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ADP3192JCPZ-RL ADP3192JCPZ-RL onsemi ADP3192.pdf Description: IC REG CTRLR INTEL 4OUT 40LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad, CSP
Voltage - Output: 0.5V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 4
Voltage - Input: 12V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, Intel VR10, VR11
Supplier Device Package: 40-LFCSP (6x6)
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ADP3198JCPZ-RL ADP3198JCPZ-RL onsemi adp3198-d.pdf Description: IC REG CTRLR INTEL 4OUT 40LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad, CSP
Voltage - Output: 0.5V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 4
Voltage - Input: 12V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, Intel VRM
Supplier Device Package: 40-LFCSP (6x6)
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ADP3110AKRZ ADP3110AKRZ onsemi adp3110a-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.6V ~ 13.2V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 35 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 11ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
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FCB20N60FTM FCB20N60FTM onsemi fcb20n60f-d.pdf Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
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FCD4N60TF FCD4N60TF onsemi fcd4n60-d.pdf Description: MOSFET N-CH 600V 3.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
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FCD4N60TM FCD4N60TM onsemi fcd4n60-d.pdf Description: MOSFET N-CH 600V 3.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+45.13 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FDD8580 FDD8580 onsemi FDD%2C%20FDU8580.pdf Description: MOSFET N-CH 20V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 49.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1445 pF @ 10 V
товару немає в наявності
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FDP61N20 FDP61N20 onsemi fdp61n20-d.pdf Description: MOSFET N-CH 200V 61A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
на замовлення 852 шт:
термін постачання 21-31 дні (днів)
2+255.45 грн
50+123.97 грн
100+112.13 грн
500+85.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDPF16N50T FDPF16N50T onsemi fdpf16n50t-d.pdf Description: MOSFET N-CH 500V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
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FDPF20N50T FDPF20N50T onsemi fdpf20n50t-d.pdf Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
на замовлення 901 шт:
термін постачання 21-31 дні (днів)
1+326.32 грн
50+162.62 грн
100+148.00 грн
500+114.87 грн
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FDS2672 FDS2672 onsemi FDS2672-D.pdf Description: MOSFET N-CH 200V 3.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+53.90 грн
5000+50.90 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FDS2734 FDS2734 onsemi fds2734-d.pdf Description: MOSFET N-CH 250V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 117mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 100 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+57.04 грн
5000+54.34 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FDU8580 FDU8580 onsemi FDD, FDU8580.pdf Description: MOSFET N-CH 20V 35A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 49.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1445 pF @ 10 V
товару немає в наявності
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FFPF30U60STTU FFPF30U60STTU onsemi FFPF30U60S.pdf Description: DIODE AVAL 600V 30A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
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FQB34N20LTM FQB34N20LTM onsemi fqb34n20l-d.pdf Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
на замовлення 4687 шт:
термін постачання 21-31 дні (днів)
2+299.84 грн
10+193.34 грн
100+136.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FSCM0565RGTU onsemi FSCM0565R.pdf Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 85 W
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FSD200BMX FSD200BMX onsemi FSD200B,FSD210B.pdf Description: IC OFFLINE SWITCH FLYBACK 7LSOP
Packaging: Tube
Package / Case: 8-SMD (7 Leads), Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 66%
Frequency - Switching: 134kHz
Internal Switch(s): Yes
Voltage - Breakdown: 670V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6V ~ 10V
Supplier Device Package: 7-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature
Voltage - Start Up: 7 V
Part Status: Obsolete
Power (Watts): 7 W
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FCB20N60FTM FCB20N60FTM onsemi fcb20n60f-d.pdf Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
на замовлення 332 шт:
термін постачання 21-31 дні (днів)
1+437.69 грн
10+283.26 грн
100+206.85 грн
В кошику  од. на суму  грн.
FCD4N60TM FCD4N60TM onsemi fcd4n60-d.pdf Description: MOSFET N-CH 600V 3.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 4571 шт:
термін постачання 21-31 дні (днів)
3+154.20 грн
10+95.69 грн
100+65.23 грн
500+48.98 грн
1000+47.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDS2672 FDS2672 onsemi FDS2672-D.pdf Description: MOSFET N-CH 200V 3.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V
на замовлення 5343 шт:
термін постачання 21-31 дні (днів)
2+179.90 грн
10+112.12 грн
100+76.99 грн
500+58.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDS2734 FDS2734 onsemi fds2734-d.pdf Description: MOSFET N-CH 250V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 117mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 100 V
на замовлення 9949 шт:
термін постачання 21-31 дні (днів)
2+189.25 грн
10+117.82 грн
100+81.13 грн
500+62.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MM74HC125MTCX MM74HC125MTCX onsemi MM74HC126-D.pdf Description: IC BUFFER NON-INVERT 6V 14-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 14-TSSOP
Part Status: Active
товару немає в наявності
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MM74HC4538MX MM74HC4538MX onsemi MM74HC4538.pdf Description: IC MULTIVIBRATOR 26NS 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 26 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Voltage - Supply: 2 V ~ 6 V
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74AC139SCX 74AC139SCX onsemi ONSM-S-A0003589990-1.pdf?t.download=true&u=5oefqw Description: IC DECODER/DEMUX 1X2:4 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 2
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Part Status: Active
на замовлення 10883 шт:
термін постачання 21-31 дні (днів)
4+99.69 грн
10+58.42 грн
25+48.72 грн
100+35.41 грн
250+30.34 грн
500+27.22 грн
1000+24.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
74AC245SCX 74AC245SCX onsemi 74ACT245-D.pdf Description: IC TXRX NON-INVERT 6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 15679 шт:
термін постачання 21-31 дні (днів)
5+69.31 грн
10+48.00 грн
25+43.29 грн
100+35.82 грн
250+33.52 грн
500+32.25 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
74VHC574MTCX 74VHC574MTCX onsemi 74VHC574-D.PDF Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 115 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
на замовлення 14521 шт:
термін постачання 21-31 дні (днів)
7+51.40 грн
10+35.32 грн
25+31.77 грн
100+26.13 грн
250+24.37 грн
500+23.31 грн
1000+22.66 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NSR0320MW2T1G NSR0320MW2T1G onsemi nsr0320mw2t1-d.pdf Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
на замовлення 51960 шт:
термін постачання 21-31 дні (днів)
3000+2.69 грн
6000+2.57 грн
9000+2.49 грн
15000+2.23 грн
30000+2.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FAN73832M FAN73832M onsemi fan73832-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 15V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
FAN7383M FAN7383M onsemi fan7383-d.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 15V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
FAN7529M FAN7529M onsemi fan7529-d.pdf Description: IC PFC CTRLR CRM/TRANSITION 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 22V
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 40 µA
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FAN7529N FAN7529N onsemi fan7529-d.pdf Description: IC PFC CTRLR CRM/TRANSITION 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 22V
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Supplier Device Package: 8-DIP
Part Status: Obsolete
Current - Startup: 40 µA
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В кошику  од. на суму  грн.
FAN8082DTF FAN8082DTF onsemi FAN8082D.pdf Description: IC MOTOR DRIVER 7V-12V 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -25°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 12V
Applications: Media Player
Technology: Bipolar
Voltage - Load: 6.6V ~ 7.4V
Supplier Device Package: 8-SOIC
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
FCH47N60F FCH47N60F onsemi FCH47N60F.pdf Description: MOSFET N-CH 600V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
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FDB8441 FDB8441 onsemi FDB8441.pdf Description: MOSFET N-CH 40V 28A/120A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
товару немає в наявності
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FDMC2610 FDMC2610 onsemi fdmc2610-d.pdf Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)
3000+73.80 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDMS3672 FDMS3672 onsemi fdms3672-d.pdf Description: MOSFET N-CH 100V 7.4A/22A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+86.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDN359BN FDN359BN onsemi fdn359bn-d.pdf Description: MOSFET N-CH 30V 2.7A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
3000+11.60 грн
6000+10.23 грн
9000+9.75 грн
15000+8.64 грн
21000+8.35 грн
30000+8.05 грн
75000+7.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDP8441 FDP8441 onsemi fdp8441-d.pdf Description: MOSFET N-CH 40V 23A/80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
товару немає в наявності
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FDS6930B FDS6930B onsemi ONSM-S-A0003584273-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 30V 5.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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FDS8984 FDS8984 onsemi FDS8984-D.PDF Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
2500+17.94 грн
5000+16.69 грн
7500+16.60 грн
12500+15.32 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FQU3N60CTU FQU3N60CTU onsemi FQD3N60C%2C%20FQU3N60C.pdf Description: MOSFET N-CH 600V 2.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V
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IRFM120ATF IRFM120ATF onsemi irfm120a-d.pdf Description: MOSFET N-CH 100V 2.3A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.15A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
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В кошику  од. на суму  грн.
FAN8082DTF FAN8082DTF onsemi FAN8082D.pdf Description: IC MOTOR DRIVER 7V-12V 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -25°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 12V
Applications: Media Player
Technology: Bipolar
Voltage - Load: 6.6V ~ 7.4V
Supplier Device Package: 8-SOIC
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
FDB8441 FDB8441 onsemi FDB8441.pdf Description: MOSFET N-CH 40V 28A/120A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FDMC2610 FDMC2610 onsemi fdmc2610-d.pdf Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 42540 шт:
термін постачання 21-31 дні (днів)
2+193.14 грн
10+127.64 грн
100+91.89 грн
500+74.30 грн
1000+69.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDMS3672 FDMS3672 onsemi fdms3672-d.pdf Description: MOSFET N-CH 100V 7.4A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 50 V
на замовлення 7578 шт:
термін постачання 21-31 дні (днів)
2+255.45 грн
10+161.24 грн
100+112.90 грн
500+86.52 грн
1000+80.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDN359BN FDN359BN onsemi fdn359bn-d.pdf Description: MOSFET N-CH 30V 2.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
на замовлення 79130 шт:
термін постачання 21-31 дні (днів)
7+49.84 грн
11+29.62 грн
100+19.04 грн
500+13.61 грн
1000+12.23 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FDS6930B FDS6930B onsemi ONSM-S-A0003584273-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 30V 5.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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FDS8984 FDS8984 onsemi FDS8984-D.PDF Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 41836 шт:
термін постачання 21-31 дні (днів)
6+60.75 грн
10+41.32 грн
100+28.16 грн
500+21.14 грн
1000+19.15 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRFM120ATF IRFM120ATF onsemi irfm120a-d.pdf Description: MOSFET N-CH 100V 2.3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.15A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
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FDD13AN06A0 FDD13AN06A0 onsemi fdd13an06a0-d.pdf Description: MOSFET N-CH 60V 9.9A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 4756 шт:
термін постачання 21-31 дні (днів)
2+166.66 грн
10+103.64 грн
100+70.95 грн
500+53.45 грн
1000+53.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ADP3208JCPZ-RL ADP3208JCPZ-RL onsemi ADP3208.pdf Description: IC REG CTRLR IMVP6 1OUT 48LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad, CSP
Voltage - Output: 0.3V ~ 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 100°C
Applications: Controller, Intel IMVP-6+
Supplier Device Package: 48-LFCSP (7x7)
Part Status: Obsolete
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ADP3120AJCPZ-RL ADP3120AJCPZ-RL onsemi adp3120a-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 150°C (TJ)
Voltage - Supply: 4.6V ~ 13.2V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 35 V
Supplier Device Package: 8-DFN (3x3)
Rise / Fall Time (Typ): 20ns, 11ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Part Status: Active
DigiKey Programmable: Not Verified
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FCD7N60TM FCD7N60TM onsemi fcd7n60-d.pdf Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
на замовлення 1758 шт:
термін постачання 21-31 дні (днів)
2+201.71 грн
10+126.22 грн
100+87.35 грн
500+68.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FCD5N60TM FCD5N60TM onsemi fcu5n60-d.pdf Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 31620 шт:
термін постачання 21-31 дні (днів)
2+165.11 грн
10+102.59 грн
100+70.15 грн
500+52.80 грн
1000+52.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FAN7384MX FAN7384MX onsemi fan7384-d.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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FAN7530MX FAN7530MX onsemi fan7530-d.pdf Description: IC PFC CTRLR CRM/TRANSITION 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 22V
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Current - Startup: 40 µA
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)
3000+25.85 грн
6000+24.29 грн
9000+23.99 грн
15000+22.20 грн
21000+22.02 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDAF59N30 FDAF59N30 onsemi FDAF59N30.pdf Description: MOSFET N-CH 300V 34A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 17A, 10V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
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FDC608PZ FDC608PZ onsemi fdc608pz-d.pdf Description: MOSFET P-CH 20V 5.8A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+12.30 грн
6000+11.63 грн
9000+11.45 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDD4685 FDD4685 onsemi fdd4685-d.pdf Description: MOSFET P-CH 40V 8.4A/32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+22.35 грн
5000+19.90 грн
7500+19.08 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ADP3192JCPZ-RL ADP3192.pdf
ADP3192JCPZ-RL
Виробник: onsemi
Description: IC REG CTRLR INTEL 4OUT 40LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad, CSP
Voltage - Output: 0.5V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 4
Voltage - Input: 12V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, Intel VR10, VR11
Supplier Device Package: 40-LFCSP (6x6)
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ADP3198JCPZ-RL adp3198-d.pdf
ADP3198JCPZ-RL
Виробник: onsemi
Description: IC REG CTRLR INTEL 4OUT 40LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad, CSP
Voltage - Output: 0.5V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 4
Voltage - Input: 12V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, Intel VRM
Supplier Device Package: 40-LFCSP (6x6)
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ADP3110AKRZ adp3110a-d.pdf
ADP3110AKRZ
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.6V ~ 13.2V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 35 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 11ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Part Status: Obsolete
DigiKey Programmable: Not Verified
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FCB20N60FTM fcb20n60f-d.pdf
FCB20N60FTM
Виробник: onsemi
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
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FCD4N60TF fcd4n60-d.pdf
FCD4N60TF
Виробник: onsemi
Description: MOSFET N-CH 600V 3.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
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FCD4N60TM fcd4n60-d.pdf
FCD4N60TM
Виробник: onsemi
Description: MOSFET N-CH 600V 3.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+45.13 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FDD8580 FDD%2C%20FDU8580.pdf
FDD8580
Виробник: onsemi
Description: MOSFET N-CH 20V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 49.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1445 pF @ 10 V
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FDP61N20 fdp61n20-d.pdf
FDP61N20
Виробник: onsemi
Description: MOSFET N-CH 200V 61A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
на замовлення 852 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+255.45 грн
50+123.97 грн
100+112.13 грн
500+85.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDPF16N50T fdpf16n50t-d.pdf
FDPF16N50T
Виробник: onsemi
Description: MOSFET N-CH 500V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
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FDPF20N50T fdpf20n50t-d.pdf
FDPF20N50T
Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
на замовлення 901 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+326.32 грн
50+162.62 грн
100+148.00 грн
500+114.87 грн
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FDS2672 FDS2672-D.pdf
FDS2672
Виробник: onsemi
Description: MOSFET N-CH 200V 3.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+53.90 грн
5000+50.90 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FDS2734 fds2734-d.pdf
FDS2734
Виробник: onsemi
Description: MOSFET N-CH 250V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 117mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 100 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+57.04 грн
5000+54.34 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FDU8580 FDD, FDU8580.pdf
FDU8580
Виробник: onsemi
Description: MOSFET N-CH 20V 35A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 49.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1445 pF @ 10 V
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FFPF30U60STTU FFPF30U60S.pdf
FFPF30U60STTU
Виробник: onsemi
Description: DIODE AVAL 600V 30A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
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FQB34N20LTM fqb34n20l-d.pdf
FQB34N20LTM
Виробник: onsemi
Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
на замовлення 4687 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+299.84 грн
10+193.34 грн
100+136.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FSCM0565RGTU FSCM0565R.pdf
Виробник: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 85 W
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FSD200BMX FSD200B,FSD210B.pdf
FSD200BMX
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7LSOP
Packaging: Tube
Package / Case: 8-SMD (7 Leads), Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 66%
Frequency - Switching: 134kHz
Internal Switch(s): Yes
Voltage - Breakdown: 670V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6V ~ 10V
Supplier Device Package: 7-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature
Voltage - Start Up: 7 V
Part Status: Obsolete
Power (Watts): 7 W
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FCB20N60FTM fcb20n60f-d.pdf
FCB20N60FTM
Виробник: onsemi
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
на замовлення 332 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+437.69 грн
10+283.26 грн
100+206.85 грн
В кошику  од. на суму  грн.
FCD4N60TM fcd4n60-d.pdf
FCD4N60TM
Виробник: onsemi
Description: MOSFET N-CH 600V 3.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 4571 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+154.20 грн
10+95.69 грн
100+65.23 грн
500+48.98 грн
1000+47.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDS2672 FDS2672-D.pdf
FDS2672
Виробник: onsemi
Description: MOSFET N-CH 200V 3.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V
на замовлення 5343 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+179.90 грн
10+112.12 грн
100+76.99 грн
500+58.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDS2734 fds2734-d.pdf
FDS2734
Виробник: onsemi
Description: MOSFET N-CH 250V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 117mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 100 V
на замовлення 9949 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+189.25 грн
10+117.82 грн
100+81.13 грн
500+62.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MM74HC125MTCX MM74HC126-D.pdf
MM74HC125MTCX
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 14-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 14-TSSOP
Part Status: Active
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MM74HC4538MX MM74HC4538.pdf
MM74HC4538MX
Виробник: onsemi
Description: IC MULTIVIBRATOR 26NS 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 26 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Voltage - Supply: 2 V ~ 6 V
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74AC139SCX ONSM-S-A0003589990-1.pdf?t.download=true&u=5oefqw
74AC139SCX
Виробник: onsemi
Description: IC DECODER/DEMUX 1X2:4 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 2
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Part Status: Active
на замовлення 10883 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.69 грн
10+58.42 грн
25+48.72 грн
100+35.41 грн
250+30.34 грн
500+27.22 грн
1000+24.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
74AC245SCX 74ACT245-D.pdf
74AC245SCX
Виробник: onsemi
Description: IC TXRX NON-INVERT 6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 15679 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+69.31 грн
10+48.00 грн
25+43.29 грн
100+35.82 грн
250+33.52 грн
500+32.25 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
74VHC574MTCX 74VHC574-D.PDF
74VHC574MTCX
Виробник: onsemi
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 115 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
на замовлення 14521 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+51.40 грн
10+35.32 грн
25+31.77 грн
100+26.13 грн
250+24.37 грн
500+23.31 грн
1000+22.66 грн
Мінімальне замовлення: 7
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NSR0320MW2T1G nsr0320mw2t1-d.pdf
NSR0320MW2T1G
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
на замовлення 51960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.69 грн
6000+2.57 грн
9000+2.49 грн
15000+2.23 грн
30000+2.13 грн
Мінімальне замовлення: 3000
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FAN73832M fan73832-d.pdf
FAN73832M
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 15V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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FAN7383M fan7383-d.pdf
FAN7383M
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 15V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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FAN7529M fan7529-d.pdf
FAN7529M
Виробник: onsemi
Description: IC PFC CTRLR CRM/TRANSITION 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 22V
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 40 µA
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FAN7529N fan7529-d.pdf
FAN7529N
Виробник: onsemi
Description: IC PFC CTRLR CRM/TRANSITION 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 22V
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Supplier Device Package: 8-DIP
Part Status: Obsolete
Current - Startup: 40 µA
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FAN8082DTF FAN8082D.pdf
FAN8082DTF
Виробник: onsemi
Description: IC MOTOR DRIVER 7V-12V 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -25°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 12V
Applications: Media Player
Technology: Bipolar
Voltage - Load: 6.6V ~ 7.4V
Supplier Device Package: 8-SOIC
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
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FCH47N60F FCH47N60F.pdf
FCH47N60F
Виробник: onsemi
Description: MOSFET N-CH 600V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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FDB8441 FDB8441.pdf
FDB8441
Виробник: onsemi
Description: MOSFET N-CH 40V 28A/120A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
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FDMC2610 fdmc2610-d.pdf
FDMC2610
Виробник: onsemi
Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+73.80 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDMS3672 fdms3672-d.pdf
FDMS3672
Виробник: onsemi
Description: MOSFET N-CH 100V 7.4A/22A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+86.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDN359BN fdn359bn-d.pdf
FDN359BN
Виробник: onsemi
Description: MOSFET N-CH 30V 2.7A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.60 грн
6000+10.23 грн
9000+9.75 грн
15000+8.64 грн
21000+8.35 грн
30000+8.05 грн
75000+7.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDP8441 fdp8441-d.pdf
FDP8441
Виробник: onsemi
Description: MOSFET N-CH 40V 23A/80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FDS6930B ONSM-S-A0003584273-1.pdf?t.download=true&u=5oefqw
FDS6930B
Виробник: onsemi
Description: MOSFET 2N-CH 30V 5.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
товару немає в наявності
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FDS8984 FDS8984-D.PDF
FDS8984
Виробник: onsemi
Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+17.94 грн
5000+16.69 грн
7500+16.60 грн
12500+15.32 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FQU3N60CTU FQD3N60C%2C%20FQU3N60C.pdf
FQU3N60CTU
Виробник: onsemi
Description: MOSFET N-CH 600V 2.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V
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IRFM120ATF irfm120a-d.pdf
IRFM120ATF
Виробник: onsemi
Description: MOSFET N-CH 100V 2.3A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.15A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
товару немає в наявності
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FAN8082DTF FAN8082D.pdf
FAN8082DTF
Виробник: onsemi
Description: IC MOTOR DRIVER 7V-12V 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -25°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 12V
Applications: Media Player
Technology: Bipolar
Voltage - Load: 6.6V ~ 7.4V
Supplier Device Package: 8-SOIC
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
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FDB8441 FDB8441.pdf
FDB8441
Виробник: onsemi
Description: MOSFET N-CH 40V 28A/120A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
товару немає в наявності
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FDMC2610 fdmc2610-d.pdf
FDMC2610
Виробник: onsemi
Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 42540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+193.14 грн
10+127.64 грн
100+91.89 грн
500+74.30 грн
1000+69.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDMS3672 fdms3672-d.pdf
FDMS3672
Виробник: onsemi
Description: MOSFET N-CH 100V 7.4A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 50 V
на замовлення 7578 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+255.45 грн
10+161.24 грн
100+112.90 грн
500+86.52 грн
1000+80.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDN359BN fdn359bn-d.pdf
FDN359BN
Виробник: onsemi
Description: MOSFET N-CH 30V 2.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
на замовлення 79130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+49.84 грн
11+29.62 грн
100+19.04 грн
500+13.61 грн
1000+12.23 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FDS6930B ONSM-S-A0003584273-1.pdf?t.download=true&u=5oefqw
FDS6930B
Виробник: onsemi
Description: MOSFET 2N-CH 30V 5.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
товару немає в наявності
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FDS8984 FDS8984-D.PDF
FDS8984
Виробник: onsemi
Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 41836 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.75 грн
10+41.32 грн
100+28.16 грн
500+21.14 грн
1000+19.15 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRFM120ATF irfm120a-d.pdf
IRFM120ATF
Виробник: onsemi
Description: MOSFET N-CH 100V 2.3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.15A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
товару немає в наявності
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FDD13AN06A0 fdd13an06a0-d.pdf
FDD13AN06A0
Виробник: onsemi
Description: MOSFET N-CH 60V 9.9A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 4756 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+166.66 грн
10+103.64 грн
100+70.95 грн
500+53.45 грн
1000+53.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ADP3208JCPZ-RL ADP3208.pdf
ADP3208JCPZ-RL
Виробник: onsemi
Description: IC REG CTRLR IMVP6 1OUT 48LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad, CSP
Voltage - Output: 0.3V ~ 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 100°C
Applications: Controller, Intel IMVP-6+
Supplier Device Package: 48-LFCSP (7x7)
Part Status: Obsolete
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ADP3120AJCPZ-RL adp3120a-d.pdf
ADP3120AJCPZ-RL
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 150°C (TJ)
Voltage - Supply: 4.6V ~ 13.2V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 35 V
Supplier Device Package: 8-DFN (3x3)
Rise / Fall Time (Typ): 20ns, 11ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Part Status: Active
DigiKey Programmable: Not Verified
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FCD7N60TM fcd7n60-d.pdf
FCD7N60TM
Виробник: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
на замовлення 1758 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+201.71 грн
10+126.22 грн
100+87.35 грн
500+68.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FCD5N60TM fcu5n60-d.pdf
FCD5N60TM
Виробник: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 31620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+165.11 грн
10+102.59 грн
100+70.15 грн
500+52.80 грн
1000+52.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FAN7384MX fan7384-d.pdf
FAN7384MX
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
товару немає в наявності
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FAN7530MX fan7530-d.pdf
FAN7530MX
Виробник: onsemi
Description: IC PFC CTRLR CRM/TRANSITION 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 22V
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Current - Startup: 40 µA
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+25.85 грн
6000+24.29 грн
9000+23.99 грн
15000+22.20 грн
21000+22.02 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDAF59N30 FDAF59N30.pdf
FDAF59N30
Виробник: onsemi
Description: MOSFET N-CH 300V 34A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 17A, 10V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
товару немає в наявності
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FDC608PZ fdc608pz-d.pdf
FDC608PZ
Виробник: onsemi
Description: MOSFET P-CH 20V 5.8A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.30 грн
6000+11.63 грн
9000+11.45 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDD4685 fdd4685-d.pdf
FDD4685
Виробник: onsemi
Description: MOSFET P-CH 40V 8.4A/32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+22.35 грн
5000+19.90 грн
7500+19.08 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
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