| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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MRA4005T1G | ONSEMI |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.1V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAV4109V-GT2 | ONSEMI |
Category: LED drivers Description: IC: driver; LED driver; SO16; 175mA; Ch: 3; 3÷5.5VDC; Iout max: 200mA Application: automotive industry Supply voltage: 3...5.5V DC Maximum output current: 200mA Output current: 0.175A Type of integrated circuit: driver Operating temperature: -40...125°C Kind of package: reel; tape Case: SO16 Kind of integrated circuit: LED driver Number of channels: 3 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGF1M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 0.5µs Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Features of semiconductor devices: fast switching Max. off-state voltage: 1kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Capacitance: 8.5pF Type of diode: rectifying |
на замовлення 7000 шт: термін постачання 14-30 дні (днів) |
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RGF1D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 150ns Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Features of semiconductor devices: fast switching Max. off-state voltage: 200V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Capacitance: 8.5pF Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGF1A | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 150ns Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Features of semiconductor devices: fast switching Max. off-state voltage: 50V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Capacitance: 8.5pF Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGF1B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 150ns Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Features of semiconductor devices: fast switching Max. off-state voltage: 0.1kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Capacitance: 8.5pF Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGF1J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 250ns Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Features of semiconductor devices: fast switching Max. off-state voltage: 0.6kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Capacitance: 8.5pF Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGF1K | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; reel,tape Reverse recovery time: 0.5µs Mounting: SMD Max. forward voltage: 1.3V Max. off-state voltage: 0.8kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NRVRGF1D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 150ns Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Application: automotive industry Max. off-state voltage: 200V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NRVRGF1J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 250ns Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Application: automotive industry Max. off-state voltage: 0.6kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: rectifying |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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NRVRGF1M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1000V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 0.5µs Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Application: automotive industry Max. off-state voltage: 1kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCH47N60-F133 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 0.27µC |
на замовлення 421 шт: термін постачання 14-30 дні (днів) |
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FCH47N60F-F133 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.21µC |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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FCA47N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.27µC |
на замовлення 29 шт: термін постачання 14-30 дні (днів) |
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FCP7N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 83W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 21A Gate charge: 23nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FCI7N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 83W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 21A Gate charge: 23nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
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FCA47N60-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.27µC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FCA47N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO3P Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.21µC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NL27WZ86USG | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: US8 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 10µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CPH6001A-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 0.8W; CPH6 Mounting: SMD Case: CPH6 Kind of package: reel; tape Collector-emitter voltage: 12V Power dissipation: 0.8W Polarisation: bipolar Kind of transistor: RF Type of transistor: NPN Collector current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CPH6003A-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 0.15A; 0.8W; CPH6 Mounting: SMD Case: CPH6 Kind of package: reel; tape Collector-emitter voltage: 12V Power dissipation: 0.8W Polarisation: bipolar Kind of transistor: RF Type of transistor: NPN Frequency: 7GHz Collector current: 0.15A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BZX79C2V7-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: BZX79C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR8170TFSTAG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; WDFN8; SMD Type of diode: Schottky rectifying Case: WDFN8 Mounting: SMD Max. forward voltage: 0.89V Max. forward impulse current: 140A Leakage current: 30µA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
| NRVTS360ETFSTAG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; WDFN8; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: WDFN8 Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.9V Max. load current: 6A Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||||
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H11AV1AM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Mounting: THT Insulation voltage: 4.17kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Turn-on time: 15µs Case: DIP6 Turn-off time: 15µs Number of channels: 1 Collector-emitter voltage: 70V CTR@If: 100-300%@10mA Kind of output: transistor |
на замовлення 1667 шт: термін постачання 14-30 дні (днів) |
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FDH300ATR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
на замовлення 6310 шт: термін постачання 14-30 дні (днів) |
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FDH300A | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; bulk Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: bulk |
на замовлення 3030 шт: термін постачання 14-30 дні (днів) |
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| FDH300TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDH333 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1.15V Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Case: DO35 Kind of package: bulk Max. forward voltage: 1.15V Power dissipation: 0.5W Max. load current: 0.6A Leakage current: 0.5µA Capacitance: 6pF |
на замовлення 894 шт: термін постачання 14-30 дні (днів) |
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| FDH333TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| MRA4005T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| CAV4109V-GT2 |
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Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SO16; 175mA; Ch: 3; 3÷5.5VDC; Iout max: 200mA
Application: automotive industry
Supply voltage: 3...5.5V DC
Maximum output current: 200mA
Output current: 0.175A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SO16
Kind of integrated circuit: LED driver
Number of channels: 3
Mounting: SMD
Category: LED drivers
Description: IC: driver; LED driver; SO16; 175mA; Ch: 3; 3÷5.5VDC; Iout max: 200mA
Application: automotive industry
Supply voltage: 3...5.5V DC
Maximum output current: 200mA
Output current: 0.175A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SO16
Kind of integrated circuit: LED driver
Number of channels: 3
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| RGF1M |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
на замовлення 7000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 30.15 грн |
| 19+ | 23.42 грн |
| 22+ | 19.85 грн |
| 100+ | 10.86 грн |
| 500+ | 10.61 грн |
| RGF1D |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 200V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 200V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
товару немає в наявності
В кошику
од. на суму грн.
| RGF1A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 50V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 50V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
товару немає в наявності
В кошику
од. на суму грн.
| RGF1B |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
товару немає в наявності
В кошику
од. на суму грн.
| RGF1J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 250ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 250ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
товару немає в наявності
В кошику
од. на суму грн.
| RGF1K |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; reel,tape
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward voltage: 1.3V
Max. off-state voltage: 0.8kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; reel,tape
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward voltage: 1.3V
Max. off-state voltage: 0.8kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
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| NRVRGF1D |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
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| NRVRGF1J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 250ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 250ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
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Мінімальне замовлення: 3 шт
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| NRVRGF1M |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Application: automotive industry
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Application: automotive industry
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
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| FCH47N60-F133 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
на замовлення 421 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 859.76 грн |
| 5+ | 671.09 грн |
| FCH47N60F-F133 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 843.31 грн |
| 10+ | 693.14 грн |
| FCA47N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 956.60 грн |
| 10+ | 761.86 грн |
| FCP7N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
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| FCI7N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
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Мінімальне замовлення: 1000 шт
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| FCA47N60-F109 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
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| FCA47N60F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
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| NL27WZ86USG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
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| CPH6001A-TL-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 0.8W; CPH6
Mounting: SMD
Case: CPH6
Kind of package: reel; tape
Collector-emitter voltage: 12V
Power dissipation: 0.8W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 0.8W; CPH6
Mounting: SMD
Case: CPH6
Kind of package: reel; tape
Collector-emitter voltage: 12V
Power dissipation: 0.8W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Collector current: 0.1A
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| CPH6003A-TL-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.15A; 0.8W; CPH6
Mounting: SMD
Case: CPH6
Kind of package: reel; tape
Collector-emitter voltage: 12V
Power dissipation: 0.8W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Frequency: 7GHz
Collector current: 0.15A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.15A; 0.8W; CPH6
Mounting: SMD
Case: CPH6
Kind of package: reel; tape
Collector-emitter voltage: 12V
Power dissipation: 0.8W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Frequency: 7GHz
Collector current: 0.15A
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| BZX79C2V7-T50A |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
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| MBR8170TFSTAG |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. forward voltage: 0.89V
Max. forward impulse current: 140A
Leakage current: 30µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. forward voltage: 0.89V
Max. forward impulse current: 140A
Leakage current: 30µA
товару немає в наявності
Мінімальне замовлення: 1500 шт
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| NRVTS360ETFSTAG |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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Мінімальне замовлення: 3 шт
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| H11AV1AM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Mounting: THT
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 15µs
Case: DIP6
Turn-off time: 15µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 100-300%@10mA
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Mounting: THT
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 15µs
Case: DIP6
Turn-off time: 15µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 100-300%@10mA
Kind of output: transistor
на замовлення 1667 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.03 грн |
| 16+ | 27.74 грн |
| 50+ | 22.74 грн |
| FDH300ATR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
на замовлення 6310 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 10.05 грн |
| 73+ | 5.85 грн |
| 110+ | 3.89 грн |
| 500+ | 2.95 грн |
| 1000+ | 2.62 грн |
| 2000+ | 2.36 грн |
| 2500+ | 2.28 грн |
| 5000+ | 2.10 грн |
| FDH300A |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; bulk
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; bulk
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
на замовлення 3030 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 10.05 грн |
| 81+ | 5.26 грн |
| 93+ | 4.58 грн |
| 123+ | 3.46 грн |
| 500+ | 2.79 грн |
| 1000+ | 2.53 грн |
| 2000+ | 2.39 грн |
| FDH300TR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
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| FDH333 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1.15V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Case: DO35
Kind of package: bulk
Max. forward voltage: 1.15V
Power dissipation: 0.5W
Max. load current: 0.6A
Leakage current: 0.5µA
Capacitance: 6pF
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.2A; Ifsm: 1A; DO35; bulk; Ufmax: 1.15V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Case: DO35
Kind of package: bulk
Max. forward voltage: 1.15V
Power dissipation: 0.5W
Max. load current: 0.6A
Leakage current: 0.5µA
Capacitance: 6pF
на замовлення 894 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.14 грн |
| 66+ | 6.45 грн |
| 100+ | 4.73 грн |
| 500+ | 3.53 грн |
| FDH333TR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
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В кошику
од. на суму грн.