Продукція > ONSEMI > Всі товари виробника ONSEMI (147187) > Сторінка 2445 з 2454

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FDP4D5N10C FDP4D5N10C ONSEMI fdp4d5n10c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 150W; TO220-3
Pulsed drain current: 512A
Power dissipation: 150W
Gate charge: 48nC
Polarisation: unipolar
Drain current: 128A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 4.5mΩ
Mounting: THT
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US1AFA US1AFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Kind of package: reel; tape
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NTR4170NT1G NTR4170NT1G ONSEMI ntr4170n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1359 шт:
термін постачання 14-30 дні (днів)
13+34.66 грн
16+27.07 грн
18+23.69 грн
50+16.42 грн
100+14.03 грн
500+9.99 грн
1000+8.91 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
NTE4153NT1G ONSEMI nta4153n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.66A
Power dissipation: 0.3W
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3504 шт:
термін постачання 14-30 дні (днів)
13+35.55 грн
17+24.92 грн
22+19.64 грн
50+8.42 грн
100+5.86 грн
500+5.78 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
LM555CN LM555CN ONSEMI LM555.pdf description Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Supply voltage: 4.5...16V DC
Case: DIP8
DC supply current: 7.5mA
Output current: 0.2A
Mounting: THT
Operating temperature: 0...70°C
Kind of package: tube
Number of channels: 1
Controlled voltage: 10V
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 Мінімальне замовлення: 3 шт
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UJ3N065080K3S ONSEMI uj3n065080k3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 24A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
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UJ3N065025K3S ONSEMI UJ3N065025K3S-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 250A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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UJ3N120035K3S ONSEMI UJ3N120035K3S-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 46A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 185A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 76mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
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UJ3N120065K3S ONSEMI UJ3N120065K3S-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 25A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 254W
Case: TO247-3
Gate-source voltage: -30...20V
On-state resistance: 142mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhancement
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UF3N120007K4S ONSEMI uf3n120007k4s-d.pdf Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; 1.2kV; 120A; 789W
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 120A
Pulsed drain current: 550A
Power dissipation: 789W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 830nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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 Мінімальне замовлення: 600 шт
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P6KE160A P6KE160A ONSEMI littelfuse_tvs_diode_p6ke_datasheet.pdf?assetguid=620a3cb5-3282-4670-8b03-66f21bc75523 FAIRS45056-1.pdf?t.download=true&u=5oefqw p6ke%20series(600w,5.8v_513v).pdf p6ke68.pdf P6KE%20SERIES%20N0157%20REV.C.pdf P6KE SERIES_P2203.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 152V; 2.7A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
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FJP1943RTU FJP1943RTU ONSEMI FAIR-S-A0002366282-1.pdf?t.download=true&u=5oefqw fjp1943-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 230V; 15A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 230V
Collector current: 15A
Power dissipation: 80W
Case: TO220AB
Current gain: 55...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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MJE15029G MJE15029G ONSEMI MJE15031G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
3+178.64 грн
4+134.52 грн
10+92.43 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
74ACT14SCX 74ACT14SCX ONSEMI 74AC14-D.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Kind of package: reel; tape
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74ACT14MTC 74ACT14MTC ONSEMI 74AC14-D.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Kind of input: with Schmitt trigger
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Number of inputs: 1
Kind of package: tube
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2SC4135T-TL-E 2SC4135T-TL-E ONSEMI 2SA1593-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Collector-emitter voltage: 100V
Power dissipation: 1W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...400
Frequency: 120MHz
Collector current: 2A
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NCP167AMX330TBG ONSEMI ncp167-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 3.3V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
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 Мінімальне замовлення: 5000 шт
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NCP167AMX180TBG ONSEMI ncp167-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 1.8V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
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ADP3211AMNR2G ONSEMI adp3211-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; QFN32; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
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NCP171AMX165160TCG ONSEMI ncp171-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.65V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Output voltage: 1.65V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
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NCP171AMX180175TCG ONSEMI ncp171-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Voltage drop: 0.11V
Output voltage: 1.8V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
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NCP171AMX330310TCG ONSEMI ncp171-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Voltage drop: 55mV
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
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NTLUS030N03CTAG ONSEMI ntlus030n03c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 3.7nC
Kind of package: reel; tape
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 Мінімальне замовлення: 3000 шт
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MBR2045MFST1G ONSEMI mbr2045mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Case: DFN5x6
Max. forward voltage: 0.61V
Max. forward impulse current: 0.4kA
Kind of package: reel; tape
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FQA40N25 FQA40N25 ONSEMI fqa40n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Mounting: THT
Pulsed drain current: 160A
Power dissipation: 280W
Gate charge: 110nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO3PN
On-state resistance: 70mΩ
на замовлення 206 шт:
термін постачання 14-30 дні (днів)
2+327.07 грн
5+226.95 грн
10+192.29 грн
30+185.69 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
74VHC00MTCX 74VHC00MTCX ONSEMI 74VHC00.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: VHC
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
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 Мінімальне замовлення: 2500 шт
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HCPL0501 HCPL0501 ONSEMI HCPL0501.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
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 Мінімальне замовлення: 3000 шт
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HCPL0501R2 HCPL0501R2 ONSEMI HCPL0501R2.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
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 Мінімальне замовлення: 2500 шт
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GBU8KS GBU8KS ONSEMI GBU8KS.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FDMF5062 ONSEMI PdfFile_234708.pdf Category: Power switches - integrated circuits
Description: IC: driver; high-side; PQFN; MOSFET; Uoper: 30V; Usup: 5÷12V
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: PQFN
Supply voltage: 5...12V
Mounting: SMD
Integrated circuit features: MOSFET
Operating voltage: 30V
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 Мінімальне замовлення: 3000 шт
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FDC6306P FDC6306P ONSEMI FDC6306P.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.9A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDC640P FDC640P ONSEMI FDC640P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
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FDC6310P FDC6310P ONSEMI FDC6310P-D.PDF Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 184mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDC6329L FDC6329L ONSEMI FDC6329L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 2.5...8V DC
Control voltage: 1.5...8V DC
Output current: 2.5A
Type of integrated circuit: power switch
Kind of output: P-Channel
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 Мінімальне замовлення: 3000 шт
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FDC642P ONSEMI FDC642P-D.PDF ONSM-S-A0003579657-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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 Мінімальне замовлення: 3000 шт
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FDC654P ONSEMI FDC654P-D.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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FDC6320C ONSEMI FAIRS15832-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 9/10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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FDC6326L ONSEMI FDC6326L-D.PDF Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 3...20V DC
Control voltage: 2.5...8V DC
Output current: 1.8A
Type of integrated circuit: power switch
Kind of output: P-Channel
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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NTGS4111PT1G ONSEMI ntgs4111p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Power dissipation: 1.25W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NRVBBS20100CTT4G NRVBBS20100CTT4G ONSEMI mbrb20100ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 10A x2
Max. load current: 20A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Mounting: SMD
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NCS2202AMUTBG ONSEMI ncs2200-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; uDFN6; 1pA
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: uDFN6
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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QED223 QED223 ONSEMI QED223.PDF Category: IR LEDs
Description: IR transmitter; 5mm; 880nm; diffused,violet; 25mW; 30°; 1.7VDC
Type of diode: IR transmitter
LED diameter: 5mm
Wavelength: 880nm
LED lens: diffused; violet
Radiant power: 25mW
Viewing angle: 30°
Mounting: THT
Wavelength of peak sensitivity: 890nm
Shape: round
Operating voltage: 1.7V DC
LED current: 100mA
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
13+36.44 грн
17+24.68 грн
25+21.46 грн
50+19.64 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
FDB2710 FDB2710 ONSEMI FDB2710.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 260W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 36.3mΩ
Mounting: SMD
Gate charge: 101nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 771 шт:
термін постачання 14-30 дні (днів)
2+390.17 грн
6+314.43 грн
10+291.32 грн
25+245.11 грн
100+202.19 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MMBTA06LT3G MMBTA06LT3G ONSEMI mmbta05lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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FDMQ8205 ONSEMI FDMQ8205.pdf Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: driver
Technology: GreenBridge™ 2
Kind of package: reel; tape
Case: WDFN12
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
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FDMQ8403 ONSEMI fdmq8403-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12
Mounting: SMD
Pulsed drain current: 12A
Power dissipation: 17W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET x4
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN12
On-state resistance: 191mΩ
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NCP4307FBSNT1G ONSEMI ncp4307-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
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NCV21874DR2G ONSEMI ncs21871-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 4; 1.8÷5.5VDC; SO14; 0.045mV
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
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SZ1SMA5920BT3G SZ1SMA5920BT3G ONSEMI 1SMA59xxBT3.PDF Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.2V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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SZ1SMA5919BT3G SZ1SMA5919BT3G ONSEMI 1SMA59xxBT3.PDF Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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NTMJS0D7N03CGTWG ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 410A; Idm: 900A; 188W; LFPAK8
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 188W
Gate charge: 147nC
Polarisation: unipolar
Drain current: 410A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK8
On-state resistance: 0.65mΩ
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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NTB6410ANT4G NTB6410ANT4G ONSEMI ntb6410an-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; D2PAK
Mounting: SMD
Pulsed drain current: 305A
Power dissipation: 188W
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 13mΩ
товару немає в наявності
 Мінімальне замовлення: 800 шт
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NTP6410ANG NTP6410ANG ONSEMI ntb6410an-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; TO220-3
Mounting: THT
Pulsed drain current: 305A
Power dissipation: 188W
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO220-3
On-state resistance: 13mΩ
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FQP4N20L FQP4N20L ONSEMI fqp4n20l-d.pdf FQP4N20L-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 45W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.4A
Pulsed drain current: 15.2A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
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FDP032N08B-F102 FDP032N08B-F102 ONSEMI fdp032n08b-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 3.3mΩ
Mounting: THT
Pulsed drain current: 844A
Power dissipation: 263W
Gate charge: 111nC
Polarisation: unipolar
Drain current: 211A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
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MC74ACT573DWG ONSEMI MC74AC573-D.pdf Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: tube
Manufacturer series: ACT
Technology: TTL
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MC74ACT573DTR2G MC74ACT573DTR2G ONSEMI MC74AC573-D.pdf Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: ACT
Technology: TTL
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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MC74ACT573DWR2G ONSEMI MC74AC573-D.pdf Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: ACT
Technology: TTL
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FCD3400N80Z FCD3400N80Z ONSEMI FCU3400N80Z-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 32W
Gate charge: 9.6nC
Polarisation: unipolar
Drain current: 1.2A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 3.4Ω
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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NTD18N06LT4G NTD18N06LT4G ONSEMI ntd18n06l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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FDP4D5N10C fdp4d5n10c-d.pdf
FDP4D5N10C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 150W; TO220-3
Pulsed drain current: 512A
Power dissipation: 150W
Gate charge: 48nC
Polarisation: unipolar
Drain current: 128A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 4.5mΩ
Mounting: THT
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US1AFA us1mfa-d.pdf
US1AFA
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Kind of package: reel; tape
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NTR4170NT1G ntr4170n-d.pdf
NTR4170NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1359 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
13+34.66 грн
16+27.07 грн
18+23.69 грн
50+16.42 грн
100+14.03 грн
500+9.99 грн
1000+8.91 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
NTE4153NT1G nta4153n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.66A
Power dissipation: 0.3W
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3504 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
13+35.55 грн
17+24.92 грн
22+19.64 грн
50+8.42 грн
100+5.86 грн
500+5.78 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
LM555CN description LM555.pdf
LM555CN
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Supply voltage: 4.5...16V DC
Case: DIP8
DC supply current: 7.5mA
Output current: 0.2A
Mounting: THT
Operating temperature: 0...70°C
Kind of package: tube
Number of channels: 1
Controlled voltage: 10V
товару немає в наявності
Мінімальне замовлення: 3 шт
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UJ3N065080K3S uj3n065080k3s-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 24A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
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UJ3N065025K3S UJ3N065025K3S-D.PDF
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 250A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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UJ3N120035K3S UJ3N120035K3S-D.PDF
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 46A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 185A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 76mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
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UJ3N120065K3S UJ3N120065K3S-D.PDF
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 25A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 254W
Case: TO247-3
Gate-source voltage: -30...20V
On-state resistance: 142mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhancement
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UF3N120007K4S uf3n120007k4s-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; 1.2kV; 120A; 789W
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 120A
Pulsed drain current: 550A
Power dissipation: 789W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 830nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
Мінімальне замовлення: 600 шт
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P6KE160A littelfuse_tvs_diode_p6ke_datasheet.pdf?assetguid=620a3cb5-3282-4670-8b03-66f21bc75523 FAIRS45056-1.pdf?t.download=true&u=5oefqw p6ke%20series(600w,5.8v_513v).pdf p6ke68.pdf P6KE%20SERIES%20N0157%20REV.C.pdf P6KE SERIES_P2203.pdf
P6KE160A
Виробник: ONSEMI
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 152V; 2.7A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
FJP1943RTU FAIR-S-A0002366282-1.pdf?t.download=true&u=5oefqw fjp1943-d.pdf
FJP1943RTU
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 230V; 15A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 230V
Collector current: 15A
Power dissipation: 80W
Case: TO220AB
Current gain: 55...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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MJE15029G MJE15031G.PDF
MJE15029G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+178.64 грн
4+134.52 грн
10+92.43 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
74ACT14SCX 74AC14-D.PDF
74ACT14SCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Kind of package: reel; tape
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74ACT14MTC 74AC14-D.PDF
74ACT14MTC
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Kind of input: with Schmitt trigger
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Number of inputs: 1
Kind of package: tube
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2SC4135T-TL-E 2SA1593-D.PDF
2SC4135T-TL-E
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Collector-emitter voltage: 100V
Power dissipation: 1W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...400
Frequency: 120MHz
Collector current: 2A
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NCP167AMX330TBG ncp167-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 3.3V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
NCP167AMX180TBG ncp167-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 1.8V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
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ADP3211AMNR2G adp3211-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; QFN32; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
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NCP171AMX165160TCG ncp171-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.65V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Output voltage: 1.65V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
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NCP171AMX180175TCG ncp171-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Voltage drop: 0.11V
Output voltage: 1.8V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
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NCP171AMX330310TCG ncp171-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Voltage drop: 55mV
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
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NTLUS030N03CTAG ntlus030n03c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 3.7nC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MBR2045MFST1G mbr2045mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Case: DFN5x6
Max. forward voltage: 0.61V
Max. forward impulse current: 0.4kA
Kind of package: reel; tape
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FQA40N25 fqa40n25-d.pdf
FQA40N25
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Mounting: THT
Pulsed drain current: 160A
Power dissipation: 280W
Gate charge: 110nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO3PN
On-state resistance: 70mΩ
на замовлення 206 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+327.07 грн
5+226.95 грн
10+192.29 грн
30+185.69 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
74VHC00MTCX 74VHC00.pdf
74VHC00MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: VHC
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
HCPL0501 HCPL0501.pdf
HCPL0501
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
HCPL0501R2 HCPL0501R2.pdf
HCPL0501R2
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
GBU8KS GBU8KS.pdf
GBU8KS
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FDMF5062 PdfFile_234708.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; high-side; PQFN; MOSFET; Uoper: 30V; Usup: 5÷12V
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: PQFN
Supply voltage: 5...12V
Mounting: SMD
Integrated circuit features: MOSFET
Operating voltage: 30V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDC6306P FDC6306P.pdf
FDC6306P
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.9A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDC640P FDC640P.pdf
FDC640P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
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FDC6310P FDC6310P-D.PDF
FDC6310P
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 184mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDC6329L FDC6329L.pdf
FDC6329L
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 2.5...8V DC
Control voltage: 1.5...8V DC
Output current: 2.5A
Type of integrated circuit: power switch
Kind of output: P-Channel
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDC642P FDC642P-D.PDF ONSM-S-A0003579657-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDC654P FDC654P-D.PDF
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDC6320C FAIRS15832-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 9/10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDC6326L FDC6326L-D.PDF
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 3...20V DC
Control voltage: 2.5...8V DC
Output current: 1.8A
Type of integrated circuit: power switch
Kind of output: P-Channel
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NTGS4111PT1G ntgs4111p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Power dissipation: 1.25W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NRVBBS20100CTT4G mbrb20100ct-d.pdf
NRVBBS20100CTT4G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 10A x2
Max. load current: 20A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Mounting: SMD
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NCS2202AMUTBG ncs2200-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; uDFN6; 1pA
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: uDFN6
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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QED223 QED223.PDF
QED223
Виробник: ONSEMI
Category: IR LEDs
Description: IR transmitter; 5mm; 880nm; diffused,violet; 25mW; 30°; 1.7VDC
Type of diode: IR transmitter
LED diameter: 5mm
Wavelength: 880nm
LED lens: diffused; violet
Radiant power: 25mW
Viewing angle: 30°
Mounting: THT
Wavelength of peak sensitivity: 890nm
Shape: round
Operating voltage: 1.7V DC
LED current: 100mA
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
13+36.44 грн
17+24.68 грн
25+21.46 грн
50+19.64 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
FDB2710 FDB2710.pdf
FDB2710
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 260W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 36.3mΩ
Mounting: SMD
Gate charge: 101nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 771 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+390.17 грн
6+314.43 грн
10+291.32 грн
25+245.11 грн
100+202.19 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MMBTA06LT3G mmbta05lt1-d.pdf
MMBTA06LT3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
FDMQ8205 FDMQ8205.pdf
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: driver
Technology: GreenBridge™ 2
Kind of package: reel; tape
Case: WDFN12
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
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FDMQ8403 fdmq8403-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12
Mounting: SMD
Pulsed drain current: 12A
Power dissipation: 17W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET x4
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN12
On-state resistance: 191mΩ
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NCP4307FBSNT1G ncp4307-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
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NCV21874DR2G ncs21871-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 4; 1.8÷5.5VDC; SO14; 0.045mV
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
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SZ1SMA5920BT3G 1SMA59xxBT3.PDF
SZ1SMA5920BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.2V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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SZ1SMA5919BT3G 1SMA59xxBT3.PDF
SZ1SMA5919BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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NTMJS0D7N03CGTWG
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 410A; Idm: 900A; 188W; LFPAK8
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 188W
Gate charge: 147nC
Polarisation: unipolar
Drain current: 410A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK8
On-state resistance: 0.65mΩ
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Мінімальне замовлення: 3000 шт
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NTB6410ANT4G ntb6410an-d.pdf
NTB6410ANT4G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; D2PAK
Mounting: SMD
Pulsed drain current: 305A
Power dissipation: 188W
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 13mΩ
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Мінімальне замовлення: 800 шт
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NTP6410ANG ntb6410an-d.pdf
NTP6410ANG
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; TO220-3
Mounting: THT
Pulsed drain current: 305A
Power dissipation: 188W
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO220-3
On-state resistance: 13mΩ
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FQP4N20L fqp4n20l-d.pdf FQP4N20L-D.pdf
FQP4N20L
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 45W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.4A
Pulsed drain current: 15.2A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
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FDP032N08B-F102 fdp032n08b-d.pdf
FDP032N08B-F102
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 3.3mΩ
Mounting: THT
Pulsed drain current: 844A
Power dissipation: 263W
Gate charge: 111nC
Polarisation: unipolar
Drain current: 211A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
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MC74ACT573DWG MC74AC573-D.pdf
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: tube
Manufacturer series: ACT
Technology: TTL
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MC74ACT573DTR2G MC74AC573-D.pdf
MC74ACT573DTR2G
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: ACT
Technology: TTL
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Мінімальне замовлення: 2500 шт
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MC74ACT573DWR2G MC74AC573-D.pdf
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: ACT
Technology: TTL
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FCD3400N80Z FCU3400N80Z-D.pdf
FCD3400N80Z
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 32W
Gate charge: 9.6nC
Polarisation: unipolar
Drain current: 1.2A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 3.4Ω
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Мінімальне замовлення: 2500 шт
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NTD18N06LT4G ntd18n06l-d.pdf
NTD18N06LT4G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 2500 шт
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