Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1366) > Сторінка 15 з 23

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
P6SMBJ28CA_R1_00001 P6SMBJ28CA_R1_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ36CA-AU_R1_000A1 P6SMBJ36CA-AU_R1_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ36CA_R1_00001 P6SMBJ36CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
на замовлення 365 шт:
термін постачання 14-30 дні (днів)
17+26.66 грн
28+15.19 грн
100+10.07 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
P6SMBJ40A_R1_00001 P6SMBJ40A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ40CA_R2_00001 P6SMBJ40CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
на замовлення 5987 шт:
термін постачання 14-30 дні (днів)
27+16.89 грн
34+12.21 грн
46+9.08 грн
100+8.17 грн
250+7.68 грн
500+7.26 грн
1000+6.77 грн
3000+6.44 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
P6SMBJ43A-AU_R2_000A1 P6SMBJ43A-AU_R2_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 8.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ43A_R2_00001 P6SMBJ43A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 8.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ43CA-AU_R1_000A1 P6SMBJ43CA-AU_R1_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ43CA_R1_00001 P6SMBJ43CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ45A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷55.3V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ45CA-AU_R1_000A1 P6SMBJ45CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷55.3V; 8.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ45CA_R1_00001 P6SMBJ45CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷55.3V; 8.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ48A_R2_00001 P6SMBJ48A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ5.0CA_R1_00001 P6SMBJ5.0CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
на замовлення 595 шт:
термін постачання 14-30 дні (днів)
14+32.88 грн
23+18.40 грн
100+12.21 грн
500+9.41 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
P6SMBJ54CA-AU_R1_000A1 P6SMBJ54CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷66.3V; 6.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ54CA_R1_00001 P6SMBJ54CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷66.3V; 6.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ58A-AU_R1_000A1 P6SMBJ58A-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ58A_R1_00001 P6SMBJ58A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ6.5A_R1_00001 P6SMBJ6.5A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ6.5CA_R1_00001 P6SMBJ6.5CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ60A-AU_R1_000A1 P6SMBJ60A-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ60A_R1_00001 P6SMBJ60A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ60CA-AU_R1_000A1 P6SMBJ60CA-AU_R1_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ60CA_R1_00001 P6SMBJ60CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ64A-AU_R1_000A1 P6SMBJ64A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ64A_R1_00001 P6SMBJ64A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ64CA-AU_R2_000A1 P6SMBJ64CA-AU_R2_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ64CA_R1_00001 P6SMBJ64CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ7.5A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ7.5CA_R1_00001 P6SMBJ7.5CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 430 шт:
термін постачання 14-30 дні (днів)
18+24.89 грн
27+15.68 грн
100+10.65 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
P6SMBJ70A_R2_00001 P6SMBJ70A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷86V; 5.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 5.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ70CA_R1_00001 P6SMBJ70CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷86V; 5.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 5.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ78A_R1_00001 P6SMBJ78A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷95.8V; 4.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ78CA_R1_00001 P6SMBJ78CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷95.8V; 4.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 4.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ8.0CA_R1_00001 P6SMBJ8.0CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 44.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ85CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷104V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ9.0CA-AU_R1_006A1 P6SMBJ9.0CA-AU_R1_006A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ9.0CA_R1_00001 P6SMBJ9.0CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PBHV8110DH-AU_R1_000A1 PBHV8110DH-AU_R1_000A1 PanJit Semiconductor Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.4W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Power dissipation: 1.4W
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PBHV8110DW_R2_00701 PanJit Semiconductor Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: NPN
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
PBHV9110DW_R2_00701 PanJit Semiconductor Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
PCDB1065G1_R2_00001 PCDB1065G1_R2_00001 PanJit Semiconductor PCDB1065G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Max. off-state voltage: 650V
Load current: 10A
Max. forward impulse current: 0.55kA
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 1.8V
Max. load current: 40A
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
PCDB20120G1_R2_00001 PCDB20120G1_R2_00001 PanJit Semiconductor PCDB20120G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 20A; reel,tape
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 960A
Case: TO263
Kind of package: reel; tape
Max. forward voltage: 2V
Mounting: SMD
Power dissipation: 267.9W
Technology: SiC
Max. load current: 152A
Semiconductor structure: single diode
Leakage current: 180µA
Type of diode: Schottky rectifying
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PCDD05120G1_L2_00001 PCDD05120G1_L2_00001 PanJit Semiconductor PCDD05120G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252AA; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252AA
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. load current: 40A
Max. forward impulse current: 520A
Kind of package: reel; tape
Power dissipation: 120W
Leakage current: 50µA
товару немає в наявності
В кошику  од. на суму  грн.
PCDE10120G1_R2_00001 PCDE10120G1_R2_00001 PanJit Semiconductor Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 10A; reel,tape
Mounting: SMD
Max. forward impulse current: 0.64kA
Max. forward voltage: 2V
Power dissipation: 164.8W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 76A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Case: TO263
Type of diode: Schottky rectifying
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PCDE1065G1_R2_00001 PCDE1065G1_R2_00001 PanJit Semiconductor Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape
Mounting: SMD
Max. forward impulse current: 0.55kA
Max. forward voltage: 1.8V
Power dissipation: 102.7W
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 44A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 70µA
Case: TO263
Type of diode: Schottky rectifying
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PCDF0465G1_T0_00601 PanJit Semiconductor PCDF0465G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Power dissipation: 53.6W
Kind of package: tube
Technology: SiC
Max. load current: 20A
Leakage current: 40µA
Max. forward impulse current: 360A
товару немає в наявності
В кошику  од. на суму  грн.
PCDF0465G3_T0_00601 PanJit Semiconductor Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.5V
Power dissipation: 53.6W
Kind of package: Ammo Pack
товару немає в наявності
В кошику  од. на суму  грн.
PCDF0665G1_T0_00601 PanJit Semiconductor PCDF0665G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Max. off-state voltage: 650V
Load current: 6A
Max. forward impulse current: 0.32kA
Case: ITO220AC
Kind of package: tube
Mounting: THT
Max. forward voltage: 1.8V
Power dissipation: 70.8W
Technology: SiC
Max. load current: 24A
Semiconductor structure: single diode
Leakage current: 50µA
Type of diode: Schottky rectifying
товару немає в наявності
В кошику  од. на суму  грн.
PCDF0665G3_T0_00601 PanJit Semiconductor Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Max. off-state voltage: 650V
Load current: 6A
Case: ITO220AC
Kind of package: Ammo Pack
Mounting: THT
Max. forward voltage: 1.5V
Power dissipation: 70.8W
Semiconductor structure: single diode
Type of diode: Schottky rectifying
товару немає в наявності
В кошику  од. на суму  грн.
PCDH20120CCG1_T0_00601 PCDH20120CCG1_T0_00601 PanJit Semiconductor PCDH20120CCG1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 52A
Max. forward impulse current: 720A
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 167.8W
товару немає в наявності
В кошику  од. на суму  грн.
PCDH20120CCGB_T0_00601 PanJit Semiconductor Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 72A
Max. forward impulse current: 0.92kA
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 1.9V
Power dissipation: 209W
товару немає в наявності
В кошику  од. на суму  грн.
PCDP05120G1_T0_00001 PCDP05120G1_T0_00001 PanJit Semiconductor PCDP05120G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; Ufmax: 2V
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 129.3W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Semiconductor structure: single diode
Leakage current: 50µA
Type of diode: Schottky rectifying
Max. forward impulse current: 520A
товару немає в наявності
В кошику  од. на суму  грн.
PCDP15120G1_T0_00001 PCDP15120G1_T0_00001 PanJit Semiconductor PCDP15120G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Mounting: THT
Max. forward impulse current: 880A
Max. forward voltage: 2V
Power dissipation: 223.9W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 15A
Max. load current: 120A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 140µA
Case: TO220AC
Type of diode: Schottky rectifying
товару немає в наявності
В кошику  од. на суму  грн.
PDZ10B-AU_R1_000A1 PDZ10B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PDZ10B_R1_00001 PDZ10B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
PDZ11B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 11V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PDZ11B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 11V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
PDZ12B-AU_R1_000A1 PDZ12B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 12V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PDZ12B_R1_00001 PDZ12B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 12V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ28CA_R1_00001
P6SMBJ28CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ36CA-AU_R1_000A1
P6SMBJ36CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ36CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ36CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
на замовлення 365 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
17+26.66 грн
28+15.19 грн
100+10.07 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
P6SMBJ40A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ40A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ40CA_R2_00001
P6SMBJ40CA_R2_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
на замовлення 5987 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
27+16.89 грн
34+12.21 грн
46+9.08 грн
100+8.17 грн
250+7.68 грн
500+7.26 грн
1000+6.77 грн
3000+6.44 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
P6SMBJ43A-AU_R2_000A1
P6SMBJ43A-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 8.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ43A_R2_00001
P6SMBJ43A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 8.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ43CA-AU_R1_000A1
P6SMBJ43CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ43CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ43CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ45A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷55.3V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ45CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ45CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷55.3V; 8.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ45CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ45CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷55.3V; 8.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ48A_R2_00001
P6SMBJ48A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ5.0CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
на замовлення 595 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
14+32.88 грн
23+18.40 грн
100+12.21 грн
500+9.41 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
P6SMBJ54CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ54CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷66.3V; 6.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ54CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ54CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷66.3V; 6.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ58A-AU_R1_000A1
P6SMBJ58A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ58A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ58A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ6.5A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ6.5A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ6.5CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ6.5CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ60A-AU_R1_000A1
P6SMBJ60A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ60A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ60A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ60CA-AU_R1_000A1
P6SMBJ60CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ60CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ60CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ64A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ64A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ64A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ64A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ64CA-AU_R2_000A1
P6SMBJ64CA-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ64CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ64CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ7.5A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ7.5CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.5CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 430 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18+24.89 грн
27+15.68 грн
100+10.65 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
P6SMBJ70A_R2_00001
P6SMBJ70A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷86V; 5.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 5.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ70CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ70CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷86V; 5.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 5.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ78A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ78A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷95.8V; 4.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ78CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ78CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷95.8V; 4.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 4.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ8.0CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ8.0CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 44.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ85CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷104V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ9.0CA-AU_R1_006A1
P6SMBJ9.0CA-AU_R1_006A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ9.0CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ9.0CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PBHV8110DH-AU_R1_000A1
PBHV8110DH-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.4W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Power dissipation: 1.4W
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PBHV8110DW_R2_00701
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: NPN
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
PBHV9110DW_R2_00701
Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
PCDB1065G1_R2_00001 PCDB1065G1.pdf
PCDB1065G1_R2_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Max. off-state voltage: 650V
Load current: 10A
Max. forward impulse current: 0.55kA
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 1.8V
Max. load current: 40A
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
PCDB20120G1_R2_00001 PCDB20120G1.pdf
PCDB20120G1_R2_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 20A; reel,tape
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 960A
Case: TO263
Kind of package: reel; tape
Max. forward voltage: 2V
Mounting: SMD
Power dissipation: 267.9W
Technology: SiC
Max. load current: 152A
Semiconductor structure: single diode
Leakage current: 180µA
Type of diode: Schottky rectifying
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PCDD05120G1_L2_00001 PCDD05120G1.pdf
PCDD05120G1_L2_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252AA; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252AA
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. load current: 40A
Max. forward impulse current: 520A
Kind of package: reel; tape
Power dissipation: 120W
Leakage current: 50µA
товару немає в наявності
В кошику  од. на суму  грн.
PCDE10120G1_R2_00001
PCDE10120G1_R2_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 10A; reel,tape
Mounting: SMD
Max. forward impulse current: 0.64kA
Max. forward voltage: 2V
Power dissipation: 164.8W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 76A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Case: TO263
Type of diode: Schottky rectifying
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PCDE1065G1_R2_00001
PCDE1065G1_R2_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape
Mounting: SMD
Max. forward impulse current: 0.55kA
Max. forward voltage: 1.8V
Power dissipation: 102.7W
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 44A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 70µA
Case: TO263
Type of diode: Schottky rectifying
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PCDF0465G1_T0_00601 PCDF0465G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Power dissipation: 53.6W
Kind of package: tube
Technology: SiC
Max. load current: 20A
Leakage current: 40µA
Max. forward impulse current: 360A
товару немає в наявності
В кошику  од. на суму  грн.
PCDF0465G3_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.5V
Power dissipation: 53.6W
Kind of package: Ammo Pack
товару немає в наявності
В кошику  од. на суму  грн.
PCDF0665G1_T0_00601 PCDF0665G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Max. off-state voltage: 650V
Load current: 6A
Max. forward impulse current: 0.32kA
Case: ITO220AC
Kind of package: tube
Mounting: THT
Max. forward voltage: 1.8V
Power dissipation: 70.8W
Technology: SiC
Max. load current: 24A
Semiconductor structure: single diode
Leakage current: 50µA
Type of diode: Schottky rectifying
товару немає в наявності
В кошику  од. на суму  грн.
PCDF0665G3_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Max. off-state voltage: 650V
Load current: 6A
Case: ITO220AC
Kind of package: Ammo Pack
Mounting: THT
Max. forward voltage: 1.5V
Power dissipation: 70.8W
Semiconductor structure: single diode
Type of diode: Schottky rectifying
товару немає в наявності
В кошику  од. на суму  грн.
PCDH20120CCG1_T0_00601 PCDH20120CCG1.pdf
PCDH20120CCG1_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 52A
Max. forward impulse current: 720A
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 167.8W
товару немає в наявності
В кошику  од. на суму  грн.
PCDH20120CCGB_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 72A
Max. forward impulse current: 0.92kA
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 1.9V
Power dissipation: 209W
товару немає в наявності
В кошику  од. на суму  грн.
PCDP05120G1_T0_00001 PCDP05120G1.pdf
PCDP05120G1_T0_00001
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; Ufmax: 2V
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 129.3W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Semiconductor structure: single diode
Leakage current: 50µA
Type of diode: Schottky rectifying
Max. forward impulse current: 520A
товару немає в наявності
В кошику  од. на суму  грн.
PCDP15120G1_T0_00001 PCDP15120G1.pdf
PCDP15120G1_T0_00001
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Mounting: THT
Max. forward impulse current: 880A
Max. forward voltage: 2V
Power dissipation: 223.9W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 15A
Max. load current: 120A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 140µA
Case: TO220AC
Type of diode: Schottky rectifying
товару немає в наявності
В кошику  од. на суму  грн.
PDZ10B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ10B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PDZ10B_R1_00001 PDZ4.7B_SER.pdf
PDZ10B_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
PDZ11B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 11V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PDZ11B_R1_00001 PDZ4.7B_SER.pdf
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 11V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
PDZ12B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ12B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 12V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PDZ12B_R1_00001 PDZ4.7B_SER.pdf
PDZ12B_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 12V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.