Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1081) > Сторінка 15 з 19
| Фото | Назва | Виробник | Інформація |
Доступність |
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PJMF280N65E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 35.7W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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PJMF360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 30W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJMF390N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 29.5W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 7-14 дні (днів) |
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PJMF390N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 29.5W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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PJMF580N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 28W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJMF990N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 22.5W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJMH040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 71A Pulsed drain current: 212A Power dissipation: 200W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 144nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMH060N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 58.3A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMH074N60FRCH_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJMH074N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Pulsed drain current: 117A Power dissipation: 446W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 74mΩ Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJMH080N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMH099N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 39A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJMH120N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJMH125N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3 Case: TO247AD-3 Mounting: THT Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: 30V Drain current: 30A Drain-source voltage: 600V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMH190N60E1_T0_00601 | PanJit Semiconductor |
PJMH190N60E1-T0 THT N channel transistors |
на замовлення 10 шт: термін постачання 7-14 дні (днів) |
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| PJMH190N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.7A Case: TO247AD-3 Gate-source voltage: 20V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMK040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 71A Case: TO247AD-3 Gate-source voltage: 40V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMK074N60FRCH_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Case: TO247AD-3 Gate-source voltage: 74V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMP060N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 58.3A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMP080N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMP099N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJMP120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 7-14 дні (днів) |
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PJMP120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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| PJMP125N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB Polarisation: unipolar Drain current: 30A Gate-source voltage: 30V Case: TO220AB Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMP130N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 29A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMP190N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.7A Case: TO220AB Gate-source voltage: 20V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJMP210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 150W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJMP360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJMP390N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJMP990N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 47.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJP125N06SA-AU_T0_006A1 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 215A Case: TO220AB Gate-source voltage: 20V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ4435EP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 45A Case: DFN3333-8 Gate-source voltage: 25V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ4435EP_R2_00201 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -41A Pulsed drain current: -138A Power dissipation: 13.5W Case: DFN3333-8 Gate-source voltage: ±25V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5423_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 60A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5431E-AU_R2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 86A; DFN5060-8 Application: automotive industry Case: DFN5060-8 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: 25V Drain-source voltage: 30V Drain current: 86A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5522-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 141A; Idm: 564A; 37.5W Case: DFN5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 43nC On-state resistance: 2mΩ Power dissipation: 37.5W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 141A Pulsed drain current: 564A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5522S6-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 108A; DFN5060-8 Case: DFN5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: 20V Drain-source voltage: 30V Drain current: 108A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJQ5544-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 41nC On-state resistance: 4.3mΩ Gate-source voltage: ±20V Power dissipation: 100W Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 520A Polarisation: unipolar Application: automotive industry Kind of package: reel; tape |
на замовлення 1952 шт: термін постачання 21-30 дні (днів) |
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PJQ5544-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 41nC On-state resistance: 4.3mΩ Gate-source voltage: ±20V Power dissipation: 100W Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 520A Polarisation: unipolar Application: automotive industry Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1952 шт: термін постачання 7-14 дні (днів) |
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| PJQ5544S6-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8 Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: 20V Drain-source voltage: 40V Drain current: 101A Polarisation: unipolar Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5544S6V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8 Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: 20V Drain-source voltage: 40V Drain current: 90A Polarisation: unipolar Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJQ5544V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 94W; DFN5060-8 Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 34nC On-state resistance: 4.6mΩ Gate-source voltage: ±20V Power dissipation: 94W Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Polarisation: unipolar Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJQ5808-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8 Case: DFN5060-8 Kind of channel: enhancement Type of transistor: P-MOSFET x2 Mounting: SMD Polarisation: unipolar Drain current: -31A Drain-source voltage: -30V Gate-source voltage: 25V Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJS6403_S1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -46A; 2W; SOT23-6 Case: SOT23-6 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain current: -6.4A Pulsed drain current: -46A Drain-source voltage: -30V Gate charge: 7.8nC On-state resistance: 46mΩ Power dissipation: 2W Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJS6421_S1_00001 | PanJit Semiconductor |
PJS6421-S1 SMD P channel transistors |
на замовлення 2931 шт: термін постачання 7-14 дні (днів) |
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| PJS6601_S1_00001 | PanJit Semiconductor | PJS6601-S1 Multi channel transistors |
на замовлення 2600 шт: термін постачання 7-14 дні (днів) |
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| PJSD03TS-AU_R1_000A1 | PanJit Semiconductor |
PJSD03TS-AU-R1 Unidirectional TVS SMD diodes |
на замовлення 2095 шт: термін постачання 7-14 дні (днів) |
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| PJSD05TS-AU_R1_000A1 | PanJit Semiconductor |
PJSD05TS-AU-R1 Unidirectional TVS SMD diodes |
на замовлення 4658 шт: термін постачання 7-14 дні (днів) |
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| PJSD05W_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; 7.2V; 0.35kW; SOD323 Type of diode: TVS Breakdown voltage: 7.2V Case: SOD323 Mounting: SMD Leakage current: 10µA Peak pulse power dissipation: 0.35kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD36CW_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; 29.4V; 0.35kW; SOD323 Type of diode: TVS Breakdown voltage: 29.4V Peak pulse power dissipation: 0.35kW Mounting: SMD Case: SOD323 Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD36W_R1_00001 | PanJit Semiconductor | PJSD36W-R1 Unidirectional TVS SMD diodes |
на замовлення 4635 шт: термін постачання 7-14 дні (днів) |
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| PJSOT24C-05-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29.4V; 0.35kW; unidirectional; SOT23 Type of diode: TVS Breakdown voltage: 29.4V Peak pulse power dissipation: 0.35kW Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Leakage current: 1µA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJT138K-AU_R1_000A1 | PanJit Semiconductor | PJT138K-AU-R1 Multi channel transistors |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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PJT7600_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Case: SOT363 Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 1.6/2.2nC Power dissipation: 0.35W On-state resistance: 400/600mΩ Drain current: 1A/-700mA Gate-source voltage: ±8V Drain-source voltage: 20/-20V кількість в упаковці: 1 шт |
на замовлення 2685 шт: термін постачання 7-14 дні (днів) |
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PJT7600_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Case: SOT363 Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 1.6/2.2nC Power dissipation: 0.35W On-state resistance: 400/600mΩ Drain current: 1A/-700mA Gate-source voltage: ±8V Drain-source voltage: 20/-20V |
на замовлення 2685 шт: термін постачання 21-30 дні (днів) |
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| PJT7603_R1_00001 | PanJit Semiconductor |
PJT7603-R1 Multi channel transistors |
на замовлення 2880 шт: термін постачання 7-14 дні (днів) |
|
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| PJT7800_R1_00001 | PanJit Semiconductor |
PJT7800-R1 Multi channel transistors |
на замовлення 5968 шт: термін постачання 7-14 дні (днів) |
|
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| PJT7801_R1_00001 | PanJit Semiconductor |
PJT7801-R1 Multi channel transistors |
на замовлення 2845 шт: термін постачання 7-14 дні (днів) |
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| PJT7807_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 Mounting: SMD Case: SOT363 Drain-source voltage: -60V Drain current: -0.25A Gate-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJT7808_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -250mA Gate-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. |
| PJMF280N65E1_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 46 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 176.47 грн |
| 10+ | 122.49 грн |
| PJMF360N60EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMF390N65EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 29.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 29.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.14 грн |
| 10+ | 87.66 грн |
| 50+ | 78.46 грн |
| 100+ | 76.47 грн |
| 250+ | 71.51 грн |
| 500+ | 69.52 грн |
| 1000+ | 66.54 грн |
| PJMF390N65EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 29.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 29.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 104.28 грн |
| 10+ | 70.35 грн |
| 50+ | 65.38 грн |
| 100+ | 63.73 грн |
| PJMF580N60E1_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMF990N65EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH040N60EC_T0_00201 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH060N65FR2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH074N60FRCH_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH074N60FRC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH080N65FR2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH099N60EC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH120N60EC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
товару немає в наявності
В кошику
од. на суму грн.
| PJMH125N60FRC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Case: TO247AD-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 30V
Drain current: 30A
Drain-source voltage: 600V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Case: TO247AD-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 30V
Drain current: 30A
Drain-source voltage: 600V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH190N60E1_T0_00601 |
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Виробник: PanJit Semiconductor
PJMH190N60E1-T0 THT N channel transistors
PJMH190N60E1-T0 THT N channel transistors
на замовлення 10 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 416.05 грн |
| 9+ | 138.05 грн |
| 24+ | 130.10 грн |
| PJMH190N65FR2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMK040N60EC_T0_00201 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMK074N60FRCH_T0_00201 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP060N65FR2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
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| PJMP080N65FR2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP099N60EC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP120N60EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 334.76 грн |
| 10+ | 288.77 грн |
| 50+ | 233.39 грн |
| 100+ | 209.55 грн |
| 250+ | 193.66 грн |
| 500+ | 185.72 грн |
| 1000+ | 166.85 грн |
| PJMP120N60EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 278.97 грн |
| 10+ | 231.73 грн |
| 50+ | 194.49 грн |
| PJMP125N60FRC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
| PJMP130N65EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP190N65FR2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP210N65EC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
товару немає в наявності
В кошику
од. на суму грн.
| PJMP360N60EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP390N65EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP990N65EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJP125N06SA-AU_T0_006A1 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4435EP-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45A
Case: DFN3333-8
Gate-source voltage: 25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45A
Case: DFN3333-8
Gate-source voltage: 25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4435EP_R2_00201 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5423_R2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5431E-AU_R2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; DFN5060-8
Application: automotive industry
Case: DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 25V
Drain-source voltage: 30V
Drain current: 86A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; DFN5060-8
Application: automotive industry
Case: DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 25V
Drain-source voltage: 30V
Drain current: 86A
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5522-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 141A; Idm: 564A; 37.5W
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 2mΩ
Power dissipation: 37.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 141A
Pulsed drain current: 564A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 141A; Idm: 564A; 37.5W
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 2mΩ
Power dissipation: 37.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 141A
Pulsed drain current: 564A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5522S6-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 108A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 108A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5544-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 41nC
On-state resistance: 4.3mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 41nC
On-state resistance: 4.3mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
на замовлення 1952 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 109.63 грн |
| 10+ | 65.22 грн |
| 100+ | 50.98 грн |
| 250+ | 42.79 грн |
| 500+ | 38.57 грн |
| 1000+ | 35.67 грн |
| PJQ5544-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 41nC
On-state resistance: 4.3mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 41nC
On-state resistance: 4.3mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1952 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.55 грн |
| 10+ | 81.27 грн |
| 100+ | 61.18 грн |
| 250+ | 51.35 грн |
| 500+ | 46.28 грн |
| 1000+ | 42.80 грн |
| 3000+ | 40.92 грн |
| PJQ5544S6-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 101A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 101A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5544S6V-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 90A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 90A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
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| PJQ5544V-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 94W; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 34nC
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Power dissipation: 94W
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 94W; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 34nC
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Power dissipation: 94W
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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| PJQ5808-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain current: -31A
Drain-source voltage: -30V
Gate-source voltage: 25V
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain current: -31A
Drain-source voltage: -30V
Gate-source voltage: 25V
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
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| PJS6403_S1_00001 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -46A; 2W; SOT23-6
Case: SOT23-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -6.4A
Pulsed drain current: -46A
Drain-source voltage: -30V
Gate charge: 7.8nC
On-state resistance: 46mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -46A; 2W; SOT23-6
Case: SOT23-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -6.4A
Pulsed drain current: -46A
Drain-source voltage: -30V
Gate charge: 7.8nC
On-state resistance: 46mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Kind of package: reel; tape
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| PJS6421_S1_00001 |
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Виробник: PanJit Semiconductor
PJS6421-S1 SMD P channel transistors
PJS6421-S1 SMD P channel transistors
на замовлення 2931 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.97 грн |
| 117+ | 10.13 грн |
| 320+ | 9.53 грн |
| PJS6601_S1_00001 |
Виробник: PanJit Semiconductor
PJS6601-S1 Multi channel transistors
PJS6601-S1 Multi channel transistors
на замовлення 2600 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.54 грн |
| 131+ | 9.04 грн |
| 360+ | 8.54 грн |
| PJSD03TS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJSD03TS-AU-R1 Unidirectional TVS SMD diodes
PJSD03TS-AU-R1 Unidirectional TVS SMD diodes
на замовлення 2095 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 15.40 грн |
| 217+ | 5.42 грн |
| 597+ | 5.13 грн |
| PJSD05TS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJSD05TS-AU-R1 Unidirectional TVS SMD diodes
PJSD05TS-AU-R1 Unidirectional TVS SMD diodes
на замовлення 4658 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.82 грн |
| 178+ | 6.65 грн |
| 489+ | 6.26 грн |
| PJSD05W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.2V; 0.35kW; SOD323
Type of diode: TVS
Breakdown voltage: 7.2V
Case: SOD323
Mounting: SMD
Leakage current: 10µA
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 7.2V; 0.35kW; SOD323
Type of diode: TVS
Breakdown voltage: 7.2V
Case: SOD323
Mounting: SMD
Leakage current: 10µA
Peak pulse power dissipation: 0.35kW
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| PJSD36CW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 0.35kW; SOD323
Type of diode: TVS
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Leakage current: 1µA
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 0.35kW; SOD323
Type of diode: TVS
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Leakage current: 1µA
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од. на суму грн.
| PJSD36W_R1_00001 |
Виробник: PanJit Semiconductor
PJSD36W-R1 Unidirectional TVS SMD diodes
PJSD36W-R1 Unidirectional TVS SMD diodes
на замовлення 4635 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.67 грн |
| 189+ | 6.26 грн |
| 518+ | 5.86 грн |
| PJSOT24C-05-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 0.35kW; unidirectional; SOT23
Type of diode: TVS
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 0.35kW; unidirectional; SOT23
Type of diode: TVS
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Application: automotive industry
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од. на суму грн.
| PJT138K-AU_R1_000A1 |
Виробник: PanJit Semiconductor
PJT138K-AU-R1 Multi channel transistors
PJT138K-AU-R1 Multi channel transistors
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.40 грн |
| 204+ | 5.79 грн |
| 559+ | 5.47 грн |
| PJT7600_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
кількість в упаковці: 1 шт
на замовлення 2685 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.06 грн |
| 11+ | 28.57 грн |
| 100+ | 17.58 грн |
| 500+ | 13.31 грн |
| 1000+ | 12.02 грн |
| 3000+ | 10.23 грн |
| 6000+ | 9.34 грн |
| PJT7600_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
на замовлення 2685 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.22 грн |
| 19+ | 22.92 грн |
| 100+ | 14.65 грн |
| 500+ | 11.09 грн |
| 1000+ | 10.01 грн |
| PJT7603_R1_00001 |
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Виробник: PanJit Semiconductor
PJT7603-R1 Multi channel transistors
PJT7603-R1 Multi channel transistors
на замовлення 2880 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.91 грн |
| 204+ | 5.79 грн |
| 559+ | 5.47 грн |
| PJT7800_R1_00001 |
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Виробник: PanJit Semiconductor
PJT7800-R1 Multi channel transistors
PJT7800-R1 Multi channel transistors
на замовлення 5968 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.23 грн |
| 173+ | 6.85 грн |
| 475+ | 6.46 грн |
| PJT7801_R1_00001 |
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Виробник: PanJit Semiconductor
PJT7801-R1 Multi channel transistors
PJT7801-R1 Multi channel transistors
на замовлення 2845 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.06 грн |
| 169+ | 6.95 грн |
| 463+ | 6.65 грн |
| PJT7807_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT363
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT363
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
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од. на суму грн.
| PJT7808_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Gate-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.






