| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTMS4177PR2G | onsemi |
Description: MOSFET P-CH 30V 6.6A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 24 V |
на замовлення 1998 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1998 шт В кошику од. на суму грн. | ||||||||||||
|
NUD4700SNT1G | onsemi |
Description: LIGHT PROTECT LED SHUNT 5.5V SMDPackaging: Tape & Reel (TR) Package / Case: DO-216AA Voltage: 5.5V Mounting Type: Surface Mount Applications: LED Protection Technology: LED Shunt Supplier Device Package: Powermite Part Status: Active Number of Circuits: 1 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SC224DR2G | onsemi |
Description: IC OPAMP 14SOIC Supplier Device Package: 14-SOIC Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC239DR2G | onsemi | Description: IC COMPARATOR QUAD 14-SOIC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
SC239DTBR2G | onsemi | Description: IC COMPARATOR QUAD 14-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SC258DR2G | onsemi |
Description: IC OPAMP 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SC258NG | onsemi |
Description: IC OPAMP GP 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: Standard (General Purpose) Supplier Device Package: 8-PDIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
SC2901DR2G | onsemi |
Description: IC OPAMP 14SOIC Supplier Device Package: 14-SOIC Voltage - Input Offset: 2 mV Current - Input Bias: 25 nA Current - Supply: 800µA Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC2901DTBR2G | onsemi |
Description: IC OPAMP GP 14TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 14-TSSOP Amplifier Type: General Purpose Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC2901NG | onsemi |
Description: IC COMPARATOR 4 GEN PUR 14DIPCurrent - Output (Typ): 16mA @ 5V Current - Input Bias (Max): 0.25µA @ 5V Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 2mA Supplier Device Package: 14-PDIP Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V Operating Temperature: -40°C ~ 105°C Type: General Purpose Number of Elements: 4 Mounting Type: Through Hole Output Type: CMOS, Open-Collector, TTL Package / Case: 14-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC2901VDR2G | onsemi |
Description: IC OPAMP 14SOIC Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 14-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC2901VDTBR2G | onsemi |
Description: IC OPAMP GP 14TSSOP Part Status: Active Supplier Device Package: 14-TSSOP Amplifier Type: General Purpose Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC2901VNG | onsemi |
Description: IC COMPARATOR 4 GEN PUR 14DIPPart Status: Obsolete Current - Output (Typ): 16mA @ 5V Current - Input Bias (Max): 0.25µA @ 5V Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 2mA Supplier Device Package: 14-PDIP Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V Operating Temperature: -40°C ~ 125°C Type: General Purpose Number of Elements: 4 Mounting Type: Through Hole Output Type: CMOS, Open-Collector, TTL Package / Case: 14-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC2902VDTBR2G | onsemi |
Description: IC OPAMP GP 14TSSOP Supplier Device Package: 14-TSSOP Amplifier Type: General Purpose Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC2903DG | onsemi |
Description: IC OPAMP GP 8SOIC Supplier Device Package: 8-SOIC Amplifier Type: Standard (General Purpose) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC2903DR2G | onsemi |
Description: IC OPAMP GP 8SOIC Supplier Device Package: 8-SOIC Amplifier Type: Standard (General Purpose) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC2903NG | onsemi |
Description: IC OPAMP GP 14DIP Supplier Device Package: 14-PDIP Amplifier Type: General Purpose Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC2904DR2G | onsemi |
Description: IC OP AMP 2CH 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Input Bias: 45 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOIC Part Status: Obsolete Number of Circuits: 2 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 26 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC2904NG | onsemi |
Description: IC OPAMP GP 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: General Purpose Supplier Device Package: 8-PDIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC2904VDR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Input Bias: 45 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOIC Part Status: Obsolete Number of Circuits: 2 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 26 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC2904VNG | onsemi |
Description: IC OPAMP GP 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: General Purpose Supplier Device Package: 8-PDIP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC324DR2G | onsemi |
Description: IC OPAMP GP 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Supplier Device Package: 14-SOIC Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC324NG | onsemi |
Description: IC OPAMP GP 14DIP Part Status: Obsolete Supplier Device Package: 14-PDIP Amplifier Type: General Purpose Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SC3302DR2G | onsemi |
Description: IC COMPARATOR QUAD DIFF 14-SOIC Part Status: Obsolete Supplier Device Package: 14-SOIC Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
SC339DR2G | onsemi |
Description: IC COMPARATOR 14SOIC Part Status: Obsolete Supplier Device Package: 14-SOIC Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SC339NG | onsemi |
Description: IC COMPATATOR QUAD LO PWR 14-DIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Supplier Device Package: 14-PDIP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
SC358DR2G | onsemi |
Description: IC OP AMP 2CH 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: 0°C ~ 70°C Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOIC Part Status: Obsolete Number of Circuits: 2 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
SC358NG | onsemi |
Description: IC OP AMP 2CH 8-PDIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: Standard (General Purpose) Operating Temperature: 0°C ~ 70°C Voltage - Input Offset: 2 mV Supplier Device Package: 8-PDIP Part Status: Obsolete Number of Circuits: 2 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
SC393DR2G | onsemi |
Description: IC COMPARATOR DUAL 8SOIC Supplier Device Package: 8-SOIC Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
CAT24C256WI-G | onsemi |
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 500 ns Memory Organization: 32K x 8 DigiKey Programmable: Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
FDB3502 | onsemi |
Description: MOSFET N-CH 75V 6A/14A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
FDD5353 | onsemi |
Description: MOSFET N-CH 60V 11.5A/50A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V Power Dissipation (Max): 3.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
FDMC4435BZ | onsemi |
Description: MOSFET P-CH 30V 8.5A/18A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V Power Dissipation (Max): 2.3W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FDMS3662 | onsemi |
Description: MOSFET N-CH 100V 8.9A/49A 8PQFNRds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 104W (Tc) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FDMS5352 | onsemi |
Description: MOSFET N-CH 60V 13.6A/49A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FDP047N08 | onsemi |
Description: MOSFET N-CH 75V 164A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 164A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V Power Dissipation (Max): 268W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V |
на замовлення 3381 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FFA40UP35STU | onsemi |
Description: DIODE GEN PURP 350V 40A TO3PNCurrent - Reverse Leakage @ Vr: 100 µA @ 350 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A Voltage - DC Reverse (Vr) (Max): 350 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-3PN Current - Average Rectified (Io): 40A Technology: Standard Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
FGH40N60SFDTU | onsemi |
Description: IGBT FIELD STOP 600V 80A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 45 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 25ns/115ns Switching Energy: 1.13mJ (on), 310µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 290 W |
на замовлення 556 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FGH40N60UFDTU | onsemi |
Description: IGBT FIELD STOP 600V 80A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 45 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 24ns/112ns Switching Energy: 1.19mJ (on), 460µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 290 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
FQH8N100C | onsemi |
Description: MOSFET N-CH 1000V 8A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 225W (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 306 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FDB3502 | onsemi |
Description: MOSFET N-CH 75V 6A/14A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V |
на замовлення 371 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FDD5353 | onsemi |
Description: MOSFET N-CH 60V 11.5A/50A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V Power Dissipation (Max): 3.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FDMC4435BZ | onsemi |
Description: MOSFET P-CH 30V 8.5A/18A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V Power Dissipation (Max): 2.3W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V |
на замовлення 18221 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FDMC8462 | onsemi |
Description: MOSFET N-CH 40V 14A/20A POWER33Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 13.5A, 10V Power Dissipation (Max): 2W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 20 V |
на замовлення 12468 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FDMS3662 | onsemi |
Description: MOSFET N-CH 100V 8.9A/49A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 9556 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FDMS5352 | onsemi |
Description: MOSFET N-CH 60V 13.6A/49A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 3811 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
CAT885ZI-SA-GT3 | onsemi |
Description: IC SUPERVSR 5CH 2.87/1.68V 8MSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
CAT24C256WI-GT3 | onsemi |
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 500 ns Memory Organization: 32K x 8 DigiKey Programmable: Verified |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
CAT24C256YI-GT3 | onsemi |
Description: IC EEPROM 256KBIT I2C 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 500 ns Memory Organization: 32K x 8 DigiKey Programmable: Verified |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
CAT24C128YI-GT3 | onsemi |
Description: IC EEPROM 128KBIT I2C 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 16K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
|
FSBF10CH60BTL | onsemi |
Description: MODULE SPM 600V 10A 3PH SPM27-JB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
FSQ0765RQWDTU | onsemi |
Description: IC OFFLINE SW FLBACK TO220F-6LPower (Watts): 90 W Part Status: Obsolete Control Features: Sync Voltage - Start Up: 12 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: TO-220F-6L (L-Forming) Voltage - Supply (Vcc/Vdd): 8V ~ 20V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 48kHz ~ 67kHz Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: TO-220-6 Full Pack, Formed Leads Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||
|
2SA1943OTU | onsemi |
Description: TRANS PNP 250V 17A TO-264-3Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -50°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-264-3 Part Status: Active Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 150 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
2SA1962OTU | onsemi |
Description: TRANS PNP 250V 17A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3P Part Status: Obsolete Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 130 W |
на замовлення 81 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
2SC5242RTU | onsemi |
Description: TRANS NPN 250V 17A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3P Part Status: Obsolete Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 130 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
2SC5242OTU | onsemi |
Description: TRANS NPN 250V 17A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3P Part Status: Active Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 130 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
2SA1381CSTU | onsemi |
Description: TRANS PNP 300V 0.1A TO-126-3Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Frequency - Transition: 150MHz Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 7 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
2SA1381DSTU | onsemi |
Description: TRANS PNP 300V 0.1A TO-126-3Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V Frequency - Transition: 150MHz Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 7 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
2SA1381ESTU | onsemi |
Description: TRANS PNP 300V 0.1A TO-126-3Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 150MHz Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 7 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
2SA1381FSTU | onsemi |
Description: TRANS PNP 300V 0.1A TO-126-3Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 10V Frequency - Transition: 150MHz Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 7 W |
товару немає в наявності |
В кошику од. на суму грн. |
| NTMS4177PR2G |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 30V 6.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 24 V
Description: MOSFET P-CH 30V 6.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 24 V
на замовлення 1998 шт:
термін постачання 21-31 дні (днів)
| NUD4700SNT1G |
![]() |
Виробник: onsemi
Description: LIGHT PROTECT LED SHUNT 5.5V SMD
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Voltage: 5.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: Powermite
Part Status: Active
Number of Circuits: 1
Description: LIGHT PROTECT LED SHUNT 5.5V SMD
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Voltage: 5.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: Powermite
Part Status: Active
Number of Circuits: 1
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.48 грн |
| 6000+ | 15.45 грн |
| SC224DR2G |
Виробник: onsemi
Description: IC OPAMP 14SOIC
Supplier Device Package: 14-SOIC
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OPAMP 14SOIC
Supplier Device Package: 14-SOIC
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SC239DR2G |
Виробник: onsemi
Description: IC COMPARATOR QUAD 14-SOIC
Description: IC COMPARATOR QUAD 14-SOIC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SC239DTBR2G |
Виробник: onsemi
Description: IC COMPARATOR QUAD 14-TSSOP
Description: IC COMPARATOR QUAD 14-TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| SC258DR2G |
Виробник: onsemi
Description: IC OPAMP 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Description: IC OPAMP 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| SC258NG |
Виробник: onsemi
Description: IC OPAMP GP 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: Standard (General Purpose)
Supplier Device Package: 8-PDIP
Description: IC OPAMP GP 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: Standard (General Purpose)
Supplier Device Package: 8-PDIP
товару немає в наявності
В кошику
од. на суму грн.
| SC2901DR2G |
Виробник: onsemi
Description: IC OPAMP 14SOIC
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 2 mV
Current - Input Bias: 25 nA
Current - Supply: 800µA
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OPAMP 14SOIC
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 2 mV
Current - Input Bias: 25 nA
Current - Supply: 800µA
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SC2901DTBR2G |
Виробник: onsemi
Description: IC OPAMP GP 14TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 14-TSSOP
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Description: IC OPAMP GP 14TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 14-TSSOP
Amplifier Type: General Purpose
Mounting Type: Surface Mount
товару немає в наявності
В кошику
од. на суму грн.
| SC2901NG |
![]() |
Виробник: onsemi
Description: IC COMPARATOR 4 GEN PUR 14DIP
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-PDIP
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Operating Temperature: -40°C ~ 105°C
Type: General Purpose
Number of Elements: 4
Mounting Type: Through Hole
Output Type: CMOS, Open-Collector, TTL
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC COMPARATOR 4 GEN PUR 14DIP
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-PDIP
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Operating Temperature: -40°C ~ 105°C
Type: General Purpose
Number of Elements: 4
Mounting Type: Through Hole
Output Type: CMOS, Open-Collector, TTL
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SC2901VDR2G |
Виробник: onsemi
Description: IC OPAMP 14SOIC
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Description: IC OPAMP 14SOIC
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 14-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| SC2901VDTBR2G |
Виробник: onsemi
Description: IC OPAMP GP 14TSSOP
Part Status: Active
Supplier Device Package: 14-TSSOP
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC OPAMP GP 14TSSOP
Part Status: Active
Supplier Device Package: 14-TSSOP
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SC2901VNG |
![]() |
Виробник: onsemi
Description: IC COMPARATOR 4 GEN PUR 14DIP
Part Status: Obsolete
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-PDIP
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Operating Temperature: -40°C ~ 125°C
Type: General Purpose
Number of Elements: 4
Mounting Type: Through Hole
Output Type: CMOS, Open-Collector, TTL
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC COMPARATOR 4 GEN PUR 14DIP
Part Status: Obsolete
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-PDIP
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Operating Temperature: -40°C ~ 125°C
Type: General Purpose
Number of Elements: 4
Mounting Type: Through Hole
Output Type: CMOS, Open-Collector, TTL
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SC2902VDTBR2G |
Виробник: onsemi
Description: IC OPAMP GP 14TSSOP
Supplier Device Package: 14-TSSOP
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC OPAMP GP 14TSSOP
Supplier Device Package: 14-TSSOP
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SC2903DG |
Виробник: onsemi
Description: IC OPAMP GP 8SOIC
Supplier Device Package: 8-SOIC
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC OPAMP GP 8SOIC
Supplier Device Package: 8-SOIC
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SC2903DR2G |
Виробник: onsemi
Description: IC OPAMP GP 8SOIC
Supplier Device Package: 8-SOIC
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OPAMP GP 8SOIC
Supplier Device Package: 8-SOIC
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SC2903NG |
Виробник: onsemi
Description: IC OPAMP GP 14DIP
Supplier Device Package: 14-PDIP
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC OPAMP GP 14DIP
Supplier Device Package: 14-PDIP
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SC2904DR2G |
Виробник: onsemi
Description: IC OP AMP 2CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 26 V
Description: IC OP AMP 2CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 26 V
товару немає в наявності
В кошику
од. на суму грн.
| SC2904NG |
Виробник: onsemi
Description: IC OPAMP GP 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Supplier Device Package: 8-PDIP
Description: IC OPAMP GP 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Supplier Device Package: 8-PDIP
товару немає в наявності
В кошику
од. на суму грн.
| SC2904VDR2G |
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 26 V
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 26 V
товару немає в наявності
В кошику
од. на суму грн.
| SC2904VNG |
Виробник: onsemi
Description: IC OPAMP GP 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Description: IC OPAMP GP 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Supplier Device Package: 8-PDIP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| SC324DR2G |
Виробник: onsemi
Description: IC OPAMP GP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Description: IC OPAMP GP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Supplier Device Package: 14-SOIC
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| SC324NG |
Виробник: onsemi
Description: IC OPAMP GP 14DIP
Part Status: Obsolete
Supplier Device Package: 14-PDIP
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC OPAMP GP 14DIP
Part Status: Obsolete
Supplier Device Package: 14-PDIP
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SC3302DR2G |
Виробник: onsemi
Description: IC COMPARATOR QUAD DIFF 14-SOIC
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC COMPARATOR QUAD DIFF 14-SOIC
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| SC339DR2G |
Виробник: onsemi
Description: IC COMPARATOR 14SOIC
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC COMPARATOR 14SOIC
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SC339NG |
Виробник: onsemi
Description: IC COMPATATOR QUAD LO PWR 14-DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Supplier Device Package: 14-PDIP
Part Status: Obsolete
Description: IC COMPATATOR QUAD LO PWR 14-DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Supplier Device Package: 14-PDIP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| SC358DR2G |
Виробник: onsemi
Description: IC OP AMP 2CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OP AMP 2CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SC358NG |
Виробник: onsemi
Description: IC OP AMP 2CH 8-PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OP AMP 2CH 8-PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
товару немає в наявності
В кошику
од. на суму грн.
| SC393DR2G |
Виробник: onsemi
Description: IC COMPARATOR DUAL 8SOIC
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: IC COMPARATOR DUAL 8SOIC
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| CAT24C256WI-G |
![]() |
Виробник: onsemi
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
товару немає в наявності
В кошику
од. на суму грн.
| FDB3502 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 75V 6A/14A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V
Description: MOSFET N-CH 75V 6A/14A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| FDD5353 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 11.5A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V
Description: MOSFET N-CH 60V 11.5A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FDMC4435BZ |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 31.22 грн |
| 6000+ | 27.98 грн |
| FDMS3662 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 87.49 грн |
| FDMS5352 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 13.6A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 13.6A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 94.40 грн |
| FDP047N08 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 75V 164A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
Description: MOSFET N-CH 75V 164A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
на замовлення 3381 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 290.80 грн |
| 50+ | 143.68 грн |
| 100+ | 130.49 грн |
| 500+ | 100.77 грн |
| 1000+ | 93.81 грн |
| 2000+ | 91.82 грн |
| FFA40UP35STU |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 350V 40A TO3PN
Current - Reverse Leakage @ Vr: 100 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 350 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3PN
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: DIODE GEN PURP 350V 40A TO3PN
Current - Reverse Leakage @ Vr: 100 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 350 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3PN
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FGH40N60SFDTU |
![]() |
Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
на замовлення 556 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 339.39 грн |
| 30+ | 182.91 грн |
| 120+ | 151.20 грн |
| 510+ | 120.07 грн |
| FGH40N60UFDTU |
![]() |
Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
товару немає в наявності
В кошику
од. на суму грн.
| FQH8N100C |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 1000V 8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 1000V 8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 306 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 421.69 грн |
| 30+ | 231.32 грн |
| 60+ | 210.45 грн |
| 120+ | 181.02 грн |
| FDB3502 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 75V 6A/14A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V
Description: MOSFET N-CH 75V 6A/14A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V
на замовлення 371 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.90 грн |
| 10+ | 98.88 грн |
| 100+ | 67.55 грн |
| FDD5353 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 11.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V
Description: MOSFET N-CH 60V 11.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 160.68 грн |
| 10+ | 99.48 грн |
| 50+ | 75.43 грн |
| 100+ | 63.50 грн |
| 500+ | 50.69 грн |
| FDMC4435BZ |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
на замовлення 18221 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.79 грн |
| 10+ | 71.25 грн |
| 50+ | 53.39 грн |
| 100+ | 44.69 грн |
| 500+ | 35.17 грн |
| FDMC8462 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 14A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 13.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 20 V
Description: MOSFET N-CH 40V 14A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 13.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 20 V
на замовлення 12468 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.90 грн |
| 10+ | 80.16 грн |
| 100+ | 53.88 грн |
| 500+ | 40.00 грн |
| 1000+ | 36.61 грн |
| FDMS3662 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 9556 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 261.01 грн |
| 10+ | 165.22 грн |
| 100+ | 115.86 грн |
| 500+ | 96.78 грн |
| FDMS5352 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 13.6A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 13.6A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 3811 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 206.14 грн |
| 10+ | 149.15 грн |
| 100+ | 113.63 грн |
| 500+ | 92.97 грн |
| 1000+ | 86.35 грн |
| CAT885ZI-SA-GT3 |
![]() |
Виробник: onsemi
Description: IC SUPERVSR 5CH 2.87/1.68V 8MSOP
Description: IC SUPERVSR 5CH 2.87/1.68V 8MSOP
товару немає в наявності
В кошику
од. на суму грн.
| CAT24C256WI-GT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 38.40 грн |
| 6000+ | 36.06 грн |
| CAT24C256YI-GT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 26.61 грн |
| 6000+ | 24.99 грн |
| CAT24C128YI-GT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 128KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 128KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FSBF10CH60BTL |
![]() |
Виробник: onsemi
Description: MODULE SPM 600V 10A 3PH SPM27-JB
Description: MODULE SPM 600V 10A 3PH SPM27-JB
товару немає в наявності
В кошику
од. на суму грн.
| FSQ0765RQWDTU |
![]() |
Виробник: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 90 W
Part Status: Obsolete
Control Features: Sync
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: TO-220F-6L (L-Forming)
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 48kHz ~ 67kHz
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 90 W
Part Status: Obsolete
Control Features: Sync
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: TO-220F-6L (L-Forming)
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 48kHz ~ 67kHz
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| 2SA1943OTU |
![]() |
Виробник: onsemi
Description: TRANS PNP 250V 17A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264-3
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
Description: TRANS PNP 250V 17A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264-3
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1962OTU |
![]() |
Виробник: onsemi
Description: TRANS PNP 250V 17A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
Description: TRANS PNP 250V 17A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
на замовлення 81 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 384.85 грн |
| 30+ | 207.94 грн |
| 2SC5242RTU |
![]() |
Виробник: onsemi
Description: TRANS NPN 250V 17A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
Description: TRANS NPN 250V 17A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5242OTU |
![]() |
Виробник: onsemi
Description: TRANS NPN 250V 17A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
Description: TRANS NPN 250V 17A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1381CSTU |
![]() |
Виробник: onsemi
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1381DSTU |
![]() |
Виробник: onsemi
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1381ESTU |
![]() |
Виробник: onsemi
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1381FSTU |
![]() |
Виробник: onsemi
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
товару немає в наявності
В кошику
од. на суму грн.






























