Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1481) > Сторінка 15 з 25
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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P4SMAJ45CA_R1_00001 | PanJit Semiconductor |
 Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||
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P4SMAJ48CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||
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P4SMAJ48CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||
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P4SMAJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
на замовлення 7510 шт: термін постачання 14-30 дні (днів) |
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P4SMAJ5.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 1.6mA Features of semiconductor devices: glass passivated |
на замовлення 1602 шт: термін постачання 14-30 дні (днів) |
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P4SMAJ51A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||
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P4SMAJ51A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||
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P4SMAJ54CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 4.6A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||
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P4SMAJ54CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 4.6A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||
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P4SMAJ58A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||
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P4SMAJ58A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||
| P4SMAJ58CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | |||||||||||||
| P4SMAJ58CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | |||||||||||||
| P4SMAJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 38.8A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | |||||||||||||
| P4SMAJ6.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 38.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1.6mA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | |||||||||||||
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P4SMAJ6.5A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 35.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.5mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||
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P4SMAJ6.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 35.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1mA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||
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P4SMAJ60A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||
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P4SMAJ7.5A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 8.33÷9.21V; 31A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 31A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||
| P4SMAJ7.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 8.33÷9.21V; 31A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 31A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 0.2mA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | |||||||||||||
| P4SMAJ75A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 3.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | |||||||||||||
| P4SMAJ75CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 3.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | |||||||||||||
| P4SMAJ75CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 3.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | |||||||||||||
| P4SMAJ9.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 26A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | |||||||||||||
| P6AFC10A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMAF-C; P6AFC Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SMAF-C Mounting: SMD Leakage current: 0.5µA Application: automotive industry Kind of package: reel; tape Manufacturer series: P6AFC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6AFC3.3A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 5.2÷6V; 75A; unidirectional; SMAF-C; reel,tape Type of diode: TVS Breakdown voltage: 5.2...6V Semiconductor structure: unidirectional Mounting: SMD Case: SMAF-C Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry Manufacturer series: P6AFC Leakage current: 0.1mA Peak pulse power dissipation: 0.6kW Max. forward impulse current: 75A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6AFC40A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; unidirectional; SMAF-C; P6AFC Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 9.3A Semiconductor structure: unidirectional Case: SMAF-C Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6AFC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6AFC51A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMAF-C; P6AFC Manufacturer series: P6AFC Case: SMAF-C Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.1µA Max. forward impulse current: 7.3A Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Peak pulse power dissipation: 0.6kW Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE10A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 9.5÷10.5V; 41A; unidirectional; DO15; Ammo Pack Type of diode: TVS Breakdown voltage: 9.5...10.5V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Max. off-state voltage: 8.55V Features of semiconductor devices: glass passivated Max. forward impulse current: 41A Leakage current: 10µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE10CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 9.5÷10.5V; 41A; bidirectional; DO15; Ammo Pack; 0.6kW Type of diode: TVS Breakdown voltage: 9.5...10.5V Semiconductor structure: bidirectional Case: DO15 Mounting: THT Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated Max. forward impulse current: 41A Max. off-state voltage: 8.55V Leakage current: 20µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE12CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 11.4÷12.6V; 36A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Breakdown voltage: 11.4...12.6V Semiconductor structure: bidirectional Case: DO15 Mounting: THT Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Max. forward impulse current: 36A Features of semiconductor devices: glass passivated Max. off-state voltage: 10.2V Leakage current: 5µA |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE130A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 124÷137V; 3.3A; unidirectional; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 124...137V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Kind of package: Ammo Pack Manufacturer series: P6KE Leakage current: 1µA Max. forward impulse current: 3.3A Max. off-state voltage: 111V Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE130A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 124÷137V; 3.3A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 124...137V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Manufacturer series: P6KE Leakage current: 1µA Max. forward impulse current: 3.3A Max. off-state voltage: 111V Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE150A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; Ammo Pack Type of diode: TVS Breakdown voltage: 143...158V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Max. forward impulse current: 2.9A Max. off-state voltage: 128V Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE150A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE Type of diode: TVS Breakdown voltage: 143...158V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Max. forward impulse current: 2.9A Max. off-state voltage: 128V Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE15A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 14.3...15.8V Max. forward impulse current: 28A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE15A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 14.3...15.8V Max. forward impulse current: 28A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE160A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 136V Breakdown voltage: 152...168V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE160A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE Type of diode: TVS Max. off-state voltage: 136V Breakdown voltage: 152...168V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE16CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 15.2÷16.8V; 27A; bidirectional; DO15; Ammo Pack; 0.6kW Type of diode: TVS Max. off-state voltage: 13.6V Breakdown voltage: 15.2...16.8V Max. forward impulse current: 27A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE180A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 154V Breakdown voltage: 171...189V Max. forward impulse current: 2.4A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE180A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE Type of diode: TVS Max. off-state voltage: 154V Breakdown voltage: 171...189V Max. forward impulse current: 2.4A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE18A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 15.3V Breakdown voltage: 17.1...18.9V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE200A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; Ammo Pack Type of diode: TVS Breakdown voltage: 190...210V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Max. off-state voltage: 171V Features of semiconductor devices: glass passivated Max. forward impulse current: 2.2A Leakage current: 1µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE200A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; P6KE Type of diode: TVS Breakdown voltage: 190...210V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Max. off-state voltage: 171V Features of semiconductor devices: glass passivated Max. forward impulse current: 2.2A Leakage current: 1µA |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE20A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 17.1V Breakdown voltage: 19...21V Max. forward impulse current: 22A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE20A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 17.1V Breakdown voltage: 19...21V Max. forward impulse current: 22A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE20CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; Ammo Pack; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 17.1V Breakdown voltage: 19...21V Max. forward impulse current: 22A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE20CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 17.1V Breakdown voltage: 19...21V Max. forward impulse current: 22A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Features of semiconductor devices: glass passivated Manufacturer series: P6KE |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE24CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 22.8÷25.2V; 18A; bidirectional; DO15; Ammo Pack; 0.6kW Type of diode: TVS Max. off-state voltage: 20.5V Breakdown voltage: 22.8...25.2V Max. forward impulse current: 18A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE250A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; Ammo Pack Type of diode: TVS Breakdown voltage: 237...263V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Max. forward impulse current: 1.8A Max. off-state voltage: 214V Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE250A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; P6KE Type of diode: TVS Breakdown voltage: 237...263V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Max. forward impulse current: 1.8A Max. off-state voltage: 214V Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE27CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 25.7...28.4V Max. forward impulse current: 16A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE27CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; Ammo Pack; 0.6kW Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 25.7...28.4V Max. forward impulse current: 16A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE300A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 285÷315V; 1.5A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 256V Breakdown voltage: 285...315V Max. forward impulse current: 1.5A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE30A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 14.4A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE30A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 14.4A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE30CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; Ammo Pack; P6KE Type of diode: TVS Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 14.4A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE30CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 14.4A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| P6KE350A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 332...368V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Kind of package: Ammo Pack Manufacturer series: P6KE Max. forward impulse current: 1.3A Max. off-state voltage: 300V Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| P4SMAJ45CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| P4SMAJ48CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| P4SMAJ48CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| P4SMAJ5.0A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
на замовлення 7510 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.53 грн |
| 48+ | 8.65 грн |
| 100+ | 6.42 грн |
| 500+ | 5.85 грн |
| 1000+ | 5.35 грн |
| 1800+ | 4.78 грн |
| P4SMAJ5.0CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
на замовлення 1602 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.63 грн |
| 39+ | 10.62 грн |
| 100+ | 7.58 грн |
| 250+ | 6.75 грн |
| 500+ | 6.26 грн |
| P4SMAJ51A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| P4SMAJ51A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
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Мінімальне замовлення: 1800 шт
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| P4SMAJ54CA-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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Мінімальне замовлення: 1800 шт
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| P4SMAJ54CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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Мінімальне замовлення: 1800 шт
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| P4SMAJ58A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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Мінімальне замовлення: 1800 шт
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| P4SMAJ58A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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Мінімальне замовлення: 1800 шт
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| P4SMAJ58CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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Мінімальне замовлення: 1800 шт
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| P4SMAJ58CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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Мінімальне замовлення: 1800 шт
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| P4SMAJ6.0A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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Мінімальне замовлення: 1800 шт
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| P4SMAJ6.0CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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Мінімальне замовлення: 1800 шт
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| P4SMAJ6.5A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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Мінімальне замовлення: 1800 шт
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| P4SMAJ6.5CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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Мінімальне замовлення: 1800 шт
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| P4SMAJ60A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
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Мінімальне замовлення: 1800 шт
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| P4SMAJ7.5A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.33÷9.21V; 31A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.33÷9.21V; 31A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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Мінімальне замовлення: 1800 шт
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| P4SMAJ7.5CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.33÷9.21V; 31A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.2mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.33÷9.21V; 31A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.2mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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Мінімальне замовлення: 1800 шт
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| P4SMAJ75A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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Мінімальне замовлення: 1800 шт
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| P4SMAJ75CA-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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Мінімальне замовлення: 1800 шт
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| P4SMAJ75CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 1800 шт
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| P4SMAJ9.0CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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Мінімальне замовлення: 1800 шт
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| P6AFC10A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMAF-C; P6AFC
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMAF-C
Mounting: SMD
Leakage current: 0.5µA
Application: automotive industry
Kind of package: reel; tape
Manufacturer series: P6AFC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMAF-C; P6AFC
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMAF-C
Mounting: SMD
Leakage current: 0.5µA
Application: automotive industry
Kind of package: reel; tape
Manufacturer series: P6AFC
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| P6AFC3.3A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 5.2÷6V; 75A; unidirectional; SMAF-C; reel,tape
Type of diode: TVS
Breakdown voltage: 5.2...6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SMAF-C
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6AFC
Leakage current: 0.1mA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 75A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 5.2÷6V; 75A; unidirectional; SMAF-C; reel,tape
Type of diode: TVS
Breakdown voltage: 5.2...6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SMAF-C
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6AFC
Leakage current: 0.1mA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 75A
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| P6AFC40A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; unidirectional; SMAF-C; P6AFC
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMAF-C
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6AFC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; unidirectional; SMAF-C; P6AFC
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMAF-C
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6AFC
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| P6AFC51A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMAF-C; P6AFC
Manufacturer series: P6AFC
Case: SMAF-C
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. forward impulse current: 7.3A
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMAF-C; P6AFC
Manufacturer series: P6AFC
Case: SMAF-C
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. forward impulse current: 7.3A
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| P6KE10A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 9.5÷10.5V; 41A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Breakdown voltage: 9.5...10.5V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. off-state voltage: 8.55V
Features of semiconductor devices: glass passivated
Max. forward impulse current: 41A
Leakage current: 10µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 9.5÷10.5V; 41A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Breakdown voltage: 9.5...10.5V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. off-state voltage: 8.55V
Features of semiconductor devices: glass passivated
Max. forward impulse current: 41A
Leakage current: 10µA
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Мінімальне замовлення: 3000 шт
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| P6KE10CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5÷10.5V; 41A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Breakdown voltage: 9.5...10.5V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Max. forward impulse current: 41A
Max. off-state voltage: 8.55V
Leakage current: 20µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5÷10.5V; 41A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Breakdown voltage: 9.5...10.5V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Max. forward impulse current: 41A
Max. off-state voltage: 8.55V
Leakage current: 20µA
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Мінімальне замовлення: 3000 шт
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| P6KE12CA_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 11.4÷12.6V; 36A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Breakdown voltage: 11.4...12.6V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 36A
Features of semiconductor devices: glass passivated
Max. off-state voltage: 10.2V
Leakage current: 5µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 11.4÷12.6V; 36A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Breakdown voltage: 11.4...12.6V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 36A
Features of semiconductor devices: glass passivated
Max. off-state voltage: 10.2V
Leakage current: 5µA
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Мінімальне замовлення: 4000 шт
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| P6KE130A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 124÷137V; 3.3A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 124...137V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Leakage current: 1µA
Max. forward impulse current: 3.3A
Max. off-state voltage: 111V
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 124÷137V; 3.3A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 124...137V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Leakage current: 1µA
Max. forward impulse current: 3.3A
Max. off-state voltage: 111V
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
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| P6KE130A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 124÷137V; 3.3A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 124...137V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Leakage current: 1µA
Max. forward impulse current: 3.3A
Max. off-state voltage: 111V
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 124÷137V; 3.3A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 124...137V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Leakage current: 1µA
Max. forward impulse current: 3.3A
Max. off-state voltage: 111V
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 4000 шт
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| P6KE150A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Breakdown voltage: 143...158V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 2.9A
Max. off-state voltage: 128V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Breakdown voltage: 143...158V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 2.9A
Max. off-state voltage: 128V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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Мінімальне замовлення: 3000 шт
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| P6KE150A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE
Type of diode: TVS
Breakdown voltage: 143...158V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 2.9A
Max. off-state voltage: 128V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE
Type of diode: TVS
Breakdown voltage: 143...158V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 2.9A
Max. off-state voltage: 128V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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Мінімальне замовлення: 4000 шт
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| P6KE15A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
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| P6KE15A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 4000 шт
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| P6KE160A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
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| P6KE160A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 4000 шт
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| P6KE16CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15.2÷16.8V; 27A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15.2÷16.8V; 27A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
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| P6KE180A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
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| P6KE180A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 4000 шт
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| P6KE18A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
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| P6KE200A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Breakdown voltage: 190...210V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. off-state voltage: 171V
Features of semiconductor devices: glass passivated
Max. forward impulse current: 2.2A
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Breakdown voltage: 190...210V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. off-state voltage: 171V
Features of semiconductor devices: glass passivated
Max. forward impulse current: 2.2A
Leakage current: 1µA
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Мінімальне замовлення: 3000 шт
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| P6KE200A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; P6KE
Type of diode: TVS
Breakdown voltage: 190...210V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. off-state voltage: 171V
Features of semiconductor devices: glass passivated
Max. forward impulse current: 2.2A
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; P6KE
Type of diode: TVS
Breakdown voltage: 190...210V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. off-state voltage: 171V
Features of semiconductor devices: glass passivated
Max. forward impulse current: 2.2A
Leakage current: 1µA
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Мінімальне замовлення: 4000 шт
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| P6KE20A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
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| P6KE20A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 4000 шт
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| P6KE20CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; Ammo Pack; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; Ammo Pack; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
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| P6KE20CA_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
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Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| P6KE24CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8÷25.2V; 18A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8÷25.2V; 18A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| P6KE250A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Breakdown voltage: 237...263V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 1.8A
Max. off-state voltage: 214V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Breakdown voltage: 237...263V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 1.8A
Max. off-state voltage: 214V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| P6KE250A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; P6KE
Type of diode: TVS
Breakdown voltage: 237...263V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 1.8A
Max. off-state voltage: 214V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; P6KE
Type of diode: TVS
Breakdown voltage: 237...263V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 1.8A
Max. off-state voltage: 214V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| P6KE27CA-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Application: automotive industry
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Мінімальне замовлення: 4000 шт
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| P6KE27CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
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| P6KE300A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 285÷315V; 1.5A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 256V
Breakdown voltage: 285...315V
Max. forward impulse current: 1.5A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 285÷315V; 1.5A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 256V
Breakdown voltage: 285...315V
Max. forward impulse current: 1.5A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| P6KE30A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
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| P6KE30A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 4000 шт
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| P6KE30CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; Ammo Pack; P6KE
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; Ammo Pack; P6KE
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
В кошику
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| P6KE30CA_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 4000 шт
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| P6KE350A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 332...368V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 1.3A
Max. off-state voltage: 300V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 332...368V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 1.3A
Max. off-state voltage: 300V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.