| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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SS26FL | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape Mounting: SMD Max. forward impulse current: 50A Max. forward voltage: 0.75V Max. off-state voltage: 60V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123F Type of diode: Schottky rectifying |
на замовлення 3667 шт: термін постачання 14-30 дні (днів) |
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SS26T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Mounting: SMD Max. forward impulse current: 50A Max. forward voltage: 0.55V Max. off-state voltage: 60V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying |
на замовлення 1010 шт: термін постачання 14-30 дні (днів) |
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NRVBSS26NT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Mounting: SMD Max. forward impulse current: 40A Max. forward voltage: 0.63V Application: automotive industry Max. off-state voltage: 60V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NV25160DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 2.5÷5.5V; 10MHz Mounting: SMD Access time: 40ns Type of integrated circuit: EEPROM memory Operating temperature: -40...150°C Clock frequency: 10MHz Memory: 16kb EEPROM Kind of interface: serial Memory organisation: 2kx8bit Kind of package: reel; tape Case: TSSOP8 Interface: SPI Operating voltage: 2.5...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| CAT25160VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz Mounting: SMD Access time: 40ns Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 16kb EEPROM Kind of interface: serial Memory organisation: 2048x8bit Kind of package: reel; tape Case: SOIC8 Interface: SPI Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| CAT25160YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz Mounting: SMD Access time: 40ns Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 16kb EEPROM Kind of interface: serial Memory organisation: 2048x8bit Kind of package: reel; tape Case: TSSOP8 Interface: SPI Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| CAV25160VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz Mounting: SMD Access time: 35ns Type of integrated circuit: EEPROM memory Operating temperature: -40...125°C Clock frequency: 10MHz Memory: 16kb EEPROM Kind of interface: serial Memory organisation: 2048x8bit Kind of package: reel; tape Case: SOIC8 Interface: SPI Operating voltage: 2.5...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| CAV25160YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz Mounting: SMD Access time: 35ns Type of integrated circuit: EEPROM memory Operating temperature: -40...125°C Clock frequency: 10MHz Memory: 16kb EEPROM Kind of interface: serial Memory organisation: 2048x8bit Kind of package: reel; tape Case: TSSOP8 Interface: SPI Operating voltage: 2.5...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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HCPL4503M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 19-50%@16mA Transfer rate: 1Mbps Case: DIP8 Slew rate: 10kV/μs Manufacturer series: HCPL4503M |
на замовлення 134 шт: термін постачання 14-30 дні (днів) |
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MM3Z39VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 39V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G |
на замовлення 4253 шт: термін постачання 14-30 дні (днів) |
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FDP075N15A-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 92A Power dissipation: 333W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 224 шт: термін постачання 14-30 дні (днів) |
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FDB075N15A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 130A Pulsed drain current: 522A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
| FPF1321UCX | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape Type of integrated circuit: power switch Output current: 1.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: WLCSP6 Supply voltage: 1.5...5.5V DC Operating temperature: -40...85°C Version: ESD Kind of package: reel; tape On-state resistance: 50mΩ Active logical level: high |
на замовлення 6000 шт: термін постачання 14-30 дні (днів) |
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MBD770DWT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SC88; SMD; 70V; 0.1A; reel,tape Mounting: SMD Case: SC88 Kind of package: reel; tape Max. off-state voltage: 70V Load current: 0.1A Semiconductor structure: double independent Type of diode: Schottky switching Max. forward impulse current: 1A Max. forward voltage: 0.5V |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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NRVBS2040LNT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 70A Kind of package: reel; tape Application: automotive industry Max. load current: 4A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NRVBS240LNT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape Application: automotive industry Max. load current: 4A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NRVBS260NT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 60A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MRA4005T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.18V Max. load current: 30A Kind of package: reel; tape |
на замовлення 426 шт: термін постачання 14-30 дні (днів) |
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NRVA4005T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.18V Max. load current: 2A Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
на замовлення 3990 шт: термін постачання 14-30 дні (днів) |
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SBAV99LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Case: SOT23 Leakage current: 50µA Capacitance: 1.5pF Max. forward impulse current: 2A Max. forward voltage: 1.25V Power dissipation: 0.3W Application: automotive industry Kind of package: reel; tape |
на замовлення 1552 шт: термін постачання 14-30 дні (днів) |
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NTP6412ANG | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 240A; 167W; TO220-3 On-state resistance: 18.2mΩ Mounting: THT Pulsed drain current: 240A Power dissipation: 167W Gate charge: 73nC Polarisation: unipolar Drain current: 58A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO220-3 |
на замовлення 94 шт: термін постачання 14-30 дні (днів) |
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GBU8K | ONSEMI |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 489 шт: термін постачання 14-30 дні (днів) |
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FDV305N | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.9A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 303mΩ Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3133 шт: термін постачання 14-30 дні (днів) |
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| NUF8401MNT4G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; bidirectional; DFN16; Ch: 8; reel,tape Case: DFN16 Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Type of diode: TVS array Number of channels: 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDLL333 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1.1V; reel,tape Mounting: SMD Features of semiconductor devices: small signal Max. off-state voltage: 125V Load current: 0.5A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD80 Type of diode: switching Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZ1SMB5914BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 3.6V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FL7733AMX | ONSEMI |
Category: LED driversDescription: IC: driver; LED driver; SOP8; 180mA; linear dimming Mounting: SMD Case: SOP8 Output current: 0.18A Type of integrated circuit: driver Integrated circuit features: linear dimming Kind of integrated circuit: LED driver |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 1N916 | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; bulk; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: bulk Reverse recovery time: 4ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N916B | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; bulk; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: bulk Reverse recovery time: 4ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5343BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 7.5V; CASE017AA; single diode; bulk; 1N53xxB Mounting: THT Manufacturer series: 1N53xxB Power dissipation: 5W Kind of package: bulk Semiconductor structure: single diode Case: CASE017AA Zener voltage: 7.5V Type of diode: Zener Tolerance: ±5% |
на замовлення 2853 шт: термін постачання 14-30 дні (днів) |
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1N5343BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 7.5V; CASE017AA; single diode; reel,tape; 1N53xxB Mounting: THT Manufacturer series: 1N53xxB Power dissipation: 5W Kind of package: reel; tape Semiconductor structure: single diode Case: CASE017AA Zener voltage: 7.5V Type of diode: Zener Tolerance: ±5% |
на замовлення 1770 шт: термін постачання 14-30 дні (днів) |
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1N5343BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 7.5V; CASE017AA; single diode; reel,tape; 1N53xxB Mounting: THT Manufacturer series: 1N53xxB Power dissipation: 5W Kind of package: reel; tape Semiconductor structure: single diode Case: CASE017AA Zener voltage: 7.5V Type of diode: Zener Tolerance: ±5% |
на замовлення 2822 шт: термін постачання 14-30 дні (днів) |
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SZMM3Z7V5T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 7.5V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 7.5V Case: SOD323 Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G Application: automotive industry |
на замовлення 820 шт: термін постачання 14-30 дні (днів) |
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74AC32SCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC32MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| GBPC2510 | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GBPC2510W | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NCV7809BD2TR4G | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 9V; 1A; D2PAK; SMD; reel,tape Kind of package: reel; tape Application: automotive industry Output voltage: 9V Case: D2PAK Number of channels: 1 Mounting: SMD Kind of voltage regulator: fixed; linear Output current: 1A Type of integrated circuit: voltage regulator |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDP053N08B-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 480A; 146W; TO220-3 Case: TO220-3 Mounting: THT Kind of package: tube Pulsed drain current: 480A Power dissipation: 146W Gate charge: 65.4nC Polarisation: unipolar Drain current: 120A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 5.3mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDP050AN06A0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 245W Gate charge: 80nC Polarisation: unipolar Technology: PowerTrench® Drain current: 18A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 11mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS5C604NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 203A Power dissipation: 100W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 706 шт: термін постачання 14-30 дні (днів) |
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NTMFS5C670NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 1.8W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 20nC Pulsed drain current: 440A |
на замовлення 306 шт: термін постачання 14-30 дні (днів) |
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MC100EPT21DR2G | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; reel,tape; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 1 Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 1 Manufacturer series: 100EPT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC100EPT21DTG | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 2; OUT: 1 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 1 Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 2 Number of outputs: 1 Manufacturer series: 100EPT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC100EPT21DTR2G | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 1 Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 1 Manufacturer series: 100EPT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZMMSZ11T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 11V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZxxTxG Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NVMTS0D4N04CLTXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8 Drain current: 553.8A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFNW8 On-state resistance: 0.4mΩ Mounting: SMD Pulsed drain current: 900A Power dissipation: 122W Gate charge: 163nC Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMTS0D4N04CLTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W Drain current: 553.8A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power88 On-state resistance: 0.4mΩ Mounting: SMD Pulsed drain current: 900A Power dissipation: 122W Gate charge: 163nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| NTMTS0D4N04CTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 558A; Idm: 900A; 122W; Power88 Drain current: 558A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power88 On-state resistance: 450µΩ Mounting: SMD Pulsed drain current: 900A Power dissipation: 122W Gate charge: 251nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| NTMYS2D4N04CTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56 Drain current: 138A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56 On-state resistance: 2.3mΩ Mounting: SMD Pulsed drain current: 829A Power dissipation: 27W Gate charge: 32nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| NVMYS2D4N04CTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56 Drain current: 138A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56 On-state resistance: 2.3mΩ Mounting: SMD Pulsed drain current: 829A Power dissipation: 27W Gate charge: 32nC Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTFS004N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8 Drain current: 77A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN8 On-state resistance: 4.9mΩ Mounting: SMD Pulsed drain current: 338A Power dissipation: 18W Gate charge: 18nC Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTYS004N04CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 84A; Idm: 371A; 27W; LFPAK33 Drain current: 84A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK33 On-state resistance: 4.3mΩ Mounting: SMD Pulsed drain current: 371A Power dissipation: 27W Gate charge: 25nC Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
FJP5555TU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 5A; 75W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 5A Power dissipation: 75W Case: TO220AB Current gain: 20...40 Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
74VHC139MTCX | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; SMD; TSSOP16; VHC Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Number of inputs: 2 Mounting: SMD Case: TSSOP16 Family: VHC Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Manufacturer series: VHC Quiescent current: 40µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
74VHC139MX | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; CMOS Type of integrated circuit: digital Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer Number of channels: 2 Number of inputs: 3 Mounting: SMD Case: SOIC16 Family: VHC Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Manufacturer series: VHC Technology: CMOS Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
MC74VHC139DTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; CMOS Type of integrated circuit: digital Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer Number of channels: 2 Number of inputs: 3 Mounting: SMD Case: TSSOP16 Family: VHC Operating temperature: -55...125°C Supply voltage: 2...5.5V DC Manufacturer series: VHC Technology: CMOS Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
2N6491G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 15A Power dissipation: 75W Case: TO220AB Current gain: 20...150 Mounting: THT Kind of package: tube Frequency: 5MHz |
на замовлення 223 шт: термін постачання 14-30 дні (днів) |
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|
MC74ACT11DR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; SO14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Family: ACT |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
MC74HC175ADG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; SO16; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO16 Operating temperature: -55...125°C Supply voltage: 2...6V DC Manufacturer series: HC Trigger: positive-edge-triggered Kind of package: tube |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
|
| SS26FL |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.75V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.75V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Type of diode: Schottky rectifying
на замовлення 3667 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.42 грн |
| 23+ | 18.62 грн |
| 50+ | 13.08 грн |
| 100+ | 11.32 грн |
| 500+ | 8.22 грн |
| 1000+ | 7.21 грн |
| 1500+ | 6.71 грн |
| SS26T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.55V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.55V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
на замовлення 1010 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 37.03 грн |
| 22+ | 19.46 грн |
| 26+ | 16.44 грн |
| 50+ | 11.66 грн |
| 100+ | 10.15 грн |
| 500+ | 8.30 грн |
| NRVBSS26NT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.63V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.63V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
| NV25160DTHFT3G |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...150°C
Clock frequency: 10MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2kx8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...150°C
Clock frequency: 10MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2kx8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25160VI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25160YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAV25160VE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Access time: 35ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...125°C
Clock frequency: 10MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: SPI
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Access time: 35ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...125°C
Clock frequency: 10MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: SPI
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAV25160YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Access time: 35ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...125°C
Clock frequency: 10MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Access time: 35ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...125°C
Clock frequency: 10MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| HCPL4503M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Slew rate: 10kV/μs
Manufacturer series: HCPL4503M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Slew rate: 10kV/μs
Manufacturer series: HCPL4503M
на замовлення 134 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 112.38 грн |
| 10+ | 95.61 грн |
| 20+ | 89.74 грн |
| 50+ | 87.22 грн |
| MM3Z39VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
на замовлення 4253 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.52 грн |
| 120+ | 3.52 грн |
| 136+ | 3.10 грн |
| 180+ | 2.33 грн |
| 500+ | 2.14 грн |
| 1000+ | 1.85 грн |
| 3000+ | 1.54 грн |
| FDP075N15A-F102 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 224 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 314.30 грн |
| 5+ | 231.47 грн |
| 10+ | 202.95 грн |
| 50+ | 163.54 грн |
| FDB075N15A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Pulsed drain current: 522A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Pulsed drain current: 522A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| FPF1321UCX |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Type of integrated circuit: power switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP6
Supply voltage: 1.5...5.5V DC
Operating temperature: -40...85°C
Version: ESD
Kind of package: reel; tape
On-state resistance: 50mΩ
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Type of integrated circuit: power switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP6
Supply voltage: 1.5...5.5V DC
Operating temperature: -40...85°C
Version: ESD
Kind of package: reel; tape
On-state resistance: 50mΩ
Active logical level: high
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 36.13 грн |
| MBD770DWT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC88; SMD; 70V; 0.1A; reel,tape
Mounting: SMD
Case: SC88
Kind of package: reel; tape
Max. off-state voltage: 70V
Load current: 0.1A
Semiconductor structure: double independent
Type of diode: Schottky switching
Max. forward impulse current: 1A
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC88; SMD; 70V; 0.1A; reel,tape
Mounting: SMD
Case: SC88
Kind of package: reel; tape
Max. off-state voltage: 70V
Load current: 0.1A
Semiconductor structure: double independent
Type of diode: Schottky switching
Max. forward impulse current: 1A
Max. forward voltage: 0.5V
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.55 грн |
| 44+ | 9.56 грн |
| 53+ | 7.97 грн |
| 100+ | 7.63 грн |
| 500+ | 6.79 грн |
| 3000+ | 5.12 грн |
| NRVBS2040LNT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 4A
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| NRVBS240LNT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 4A
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| NRVBS260NT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
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| MRA4005T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
на замовлення 426 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.64 грн |
| 50+ | 8.55 грн |
| 57+ | 7.46 грн |
| 100+ | 5.48 грн |
| NRVA4005T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 2A
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 2A
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
на замовлення 3990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.77 грн |
| 40+ | 10.48 грн |
| 100+ | 6.99 грн |
| 500+ | 5.54 грн |
| 1000+ | 4.98 грн |
| 2000+ | 4.52 грн |
| 2500+ | 4.39 грн |
| SBAV99LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Leakage current: 50µA
Capacitance: 1.5pF
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Application: automotive industry
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Leakage current: 50µA
Capacitance: 1.5pF
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Application: automotive industry
Kind of package: reel; tape
на замовлення 1552 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 105+ | 4.03 грн |
| 158+ | 2.67 грн |
| 183+ | 2.30 грн |
| 500+ | 1.84 грн |
| 1000+ | 1.70 грн |
| NTP6412ANG |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 240A; 167W; TO220-3
On-state resistance: 18.2mΩ
Mounting: THT
Pulsed drain current: 240A
Power dissipation: 167W
Gate charge: 73nC
Polarisation: unipolar
Drain current: 58A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 240A; 167W; TO220-3
On-state resistance: 18.2mΩ
Mounting: THT
Pulsed drain current: 240A
Power dissipation: 167W
Gate charge: 73nC
Polarisation: unipolar
Drain current: 58A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO220-3
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 190.57 грн |
| 10+ | 109.86 грн |
| 50+ | 88.06 грн |
| GBU8K |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 489 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 130.06 грн |
| 5+ | 98.12 грн |
| 10+ | 84.70 грн |
| 20+ | 71.29 грн |
| FDV305N |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 303mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 303mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3133 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.90 грн |
| 22+ | 19.37 грн |
| 50+ | 13.50 грн |
| 100+ | 11.74 грн |
| 500+ | 8.89 грн |
| 1000+ | 7.88 грн |
| 1500+ | 7.38 грн |
| 3000+ | 6.71 грн |
| NUF8401MNT4G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN16; Ch: 8; reel,tape
Case: DFN16
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS array
Number of channels: 8
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN16; Ch: 8; reel,tape
Case: DFN16
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS array
Number of channels: 8
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| FDLL333 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1.1V; reel,tape
Mounting: SMD
Features of semiconductor devices: small signal
Max. off-state voltage: 125V
Load current: 0.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD80
Type of diode: switching
Max. forward voltage: 1.1V
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1.1V; reel,tape
Mounting: SMD
Features of semiconductor devices: small signal
Max. off-state voltage: 125V
Load current: 0.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD80
Type of diode: switching
Max. forward voltage: 1.1V
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| SZ1SMB5914BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
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| FL7733AMX |
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Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SOP8; 180mA; linear dimming
Mounting: SMD
Case: SOP8
Output current: 0.18A
Type of integrated circuit: driver
Integrated circuit features: linear dimming
Kind of integrated circuit: LED driver
Category: LED drivers
Description: IC: driver; LED driver; SOP8; 180mA; linear dimming
Mounting: SMD
Case: SOP8
Output current: 0.18A
Type of integrated circuit: driver
Integrated circuit features: linear dimming
Kind of integrated circuit: LED driver
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| 1N916 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; bulk; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; bulk; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
Reverse recovery time: 4ns
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| 1N916B |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; bulk; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; bulk; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
Reverse recovery time: 4ns
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| 1N5343BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; CASE017AA; single diode; bulk; 1N53xxB
Mounting: THT
Manufacturer series: 1N53xxB
Power dissipation: 5W
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE017AA
Zener voltage: 7.5V
Type of diode: Zener
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; CASE017AA; single diode; bulk; 1N53xxB
Mounting: THT
Manufacturer series: 1N53xxB
Power dissipation: 5W
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE017AA
Zener voltage: 7.5V
Type of diode: Zener
Tolerance: ±5%
на замовлення 2853 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.32 грн |
| 18+ | 23.99 грн |
| 21+ | 20.88 грн |
| 100+ | 14.17 грн |
| 1N5343BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; CASE017AA; single diode; reel,tape; 1N53xxB
Mounting: THT
Manufacturer series: 1N53xxB
Power dissipation: 5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE017AA
Zener voltage: 7.5V
Type of diode: Zener
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; CASE017AA; single diode; reel,tape; 1N53xxB
Mounting: THT
Manufacturer series: 1N53xxB
Power dissipation: 5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE017AA
Zener voltage: 7.5V
Type of diode: Zener
Tolerance: ±5%
на замовлення 1770 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.90 грн |
| 18+ | 23.31 грн |
| 50+ | 18.20 грн |
| 100+ | 15.93 грн |
| 500+ | 12.58 грн |
| 1N5343BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; CASE017AA; single diode; reel,tape; 1N53xxB
Mounting: THT
Manufacturer series: 1N53xxB
Power dissipation: 5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE017AA
Zener voltage: 7.5V
Type of diode: Zener
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; CASE017AA; single diode; reel,tape; 1N53xxB
Mounting: THT
Manufacturer series: 1N53xxB
Power dissipation: 5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE017AA
Zener voltage: 7.5V
Type of diode: Zener
Tolerance: ±5%
на замовлення 2822 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.35 грн |
| 18+ | 24.32 грн |
| 20+ | 21.72 грн |
| 100+ | 16.02 грн |
| 500+ | 13.00 грн |
| SZMM3Z7V5T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Case: SOD323
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Case: SOD323
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Application: automotive industry
на замовлення 820 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.06 грн |
| 30+ | 14.09 грн |
| 34+ | 12.66 грн |
| 50+ | 8.79 грн |
| 100+ | 7.25 грн |
| 500+ | 4.49 грн |
| 74AC32SCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
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| 74AC32MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
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| GBPC2510 |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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| GBPC2510W |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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| NCV7809BD2TR4G |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Application: automotive industry
Output voltage: 9V
Case: D2PAK
Number of channels: 1
Mounting: SMD
Kind of voltage regulator: fixed; linear
Output current: 1A
Type of integrated circuit: voltage regulator
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Application: automotive industry
Output voltage: 9V
Case: D2PAK
Number of channels: 1
Mounting: SMD
Kind of voltage regulator: fixed; linear
Output current: 1A
Type of integrated circuit: voltage regulator
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| FDP053N08B-F102 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 480A; 146W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Pulsed drain current: 480A
Power dissipation: 146W
Gate charge: 65.4nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 480A; 146W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Pulsed drain current: 480A
Power dissipation: 146W
Gate charge: 65.4nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
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| FDP050AN06A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 245W
Gate charge: 80nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 245W
Gate charge: 80nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 11mΩ
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| NTMFS5C604NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 203A
Power dissipation: 100W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 203A
Power dissipation: 100W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 706 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 222.18 грн |
| 10+ | 135.86 грн |
| 100+ | 96.44 грн |
| 500+ | 84.70 грн |
| NTMFS5C670NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 440A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 440A
на замовлення 306 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.54 грн |
| 12+ | 35.06 грн |
| 50+ | 29.18 грн |
| 100+ | 26.75 грн |
| 200+ | 25.16 грн |
| MC100EPT21DR2G |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
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| MC100EPT21DTG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
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| MC100EPT21DTR2G |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
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| SZMMSZ11T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZxxTxG
Application: automotive industry
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| NVMTS0D4N04CLTXG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8
Drain current: 553.8A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFNW8
On-state resistance: 0.4mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 122W
Gate charge: 163nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8
Drain current: 553.8A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFNW8
On-state resistance: 0.4mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 122W
Gate charge: 163nC
Polarisation: unipolar
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| NTMTS0D4N04CLTXG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W
Drain current: 553.8A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power88
On-state resistance: 0.4mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 122W
Gate charge: 163nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W
Drain current: 553.8A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power88
On-state resistance: 0.4mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 122W
Gate charge: 163nC
Polarisation: unipolar
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Мінімальне замовлення: 3000 шт
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| NTMTS0D4N04CTXG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 558A; Idm: 900A; 122W; Power88
Drain current: 558A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power88
On-state resistance: 450µΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 122W
Gate charge: 251nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 558A; Idm: 900A; 122W; Power88
Drain current: 558A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power88
On-state resistance: 450µΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 122W
Gate charge: 251nC
Polarisation: unipolar
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Мінімальне замовлення: 3000 шт
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| NTMYS2D4N04CTWG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56
Drain current: 138A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56
On-state resistance: 2.3mΩ
Mounting: SMD
Pulsed drain current: 829A
Power dissipation: 27W
Gate charge: 32nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56
Drain current: 138A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56
On-state resistance: 2.3mΩ
Mounting: SMD
Pulsed drain current: 829A
Power dissipation: 27W
Gate charge: 32nC
Polarisation: unipolar
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Мінімальне замовлення: 3000 шт
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| NVMYS2D4N04CTWG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56
Drain current: 138A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56
On-state resistance: 2.3mΩ
Mounting: SMD
Pulsed drain current: 829A
Power dissipation: 27W
Gate charge: 32nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56
Drain current: 138A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56
On-state resistance: 2.3mΩ
Mounting: SMD
Pulsed drain current: 829A
Power dissipation: 27W
Gate charge: 32nC
Polarisation: unipolar
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| NVTFS004N04CTAG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8
Drain current: 77A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 4.9mΩ
Mounting: SMD
Pulsed drain current: 338A
Power dissipation: 18W
Gate charge: 18nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8
Drain current: 77A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 4.9mΩ
Mounting: SMD
Pulsed drain current: 338A
Power dissipation: 18W
Gate charge: 18nC
Polarisation: unipolar
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| NVTYS004N04CLTWG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 84A; Idm: 371A; 27W; LFPAK33
Drain current: 84A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK33
On-state resistance: 4.3mΩ
Mounting: SMD
Pulsed drain current: 371A
Power dissipation: 27W
Gate charge: 25nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 84A; Idm: 371A; 27W; LFPAK33
Drain current: 84A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK33
On-state resistance: 4.3mΩ
Mounting: SMD
Pulsed drain current: 371A
Power dissipation: 27W
Gate charge: 25nC
Polarisation: unipolar
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| FJP5555TU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 5A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...40
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 5A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...40
Mounting: THT
Kind of package: tube
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| 74VHC139MTCX |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; SMD; TSSOP16; VHC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 2
Mounting: SMD
Case: TSSOP16
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Quiescent current: 40µA
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; SMD; TSSOP16; VHC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 2
Mounting: SMD
Case: TSSOP16
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Quiescent current: 40µA
Kind of package: reel; tape
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| 74VHC139MX |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Mounting: SMD
Case: SOIC16
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Technology: CMOS
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Mounting: SMD
Case: SOIC16
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Technology: CMOS
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| MC74VHC139DTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Mounting: SMD
Case: TSSOP16
Family: VHC
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Technology: CMOS
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Mounting: SMD
Case: TSSOP16
Family: VHC
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Technology: CMOS
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| 2N6491G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...150
Mounting: THT
Kind of package: tube
Frequency: 5MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...150
Mounting: THT
Kind of package: tube
Frequency: 5MHz
на замовлення 223 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 104.77 грн |
| 6+ | 75.65 грн |
| 10+ | 59.12 грн |
| 50+ | 35.73 грн |
| MC74ACT11DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; SO14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; SO14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| MC74HC175ADG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Manufacturer series: HC
Trigger: positive-edge-triggered
Kind of package: tube
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Manufacturer series: HC
Trigger: positive-edge-triggered
Kind of package: tube
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.87 грн |
| 11+ | 37.74 грн |
































