| Фото | Назва | Виробник | Інформація |
Доступність |
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FQD3P50TM-F085 | ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -1.33A Pulsed drain current: -8.4A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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FDP8880 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 48A; 55W; TO220AB Mounting: THT Power dissipation: 55W Polarisation: unipolar Drain current: 48A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 19mΩ Gate-source voltage: ±20V |
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FDS8880 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11.6A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 16.3mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 581 шт: термін постачання 21-30 дні (днів) |
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| CAT25010VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; SOIC8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 128x8bit Clock frequency: 20MHz Kind of package: reel; tape Kind of interface: serial Memory: 1kb EEPROM Case: SOIC8 |
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| CAT25010YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 128x8bit Clock frequency: 20MHz Kind of package: reel; tape Kind of interface: serial Memory: 1kb EEPROM Case: TSSOP8 |
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MM3Z16VC | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 45nA |
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FDMC510P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8 Mounting: SMD Drain-source voltage: -20V Drain current: -18A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Gate charge: 116nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Case: MLP8 |
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| FDME510PZT | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -15A; 2.1W; MicroFET Power dissipation: 2.1W Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 0.1Ω Drain current: -6A Drain-source voltage: -20V Kind of package: reel; tape Case: MicroFET Gate charge: 22nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A |
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1N5361BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 27V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 989 шт: термін постачання 21-30 дні (днів) |
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NLAST4599DFT2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: analog switch; Ch: 1; SMD; SC70-6,SC88,SOT363; 2÷5.5VDC Mounting: SMD Kind of output: DPDT Supply voltage: 2...5.5V DC Case: SC70-6; SC88; SOT363 Operating temperature: -55...125°C Kind of package: reel; tape Type of integrated circuit: analog switch Number of channels: 1 |
на замовлення 1655 шт: термін постачання 21-30 дні (днів) |
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NUP4114UCW1T2G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.5V Max. forward impulse current: 12A Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape |
на замовлення 1777 шт: термін постачання 21-30 дні (днів) |
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HUF75321P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube On-state resistance: 34mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 44nC Technology: UltraFET® Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 93W Drain-source voltage: 55V Drain current: 31A |
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HUF75345P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube On-state resistance: 7mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 275nC Technology: UltraFET® Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 325W Drain-source voltage: 55V Drain current: 75A |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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| HUF75639G3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 200W Case: TO247 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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HUF75639P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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HUF75639S3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced |
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MJ4502G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 100V; 30A; 200W; TO3 Type of transistor: PNP Power dissipation: 200W Polarisation: bipolar Kind of package: in-tray Mounting: THT Case: TO3 Collector-emitter voltage: 100V Collector current: 30A |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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MC74AC161DR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; CMOS Type of integrated circuit: digital Kind of integrated circuit: asynchronous reset; binary counter Number of channels: 1 Number of inputs: 9 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: SOIC16 Family: AC Supply voltage: 2...6V DC Kind of package: reel; tape Operating temperature: -40...85°C |
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MMBT5087LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.225/0.3W; SOT23 Frequency: 40MHz Collector-emitter voltage: 50V Current gain: 250...800 Collector current: 50mA Type of transistor: PNP Power dissipation: 0.225/0.3W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT23 |
на замовлення 346 шт: термін постачання 21-30 дні (днів) |
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| NTUD3170NZT5G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.16A; 0.125W; SOT963 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.16A Power dissipation: 0.125W Case: SOT963 Gate-source voltage: ±8V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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NB3M8302CDR2G | ONSEMI |
Category: Level translators Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA Type of integrated circuit: digital Mounting: SMD Number of channels: 1 Case: SO8 Quiescent current: 13mA Operating temperature: -40...85°C Kind of package: reel; tape Kind of integrated circuit: fanout buffer Technology: CMOS; TTL Supply voltage: 4.6V DC |
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BC857BWT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 150...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1650 шт: термін постачання 21-30 дні (днів) |
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M74VHC1G132DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; TSOP5; 2÷5.5VDC; -55÷125°C; 40uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: TSOP5 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Kind of input: with Schmitt trigger Family: VHC |
на замовлення 3223 шт: термін постачання 21-30 дні (днів) |
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| SS22FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 2A; SOD123F; reel,tape Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Load current: 2A Max. forward voltage: 0.5V Max. off-state voltage: 20V Type of diode: Schottky rectifying Case: SOD123F Max. forward impulse current: 50A |
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| SS22T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 2A; SMB; reel,tape Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Load current: 2A Max. forward voltage: 0.5V Max. load current: 3A Max. off-state voltage: 20V Type of diode: Schottky rectifying Case: SMB Max. forward impulse current: 75A |
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NCP1380BDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; 9÷28V; SO8 Type of integrated circuit: PMIC Output current: -800...500mA Mounting: SMD Case: SO8 Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9...28V |
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NCP1380CDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; 9÷28V; SO8 Type of integrated circuit: PMIC Output current: -800...500mA Mounting: SMD Case: SO8 Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9...28V |
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NCP1380DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; 9÷28V; SO8 Type of integrated circuit: PMIC Case: SO8 Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9...28V Output current: -800...500mA |
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1N5364BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 33V; bulk; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 33V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
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FOD852 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4 Type of optocoupler: optocoupler Mounting: THT Case: DIP4 Turn-on time: 0.1ms Turn-off time: 20µs Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-15000%@1mA |
на замовлення 1869 шт: термін постачання 21-30 дні (днів) |
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FOD8523S | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V Type of optocoupler: optocoupler Mounting: SMD Case: Gull wing 4 Collector-emitter voltage: 300V Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-15000%@1mA |
на замовлення 1099 шт: термін постачання 21-30 дні (днів) |
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FOD8523SD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V Type of optocoupler: optocoupler Mounting: SMD Case: Gull wing 4 Collector-emitter voltage: 300V Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-15000%@1mA |
на замовлення 1364 шт: термін постачання 21-30 дні (днів) |
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FOD852S | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V Type of optocoupler: optocoupler Mounting: SMD Case: Gull wing 4 Collector-emitter voltage: 300V Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-15000%@1mA |
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FOD852SD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V Type of optocoupler: optocoupler Mounting: SMD Case: Gull wing 4 Collector-emitter voltage: 300V Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-15000%@1mA |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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| FDMS3500 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 100A; 96W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 49A Pulsed drain current: 100A Power dissipation: 96W Case: Power56 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS3572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; 78W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 22A Power dissipation: 78W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 29mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS3606S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/40A Pulsed drain current: 40...100A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 10.8/2.8mΩ Mounting: SMD Gate charge: 29/83nC Kind of package: reel; tape Kind of channel: enhanced |
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FDMS3660S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: PQFN8 Gate-source voltage: ±20/±12V On-state resistance: 11/2.6mΩ Mounting: SMD Gate charge: 29/87nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2639 шт: термін постачання 21-30 дні (днів) |
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| FDMS3662 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 39A Pulsed drain current: 90A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 24.7mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS3669S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 24/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 14.5/7.1mΩ Mounting: SMD Gate charge: 24/34nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS3D5N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 86A; Idm: 745A; 125W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 86A Pulsed drain current: 745A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhanced |
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FDMS5672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 22A Power dissipation: 78W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS7602S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/30A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 12/7.2mΩ Mounting: SMD Gate charge: 28/46nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS7608S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 22/30A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 13.9/8.6mΩ Mounting: SMD Gate charge: 24/30nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS7650 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 169A; Idm: 1210A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 169A Pulsed drain current: 1210A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 209nC Kind of package: reel; tape Kind of channel: enhanced |
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FDD4243 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK Kind of package: reel; tape Case: DPAK Drain-source voltage: -40V Drain current: -14A On-state resistance: 69mΩ Type of transistor: P-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 29nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD |
на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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MM74HCT574SJX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOP20 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Trigger: positive-edge-triggered |
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FDS6680A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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| FPF2895CUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C Type of integrated circuit: power switch Number of channels: 1 Case: WLCSP20 Mounting: SMD Operating temperature: -40...85°C On-state resistance: 27mΩ Supply voltage: 4...22V DC Kind of package: reel; tape Integrated circuit features: ESD-protected; thermal protection |
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| FPF2895UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; SMD; reel,tape Type of integrated circuit: power switch Mounting: SMD Kind of package: reel; tape |
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| FPF2895VUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷105°C Type of integrated circuit: power switch Number of channels: 1 Case: WLCSP20 Mounting: SMD Operating temperature: -40...105°C On-state resistance: 27mΩ Supply voltage: 4...22V DC Kind of package: reel; tape Integrated circuit features: ESD-protected; thermal protection |
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MMBZ33VALT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 33V Max. forward impulse current: 0.87A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 26V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Tolerance: ±5% |
на замовлення 1870 шт: термін постачання 21-30 дні (днів) |
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SZMMBZ33VALT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 33V Max. forward impulse current: 0.87A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 26V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
товар відсутній |
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BZX84C5V6LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 125 шт: термін постачання 21-30 дні (днів) |
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1SS400T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 3pF Case: SOD523F Max. forward voltage: 1.2V Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 5670 шт: термін постачання 21-30 дні (днів) |
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NSS40201LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 2A; 0.46W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 2A Power dissipation: 0.46W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Application: automotive industry |
на замовлення 1490 шт: термін постачання 21-30 дні (днів) |
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MC74VHC126DR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
товар відсутній |
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MC74VHC126DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
товар відсутній |
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| FSA4157AP6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; SC70-6; 2.7÷5.5VDC; reel,tape; OUT: SPDT Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: analog switch Kind of output: SPDT Technology: TTL Quiescent current: 1µA Kind of package: reel; tape Case: SC70-6 Number of channels: 1 Supply voltage: 2.7...5.5V DC |
товар відсутній |
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| FDA38N30 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 22A Pulsed drain current: 150A Power dissipation: 312W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 85mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
| FQD3P50TM-F085 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Pulsed drain current: -8.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Pulsed drain current: -8.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| FDP8880 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; 55W; TO220AB
Mounting: THT
Power dissipation: 55W
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 19mΩ
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; 55W; TO220AB
Mounting: THT
Power dissipation: 55W
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 19mΩ
Gate-source voltage: ±20V
товар відсутній
| FDS8880 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 581 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 39.69 грн |
| 25+ | 32.69 грн |
| 34+ | 24.34 грн |
| 92+ | 22.95 грн |
| CAT25010VI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128x8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1kb EEPROM
Case: SOIC8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128x8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1kb EEPROM
Case: SOIC8
товар відсутній
| CAT25010YI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128x8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1kb EEPROM
Case: TSSOP8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128x8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1kb EEPROM
Case: TSSOP8
товар відсутній
| MM3Z16VC |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
товар відсутній
| FDMC510P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -18A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: MLP8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -18A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: MLP8
товар відсутній
| FDME510PZT |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -15A; 2.1W; MicroFET
Power dissipation: 2.1W
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.1Ω
Drain current: -6A
Drain-source voltage: -20V
Kind of package: reel; tape
Case: MicroFET
Gate charge: 22nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -15A; 2.1W; MicroFET
Power dissipation: 2.1W
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.1Ω
Drain current: -6A
Drain-source voltage: -20V
Kind of package: reel; tape
Case: MicroFET
Gate charge: 22nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
товар відсутній
| 1N5361BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 989 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.19 грн |
| 25+ | 15.72 грн |
| 67+ | 12.06 грн |
| 184+ | 11.4 грн |
| NLAST4599DFT2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 1; SMD; SC70-6,SC88,SOT363; 2÷5.5VDC
Mounting: SMD
Kind of output: DPDT
Supply voltage: 2...5.5V DC
Case: SC70-6; SC88; SOT363
Operating temperature: -55...125°C
Kind of package: reel; tape
Type of integrated circuit: analog switch
Number of channels: 1
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 1; SMD; SC70-6,SC88,SOT363; 2÷5.5VDC
Mounting: SMD
Kind of output: DPDT
Supply voltage: 2...5.5V DC
Case: SC70-6; SC88; SOT363
Operating temperature: -55...125°C
Kind of package: reel; tape
Type of integrated circuit: analog switch
Number of channels: 1
на замовлення 1655 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 11.96 грн |
| 90+ | 9.39 грн |
| 235+ | 8.9 грн |
| NUP4114UCW1T2G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
на замовлення 1777 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 45.68 грн |
| 19+ | 18.5 грн |
| 32+ | 11.13 грн |
| 100+ | 9.94 грн |
| 106+ | 7.65 грн |
| 289+ | 7.23 грн |
| HUF75321P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 44nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 93W
Drain-source voltage: 55V
Drain current: 31A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 44nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 93W
Drain-source voltage: 55V
Drain current: 31A
товар відсутній
| HUF75345P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 275nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 325W
Drain-source voltage: 55V
Drain current: 75A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 275nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 325W
Drain-source voltage: 55V
Drain current: 75A
на замовлення 49 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.65 грн |
| 8+ | 111.27 грн |
| 20+ | 105.01 грн |
| HUF75639G3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| HUF75639P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 79 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.13 грн |
| 9+ | 100.14 грн |
| 23+ | 94.58 грн |
| HUF75639S3ST |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MJ4502G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 30A; 200W; TO3
Type of transistor: PNP
Power dissipation: 200W
Polarisation: bipolar
Kind of package: in-tray
Mounting: THT
Case: TO3
Collector-emitter voltage: 100V
Collector current: 30A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 30A; 200W; TO3
Type of transistor: PNP
Power dissipation: 200W
Polarisation: bipolar
Kind of package: in-tray
Mounting: THT
Case: TO3
Collector-emitter voltage: 100V
Collector current: 30A
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 578.17 грн |
| 2+ | 427.69 грн |
| 6+ | 404.04 грн |
| 100+ | 397.79 грн |
| MC74AC161DR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC16
Family: AC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC16
Family: AC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
товар відсутній
| MMBT5087LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.225/0.3W; SOT23
Frequency: 40MHz
Collector-emitter voltage: 50V
Current gain: 250...800
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.225/0.3W; SOT23
Frequency: 40MHz
Collector-emitter voltage: 50V
Current gain: 250...800
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
на замовлення 346 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 12.73 грн |
| 49+ | 7.23 грн |
| 62+ | 5.62 грн |
| 106+ | 3.3 грн |
| 250+ | 3.14 грн |
| NTUD3170NZT5G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.16A; 0.125W; SOT963
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.16A
Power dissipation: 0.125W
Case: SOT963
Gate-source voltage: ±8V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.16A; 0.125W; SOT963
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.16A
Power dissipation: 0.125W
Case: SOT963
Gate-source voltage: ±8V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| NB3M8302CDR2G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: SO8
Quiescent current: 13mA
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: fanout buffer
Technology: CMOS; TTL
Supply voltage: 4.6V DC
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: SO8
Quiescent current: 13mA
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: fanout buffer
Technology: CMOS; TTL
Supply voltage: 4.6V DC
товар відсутній
| BC857BWT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1650 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.13 грн |
| 250+ | 1.51 грн |
| 500+ | 1.32 грн |
| 650+ | 1.26 грн |
| M74VHC1G132DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; TSOP5; 2÷5.5VDC; -55÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; TSOP5; 2÷5.5VDC; -55÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: VHC
на замовлення 3223 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.44 грн |
| 50+ | 8.07 грн |
| 129+ | 6.26 грн |
| 354+ | 5.98 грн |
| 3000+ | 5.7 грн |
| SS22FA |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SOD123F; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Type of diode: Schottky rectifying
Case: SOD123F
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SOD123F; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Type of diode: Schottky rectifying
Case: SOD123F
Max. forward impulse current: 50A
товар відсутній
| SS22T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.5V
Max. load current: 3A
Max. off-state voltage: 20V
Type of diode: Schottky rectifying
Case: SMB
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.5V
Max. load current: 3A
Max. off-state voltage: 20V
Type of diode: Schottky rectifying
Case: SMB
Max. forward impulse current: 75A
товар відсутній
| NCP1380BDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 9÷28V; SO8
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 9÷28V; SO8
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V
товар відсутній
| NCP1380CDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 9÷28V; SO8
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 9÷28V; SO8
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V
товар відсутній
| NCP1380DDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 9÷28V; SO8
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V
Output current: -800...500mA
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 9÷28V; SO8
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V
Output current: -800...500mA
товар відсутній
| 1N5364BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| FOD852 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP4
Turn-on time: 0.1ms
Turn-off time: 20µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP4
Turn-on time: 0.1ms
Turn-off time: 20µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
на замовлення 1869 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.39 грн |
| 7+ | 53.83 грн |
| 25+ | 39.43 грн |
| 28+ | 29.01 грн |
| 77+ | 27.42 грн |
| FOD8523S |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
на замовлення 1099 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.15 грн |
| 8+ | 47.57 грн |
| 23+ | 35.26 грн |
| 63+ | 33.31 грн |
| 500+ | 32.06 грн |
| FOD8523SD |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
на замовлення 1364 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.15 грн |
| 10+ | 46.25 грн |
| 23+ | 36.23 грн |
| 61+ | 34.28 грн |
| 1000+ | 33.03 грн |
| FOD852S |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
товар відсутній
| FOD852SD |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.4 грн |
| 9+ | 42.84 грн |
| FDMS3500 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 100A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 100A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS3572 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; 78W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Power dissipation: 78W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; 78W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Power dissipation: 78W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS3606S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/2.8mΩ
Mounting: SMD
Gate charge: 29/83nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/2.8mΩ
Mounting: SMD
Gate charge: 29/83nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS3660S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2639 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 122.07 грн |
| 5+ | 102.92 грн |
| 11+ | 78.58 грн |
| 29+ | 74.41 грн |
| FDMS3662 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 90A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 90A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS3669S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 24/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 14.5/7.1mΩ
Mounting: SMD
Gate charge: 24/34nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 24/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 14.5/7.1mΩ
Mounting: SMD
Gate charge: 24/34nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS3D5N08LC |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 86A; Idm: 745A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 86A
Pulsed drain current: 745A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 86A; Idm: 745A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 86A
Pulsed drain current: 745A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS5672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS7602S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 12/7.2mΩ
Mounting: SMD
Gate charge: 28/46nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 12/7.2mΩ
Mounting: SMD
Gate charge: 28/46nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS7608S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS7650 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 169A; Idm: 1210A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 169A
Pulsed drain current: 1210A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 209nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 169A; Idm: 1210A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 169A
Pulsed drain current: 1210A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 209nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD4243 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Kind of package: reel; tape
Case: DPAK
Drain-source voltage: -40V
Drain current: -14A
On-state resistance: 69mΩ
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 29nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Kind of package: reel; tape
Case: DPAK
Drain-source voltage: -40V
Drain current: -14A
On-state resistance: 69mΩ
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 29nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.68 грн |
| 25+ | 41.24 грн |
| 28+ | 28.69 грн |
| 77+ | 27.13 грн |
| MM74HCT574SJX |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Trigger: positive-edge-triggered
товар відсутній
| FDS6680A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.07 грн |
| FPF2895CUCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
товар відсутній
| FPF2895UCX |
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| FPF2895VUCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷105°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...105°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷105°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...105°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
товар відсутній
| MMBZ33VALT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 33V
Max. forward impulse current: 0.87A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Tolerance: ±5%
Category: Transil diodes - arrays
Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 33V
Max. forward impulse current: 0.87A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Tolerance: ±5%
на замовлення 1870 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.58 грн |
| 165+ | 2.16 грн |
| 490+ | 1.66 грн |
| 1340+ | 1.56 грн |
| SZMMBZ33VALT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 33V
Max. forward impulse current: 0.87A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Transil diodes - arrays
Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 33V
Max. forward impulse current: 0.87A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
товар відсутній
| BZX84C5V6LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 125 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 2.78 грн |
| 1SS400T1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 3pF
Case: SOD523F
Max. forward voltage: 1.2V
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 3pF
Case: SOD523F
Max. forward voltage: 1.2V
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 5670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.76 грн |
| 155+ | 2.25 грн |
| 470+ | 1.72 грн |
| 1290+ | 1.63 грн |
| NSS40201LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.46W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Power dissipation: 0.46W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.46W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Power dissipation: 0.46W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
на замовлення 1490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 14.38 грн |
| 35+ | 11.13 грн |
| 90+ | 8.96 грн |
| 250+ | 8.47 грн |
| MC74VHC126DR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| MC74VHC126DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| FSA4157AP6X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6; 2.7÷5.5VDC; reel,tape; OUT: SPDT
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Kind of output: SPDT
Technology: TTL
Quiescent current: 1µA
Kind of package: reel; tape
Case: SC70-6
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6; 2.7÷5.5VDC; reel,tape; OUT: SPDT
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Kind of output: SPDT
Technology: TTL
Quiescent current: 1µA
Kind of package: reel; tape
Case: SC70-6
Number of channels: 1
Supply voltage: 2.7...5.5V DC
товар відсутній
| FDA38N30 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Pulsed drain current: 150A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Pulsed drain current: 150A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній