Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (855) > Сторінка 11 з 15
| Фото | Назва | Виробник | Інформація |
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PJC7476_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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PJC7476_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| PJD16P06A_L2_00001 | PanJit Semiconductor |
PJD16P06A-L2 SMD P channel transistors |
на замовлення 10928 шт: термін постачання 14-21 дні (днів) |
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PJD18N20_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA Case: TO252AA Mounting: SMD On-state resistance: 0.16Ω Drain current: 11A Gate-source voltage: ±20V Power dissipation: 83W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 24nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJD25N03_L2_00001 | PanJit Semiconductor |
PJD25N03-L2 SMD N channel transistors |
на замовлення 4000 шт: термін постачання 14-21 дні (днів) |
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PJD25N06A_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 100A Power dissipation: 40W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1544 шт: термін постачання 14-21 дні (днів) |
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PJD25N06A_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 100A Power dissipation: 40W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1544 шт: термін постачання 21-30 дні (днів) |
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| PJD35P03_L2_00001 | PanJit Semiconductor |
PJD35P03-L2 SMD P channel transistors |
на замовлення 2503 шт: термін постачання 14-21 дні (днів) |
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PJD45N06A_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 45A Pulsed drain current: 180A Power dissipation: 63W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 239 шт: термін постачання 14-21 дні (днів) |
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PJD45N06A_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 45A Pulsed drain current: 180A Power dissipation: 63W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 239 шт: термін постачання 21-30 дні (днів) |
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| PJD55N04V-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 128A; Idm: 512A; 53W; TO252AA Case: TO252AA Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 34nC On-state resistance: 3.6mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 53W Drain current: 128A Pulsed drain current: 512A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD60P04E-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -61A; Idm: -171A; 38W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -61A Pulsed drain current: -171A Power dissipation: 38W Case: TO252AA Gate-source voltage: ±25V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD90P03E-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -88A Pulsed drain current: -219A Power dissipation: 40W Case: TO252AA Gate-source voltage: ±25V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJDLC05_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 5A; SOT23; Ch: 2; reel,tape; ESD Case: SOT23 Version: ESD Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Capacitance: 1pF Leakage current: 20µA Number of channels: 2 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJE138K_R1_00001 | PanJit Semiconductor |
PJE138K-R1 SMD N channel transistors |
на замовлення 3089 шт: термін постачання 14-21 дні (днів) |
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PJE5V0U8TB-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.8÷10.2V; SOT523; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 5.8...10.2V Mounting: SMD Case: SOT523 Max. off-state voltage: 5V Kind of package: reel; tape Application: automotive industry Version: ESD Leakage current: 1µA Capacitance: 0.8pF |
на замовлення 19933 шт: термін постачання 21-30 дні (днів) |
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PJE5V0U8TB-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.8÷10.2V; SOT523; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 5.8...10.2V Mounting: SMD Case: SOT523 Max. off-state voltage: 5V Kind of package: reel; tape Application: automotive industry Version: ESD Leakage current: 1µA Capacitance: 0.8pF кількість в упаковці: 1 шт |
на замовлення 19933 шт: термін постачання 14-21 дні (днів) |
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| PJE8403_R1_00001 | PanJit Semiconductor |
PJE8403-R1 SMD P channel transistors |
на замовлення 3995 шт: термін постачання 14-21 дні (днів) |
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| PJE8408_R1_00001 | PanJit Semiconductor |
PJE8408-R1 SMD N channel transistors |
на замовлення 3825 шт: термін постачання 14-21 дні (днів) |
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PJEC2415VM1WS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; SOD323 Semiconductor structure: asymmetric; bidirectional Application: automotive industry Version: ESD Mounting: SMD Kind of package: reel; tape Case: SOD323 Type of diode: TVS Capacitance: 17pF Leakage current: 50nA Number of channels: 1 Max. off-state voltage: 15...24V Breakdown voltage: 17.1...30.3V Peak pulse power dissipation: 160W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJGBLC03C-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 4.75÷5.25V; 1A; 350W; SOD323; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 4.75...5.25V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Mounting: SMD Case: SOD323 Max. off-state voltage: 3.3V Leakage current: 20µA Kind of package: reel; tape Capacitance: 3pF Version: ESD Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJGBLC03C_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323 Type of diode: TVS array Breakdown voltage: 4.75...5.25V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 3.3V Leakage current: 20µA Kind of package: reel; tape Capacitance: 3pF кількість в упаковці: 1 шт |
на замовлення 4020 шт: термін постачання 14-21 дні (днів) |
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PJGBLC03C_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323 Type of diode: TVS array Breakdown voltage: 4.75...5.25V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 3.3V Leakage current: 20µA Kind of package: reel; tape Capacitance: 3pF |
на замовлення 4020 шт: термін постачання 21-30 дні (днів) |
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PJGBLC05C_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323 Type of diode: TVS array Breakdown voltage: 7.03...7.77V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 5V Leakage current: 5µA Kind of package: reel; tape Capacitance: 3pF кількість в упаковці: 1 шт |
на замовлення 2306 шт: термін постачання 14-21 дні (днів) |
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PJGBLC05C_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323 Type of diode: TVS array Breakdown voltage: 7.03...7.77V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 5V Leakage current: 5µA Kind of package: reel; tape Capacitance: 3pF |
на замовлення 2306 шт: термін постачання 21-30 дні (днів) |
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PJGBLC12C_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323 Type of diode: TVS array Breakdown voltage: 13.97...15.44V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 12V Leakage current: 1µA Kind of package: reel; tape Capacitance: 3pF кількість в упаковці: 5 шт |
на замовлення 4655 шт: термін постачання 14-21 дні (днів) |
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PJGBLC12C_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323 Type of diode: TVS array Breakdown voltage: 13.97...15.44V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 12V Leakage current: 1µA Kind of package: reel; tape Capacitance: 3pF |
на замовлення 4655 шт: термін постачання 21-30 дні (днів) |
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| PJGBLC24C_R1_00001 | PanJit Semiconductor |
PJGBLC24C-R1 Protection diodes - arrays |
на замовлення 4430 шт: термін постачання 14-21 дні (днів) |
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| PJL9407_R2_00001 | PanJit Semiconductor | PJL9407-R2 SMD P channel transistors |
на замовлення 2479 шт: термін постачання 14-21 дні (днів) |
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| PJL9850_R2_00001 | PanJit Semiconductor |
PJL9850-R2 Multi channel transistors |
на замовлення 5047 шт: термін постачання 14-21 дні (днів) |
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| PJMB210N65EC_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 42A Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMB390N65EC_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 87.5W Case: TO263 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJMBZ27V-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23 Type of diode: TVS array Case: SOT23 Mounting: SMD Max. off-state voltage: 22V Semiconductor structure: common cathode; double Capacitance: 50pF Kind of package: reel; tape Leakage current: 50nA Number of channels: 2 Breakdown voltage: 25.65...28.35V Peak pulse power dissipation: 40W Application: automotive industry Version: ESD |
на замовлення 2950 шт: термін постачання 21-30 дні (днів) |
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PJMBZ27V-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23 Type of diode: TVS array Case: SOT23 Mounting: SMD Max. off-state voltage: 22V Semiconductor structure: common cathode; double Capacitance: 50pF Kind of package: reel; tape Leakage current: 50nA Number of channels: 2 Breakdown voltage: 25.65...28.35V Peak pulse power dissipation: 40W Application: automotive industry Version: ESD кількість в упаковці: 1 шт |
на замовлення 2950 шт: термін постачання 14-21 дні (днів) |
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| PJMBZ33A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23 Case: SOT23 Version: ESD Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Leakage current: 50nA Max. off-state voltage: 26V Breakdown voltage: 31.35...34.65V Peak pulse power dissipation: 40W Application: automotive industry Semiconductor structure: common anode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMBZ6V8A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23 Type of diode: TVS array Breakdown voltage: 6.46...7.14V Peak pulse power dissipation: 24W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 4.5V Leakage current: 0.5µA Application: automotive industry Version: ESD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMD280N60E1_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 49.1W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJMD360N60EC_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJMD580N60E1_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 54W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJMF099N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Power dissipation: 14W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 88A Gate charge: 60nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJMF120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 33W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJMF190N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 38W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 51 шт: термін постачання 14-21 дні (днів) |
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PJMF190N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 38W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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PJMF210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 32W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJMF280N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 34W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJMF360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 30W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
PJMF580N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB Case: ITO220AB Mounting: THT Gate charge: 15nC On-state resistance: 0.58Ω Drain current: 8A Pulsed drain current: 24A Power dissipation: 28W Gate-source voltage: ±30V Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJMF990N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 22.5W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJMH040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 71A Pulsed drain current: 212A Power dissipation: 200W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 144nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
PJMH074N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Pulsed drain current: 117A Power dissipation: 446W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 74mΩ Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
PJMH120N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJMH190N60E1_T0_00601 | PanJit Semiconductor |
PJMH190N60E1-T0 THT N channel transistors |
на замовлення 28 шт: термін постачання 14-21 дні (днів) |
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PJMP120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 51nC Pulsed drain current: 69A кількість в упаковці: 1 шт |
на замовлення 116 шт: термін постачання 14-21 дні (днів) |
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PJMP120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 51nC Pulsed drain current: 69A |
на замовлення 116 шт: термін постачання 21-30 дні (днів) |
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PJMP210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 150W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
PJMP360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJQ1908-AU_R1_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.9W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 1.45Ω Mounting: SMD Gate charge: 0.95nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ1908_R1_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.9W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 1.45Ω Mounting: SMD Gate charge: 0.95nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ2460-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 12.8A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Pulsed drain current: 12.8A Power dissipation: 2.4W Case: DFN2020B-6 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ4433EP_R2_00201 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -62A; Idm: -195A; 21.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -62A Pulsed drain current: -195A Power dissipation: 21.7W Case: DFN3333-8 Gate-source voltage: ±25V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| PJC7476_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.92 грн |
| 13+ | 24.39 грн |
| 100+ | 8.30 грн |
| 250+ | 7.45 грн |
| 500+ | 6.97 грн |
| PJC7476_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.27 грн |
| 21+ | 19.57 грн |
| 100+ | 6.92 грн |
| 250+ | 6.20 грн |
| 500+ | 5.81 грн |
| PJD16P06A_L2_00001 |
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Виробник: PanJit Semiconductor
PJD16P06A-L2 SMD P channel transistors
PJD16P06A-L2 SMD P channel transistors
на замовлення 10928 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.02 грн |
| 47+ | 24.44 грн |
| 127+ | 23.10 грн |
| 1000+ | 23.00 грн |
| PJD18N20_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
товару немає в наявності
В кошику
од. на суму грн.
| PJD25N03_L2_00001 |
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Виробник: PanJit Semiconductor
PJD25N03-L2 SMD N channel transistors
PJD25N03-L2 SMD N channel transistors
на замовлення 4000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 51.71 грн |
| 69+ | 16.51 грн |
| 188+ | 15.56 грн |
| PJD25N06A_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1544 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 51.40 грн |
| 10+ | 34.20 грн |
| 69+ | 16.42 грн |
| 188+ | 15.46 грн |
| 9000+ | 14.89 грн |
| PJD25N06A_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1544 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 42.83 грн |
| 15+ | 27.44 грн |
| 69+ | 13.68 грн |
| 188+ | 12.89 грн |
| PJD35P03_L2_00001 |
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Виробник: PanJit Semiconductor
PJD35P03-L2 SMD P channel transistors
PJD35P03-L2 SMD P channel transistors
на замовлення 2503 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.60 грн |
| 69+ | 16.32 грн |
| 190+ | 15.46 грн |
| PJD45N06A_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 239 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 77.10 грн |
| 10+ | 51.94 грн |
| 49+ | 23.10 грн |
| 134+ | 21.86 грн |
| 3000+ | 21.76 грн |
| 6000+ | 21.00 грн |
| PJD45N06A_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 239 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.25 грн |
| 10+ | 41.68 грн |
| 49+ | 19.25 грн |
| 134+ | 18.22 грн |
| PJD55N04V-AU_L2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 128A; Idm: 512A; 53W; TO252AA
Case: TO252AA
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 3.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 53W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 128A; Idm: 512A; 53W; TO252AA
Case: TO252AA
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 3.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 53W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PJD60P04E-AU_L2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -61A; Idm: -171A; 38W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -61A
Pulsed drain current: -171A
Power dissipation: 38W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -61A; Idm: -171A; 38W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -61A
Pulsed drain current: -171A
Power dissipation: 38W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJD90P03E-AU_L2_006A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJDLC05_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; SOT23; Ch: 2; reel,tape; ESD
Case: SOT23
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1pF
Leakage current: 20µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; SOT23; Ch: 2; reel,tape; ESD
Case: SOT23
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1pF
Leakage current: 20µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
товару немає в наявності
В кошику
од. на суму грн.
| PJE138K_R1_00001 |
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Виробник: PanJit Semiconductor
PJE138K-R1 SMD N channel transistors
PJE138K-R1 SMD N channel transistors
на замовлення 3089 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.57 грн |
| 225+ | 5.02 грн |
| 618+ | 4.74 грн |
| PJE5V0U8TB-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
на замовлення 19933 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.99 грн |
| 164+ | 5.73 грн |
| 450+ | 5.41 грн |
| 8000+ | 5.17 грн |
| PJE5V0U8TB-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
кількість в упаковці: 1 шт
на замовлення 19933 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.78 грн |
| 164+ | 7.14 грн |
| 450+ | 6.49 грн |
| 8000+ | 6.20 грн |
| PJE8403_R1_00001 |
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Виробник: PanJit Semiconductor
PJE8403-R1 SMD P channel transistors
PJE8403-R1 SMD P channel transistors
на замовлення 3995 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.44 грн |
| 170+ | 6.68 грн |
| 466+ | 6.30 грн |
| 1000+ | 6.25 грн |
| PJE8408_R1_00001 |
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Виробник: PanJit Semiconductor
PJE8408-R1 SMD N channel transistors
PJE8408-R1 SMD N channel transistors
на замовлення 3825 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.64 грн |
| 170+ | 6.68 грн |
| 250+ | 6.25 грн |
| PJEC2415VM1WS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; SOD323
Semiconductor structure: asymmetric; bidirectional
Application: automotive industry
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS
Capacitance: 17pF
Leakage current: 50nA
Number of channels: 1
Max. off-state voltage: 15...24V
Breakdown voltage: 17.1...30.3V
Peak pulse power dissipation: 160W
Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; SOD323
Semiconductor structure: asymmetric; bidirectional
Application: automotive industry
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS
Capacitance: 17pF
Leakage current: 50nA
Number of channels: 1
Max. off-state voltage: 15...24V
Breakdown voltage: 17.1...30.3V
Peak pulse power dissipation: 160W
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| PJGBLC03C-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; SOD323; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Kind of package: reel; tape
Capacitance: 3pF
Version: ESD
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; SOD323; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Kind of package: reel; tape
Capacitance: 3pF
Version: ESD
Application: automotive industry
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од. на суму грн.
| PJGBLC03C_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Kind of package: reel; tape
Capacitance: 3pF
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Kind of package: reel; tape
Capacitance: 3pF
кількість в упаковці: 1 шт
на замовлення 4020 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.76 грн |
| 17+ | 18.04 грн |
| 100+ | 11.74 грн |
| 133+ | 8.50 грн |
| 365+ | 8.02 грн |
| 10000+ | 7.73 грн |
| PJGBLC03C_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Kind of package: reel; tape
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Kind of package: reel; tape
Capacitance: 3pF
на замовлення 4020 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.13 грн |
| 28+ | 14.48 грн |
| 100+ | 9.78 грн |
| 133+ | 7.08 грн |
| 365+ | 6.68 грн |
| PJGBLC05C_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 7.03...7.77V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 5V
Leakage current: 5µA
Kind of package: reel; tape
Capacitance: 3pF
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 7.03...7.77V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 5V
Leakage current: 5µA
Kind of package: reel; tape
Capacitance: 3pF
кількість в упаковці: 1 шт
на замовлення 2306 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.76 грн |
| 17+ | 18.34 грн |
| 100+ | 11.93 грн |
| 141+ | 7.92 грн |
| 386+ | 7.54 грн |
| 10000+ | 7.45 грн |
| PJGBLC05C_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 7.03...7.77V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 5V
Leakage current: 5µA
Kind of package: reel; tape
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 7.03...7.77V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 5V
Leakage current: 5µA
Kind of package: reel; tape
Capacitance: 3pF
на замовлення 2306 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.13 грн |
| 28+ | 14.72 грн |
| 100+ | 9.94 грн |
| 141+ | 6.60 грн |
| 386+ | 6.28 грн |
| PJGBLC12C_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
кількість в упаковці: 5 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
кількість в упаковці: 5 шт
на замовлення 4655 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 14.19 грн |
| 30+ | 11.00 грн |
| 100+ | 9.55 грн |
| 145+ | 8.02 грн |
| 390+ | 7.54 грн |
| 5000+ | 7.16 грн |
| PJGBLC12C_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
на замовлення 4655 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 11.82 грн |
| 50+ | 8.83 грн |
| 100+ | 7.95 грн |
| 145+ | 6.68 грн |
| 390+ | 6.28 грн |
| PJGBLC24C_R1_00001 |
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Виробник: PanJit Semiconductor
PJGBLC24C-R1 Protection diodes - arrays
PJGBLC24C-R1 Protection diodes - arrays
на замовлення 4430 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 14.91 грн |
| 145+ | 8.02 грн |
| 390+ | 7.54 грн |
| 10000+ | 7.53 грн |
| PJL9407_R2_00001 |
Виробник: PanJit Semiconductor
PJL9407-R2 SMD P channel transistors
PJL9407-R2 SMD P channel transistors
на замовлення 2479 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.14 грн |
| 111+ | 10.21 грн |
| 304+ | 9.64 грн |
| 7500+ | 9.62 грн |
| PJL9850_R2_00001 |
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Виробник: PanJit Semiconductor
PJL9850-R2 Multi channel transistors
PJL9850-R2 Multi channel transistors
на замовлення 5047 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.43 грн |
| 66+ | 17.28 грн |
| 179+ | 16.32 грн |
| PJMB210N65EC_R2_00601 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
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| PJMB390N65EC_R2_00601 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PJMBZ27V-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Leakage current: 50nA
Number of channels: 2
Breakdown voltage: 25.65...28.35V
Peak pulse power dissipation: 40W
Application: automotive industry
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Leakage current: 50nA
Number of channels: 2
Breakdown voltage: 25.65...28.35V
Peak pulse power dissipation: 40W
Application: automotive industry
Version: ESD
на замовлення 2950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 11.99 грн |
| 49+ | 8.19 грн |
| 62+ | 6.49 грн |
| 100+ | 5.88 грн |
| 500+ | 4.69 грн |
| 1000+ | 4.26 грн |
| PJMBZ27V-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Leakage current: 50nA
Number of channels: 2
Breakdown voltage: 25.65...28.35V
Peak pulse power dissipation: 40W
Application: automotive industry
Version: ESD
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.65÷28.35V; 40W; double,common cathode; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Max. off-state voltage: 22V
Semiconductor structure: common cathode; double
Capacitance: 50pF
Kind of package: reel; tape
Leakage current: 50nA
Number of channels: 2
Breakdown voltage: 25.65...28.35V
Peak pulse power dissipation: 40W
Application: automotive industry
Version: ESD
кількість в упаковці: 1 шт
на замовлення 2950 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.39 грн |
| 30+ | 10.21 грн |
| 50+ | 7.79 грн |
| 100+ | 7.05 грн |
| 500+ | 5.62 грн |
| 1000+ | 5.12 грн |
| 3000+ | 4.41 грн |
| PJMBZ33A-AU_R1_007A1 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Case: SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 50nA
Max. off-state voltage: 26V
Breakdown voltage: 31.35...34.65V
Peak pulse power dissipation: 40W
Application: automotive industry
Semiconductor structure: common anode; double
Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Case: SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 50nA
Max. off-state voltage: 26V
Breakdown voltage: 31.35...34.65V
Peak pulse power dissipation: 40W
Application: automotive industry
Semiconductor structure: common anode; double
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од. на суму грн.
| PJMBZ6V8A-AU_R1_007A1 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Leakage current: 0.5µA
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Leakage current: 0.5µA
Application: automotive industry
Version: ESD
Kind of package: reel; tape
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од. на суму грн.
| PJMD280N60E1_L2_00601 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMD360N60EC_L2_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMD580N60E1_L2_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMF099N60EC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
товару немає в наявності
В кошику
од. на суму грн.
| PJMF120N60EC_T0_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
товару немає в наявності
В кошику
од. на суму грн.
| PJMF190N60E1_T0_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 51 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 247.75 грн |
| 9+ | 137.79 грн |
| 24+ | 125.05 грн |
| 2000+ | 120.28 грн |
| PJMF190N60E1_T0_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 206.46 грн |
| 9+ | 110.57 грн |
| 24+ | 104.21 грн |
| PJMF210N65EC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
товару немає в наявності
В кошику
од. на суму грн.
| PJMF280N60E1_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMF360N60EC_T0_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMF580N60E1_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Case: ITO220AB
Mounting: THT
Gate charge: 15nC
On-state resistance: 0.58Ω
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Case: ITO220AB
Mounting: THT
Gate charge: 15nC
On-state resistance: 0.58Ω
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| PJMF990N65EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH040N60EC_T0_00201 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH074N60FRC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH120N60EC_T0_00601 |
![]() |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
товару немає в наявності
В кошику
од. на суму грн.
| PJMH190N60E1_T0_00601 |
![]() |
Виробник: PanJit Semiconductor
PJMH190N60E1-T0 THT N channel transistors
PJMH190N60E1-T0 THT N channel transistors
на замовлення 28 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 399.90 грн |
| 9+ | 131.73 грн |
| 24+ | 124.10 грн |
| PJMP120N60EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
кількість в упаковці: 1 шт
на замовлення 116 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 321.77 грн |
| 10+ | 277.57 грн |
| 50+ | 224.33 грн |
| 100+ | 201.42 грн |
| 250+ | 186.15 грн |
| 500+ | 178.51 грн |
| 1000+ | 160.37 грн |
| PJMP120N60EC_T0_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
на замовлення 116 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 268.14 грн |
| 10+ | 222.74 грн |
| 50+ | 186.94 грн |
| 100+ | 167.85 грн |
| PJMP210N65EC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
товару немає в наявності
В кошику
од. на суму грн.
| PJMP360N60EC_T0_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJQ1908-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ1908_R1_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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| PJQ2460-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 12.8A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 12.8A
Power dissipation: 2.4W
Case: DFN2020B-6
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 12.8A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 12.8A
Power dissipation: 2.4W
Case: DFN2020B-6
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4433EP_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -62A; Idm: -195A; 21.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -62A
Pulsed drain current: -195A
Power dissipation: 21.7W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -62A; Idm: -195A; 21.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -62A
Pulsed drain current: -195A
Power dissipation: 21.7W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.









