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US1DFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
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NRVUS1DFA NRVUS1DFA ONSEMI Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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FODM452 FODM452 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5B6C2718A63CA17&compId=FODM452.pdf?ci_sign=52e262679e4e9dd89aabd4f074cb6a8428109fa1 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1Mbps; 15kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 20-50%@16mA
Transfer rate: 1Mbps
Case: Mini-flat 5pin
Slew rate: 15kV/μs
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FODM452R2 ONSEMI fodm453-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; 1Mbps; MFP5
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 20-50%@16mA
Transfer rate: 1Mbps
Case: MFP5
Max. off-state voltage: 5V
Output voltage: -500mV...20V
Manufacturer series: FODM452
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FST3257MTCX FST3257MTCX ONSEMI ONSM-S-A0003586743-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 4
Type of integrated circuit: analog switch
Kind of integrated circuit: bus switch; demultiplexer; multiplexer
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 3µA
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FSTD16211MTDX FSTD16211MTDX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781969BB8EE1FC259&compId=FSTD16211.pdf?ci_sign=cc34958480078b168d2800a25996f1b0e2584c56 Category: Decoders, multiplexers, switches
Description: IC: analog switch; 24bit,bus switch; SMD; TSSOP56; 4.5÷5.5VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: 24bit; bus switch
Mounting: SMD
Case: TSSOP56
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 10µA
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MC74HC1G32DFT2G-L22038 ONSEMI mc74hc1g32-d.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+3.26 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDMT80080DC ONSEMI fdmt80080dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Mounting: SMD
Case: DFNW8
Drain-source voltage: 80V
Drain current: 160A
On-state resistance: 2.22mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 273nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1453A
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FDC6321C FDC6321C ONSEMI FDC6321C.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 2.3/1.5nC
Technology: PowerTrench®
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
On-state resistance: 720/1220mΩ
Type of transistor: N/P-MOSFET
на замовлення 1433 шт:
термін постачання 21-30 дні (днів)
8+54.13 грн
14+28.92 грн
25+25.67 грн
47+19.64 грн
128+18.64 грн
250+18.56 грн
500+17.86 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
HUF75545P3 HUF75545P3 ONSEMI HUF75545P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB
Type of transistor: N-MOSFET
Case: TO220AB
Drain-source voltage: 80V
Drain current: 73A
On-state resistance: 10mΩ
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 235nC
Technology: UltraFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
на замовлення 153 шт:
термін постачання 21-30 дні (днів)
3+200.69 грн
8+127.59 грн
20+120.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
HUF75545S3ST ONSEMI HUF75545S3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
800+149.06 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
CAT5113VI-00-GT3 CAT5113VI-00-GT3 ONSEMI CAT5113.PDF Category: Digital potentiometers
Description: IC: digital potentiometer; 100kΩ; Up/Down Protocol; 5bit; SO8; SMD
Type of integrated circuit: digital potentiometer
Resistance: 100kΩ
Interface: Up/Down Protocol
Converter resolution: 5bit
Case: SO8
Mounting: SMD
Kind of memory: non-volatile
Operating temperature: -40...85°C
Number of channels: 1
Number of positions: 100
Supply voltage: 2.5...6V
Max INL: ±1LSB
Max DNL: ±0.5LSB
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MMBD1205 MMBD1205 ONSEMI mmbd1202-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. off-state voltage: 100V
Load current: 0.2A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Semiconductor structure: common anode; double
Reverse recovery time: 4ns
Leakage current: 0.1mA
Power dissipation: 0.35W
Type of diode: switching
Capacitance: 2pF
на замовлення 2897 шт:
термін постачання 21-30 дні (днів)
34+12.49 грн
49+7.96 грн
70+5.57 грн
100+4.76 грн
281+3.21 грн
772+3.04 грн
1000+2.92 грн
Мінімальне замовлення: 34
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MPSA29-D26Z MPSA29-D26Z ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED881CFD619F4896A18&compId=MPSA29.pdf?ci_sign=02abb5203c37a2836b2d1243f4d1b73de31d3e49 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Case: TO92
Frequency: 125MHz
Collector-emitter voltage: 100V
Current gain: 10k
Collector current: 0.8A
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.625W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: Darlington
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LM431SACM3X ONSEMI lm431sa-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+6.25 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
LM431CCZ ONSEMI lm431a-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)
10000+7.08 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
LM431SCCM3X ONSEMI lm431sa-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 5490 шт:
термін постачання 21-30 дні (днів)
3000+3.56 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MOC3012M MOC3012M ONSEMI MOC3012M.pdf Category: Optotriacs
Description: Optotriac; 5.3kV; triac; DIP6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC301XM
на замовлення 666 шт:
термін постачання 21-30 дні (днів)
8+55.79 грн
15+27.14 грн
40+23.12 грн
50+22.81 грн
100+21.11 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
74LCX245MTC 74LCX245MTC ONSEMI 74LCX245MTC.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: tube
Manufacturer series: LCX
Kind of integrated circuit: bidirectional; transceiver
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP20
на замовлення 808 шт:
термін постачання 21-30 дні (днів)
5+103.26 грн
11+36.58 грн
25+32.55 грн
73+29.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
74LCX245BQX ONSEMI 74LCX245-D.PDF Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; WQFN20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: WQFN20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
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MC74LCX245DWG MC74LCX245DWG ONSEMI mc74lcx245-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
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MC74LCX245DTG MC74LCX245DTG ONSEMI mc74lcx245-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
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MC74LCX245DTR2G MC74LCX245DTR2G ONSEMI mc74lcx245-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
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MC74LCX245DWR2G MC74LCX245DWR2G ONSEMI mc74lcx245-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
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MC74LCX245MNTWG ONSEMI MC74LCX245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; QFN20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: QFN20
Manufacturer series: LCX
Supply voltage: 1.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCX
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NSVR0320MW2T1G ONSEMI nsr0320mw2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 5A
Kind of package: reel; tape
Application: automotive industry
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
15+28.31 грн
22+18.33 грн
50+14.46 грн
100+12.99 грн
106+8.58 грн
290+8.12 грн
1500+8.04 грн
3000+7.81 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
FDD6670A ONSEMI FDD6670A-D.pdf 6eb98cb5d24ebe1d1ece7fc59f76ef36.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; DPAK
Power dissipation: 63W
Polarisation: unipolar
Kind of package: reel; tape
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
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NRVHPM120T3G ONSEMI nhpm120-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V
Max. off-state voltage: 200V
Max. load current: 2A
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 30A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: POWERMITE
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MUR440RLG ONSEMI mur420-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 4A; reel,tape; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO201AD
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MC33164D-3R2G ONSEMI mc34164-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
на замовлення 62500 шт:
термін постачання 21-30 дні (днів)
2500+29.31 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
MC34164D-5G ONSEMI mc34164-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
на замовлення 1614 шт:
термін постачання 21-30 дні (днів)
98+41.14 грн
Мінімальне замовлення: 98
В кошику  од. на суму  грн.
MUN2214T1G MUN2214T1G ONSEMI MUN2214.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.23W
на замовлення 5580 шт:
термін постачання 21-30 дні (днів)
56+7.49 грн
73+5.34 грн
100+4.77 грн
500+1.81 грн
1372+1.71 грн
Мінімальне замовлення: 56
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MUN2233T1G MUN2233T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EABAFB684AC749&compId=MUN2233.PDF?ci_sign=3447858b8727e1712f440bf1106571edd32a1003 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.23W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC59
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MUN2212T1G MUN2212T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EAB018FD750749&compId=MUN2212.PDF?ci_sign=1438ccdcdd99a1fb568e0c71ceafba830b3072f4 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.23W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Case: SC59
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
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SMUN2214T1G ONSEMI dtc114y-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.23W
Application: automotive industry
на замовлення 2740 шт:
термін постачання 21-30 дні (днів)
39+10.83 грн
59+6.57 грн
80+4.86 грн
100+4.31 грн
407+2.22 грн
1117+2.10 грн
Мінімальне замовлення: 39
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NVMFD5877NLT1G NVMFD5877NLT1G ONSEMI nvmfd5877nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm
Case: DFN8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 12W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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SBRD8835LG ONSEMI mbrd835l-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; tube
Mounting: SMD
Case: DPAK
Max. off-state voltage: 35V
Max. forward voltage: 0.51V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: tube
Type of diode: Schottky rectifying
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SBRD8835LT4G-VF01 ONSEMI mbrd835l-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Mounting: SMD
Case: DPAK
Max. off-state voltage: 35V
Max. forward voltage: 0.41V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
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MC14512BDR2G MC14512BDR2G ONSEMI mc14512b-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; TTL; SMD; SO16; 3÷18VDC; reel,tape
Supply voltage: 3...18V DC
Number of channels: 8
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: data selector
Mounting: SMD
Operating temperature: -40...85°C
Case: SO16
Type of integrated circuit: digital
на замовлення 551 шт:
термін постачання 21-30 дні (днів)
7+67.45 грн
11+37.89 грн
25+32.09 грн
45+20.41 грн
122+19.33 грн
Мінімальне замовлення: 7
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MC74LCX125DTG MC74LCX125DTG ONSEMI MC74LCX125DTG.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Supply voltage: 2...3.6V DC
Number of channels: 4
Kind of output: 3-state
Manufacturer series: LCX
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP14
Type of integrated circuit: digital
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
7+59.96 грн
10+46.32 грн
32+29.08 грн
Мінімальне замовлення: 7
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NTB011N15MC ONSEMI ntb011n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 75.4A
Pulsed drain current: 323A
Power dissipation: 136.4W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP3420DR2G NCP3420DR2G ONSEMI ncp3420-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC
Type of integrated circuit: driver
Supply voltage: 4.6...13.2V DC
Case: SO8
Operating temperature: 0...85°C
Kind of integrated circuit: gate driver; high-side; low-side
Mounting: SMD
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NCP51530BDR2G NCP51530BDR2G ONSEMI ncp51530-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 700V
Output current: -3...3.5A
Impulse rise time: 15ns
Pulse fall time: 15ns
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NCP51561BADWR2G NCP51561BADWR2G ONSEMI ncp51561-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...4.5A
Impulse rise time: 19ns
Pulse fall time: 19ns
Number of channels: 2
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NCP51561BBDWR2G NCP51561BBDWR2G ONSEMI ncp51561-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...4.5A
Impulse rise time: 19ns
Pulse fall time: 19ns
Number of channels: 2
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NCP51705MNTXG ONSEMI ncp51705-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SiC; QFN24; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN24
Supply voltage: -8...0V DC; 10...22V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...6A
Impulse rise time: 15ns
Pulse fall time: 15ns
Technology: SiC
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NCP81151BMNTBG ONSEMI ncp81151b-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
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NCP81075MTTXG ONSEMI ncp81075-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; WDFN10; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: WDFN10
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Output current: -4...4A
Impulse rise time: 8ns
Pulse fall time: 7ns
Number of channels: 2
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NCP51530BMNTWG ONSEMI ncp51530-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN10
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 700V
Output current: -3...3.5A
Impulse rise time: 15ns
Pulse fall time: 15ns
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NCP81075DR2G NCP81075DR2G ONSEMI ncp81075-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Output current: -4...4A
Impulse rise time: 8ns
Pulse fall time: 7ns
Number of channels: 2
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NCP81075MNTXG ONSEMI ncp81075-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Output current: -4...4A
Impulse rise time: 8ns
Pulse fall time: 7ns
Number of channels: 2
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NCP81155MNTXG ONSEMI ncp81155-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
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NCP81253MNTBG ONSEMI ncp81253-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
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NCP5901BDR2G NCP5901BDR2G ONSEMI ncp5901b-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
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NCP5901DR2G NCP5901DR2G ONSEMI ncp5901-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
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NCP5901MNTBG ONSEMI ncp5901-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
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NCP81152MNTWG ONSEMI ncp81152-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; QFN16
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN16
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
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NCP81062MNTWG ONSEMI ncp81062-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
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NCP81145MNTBG ONSEMI ncp81145-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
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NCP81146MNTBG ONSEMI ncp81146-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -40...125°C
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US1DFA us1mfa-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
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NRVUS1DFA
NRVUS1DFA
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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FODM452 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5B6C2718A63CA17&compId=FODM452.pdf?ci_sign=52e262679e4e9dd89aabd4f074cb6a8428109fa1
FODM452
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1Mbps; 15kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 20-50%@16mA
Transfer rate: 1Mbps
Case: Mini-flat 5pin
Slew rate: 15kV/μs
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FODM452R2 fodm453-d.pdf
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; 1Mbps; MFP5
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 20-50%@16mA
Transfer rate: 1Mbps
Case: MFP5
Max. off-state voltage: 5V
Output voltage: -500mV...20V
Manufacturer series: FODM452
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FST3257MTCX ONSM-S-A0003586743-1.pdf?t.download=true&u=5oefqw
FST3257MTCX
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 4
Type of integrated circuit: analog switch
Kind of integrated circuit: bus switch; demultiplexer; multiplexer
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 3µA
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FSTD16211MTDX pVersion=0046&contRep=ZT&docId=005056AB752F1ED781969BB8EE1FC259&compId=FSTD16211.pdf?ci_sign=cc34958480078b168d2800a25996f1b0e2584c56
FSTD16211MTDX
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; 24bit,bus switch; SMD; TSSOP56; 4.5÷5.5VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: 24bit; bus switch
Mounting: SMD
Case: TSSOP56
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 10µA
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MC74HC1G32DFT2G-L22038 mc74hc1g32-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+3.26 грн
Мінімальне замовлення: 3000
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FDMT80080DC fdmt80080dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Mounting: SMD
Case: DFNW8
Drain-source voltage: 80V
Drain current: 160A
On-state resistance: 2.22mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 273nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1453A
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FDC6321C FDC6321C.pdf
FDC6321C
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 2.3/1.5nC
Technology: PowerTrench®
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
On-state resistance: 720/1220mΩ
Type of transistor: N/P-MOSFET
на замовлення 1433 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+54.13 грн
14+28.92 грн
25+25.67 грн
47+19.64 грн
128+18.64 грн
250+18.56 грн
500+17.86 грн
Мінімальне замовлення: 8
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HUF75545P3 HUF75545P3.pdf
HUF75545P3
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB
Type of transistor: N-MOSFET
Case: TO220AB
Drain-source voltage: 80V
Drain current: 73A
On-state resistance: 10mΩ
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 235nC
Technology: UltraFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
на замовлення 153 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+200.69 грн
8+127.59 грн
20+120.63 грн
Мінімальне замовлення: 3
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HUF75545S3ST HUF75545S3S-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
800+149.06 грн
Мінімальне замовлення: 800
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CAT5113VI-00-GT3 CAT5113.PDF
CAT5113VI-00-GT3
Виробник: ONSEMI
Category: Digital potentiometers
Description: IC: digital potentiometer; 100kΩ; Up/Down Protocol; 5bit; SO8; SMD
Type of integrated circuit: digital potentiometer
Resistance: 100kΩ
Interface: Up/Down Protocol
Converter resolution: 5bit
Case: SO8
Mounting: SMD
Kind of memory: non-volatile
Operating temperature: -40...85°C
Number of channels: 1
Number of positions: 100
Supply voltage: 2.5...6V
Max INL: ±1LSB
Max DNL: ±0.5LSB
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MMBD1205 mmbd1202-d.pdf
MMBD1205
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. off-state voltage: 100V
Load current: 0.2A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Semiconductor structure: common anode; double
Reverse recovery time: 4ns
Leakage current: 0.1mA
Power dissipation: 0.35W
Type of diode: switching
Capacitance: 2pF
на замовлення 2897 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+12.49 грн
49+7.96 грн
70+5.57 грн
100+4.76 грн
281+3.21 грн
772+3.04 грн
1000+2.92 грн
Мінімальне замовлення: 34
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MPSA29-D26Z pVersion=0046&contRep=ZT&docId=005056AB752F1ED881CFD619F4896A18&compId=MPSA29.pdf?ci_sign=02abb5203c37a2836b2d1243f4d1b73de31d3e49
MPSA29-D26Z
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Case: TO92
Frequency: 125MHz
Collector-emitter voltage: 100V
Current gain: 10k
Collector current: 0.8A
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.625W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: Darlington
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LM431SACM3X lm431sa-d.pdf
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+6.25 грн
Мінімальне замовлення: 3000
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LM431CCZ lm431a-d.pdf
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+7.08 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
LM431SCCM3X lm431sa-d.pdf
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 5490 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+3.56 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MOC3012M MOC3012M.pdf
MOC3012M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; triac; DIP6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC301XM
на замовлення 666 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+55.79 грн
15+27.14 грн
40+23.12 грн
50+22.81 грн
100+21.11 грн
Мінімальне замовлення: 8
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74LCX245MTC 74LCX245MTC.pdf
74LCX245MTC
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: tube
Manufacturer series: LCX
Kind of integrated circuit: bidirectional; transceiver
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP20
на замовлення 808 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+103.26 грн
11+36.58 грн
25+32.55 грн
73+29.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
74LCX245BQX 74LCX245-D.PDF
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; WQFN20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: WQFN20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
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MC74LCX245DWG mc74lcx245-d.pdf
MC74LCX245DWG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
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MC74LCX245DTG mc74lcx245-d.pdf
MC74LCX245DTG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
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MC74LCX245DTR2G mc74lcx245-d.pdf
MC74LCX245DTR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
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MC74LCX245DWR2G mc74lcx245-d.pdf
MC74LCX245DWR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
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MC74LCX245MNTWG MC74LCX245-D.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; QFN20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: QFN20
Manufacturer series: LCX
Supply voltage: 1.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCX
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NSVR0320MW2T1G nsr0320mw2t1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 5A
Kind of package: reel; tape
Application: automotive industry
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+28.31 грн
22+18.33 грн
50+14.46 грн
100+12.99 грн
106+8.58 грн
290+8.12 грн
1500+8.04 грн
3000+7.81 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
FDD6670A FDD6670A-D.pdf 6eb98cb5d24ebe1d1ece7fc59f76ef36.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; DPAK
Power dissipation: 63W
Polarisation: unipolar
Kind of package: reel; tape
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
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NRVHPM120T3G nhpm120-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V
Max. off-state voltage: 200V
Max. load current: 2A
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 30A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: POWERMITE
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MUR440RLG mur420-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 4A; reel,tape; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO201AD
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MC33164D-3R2G mc34164-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
на замовлення 62500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+29.31 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
MC34164D-5G mc34164-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
на замовлення 1614 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
98+41.14 грн
Мінімальне замовлення: 98
В кошику  од. на суму  грн.
MUN2214T1G MUN2214.PDF
MUN2214T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.23W
на замовлення 5580 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.49 грн
73+5.34 грн
100+4.77 грн
500+1.81 грн
1372+1.71 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
MUN2233T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EABAFB684AC749&compId=MUN2233.PDF?ci_sign=3447858b8727e1712f440bf1106571edd32a1003
MUN2233T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.23W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC59
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MUN2212T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EAB018FD750749&compId=MUN2212.PDF?ci_sign=1438ccdcdd99a1fb568e0c71ceafba830b3072f4
MUN2212T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.23W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Case: SC59
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
SMUN2214T1G dtc114y-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.23W
Application: automotive industry
на замовлення 2740 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+10.83 грн
59+6.57 грн
80+4.86 грн
100+4.31 грн
407+2.22 грн
1117+2.10 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
NVMFD5877NLT1G nvmfd5877nl-d.pdf
NVMFD5877NLT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm
Case: DFN8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 12W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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SBRD8835LG mbrd835l-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; tube
Mounting: SMD
Case: DPAK
Max. off-state voltage: 35V
Max. forward voltage: 0.51V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: tube
Type of diode: Schottky rectifying
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SBRD8835LT4G-VF01 mbrd835l-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Mounting: SMD
Case: DPAK
Max. off-state voltage: 35V
Max. forward voltage: 0.41V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
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MC14512BDR2G mc14512b-d.pdf
MC14512BDR2G
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; TTL; SMD; SO16; 3÷18VDC; reel,tape
Supply voltage: 3...18V DC
Number of channels: 8
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: data selector
Mounting: SMD
Operating temperature: -40...85°C
Case: SO16
Type of integrated circuit: digital
на замовлення 551 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+67.45 грн
11+37.89 грн
25+32.09 грн
45+20.41 грн
122+19.33 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MC74LCX125DTG MC74LCX125DTG.pdf
MC74LCX125DTG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Supply voltage: 2...3.6V DC
Number of channels: 4
Kind of output: 3-state
Manufacturer series: LCX
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP14
Type of integrated circuit: digital
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+59.96 грн
10+46.32 грн
32+29.08 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NTB011N15MC ntb011n15mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 75.4A
Pulsed drain current: 323A
Power dissipation: 136.4W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP3420DR2G ncp3420-d.pdf
NCP3420DR2G
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC
Type of integrated circuit: driver
Supply voltage: 4.6...13.2V DC
Case: SO8
Operating temperature: 0...85°C
Kind of integrated circuit: gate driver; high-side; low-side
Mounting: SMD
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NCP51530BDR2G ncp51530-d.pdf
NCP51530BDR2G
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 700V
Output current: -3...3.5A
Impulse rise time: 15ns
Pulse fall time: 15ns
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NCP51561BADWR2G ncp51561-d.pdf
NCP51561BADWR2G
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...4.5A
Impulse rise time: 19ns
Pulse fall time: 19ns
Number of channels: 2
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NCP51561BBDWR2G ncp51561-d.pdf
NCP51561BBDWR2G
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...4.5A
Impulse rise time: 19ns
Pulse fall time: 19ns
Number of channels: 2
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NCP51705MNTXG ncp51705-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SiC; QFN24; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN24
Supply voltage: -8...0V DC; 10...22V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...6A
Impulse rise time: 15ns
Pulse fall time: 15ns
Technology: SiC
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NCP81151BMNTBG ncp81151b-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
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NCP81075MTTXG ncp81075-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; WDFN10; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: WDFN10
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Output current: -4...4A
Impulse rise time: 8ns
Pulse fall time: 7ns
Number of channels: 2
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NCP51530BMNTWG ncp51530-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN10
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 700V
Output current: -3...3.5A
Impulse rise time: 15ns
Pulse fall time: 15ns
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NCP81075DR2G ncp81075-d.pdf
NCP81075DR2G
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Output current: -4...4A
Impulse rise time: 8ns
Pulse fall time: 7ns
Number of channels: 2
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NCP81075MNTXG ncp81075-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Output current: -4...4A
Impulse rise time: 8ns
Pulse fall time: 7ns
Number of channels: 2
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NCP81155MNTXG ncp81155-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
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NCP81253MNTBG ncp81253-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
товару немає в наявності
В кошику  од. на суму  грн.
NCP5901BDR2G ncp5901b-d.pdf
NCP5901BDR2G
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товару немає в наявності
В кошику  од. на суму  грн.
NCP5901DR2G ncp5901-d.pdf
NCP5901DR2G
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товару немає в наявності
В кошику  од. на суму  грн.
NCP5901MNTBG ncp5901-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товару немає в наявності
В кошику  од. на суму  грн.
NCP81152MNTWG ncp81152-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; QFN16
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN16
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
товару немає в наявності
В кошику  од. на суму  грн.
NCP81062MNTWG ncp81062-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товару немає в наявності
В кошику  од. на суму  грн.
NCP81145MNTBG ncp81145-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
NCP81146MNTBG ncp81146-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
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