| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NVMFS5C638NLT1G | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 133A Pulsed drain current: 811A Power dissipation: 50W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 40.7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1496 шт: термін постачання 14-30 дні (днів) |
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NVMFS5C426NAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 235A; Idm: 900A; 64W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 235A Power dissipation: 64W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 900A Gate charge: 65nC |
на замовлення 1480 шт: термін постачання 14-30 дні (днів) |
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NTMFS5C426NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 235A; Idm: 900A; 64W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 235A Power dissipation: 64W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 900A Gate charge: 65nC |
на замовлення 1437 шт: термін постачання 14-30 дні (днів) |
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| NRVB5100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape Mounting: SMD Max. load current: 10A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 75A Max. forward voltage: 0.98V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVTS1545EMFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 210A Max. forward voltage: 0.6V Application: automotive industry Max. off-state voltage: 45V Load current: 15A Max. load current: 30A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB10100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape Mounting: SMD Max. load current: 20A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 150A Max. forward voltage: 0.95V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVTS30100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Mounting: SMD Max. load current: 60A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 350A Max. forward voltage: 0.76V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB440MFSWFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 40A Max. forward voltage: 0.65V Application: automotive industry Max. off-state voltage: 40V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB10100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape Mounting: SMD Max. load current: 20A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 150A Max. forward voltage: 0.95V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB1045MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 150A Max. forward voltage: 0.75V Application: automotive industry Max. off-state voltage: 45V Load current: 10A Max. load current: 20A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB1045MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 150A Max. forward voltage: 0.75V Application: automotive industry Max. off-state voltage: 45V Load current: 10A Max. load current: 20A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB2045EMFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 0.4kA Max. forward voltage: 0.64V Application: automotive industry Max. off-state voltage: 45V Load current: 20A Max. load current: 40A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB2045EMFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 0.4kA Max. forward voltage: 0.64V Application: automotive industry Max. off-state voltage: 45V Load current: 20A Max. load current: 40A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB30H100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Mounting: SMD Max. load current: 60A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 0.3kA Max. forward voltage: 0.9V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB30H100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Mounting: SMD Max. load current: 60A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 0.3kA Max. forward voltage: 0.9V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB440MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 40A Max. forward voltage: 0.65V Application: automotive industry Max. off-state voltage: 40V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||
| NRVB440MFSWFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 40A Max. forward voltage: 0.65V Application: automotive industry Max. off-state voltage: 40V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB460MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 4A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 40A Max. forward voltage: 0.74V Application: automotive industry Max. off-state voltage: 60V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB860MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 8A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 150A Max. forward voltage: 0.8V Application: automotive industry Max. off-state voltage: 60V Load current: 8A Max. load current: 16A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB860MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 8A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 150A Max. forward voltage: 0.8V Application: automotive industry Max. off-state voltage: 60V Load current: 8A Max. load current: 16A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB8H100MFSWFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape Mounting: SMD Max. load current: 16A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 75A Max. forward voltage: 0.9V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVB8H100MFSWFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape Mounting: SMD Max. load current: 16A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 75A Max. forward voltage: 0.9V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVTS1045EMFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. load current: 20A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVTS1045EMFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. load current: 20A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVTS12100EMFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 12A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 200A Max. forward voltage: 0.73V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 12A Max. load current: 24A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2N3773G | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 16A Power dissipation: 150W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 200kHz |
на замовлення 125 шт: термін постачання 14-30 дні (днів) |
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MC33078DG | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 16MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 16MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 5...18V DC; 10...36V DC Case: SO8 Operating temperature: -40...85°C Slew rate: 7V/μs Input offset voltage: 3mV Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
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2SC5226A-4-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 10V Collector current: 70mA Power dissipation: 0.15W Case: SC70 Current gain: 90...180 Mounting: SMD Kind of package: reel; tape Frequency: 5...7GHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N4148 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1V Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 1A Case: DO35 Kind of package: bulk Max. forward voltage: 1V Reverse recovery time: 4ns Power dissipation: 0.5W Capacitance: 4pF |
на замовлення 8509 шт: термін постачання 14-30 дні (днів) |
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1N4148 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.2A; DO35; bulk,tape; Ufmax: 1V; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Kind of package: bulk; tape Max. forward voltage: 1V Reverse recovery time: 4ns |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||||||||||
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MJF15031G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP Mounting: THT Collector-emitter voltage: 150V Power dissipation: 36W Polarisation: bipolar Type of transistor: PNP Current gain: 40 Kind of package: tube Case: TO220FP Frequency: 30MHz Collector current: 8A |
на замовлення 283 шт: термін постачання 14-30 дні (днів) |
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NTA4001NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD Case: SC75 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.3W Polarisation: unipolar Version: ESD Drain current: 0.238A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±10V On-state resistance: 3.5Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NVS4001NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 270mA; Idm: 0.8A; 330mW; SC70 Case: SC70 Kind of package: reel; tape Mounting: SMD Pulsed drain current: 0.8A Power dissipation: 0.33W Gate charge: 0.9nC Polarisation: unipolar Drain current: 0.27A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 1.5Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBRA210LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 10V; 2A; reel,tape Case: SMA Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 160A Max. forward voltage: 0.26V Max. off-state voltage: 10V Load current: 2A Semiconductor structure: single diode Type of diode: Schottky rectifying |
на замовлення 4761 шт: термін постачання 14-30 дні (днів) |
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| CAT24S128C4UTR | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.7÷5.5V; 1MHz Kind of package: reel; tape Case: WLCSP4 Interface: I2C Operating voltage: 1.7...5.5V Kind of memory: EEPROM Mounting: SMD Access time: 400ns Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 1MHz Memory: 128kb EEPROM Kind of interface: serial Memory organisation: 16kx8bit |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
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TIP31C | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Case: TO220AB Mounting: THT Frequency: 3MHz Power dissipation: 40W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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H11F1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7kV; Uce: 30V; DIP6 Mounting: THT Manufacturer series: H11FXM Collector-emitter voltage: 30V Kind of output: transistor Insulation voltage: 7kV Type of optocoupler: optocoupler Turn-on time: 25µs Case: DIP6 Turn-off time: 25µs Number of channels: 1 |
на замовлення 348 шт: термін постачання 14-30 дні (днів) |
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H11F3M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V Mounting: THT Manufacturer series: H11FXM Collector-emitter voltage: 15V Kind of output: FET transistor Insulation voltage: 7.5kV Max. off-state voltage: 5V Type of optocoupler: optocoupler Turn-on time: 45µs Case: DIP6 Turn-off time: 45µs Number of channels: 1 |
на замовлення 699 шт: термін постачання 14-30 дні (днів) |
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| H11F1TVM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6 Mounting: THT Manufacturer series: H11FXM Collector-emitter voltage: 30V Kind of output: FET transistor Insulation voltage: 4.17kV Max. off-state voltage: 5V Type of optocoupler: optocoupler Turn-on time: 45µs Case: PDIP6 Turn-off time: 45µs Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
| EGP20J | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 2A; Ifsm: 75A; DO15; reel,tape; 75ns Case: DO15 Mounting: THT Kind of package: reel; tape Max. forward impulse current: 75A Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 75ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| EGP20C | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 2A; Ifsm: 75A; DO15; reel,tape; 50ns Case: DO15 Mounting: THT Kind of package: reel; tape Max. forward impulse current: 75A Max. off-state voltage: 150V Load current: 2A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 50ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| EGP20D | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 75A; DO15; reel,tape; 50ns Case: DO15 Mounting: THT Kind of package: reel; tape Max. forward impulse current: 75A Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 50ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GBPC3508 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GBPC3508W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBT3906DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
на замовлення 634 шт: термін постачання 14-30 дні (днів) |
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SMBT3906DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LVX132MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA Mounting: SMD Supply voltage: 2...3.6V DC Kind of gate: NAND Type of integrated circuit: digital Operating temperature: -40...85°C Quiescent current: 20µA Kind of input: with Schmitt trigger Number of inputs: 2 Kind of package: reel; tape Case: SO14 Family: LVX Number of channels: quad; 4 |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
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MUN5231DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Manufacturer standard package: 3000pcs. Current gain: 8...15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC14050BDTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; hex Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 3...18V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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MC14050BDR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 6 Technology: CMOS Mounting: SMD Case: SO16 Operating temperature: -55...125°C Supply voltage: 3...18V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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1SMB5941BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 47V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB |
на замовлення 6578 шт: термін постачання 14-30 дні (днів) |
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BAT54C | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||
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MMUN2231LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
NSVMMUN2231LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.4W Case: SOT23; TO236AB Current gain: 8...15 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 2.2kΩ Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FPF2283CUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C Mounting: SMD Supply voltage: 2.8...28V DC Active logical level: low Type of integrated circuit: power switch Operating temperature: -40...85°C Integrated circuit features: thermal protection Kind of package: reel; tape Case: WLCSP20 Number of channels: 1 On-state resistance: 7.5mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
 |
FCH165N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247 Mounting: THT Case: TO247 Kind of package: tube Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.165Ω Pulsed drain current: 69A Power dissipation: 227W Gate charge: 75nC Polarisation: unipolar Drain current: 14A Kind of channel: enhancement Drain-source voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FCH165N65S3R0-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247 Mounting: THT Case: TO247 Kind of package: tube Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 0.14Ω Pulsed drain current: 47.5A Power dissipation: 154W Gate charge: 39nC Polarisation: unipolar Drain current: 12.3A Kind of channel: enhancement Drain-source voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
1N5338BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 5.1V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 5.1V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
ES1F | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF Power dissipation: 1.47W Features of semiconductor devices: fast switching Leakage current: 0.1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| ASX340AT3C00XPED0-DPBR | ONSEMI |
Category: Unclassified Description: ASX340AT3C00XPED0-DPBR |
на замовлення 750 шт: термін постачання 14-30 дні (днів) |
|
| NVMFS5C638NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Power dissipation: 50W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 40.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Power dissipation: 50W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 40.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1496 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 219.47 грн |
| 10+ | 132.51 грн |
| 100+ | 94.77 грн |
| NVMFS5C426NAFT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 235A; Idm: 900A; 64W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 235A
Power dissipation: 64W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 900A
Gate charge: 65nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 235A; Idm: 900A; 64W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 235A
Power dissipation: 64W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 900A
Gate charge: 65nC
на замовлення 1480 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 301.66 грн |
| 10+ | 183.66 грн |
| 100+ | 135.02 грн |
| 250+ | 126.64 грн |
| NTMFS5C426NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 235A; Idm: 900A; 64W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 235A
Power dissipation: 64W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 900A
Gate charge: 65nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 235A; Idm: 900A; 64W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 235A
Power dissipation: 64W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 900A
Gate charge: 65nC
на замовлення 1437 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 93.03 грн |
| 10+ | 61.14 грн |
| 100+ | 48.89 грн |
| 250+ | 45.45 грн |
| 500+ | 41.93 грн |
| 1000+ | 40.93 грн |
| NRVB5100MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape
Mounting: SMD
Max. load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.98V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape
Mounting: SMD
Max. load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.98V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 5A
товару немає в наявності
В кошику
од. на суму грн.
| NRVTS1545EMFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 210A
Max. forward voltage: 0.6V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 210A
Max. forward voltage: 0.6V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
| NRVB10100MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Max. load current: 20A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Max. load current: 20A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 10A
товару немає в наявності
В кошику
од. на суму грн.
| NRVTS30100MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Max. load current: 60A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 350A
Max. forward voltage: 0.76V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Max. load current: 60A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 350A
Max. forward voltage: 0.76V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 30A
товару немає в наявності
В кошику
од. на суму грн.
| NRVB440MFSWFT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
| NRVB10100MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Max. load current: 20A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Max. load current: 20A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 10A
товару немає в наявності
В кошику
од. на суму грн.
| NRVB1045MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
| NRVB1045MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
| NRVB2045EMFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Max. forward voltage: 0.64V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Max. forward voltage: 0.64V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
| NRVB2045EMFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Max. forward voltage: 0.64V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Max. forward voltage: 0.64V
Application: automotive industry
Max. off-state voltage: 45V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
| NRVB30H100MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Max. load current: 60A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 0.3kA
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Max. load current: 60A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 0.3kA
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 30A
товару немає в наявності
В кошику
од. на суму грн.
| NRVB30H100MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Max. load current: 60A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 0.3kA
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Max. load current: 60A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 0.3kA
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 30A
товару немає в наявності
В кошику
од. на суму грн.
| NRVB440MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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Мінімальне замовлення: 3 шт
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| NRVB440MFSWFT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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| NRVB460MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.74V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 4A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.74V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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| NRVB860MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 8A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.8V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 8A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.8V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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| NRVB860MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 8A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.8V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 8A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. forward voltage: 0.8V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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| NRVB8H100MFSWFT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 8A
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| NRVB8H100MFSWFT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 8A
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| NRVTS1045EMFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS1045EMFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS12100EMFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 12A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Max. forward voltage: 0.73V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 12A
Max. load current: 24A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 12A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 200A
Max. forward voltage: 0.73V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 12A
Max. load current: 24A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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| 2N3773G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 200kHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 200kHz
на замовлення 125 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 504.87 грн |
| 5+ | 399.20 грн |
| 10+ | 381.59 грн |
| MC33078DG |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Input offset voltage: 3mV
Kind of package: tube
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Input offset voltage: 3mV
Kind of package: tube
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Мінімальне замовлення: 3 шт
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| 2SC5226A-4-TL-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.15W
Case: SC70
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.15W
Case: SC70
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
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| 1N4148 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 1A
Case: DO35
Kind of package: bulk
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.5W
Capacitance: 4pF
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 1A
Case: DO35
Kind of package: bulk
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.5W
Capacitance: 4pF
на замовлення 8509 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.32 грн |
| 132+ | 3.19 грн |
| 220+ | 1.91 грн |
| 500+ | 1.37 грн |
| 1000+ | 1.19 грн |
| 2000+ | 1.05 грн |
| 5000+ | 0.89 грн |
| 1N4148 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; DO35; bulk,tape; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: bulk; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; DO35; bulk,tape; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: bulk; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
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Мінімальне замовлення: 30 шт
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| MJF15031G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP
Mounting: THT
Collector-emitter voltage: 150V
Power dissipation: 36W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 40
Kind of package: tube
Case: TO220FP
Frequency: 30MHz
Collector current: 8A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP
Mounting: THT
Collector-emitter voltage: 150V
Power dissipation: 36W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 40
Kind of package: tube
Case: TO220FP
Frequency: 30MHz
Collector current: 8A
на замовлення 283 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 187.86 грн |
| 10+ | 104.83 грн |
| 20+ | 95.61 грн |
| 50+ | 88.90 грн |
| NTA4001NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD
Case: SC75
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Drain current: 0.238A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD
Case: SC75
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Drain current: 0.238A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
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| NVS4001NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 270mA; Idm: 0.8A; 330mW; SC70
Case: SC70
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.33W
Gate charge: 0.9nC
Polarisation: unipolar
Drain current: 0.27A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 270mA; Idm: 0.8A; 330mW; SC70
Case: SC70
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.33W
Gate charge: 0.9nC
Polarisation: unipolar
Drain current: 0.27A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
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| MBRA210LT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 10V; 2A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 160A
Max. forward voltage: 0.26V
Max. off-state voltage: 10V
Load current: 2A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 10V; 2A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 160A
Max. forward voltage: 0.26V
Max. off-state voltage: 10V
Load current: 2A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
на замовлення 4761 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.80 грн |
| 12+ | 35.06 грн |
| 50+ | 24.07 грн |
| 100+ | 20.97 грн |
| 250+ | 18.03 грн |
| 500+ | 17.70 грн |
| CAT24S128C4UTR |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.7÷5.5V; 1MHz
Kind of package: reel; tape
Case: WLCSP4
Interface: I2C
Operating voltage: 1.7...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 400ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 128kb EEPROM
Kind of interface: serial
Memory organisation: 16kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.7÷5.5V; 1MHz
Kind of package: reel; tape
Case: WLCSP4
Interface: I2C
Operating voltage: 1.7...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 400ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 128kb EEPROM
Kind of interface: serial
Memory organisation: 16kx8bit
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| TIP31C |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
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| H11F1M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7kV; Uce: 30V; DIP6
Mounting: THT
Manufacturer series: H11FXM
Collector-emitter voltage: 30V
Kind of output: transistor
Insulation voltage: 7kV
Type of optocoupler: optocoupler
Turn-on time: 25µs
Case: DIP6
Turn-off time: 25µs
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7kV; Uce: 30V; DIP6
Mounting: THT
Manufacturer series: H11FXM
Collector-emitter voltage: 30V
Kind of output: transistor
Insulation voltage: 7kV
Type of optocoupler: optocoupler
Turn-on time: 25µs
Case: DIP6
Turn-off time: 25µs
Number of channels: 1
на замовлення 348 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 96.64 грн |
| 6+ | 79.67 грн |
| 10+ | 58.71 грн |
| 25+ | 57.87 грн |
| H11F3M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V
Mounting: THT
Manufacturer series: H11FXM
Collector-emitter voltage: 15V
Kind of output: FET transistor
Insulation voltage: 7.5kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Turn-on time: 45µs
Case: DIP6
Turn-off time: 45µs
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V
Mounting: THT
Manufacturer series: H11FXM
Collector-emitter voltage: 15V
Kind of output: FET transistor
Insulation voltage: 7.5kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Turn-on time: 45µs
Case: DIP6
Turn-off time: 45µs
Number of channels: 1
на замовлення 699 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 289.91 грн |
| 25+ | 199.60 грн |
| 50+ | 180.31 грн |
| 100+ | 171.08 грн |
| H11F1TVM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6
Mounting: THT
Manufacturer series: H11FXM
Collector-emitter voltage: 30V
Kind of output: FET transistor
Insulation voltage: 4.17kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Turn-on time: 45µs
Case: PDIP6
Turn-off time: 45µs
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6
Mounting: THT
Manufacturer series: H11FXM
Collector-emitter voltage: 30V
Kind of output: FET transistor
Insulation voltage: 4.17kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Turn-on time: 45µs
Case: PDIP6
Turn-off time: 45µs
Number of channels: 1
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Мінімальне замовлення: 1000 шт
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| EGP20J |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; Ifsm: 75A; DO15; reel,tape; 75ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; Ifsm: 75A; DO15; reel,tape; 75ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 75ns
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| EGP20C |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2A; Ifsm: 75A; DO15; reel,tape; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2A; Ifsm: 75A; DO15; reel,tape; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
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| EGP20D |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 75A; DO15; reel,tape; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 75A; DO15; reel,tape; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
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| GBPC3508 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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| GBPC3508W |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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| MBT3906DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
на замовлення 634 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 76+ | 5.54 грн |
| 122+ | 3.45 грн |
| 500+ | 2.59 грн |
| SMBT3906DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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| 74LVX132MX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA
Mounting: SMD
Supply voltage: 2...3.6V DC
Kind of gate: NAND
Type of integrated circuit: digital
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: LVX
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA
Mounting: SMD
Supply voltage: 2...3.6V DC
Kind of gate: NAND
Type of integrated circuit: digital
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: LVX
Number of channels: quad; 4
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Мінімальне замовлення: 3 шт
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од. на суму грн.
| MUN5231DW1T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Current gain: 8...15
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Current gain: 8...15
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| MC14050BDTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
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Мінімальне замовлення: 2500 шт
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| MC14050BDR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
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Мінімальне замовлення: 2500 шт
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| 1SMB5941BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 47V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 47V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
на замовлення 6578 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.19 грн |
| 25+ | 17.11 грн |
| 29+ | 14.93 грн |
| 50+ | 11.41 грн |
| 100+ | 10.23 грн |
| 500+ | 7.80 грн |
| 1000+ | 7.38 грн |
| BAT54C |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
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Мінімальне замовлення: 25 шт
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од. на суму грн.
| MMUN2231LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
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| NSVMMUN2231LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Current gain: 8...15
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Current gain: 8...15
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
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| FPF2283CUCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Mounting: SMD
Supply voltage: 2.8...28V DC
Active logical level: low
Type of integrated circuit: power switch
Operating temperature: -40...85°C
Integrated circuit features: thermal protection
Kind of package: reel; tape
Case: WLCSP20
Number of channels: 1
On-state resistance: 7.5mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Mounting: SMD
Supply voltage: 2.8...28V DC
Active logical level: low
Type of integrated circuit: power switch
Operating temperature: -40...85°C
Integrated circuit features: thermal protection
Kind of package: reel; tape
Case: WLCSP20
Number of channels: 1
On-state resistance: 7.5mΩ
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Мінімальне замовлення: 3000 шт
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| FCH165N60E |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Pulsed drain current: 69A
Power dissipation: 227W
Gate charge: 75nC
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 600V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Pulsed drain current: 69A
Power dissipation: 227W
Gate charge: 75nC
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 600V
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| FCH165N65S3R0-F155 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Pulsed drain current: 47.5A
Power dissipation: 154W
Gate charge: 39nC
Polarisation: unipolar
Drain current: 12.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Pulsed drain current: 47.5A
Power dissipation: 154W
Gate charge: 39nC
Polarisation: unipolar
Drain current: 12.3A
Kind of channel: enhancement
Drain-source voltage: 650V
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| 1N5338BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
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| ES1F |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Power dissipation: 1.47W
Features of semiconductor devices: fast switching
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Power dissipation: 1.47W
Features of semiconductor devices: fast switching
Leakage current: 0.1mA
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| ASX340AT3C00XPED0-DPBR |
|
на замовлення 750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 750+ | 804.72 грн |