Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1490) > Сторінка 15 з 25
Фото | Назва | Виробник | Інформація |
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PJA138K-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 4.5Ω Pulsed drain current: 1.2A Type of transistor: N-MOSFET Drain current: 0.5A Drain-source voltage: 50V Power dissipation: 0.5W кількість в упаковці: 5 шт |
на замовлення 2840 шт: термін постачання 7-14 дні (днів) |
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PJA138K-AU_R2_000A1 | PanJit Semiconductor | PJA138K-AU-R2 SMD N channel transistors |
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PJA138K_R1_00001 | PanJit Semiconductor |
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PJA3400_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 5.7nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 60mΩ Pulsed drain current: 19.6A Type of transistor: N-MOSFET Drain current: 4.9A Drain-source voltage: 30V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2940 шт: термін постачання 7-14 дні (днів) |
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PJA3400_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 5.7nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 60mΩ Pulsed drain current: 19.6A Type of transistor: N-MOSFET Drain current: 4.9A Drain-source voltage: 30V Power dissipation: 1.25W |
на замовлення 2940 шт: термін постачання 21-30 дні (днів) |
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PJA3401A_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 86mΩ Pulsed drain current: -14.4A Type of transistor: P-MOSFET Drain current: -3.6A Drain-source voltage: -30V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2860 шт: термін постачання 7-14 дні (днів) |
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PJA3401A_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 86mΩ Pulsed drain current: -14.4A Type of transistor: P-MOSFET Drain current: -3.6A Drain-source voltage: -30V Power dissipation: 1.25W |
на замовлення 2860 шт: термін постачання 21-30 дні (днів) |
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PJA3402_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 11.3nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 92mΩ Pulsed drain current: 17.6A Type of transistor: N-MOSFET Drain current: 4.4A Drain-source voltage: 30V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 4419 шт: термін постачання 7-14 дні (днів) |
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PJA3402_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 11.3nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 92mΩ Pulsed drain current: 17.6A Type of transistor: N-MOSFET Drain current: 4.4A Drain-source voltage: 30V Power dissipation: 1.25W |
на замовлення 4419 шт: термін постачання 21-30 дні (днів) |
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PJA3403_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 0.165Ω Pulsed drain current: -12.4A Type of transistor: P-MOSFET Drain current: -3.1A Drain-source voltage: -30V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2400 шт: термін постачання 7-14 дні (днів) |
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PJA3403_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 0.165Ω Pulsed drain current: -12.4A Type of transistor: P-MOSFET Drain current: -3.1A Drain-source voltage: -30V Power dissipation: 1.25W |
на замовлення 2400 шт: термін постачання 21-30 дні (днів) |
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PJA3404_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 7.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 45mΩ Pulsed drain current: 22A Type of transistor: N-MOSFET Drain current: 5.6A Drain-source voltage: 30V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 5085 шт: термін постачання 7-14 дні (днів) |
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PJA3404_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 7.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 45mΩ Pulsed drain current: 22A Type of transistor: N-MOSFET Drain current: 5.6A Drain-source voltage: 30V Power dissipation: 1.25W |
на замовлення 5085 шт: термін постачання 21-30 дні (днів) |
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PJA3405-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 97mΩ Pulsed drain current: -14.4A Type of transistor: P-MOSFET Drain current: -3.6A Drain-source voltage: -30V Power dissipation: 1.25W |
на замовлення 2885 шт: термін постачання 21-30 дні (днів) |
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PJA3405-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 97mΩ Pulsed drain current: -14.4A Type of transistor: P-MOSFET Drain current: -3.6A Drain-source voltage: -30V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2885 шт: термін постачання 7-14 дні (днів) |
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PJA3406_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 5.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 70mΩ Pulsed drain current: 17.6A Type of transistor: N-MOSFET Drain current: 4.4A Drain-source voltage: 30V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2500 шт: термін постачання 7-14 дні (днів) |
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PJA3406_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 5.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 70mΩ Pulsed drain current: 17.6A Type of transistor: N-MOSFET Drain current: 4.4A Drain-source voltage: 30V Power dissipation: 1.25W |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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PJA3407_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 80mΩ Pulsed drain current: -15.2A Type of transistor: P-MOSFET Drain current: -3.8A Drain-source voltage: -30V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2989 шт: термін постачання 7-14 дні (днів) |
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PJA3407_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 80mΩ Pulsed drain current: -15.2A Type of transistor: P-MOSFET Drain current: -3.8A Drain-source voltage: -30V Power dissipation: 1.25W |
на замовлення 2989 шт: термін постачання 21-30 дні (днів) |
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PJA3409_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 9.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 0.15Ω Pulsed drain current: -11.6A Type of transistor: P-MOSFET Drain current: -2.9A Drain-source voltage: -30V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2490 шт: термін постачання 7-14 дні (днів) |
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PJA3409_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 9.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 0.15Ω Pulsed drain current: -11.6A Type of transistor: P-MOSFET Drain current: -2.9A Drain-source voltage: -30V Power dissipation: 1.25W |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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PJA3411-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 5.4nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 0.19Ω Pulsed drain current: -12.4A Type of transistor: P-MOSFET Drain current: -3.1A Drain-source voltage: -20V Power dissipation: 1.25W |
на замовлення 2785 шт: термін постачання 21-30 дні (днів) |
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PJA3411-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 5.4nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 0.19Ω Pulsed drain current: -12.4A Type of transistor: P-MOSFET Drain current: -3.1A Drain-source voltage: -20V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2785 шт: термін постачання 7-14 дні (днів) |
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PJA3411_R1_00001 | PanJit Semiconductor |
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PJA3412-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 4.6nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 95mΩ Pulsed drain current: 16.4A Type of transistor: N-MOSFET Drain current: 4.1A Drain-source voltage: 20V Power dissipation: 1.25W |
на замовлення 2555 шт: термін постачання 21-30 дні (днів) |
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PJA3412-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 4.6nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 95mΩ Pulsed drain current: 16.4A Type of transistor: N-MOSFET Drain current: 4.1A Drain-source voltage: 20V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2555 шт: термін постачання 7-14 дні (днів) |
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PJA3412_R1_00001 | PanJit Semiconductor |
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PJA3413_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 146mΩ Pulsed drain current: -13.6A Type of transistor: P-MOSFET Drain current: -3.4A Drain-source voltage: -20V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2940 шт: термін постачання 7-14 дні (днів) |
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PJA3413_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 146mΩ Pulsed drain current: -13.6A Type of transistor: P-MOSFET Drain current: -3.4A Drain-source voltage: -20V Power dissipation: 1.25W |
на замовлення 2940 шт: термін постачання 21-30 дні (днів) |
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PJA3415A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 88mΩ Pulsed drain current: -18A Type of transistor: P-MOSFET Drain current: -4.5A Drain-source voltage: -20V Power dissipation: 1.25W |
на замовлення 2870 шт: термін постачання 21-30 дні (днів) |
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PJA3415A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 88mΩ Pulsed drain current: -18A Type of transistor: P-MOSFET Drain current: -4.5A Drain-source voltage: -20V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2870 шт: термін постачання 7-14 дні (днів) |
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PJA3415AE_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Case: SOT23 Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PJA3415AE_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Case: SOT23 Mounting: SMD Kind of package: tape Kind of channel: enhanced |
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PJA3416AE_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 8.6nC Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 34mΩ Pulsed drain current: 32A Type of transistor: N-MOSFET Drain current: 6.5A Drain-source voltage: 20V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2925 шт: термін постачання 7-14 дні (днів) |
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PJA3416AE_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 8.6nC Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 34mΩ Pulsed drain current: 32A Type of transistor: N-MOSFET Drain current: 6.5A Drain-source voltage: 20V Power dissipation: 1.25W |
на замовлення 2925 шт: термін постачання 21-30 дні (днів) |
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PJA3419AE_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; SOT23 Mounting: SMD Kind of package: tape Polarisation: unipolar Case: SOT23 Kind of channel: enhanced Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
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PJA3419AE_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; SOT23 Mounting: SMD Kind of package: tape Polarisation: unipolar Case: SOT23 Kind of channel: enhanced Type of transistor: P-MOSFET |
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PJA3419_R1_00001 | PanJit Semiconductor |
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PJA3428_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±10V On-state resistance: 4Ω Pulsed drain current: 0.6A Type of transistor: N-MOSFET Drain current: 0.3A Drain-source voltage: 30V Power dissipation: 0.5W кількість в упаковці: 5 шт |
на замовлення 4890 шт: термін постачання 7-14 дні (днів) |
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PJA3428_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±10V On-state resistance: 4Ω Pulsed drain current: 0.6A Type of transistor: N-MOSFET Drain current: 0.3A Drain-source voltage: 30V Power dissipation: 0.5W |
на замовлення 4890 шт: термін постачання 21-30 дні (днів) |
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PJA3430_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 0.4Ω Pulsed drain current: 8A Type of transistor: N-MOSFET Drain current: 2A Drain-source voltage: 20V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2590 шт: термін постачання 7-14 дні (днів) |
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PJA3430_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 0.4Ω Pulsed drain current: 8A Type of transistor: N-MOSFET Drain current: 2A Drain-source voltage: 20V Power dissipation: 1.25W |
на замовлення 2590 шт: термін постачання 21-30 дні (днів) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 570mΩ Pulsed drain current: 6.4A Type of transistor: N-MOSFET Drain current: 1.6A Drain-source voltage: 30V Power dissipation: 1.25W |
на замовлення 2575 шт: термін постачання 21-30 дні (днів) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 570mΩ Pulsed drain current: 6.4A Type of transistor: N-MOSFET Drain current: 1.6A Drain-source voltage: 30V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2575 шт: термін постачання 7-14 дні (днів) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 0.97Ω Pulsed drain current: -4.4A Type of transistor: P-MOSFET Drain current: -1.1A Drain-source voltage: -30V Power dissipation: 1.25W |
на замовлення 2485 шт: термін постачання 21-30 дні (днів) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 0.97Ω Pulsed drain current: -4.4A Type of transistor: P-MOSFET Drain current: -1.1A Drain-source voltage: -30V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2485 шт: термін постачання 7-14 дні (днів) |
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PJA3433_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 0.97Ω Pulsed drain current: -4.4A Type of transistor: P-MOSFET Drain current: -1.1A Drain-source voltage: -30V Power dissipation: 1.25W кількість в упаковці: 1 шт |
на замовлення 5865 шт: термін постачання 7-14 дні (днів) |
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PJA3433_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 0.97Ω Pulsed drain current: -4.4A Type of transistor: P-MOSFET Drain current: -1.1A Drain-source voltage: -30V Power dissipation: 1.25W |
на замовлення 5865 шт: термін постачання 21-30 дні (днів) |
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PJA3434_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V On-state resistance: 3Ω Pulsed drain current: 1.5A Type of transistor: N-MOSFET Drain current: 0.75A Drain-source voltage: 20V Power dissipation: 0.5W кількість в упаковці: 5 шт |
на замовлення 2670 шт: термін постачання 7-14 дні (днів) |
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PJA3434_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V On-state resistance: 3Ω Pulsed drain current: 1.5A Type of transistor: N-MOSFET Drain current: 0.75A Drain-source voltage: 20V Power dissipation: 0.5W |
на замовлення 2670 шт: термін постачання 21-30 дні (днів) |
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PJA3435_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V On-state resistance: 6Ω Pulsed drain current: -1A Type of transistor: P-MOSFET Drain current: -0.5A Drain-source voltage: -20V Power dissipation: 0.5W кількість в упаковці: 5 шт |
на замовлення 2980 шт: термін постачання 7-14 дні (днів) |
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PJA3435_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V On-state resistance: 6Ω Pulsed drain current: -1A Type of transistor: P-MOSFET Drain current: -0.5A Drain-source voltage: -20V Power dissipation: 0.5W |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 0.9Ω Pulsed drain current: 4.8A Type of transistor: N-MOSFET Drain current: 1.2A Drain-source voltage: 20V Power dissipation: 1.25W |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 0.9Ω Pulsed drain current: 4.8A Type of transistor: N-MOSFET Drain current: 1.2A Drain-source voltage: 20V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 0.95nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 6Ω Pulsed drain current: 1.2A Type of transistor: N-MOSFET Drain current: 0.5A Drain-source voltage: 50V Power dissipation: 0.5W |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 0.95nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 6Ω Pulsed drain current: 1.2A Type of transistor: N-MOSFET Drain current: 0.5A Drain-source voltage: 50V Power dissipation: 0.5W кількість в упаковці: 5 шт |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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PJA3439-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1.1nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 13Ω Pulsed drain current: -1A Type of transistor: P-MOSFET Drain current: -300mA Drain-source voltage: -60V Power dissipation: 0.5W |
на замовлення 1910 шт: термін постачання 21-30 дні (днів) |
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PJA3439-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1.1nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 13Ω Pulsed drain current: -1A Type of transistor: P-MOSFET Drain current: -300mA Drain-source voltage: -60V Power dissipation: 0.5W кількість в упаковці: 5 шт |
на замовлення 1910 шт: термін постачання 7-14 дні (днів) |
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PJA3440-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 4.3A; Idm: 17.2A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 4.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 51mΩ Pulsed drain current: 17.2A Type of transistor: N-MOSFET Drain current: 4.3A Drain-source voltage: 40V Power dissipation: 1.25W |
на замовлення 2710 шт: термін постачання 21-30 дні (днів) |
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PJA3440-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 4.3A; Idm: 17.2A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 4.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 51mΩ Pulsed drain current: 17.2A Type of transistor: N-MOSFET Drain current: 4.3A Drain-source voltage: 40V Power dissipation: 1.25W кількість в упаковці: 5 шт |
на замовлення 2710 шт: термін постачання 7-14 дні (днів) |
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PJA138K-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.5A
Drain-source voltage: 50V
Power dissipation: 0.5W
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.5A
Drain-source voltage: 50V
Power dissipation: 0.5W
кількість в упаковці: 5 шт
на замовлення 2840 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
90+ | 3.22 грн |
105+ | 2.55 грн |
490+ | 2.03 грн |
1345+ | 1.92 грн |
9000+ | 1.85 грн |
PJA138K-AU_R2_000A1 |
Виробник: PanJit Semiconductor
PJA138K-AU-R2 SMD N channel transistors
PJA138K-AU-R2 SMD N channel transistors
товар відсутній
PJA3400_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Pulsed drain current: 19.6A
Type of transistor: N-MOSFET
Drain current: 4.9A
Drain-source voltage: 30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Pulsed drain current: 19.6A
Type of transistor: N-MOSFET
Drain current: 4.9A
Drain-source voltage: 30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2940 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.68 грн |
35+ | 7.62 грн |
100+ | 6.57 грн |
185+ | 5.46 грн |
500+ | 5.21 грн |
9000+ | 5.03 грн |
PJA3400_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Pulsed drain current: 19.6A
Type of transistor: N-MOSFET
Drain current: 4.9A
Drain-source voltage: 30V
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Pulsed drain current: 19.6A
Type of transistor: N-MOSFET
Drain current: 4.9A
Drain-source voltage: 30V
Power dissipation: 1.25W
на замовлення 2940 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.57 грн |
60+ | 6.12 грн |
100+ | 5.48 грн |
185+ | 4.55 грн |
500+ | 4.34 грн |
PJA3401A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2860 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.68 грн |
40+ | 6.81 грн |
100+ | 5.9 грн |
205+ | 4.88 грн |
565+ | 4.62 грн |
9000+ | 4.44 грн |
PJA3401A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
на замовлення 2860 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.57 грн |
70+ | 5.46 грн |
100+ | 4.91 грн |
205+ | 4.07 грн |
565+ | 3.85 грн |
PJA3402_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 4419 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.53 грн |
55+ | 5.26 грн |
250+ | 4.57 грн |
270+ | 3.73 грн |
735+ | 3.52 грн |
9000+ | 3.38 грн |
PJA3402_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
на замовлення 4419 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.44 грн |
85+ | 4.22 грн |
250+ | 3.8 грн |
270+ | 3.11 грн |
735+ | 2.94 грн |
PJA3403_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2400 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.43 грн |
55+ | 4.87 грн |
250+ | 4.16 грн |
255+ | 3.9 грн |
705+ | 3.69 грн |
3000+ | 3.55 грн |
PJA3403_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.36 грн |
95+ | 3.91 грн |
250+ | 3.47 грн |
255+ | 3.25 грн |
705+ | 3.07 грн |
PJA3404_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 22A
Type of transistor: N-MOSFET
Drain current: 5.6A
Drain-source voltage: 30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 22A
Type of transistor: N-MOSFET
Drain current: 5.6A
Drain-source voltage: 30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 5085 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.34 грн |
50+ | 5.55 грн |
225+ | 4.44 грн |
620+ | 4.19 грн |
3000+ | 4.03 грн |
PJA3404_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 22A
Type of transistor: N-MOSFET
Drain current: 5.6A
Drain-source voltage: 30V
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 22A
Type of transistor: N-MOSFET
Drain current: 5.6A
Drain-source voltage: 30V
Power dissipation: 1.25W
на замовлення 5085 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.28 грн |
80+ | 4.45 грн |
225+ | 3.7 грн |
620+ | 3.49 грн |
3000+ | 3.36 грн |
PJA3405-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
на замовлення 2885 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.57 грн |
65+ | 5.69 грн |
100+ | 5.13 грн |
195+ | 4.25 грн |
540+ | 4.03 грн |
PJA3405-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2885 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.68 грн |
40+ | 7.09 грн |
100+ | 6.16 грн |
195+ | 5.1 грн |
540+ | 4.83 грн |
9000+ | 4.65 грн |
PJA3406_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2500 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.87 грн |
40+ | 6.84 грн |
100+ | 5.91 грн |
205+ | 4.9 грн |
560+ | 4.63 грн |
9000+ | 4.45 грн |
PJA3406_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.72 грн |
65+ | 5.49 грн |
100+ | 4.93 грн |
205+ | 4.08 грн |
560+ | 3.86 грн |
PJA3407_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Pulsed drain current: -15.2A
Type of transistor: P-MOSFET
Drain current: -3.8A
Drain-source voltage: -30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Pulsed drain current: -15.2A
Type of transistor: P-MOSFET
Drain current: -3.8A
Drain-source voltage: -30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2989 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.68 грн |
40+ | 7.36 грн |
100+ | 6.4 грн |
190+ | 5.29 грн |
520+ | 5.03 грн |
9000+ | 4.78 грн |
PJA3407_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Pulsed drain current: -15.2A
Type of transistor: P-MOSFET
Drain current: -3.8A
Drain-source voltage: -30V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Pulsed drain current: -15.2A
Type of transistor: P-MOSFET
Drain current: -3.8A
Drain-source voltage: -30V
Power dissipation: 1.25W
на замовлення 2989 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.57 грн |
65+ | 5.9 грн |
100+ | 5.33 грн |
190+ | 4.41 грн |
520+ | 4.2 грн |
PJA3409_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: -11.6A
Type of transistor: P-MOSFET
Drain current: -2.9A
Drain-source voltage: -30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: -11.6A
Type of transistor: P-MOSFET
Drain current: -2.9A
Drain-source voltage: -30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2490 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.5 грн |
45+ | 6.52 грн |
100+ | 5.66 грн |
205+ | 4.94 грн |
555+ | 4.67 грн |
3000+ | 4.5 грн |
PJA3409_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: -11.6A
Type of transistor: P-MOSFET
Drain current: -2.9A
Drain-source voltage: -30V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: -11.6A
Type of transistor: P-MOSFET
Drain current: -2.9A
Drain-source voltage: -30V
Power dissipation: 1.25W
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.42 грн |
70+ | 5.23 грн |
100+ | 4.71 грн |
205+ | 4.12 грн |
555+ | 3.89 грн |
PJA3411-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -20V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -20V
Power dissipation: 1.25W
на замовлення 2785 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.36 грн |
85+ | 4.27 грн |
235+ | 3.54 грн |
645+ | 3.35 грн |
PJA3411-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -20V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -20V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2785 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.43 грн |
50+ | 5.32 грн |
235+ | 4.25 грн |
645+ | 4.02 грн |
3000+ | 3.86 грн |
PJA3412-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Pulsed drain current: 16.4A
Type of transistor: N-MOSFET
Drain current: 4.1A
Drain-source voltage: 20V
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Pulsed drain current: 16.4A
Type of transistor: N-MOSFET
Drain current: 4.1A
Drain-source voltage: 20V
Power dissipation: 1.25W
на замовлення 2555 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.57 грн |
70+ | 5.4 грн |
100+ | 4.86 грн |
210+ | 4.03 грн |
570+ | 3.81 грн |
PJA3412-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Pulsed drain current: 16.4A
Type of transistor: N-MOSFET
Drain current: 4.1A
Drain-source voltage: 20V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Pulsed drain current: 16.4A
Type of transistor: N-MOSFET
Drain current: 4.1A
Drain-source voltage: 20V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2555 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.68 грн |
40+ | 6.74 грн |
100+ | 5.83 грн |
210+ | 4.84 грн |
570+ | 4.57 грн |
9000+ | 4.39 грн |
PJA3413_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Pulsed drain current: -13.6A
Type of transistor: P-MOSFET
Drain current: -3.4A
Drain-source voltage: -20V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Pulsed drain current: -13.6A
Type of transistor: P-MOSFET
Drain current: -3.4A
Drain-source voltage: -20V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2940 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.34 грн |
65+ | 4.32 грн |
250+ | 3.75 грн |
320+ | 3.11 грн |
880+ | 2.94 грн |
9000+ | 2.83 грн |
PJA3413_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Pulsed drain current: -13.6A
Type of transistor: P-MOSFET
Drain current: -3.4A
Drain-source voltage: -20V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Pulsed drain current: -13.6A
Type of transistor: P-MOSFET
Drain current: -3.4A
Drain-source voltage: -20V
Power dissipation: 1.25W
на замовлення 2940 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.28 грн |
105+ | 3.47 грн |
250+ | 3.13 грн |
320+ | 2.59 грн |
880+ | 2.45 грн |
PJA3415A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Pulsed drain current: -18A
Type of transistor: P-MOSFET
Drain current: -4.5A
Drain-source voltage: -20V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Pulsed drain current: -18A
Type of transistor: P-MOSFET
Drain current: -4.5A
Drain-source voltage: -20V
Power dissipation: 1.25W
на замовлення 2870 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.57 грн |
50+ | 7.4 грн |
100+ | 6.68 грн |
155+ | 5.55 грн |
415+ | 5.19 грн |
PJA3415A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Pulsed drain current: -18A
Type of transistor: P-MOSFET
Drain current: -4.5A
Drain-source voltage: -20V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Pulsed drain current: -18A
Type of transistor: P-MOSFET
Drain current: -4.5A
Drain-source voltage: -20V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2870 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.68 грн |
30+ | 9.22 грн |
100+ | 8.02 грн |
155+ | 6.66 грн |
415+ | 6.23 грн |
9000+ | 5.97 грн |
PJA3415AE_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PJA3415AE_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
PJA3416AE_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Pulsed drain current: 32A
Type of transistor: N-MOSFET
Drain current: 6.5A
Drain-source voltage: 20V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Pulsed drain current: 32A
Type of transistor: N-MOSFET
Drain current: 6.5A
Drain-source voltage: 20V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2925 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.68 грн |
40+ | 7.36 грн |
100+ | 6.32 грн |
190+ | 5.29 грн |
520+ | 4.95 грн |
9000+ | 4.78 грн |
PJA3416AE_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Pulsed drain current: 32A
Type of transistor: N-MOSFET
Drain current: 6.5A
Drain-source voltage: 20V
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Pulsed drain current: 32A
Type of transistor: N-MOSFET
Drain current: 6.5A
Drain-source voltage: 20V
Power dissipation: 1.25W
на замовлення 2925 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.57 грн |
65+ | 5.9 грн |
100+ | 5.26 грн |
190+ | 4.41 грн |
520+ | 4.12 грн |
PJA3419AE_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Case: SOT23
Kind of channel: enhanced
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Case: SOT23
Kind of channel: enhanced
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
товар відсутній
PJA3419AE_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Case: SOT23
Kind of channel: enhanced
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Case: SOT23
Kind of channel: enhanced
Type of transistor: P-MOSFET
товар відсутній
PJA3428_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 4Ω
Pulsed drain current: 0.6A
Type of transistor: N-MOSFET
Drain current: 0.3A
Drain-source voltage: 30V
Power dissipation: 0.5W
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 4Ω
Pulsed drain current: 0.6A
Type of transistor: N-MOSFET
Drain current: 0.3A
Drain-source voltage: 30V
Power dissipation: 0.5W
кількість в упаковці: 5 шт
на замовлення 4890 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.43 грн |
65+ | 4.34 грн |
250+ | 3.77 грн |
320+ | 3.11 грн |
880+ | 2.94 грн |
9000+ | 2.83 грн |
PJA3428_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 4Ω
Pulsed drain current: 0.6A
Type of transistor: N-MOSFET
Drain current: 0.3A
Drain-source voltage: 30V
Power dissipation: 0.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 4Ω
Pulsed drain current: 0.6A
Type of transistor: N-MOSFET
Drain current: 0.3A
Drain-source voltage: 30V
Power dissipation: 0.5W
на замовлення 4890 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.36 грн |
105+ | 3.48 грн |
250+ | 3.14 грн |
320+ | 2.6 грн |
880+ | 2.45 грн |
PJA3430_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Pulsed drain current: 8A
Type of transistor: N-MOSFET
Drain current: 2A
Drain-source voltage: 20V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Pulsed drain current: 8A
Type of transistor: N-MOSFET
Drain current: 2A
Drain-source voltage: 20V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2590 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.43 грн |
50+ | 5.35 грн |
235+ | 4.28 грн |
640+ | 4.05 грн |
3000+ | 3.88 грн |
PJA3430_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Pulsed drain current: 8A
Type of transistor: N-MOSFET
Drain current: 2A
Drain-source voltage: 20V
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Pulsed drain current: 8A
Type of transistor: N-MOSFET
Drain current: 2A
Drain-source voltage: 20V
Power dissipation: 1.25W
на замовлення 2590 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.36 грн |
85+ | 4.3 грн |
235+ | 3.56 грн |
640+ | 3.37 грн |
PJA3432-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 570mΩ
Pulsed drain current: 6.4A
Type of transistor: N-MOSFET
Drain current: 1.6A
Drain-source voltage: 30V
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 570mΩ
Pulsed drain current: 6.4A
Type of transistor: N-MOSFET
Drain current: 1.6A
Drain-source voltage: 30V
Power dissipation: 1.25W
на замовлення 2575 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.72 грн |
65+ | 5.52 грн |
100+ | 4.95 грн |
205+ | 4.1 грн |
560+ | 3.88 грн |
PJA3432-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 570mΩ
Pulsed drain current: 6.4A
Type of transistor: N-MOSFET
Drain current: 1.6A
Drain-source voltage: 30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 570mΩ
Pulsed drain current: 6.4A
Type of transistor: N-MOSFET
Drain current: 1.6A
Drain-source voltage: 30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2575 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.87 грн |
40+ | 6.88 грн |
100+ | 5.94 грн |
205+ | 4.92 грн |
560+ | 4.66 грн |
9000+ | 4.48 грн |
PJA3433-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
Drain current: -1.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
Drain current: -1.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
на замовлення 2485 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.57 грн |
60+ | 6.12 грн |
100+ | 5.48 грн |
185+ | 4.55 грн |
505+ | 4.27 грн |
PJA3433-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
Drain current: -1.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
Drain current: -1.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2485 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.68 грн |
35+ | 7.62 грн |
100+ | 6.57 грн |
185+ | 5.46 грн |
505+ | 5.12 грн |
9000+ | 5.03 грн |
PJA3433_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
Drain current: -1.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
Drain current: -1.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
кількість в упаковці: 1 шт
на замовлення 5865 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 25.73 грн |
16+ | 16.84 грн |
25+ | 14.1 грн |
100+ | 6.89 грн |
213+ | 4.69 грн |
585+ | 4.43 грн |
3000+ | 4.26 грн |
PJA3433_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
Drain current: -1.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
Drain current: -1.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
на замовлення 5865 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 21.44 грн |
27+ | 13.51 грн |
31+ | 11.75 грн |
100+ | 5.74 грн |
213+ | 3.9 грн |
585+ | 3.69 грн |
3000+ | 3.55 грн |
PJA3434_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 3Ω
Pulsed drain current: 1.5A
Type of transistor: N-MOSFET
Drain current: 0.75A
Drain-source voltage: 20V
Power dissipation: 0.5W
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 3Ω
Pulsed drain current: 1.5A
Type of transistor: N-MOSFET
Drain current: 0.75A
Drain-source voltage: 20V
Power dissipation: 0.5W
кількість в упаковці: 5 шт
на замовлення 2670 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.43 грн |
55+ | 4.87 грн |
250+ | 4.16 грн |
255+ | 3.9 грн |
705+ | 3.69 грн |
3000+ | 3.55 грн |
PJA3434_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 3Ω
Pulsed drain current: 1.5A
Type of transistor: N-MOSFET
Drain current: 0.75A
Drain-source voltage: 20V
Power dissipation: 0.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 3Ω
Pulsed drain current: 1.5A
Type of transistor: N-MOSFET
Drain current: 0.75A
Drain-source voltage: 20V
Power dissipation: 0.5W
на замовлення 2670 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.36 грн |
95+ | 3.91 грн |
250+ | 3.47 грн |
255+ | 3.25 грн |
705+ | 3.07 грн |
PJA3435_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 6Ω
Pulsed drain current: -1A
Type of transistor: P-MOSFET
Drain current: -0.5A
Drain-source voltage: -20V
Power dissipation: 0.5W
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 6Ω
Pulsed drain current: -1A
Type of transistor: P-MOSFET
Drain current: -0.5A
Drain-source voltage: -20V
Power dissipation: 0.5W
кількість в упаковці: 5 шт
на замовлення 2980 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.43 грн |
50+ | 5.37 грн |
235+ | 4.29 грн |
640+ | 4.05 грн |
3000+ | 3.91 грн |
PJA3435_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 6Ω
Pulsed drain current: -1A
Type of transistor: P-MOSFET
Drain current: -0.5A
Drain-source voltage: -20V
Power dissipation: 0.5W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 6Ω
Pulsed drain current: -1A
Type of transistor: P-MOSFET
Drain current: -0.5A
Drain-source voltage: -20V
Power dissipation: 0.5W
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.36 грн |
85+ | 4.31 грн |
235+ | 3.58 грн |
640+ | 3.38 грн |
PJA3436-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Pulsed drain current: 4.8A
Type of transistor: N-MOSFET
Drain current: 1.2A
Drain-source voltage: 20V
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Pulsed drain current: 4.8A
Type of transistor: N-MOSFET
Drain current: 1.2A
Drain-source voltage: 20V
Power dissipation: 1.25W
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.36 грн |
95+ | 3.91 грн |
250+ | 3.47 грн |
255+ | 3.25 грн |
705+ | 3.07 грн |
3000+ | 2.96 грн |
PJA3436-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Pulsed drain current: 4.8A
Type of transistor: N-MOSFET
Drain current: 1.2A
Drain-source voltage: 20V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Pulsed drain current: 4.8A
Type of transistor: N-MOSFET
Drain current: 1.2A
Drain-source voltage: 20V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.43 грн |
55+ | 4.87 грн |
250+ | 4.16 грн |
255+ | 3.9 грн |
705+ | 3.69 грн |
3000+ | 3.55 грн |
PJA3438-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 6Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.5A
Drain-source voltage: 50V
Power dissipation: 0.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 6Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.5A
Drain-source voltage: 50V
Power dissipation: 0.5W
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.36 грн |
85+ | 4.27 грн |
235+ | 3.54 грн |
645+ | 3.35 грн |
3000+ | 3.21 грн |
PJA3438-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 6Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.5A
Drain-source voltage: 50V
Power dissipation: 0.5W
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 6Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.5A
Drain-source voltage: 50V
Power dissipation: 0.5W
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.43 грн |
50+ | 5.32 грн |
235+ | 4.25 грн |
645+ | 4.02 грн |
3000+ | 3.86 грн |
PJA3439-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 13Ω
Pulsed drain current: -1A
Type of transistor: P-MOSFET
Drain current: -300mA
Drain-source voltage: -60V
Power dissipation: 0.5W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 13Ω
Pulsed drain current: -1A
Type of transistor: P-MOSFET
Drain current: -300mA
Drain-source voltage: -60V
Power dissipation: 0.5W
на замовлення 1910 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.36 грн |
85+ | 4.27 грн |
235+ | 3.54 грн |
645+ | 3.35 грн |
PJA3439-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 13Ω
Pulsed drain current: -1A
Type of transistor: P-MOSFET
Drain current: -300mA
Drain-source voltage: -60V
Power dissipation: 0.5W
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 13Ω
Pulsed drain current: -1A
Type of transistor: P-MOSFET
Drain current: -300mA
Drain-source voltage: -60V
Power dissipation: 0.5W
кількість в упаковці: 5 шт
на замовлення 1910 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.43 грн |
50+ | 5.32 грн |
235+ | 4.25 грн |
645+ | 4.02 грн |
3000+ | 3.86 грн |
PJA3440-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.3A; Idm: 17.2A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Pulsed drain current: 17.2A
Type of transistor: N-MOSFET
Drain current: 4.3A
Drain-source voltage: 40V
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.3A; Idm: 17.2A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Pulsed drain current: 17.2A
Type of transistor: N-MOSFET
Drain current: 4.3A
Drain-source voltage: 40V
Power dissipation: 1.25W
на замовлення 2710 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.57 грн |
50+ | 7.25 грн |
100+ | 6.4 грн |
135+ | 6.33 грн |
360+ | 5.97 грн |
500+ | 5.83 грн |
PJA3440-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.3A; Idm: 17.2A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Pulsed drain current: 17.2A
Type of transistor: N-MOSFET
Drain current: 4.3A
Drain-source voltage: 40V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.3A; Idm: 17.2A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Pulsed drain current: 17.2A
Type of transistor: N-MOSFET
Drain current: 4.3A
Drain-source voltage: 40V
Power dissipation: 1.25W
кількість в упаковці: 5 шт
на замовлення 2710 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.68 грн |
30+ | 9.04 грн |
100+ | 7.68 грн |
135+ | 7.6 грн |
360+ | 7.17 грн |
500+ | 7 грн |
3000+ | 6.91 грн |