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N02L63W3AB25I N02L63W3AB25I onsemi n02l63w3a-d.pdf Description: IC SRAM 2MBIT PARALLEL 48BGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-BGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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N02L83W2AT25I N02L83W2AT25I onsemi n02l83w2a-d.pdf Description: IC SRAM 2MBIT PARALLEL 32TSOP I
Packaging: Tray
Package / Case: 32-LFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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N04L63W1AT27I N04L63W1AT27I onsemi n04l63w1a-d.pdf Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
Write Cycle Time - Word, Page: 70ns
Part Status: Obsolete
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 70 ns
Memory Interface: Parallel
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N04L63W2AT27I N04L63W2AT27I onsemi n04l63w2a-d.pdf Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 70 ns
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N08L63W2AB27I N08L63W2AB27I onsemi N08L63W2A.pdf Description: IC SRAM 4MBIT PARALLEL 48BGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 48-BGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Packaging: Tray
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N25S818HAS21I N25S818HAS21I onsemi n25s818ha-d.pdf Description: IC SRAM 256KBIT SPI 16MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: SRAM
Clock Frequency: 16 MHz
Technology: SRAM
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 19686 шт:
термін постачання 21-31 дні (днів)
2+179.99 грн
10+158.13 грн
25+153.87 грн
50+143.67 грн
100+128.42 грн
250+128.05 грн
500+124.05 грн
1000+118.78 грн
5000+110.59 грн
Мінімальне замовлення: 2 шт
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N25S818HAT21I N25S818HAT21I onsemi n25s818ha-d.pdf Description: IC SRAM 256KBIT SPI 16MHZ 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-TSSOP
Memory Format: SRAM
Clock Frequency: 16 MHz
Technology: SRAM
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
на замовлення 8108 шт:
термін постачання 21-31 дні (днів)
2+159.38 грн
10+136.14 грн
25+129.87 грн
50+117.60 грн
100+113.46 грн
250+108.21 грн
500+102.68 грн
1000+99.05 грн
5000+91.09 грн
Мінімальне замовлення: 2 шт
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N25S830HAS22I N25S830HAS22I onsemi n25s830ha-d.pdf Description: IC SRAM 256KBIT SPI 20MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: SRAM
Clock Frequency: 20 MHz
Technology: SRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 6447 шт:
термін постачання 21-31 дні (днів)
2+162.55 грн
10+140.80 грн
25+138.63 грн
50+129.79 грн
100+115.96 грн
300+112.15 грн
500+109.91 грн
1000+102.35 грн
5000+92.64 грн
Мінімальне замовлення: 2 шт
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N25S830HAT22I N25S830HAT22I onsemi n25s830ha-d.pdf Description: IC SRAM 256KBIT SPI 20MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Clock Frequency: 20 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Part Status: Active
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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N64S830HAS22I N64S830HAS22I onsemi n64s830ha-d.pdf Description: IC SRAM 64KBIT SPI 20MHZ 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Clock Frequency: 20 MHz
Memory Format: SRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 10159 шт:
термін постачання 21-31 дні (днів)
3+119.73 грн
10+107.66 грн
25+104.61 грн
50+95.96 грн
100+93.76 грн
300+90.26 грн
500+87.19 грн
1000+85.05 грн
5000+80.18 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
N64S830HAT22I N64S830HAT22I onsemi n64s830ha-d.pdf Description: IC SRAM 64KBIT SPI 20MHZ 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Part Status: Last Time Buy
Supplier Device Package: 8-TSSOP
Memory Format: SRAM
Clock Frequency: 20 MHz
Technology: SRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
3+114.18 грн
10+100.94 грн
25+98.16 грн
Мінімальне замовлення: 3 шт
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AMIS30600LINI1RG AMIS30600LINI1RG onsemi amis-30600-d.pdf Description: IC TRANSCEIVER HALF 1/1 8SOIC
Duplex: Half
Receiver Hysteresis: 80 mV
Supplier Device Package: 8-SOIC
Protocol: LINbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AMIS30624C6244RG AMIS30624C6244RG onsemi amis-30624-d.pdf Description: IC MTRDRV BIPLR 4.75-5.5V 20SOIC
Supplier Device Package: 20-SOIC
Voltage - Load: 6.5V ~ 29V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 165°C (TJ)
Interface: I²C
Current - Output: 570mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Step Resolution: 1/2, 1/4, 1/8, 1/16
Motor Type - Stepper: Bipolar
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AMIS30624C6245RG AMIS30624C6245RG onsemi amis-30624-d.pdf Description: IC MTR DRV BIPLR 4.75-5.5V 32QFP
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 165°C (TJ)
Interface: I²C
Current - Output: 570mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 32-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Step Resolution: 1/2, 1/4, 1/8, 1/16
Motor Type - Stepper: Bipolar
Supplier Device Package: 32-NQFP (7x7)
Voltage - Load: 6.5V ~ 29V
Technology: Power MOSFET
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AMIS30660CANH2RG AMIS30660CANH2RG onsemi amis-30660-d.pdf Description: IC TRANSCEIVER HALF 1/1 8SOIC
Duplex: Half
Receiver Hysteresis: 80 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AMIS41682CANM1RG AMIS41682CANM1RG onsemi amis-41682-d.pdf Description: IC TRANSCEIVER HALF 1/1 14SOIC
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 14-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AMIS42665TJAA1RG AMIS42665TJAA1RG onsemi amis-42665-d.pdf Description: IC TRANSCEIVER HALF 1/1 8SOIC
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Data Rate: 1Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AMIS42673ICAG1RG AMIS42673ICAG1RG onsemi AMIS-42673.pdf Description: IC TRANSCEIVER HALF 1/1 8SOIC
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AMIS42675ICAA1RG AMIS42675ICAA1RG onsemi Description: IC TRANSCEIVER HALF 1/1 8SOIC
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AMIS42770ICAW1RG AMIS42770ICAW1RG onsemi AMIS-42770-D.PDF Description: IC TRANSCEIVER HALF 2/2 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 2/2
Protocol: CANbus
Supplier Device Package: 20-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
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AMIS30600LINI1RG AMIS30600LINI1RG onsemi amis-30600-d.pdf Description: IC TRANSCEIVER HALF 1/1 8SOIC
Duplex: Half
Receiver Hysteresis: 80 mV
Supplier Device Package: 8-SOIC
Protocol: LINbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AMIS30660CANH2RG AMIS30660CANH2RG onsemi amis-30660-d.pdf Description: IC TRANSCEIVER HALF 1/1 8SOIC
Duplex: Half
Receiver Hysteresis: 80 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AMIS41682CANM1RG AMIS41682CANM1RG onsemi amis-41682-d.pdf Description: IC TRANSCEIVER HALF 1/1 14SOIC
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 14-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AMIS42665TJAA1RG AMIS42665TJAA1RG onsemi amis-42665-d.pdf Description: IC TRANSCEIVER HALF 1/1 8SOIC
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Data Rate: 1Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AMIS42673ICAG1RG AMIS42673ICAG1RG onsemi AMIS-42673.pdf Description: IC TRANSCEIVER HALF 1/1 8SOIC
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AMIS42675ICAA1RG AMIS42675ICAA1RG onsemi Description: IC TRANSCEIVER HALF 1/1 8SOIC
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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FD6M016N03 FD6M016N03 onsemi FD6M016N03.pdf Description: MOSFET 2N-CH 30V 80A EPM15
Supplier Device Package: EPM15
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 80A
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Through Hole
Package / Case: EPM15
Packaging: Tube
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FDMC8651 FDMC8651 onsemi fdmc8651-d.pdf Description: MOSFET N-CH 30V 15A/20A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+39.67 грн
6000+36.40 грн
Мінімальне замовлення: 3000 шт
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FGA180N33ATTU FGA180N33ATTU onsemi FGA180N33AT.pdf Description: IGBT TRENCH 330V 180A TO-3P
Power - Max: 390 W
Current - Collector Pulsed (Icm): 450 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector (Ic) (Max): 180 A
Part Status: Obsolete
Gate Charge: 169 nC
IGBT Type: Trench
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FGA25N120FTD FGA25N120FTD onsemi FGA25N120FTD.pdf Description: IGBT TRENCH FS 1200V 50A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 770 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/210ns
Switching Energy: 340µJ (on), 900µJ (off)
Test Condition: 600V, 25A, 15Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
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FGA90N33ATDTU FGA90N33ATDTU onsemi FGA90N33ATD.pdf Description: IGBT TRENCH 330V 90A TO3P
Power - Max: 223 W
Current - Collector Pulsed (Icm): 330 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector (Ic) (Max): 90 A
Part Status: Obsolete
Gate Charge: 95 nC
IGBT Type: Trench
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Reverse Recovery Time (trr): 23 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
FGA90N33ATTU FGA90N33ATTU onsemi FGA90N33AT.pdf Description: IGBT TRENCH 330V 90A TO-3P
Power - Max: 223 W
Current - Collector Pulsed (Icm): 330 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector (Ic) (Max): 90 A
Gate Charge: 95 nC
IGBT Type: Trench
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
FDMC8651 FDMC8651 onsemi fdmc8651-d.pdf Description: MOSFET N-CH 30V 15A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 15 V
на замовлення 6340 шт:
термін постачання 21-31 дні (днів)
3+151.45 грн
10+93.46 грн
100+63.24 грн
500+47.21 грн
1000+43.31 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
4N33SM 4N33SM onsemi H11B1M-D.pdf Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
5+66.61 грн
50+35.84 грн
100+32.89 грн
500+25.90 грн
1000+24.27 грн
2000+22.89 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
4N33SR2M 4N33SR2M onsemi H11B1M-D.pdf Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+25.07 грн
2000+22.77 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FAN5350UCX FAN5350UCX onsemi fan5350-d.pdf Description: IC REG BUCK 1.82V 600MA 5WLCSP
Voltage - Output (Min/Fixed): 1.82V
Voltage - Input (Min): 2.7V
Synchronous Rectifier: Yes
Supplier Device Package: 5-WLCSP (0.96x1.33)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 600mA
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
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FAN73832MX FAN73832MX onsemi FAN73832-D.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 15V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+41.80 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDB33N25TM FDB33N25TM onsemi FDB33N25-D.PDF Description: MOSFET N-CH 250V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
на замовлення 12800 шт:
термін постачання 21-31 дні (днів)
800+76.41 грн
1600+68.64 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FDB5800 FDB5800 onsemi FDB5800-D.pdf Description: MOSFET N-CH 60V 14A/80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6625 pF @ 15 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+101.66 грн
1600+95.76 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FDB8444 FDB8444 onsemi fdb8444-d.pdf Description: MOSFET N-CH 40V 70A TO263AB
Input Capacitance (Ciss) (Max) @ Vds: 8035 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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FDB8860 FDB8860 onsemi fdb8860-d.pdf Description: MOSFET N-CH 30V 80A TO263AB
товару немає в наявності
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FDC658AP FDC658AP onsemi FDC658AP-D.PDF Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+15.45 грн
6000+13.67 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDD6635 FDD6635 onsemi fdd6635-d.pdf Description: MOSFET N-CH 35V 15A/59A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
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FDD6637 FDD6637 onsemi FDD6637-D.pdf Description: MOSFET P-CH 35V 13A/55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+46.32 грн
5000+41.66 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FDD8444 FDD8444 onsemi fdd8444-d.pdf Description: MOSFET N-CH 40V 145A TO252AA
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 153W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+39.84 грн
5000+38.11 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FDD8444-F085 FDD8444-F085 onsemi fdd8444_f085-d.pdf Description: MOSFET N-CH 40V 145A TO252AA
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 153W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
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FDD8445 FDD8445 onsemi FDD8445-D.pdf Description: MOSFET N-CH 40V 70A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
 Мінімальне замовлення: 1300 шт
В кошику  од. на суму  грн.
FDMA420NZ FDMA420NZ onsemi FDMA420NZ-D.PDF Description: MOSFET N-CH 20V 5.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+16.47 грн
6000+14.62 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDMA430NZ FDMA430NZ onsemi fdma430nz-d.pdf Description: MOSFET N-CH 30V 5A 6MICROFET
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
3000+16.95 грн
6000+15.04 грн
9000+14.39 грн
15000+12.82 грн
21000+12.53 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDMB3800N FDMB3800N onsemi FDMB3800N-D.PDF Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+26.99 грн
6000+24.16 грн
9000+23.28 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDMS9600S FDMS9600S onsemi fdms9600s-d.pdf Description: MOSFET 2N-CH 30V 12A 8MLP PWR56
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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FDP100N10 FDP100N10 onsemi fdp100n10-d.pdf Description: MOSFET N-CH 100V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
2+310.04 грн
50+153.78 грн
100+139.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FDP20N50 FDP20N50 onsemi FDPF20N50T-D.pdf Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
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FDP20N50F FDP20N50F onsemi FDPF20N50FT-D.pdf Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 2988 шт:
термін постачання 21-31 дні (днів)
2+290.21 грн
10+184.17 грн
50+143.32 грн
100+122.16 грн
500+100.56 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FDP51N25 FDP51N25 onsemi fdpf51n25rdtu-d.pdf Description: MOSFET N-CH 250V 51A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 573 шт:
термін постачання 21-31 дні (днів)
2+215.68 грн
50+100.24 грн
100+95.05 грн
500+84.20 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FDP55N06 FDP55N06 onsemi fdpf55n06-d.pdf Description: MOSFET N-CH 60V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 27.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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FDPF20N50FT FDPF20N50FT onsemi FDPF20N50FT-D.pdf Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 860 шт:
термін постачання 21-31 дні (днів)
1+348.89 грн
10+223.80 грн
50+175.57 грн
100+150.19 грн
500+124.68 грн
В кошику  од. на суму  грн.
FDPF44N25T FDPF44N25T onsemi fdpf44n25trdtu-d.pdf Description: MOSFET N-CH 250V 44A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
на замовлення 1184 шт:
термін постачання 21-31 дні (днів)
2+235.50 грн
10+148.13 грн
50+114.26 грн
100+96.97 грн
500+79.00 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FDS4897C FDS4897C onsemi fds4897c-d.pdf Description: MOSFET N/P-CH 40V 6.2A 8SOIC
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
Drain to Source Voltage (Vdss): 40V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FDS5682 FDS5682 onsemi FDS5682.pdf Description: MOSFET N-CH 60V 7.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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N02L63W3AB25I n02l63w3a-d.pdf
N02L63W3AB25I
Виробник: onsemi
Description: IC SRAM 2MBIT PARALLEL 48BGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-BGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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N02L83W2AT25I n02l83w2a-d.pdf
N02L83W2AT25I
Виробник: onsemi
Description: IC SRAM 2MBIT PARALLEL 32TSOP I
Packaging: Tray
Package / Case: 32-LFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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N04L63W1AT27I n04l63w1a-d.pdf
N04L63W1AT27I
Виробник: onsemi
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
Write Cycle Time - Word, Page: 70ns
Part Status: Obsolete
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 70 ns
Memory Interface: Parallel
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N04L63W2AT27I n04l63w2a-d.pdf
N04L63W2AT27I
Виробник: onsemi
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 70 ns
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N08L63W2AB27I N08L63W2A.pdf
N08L63W2AB27I
Виробник: onsemi
Description: IC SRAM 4MBIT PARALLEL 48BGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 48-BGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Packaging: Tray
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N25S818HAS21I n25s818ha-d.pdf
N25S818HAS21I
Виробник: onsemi
Description: IC SRAM 256KBIT SPI 16MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: SRAM
Clock Frequency: 16 MHz
Technology: SRAM
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 19686 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+179.99 грн
10+158.13 грн
25+153.87 грн
50+143.67 грн
100+128.42 грн
250+128.05 грн
500+124.05 грн
1000+118.78 грн
5000+110.59 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
N25S818HAT21I n25s818ha-d.pdf
N25S818HAT21I
Виробник: onsemi
Description: IC SRAM 256KBIT SPI 16MHZ 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-TSSOP
Memory Format: SRAM
Clock Frequency: 16 MHz
Technology: SRAM
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
на замовлення 8108 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+159.38 грн
10+136.14 грн
25+129.87 грн
50+117.60 грн
100+113.46 грн
250+108.21 грн
500+102.68 грн
1000+99.05 грн
5000+91.09 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
N25S830HAS22I n25s830ha-d.pdf
N25S830HAS22I
Виробник: onsemi
Description: IC SRAM 256KBIT SPI 20MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: SRAM
Clock Frequency: 20 MHz
Technology: SRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 6447 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+162.55 грн
10+140.80 грн
25+138.63 грн
50+129.79 грн
100+115.96 грн
300+112.15 грн
500+109.91 грн
1000+102.35 грн
5000+92.64 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
N25S830HAT22I n25s830ha-d.pdf
N25S830HAT22I
Виробник: onsemi
Description: IC SRAM 256KBIT SPI 20MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Clock Frequency: 20 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Part Status: Active
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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N64S830HAS22I n64s830ha-d.pdf
N64S830HAS22I
Виробник: onsemi
Description: IC SRAM 64KBIT SPI 20MHZ 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Clock Frequency: 20 MHz
Memory Format: SRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 10159 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+119.73 грн
10+107.66 грн
25+104.61 грн
50+95.96 грн
100+93.76 грн
300+90.26 грн
500+87.19 грн
1000+85.05 грн
5000+80.18 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
N64S830HAT22I n64s830ha-d.pdf
N64S830HAT22I
Виробник: onsemi
Description: IC SRAM 64KBIT SPI 20MHZ 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Part Status: Last Time Buy
Supplier Device Package: 8-TSSOP
Memory Format: SRAM
Clock Frequency: 20 MHz
Technology: SRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+114.18 грн
10+100.94 грн
25+98.16 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
AMIS30600LINI1RG amis-30600-d.pdf
AMIS30600LINI1RG
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Duplex: Half
Receiver Hysteresis: 80 mV
Supplier Device Package: 8-SOIC
Protocol: LINbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AMIS30624C6244RG amis-30624-d.pdf
AMIS30624C6244RG
Виробник: onsemi
Description: IC MTRDRV BIPLR 4.75-5.5V 20SOIC
Supplier Device Package: 20-SOIC
Voltage - Load: 6.5V ~ 29V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 165°C (TJ)
Interface: I²C
Current - Output: 570mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Step Resolution: 1/2, 1/4, 1/8, 1/16
Motor Type - Stepper: Bipolar
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AMIS30624C6245RG amis-30624-d.pdf
AMIS30624C6245RG
Виробник: onsemi
Description: IC MTR DRV BIPLR 4.75-5.5V 32QFP
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 165°C (TJ)
Interface: I²C
Current - Output: 570mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 32-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Step Resolution: 1/2, 1/4, 1/8, 1/16
Motor Type - Stepper: Bipolar
Supplier Device Package: 32-NQFP (7x7)
Voltage - Load: 6.5V ~ 29V
Technology: Power MOSFET
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AMIS30660CANH2RG amis-30660-d.pdf
AMIS30660CANH2RG
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Duplex: Half
Receiver Hysteresis: 80 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AMIS41682CANM1RG amis-41682-d.pdf
AMIS41682CANM1RG
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 14-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AMIS42665TJAA1RG amis-42665-d.pdf
AMIS42665TJAA1RG
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Data Rate: 1Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AMIS42673ICAG1RG AMIS-42673.pdf
AMIS42673ICAG1RG
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AMIS42675ICAA1RG
AMIS42675ICAA1RG
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AMIS42770ICAW1RG AMIS-42770-D.PDF
AMIS42770ICAW1RG
Виробник: onsemi
Description: IC TRANSCEIVER HALF 2/2 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 2/2
Protocol: CANbus
Supplier Device Package: 20-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Obsolete
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AMIS30600LINI1RG amis-30600-d.pdf
AMIS30600LINI1RG
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Duplex: Half
Receiver Hysteresis: 80 mV
Supplier Device Package: 8-SOIC
Protocol: LINbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AMIS30660CANH2RG amis-30660-d.pdf
AMIS30660CANH2RG
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Duplex: Half
Receiver Hysteresis: 80 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AMIS41682CANM1RG amis-41682-d.pdf
AMIS41682CANM1RG
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 14-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AMIS42665TJAA1RG amis-42665-d.pdf
AMIS42665TJAA1RG
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Data Rate: 1Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AMIS42673ICAG1RG AMIS-42673.pdf
AMIS42673ICAG1RG
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AMIS42675ICAA1RG
AMIS42675ICAA1RG
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 70 mV
Supplier Device Package: 8-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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FD6M016N03 FD6M016N03.pdf
FD6M016N03
Виробник: onsemi
Description: MOSFET 2N-CH 30V 80A EPM15
Supplier Device Package: EPM15
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 80A
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Through Hole
Package / Case: EPM15
Packaging: Tube
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FDMC8651 fdmc8651-d.pdf
FDMC8651
Виробник: onsemi
Description: MOSFET N-CH 30V 15A/20A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+39.67 грн
6000+36.40 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FGA180N33ATTU FGA180N33AT.pdf
FGA180N33ATTU
Виробник: onsemi
Description: IGBT TRENCH 330V 180A TO-3P
Power - Max: 390 W
Current - Collector Pulsed (Icm): 450 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector (Ic) (Max): 180 A
Part Status: Obsolete
Gate Charge: 169 nC
IGBT Type: Trench
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FGA25N120FTD FGA25N120FTD.pdf
FGA25N120FTD
Виробник: onsemi
Description: IGBT TRENCH FS 1200V 50A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 770 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/210ns
Switching Energy: 340µJ (on), 900µJ (off)
Test Condition: 600V, 25A, 15Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
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FGA90N33ATDTU FGA90N33ATD.pdf
FGA90N33ATDTU
Виробник: onsemi
Description: IGBT TRENCH 330V 90A TO3P
Power - Max: 223 W
Current - Collector Pulsed (Icm): 330 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector (Ic) (Max): 90 A
Part Status: Obsolete
Gate Charge: 95 nC
IGBT Type: Trench
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Reverse Recovery Time (trr): 23 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
FGA90N33ATTU FGA90N33AT.pdf
FGA90N33ATTU
Виробник: onsemi
Description: IGBT TRENCH 330V 90A TO-3P
Power - Max: 223 W
Current - Collector Pulsed (Icm): 330 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector (Ic) (Max): 90 A
Gate Charge: 95 nC
IGBT Type: Trench
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
FDMC8651 fdmc8651-d.pdf
FDMC8651
Виробник: onsemi
Description: MOSFET N-CH 30V 15A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 15 V
на замовлення 6340 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+151.45 грн
10+93.46 грн
100+63.24 грн
500+47.21 грн
1000+43.31 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
4N33SM H11B1M-D.pdf
4N33SM
Виробник: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+66.61 грн
50+35.84 грн
100+32.89 грн
500+25.90 грн
1000+24.27 грн
2000+22.89 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
4N33SR2M H11B1M-D.pdf
4N33SR2M
Виробник: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+25.07 грн
2000+22.77 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FAN5350UCX fan5350-d.pdf
FAN5350UCX
Виробник: onsemi
Description: IC REG BUCK 1.82V 600MA 5WLCSP
Voltage - Output (Min/Fixed): 1.82V
Voltage - Input (Min): 2.7V
Synchronous Rectifier: Yes
Supplier Device Package: 5-WLCSP (0.96x1.33)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 600mA
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
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FAN73832MX FAN73832-D.pdf
FAN73832MX
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 15V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+41.80 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDB33N25TM FDB33N25-D.PDF
FDB33N25TM
Виробник: onsemi
Description: MOSFET N-CH 250V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
на замовлення 12800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+76.41 грн
1600+68.64 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FDB5800 FDB5800-D.pdf
FDB5800
Виробник: onsemi
Description: MOSFET N-CH 60V 14A/80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6625 pF @ 15 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+101.66 грн
1600+95.76 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FDB8444 fdb8444-d.pdf
FDB8444
Виробник: onsemi
Description: MOSFET N-CH 40V 70A TO263AB
Input Capacitance (Ciss) (Max) @ Vds: 8035 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
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FDB8860 fdb8860-d.pdf
FDB8860
Виробник: onsemi
Description: MOSFET N-CH 30V 80A TO263AB
товару немає в наявності
В кошику  од. на суму  грн.
FDC658AP FDC658AP-D.PDF
FDC658AP
Виробник: onsemi
Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+15.45 грн
6000+13.67 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDD6635 fdd6635-d.pdf
FDD6635
Виробник: onsemi
Description: MOSFET N-CH 35V 15A/59A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
FDD6637 FDD6637-D.pdf
FDD6637
Виробник: onsemi
Description: MOSFET P-CH 35V 13A/55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+46.32 грн
5000+41.66 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FDD8444 fdd8444-d.pdf
FDD8444
Виробник: onsemi
Description: MOSFET N-CH 40V 145A TO252AA
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 153W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+39.84 грн
5000+38.11 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FDD8444-F085 fdd8444_f085-d.pdf
FDD8444-F085
Виробник: onsemi
Description: MOSFET N-CH 40V 145A TO252AA
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 153W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
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FDD8445 FDD8445-D.pdf
FDD8445
Виробник: onsemi
Description: MOSFET N-CH 40V 70A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
Мінімальне замовлення: 1300 шт
В кошику  од. на суму  грн.
FDMA420NZ FDMA420NZ-D.PDF
FDMA420NZ
Виробник: onsemi
Description: MOSFET N-CH 20V 5.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+16.47 грн
6000+14.62 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDMA430NZ fdma430nz-d.pdf
FDMA430NZ
Виробник: onsemi
Description: MOSFET N-CH 30V 5A 6MICROFET
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+16.95 грн
6000+15.04 грн
9000+14.39 грн
15000+12.82 грн
21000+12.53 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDMB3800N FDMB3800N-D.PDF
FDMB3800N
Виробник: onsemi
Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+26.99 грн
6000+24.16 грн
9000+23.28 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDMS9600S fdms9600s-d.pdf
FDMS9600S
Виробник: onsemi
Description: MOSFET 2N-CH 30V 12A 8MLP PWR56
Supplier Device Package: 8-MLP (5x6), Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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FDP100N10 fdp100n10-d.pdf
FDP100N10
Виробник: onsemi
Description: MOSFET N-CH 100V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+310.04 грн
50+153.78 грн
100+139.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FDP20N50 FDPF20N50T-D.pdf
FDP20N50
Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
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FDP20N50F FDPF20N50FT-D.pdf
FDP20N50F
Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 2988 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+290.21 грн
10+184.17 грн
50+143.32 грн
100+122.16 грн
500+100.56 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FDP51N25 fdpf51n25rdtu-d.pdf
FDP51N25
Виробник: onsemi
Description: MOSFET N-CH 250V 51A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 573 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+215.68 грн
50+100.24 грн
100+95.05 грн
500+84.20 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FDP55N06 fdpf55n06-d.pdf
FDP55N06
Виробник: onsemi
Description: MOSFET N-CH 60V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 27.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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FDPF20N50FT FDPF20N50FT-D.pdf
FDPF20N50FT
Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 860 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+348.89 грн
10+223.80 грн
50+175.57 грн
100+150.19 грн
500+124.68 грн
В кошику  од. на суму  грн.
FDPF44N25T fdpf44n25trdtu-d.pdf
FDPF44N25T
Виробник: onsemi
Description: MOSFET N-CH 250V 44A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
на замовлення 1184 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+235.50 грн
10+148.13 грн
50+114.26 грн
100+96.97 грн
500+79.00 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FDS4897C fds4897c-d.pdf
FDS4897C
Виробник: onsemi
Description: MOSFET N/P-CH 40V 6.2A 8SOIC
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
Drain to Source Voltage (Vdss): 40V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FDS5682 FDS5682.pdf
FDS5682
Виробник: onsemi
Description: MOSFET N-CH 60V 7.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
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