Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4070) > Сторінка 45 з 68
| Фото | Назва | Виробник | Інформація |
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APT9F100B | MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 37A; 337W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 337W Technology: POWER MOS 8® Pulsed drain current: 37A Gate charge: 80nC Polarisation: unipolar Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 1.6Ω Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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| APT9M100B | MICROCHIP (MICROSEMI) |
APT9M100B THT N channel transistors |
на замовлення 6 шт: термін постачання 7-14 дні (днів) |
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| APT9M100S | MICROCHIP (MICROSEMI) |
APT9M100S SMD N channel transistors |
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| APTC60AM18SCG | MICROCHIP (MICROSEMI) |
APTC60AM18SCG Transistor modules MOSFET |
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| APTC60AM24SCTG | MICROCHIP (MICROSEMI) |
APTC60AM24SCTG Transistor modules MOSFET |
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| APTC60AM24T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 70A; SP1; Ugs: ±20V; Idm: 260A Case: SP1 Power dissipation: 462W Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: MOSFET half-bridge; NTC thermistor Technology: CoolMOS™ Pulsed drain current: 260A Gate-source voltage: ±20V Type of module: MOSFET transistor Drain-source voltage: 600V Drain current: 70A On-state resistance: 24mΩ |
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| APTC60AM24T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 70A; SP1; Ugs: ±20V; Idm: 260A Case: SP1 Power dissipation: 462W Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: MOSFET half-bridge; NTC thermistor Technology: CoolMOS™ Pulsed drain current: 260A Gate-source voltage: ±20V Type of module: MOSFET transistor Drain-source voltage: 600V Drain current: 70A On-state resistance: 24mΩ |
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APTC60AM35SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 72A; SP4; FASTON connectors; 416W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 72A Case: SP4 Electrical mounting: FASTON connectors Polarisation: unipolar On-state resistance: 35mΩ Pulsed drain current: 288A Power dissipation: 416W Technology: CoolMOS™ Gate-source voltage: ±30V Mechanical mounting: screw |
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APTC60AM35SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 72A; SP4; FASTON connectors; 416W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 72A Case: SP4 Electrical mounting: FASTON connectors Polarisation: unipolar On-state resistance: 35mΩ Pulsed drain current: 288A Power dissipation: 416W Technology: CoolMOS™ Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTC60AM35T1G | MICROCHIP (MICROSEMI) |
APTC60AM35T1G Transistor modules MOSFET |
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| APTC60AM45B1G | MICROCHIP (MICROSEMI) |
APTC60AM45B1G Transistor modules MOSFET |
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| APTC60AM45BC1G | MICROCHIP (MICROSEMI) |
APTC60AM45BC1G Transistor modules MOSFET |
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| APTC60AM45T1G | MICROCHIP (MICROSEMI) |
APTC60AM45T1G Transistor modules MOSFET |
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| APTC60BBM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Technology: CoolMOS™ Drain-source voltage: 600V Drain current: 70A Pulsed drain current: 260A Power dissipation: 462W Case: SP3F Gate-source voltage: ±20V On-state resistance: 24mΩ Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Topology: buck-boost chopper; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor |
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| APTC60BBM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Technology: CoolMOS™ Drain-source voltage: 600V Drain current: 70A Pulsed drain current: 260A Power dissipation: 462W Case: SP3F Gate-source voltage: ±20V On-state resistance: 24mΩ Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Topology: buck-boost chopper; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APTC60DAM18CTG | MICROCHIP (MICROSEMI) |
APTC60DAM18CTG Transistor modules MOSFET |
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| APTC60DDAM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3; Press-in PCB; Idm: 260A Case: SP3 On-state resistance: 24mΩ Topology: boost chopper x2; NTC thermistor Technology: SJ-MOSFET Drain current: 70A Power dissipation: 462W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±20V Pulsed drain current: 260A Semiconductor structure: diode/transistor Drain-source voltage: 600V |
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| APTC60DDAM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3; Press-in PCB; Idm: 260A Case: SP3 On-state resistance: 24mΩ Topology: boost chopper x2; NTC thermistor Technology: SJ-MOSFET Drain current: 70A Power dissipation: 462W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±20V Pulsed drain current: 260A Semiconductor structure: diode/transistor Drain-source voltage: 600V кількість в упаковці: 1 шт |
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| APTC60DDAM35T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 54A; SP3; Press-in PCB; Idm: 288A Case: SP3 On-state resistance: 35mΩ Topology: boost chopper x2; NTC thermistor Technology: SJ-MOSFET Drain current: 54A Power dissipation: 416W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±20V Pulsed drain current: 288A Semiconductor structure: diode/transistor Drain-source voltage: 600V |
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| APTC60DDAM35T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 54A; SP3; Press-in PCB; Idm: 288A Case: SP3 On-state resistance: 35mΩ Topology: boost chopper x2; NTC thermistor Technology: SJ-MOSFET Drain current: 54A Power dissipation: 416W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±20V Pulsed drain current: 288A Semiconductor structure: diode/transistor Drain-source voltage: 600V кількість в упаковці: 1 шт |
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| APTC60DDAM45T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A Case: SP1 On-state resistance: 45mΩ Topology: boost chopper x2; NTC thermistor Technology: CoolMOS™; SJ-MOSFET Drain current: 38A Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±20V Pulsed drain current: 130A Semiconductor structure: diode/transistor Drain-source voltage: 600V |
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| APTC60DDAM45T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A Case: SP1 On-state resistance: 45mΩ Topology: boost chopper x2; NTC thermistor Technology: CoolMOS™; SJ-MOSFET Drain current: 38A Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±20V Pulsed drain current: 130A Semiconductor structure: diode/transistor Drain-source voltage: 600V кількість в упаковці: 1 шт |
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| APTC60DDAM70T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP1; Press-in PCB; Idm: 160A Case: SP1 On-state resistance: 70mΩ Topology: boost chopper x2; NTC thermistor Technology: CoolMOS™; SJ-MOSFET Drain current: 29A Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±20V Pulsed drain current: 160A Semiconductor structure: diode/transistor Drain-source voltage: 600V |
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| APTC60DDAM70T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP1; Press-in PCB; Idm: 160A Case: SP1 On-state resistance: 70mΩ Topology: boost chopper x2; NTC thermistor Technology: CoolMOS™; SJ-MOSFET Drain current: 29A Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±20V Pulsed drain current: 160A Semiconductor structure: diode/transistor Drain-source voltage: 600V кількість в упаковці: 1 шт |
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| APTC60DHM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 70A Case: SP3F Topology: asymmetrical bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 24mΩ Pulsed drain current: 260A Power dissipation: 462W Technology: SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
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| APTC60DHM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 70A Case: SP3F Topology: asymmetrical bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 24mΩ Pulsed drain current: 260A Power dissipation: 462W Technology: SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTC60DSKM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 70A Case: SP3F Topology: boost chopper x2; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 24mΩ Pulsed drain current: 260A Power dissipation: 462W Technology: SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
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| APTC60DSKM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 70A Case: SP3F Topology: boost chopper x2; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 24mΩ Pulsed drain current: 260A Power dissipation: 462W Technology: SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTC60HM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 70A; SP3F; Press-in PCB; 462W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 70A Case: SP3F Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 24mΩ Pulsed drain current: 260A Power dissipation: 462W Technology: SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
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| APTC60HM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 70A; SP3F; Press-in PCB; 462W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 70A Case: SP3F Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 24mΩ Pulsed drain current: 260A Power dissipation: 462W Technology: SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTC60HM35T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP3F; Press-in PCB; 416W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A Case: SP3F Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 35mΩ Pulsed drain current: 200A Power dissipation: 416W Technology: SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
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| APTC60HM35T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP3F; Press-in PCB; 416W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A Case: SP3F Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 35mΩ Pulsed drain current: 200A Power dissipation: 416W Technology: SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTC60HM45SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP4; Idm: 130A; 250W; screw Type of module: MOSFET transistor Case: SP4 Semiconductor structure: SiC diode/transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 45mΩ Power dissipation: 250W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±20V Topology: H-bridge; NTC thermistor Pulsed drain current: 130A |
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| APTC60HM45SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP4; Idm: 130A; 250W; screw Type of module: MOSFET transistor Case: SP4 Semiconductor structure: SiC diode/transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 45mΩ Power dissipation: 250W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±20V Topology: H-bridge; NTC thermistor Pulsed drain current: 130A кількість в упаковці: 1 шт |
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| APTC60HM45T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 38A; SP1; Press-in PCB; 250W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 38A Case: SP1 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 45mΩ Pulsed drain current: 130A Power dissipation: 250W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
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| APTC60HM45T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 38A; SP1; Press-in PCB; 250W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 38A Case: SP1 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 45mΩ Pulsed drain current: 130A Power dissipation: 250W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTC60HM70BT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A Power dissipation: 250W Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 29A On-state resistance: 70mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™ Gate-source voltage: ±20V Topology: boost chopper; NTC thermistor Pulsed drain current: 160A |
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| APTC60HM70BT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A Power dissipation: 250W Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 29A On-state resistance: 70mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™ Gate-source voltage: ±20V Topology: boost chopper; NTC thermistor Pulsed drain current: 160A кількість в упаковці: 1 шт |
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| APTC60HM70RT3G | MICROCHIP (MICROSEMI) |
APTC60HM70RT3G Transistor modules MOSFET |
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| APTC60HM70SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 29A; SP4; Ugs: ±20V; Idm: 160A Semiconductor structure: SiC diode/transistor Case: SP4 Power dissipation: 250W Technology: CoolMOS™; SiC; SJ-MOSFET Pulsed drain current: 160A Gate-source voltage: ±20V Type of module: MOSFET transistor Drain-source voltage: 600V Drain current: 29A On-state resistance: 70mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: H-bridge; NTC thermistor |
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| APTC60HM70SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 29A; SP4; Ugs: ±20V; Idm: 160A Semiconductor structure: SiC diode/transistor Case: SP4 Power dissipation: 250W Technology: CoolMOS™; SiC; SJ-MOSFET Pulsed drain current: 160A Gate-source voltage: ±20V Type of module: MOSFET transistor Drain-source voltage: 600V Drain current: 29A On-state resistance: 70mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: H-bridge; NTC thermistor |
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| APTC60HM70T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 29A; SP1; Press-in PCB; 250W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 29A Case: SP1 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 70mΩ Pulsed drain current: 160A Power dissipation: 250W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
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| APTC60HM70T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 29A; SP1; Press-in PCB; 250W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 29A Case: SP1 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 70mΩ Pulsed drain current: 160A Power dissipation: 250W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTC60HM70T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 29A; SP3; Press-in PCB; 250W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 29A Case: SP3 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 70mΩ Pulsed drain current: 160A Power dissipation: 250W Technology: SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
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| APTC60HM70T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 29A; SP3; Press-in PCB; 250W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 29A Case: SP3 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 70mΩ Pulsed drain current: 160A Power dissipation: 250W Technology: SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTC60SKM24CT1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 70A; SP1; Press-in PCB; 462W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 600V Drain current: 70A On-state resistance: 24mΩ Power dissipation: 462W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC; SJ-MOSFET Gate-source voltage: ±20V Topology: buck chopper; NTC thermistor Pulsed drain current: 260A Case: SP1 |
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| APTC60SKM24CT1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 70A; SP1; Press-in PCB; 462W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 600V Drain current: 70A On-state resistance: 24mΩ Power dissipation: 462W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC; SJ-MOSFET Gate-source voltage: ±20V Topology: buck chopper; NTC thermistor Pulsed drain current: 260A Case: SP1 кількість в упаковці: 1 шт |
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| APTC60SKM24T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP1; Press-in PCB; Idm: 260A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 70A On-state resistance: 24mΩ Power dissipation: 462W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Topology: buck chopper; NTC thermistor Pulsed drain current: 260A Case: SP1 |
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| APTC60SKM24T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP1; Press-in PCB; Idm: 260A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 70A On-state resistance: 24mΩ Power dissipation: 462W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Topology: buck chopper; NTC thermistor Pulsed drain current: 260A Case: SP1 кількість в упаковці: 1 шт |
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| APTC60TAM21SCTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 600V Drain current: 87A Case: SP6P Topology: MOSFET x3 half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 21mΩ Pulsed drain current: 400A Power dissipation: 625W Technology: CoolMOS™; SiC Gate-source voltage: ±20V Mechanical mounting: screw |
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| APTC60TAM21SCTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 600V Drain current: 87A Case: SP6P Topology: MOSFET x3 half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 21mΩ Pulsed drain current: 400A Power dissipation: 625W Technology: CoolMOS™; SiC Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
||||||||
| APTC60TAM24TPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 70A; SP6P; Press-in PCB; 462W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 70A Case: SP6P Topology: MOSFET x3 half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 24mΩ Pulsed drain current: 260A Power dissipation: 462W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
товар відсутній |
||||||||
| APTC60TAM24TPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 70A; SP6P; Press-in PCB; 462W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 70A Case: SP6P Topology: MOSFET x3 half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 24mΩ Pulsed drain current: 260A Power dissipation: 462W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
||||||||
| APTC60TAM35PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A Case: SP6P Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 35mΩ Pulsed drain current: 200A Power dissipation: 416W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
товар відсутній |
||||||||
| APTC60TAM35PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A Case: SP6P Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 35mΩ Pulsed drain current: 200A Power dissipation: 416W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
||||||||
| APTC60TDUM35PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A Case: SP6P Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 35mΩ Pulsed drain current: 200A Power dissipation: 416W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
товар відсутній |
||||||||
| APTC60TDUM35PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A Case: SP6P Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 35mΩ Pulsed drain current: 200A Power dissipation: 416W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
||||||||
| APTC60VDAM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Technology: SJ-MOSFET Drain-source voltage: 600V Drain current: 70A Pulsed drain current: 260A Power dissipation: 462W Case: SP3F Gate-source voltage: ±20V On-state resistance: 24mΩ Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Topology: boost chopper x2; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
||||||||
| APTC60VDAM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Technology: SJ-MOSFET Drain-source voltage: 600V Drain current: 70A Pulsed drain current: 260A Power dissipation: 462W Case: SP3F Gate-source voltage: ±20V On-state resistance: 24mΩ Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Topology: boost chopper x2; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
||||||||
| APTC60VDAM45T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A Technology: CoolMOS™; SJ-MOSFET Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 130A Power dissipation: 250W Case: SP1 Gate-source voltage: ±20V On-state resistance: 45mΩ Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Topology: boost chopper x2; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
| APT9F100B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 37A; 337W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 337W
Technology: POWER MOS 8®
Pulsed drain current: 37A
Gate charge: 80nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 1.6Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 37A; 337W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 337W
Technology: POWER MOS 8®
Pulsed drain current: 37A
Gate charge: 80nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 1.6Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT9M100B |
|
Виробник: MICROCHIP (MICROSEMI)
APT9M100B THT N channel transistors
APT9M100B THT N channel transistors
на замовлення 6 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 603.8 грн |
| 3+ | 447.17 грн |
| 7+ | 422.43 грн |
| APTC60AM18SCG |
|
Виробник: MICROCHIP (MICROSEMI)
APTC60AM18SCG Transistor modules MOSFET
APTC60AM18SCG Transistor modules MOSFET
товар відсутній
| APTC60AM24SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
APTC60AM24SCTG Transistor modules MOSFET
APTC60AM24SCTG Transistor modules MOSFET
товар відсутній
| APTC60AM24T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP1; Ugs: ±20V; Idm: 260A
Case: SP1
Power dissipation: 462W
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
Technology: CoolMOS™
Pulsed drain current: 260A
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP1; Ugs: ±20V; Idm: 260A
Case: SP1
Power dissipation: 462W
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
Technology: CoolMOS™
Pulsed drain current: 260A
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
товар відсутній
| APTC60AM24T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP1; Ugs: ±20V; Idm: 260A
Case: SP1
Power dissipation: 462W
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
Technology: CoolMOS™
Pulsed drain current: 260A
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP1; Ugs: ±20V; Idm: 260A
Case: SP1
Power dissipation: 462W
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
Technology: CoolMOS™
Pulsed drain current: 260A
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
товар відсутній
| APTC60AM35SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 72A; SP4; FASTON connectors; 416W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 72A
Case: SP4
Electrical mounting: FASTON connectors
Polarisation: unipolar
On-state resistance: 35mΩ
Pulsed drain current: 288A
Power dissipation: 416W
Technology: CoolMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 72A; SP4; FASTON connectors; 416W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 72A
Case: SP4
Electrical mounting: FASTON connectors
Polarisation: unipolar
On-state resistance: 35mΩ
Pulsed drain current: 288A
Power dissipation: 416W
Technology: CoolMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTC60AM35SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 72A; SP4; FASTON connectors; 416W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 72A
Case: SP4
Electrical mounting: FASTON connectors
Polarisation: unipolar
On-state resistance: 35mΩ
Pulsed drain current: 288A
Power dissipation: 416W
Technology: CoolMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 72A; SP4; FASTON connectors; 416W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 72A
Case: SP4
Electrical mounting: FASTON connectors
Polarisation: unipolar
On-state resistance: 35mΩ
Pulsed drain current: 288A
Power dissipation: 416W
Technology: CoolMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTC60AM35T1G |
|
Виробник: MICROCHIP (MICROSEMI)
APTC60AM35T1G Transistor modules MOSFET
APTC60AM35T1G Transistor modules MOSFET
товар відсутній
| APTC60AM45B1G |
|
Виробник: MICROCHIP (MICROSEMI)
APTC60AM45B1G Transistor modules MOSFET
APTC60AM45B1G Transistor modules MOSFET
товар відсутній
| APTC60AM45BC1G |
|
Виробник: MICROCHIP (MICROSEMI)
APTC60AM45BC1G Transistor modules MOSFET
APTC60AM45BC1G Transistor modules MOSFET
товар відсутній
| APTC60AM45T1G |
|
Виробник: MICROCHIP (MICROSEMI)
APTC60AM45T1G Transistor modules MOSFET
APTC60AM45T1G Transistor modules MOSFET
товар відсутній
| APTC60BBM24T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Technology: CoolMOS™
Drain-source voltage: 600V
Drain current: 70A
Pulsed drain current: 260A
Power dissipation: 462W
Case: SP3F
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: buck-boost chopper; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Technology: CoolMOS™
Drain-source voltage: 600V
Drain current: 70A
Pulsed drain current: 260A
Power dissipation: 462W
Case: SP3F
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: buck-boost chopper; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APTC60BBM24T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Technology: CoolMOS™
Drain-source voltage: 600V
Drain current: 70A
Pulsed drain current: 260A
Power dissipation: 462W
Case: SP3F
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: buck-boost chopper; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Technology: CoolMOS™
Drain-source voltage: 600V
Drain current: 70A
Pulsed drain current: 260A
Power dissipation: 462W
Case: SP3F
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: buck-boost chopper; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APTC60DAM18CTG |
|
Виробник: MICROCHIP (MICROSEMI)
APTC60DAM18CTG Transistor modules MOSFET
APTC60DAM18CTG Transistor modules MOSFET
товар відсутній
| APTC60DDAM24T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3; Press-in PCB; Idm: 260A
Case: SP3
On-state resistance: 24mΩ
Topology: boost chopper x2; NTC thermistor
Technology: SJ-MOSFET
Drain current: 70A
Power dissipation: 462W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 260A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3; Press-in PCB; Idm: 260A
Case: SP3
On-state resistance: 24mΩ
Topology: boost chopper x2; NTC thermistor
Technology: SJ-MOSFET
Drain current: 70A
Power dissipation: 462W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 260A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
товар відсутній
| APTC60DDAM24T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3; Press-in PCB; Idm: 260A
Case: SP3
On-state resistance: 24mΩ
Topology: boost chopper x2; NTC thermistor
Technology: SJ-MOSFET
Drain current: 70A
Power dissipation: 462W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 260A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3; Press-in PCB; Idm: 260A
Case: SP3
On-state resistance: 24mΩ
Topology: boost chopper x2; NTC thermistor
Technology: SJ-MOSFET
Drain current: 70A
Power dissipation: 462W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 260A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
| APTC60DDAM35T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 54A; SP3; Press-in PCB; Idm: 288A
Case: SP3
On-state resistance: 35mΩ
Topology: boost chopper x2; NTC thermistor
Technology: SJ-MOSFET
Drain current: 54A
Power dissipation: 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 288A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 54A; SP3; Press-in PCB; Idm: 288A
Case: SP3
On-state resistance: 35mΩ
Topology: boost chopper x2; NTC thermistor
Technology: SJ-MOSFET
Drain current: 54A
Power dissipation: 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 288A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
товар відсутній
| APTC60DDAM35T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 54A; SP3; Press-in PCB; Idm: 288A
Case: SP3
On-state resistance: 35mΩ
Topology: boost chopper x2; NTC thermistor
Technology: SJ-MOSFET
Drain current: 54A
Power dissipation: 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 288A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 54A; SP3; Press-in PCB; Idm: 288A
Case: SP3
On-state resistance: 35mΩ
Topology: boost chopper x2; NTC thermistor
Technology: SJ-MOSFET
Drain current: 54A
Power dissipation: 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 288A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
| APTC60DDAM45T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Case: SP1
On-state resistance: 45mΩ
Topology: boost chopper x2; NTC thermistor
Technology: CoolMOS™; SJ-MOSFET
Drain current: 38A
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 130A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Case: SP1
On-state resistance: 45mΩ
Topology: boost chopper x2; NTC thermistor
Technology: CoolMOS™; SJ-MOSFET
Drain current: 38A
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 130A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
товар відсутній
| APTC60DDAM45T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Case: SP1
On-state resistance: 45mΩ
Topology: boost chopper x2; NTC thermistor
Technology: CoolMOS™; SJ-MOSFET
Drain current: 38A
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 130A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Case: SP1
On-state resistance: 45mΩ
Topology: boost chopper x2; NTC thermistor
Technology: CoolMOS™; SJ-MOSFET
Drain current: 38A
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 130A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
| APTC60DDAM70T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP1; Press-in PCB; Idm: 160A
Case: SP1
On-state resistance: 70mΩ
Topology: boost chopper x2; NTC thermistor
Technology: CoolMOS™; SJ-MOSFET
Drain current: 29A
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 160A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP1; Press-in PCB; Idm: 160A
Case: SP1
On-state resistance: 70mΩ
Topology: boost chopper x2; NTC thermistor
Technology: CoolMOS™; SJ-MOSFET
Drain current: 29A
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 160A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
товар відсутній
| APTC60DDAM70T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP1; Press-in PCB; Idm: 160A
Case: SP1
On-state resistance: 70mΩ
Topology: boost chopper x2; NTC thermistor
Technology: CoolMOS™; SJ-MOSFET
Drain current: 29A
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 160A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP1; Press-in PCB; Idm: 160A
Case: SP1
On-state resistance: 70mΩ
Topology: boost chopper x2; NTC thermistor
Technology: CoolMOS™; SJ-MOSFET
Drain current: 29A
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±20V
Pulsed drain current: 160A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
| APTC60DHM24T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP3F
Topology: asymmetrical bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP3F
Topology: asymmetrical bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| APTC60DHM24T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP3F
Topology: asymmetrical bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP3F
Topology: asymmetrical bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTC60DSKM24T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP3F
Topology: boost chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP3F
Topology: boost chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| APTC60DSKM24T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP3F
Topology: boost chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP3F
Topology: boost chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTC60HM24T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP3F; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP3F; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| APTC60HM24T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP3F; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP3F; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTC60HM35T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP3F; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP3F; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| APTC60HM35T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP3F; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP3F; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTC60HM45SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP4; Idm: 130A; 250W; screw
Type of module: MOSFET transistor
Case: SP4
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±20V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 130A
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP4; Idm: 130A; 250W; screw
Type of module: MOSFET transistor
Case: SP4
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±20V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 130A
товар відсутній
| APTC60HM45SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP4; Idm: 130A; 250W; screw
Type of module: MOSFET transistor
Case: SP4
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±20V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 130A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP4; Idm: 130A; 250W; screw
Type of module: MOSFET transistor
Case: SP4
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±20V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 130A
кількість в упаковці: 1 шт
товар відсутній
| APTC60HM45T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP1; Press-in PCB; 250W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 38A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 45mΩ
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP1; Press-in PCB; 250W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 38A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 45mΩ
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| APTC60HM45T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP1; Press-in PCB; 250W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 38A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 45mΩ
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP1; Press-in PCB; 250W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 38A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 45mΩ
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTC60HM70BT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A
Power dissipation: 250W
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 29A
On-state resistance: 70mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™
Gate-source voltage: ±20V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 160A
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A
Power dissipation: 250W
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 29A
On-state resistance: 70mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™
Gate-source voltage: ±20V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 160A
товар відсутній
| APTC60HM70BT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A
Power dissipation: 250W
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 29A
On-state resistance: 70mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™
Gate-source voltage: ±20V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 160A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A
Power dissipation: 250W
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 29A
On-state resistance: 70mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™
Gate-source voltage: ±20V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 160A
кількість в упаковці: 1 шт
товар відсутній
| APTC60HM70RT3G |
|
Виробник: MICROCHIP (MICROSEMI)
APTC60HM70RT3G Transistor modules MOSFET
APTC60HM70RT3G Transistor modules MOSFET
товар відсутній
| APTC60HM70SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 29A; SP4; Ugs: ±20V; Idm: 160A
Semiconductor structure: SiC diode/transistor
Case: SP4
Power dissipation: 250W
Technology: CoolMOS™; SiC; SJ-MOSFET
Pulsed drain current: 160A
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 29A
On-state resistance: 70mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: H-bridge; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 29A; SP4; Ugs: ±20V; Idm: 160A
Semiconductor structure: SiC diode/transistor
Case: SP4
Power dissipation: 250W
Technology: CoolMOS™; SiC; SJ-MOSFET
Pulsed drain current: 160A
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 29A
On-state resistance: 70mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: H-bridge; NTC thermistor
товар відсутній
| APTC60HM70SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 29A; SP4; Ugs: ±20V; Idm: 160A
Semiconductor structure: SiC diode/transistor
Case: SP4
Power dissipation: 250W
Technology: CoolMOS™; SiC; SJ-MOSFET
Pulsed drain current: 160A
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 29A
On-state resistance: 70mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: H-bridge; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 29A; SP4; Ugs: ±20V; Idm: 160A
Semiconductor structure: SiC diode/transistor
Case: SP4
Power dissipation: 250W
Technology: CoolMOS™; SiC; SJ-MOSFET
Pulsed drain current: 160A
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 29A
On-state resistance: 70mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: H-bridge; NTC thermistor
товар відсутній
| APTC60HM70T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 29A; SP1; Press-in PCB; 250W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 29A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 70mΩ
Pulsed drain current: 160A
Power dissipation: 250W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 29A; SP1; Press-in PCB; 250W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 29A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 70mΩ
Pulsed drain current: 160A
Power dissipation: 250W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| APTC60HM70T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 29A; SP1; Press-in PCB; 250W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 29A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 70mΩ
Pulsed drain current: 160A
Power dissipation: 250W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 29A; SP1; Press-in PCB; 250W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 29A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 70mΩ
Pulsed drain current: 160A
Power dissipation: 250W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTC60HM70T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 29A; SP3; Press-in PCB; 250W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 29A
Case: SP3
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 70mΩ
Pulsed drain current: 160A
Power dissipation: 250W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 29A; SP3; Press-in PCB; 250W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 29A
Case: SP3
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 70mΩ
Pulsed drain current: 160A
Power dissipation: 250W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| APTC60HM70T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 29A; SP3; Press-in PCB; 250W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 29A
Case: SP3
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 70mΩ
Pulsed drain current: 160A
Power dissipation: 250W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 29A; SP3; Press-in PCB; 250W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 29A
Case: SP3
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 70mΩ
Pulsed drain current: 160A
Power dissipation: 250W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTC60SKM24CT1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 70A; SP1; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Power dissipation: 462W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC; SJ-MOSFET
Gate-source voltage: ±20V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 260A
Case: SP1
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 70A; SP1; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Power dissipation: 462W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC; SJ-MOSFET
Gate-source voltage: ±20V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 260A
Case: SP1
товар відсутній
| APTC60SKM24CT1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 70A; SP1; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Power dissipation: 462W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC; SJ-MOSFET
Gate-source voltage: ±20V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 260A
Case: SP1
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 70A; SP1; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Power dissipation: 462W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC; SJ-MOSFET
Gate-source voltage: ±20V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 260A
Case: SP1
кількість в упаковці: 1 шт
товар відсутній
| APTC60SKM24T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP1; Press-in PCB; Idm: 260A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Power dissipation: 462W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 260A
Case: SP1
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP1; Press-in PCB; Idm: 260A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Power dissipation: 462W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 260A
Case: SP1
товар відсутній
| APTC60SKM24T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP1; Press-in PCB; Idm: 260A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Power dissipation: 462W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 260A
Case: SP1
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP1; Press-in PCB; Idm: 260A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Power dissipation: 462W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 260A
Case: SP1
кількість в упаковці: 1 шт
товар відсутній
| APTC60TAM21SCTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 87A
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 400A
Power dissipation: 625W
Technology: CoolMOS™; SiC
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 87A
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 400A
Power dissipation: 625W
Technology: CoolMOS™; SiC
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| APTC60TAM21SCTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 87A
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 400A
Power dissipation: 625W
Technology: CoolMOS™; SiC
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 87A
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 400A
Power dissipation: 625W
Technology: CoolMOS™; SiC
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTC60TAM24TPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP6P; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP6P; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| APTC60TAM24TPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP6P; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP6P; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTC60TAM35PG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| APTC60TAM35PG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTC60TDUM35PG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| APTC60TDUM35PG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTC60VDAM24T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Technology: SJ-MOSFET
Drain-source voltage: 600V
Drain current: 70A
Pulsed drain current: 260A
Power dissipation: 462W
Case: SP3F
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Technology: SJ-MOSFET
Drain-source voltage: 600V
Drain current: 70A
Pulsed drain current: 260A
Power dissipation: 462W
Case: SP3F
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APTC60VDAM24T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Technology: SJ-MOSFET
Drain-source voltage: 600V
Drain current: 70A
Pulsed drain current: 260A
Power dissipation: 462W
Case: SP3F
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Technology: SJ-MOSFET
Drain-source voltage: 600V
Drain current: 70A
Pulsed drain current: 260A
Power dissipation: 462W
Case: SP3F
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APTC60VDAM45T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Technology: CoolMOS™; SJ-MOSFET
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 250W
Case: SP1
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Technology: CoolMOS™; SJ-MOSFET
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 250W
Case: SP1
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній