Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (992) > Сторінка 15 з 17
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| PJS6815_S1_00001 | PanJit Semiconductor |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SOT363 Drain current: 0.36A Gate-source voltage: 20V Drain-source voltage: 50V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PJSD03LCFN2_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1 Type of diode: TVS Case: DFN1006-2 Mounting: SMD Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Capacitance: 25pF Leakage current: 2.5µA Max. forward impulse current: 6A Number of channels: 1 Breakdown voltage: 5.4V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PJSD24TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1 Type of diode: TVS Case: SOD523 Mounting: SMD Max. off-state voltage: 24V Semiconductor structure: unidirectional Capacitance: 25pF Leakage current: 5µA Max. forward impulse current: 3A Number of channels: 1 Breakdown voltage: 26.7V Peak pulse power dissipation: 0.12kW Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
 |
PJSD24TS_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape Type of diode: TVS Case: SOD523 Mounting: SMD Max. off-state voltage: 24V Semiconductor structure: unidirectional Capacitance: 25pF Leakage current: 5µA Kind of package: reel; tape Breakdown voltage: 26.7V Peak pulse power dissipation: 0.12kW Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| PJSD36CW-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.35kW Max. off-state voltage: 36V Breakdown voltage: 40.57V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 1µA Capacitance: 45pF Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PJSD36CW_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.35kW Max. off-state voltage: 36V Breakdown voltage: 29.4V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 1µA Capacitance: 45pF Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PJSOT24C-05-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2 Type of diode: TVS Breakdown voltage: 29.4V Max. forward impulse current: 12A Peak pulse power dissipation: 0.35kW Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Leakage current: 1µA Number of channels: 2 Capacitance: 0.15nF Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PJSOT36_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 40V; 9A; 0.5kW; unidirectional; SOT23; Ch: 1 Mounting: SMD Number of channels: 1 Max. forward impulse current: 9A Max. off-state voltage: 36V Breakdown voltage: 40V Peak pulse power dissipation: 0.5kW Semiconductor structure: unidirectional Case: SOT23 Type of diode: TVS Capacitance: 80pF Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PJT7808_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -250mA Gate-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PJT7812_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Kind of package: reel; tape Case: SOT363 Kind of channel: enhancement Type of transistor: P-MOSFET x2 Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.25A Gate-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
 |
PJW4N06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Pulsed drain current: 8A Power dissipation: 2.6W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
PJW4N06A_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Pulsed drain current: 8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| PJX8872B_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PMS210_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4 Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 2A Max. forward impulse current: 70A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PMS310_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4 Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 3A Max. forward impulse current: 110A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
 |
PMS410_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4 Kind of package: reel; tape Features of semiconductor devices: glass passivated Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 4A Max. forward impulse current: 120A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| PMSM410_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M6 Case: M6 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1V Load current: 4A Max. forward impulse current: 120A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PMSM608_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1V Load current: 6A Max. forward impulse current: 150A Case: M6 Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PMSM810_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6 Case: M6 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1V Load current: 8A Max. forward impulse current: 200A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PS1223-D32_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5V; 5A; bidirectional; DFN2; Ch: 1 Type of diode: TVS Breakdown voltage: 5V Max. forward impulse current: 5A Semiconductor structure: bidirectional Mounting: SMD Case: DFN2 Max. off-state voltage: 2.8V Leakage current: 0.5µA Number of channels: 1 Capacitance: 0.17pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PS161M-D62_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1006-2 Case: DFN1006-2 Mounting: SMD Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PS4313-DFA_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5V; 5A; unidirectional; Ch: 4 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 1µA Max. off-state voltage: 3.3V Number of channels: 4 Max. forward impulse current: 5A Breakdown voltage: 5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PSMB033N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PSMB055N08NS1_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Pulsed drain current: 360A Power dissipation: 113.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PSMB055N08NS1_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Pulsed drain current: 360A Power dissipation: 113.6W Case: TO247AD-3; TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PSMN015N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 398A Pulsed drain current: 1592A Power dissipation: 250W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PSMP033N10NS2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
 |
PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 111A Pulsed drain current: 360A Power dissipation: 136W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 65.8nC Kind of package: tube Kind of channel: enhancement |
на замовлення 79 шт: термін постачання 14-30 дні (днів) |
|
||||||
| PSMQB280N10LS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PSMQC040N08NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: 20V Drain-source voltage: 60V Drain current: 68A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
 |
PSMQC040N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 53nC On-state resistance: 6.5mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 122A Power dissipation: 125W Pulsed drain current: 488A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| PSMQC042N10LS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PSMQC060N06LS1-AU_R2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PSMQC060N06LS1_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PSMQC280N10LS2-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PSMQC280N10LS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PSMQF035N08NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PSMQF037N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PZ1AH18B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123HE; single diode Application: automotive industry Case: SOD123HE Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Power dissipation: 1W Tolerance: ±5% Zener voltage: 18V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PZ1AH18B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123HE; single diode Case: SOD123HE Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Power dissipation: 1W Tolerance: ±5% Zener voltage: 18V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PZ1AH27B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode Case: SOD123HE Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Application: automotive industry Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PZ1AH27B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode Case: SOD123HE Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
 |
PZ1AL27B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123F; single diode Case: SOD123F Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Application: automotive industry Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| PZD22B13C-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 13V; SMD; reel,tape; SOT323 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: common anode; double Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PZD22B15C-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 15V; SMD; reel,tape; SOT323 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: common anode; double Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PZD22B17C-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 17V; SMD; reel,tape; SOT323 Type of diode: Zener Semiconductor structure: common anode; double Case: SOT323 Mounting: SMD Kind of package: reel; tape Zener voltage: 17V Application: automotive industry Power dissipation: 0.2W Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PZD22B17C_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 17V; SMD; reel,tape; SOT323 Type of diode: Zener Semiconductor structure: common anode; double Case: SOT323 Mounting: SMD Kind of package: reel; tape Zener voltage: 17V Power dissipation: 0.2W Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PZD22B4V3C-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 4.3V; SMD; reel,tape; SOT323 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: common anode; double Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PZD22B4V3C_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 4.3V; SMD; reel,tape; SOT323 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: common anode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PZD22B6V8C-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SOT323 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: common anode; double Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PZD22B6V8C_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SOT323 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: common anode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
|
PZS1115BES_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 15V; SMD; reel,tape; SOD523; single diode Case: SOD523 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 0.15W Zener voltage: 15V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
PZS1117BES_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 17V; SMD; reel,tape; SOD523; single diode Case: SOD523 Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 17V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
PZS1120BES_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 20V; SMD; reel,tape; SOD523; single diode Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD523 Type of diode: Zener Power dissipation: 0.15W Tolerance: ±5% Zener voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
PZS1125BES_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 25V; SMD; reel,tape; SOD523; single diode Case: SOD523 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.15W Tolerance: ±5% Zener voltage: 25V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
PZS1139BES_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 39V; SMD; reel,tape; SOD523; single diode Case: SOD523 Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Power dissipation: 0.15W Tolerance: ±5% Zener voltage: 39V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
PZS115V3BES_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 5.3V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Semiconductor structure: single diode Case: SOD523 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.15W Tolerance: ±5% Zener voltage: 5.3V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
PZS5115BAS-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 15V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| PZS5115BCH-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD323HE; single diode Case: SOD323HE Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 15V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
|
PZS5125BAS-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD123; single diode Application: automotive industry Case: SOD123 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 25V |
товару немає в наявності |
В кошику од. на суму грн. |
| PJS6815_S1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| PJSD03LCFN2_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
товару немає в наявності
В кошику
од. на суму грн.
| PJSD24TS-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJSD24TS_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| PJSD36CW-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 40.57V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 40.57V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJSD36CW_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 29.4V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 29.4V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| PJSOT24C-05-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJSOT36_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 9A; 0.5kW; unidirectional; SOT23; Ch: 1
Mounting: SMD
Number of channels: 1
Max. forward impulse current: 9A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Case: SOT23
Type of diode: TVS
Capacitance: 80pF
Leakage current: 1µA
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 9A; 0.5kW; unidirectional; SOT23; Ch: 1
Mounting: SMD
Number of channels: 1
Max. forward impulse current: 9A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Case: SOT23
Type of diode: TVS
Capacitance: 80pF
Leakage current: 1µA
товару немає в наявності
В кошику
од. на суму грн.
| PJT7808_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Gate-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| PJT7812_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Kind of package: reel; tape
Case: SOT363
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Kind of package: reel; tape
Case: SOT363
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| PJW4N06A-AU_R2_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJW4N06A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJX8872B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PMS210_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 2A
Max. forward impulse current: 70A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 2A
Max. forward impulse current: 70A
Max. off-state voltage: 1kV
товару немає в наявності
В кошику
од. на суму грн.
| PMS310_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
товару немає в наявності
В кошику
од. на суму грн.
| PMS410_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
товару немає в наявності
В кошику
од. на суму грн.
| PMSM410_R2_00301 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M6
Case: M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M6
Case: M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
товару немає в наявності
В кошику
од. на суму грн.
| PMSM608_R2_00301 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 150A
Case: M6
Max. off-state voltage: 0.8kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 150A
Case: M6
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику
од. на суму грн.
| PMSM810_R2_00301 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Case: M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 8A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Case: M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 8A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
товару немає в наявності
В кошику
од. на суму грн.
| PS1223-D32_R1_00301 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5V; 5A; bidirectional; DFN2; Ch: 1
Type of diode: TVS
Breakdown voltage: 5V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN2
Max. off-state voltage: 2.8V
Leakage current: 0.5µA
Number of channels: 1
Capacitance: 0.17pF
Category: Protection diodes - arrays
Description: Diode: TVS; 5V; 5A; bidirectional; DFN2; Ch: 1
Type of diode: TVS
Breakdown voltage: 5V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN2
Max. off-state voltage: 2.8V
Leakage current: 0.5µA
Number of channels: 1
Capacitance: 0.17pF
товару немає в наявності
В кошику
од. на суму грн.
| PS161M-D62_R1_00301 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PS4313-DFA_R1_00301 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5V; 5A; unidirectional; Ch: 4
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. off-state voltage: 3.3V
Number of channels: 4
Max. forward impulse current: 5A
Breakdown voltage: 5V
Category: Protection diodes - arrays
Description: Diode: TVS; 5V; 5A; unidirectional; Ch: 4
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. off-state voltage: 3.3V
Number of channels: 4
Max. forward impulse current: 5A
Breakdown voltage: 5V
товару немає в наявності
В кошику
од. на суму грн.
| PSMB033N10NS2_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMB055N08NS1_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMB055N08NS1_T0_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO247AD-3; TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO247AD-3; TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMN015N10NS2_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMP033N10NS2_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMP055N08NS1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 79 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 135.88 грн |
| 10+ | 74.02 грн |
| 50+ | 67.29 грн |
| PSMQB280N10LS2_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMQC040N08NS2_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
товару немає в наявності
В кошику
од. на суму грн.
| PSMQC040N10NS2_R2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 122A
Power dissipation: 125W
Pulsed drain current: 488A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 122A
Power dissipation: 125W
Pulsed drain current: 488A
товару немає в наявності
В кошику
од. на суму грн.
| PSMQC042N10LS2_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMQC060N06LS1-AU_R2_006A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PSMQC060N06LS1_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMQC280N10LS2-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PSMQC280N10LS2_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMQF035N08NS2_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMQF037N10NS2_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PZ1AH18B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123HE; single diode
Application: automotive industry
Case: SOD123HE
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 18V
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123HE; single diode
Application: automotive industry
Case: SOD123HE
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 18V
товару немає в наявності
В кошику
од. на суму грн.
| PZ1AH18B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123HE; single diode
Case: SOD123HE
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 18V
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123HE; single diode
Case: SOD123HE
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 18V
товару немає в наявності
В кошику
од. на суму грн.
| PZ1AH27B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Case: SOD123HE
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Application: automotive industry
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Case: SOD123HE
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Application: automotive industry
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| PZ1AH27B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Case: SOD123HE
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Case: SOD123HE
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| PZ1AL27B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123F; single diode
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Application: automotive industry
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123F; single diode
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Application: automotive industry
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| PZD22B13C-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 13V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 13V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PZD22B15C-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 15V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 15V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PZD22B17C-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 17V; SMD; reel,tape; SOT323
Type of diode: Zener
Semiconductor structure: common anode; double
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Zener voltage: 17V
Application: automotive industry
Power dissipation: 0.2W
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 17V; SMD; reel,tape; SOT323
Type of diode: Zener
Semiconductor structure: common anode; double
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Zener voltage: 17V
Application: automotive industry
Power dissipation: 0.2W
Tolerance: ±5%
товару немає в наявності
В кошику
од. на суму грн.
| PZD22B17C_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 17V; SMD; reel,tape; SOT323
Type of diode: Zener
Semiconductor structure: common anode; double
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Zener voltage: 17V
Power dissipation: 0.2W
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 17V; SMD; reel,tape; SOT323
Type of diode: Zener
Semiconductor structure: common anode; double
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Zener voltage: 17V
Power dissipation: 0.2W
Tolerance: ±5%
товару немає в наявності
В кошику
од. на суму грн.
| PZD22B4V3C-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.3V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.3V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PZD22B4V3C_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.3V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.3V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
товару немає в наявності
В кошику
од. на суму грн.
| PZD22B6V8C-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PZD22B6V8C_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
товару немає в наявності
В кошику
од. на суму грн.
| PZS1115BES_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 15V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.15W
Zener voltage: 15V
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 15V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.15W
Zener voltage: 15V
товару немає в наявності
В кошику
од. на суму грн.
| PZS1117BES_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 17V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 17V
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 17V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 17V
товару немає в наявності
В кошику
од. на суму грн.
| PZS1120BES_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 20V; SMD; reel,tape; SOD523; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD523
Type of diode: Zener
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 20V
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 20V; SMD; reel,tape; SOD523; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD523
Type of diode: Zener
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| PZS1125BES_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 25V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 25V
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 25V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 25V
товару немає в наявності
В кошику
од. на суму грн.
| PZS1139BES_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 39V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 39V
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 39V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 39V
товару немає в наявності
В кошику
од. на суму грн.
| PZS115V3BES_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.3V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 5.3V
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.3V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 5.3V
товару немає в наявності
В кошику
од. на суму грн.
| PZS5115BAS-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 15V
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 15V
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PZS5115BCH-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD323HE; single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 15V
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD323HE; single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 15V
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PZS5125BAS-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 25V
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 25V
товару немає в наявності
В кошику
од. на суму грн.