| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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FDT457N | onsemi |
 Description: MOSFET N-CH 30V 5A SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V |
на замовлення 17153 шт: термін постачання 21-31 дні (днів) |
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FQS4901TF | onsemi |
Description: MOSFET 2N-CH 400V 450MA 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Rds On (Max) @ Id, Vgs: 4.2Ohm @ 225mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Current - Continuous Drain (Id) @ 25°C: 450mA Drain to Source Voltage (Vdss): 400V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FQT5P10TF | onsemi |
Description: MOSFET P-CH 100V 1A SOT223-4 Part Status: Active Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
на замовлення 1501 шт: термін постачання 21-31 дні (днів) |
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FQT7N10TF | onsemi |
Description: MOSFET N-CH 100V 1.7A SOT223-4 Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 850mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 9688 шт: термін постачання 21-31 дні (днів) |
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NC7SB3157P6X | onsemi |
Description: IC SWITCH SPDT X 1 15OHM SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 250MHz Supplier Device Package: SC-88 (SC-70-6) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
на замовлення 204552 шт: термін постачання 21-31 дні (днів) |
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FAN7385M | onsemi |
Description: IC GATE DRVR HIGH-SIDE 14SOP DigiKey Programmable: Not Verified Part Status: Obsolete Current - Peak Output (Source, Sink): 350mA, 650mA Logic Voltage - VIL, VIH: 1.3V, 2.5V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 2 Driven Configuration: High-Side Channel Type: Independent Rise / Fall Time (Typ): 50ns, 30ns Supplier Device Package: 14-SOP High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDB2614 | onsemi |
Description: MOSFET N-CH 200V 62A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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FDB2710 | onsemi |
Description: MOSFET N-CH 250V 50A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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FDB44N25TM | onsemi |
Description: MOSFET N-CH 250V 44A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V Power Dissipation (Max): 307W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V |
на замовлення 8800 шт: термін постачання 21-31 дні (днів) |
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FDB52N20TM | onsemi |
Description: MOSFET N-CH 200V 52A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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FDB8442 | onsemi |
Description: MOSFET N-CH 40V 28A/80A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Power Dissipation (Max): 254W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDC638APZ | onsemi |
Description: MOSFET P-CH 20V 4.5A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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FDD4243 | onsemi |
Description: MOSFET P-CH 40V 6.7A/14A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FDFMA2N028Z | onsemi |
Description: MOSFET N-CH 20V 3.7A 6MICROFET Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.4W (Tj) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDFMA2P029Z | onsemi |
Description: MOSFET P-CH 20V 3.1A 6MICROFET Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.4W (Tj) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMA520PZ | onsemi |
Description: MOSFET P-CH 20V 7.3A 6MICROFET Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMA530PZ | onsemi |
Description: MOSFET P-CH 30V 6.8A 6MICROFET Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 6.8A, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 30 V |
на замовлення 1238 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1238 шт В кошику од. на суму грн. | ||||||||||||||
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FDMS2672 | onsemi |
Description: MOSFET N-CH 200V 3.7A/20A 8MLP Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-MLP (5x6), Power56 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 3.7A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS5672 | onsemi |
Description: MOSFET N-CH 60V 10.6A/22A 8MLP Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-MLP (5x6), Power56 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10.6A, 10V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDP52N20 | onsemi |
Description: MOSFET N-CH 200V 52A TO220-3 Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 357W (Tc) |
на замовлення 6316 шт: термін постачання 21-31 дні (днів) |
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FDP5800 | onsemi |
Description: MOSFET N-CH 60V 14A/80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 242W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 595 шт: термін постачання 21-31 дні (днів) |
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FDS4435BZ | onsemi |
 Description: MOSFET P-CH 30V 8.8A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1845 pF @ 15 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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FDS8447 | onsemi |
Description: MOSFET N-CH 40V 12.8A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FDS8449 | onsemi |
Description: MOSFET N-CH 40V 7.6A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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FDW2508PB | onsemi |
Description: MOSFET 2P-CH 12V 6A 8-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FJY3013R | onsemi |
Description: TRANS PREBIAS NPN 50V SC89-3 Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-89-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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FJY4001R | onsemi |
Description: TRANS PREBIAS PNP 50V SC89-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FJY4009R | onsemi |
Description: TRANS PREBIAS PNP 200MW SOT523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FQP6N90C | onsemi |
Description: MOSFET N-CH 900V 6A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FSA2380BQX | onsemi |
Description: IC SWITCH AUDIO 3:1NEG 14-DQFN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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ISL9V5045S3S | onsemi |
Description: IGBT 480V 51A 300W D2PAK Power - Max: 300 W Voltage - Collector Emitter Breakdown (Max): 480 V Current - Collector (Ic) (Max): 51 A Part Status: Obsolete Gate Charge: 32 nC Test Condition: 300V, 1kOhm, 5V Td (on/off) @ 25°C: -/10.8µs Supplier Device Package: D²PAK (TO-263) Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A Input Type: Logic Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDB2614 | onsemi |
Description: MOSFET N-CH 200V 62A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDB2710 | onsemi |
Description: MOSFET N-CH 250V 50A D2PAK Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V |
на замовлення 420 шт: термін постачання 21-31 дні (днів) |
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FDB44N25TM | onsemi |
Description: MOSFET N-CH 250V 44A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V Power Dissipation (Max): 307W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V |
на замовлення 9373 шт: термін постачання 21-31 дні (днів) |
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FDB52N20TM | onsemi |
Description: MOSFET N-CH 200V 52A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
на замовлення 1683 шт: термін постачання 21-31 дні (днів) |
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FDC638APZ | onsemi |
Description: MOSFET P-CH 20V 4.5A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
на замовлення 18889 шт: термін постачання 21-31 дні (днів) |
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FDD4243 | onsemi |
Description: MOSFET P-CH 40V 6.7A/14A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V |
на замовлення 3994 шт: термін постачання 21-31 дні (днів) |
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FDFMA2N028Z | onsemi |
Description: MOSFET N-CH 20V 3.7A 6MICROFET Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.4W (Tj) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 464 шт: термін постачання 21-31 дні (днів) |
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FDMA530PZ | onsemi |
Description: MOSFET P-CH 30V 6.8A 6MICROFET Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 6.8A, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 1647 шт: термін постачання 21-31 дні (днів) |
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FDMS2672 | onsemi |
Description: MOSFET N-CH 200V 3.7A/20A 8MLP Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-MLP (5x6), Power56 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 3.7A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 4083 шт: термін постачання 21-31 дні (днів) |
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FDMS5672 | onsemi |
Description: MOSFET N-CH 60V 10.6A/22A 8MLP Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-MLP (5x6), Power56 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10.6A, 10V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDS4435BZ | onsemi |
Description: MOSFET P-CH 30V 8.8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1845 pF @ 15 V |
на замовлення 32183 шт: термін постачання 21-31 дні (днів) |
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FDS8447 | onsemi |
Description: MOSFET N-CH 40V 12.8A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 12452 шт: термін постачання 21-31 дні (днів) |
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FDS8449 | onsemi |
Description: MOSFET N-CH 40V 7.6A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDW2508PB | onsemi |
Description: MOSFET 2P-CH 12V 6A 8-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FJY4009R | onsemi |
Description: TRANS PREBIAS PNP 200MW SOT523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FSA2380BQX | onsemi |
Description: IC SWITCH AUDIO 3:1NEG 14-DQFN |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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NCP3163BMNR2G | onsemi |
Description: IC REG BUCK BST ADJ 3.4A 18DFN Part Status: Last Time Buy Voltage - Output (Min/Fixed): 1.25V Voltage - Input (Min): 2.5V Voltage - Output (Max): 40V (Switch) Synchronous Rectifier: No Supplier Device Package: 18-DFN (5x6) Topology: Buck, Boost Voltage - Input (Max): 40V Frequency - Switching: 50kHz ~ 300kHz Output Configuration: Positive or Negative Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 3.4A (Switch) Function: Step-Up, Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 18-VFDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCP3163BPWR2G | onsemi |
Description: IC REG BUCK BST ADJ 3.4A 16SOIC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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NCP3163MNR2G | onsemi |
Description: IC REG BUCK BST ADJ 3.4A 18DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP3163PWR2G | onsemi |
Description: IC REG BUCK BST ADJ 3.4A 16SOIC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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NCV3063DR2G | onsemi |
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Voltage - Output (Min/Fixed): 1.25V Voltage - Input (Min): 3V Voltage - Output (Max): 40V (Switch) Synchronous Rectifier: No Supplier Device Package: 8-SOIC Topology: Buck, Boost Voltage - Input (Max): 40V Frequency - Switching: 150kHz Output Configuration: Positive or Negative Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 1.5A (Switch) Function: Step-Up, Step-Down Number of Outputs: 1 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCV3063PG | onsemi |
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP Supplier Device Package: 8-PDIP Topology: Buck, Boost Voltage - Input (Max): 40V Frequency - Switching: 150kHz Output Configuration: Positive or Negative Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 1.5A (Switch) Function: Step-Up, Step-Down Number of Outputs: 1 Mounting Type: Through Hole Output Type: Adjustable Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube Voltage - Output (Min/Fixed): 1.25V Voltage - Input (Min): 3V Voltage - Output (Max): 40V (Switch) Synchronous Rectifier: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP3063BDR2G | onsemi |
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up, Step-Down Current - Output: 1.5A (Switch) Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive or Negative Frequency - Switching: 150kHz Voltage - Input (Max): 40V Topology: Buck, Boost Supplier Device Package: 8-SOIC Synchronous Rectifier: No Voltage - Output (Max): 40V (Switch) Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 1.25V Part Status: Active |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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NCP3063DR2G | onsemi |
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up, Step-Down Current - Output: 1.5A (Switch) Operating Temperature: 0°C ~ 70°C (TJ) Output Configuration: Positive or Negative Frequency - Switching: 150kHz Voltage - Input (Max): 40V Topology: Buck, Boost Supplier Device Package: 8-SOIC Synchronous Rectifier: No Voltage - Output (Max): 40V (Switch) Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 1.25V Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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NCP3063PG | onsemi |
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Adjustable Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Up, Step-Down Current - Output: 1.5A (Switch) Operating Temperature: 0°C ~ 70°C (TJ) Output Configuration: Positive or Negative Frequency - Switching: 150kHz Voltage - Input (Max): 40V Topology: Buck, Boost Supplier Device Package: 8-PDIP Synchronous Rectifier: No Voltage - Output (Max): 40V (Switch) Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 1.25V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP3163BPWG | onsemi |
Description: IC REG BUCK BST ADJ 3.4A 16SOIC |
на замовлення 188 шт: термін постачання 21-31 дні (днів) |
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NCP3063BDR2G | onsemi |
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up, Step-Down Current - Output: 1.5A (Switch) Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive or Negative Frequency - Switching: 150kHz Voltage - Input (Max): 40V Topology: Buck, Boost Supplier Device Package: 8-SOIC Synchronous Rectifier: No Voltage - Output (Max): 40V (Switch) Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 1.25V Part Status: Active |
на замовлення 13492 шт: термін постачання 21-31 дні (днів) |
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NCP3063DR2G | onsemi |
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up, Step-Down Current - Output: 1.5A (Switch) Operating Temperature: 0°C ~ 70°C (TJ) Output Configuration: Positive or Negative Frequency - Switching: 150kHz Voltage - Input (Max): 40V Topology: Buck, Boost Supplier Device Package: 8-SOIC Synchronous Rectifier: No Voltage - Output (Max): 40V (Switch) Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 1.25V Part Status: Active |
на замовлення 1321 шт: термін постачання 21-31 дні (днів) |
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| NLAS4684MR2 | onsemi |
Description: IC SWITCH SPDTX2 800MOHM 10MICRO Packaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 800mOhm -3db Bandwidth: 9.5MHz Supplier Device Package: 10-Micro Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 15pC Crosstalk: -83dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 60mOhm Switch Time (Ton, Toff) (Max): 30ns, 30ns Channel Capacitance (CS(off), CD(off)): 102pF, 104pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Obsolete Number of Circuits: 2 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| FDT457N |
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Виробник: onsemi
Description: MOSFET N-CH 30V 5A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
Description: MOSFET N-CH 30V 5A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
на замовлення 17153 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.60 грн |
| 10+ | 54.06 грн |
| 50+ | 40.12 грн |
| 100+ | 33.42 грн |
| 500+ | 25.98 грн |
| FQS4901TF |
|
Виробник: onsemi
Description: MOSFET 2N-CH 400V 450MA 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 225mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 450mA
Drain to Source Voltage (Vdss): 400V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 400V 450MA 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 225mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 450mA
Drain to Source Voltage (Vdss): 400V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| FQT5P10TF |
|
Виробник: onsemi
Description: MOSFET P-CH 100V 1A SOT223-4
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET P-CH 100V 1A SOT223-4
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
на замовлення 1501 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.57 грн |
| 10+ | 51.31 грн |
| 100+ | 33.28 грн |
| 500+ | 24.52 грн |
| 1000+ | 22.24 грн |
| FQT7N10TF |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 1.7A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 850mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 1.7A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 850mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 9688 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.75 грн |
| 10+ | 42.61 грн |
| 100+ | 29.46 грн |
| 500+ | 23.10 грн |
| 1000+ | 19.66 грн |
| 2000+ | 17.51 грн |
| NC7SB3157P6X |
|
Виробник: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
на замовлення 204552 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.65 грн |
| 29+ | 10.77 грн |
| 33+ | 9.53 грн |
| 100+ | 7.64 грн |
| 250+ | 7.02 грн |
| 500+ | 6.64 грн |
| 1000+ | 6.23 грн |
| FAN7385M |
|
Виробник: onsemi
Description: IC GATE DRVR HIGH-SIDE 14SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 1.3V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side
Channel Type: Independent
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 14-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC GATE DRVR HIGH-SIDE 14SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 1.3V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side
Channel Type: Independent
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 14-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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| FDB2614 |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V
Description: MOSFET N-CH 200V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
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| FDB2710 |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 50A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 250V 50A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
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| FDB44N25TM |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
Description: MOSFET N-CH 250V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
на замовлення 8800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 81.50 грн |
| 1600+ | 74.28 грн |
| FDB52N20TM |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 52A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Description: MOSFET N-CH 200V 52A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 77.75 грн |
| 1600+ | 69.68 грн |
| FDB8442 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 28A/80A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 25 V
Description: MOSFET N-CH 40V 28A/80A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 25 V
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од. на суму грн.
| FDC638APZ |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 4.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET P-CH 20V 4.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.37 грн |
| 6000+ | 12.72 грн |
| FDD4243 |
|
Виробник: onsemi
Description: MOSFET P-CH 40V 6.7A/14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Description: MOSFET P-CH 40V 6.7A/14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 22.92 грн |
| FDFMA2N028Z |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 3.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.4W (Tj)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 3.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.4W (Tj)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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| FDFMA2P029Z |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 3.1A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.4W (Tj)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Description: MOSFET P-CH 20V 3.1A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.4W (Tj)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
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| FDMA520PZ |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 7.3A 6MICROFET
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 10 V
Description: MOSFET P-CH 20V 7.3A 6MICROFET
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 10 V
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| FDMA530PZ |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 6.8A 6MICROFET
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET P-CH 30V 6.8A 6MICROFET
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
на замовлення 1238 шт:
термін постачання 21-31 дні (днів)
| FDMS2672 |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 3.7A/20A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 200V 3.7A/20A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 81.85 грн |
| FDMS5672 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 10.6A/22A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 10.6A/22A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 114.89 грн |
| FDP52N20 |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 52A TO220-3
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 357W (Tc)
Description: MOSFET N-CH 200V 52A TO220-3
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 357W (Tc)
на замовлення 6316 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 259.29 грн |
| 50+ | 126.45 грн |
| 100+ | 114.50 грн |
| 500+ | 87.79 грн |
| 1000+ | 81.47 грн |
| 2000+ | 77.47 грн |
| FDP5800 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 14A/80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 14A/80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 595 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 232.33 грн |
| 10+ | 145.92 грн |
| 50+ | 112.50 грн |
| 100+ | 95.45 грн |
| 500+ | 77.71 грн |
| FDS4435BZ |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 8.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1845 pF @ 15 V
Description: MOSFET P-CH 30V 8.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1845 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 20.54 грн |
| 5000+ | 18.22 грн |
| FDS8447 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 12.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 12.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 43.88 грн |
| 5000+ | 40.24 грн |
| FDS8449 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 7.6A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 7.6A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FDW2508PB |
|
Виробник: onsemi
Description: MOSFET 2P-CH 12V 6A 8-TSSOP
Description: MOSFET 2P-CH 12V 6A 8-TSSOP
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| FJY3013R |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SC89-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-89-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V SC89-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-89-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FJY4001R |
|
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SC89-3
Description: TRANS PREBIAS PNP 50V SC89-3
товару немає в наявності
В кошику
од. на суму грн.
| FJY4009R |
|
Виробник: onsemi
Description: TRANS PREBIAS PNP 200MW SOT523F
Description: TRANS PREBIAS PNP 200MW SOT523F
товару немає в наявності
В кошику
од. на суму грн.
| FQP6N90C |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Description: MOSFET N-CH 900V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FSA2380BQX |
|
Виробник: onsemi
Description: IC SWITCH AUDIO 3:1NEG 14-DQFN
Description: IC SWITCH AUDIO 3:1NEG 14-DQFN
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ISL9V5045S3S |
|
Виробник: onsemi
Description: IGBT 480V 51A 300W D2PAK
Power - Max: 300 W
Voltage - Collector Emitter Breakdown (Max): 480 V
Current - Collector (Ic) (Max): 51 A
Part Status: Obsolete
Gate Charge: 32 nC
Test Condition: 300V, 1kOhm, 5V
Td (on/off) @ 25°C: -/10.8µs
Supplier Device Package: D²PAK (TO-263)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: IGBT 480V 51A 300W D2PAK
Power - Max: 300 W
Voltage - Collector Emitter Breakdown (Max): 480 V
Current - Collector (Ic) (Max): 51 A
Part Status: Obsolete
Gate Charge: 32 nC
Test Condition: 300V, 1kOhm, 5V
Td (on/off) @ 25°C: -/10.8µs
Supplier Device Package: D²PAK (TO-263)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FDB2614 |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V
Description: MOSFET N-CH 200V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FDB2710 |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 50A D2PAK
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V
Description: MOSFET N-CH 250V 50A D2PAK
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 42.5mOhm @ 25A, 10V
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 416.29 грн |
| 10+ | 271.75 грн |
| 100+ | 198.09 грн |
| FDB44N25TM |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 44A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
Description: MOSFET N-CH 250V 44A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
на замовлення 9373 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 255.32 грн |
| 10+ | 160.50 грн |
| 50+ | 123.79 грн |
| 100+ | 105.06 грн |
| FDB52N20TM |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 52A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Description: MOSFET N-CH 200V 52A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
на замовлення 1683 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.81 грн |
| 10+ | 139.73 грн |
| 100+ | 97.13 грн |
| FDC638APZ |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 4.5A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET P-CH 20V 4.5A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
на замовлення 18889 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.23 грн |
| 10+ | 38.25 грн |
| 100+ | 24.83 грн |
| 500+ | 17.87 грн |
| 1000+ | 16.12 грн |
| FDD4243 |
|
Виробник: onsemi
Description: MOSFET P-CH 40V 6.7A/14A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Description: MOSFET P-CH 40V 6.7A/14A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
на замовлення 3994 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.57 грн |
| 10+ | 56.89 грн |
| 100+ | 37.51 грн |
| 500+ | 27.40 грн |
| 1000+ | 24.89 грн |
| FDFMA2N028Z |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 3.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.4W (Tj)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 3.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.4W (Tj)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 464 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.67 грн |
| 10+ | 49.02 грн |
| 100+ | 32.12 грн |
| FDMA530PZ |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 6.8A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 6.8A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1647 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.74 грн |
| 10+ | 58.57 грн |
| 100+ | 38.82 грн |
| 500+ | 28.49 грн |
| 1000+ | 25.93 грн |
| FDMS2672 |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 3.7A/20A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 200V 3.7A/20A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 4083 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.99 грн |
| 10+ | 134.08 грн |
| 100+ | 97.07 грн |
| 500+ | 75.80 грн |
| 1000+ | 73.97 грн |
| FDMS5672 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 10.6A/22A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 10.6A/22A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 319.55 грн |
| 10+ | 203.87 грн |
| 100+ | 144.79 грн |
| 500+ | 127.08 грн |
| FDS4435BZ |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 8.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1845 pF @ 15 V
Description: MOSFET P-CH 30V 8.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1845 pF @ 15 V
на замовлення 32183 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.09 грн |
| 10+ | 48.64 грн |
| 50+ | 35.93 грн |
| 100+ | 29.87 грн |
| 500+ | 23.10 грн |
| FDS8447 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 12.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 12.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 12452 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 105.46 грн |
| 10+ | 83.61 грн |
| 100+ | 65.01 грн |
| 500+ | 51.71 грн |
| 1000+ | 42.12 грн |
| FDS8449 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 7.6A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 7.6A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| FDW2508PB |
|
Виробник: onsemi
Description: MOSFET 2P-CH 12V 6A 8-TSSOP
Description: MOSFET 2P-CH 12V 6A 8-TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| FJY4009R |
|
Виробник: onsemi
Description: TRANS PREBIAS PNP 200MW SOT523F
Description: TRANS PREBIAS PNP 200MW SOT523F
товару немає в наявності
В кошику
од. на суму грн.
| FSA2380BQX |
|
Виробник: onsemi
Description: IC SWITCH AUDIO 3:1NEG 14-DQFN
Description: IC SWITCH AUDIO 3:1NEG 14-DQFN
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 201.40 грн |
| NCP3163BMNR2G |
|
Виробник: onsemi
Description: IC REG BUCK BST ADJ 3.4A 18DFN
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 1.25V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 40V (Switch)
Synchronous Rectifier: No
Supplier Device Package: 18-DFN (5x6)
Topology: Buck, Boost
Voltage - Input (Max): 40V
Frequency - Switching: 50kHz ~ 300kHz
Output Configuration: Positive or Negative
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3.4A (Switch)
Function: Step-Up, Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 18-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG BUCK BST ADJ 3.4A 18DFN
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 1.25V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 40V (Switch)
Synchronous Rectifier: No
Supplier Device Package: 18-DFN (5x6)
Topology: Buck, Boost
Voltage - Input (Max): 40V
Frequency - Switching: 50kHz ~ 300kHz
Output Configuration: Positive or Negative
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3.4A (Switch)
Function: Step-Up, Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 18-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 70.75 грн |
| NCP3163BPWR2G |
|
Виробник: onsemi
Description: IC REG BUCK BST ADJ 3.4A 16SOIC
Description: IC REG BUCK BST ADJ 3.4A 16SOIC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NCP3163MNR2G |
|
Виробник: onsemi
Description: IC REG BUCK BST ADJ 3.4A 18DFN
Description: IC REG BUCK BST ADJ 3.4A 18DFN
товару немає в наявності
В кошику
од. на суму грн.
| NCP3163PWR2G |
|
Виробник: onsemi
Description: IC REG BUCK BST ADJ 3.4A 16SOIC
Description: IC REG BUCK BST ADJ 3.4A 16SOIC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NCV3063DR2G |
|
Виробник: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 1.25V
Voltage - Input (Min): 3V
Voltage - Output (Max): 40V (Switch)
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC
Topology: Buck, Boost
Voltage - Input (Max): 40V
Frequency - Switching: 150kHz
Output Configuration: Positive or Negative
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1.5A (Switch)
Function: Step-Up, Step-Down
Number of Outputs: 1
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 1.25V
Voltage - Input (Min): 3V
Voltage - Output (Max): 40V (Switch)
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC
Topology: Buck, Boost
Voltage - Input (Max): 40V
Frequency - Switching: 150kHz
Output Configuration: Positive or Negative
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1.5A (Switch)
Function: Step-Up, Step-Down
Number of Outputs: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 44.98 грн |
| NCV3063PG |
|
Виробник: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP
Supplier Device Package: 8-PDIP
Topology: Buck, Boost
Voltage - Input (Max): 40V
Frequency - Switching: 150kHz
Output Configuration: Positive or Negative
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1.5A (Switch)
Function: Step-Up, Step-Down
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: Adjustable
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Voltage - Output (Min/Fixed): 1.25V
Voltage - Input (Min): 3V
Voltage - Output (Max): 40V (Switch)
Synchronous Rectifier: No
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP
Supplier Device Package: 8-PDIP
Topology: Buck, Boost
Voltage - Input (Max): 40V
Frequency - Switching: 150kHz
Output Configuration: Positive or Negative
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1.5A (Switch)
Function: Step-Up, Step-Down
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: Adjustable
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Voltage - Output (Min/Fixed): 1.25V
Voltage - Input (Min): 3V
Voltage - Output (Max): 40V (Switch)
Synchronous Rectifier: No
товару немає в наявності
В кошику
од. на суму грн.
| NCP3063BDR2G |
|
Виробник: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 42.46 грн |
| 5000+ | 39.94 грн |
| NCP3063DR2G |
|
Виробник: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: 0°C ~ 70°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: 0°C ~ 70°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NCP3063PG |
|
Виробник: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: 0°C ~ 70°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Obsolete
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: 0°C ~ 70°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| NCP3163BPWG |
|
Виробник: onsemi
Description: IC REG BUCK BST ADJ 3.4A 16SOIC
Description: IC REG BUCK BST ADJ 3.4A 16SOIC
на замовлення 188 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 241.84 грн |
| 10+ | 209.06 грн |
| 25+ | 197.27 грн |
| 100+ | 157.73 грн |
| NCP3063BDR2G |
|
Виробник: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
на замовлення 13492 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.60 грн |
| 10+ | 62.69 грн |
| 25+ | 56.78 грн |
| 100+ | 47.17 грн |
| 250+ | 44.26 грн |
| 500+ | 42.50 грн |
| 1000+ | 41.11 грн |
| NCP3063DR2G |
|
Виробник: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: 0°C ~ 70°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: 0°C ~ 70°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
на замовлення 1321 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.19 грн |
| 10+ | 63.68 грн |
| 25+ | 57.66 грн |
| 100+ | 47.91 грн |
| 250+ | 44.96 грн |
| 500+ | 43.18 грн |
| 1000+ | 41.79 грн |
| NLAS4684MR2 |
Виробник: onsemi
Description: IC SWITCH SPDTX2 800MOHM 10MICRO
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 9.5MHz
Supplier Device Package: 10-Micro
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 15pC
Crosstalk: -83dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 30ns, 30ns
Channel Capacitance (CS(off), CD(off)): 102pF, 104pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Obsolete
Number of Circuits: 2
Description: IC SWITCH SPDTX2 800MOHM 10MICRO
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 9.5MHz
Supplier Device Package: 10-Micro
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 15pC
Crosstalk: -83dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 30ns, 30ns
Channel Capacitance (CS(off), CD(off)): 102pF, 104pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Obsolete
Number of Circuits: 2
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.