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MA3D749A MA3D749A Panasonic Electronic Components MA3D749%28A%29_Rev_Nov_2011.pdf Description: DIODE ARR SCHOT 45V 5A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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MA3D750 MA3D750 Panasonic Electronic Components MA3D750%28A%29_Rev_Nov_2011.pdf Description: DIODE ARR SCHOT 40V 10A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
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MA3D750A MA3D750A Panasonic Electronic Components MA3D750%28A%29_Rev_Nov_2011.pdf Description: DIODE ARR SCHOT 45V 10A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
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MA3D752 MA3D752 Panasonic Electronic Components MA3D752%28A%29_Rev_Nov_2011.pdf Description: DIODE ARR SCHOT 40V 20A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
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MA3D752A MA3D752A Panasonic Electronic Components MA3D752%28A%29_Rev_Nov_2011.pdf Description: DIODE ARR SCHOT 45V 20A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
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MA3D756 MA3D756 Panasonic Electronic Components MA3D756_Rev_Nov_2011.pdf Description: DIODE ARR SCHOT 60V 10A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
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MA3D761 MA3D761 Panasonic Electronic Components MA3D761_Rev_Nov_2011.pdf Description: DIODE ARR SCHOT 90V 10A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 90 V
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MA3D799 MA3D799 Panasonic Electronic Components MA3D799_Rev_Nov_2011.pdf Description: DIODE ARR SCHOT 30V 10A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
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MA3G655 MA3G655 Panasonic Electronic Components jvcr13pz.cgi?E+SC+4+BFA7001+MA3G655+8+WW Description: DIODE ARRAY GP 300V 20A TO3F-A1
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MA3S781F0L MA3S781F0L Panasonic Electronic Components jvcr13pz.cgi?E+SC+4+BFA7001+MA3S781F+8+WW Description: DIODE ARRAY SCHOTTKY 30V SSMINI3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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MA3SD29F0L MA3SD29F0L Panasonic Electronic Components MA3SD29F_Rev_Nov_2011.pdf Description: DIODE ARRAY SCHOTTKY 30V SSMINI3
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MA3SE0100L MA3SE0100L Panasonic Electronic Components jvcr13pz.cgi?E+SC+4+BFA7001+MA3SE01+8+WW Description: DIODE ARRAY SCHOTTKY 20V SSMINI3
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MA3U74900L MA3U74900L Panasonic Electronic Components MA3U749_Rev_Nov_2011.pdf Description: DIODE ARRAY SCHOTTKY 40V 5A U-G2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: U-G2
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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MA3X028TAL MA3X028TAL Panasonic Electronic Components MA3X028_Series_Rev_Nov_2011.pdf Description: DIODE GEN PURP 6V 70MA MINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 70mA
Supplier Device Package: Mini3-G1
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 6 V
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 3 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6 V
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MA3X028WAL MA3X028WAL Panasonic Electronic Components MA3X028_Series_Rev_Nov_2011.pdf Description: DIODE GEN PURP 6V 100MA MINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: Mini3-G1
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 6 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6 V
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MA3X10000L MA3X10000L Panasonic Electronic Components MA3X100_Rev_Nov_2011.pdf Description: DIODE GEN PURP 200V 100MA SMINI3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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MA3X78900L MA3X78900L Panasonic Electronic Components jvcr13pz.cgi?E+SC+4+BFA7001+MA3X789+8+WW Description: DIODE SCHOTTKY 60V 500MA MINI3
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MA4S11100L MA4S11100L Panasonic Electronic Components jvcr13pz.cgi?E+SC+4+BFA7001+MA4S111+8+WW Description: DIODE ARRAY SCHOTTKY 80V SSMINI4
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MA4X16000L MA4X16000L Panasonic Electronic Components MA4X160_Rev_Nov_2011.pdf Description: DIODE ARRAY GP 40V 100MA MINI4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: Mini4-G1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 35 V
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MA4X160A0L MA4X160A0L Panasonic Electronic Components jvcr13pz.cgi?E+SC+4+BFA7001+MA4X160A+8+WW Description: DIODE ARRAY GP 80V 100MA MINI4
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MA4X19400L MA4X19400L Panasonic Electronic Components MA4X194_Rev_Nov_2011.pdf Description: DIODE ARRAY GP 40V 100MA MINI4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: Mini4-G1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 40 V
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MA5J002E0L MA5J002E0L Panasonic Electronic Components jvcr13pz.cgi?E+SC+4+BFA7001+MA5J002E+8+WW Description: DIODE ARRAY GP 80V 100MA SMINI5
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MA6X12200L MA6X12200L Panasonic Electronic Components MA6X122_Rev_Nov_2011.pdf Description: DIODE ARRAY GP 80V 100MA MINI6
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MA6X12300L MA6X12300L Panasonic Electronic Components MA6X123_Rev_Nov_2011.pdf Description: DIODE ARRAY GP 80V 100MA MINI6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: Mini6-G2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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MA6X12600L MA6X12600L Panasonic Electronic Components MA6X126_Rev_Nov_2011.pdf Description: DIODE ARRAY GP 80V 100MA MINI6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: MINI6-G1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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MA6X12900L MA6X12900L Panasonic Electronic Components MA6X129_Rev_Nov_2011.pdf Description: DIODE ARRAY GP 200V 200MA MINI6
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MA6Z12100L MA6Z12100L Panasonic Electronic Components MA6Z121_Rev_Nov_2011.pdf Description: DIODE ARRAY GP 80V 100MA SMINI6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SMini6-F1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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MALM062H0L MALM062H0L Panasonic Electronic Components MALM062H_Rev_Nov_2011.pdf Description: TVS DIODE 4VWM SSMINI5-F1
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: SSMini5-F1
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
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MALS06200L MALS06200L Panasonic Electronic Components MALS062_Rev_Nov_2011.pdf Description: TVS DIODE 4VWM SSMINI2-F1
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: SSMini2-F1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
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MALS06800L MALS06800L Panasonic Electronic Components MALS068_Rev_Nov_2011.pdf Description: TVS DIODE 4VWM SSMINI2-F1
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 50pF @ 1MHz
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: SSMini2-F1
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
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MALT062H0L MALT062H0L Panasonic Electronic Components MALT062H_Rev_Nov_2011.pdf Description: TVS DIODE 4VWM SSMINI3-F2
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: SSMini3-F2
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Obsolete
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MTM231100L MTM231100L Panasonic Electronic Components MTM23110.pdf Description: MOSFET P-CH 12V 4A SMINI-3
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MTM231230L MTM231230L Panasonic Electronic Components MTM23123.pdf Description: MOSFET P-CH 20V 3A SMINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SMini3-G1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
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MTM232230L MTM232230L Panasonic Electronic Components MTM23223.pdf Description: MOSFET N-CH 20V 4.5A SMINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SMini3-G1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
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NP0450100A NP0450100A Panasonic Electronic Components Description: TRANS 2NPN 50V 0.1A SSSMINI
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NP062AN00A NP062AN00A Panasonic Electronic Components jvcr13pz.cgi?E+SC+4+BFA7001+NP062AN+8+WW Description: TRANS 2NPN PREBIAS SSSMINI6
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
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NP063D300A NP063D300A Panasonic Electronic Components NP063D3_Rev_Nov_2011.pdf Description: TRANS PREBIAS NPN/PNP SSSMINI6
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NP0A54700A NP0A54700A Panasonic Electronic Components NP0A547_Schem.jpg Description: TRANS 2NPN 7V 0.01A SSSMINI6
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 50mW
Current - Collector (Ic) (Max): 10mA
Voltage - Collector Emitter Breakdown (Max): 7V
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 1V / 80 @ 1mA, 1V
Frequency - Transition: 4GHz
Supplier Device Package: SSSMini6-F1
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NP0G3A000A NP0G3A000A Panasonic Electronic Components jvcr13pz.cgi?E+SC+4+BFA7001+NP0G3A0+8+WW Description: TRANS PREBIAS NPN/PNP SSSMINI6
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
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NP0G3D300A NP0G3D300A Panasonic Electronic Components jvcr13pz.cgi?E+SC+4+BFA7001+NP0G3D3+8+WW Description: TRANS PREBIAS NPN/PNP SSSMINI6
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
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UNR32A700L UNR32A700L Panasonic Electronic Components jvcr13pz.cgi?E+SC+4+BFA7001+UNR32A7+8+WW Description: TRANS PREBIAS NPN 100MW SSSMINI3
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
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UNR411100A UNR411100A Panasonic Electronic Components UNR411x_Series_Rev_Nov_2011.pdf Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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UNR411400A UNR411400A Panasonic Electronic Components UNR411x_Series_Rev_Nov_2011.pdf Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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UNR41160RA UNR41160RA Panasonic Electronic Components UNR411x_Series_Rev_Nov_2011.pdf Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 4.7 kOhms
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UNR411800A UNR411800A Panasonic Electronic Components UNR411x_Series_Rev_Nov_2011.pdf Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 510 Ohms
Resistor - Emitter Base (R2): 5.1 kOhms
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UNR411900A UNR411900A Panasonic Electronic Components UNR411x_Series_Rev_Nov_2011.pdf Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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UNR411E00A UNR411E00A Panasonic Electronic Components UNR411x_Series_Rev_Nov_2011.pdf Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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UNR411H00A UNR411H00A Panasonic Electronic Components UNR411x_Series_Rev_Nov_2011.pdf Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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UNR412100A UNR412100A Panasonic Electronic Components UNR412x_Series_Rev_Nov_2011.pdf Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Supplier Device Package: NS-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
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UNR412200A UNR412200A Panasonic Electronic Components UNR412x_Series_Rev_Nov_2011.pdf Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
Supplier Device Package: NS-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
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UNR412300A UNR412300A Panasonic Electronic Components UNR412x_Series_Rev_Nov_2011.pdf Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
Supplier Device Package: NS-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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UNR42100RA UNR42100RA Panasonic Electronic Components UNR421x Series_discon.pdf Description: TRANS PREBIAS NPN 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: NS-B1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
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UNR421100A UNR421100A Panasonic Electronic Components UNR421x%20Series_discon.pdf Description: TRANS PREBIAS NPN 300MW NS-B1
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UNR421200A UNR421200A Panasonic Electronic Components UNR421x%20Series_discon.pdf Description: TRANS PREBIAS NPN 300MW NS-B1
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
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UNR421400A UNR421400A Panasonic Electronic Components UNR421x Series_discon.pdf Description: TRANS PREBIAS NPN 50V NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: NS-B1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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UNR42160RA UNR42160RA Panasonic Electronic Components UNR421x%20Series_discon.pdf Description: TRANS PREBIAS NPN 300MW NS-B1
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UNR42170RA UNR42170RA Panasonic Electronic Components UNR421x%20Series_discon.pdf Description: TRANS PREBIAS NPN 300MW NS-B1
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UNR421900A UNR421900A Panasonic Electronic Components UNR421x%20Series_discon.pdf Description: TRANS PREBIAS NPN 300MW NS-B1
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UNR421D00A UNR421D00A Panasonic Electronic Components UNR421x%20Series_discon.pdf Description: TRANS PREBIAS NPN 300MW NS-B1
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UNR421F00A UNR421F00A Panasonic Electronic Components UNR421x%20Series_discon.pdf Description: TRANS PREBIAS NPN 300MW NS-B1
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MA3D749A MA3D749%28A%29_Rev_Nov_2011.pdf
MA3D749A
Виробник: Panasonic Electronic Components
Description: DIODE ARR SCHOT 45V 5A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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MA3D750 MA3D750%28A%29_Rev_Nov_2011.pdf
MA3D750
Виробник: Panasonic Electronic Components
Description: DIODE ARR SCHOT 40V 10A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
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MA3D750A MA3D750%28A%29_Rev_Nov_2011.pdf
MA3D750A
Виробник: Panasonic Electronic Components
Description: DIODE ARR SCHOT 45V 10A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
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MA3D752 MA3D752%28A%29_Rev_Nov_2011.pdf
MA3D752
Виробник: Panasonic Electronic Components
Description: DIODE ARR SCHOT 40V 20A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
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MA3D752A MA3D752%28A%29_Rev_Nov_2011.pdf
MA3D752A
Виробник: Panasonic Electronic Components
Description: DIODE ARR SCHOT 45V 20A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
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MA3D756 MA3D756_Rev_Nov_2011.pdf
MA3D756
Виробник: Panasonic Electronic Components
Description: DIODE ARR SCHOT 60V 10A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
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MA3D761 MA3D761_Rev_Nov_2011.pdf
MA3D761
Виробник: Panasonic Electronic Components
Description: DIODE ARR SCHOT 90V 10A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 90 V
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MA3D799 MA3D799_Rev_Nov_2011.pdf
MA3D799
Виробник: Panasonic Electronic Components
Description: DIODE ARR SCHOT 30V 10A TO220DA1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220D-A1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
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MA3G655 jvcr13pz.cgi?E+SC+4+BFA7001+MA3G655+8+WW
MA3G655
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY GP 300V 20A TO3F-A1
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MA3S781F0L jvcr13pz.cgi?E+SC+4+BFA7001+MA3S781F+8+WW
MA3S781F0L
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY SCHOTTKY 30V SSMINI3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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MA3SD29F0L MA3SD29F_Rev_Nov_2011.pdf
MA3SD29F0L
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY SCHOTTKY 30V SSMINI3
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MA3SE0100L jvcr13pz.cgi?E+SC+4+BFA7001+MA3SE01+8+WW
MA3SE0100L
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY SCHOTTKY 20V SSMINI3
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MA3U74900L MA3U749_Rev_Nov_2011.pdf
MA3U74900L
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY SCHOTTKY 40V 5A U-G2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: U-G2
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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MA3X028TAL MA3X028_Series_Rev_Nov_2011.pdf
MA3X028TAL
Виробник: Panasonic Electronic Components
Description: DIODE GEN PURP 6V 70MA MINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 70mA
Supplier Device Package: Mini3-G1
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 6 V
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 3 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6 V
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MA3X028WAL MA3X028_Series_Rev_Nov_2011.pdf
MA3X028WAL
Виробник: Panasonic Electronic Components
Description: DIODE GEN PURP 6V 100MA MINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: Mini3-G1
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 6 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6 V
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MA3X10000L MA3X100_Rev_Nov_2011.pdf
MA3X10000L
Виробник: Panasonic Electronic Components
Description: DIODE GEN PURP 200V 100MA SMINI3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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MA3X78900L jvcr13pz.cgi?E+SC+4+BFA7001+MA3X789+8+WW
MA3X78900L
Виробник: Panasonic Electronic Components
Description: DIODE SCHOTTKY 60V 500MA MINI3
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MA4S11100L jvcr13pz.cgi?E+SC+4+BFA7001+MA4S111+8+WW
MA4S11100L
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY SCHOTTKY 80V SSMINI4
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MA4X16000L MA4X160_Rev_Nov_2011.pdf
MA4X16000L
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY GP 40V 100MA MINI4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: Mini4-G1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 35 V
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MA4X160A0L jvcr13pz.cgi?E+SC+4+BFA7001+MA4X160A+8+WW
MA4X160A0L
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY GP 80V 100MA MINI4
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MA4X19400L MA4X194_Rev_Nov_2011.pdf
MA4X19400L
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY GP 40V 100MA MINI4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: Mini4-G1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 40 V
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MA5J002E0L jvcr13pz.cgi?E+SC+4+BFA7001+MA5J002E+8+WW
MA5J002E0L
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY GP 80V 100MA SMINI5
товару немає в наявності
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MA6X12200L MA6X122_Rev_Nov_2011.pdf
MA6X12200L
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY GP 80V 100MA MINI6
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MA6X12300L MA6X123_Rev_Nov_2011.pdf
MA6X12300L
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY GP 80V 100MA MINI6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: Mini6-G2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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MA6X12600L MA6X126_Rev_Nov_2011.pdf
MA6X12600L
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY GP 80V 100MA MINI6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: MINI6-G1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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MA6X12900L MA6X129_Rev_Nov_2011.pdf
MA6X12900L
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY GP 200V 200MA MINI6
товару немає в наявності
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MA6Z12100L MA6Z121_Rev_Nov_2011.pdf
MA6Z12100L
Виробник: Panasonic Electronic Components
Description: DIODE ARRAY GP 80V 100MA SMINI6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SMini6-F1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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MALM062H0L MALM062H_Rev_Nov_2011.pdf
MALM062H0L
Виробник: Panasonic Electronic Components
Description: TVS DIODE 4VWM SSMINI5-F1
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: SSMini5-F1
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
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MALS06200L MALS062_Rev_Nov_2011.pdf
MALS06200L
Виробник: Panasonic Electronic Components
Description: TVS DIODE 4VWM SSMINI2-F1
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: SSMini2-F1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
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MALS06800L MALS068_Rev_Nov_2011.pdf
MALS06800L
Виробник: Panasonic Electronic Components
Description: TVS DIODE 4VWM SSMINI2-F1
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 50pF @ 1MHz
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: SSMini2-F1
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
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MALT062H0L MALT062H_Rev_Nov_2011.pdf
MALT062H0L
Виробник: Panasonic Electronic Components
Description: TVS DIODE 4VWM SSMINI3-F2
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: SSMini3-F2
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Obsolete
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MTM231100L MTM23110.pdf
MTM231100L
Виробник: Panasonic Electronic Components
Description: MOSFET P-CH 12V 4A SMINI-3
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MTM231230L MTM23123.pdf
MTM231230L
Виробник: Panasonic Electronic Components
Description: MOSFET P-CH 20V 3A SMINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SMini3-G1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
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MTM232230L MTM23223.pdf
MTM232230L
Виробник: Panasonic Electronic Components
Description: MOSFET N-CH 20V 4.5A SMINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SMini3-G1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
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NP0450100A
NP0450100A
Виробник: Panasonic Electronic Components
Description: TRANS 2NPN 50V 0.1A SSSMINI
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NP062AN00A jvcr13pz.cgi?E+SC+4+BFA7001+NP062AN+8+WW
NP062AN00A
Виробник: Panasonic Electronic Components
Description: TRANS 2NPN PREBIAS SSSMINI6
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
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NP063D300A NP063D3_Rev_Nov_2011.pdf
NP063D300A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN/PNP SSSMINI6
товару немає в наявності
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NP0A54700A NP0A547_Schem.jpg
NP0A54700A
Виробник: Panasonic Electronic Components
Description: TRANS 2NPN 7V 0.01A SSSMINI6
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 50mW
Current - Collector (Ic) (Max): 10mA
Voltage - Collector Emitter Breakdown (Max): 7V
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 1V / 80 @ 1mA, 1V
Frequency - Transition: 4GHz
Supplier Device Package: SSSMini6-F1
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NP0G3A000A jvcr13pz.cgi?E+SC+4+BFA7001+NP0G3A0+8+WW
NP0G3A000A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN/PNP SSSMINI6
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
NP0G3D300A jvcr13pz.cgi?E+SC+4+BFA7001+NP0G3D3+8+WW
NP0G3D300A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN/PNP SSSMINI6
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
UNR32A700L jvcr13pz.cgi?E+SC+4+BFA7001+UNR32A7+8+WW
UNR32A700L
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 100MW SSSMINI3
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
UNR411100A UNR411x_Series_Rev_Nov_2011.pdf
UNR411100A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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UNR411400A UNR411x_Series_Rev_Nov_2011.pdf
UNR411400A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товару немає в наявності
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UNR41160RA UNR411x_Series_Rev_Nov_2011.pdf
UNR41160RA
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 4.7 kOhms
товару немає в наявності
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UNR411800A UNR411x_Series_Rev_Nov_2011.pdf
UNR411800A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 510 Ohms
Resistor - Emitter Base (R2): 5.1 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
UNR411900A UNR411x_Series_Rev_Nov_2011.pdf
UNR411900A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
UNR411E00A UNR411x_Series_Rev_Nov_2011.pdf
UNR411E00A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
UNR411H00A UNR411x_Series_Rev_Nov_2011.pdf
UNR411H00A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
UNR412100A UNR412x_Series_Rev_Nov_2011.pdf
UNR412100A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Supplier Device Package: NS-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
UNR412200A UNR412x_Series_Rev_Nov_2011.pdf
UNR412200A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
Supplier Device Package: NS-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
UNR412300A UNR412x_Series_Rev_Nov_2011.pdf
UNR412300A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
Supplier Device Package: NS-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
UNR42100RA UNR421x Series_discon.pdf
UNR42100RA
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: NS-B1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
UNR421100A UNR421x%20Series_discon.pdf
UNR421100A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1
товару немає в наявності
В кошику  од. на суму  грн.
UNR421200A UNR421x%20Series_discon.pdf
UNR421200A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
UNR421400A UNR421x Series_discon.pdf
UNR421400A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 50V NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: NS-B1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
UNR42160RA UNR421x%20Series_discon.pdf
UNR42160RA
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1
товару немає в наявності
В кошику  од. на суму  грн.
UNR42170RA UNR421x%20Series_discon.pdf
UNR42170RA
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1
товару немає в наявності
В кошику  од. на суму  грн.
UNR421900A UNR421x%20Series_discon.pdf
UNR421900A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1
товару немає в наявності
В кошику  од. на суму  грн.
UNR421D00A UNR421x%20Series_discon.pdf
UNR421D00A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1
товару немає в наявності
В кошику  од. на суму  грн.
UNR421F00A UNR421x%20Series_discon.pdf
UNR421F00A
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1
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