Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1220) > Сторінка 15 з 21
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PJA3407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2915 шт: термін постачання 14-21 дні (днів) |
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PJA3407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2915 шт: термін постачання 21-30 дні (днів) |
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| PJA3409_R1_00001 | PanJit Semiconductor |
PJA3409-R1 SMD P channel transistors |
на замовлення 2380 шт: термін постачання 14-21 дні (днів) |
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| PJA3411-AU_R1_000A1 | PanJit Semiconductor |
PJA3411-AU-R1 SMD P channel transistors |
на замовлення 2500 шт: термін постачання 14-21 дні (днів) |
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| PJA3412-AU_R1_000A1 | PanJit Semiconductor |
PJA3412-AU-R1 SMD N channel transistors |
на замовлення 2136 шт: термін постачання 14-21 дні (днів) |
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| PJA3412_R1_00501 | PanJit Semiconductor | PJA3412-R1 SMD N channel transistors |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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| PJA3413_R1_00001 | PanJit Semiconductor |
PJA3413-R1 SMD P channel transistors |
на замовлення 2370 шт: термін постачання 14-21 дні (днів) |
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| PJA3415A-AU_R1_000A1 | PanJit Semiconductor |
PJA3415A-AU-R1 SMD P channel transistors |
на замовлення 2840 шт: термін постачання 14-21 дні (днів) |
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PJA3416AE_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Pulsed drain current: 32A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 34mΩ Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2460 шт: термін постачання 14-21 дні (днів) |
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PJA3416AE_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Pulsed drain current: 32A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 34mΩ Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2460 шт: термін постачання 21-30 дні (днів) |
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| PJA3428_R1_00001 | PanJit Semiconductor |
PJA3428-R1 SMD N channel transistors |
на замовлення 7390 шт: термін постачання 14-21 дні (днів) |
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| PJA3430-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT223 Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.6A Gate-source voltage: 20V Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJA3430_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 8A Drain current: 2A Gate charge: 1.8nC On-state resistance: 0.4Ω Power dissipation: 1.25W Gate-source voltage: ±8V Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2565 шт: термін постачання 14-21 дні (днів) |
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PJA3430_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 8A Drain current: 2A Gate charge: 1.8nC On-state resistance: 0.4Ω Power dissipation: 1.25W Gate-source voltage: ±8V Kind of channel: enhancement |
на замовлення 2565 шт: термін постачання 21-30 дні (днів) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 6.4A Drain current: 1.6A Gate charge: 1.5nC On-state resistance: 570mΩ Power dissipation: 1.25W Gate-source voltage: ±8V Application: automotive industry Kind of channel: enhancement |
на замовлення 1770 шт: термін постачання 21-30 дні (днів) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 6.4A Drain current: 1.6A Gate charge: 1.5nC On-state resistance: 570mΩ Power dissipation: 1.25W Gate-source voltage: ±8V Application: automotive industry Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1770 шт: термін постачання 14-21 дні (днів) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -4.4A Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Gate-source voltage: ±8V Application: automotive industry Kind of channel: enhancement |
на замовлення 1455 шт: термін постачання 21-30 дні (днів) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -4.4A Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Gate-source voltage: ±8V Application: automotive industry Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1455 шт: термін постачання 14-21 дні (днів) |
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PJA3433_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -4.4A Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Gate-source voltage: ±8V Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 7014 шт: термін постачання 14-21 дні (днів) |
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PJA3433_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -4.4A Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Gate-source voltage: ±8V Kind of channel: enhancement |
на замовлення 7014 шт: термін постачання 21-30 дні (днів) |
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| PJA3434-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563 Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Gate-source voltage: 20V Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJA3434_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 1.5A Drain current: 0.75A Gate charge: 1.4nC On-state resistance: 3Ω Power dissipation: 0.5W Gate-source voltage: ±10V Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 3770 шт: термін постачання 14-21 дні (днів) |
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PJA3434_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 1.5A Drain current: 0.75A Gate charge: 1.4nC On-state resistance: 3Ω Power dissipation: 0.5W Gate-source voltage: ±10V Kind of channel: enhancement |
на замовлення 3770 шт: термін постачання 21-30 дні (днів) |
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PJA3435_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -1A Drain current: -0.5A Gate charge: 1.4nC On-state resistance: 6Ω Power dissipation: 0.5W Gate-source voltage: ±10V Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 5960 шт: термін постачання 14-21 дні (днів) |
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PJA3435_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -1A Drain current: -0.5A Gate charge: 1.4nC On-state resistance: 6Ω Power dissipation: 0.5W Gate-source voltage: ±10V Kind of channel: enhancement |
на замовлення 5960 шт: термін постачання 21-30 дні (днів) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 4.8A Drain current: 1.2A Gate charge: 0.9nC On-state resistance: 0.9Ω Power dissipation: 1.25W Gate-source voltage: ±12V Application: automotive industry Kind of channel: enhancement |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 4.8A Drain current: 1.2A Gate charge: 0.9nC On-state resistance: 0.9Ω Power dissipation: 1.25W Gate-source voltage: ±12V Application: automotive industry Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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| PJA3436_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563 Type of transistor: N/P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.5A Gate-source voltage: 10V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 50V Pulsed drain current: 1.2A Drain current: 0.5A Gate charge: 0.95nC On-state resistance: 6Ω Power dissipation: 0.5W Gate-source voltage: ±20V Application: automotive industry Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 50V Pulsed drain current: 1.2A Drain current: 0.5A Gate charge: 0.95nC On-state resistance: 6Ω Power dissipation: 0.5W Gate-source voltage: ±20V Application: automotive industry Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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| PJA3438_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563 Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.7A Gate-source voltage: 8V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJA3439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -300mA Gate charge: 1.1nC On-state resistance: 13Ω Power dissipation: 0.5W Gate-source voltage: ±20V Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJA3439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -300mA Gate charge: 1.1nC On-state resistance: 13Ω Power dissipation: 0.5W Gate-source voltage: ±20V Application: automotive industry Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJA3439_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563 Type of transistor: P-MOSFET x2 Kind of package: reel; tape Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 20V Drain current: -600mA Gate-source voltage: 8V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJA3440-AU_R1_000A1 | PanJit Semiconductor |
PJA3440-AU-R1 SMD N channel transistors |
на замовлення 6000 шт: термін постачання 14-21 дні (днів) |
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| PJA3441-AU_R1_000A1 | PanJit Semiconductor |
PJA3441-AU-R1 SMD P channel transistors |
на замовлення 2725 шт: термін постачання 14-21 дні (днів) |
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| PJA3441_R1_00501 | PanJit Semiconductor | PJA3441-R1 SMD P channel transistors |
на замовлення 1863 шт: термін постачання 14-21 дні (днів) |
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PJA3460-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 1013 шт: термін постачання 21-30 дні (днів) |
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PJA3460-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 1013 шт: термін постачання 14-21 дні (днів) |
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PJA3460_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 3485 шт: термін постачання 14-21 дні (днів) |
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PJA3460_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3485 шт: термін постачання 21-30 дні (днів) |
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| PJA3463_R1_00001 | PanJit Semiconductor |
PJA3463-R1 SMD P channel transistors |
на замовлення 845 шт: термін постачання 14-21 дні (днів) |
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| PJA3471_R1_00501 | PanJit Semiconductor | PJA3471-R1 SMD P channel transistors |
на замовлення 12065 шт: термін постачання 14-21 дні (днів) |
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| PJB120N04S-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 58A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJB120N04V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 166A Case: TO220AB Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJB240N04S7-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJB240N04V7-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 60A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJC138K-AU_R1_000A1 | PanJit Semiconductor |
PJC138K-AU-R1 SMD N channel transistors |
на замовлення 2059 шт: термін постачання 14-21 дні (днів) |
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| PJC7400_R1_00001 | PanJit Semiconductor |
PJC7400-R1 SMD N channel transistors |
на замовлення 5455 шт: термін постачання 14-21 дні (днів) |
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| PJC7401_R1_00001 | PanJit Semiconductor |
PJC7401-R1 SMD P channel transistors |
на замовлення 205 шт: термін постачання 14-21 дні (днів) |
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PJC7404_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323 Kind of package: reel; tape Case: SOT323 Kind of channel: enhancement Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 1A Gate charge: 1.6nC On-state resistance: 0.4Ω Power dissipation: 0.35W Pulsed drain current: 4A Gate-source voltage: ±8V кількість в упаковці: 1 шт |
на замовлення 5990 шт: термін постачання 14-21 дні (днів) |
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PJC7404_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323 Kind of package: reel; tape Case: SOT323 Kind of channel: enhancement Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 1A Gate charge: 1.6nC On-state resistance: 0.4Ω Power dissipation: 0.35W Pulsed drain current: 4A Gate-source voltage: ±8V |
на замовлення 5990 шт: термін постачання 21-30 дні (днів) |
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PJC7407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW Mounting: SMD Case: SOT323 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: -1.3A Drain-source voltage: -20V Pulsed drain current: -5.2A Gate charge: 5.4nC On-state resistance: 0.2Ω Power dissipation: 0.35W Gate-source voltage: ±12V кількість в упаковці: 1 шт |
на замовлення 7545 шт: термін постачання 14-21 дні (днів) |
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PJC7407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW Mounting: SMD Case: SOT323 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: -1.3A Drain-source voltage: -20V Pulsed drain current: -5.2A Gate charge: 5.4nC On-state resistance: 0.2Ω Power dissipation: 0.35W Gate-source voltage: ±12V |
на замовлення 7545 шт: термін постачання 21-30 дні (днів) |
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PJC7428_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323 Case: SOT323 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.9nC On-state resistance: 4Ω Drain current: 0.3A Power dissipation: 0.35W Pulsed drain current: 0.6A Gate-source voltage: ±10V Drain-source voltage: 30V Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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PJC7428_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323 Case: SOT323 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.9nC On-state resistance: 4Ω Drain current: 0.3A Power dissipation: 0.35W Pulsed drain current: 0.6A Gate-source voltage: ±10V Drain-source voltage: 30V Kind of package: reel; tape |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PJC7439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -250mA Gate charge: 1.1nC Power dissipation: 0.35W On-state resistance: 13Ω Gate-source voltage: ±20V Case: SOT323 Application: automotive industry |
на замовлення 2875 шт: термін постачання 21-30 дні (днів) |
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PJC7439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -250mA Gate charge: 1.1nC Power dissipation: 0.35W On-state resistance: 13Ω Gate-source voltage: ±20V Case: SOT323 Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 2875 шт: термін постачання 14-21 дні (днів) |
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PJC7476_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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PJC7476_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| PJA3407_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2915 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.61 грн |
| 15+ | 20.23 грн |
| 100+ | 12.11 грн |
| 500+ | 8.99 грн |
| 1000+ | 8.04 грн |
| 3000+ | 6.81 грн |
| 6000+ | 6.24 грн |
| PJA3407_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2915 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.01 грн |
| 25+ | 16.24 грн |
| 100+ | 10.09 грн |
| 500+ | 7.49 грн |
| 1000+ | 6.70 грн |
| PJA3409_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3409-R1 SMD P channel transistors
PJA3409-R1 SMD P channel transistors
на замовлення 2380 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.32 грн |
| 202+ | 5.53 грн |
| 554+ | 5.24 грн |
| PJA3411-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJA3411-AU-R1 SMD P channel transistors
PJA3411-AU-R1 SMD P channel transistors
на замовлення 2500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.49 грн |
| 224+ | 4.98 грн |
| 616+ | 4.71 грн |
| PJA3412-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJA3412-AU-R1 SMD N channel transistors
PJA3412-AU-R1 SMD N channel transistors
на замовлення 2136 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.92 грн |
| 206+ | 5.42 грн |
| 566+ | 5.13 грн |
| 9000+ | 5.12 грн |
| PJA3412_R1_00501 |
Виробник: PanJit Semiconductor
PJA3412-R1 SMD N channel transistors
PJA3412-R1 SMD N channel transistors
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.60 грн |
| 313+ | 3.58 грн |
| 859+ | 3.38 грн |
| PJA3413_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3413-R1 SMD P channel transistors
PJA3413-R1 SMD P channel transistors
на замовлення 2370 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.90 грн |
| 320+ | 3.49 грн |
| 880+ | 3.30 грн |
| PJA3415A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJA3415A-AU-R1 SMD P channel transistors
PJA3415A-AU-R1 SMD P channel transistors
на замовлення 2840 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.52 грн |
| 151+ | 7.47 грн |
| 413+ | 7.00 грн |
| PJA3416AE_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 32A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 32A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2460 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 30.56 грн |
| 16+ | 18.47 грн |
| 100+ | 11.15 грн |
| 500+ | 8.06 грн |
| 1000+ | 7.05 грн |
| 3000+ | 5.71 грн |
| 6000+ | 5.35 грн |
| PJA3416AE_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 32A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 32A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2460 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.47 грн |
| 27+ | 14.82 грн |
| 100+ | 9.29 грн |
| 500+ | 6.72 грн |
| 1000+ | 5.87 грн |
| PJA3428_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3428-R1 SMD N channel transistors
PJA3428-R1 SMD N channel transistors
на замовлення 7390 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.60 грн |
| 296+ | 3.77 грн |
| 814+ | 3.57 грн |
| PJA3430-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.6A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.6A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3430_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2565 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 20.37 грн |
| 25+ | 11.89 грн |
| 100+ | 7.13 грн |
| 500+ | 5.15 грн |
| 1000+ | 4.47 грн |
| 3000+ | 4.37 грн |
| PJA3430_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
на замовлення 2565 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 16.98 грн |
| 42+ | 9.54 грн |
| 100+ | 5.94 грн |
| 500+ | 4.30 грн |
| 1000+ | 3.73 грн |
| PJA3432-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
на замовлення 1770 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.13 грн |
| 44+ | 9.14 грн |
| 100+ | 5.74 грн |
| 500+ | 4.19 грн |
| PJA3432-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1770 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.35 грн |
| 26+ | 11.39 грн |
| 100+ | 6.89 грн |
| 500+ | 5.03 грн |
| PJA3433-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
на замовлення 1455 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.13 грн |
| 44+ | 9.14 грн |
| 100+ | 5.75 грн |
| 500+ | 4.65 грн |
| PJA3433-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1455 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.35 грн |
| 26+ | 11.39 грн |
| 100+ | 6.90 грн |
| 500+ | 5.58 грн |
| PJA3433_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 7014 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.41 грн |
| 23+ | 13.36 грн |
| 100+ | 7.77 грн |
| 500+ | 5.65 грн |
| 1000+ | 5.05 грн |
| PJA3433_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
на замовлення 7014 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.67 грн |
| 37+ | 10.72 грн |
| 100+ | 6.47 грн |
| 500+ | 4.71 грн |
| 1000+ | 4.21 грн |
| PJA3434-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3434_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 3770 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.39 грн |
| 24+ | 12.38 грн |
| 100+ | 7.57 грн |
| 500+ | 5.52 грн |
| 1000+ | 4.82 грн |
| 3000+ | 3.97 грн |
| PJA3434_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
Kind of channel: enhancement
на замовлення 3770 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 17.83 грн |
| 40+ | 9.93 грн |
| 100+ | 6.31 грн |
| 500+ | 4.60 грн |
| 1000+ | 4.02 грн |
| 3000+ | 3.31 грн |
| PJA3435_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -0.5A
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -0.5A
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 5960 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.48 грн |
| 20+ | 15.22 грн |
| 100+ | 9.48 грн |
| 500+ | 7.10 грн |
| 1000+ | 6.29 грн |
| 3000+ | 5.23 грн |
| 6000+ | 4.66 грн |
| PJA3435_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -0.5A
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -0.5A
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
Kind of channel: enhancement
на замовлення 5960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.07 грн |
| 33+ | 12.22 грн |
| 100+ | 7.90 грн |
| 500+ | 5.92 грн |
| 1000+ | 5.24 грн |
| 3000+ | 4.36 грн |
| PJA3436-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Application: automotive industry
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.22 грн |
| 34+ | 11.74 грн |
| 100+ | 7.28 грн |
| 500+ | 5.34 грн |
| 1000+ | 4.74 грн |
| 3000+ | 3.96 грн |
| PJA3436-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Application: automotive industry
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Application: automotive industry
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 25.47 грн |
| 21+ | 14.64 грн |
| 100+ | 8.74 грн |
| 500+ | 6.41 грн |
| 1000+ | 5.68 грн |
| 3000+ | 4.76 грн |
| 6000+ | 4.54 грн |
| PJA3436_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Gate-source voltage: 10V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Gate-source voltage: 10V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3438-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.77 грн |
| 28+ | 14.35 грн |
| 100+ | 8.99 грн |
| 500+ | 6.53 грн |
| PJA3438-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.52 грн |
| 17+ | 17.88 грн |
| 100+ | 10.78 грн |
| 500+ | 7.84 грн |
| 1000+ | 6.86 грн |
| 3000+ | 5.57 грн |
| 6000+ | 4.90 грн |
| PJA3438_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Gate-source voltage: 8V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Gate-source voltage: 8V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3439-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -300mA
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -300mA
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3439-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -300mA
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -300mA
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJA3439_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -600mA
Gate-source voltage: 8V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -600mA
Gate-source voltage: 8V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3440-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
PJA3440-AU-R1 SMD N channel transistors
PJA3440-AU-R1 SMD N channel transistors
на замовлення 6000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.39 грн |
| 132+ | 8.42 грн |
| 363+ | 8.04 грн |
| PJA3441-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
PJA3441-AU-R1 SMD P channel transistors
PJA3441-AU-R1 SMD P channel transistors
на замовлення 2725 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.78 грн |
| 155+ | 7.19 грн |
| 425+ | 6.81 грн |
| PJA3441_R1_00501 |
Виробник: PanJit Semiconductor
PJA3441-R1 SMD P channel transistors
PJA3441-R1 SMD P channel transistors
на замовлення 1863 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 34.43 грн |
| 182+ | 6.15 грн |
| 500+ | 5.77 грн |
| PJA3460-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1013 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 22.92 грн |
| 100+ | 15.37 грн |
| 149+ | 6.23 грн |
| 411+ | 5.91 грн |
| PJA3460-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 1013 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.50 грн |
| 100+ | 19.15 грн |
| 149+ | 7.47 грн |
| 411+ | 7.09 грн |
| 6000+ | 6.90 грн |
| PJA3460_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 3485 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.52 грн |
| 17+ | 17.48 грн |
| 100+ | 9.74 грн |
| 152+ | 7.38 грн |
| 419+ | 6.90 грн |
| 3000+ | 6.62 грн |
| PJA3460_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3485 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.77 грн |
| 29+ | 14.03 грн |
| 100+ | 8.12 грн |
| 152+ | 6.15 грн |
| 419+ | 5.75 грн |
| 3000+ | 5.52 грн |
| PJA3463_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
PJA3463-R1 SMD P channel transistors
PJA3463-R1 SMD P channel transistors
на замовлення 845 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.24 грн |
| 125+ | 8.99 грн |
| 342+ | 8.51 грн |
| PJA3471_R1_00501 |
Виробник: PanJit Semiconductor
PJA3471-R1 SMD P channel transistors
PJA3471-R1 SMD P channel transistors
на замовлення 12065 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.35 грн |
| 129+ | 8.70 грн |
| 354+ | 8.23 грн |
| PJB120N04S-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJB120N04V-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 166A
Case: TO220AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 166A
Case: TO220AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJB240N04S7-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJB240N04V7-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJC138K-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
PJC138K-AU-R1 SMD N channel transistors
PJC138K-AU-R1 SMD N channel transistors
на замовлення 2059 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.06 грн |
| 280+ | 4.00 грн |
| 768+ | 3.78 грн |
| PJC7400_R1_00001 |
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Виробник: PanJit Semiconductor
PJC7400-R1 SMD N channel transistors
PJC7400-R1 SMD N channel transistors
на замовлення 5455 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.68 грн |
| 171+ | 6.53 грн |
| 470+ | 6.15 грн |
| PJC7401_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
PJC7401-R1 SMD P channel transistors
PJC7401-R1 SMD P channel transistors
на замовлення 205 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.56 грн |
| 166+ | 6.72 грн |
| 453+ | 6.43 грн |
| PJC7404_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
на замовлення 5990 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.61 грн |
| 15+ | 19.84 грн |
| 100+ | 12.20 грн |
| 500+ | 8.89 грн |
| 1000+ | 7.85 грн |
| 3000+ | 6.34 грн |
| 6000+ | 5.68 грн |
| PJC7404_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
на замовлення 5990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.01 грн |
| 25+ | 15.92 грн |
| 100+ | 10.17 грн |
| 500+ | 7.41 грн |
| 1000+ | 6.54 грн |
| 3000+ | 5.28 грн |
| PJC7407_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
на замовлення 7545 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.48 грн |
| 18+ | 17.09 грн |
| 100+ | 9.65 грн |
| 500+ | 7.28 грн |
| 1000+ | 6.62 грн |
| 3000+ | 5.86 грн |
| 6000+ | 5.58 грн |
| PJC7407_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
на замовлення 7545 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.07 грн |
| 29+ | 13.72 грн |
| 100+ | 8.04 грн |
| 500+ | 6.07 грн |
| 1000+ | 5.52 грн |
| 3000+ | 4.89 грн |
| 6000+ | 4.65 грн |
| PJC7428_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.9nC
On-state resistance: 4Ω
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.9nC
On-state resistance: 4Ω
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.34 грн |
| 28+ | 10.61 грн |
| 100+ | 6.45 грн |
| 250+ | 5.43 грн |
| 500+ | 4.79 грн |
| PJC7428_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.9nC
On-state resistance: 4Ω
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.9nC
On-state resistance: 4Ω
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of package: reel; tape
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.28 грн |
| 47+ | 8.51 грн |
| 100+ | 5.38 грн |
| 250+ | 4.52 грн |
| 500+ | 3.99 грн |
| PJC7439-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -250mA
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -250mA
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
на замовлення 2875 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 16.98 грн |
| 42+ | 9.46 грн |
| 100+ | 5.83 грн |
| 319+ | 2.91 грн |
| 875+ | 2.75 грн |
| PJC7439-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -250mA
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -250mA
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 2875 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 20.37 грн |
| 25+ | 11.79 грн |
| 100+ | 7.00 грн |
| 319+ | 3.49 грн |
| 875+ | 3.30 грн |
| 6000+ | 3.23 грн |
| 9000+ | 3.17 грн |
| PJC7476_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.61 грн |
| 13+ | 24.16 грн |
| 100+ | 8.23 грн |
| 250+ | 7.38 грн |
| 500+ | 6.90 грн |
| PJC7476_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.01 грн |
| 21+ | 19.39 грн |
| 100+ | 6.86 грн |
| 250+ | 6.15 грн |
| 500+ | 5.75 грн |


