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P6SMBJ58CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ58CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ6.0A_R1_00001 P6SMBJ6.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 520 шт:
термін постачання 14-30 дні (днів)
20+22.54 грн
30+13.98 грн
100+9.79 грн
500+7.53 грн
Мінімальне замовлення: 20
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P6SMBJ6.0CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ6.5A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ6.5CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ64A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
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P6SMBJ64A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ7.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.6V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ7.5A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ7.5CA_R1_00001 P6SMBJ7.5CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 430 шт:
термін постачання 14-30 дні (днів)
18+25.24 грн
27+15.90 грн
100+10.80 грн
Мінімальне замовлення: 18
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P6SMBJ70A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷86V; 5.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 5.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ85CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷104V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ90A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ90CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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PBHV8050SA_R1_00501 PanJit Semiconductor Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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PBHV8110DA-AU_R1_000A1 PBHV8110DA-AU_R1_000A1 PanJit Semiconductor PBHV8110DA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
28+16.23 грн
43+10.04 грн
Мінімальне замовлення: 28
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PBHV8110DW_R2_00701 PanJit Semiconductor Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: NPN
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Kind of package: reel; tape
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PBHV9110DW_R2_00701 PanJit Semiconductor Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
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PCDF0465G1_T0_00601 PanJit Semiconductor PCDF0465G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Power dissipation: 53.6W
Kind of package: tube
Technology: SiC
Leakage current: 40µA
Max. load current: 20A
Max. forward impulse current: 360A
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PCDF0465G3_T0_00601 PanJit Semiconductor Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.5V
Power dissipation: 53.6W
Kind of package: Ammo Pack
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PCDF0665G1_T0_00601 PanJit Semiconductor PCDF0665G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Kind of package: tube
Case: ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Leakage current: 50µA
Load current: 6A
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Max. off-state voltage: 650V
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PCDF0665G3_T0_00601 PanJit Semiconductor Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Kind of package: Ammo Pack
Case: ITO220AC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 6A
Max. forward voltage: 1.5V
Power dissipation: 70.8W
Max. off-state voltage: 650V
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PCDF0865G1_T0_00601 PanJit Semiconductor PCDF0865G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
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PCDH20120CCG1_T0_00601 PCDH20120CCG1_T0_00601 PanJit Semiconductor PCDH20120CCG1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 52A
Max. forward impulse current: 720A
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 167.8W
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PCDH20120CCGB_T0_00601 PanJit Semiconductor Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 72A
Max. forward impulse current: 0.92kA
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 1.9V
Power dissipation: 209W
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PCDH2065CCG1_T0_00601 PCDH2065CCG1_T0_00601 PanJit Semiconductor PCDH2065CCG1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
2+359.68 грн
5+301.34 грн
30+266.19 грн
Мінімальне замовлення: 2
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PCDH2065CCGB_T0_00601 PanJit Semiconductor PCDH2065CCGB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
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PCDH2065CCGC_T0_00601 PanJit Semiconductor PCDH2065CCGC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
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PDZ10B-AU_R1_000A1 PDZ10B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Application: automotive industry
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PDZ10B_R1_00001 PDZ10B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
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PDZ33B-AU_R1_000A1 PDZ33B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; SOD323; reel,tape; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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PDZ33B_R1_00001 PDZ33B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; SOD323; reel,tape; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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PDZ5.1B-AU_R1_000A1 PDZ5.1B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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PDZ5.1B_R1_00001 PDZ5.1B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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PE1605C4E6-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
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PE1605C4E6-AU_S1_000A1 PanJit Semiconductor PE1605C4E6-AU.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
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PE1605C4E6_R1_00001 PanJit Semiconductor PE1605C4E6.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
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PE1805C4A6_R1_00001 PE1805C4A6_R1_00001 PanJit Semiconductor PE1805C4A6_R1_00001.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT23-6; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.8pF
Application: Ethernet; USB
Kind of package: reel; tape
на замовлення 8085 шт:
термін постачання 14-30 дні (днів)
72+6.31 грн
79+5.36 грн
100+4.99 грн
250+4.56 грн
500+4.34 грн
1000+4.29 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
PE1805C4C6_R1_00001 PE1805C4C6_R1_00001 PanJit Semiconductor PE1805C4C6.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT363; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.8pF
Application: Ethernet; USB
Kind of package: reel; tape
на замовлення 2965 шт:
термін постачання 14-30 дні (днів)
34+13.52 грн
55+7.70 грн
100+5.39 грн
500+4.41 грн
1000+4.10 грн
Мінімальне замовлення: 34
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PE3324C2A_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 29.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Max. forward impulse current: 1A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 29.5V
Peak pulse power dissipation: 0.35kW
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PE4105C1ES_R1_00001 PE4105C1ES_R1_00001 PanJit Semiconductor PE4105C1ES Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; ESD; SOD523; Ch: 1
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
100+4.51 грн
143+2.93 грн
204+2.06 грн
500+1.76 грн
1000+1.67 грн
Мінімальне замовлення: 100
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PE4105C2A_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
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PE4105C3C6_R1_00001 PanJit Semiconductor PE4105C3C6.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3
Mounting: SMD
Case: SOT363
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 3
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6V
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PE4136C2A-AU_R1_000A1 PanJit Semiconductor PE4136C2A-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 0.8µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
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PE4136C2A_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 1µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
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PE4205M1Q_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 1
Case: DFN1006-2
Capacitance: 0.25nF
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PE4715L1Q-AU_R1_002A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Application: automotive industry
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
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PE4715L1Q_R1_00201 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
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PE4724L1Q-AU_R1_002A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Application: automotive industry
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PE4724L1Q_R1_00201 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
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PE4728L1Q-AU_R1_002A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Application: automotive industry
Capacitance: 0.23nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 27.5A
Max. off-state voltage: 28V
Breakdown voltage: 30V
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PEC11SD03M1Q_R1_00501 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
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PEC1305S1Q_R1_00001 PanJit Semiconductor PEC1305S1Q.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; bidirectional; DFN0603-2; Ch: 1
Mounting: SMD
Case: DFN0603-2
Type of diode: TVS
Capacitance: 0.25pF
Leakage current: 50nA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
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PEC1605M1Q-AU_R1_005A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Application: automotive industry
Semiconductor structure: bidirectional
Case: DFN1006-2
Type of diode: TVS
Leakage current: 75nA
Number of channels: 1
Max. forward impulse current: 2A
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
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PEC1605M1Q_R1_00001 PEC1605M1Q_R1_00001 PanJit Semiconductor PEC1605M1Q.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
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PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU_R1_000A1 PanJit Semiconductor PEC3324C2A-AU Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Application: automotive industry
Semiconductor structure: bidirectional; double
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOT23
Type of diode: TVS array
Capacitance: 30pF
Leakage current: 50nA
Max. forward impulse current: 7A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 26.2...30.3V
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PJ30072S6_R1_00301 PanJit Semiconductor PJ30072.pdf Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
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PJA3400_R1_00001 PJA3400_R1_00001 PanJit Semiconductor PJA3400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2671 шт:
термін постачання 14-30 дні (днів)
19+24.34 грн
31+13.90 грн
100+8.62 грн
500+6.28 грн
1000+5.44 грн
Мінімальне замовлення: 19
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PJA3407_R1_00001 PJA3407_R1_00001 PanJit Semiconductor PJA3407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2364 шт:
термін постачання 14-30 дні (днів)
16+29.75 грн
25+17.24 грн
100+10.71 грн
500+7.95 грн
1000+7.12 грн
Мінімальне замовлення: 16
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P6SMBJ58CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ58CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ6.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ6.0A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 520 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.54 грн
30+13.98 грн
100+9.79 грн
500+7.53 грн
Мінімальне замовлення: 20
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P6SMBJ6.0CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ6.5A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ6.5CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ64A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
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P6SMBJ64A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ7.0A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.6V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ7.5A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ7.5CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.5CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 430 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.24 грн
27+15.90 грн
100+10.80 грн
Мінімальне замовлення: 18
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P6SMBJ70A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷86V; 5.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 5.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ85CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷104V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ90A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ90CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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PBHV8050SA_R1_00501
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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PBHV8110DA-AU_R1_000A1 PBHV8110DA.pdf
PBHV8110DA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.23 грн
43+10.04 грн
Мінімальне замовлення: 28
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PBHV8110DW_R2_00701
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: NPN
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Kind of package: reel; tape
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PBHV9110DW_R2_00701
Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
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PCDF0465G1_T0_00601 PCDF0465G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Power dissipation: 53.6W
Kind of package: tube
Technology: SiC
Leakage current: 40µA
Max. load current: 20A
Max. forward impulse current: 360A
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PCDF0465G3_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.5V
Power dissipation: 53.6W
Kind of package: Ammo Pack
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PCDF0665G1_T0_00601 PCDF0665G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Kind of package: tube
Case: ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Leakage current: 50µA
Load current: 6A
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Max. off-state voltage: 650V
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PCDF0665G3_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Kind of package: Ammo Pack
Case: ITO220AC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 6A
Max. forward voltage: 1.5V
Power dissipation: 70.8W
Max. off-state voltage: 650V
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PCDF0865G1_T0_00601 PCDF0865G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
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PCDH20120CCG1_T0_00601 PCDH20120CCG1.pdf
PCDH20120CCG1_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 52A
Max. forward impulse current: 720A
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 167.8W
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PCDH20120CCGB_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 72A
Max. forward impulse current: 0.92kA
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 1.9V
Power dissipation: 209W
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PCDH2065CCG1_T0_00601 PCDH2065CCG1.pdf
PCDH2065CCG1_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+359.68 грн
5+301.34 грн
30+266.19 грн
Мінімальне замовлення: 2
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PCDH2065CCGB_T0_00601 PCDH2065CCGB.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
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PCDH2065CCGC_T0_00601 PCDH2065CCGC.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
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PDZ10B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ10B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Application: automotive industry
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PDZ10B_R1_00001 PDZ4.7B_SER.pdf
PDZ10B_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
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PDZ33B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ33B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; SOD323; reel,tape; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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PDZ33B_R1_00001 PDZ4.7B_SER.pdf
PDZ33B_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; SOD323; reel,tape; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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PDZ5.1B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ5.1B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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PDZ5.1B_R1_00001 PDZ4.7B_SER.pdf
PDZ5.1B_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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PE1605C4E6-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
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PE1605C4E6-AU_S1_000A1 PE1605C4E6-AU.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
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PE1605C4E6_R1_00001 PE1605C4E6.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
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PE1805C4A6_R1_00001 PE1805C4A6_R1_00001.pdf
PE1805C4A6_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT23-6; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.8pF
Application: Ethernet; USB
Kind of package: reel; tape
на замовлення 8085 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.31 грн
79+5.36 грн
100+4.99 грн
250+4.56 грн
500+4.34 грн
1000+4.29 грн
Мінімальне замовлення: 72
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PE1805C4C6_R1_00001 PE1805C4C6.pdf
PE1805C4C6_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT363; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.8pF
Application: Ethernet; USB
Kind of package: reel; tape
на замовлення 2965 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.52 грн
55+7.70 грн
100+5.39 грн
500+4.41 грн
1000+4.10 грн
Мінімальне замовлення: 34
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PE3324C2A_R1_00501
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Max. forward impulse current: 1A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 29.5V
Peak pulse power dissipation: 0.35kW
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PE4105C1ES_R1_00001 PE4105C1ES
PE4105C1ES_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; ESD; SOD523; Ch: 1
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
100+4.51 грн
143+2.93 грн
204+2.06 грн
500+1.76 грн
1000+1.67 грн
Мінімальне замовлення: 100
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PE4105C2A_R1_00501
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
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PE4105C3C6_R1_00001 PE4105C3C6.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3
Mounting: SMD
Case: SOT363
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 3
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6V
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PE4136C2A-AU_R1_000A1 PE4136C2A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 0.8µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
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PE4136C2A_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 1µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
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PE4205M1Q_R1_00501
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 1
Case: DFN1006-2
Capacitance: 0.25nF
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PE4715L1Q-AU_R1_002A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Application: automotive industry
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
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PE4715L1Q_R1_00201
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
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PE4724L1Q-AU_R1_002A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Application: automotive industry
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PE4724L1Q_R1_00201
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
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PE4728L1Q-AU_R1_002A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Application: automotive industry
Capacitance: 0.23nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 27.5A
Max. off-state voltage: 28V
Breakdown voltage: 30V
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PEC11SD03M1Q_R1_00501
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
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PEC1305S1Q_R1_00001 PEC1305S1Q.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; bidirectional; DFN0603-2; Ch: 1
Mounting: SMD
Case: DFN0603-2
Type of diode: TVS
Capacitance: 0.25pF
Leakage current: 50nA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
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PEC1605M1Q-AU_R1_005A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Application: automotive industry
Semiconductor structure: bidirectional
Case: DFN1006-2
Type of diode: TVS
Leakage current: 75nA
Number of channels: 1
Max. forward impulse current: 2A
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
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PEC1605M1Q_R1_00001 PEC1605M1Q.pdf
PEC1605M1Q_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
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PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU
PEC3324C2A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Application: automotive industry
Semiconductor structure: bidirectional; double
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOT23
Type of diode: TVS array
Capacitance: 30pF
Leakage current: 50nA
Max. forward impulse current: 7A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 26.2...30.3V
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PJ30072S6_R1_00301 PJ30072.pdf
Виробник: PanJit Semiconductor
Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
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PJA3400_R1_00001 PJA3400.pdf
PJA3400_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2671 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
19+24.34 грн
31+13.90 грн
100+8.62 грн
500+6.28 грн
1000+5.44 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
PJA3407_R1_00001 PJA3407.pdf
PJA3407_R1_00001
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2364 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.75 грн
25+17.24 грн
100+10.71 грн
500+7.95 грн
1000+7.12 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
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