ
Collector current: 50A
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
кількість в упаковці: 1 шт
товар відсутній
| APTCV60TLM99T3G |
|
Виробник: MICROCHIP (MICROSEMI)
APTCV60TLM99T3G Transistor modules MOSFET
APTCV60TLM99T3G Transistor modules MOSFET
товар відсутній
| APTDF100H100G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A
Case: SP4
Max. forward impulse current: 0.5kA
Version: module
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 1kV
Electrical mounting: FASTON connectors
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2.7V
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A
Case: SP4
Max. forward impulse current: 0.5kA
Version: module
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 1kV
Electrical mounting: FASTON connectors
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2.7V
товар відсутній
| APTDF100H100G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A
Case: SP4
Max. forward impulse current: 0.5kA
Version: module
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 1kV
Electrical mounting: FASTON connectors
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2.7V
кількість в упаковці: 1 шт
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A
Case: SP4
Max. forward impulse current: 0.5kA
Version: module
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 1kV
Electrical mounting: FASTON connectors
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2.7V
кількість в упаковці: 1 шт
товар відсутній
| APTDF100H20G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A
Case: SP4
Kind of package: bulk
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Max. forward voltage: 1.4V
Load current: 100A
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A
Case: SP4
Kind of package: bulk
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Max. forward voltage: 1.4V
Load current: 100A
товар відсутній
| APTDF100H20G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A
Case: SP4
Kind of package: bulk
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Max. forward voltage: 1.4V
Load current: 100A
кількість в упаковці: 1 шт
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A
Case: SP4
Kind of package: bulk
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Max. forward voltage: 1.4V
Load current: 100A
кількість в упаковці: 1 шт
товар відсутній
| APTDF100H601G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A
Case: SP1
Max. forward impulse current: 0.5kA
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A
Case: SP1
Max. forward impulse current: 0.5kA
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
товар відсутній
| APTDF100H601G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A
Case: SP1
Max. forward impulse current: 0.5kA
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
кількість в упаковці: 1 шт
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A
Case: SP1
Max. forward impulse current: 0.5kA
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
кількість в упаковці: 1 шт
товар відсутній
| APTDF200H100G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA
Kind of package: bulk
Max. forward voltage: 2.7V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: M5 screws
Max. off-state voltage: 1kV
Electrical mounting: screw
Load current: 200A
Case: SP6
Type of bridge rectifier: single-phase
Max. forward impulse current: 1.5kA
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA
Kind of package: bulk
Max. forward voltage: 2.7V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: M5 screws
Max. off-state voltage: 1kV
Electrical mounting: screw
Load current: 200A
Case: SP6
Type of bridge rectifier: single-phase
Max. forward impulse current: 1.5kA
товар відсутній
| APTDF200H100G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA
Kind of package: bulk
Max. forward voltage: 2.7V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: M5 screws
Max. off-state voltage: 1kV
Electrical mounting: screw
Load current: 200A
Case: SP6
Type of bridge rectifier: single-phase
Max. forward impulse current: 1.5kA
кількість в упаковці: 1 шт
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA
Kind of package: bulk
Max. forward voltage: 2.7V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: M5 screws
Max. off-state voltage: 1kV
Electrical mounting: screw
Load current: 200A
Case: SP6
Type of bridge rectifier: single-phase
Max. forward impulse current: 1.5kA
кількість в упаковці: 1 шт
товар відсутній
| APTDF200H120G |
|
Виробник: MICROCHIP (MICROSEMI)
APTDF200H120G Sing. ph. diode bridge rectif. - others
APTDF200H120G Sing. ph. diode bridge rectif. - others
товар відсутній
| APTDF200H170G |
|
Виробник: MICROCHIP (MICROSEMI)
APTDF200H170G Sing. ph. diode bridge rectif. - others
APTDF200H170G Sing. ph. diode bridge rectif. - others
товар відсутній
| APTDF200H60G |
|
Виробник: MICROCHIP (MICROSEMI)
APTDF200H60G Sing. ph. diode bridge rectif. - others
APTDF200H60G Sing. ph. diode bridge rectif. - others
товар відсутній
| APTDF30H1201G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Load current: 30A
Kind of package: bulk
Case: SP1
Type of bridge rectifier: single-phase
Max. forward impulse current: 210A
Max. forward voltage: 3.2V
Version: module
Technology: FRED
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Load current: 30A
Kind of package: bulk
Case: SP1
Type of bridge rectifier: single-phase
Max. forward impulse current: 210A
Max. forward voltage: 3.2V
Version: module
Technology: FRED
товар відсутній
| APTDF30H1201G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Load current: 30A
Kind of package: bulk
Case: SP1
Type of bridge rectifier: single-phase
Max. forward impulse current: 210A
Max. forward voltage: 3.2V
Version: module
Technology: FRED
кількість в упаковці: 1 шт
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Load current: 30A
Kind of package: bulk
Case: SP1
Type of bridge rectifier: single-phase
Max. forward impulse current: 210A
Max. forward voltage: 3.2V
Version: module
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APTDF30H601G |
|
Виробник: MICROCHIP (MICROSEMI)
APTDF30H601G Sing. ph. diode bridge rectif. - others
APTDF30H601G Sing. ph. diode bridge rectif. - others
товар відсутній
| APTDF400AK170G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 400A; SP6C; screw; screw; FRED
Technology: FRED
Case: SP6C
Semiconductor structure: double series
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Mechanical mounting: screw
Load current: 400A
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 400A; SP6C; screw; screw; FRED
Technology: FRED
Case: SP6C
Semiconductor structure: double series
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Mechanical mounting: screw
Load current: 400A
Type of module: diode
товар відсутній
| APTDF400AK170G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 400A; SP6C; screw; screw; FRED
Technology: FRED
Case: SP6C
Semiconductor structure: double series
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Mechanical mounting: screw
Load current: 400A
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double series; 1.7kV; 400A; SP6C; screw; screw; FRED
Technology: FRED
Case: SP6C
Semiconductor structure: double series
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Mechanical mounting: screw
Load current: 400A
Type of module: diode
кількість в упаковці: 1 шт
товар відсутній