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P4SMAJ33CA-AU_R1_000A1 P4SMAJ33CA-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1770 шт:
термін постачання 7-14 дні (днів)
19+17.11 грн
250+13.72 грн
500+11.52 грн
1000+9.24 грн
1800+7.15 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
P4SMAJ33CA_R1_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ36A-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ36A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ36CA-AU_R1_000A1 P4SMAJ36CA-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P4SMAJ
на замовлення 1734 шт:
термін постачання 21-30 дні (днів)
25+17.83 грн
250+12.99 грн
500+11.42 грн
1000+9.10 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
P4SMAJ36CA-AU_R1_000A1 P4SMAJ36CA-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P4SMAJ
кількість в упаковці: 1 шт
на замовлення 1734 шт:
термін постачання 7-14 дні (днів)
15+21.39 грн
250+16.19 грн
500+13.71 грн
1000+10.92 грн
1800+8.44 грн
3600+7.15 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
P4SMAJ48A_R1_00001 PanJit Semiconductor P4SMAJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; unidirectional; SMA; reel,tape; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ5.0A_R1_00001 P4SMAJ5.0A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 7570 шт:
термін постачання 7-14 дні (днів)
24+13.90 грн
29+10.83 грн
100+7.75 грн
500+7.05 грн
1000+6.46 грн
1800+5.76 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
P4SMAJ5.0A_R1_00001 P4SMAJ5.0A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 7570 шт:
термін постачання 21-30 дні (днів)
39+11.59 грн
48+8.69 грн
100+6.46 грн
500+5.88 грн
1000+5.38 грн
1800+4.80 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
P4SMAJ5.0CA_R1_00001 P4SMAJ5.0CA_R1_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1602 шт:
термін постачання 7-14 дні (днів)
15+22.46 грн
24+13.30 грн
100+9.14 грн
250+8.14 грн
500+7.65 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
P4SMAJ5.0CA_R1_00001 P4SMAJ5.0CA_R1_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1602 шт:
термін постачання 21-30 дні (днів)
24+18.72 грн
39+10.68 грн
100+7.61 грн
250+6.79 грн
500+6.37 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
P4SMAJ6.0A_R1_00001 PanJit Semiconductor P4SMAJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; unidirectional; SMA; reel,tape; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6AFC28A-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMAF-C; P6AFC
Mounting: SMD
Application: automotive industry
Case: SMAF-C
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. forward impulse current: 13.2A
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6AFC
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P6KE10CA_AY_00001 PanJit Semiconductor Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5÷10.5V; 41A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5...10.5V
Max. forward impulse current: 41A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 20µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6KE150A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE150A_R2_00001 PanJit Semiconductor P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE15A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6KE15A_R2_00001 PanJit Semiconductor P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6KE160A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 2.7A
Features of semiconductor devices: glass passivated
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P6KE160A_R2_00001 PanJit Semiconductor P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 2.7A
Features of semiconductor devices: glass passivated
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P6KE16CA_AY_00001 PanJit Semiconductor Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15.2÷16.8V; 27A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 15.2...16.8V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 27A
Features of semiconductor devices: glass passivated
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P6KE180A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 2.4A
Features of semiconductor devices: glass passivated
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P6KE180A_R2_00001 PanJit Semiconductor P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 2.4A
Features of semiconductor devices: glass passivated
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P6KE18A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6KE200A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6KE200A_R2_00001 PanJit Semiconductor P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6KE220A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE24CA_AY_00001 PanJit Semiconductor Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8÷25.2V; 18A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 18A
Features of semiconductor devices: glass passivated
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P6KE250A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE250A_R2_00001 PanJit Semiconductor P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE27CA-AU_R2_000A1 PanJit Semiconductor Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6KE27CA_AY_00001 PanJit Semiconductor Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6KE30A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE30A_R2_00001 PanJit Semiconductor P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE39CA_AY_00001 PanJit Semiconductor Category: Bidirectional TVS THT diodes
Description: Diode: TVS; bidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE43A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE56CA_R2_00001 PanJit Semiconductor P6KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.2÷58.8V; 7.8A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Max. forward impulse current: 7.8A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6SMB12A-AU_R2_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Features of semiconductor devices: glass passivated
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P6SMB16CA-AU_R2_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.2÷16.8V; 27A; bidirectional; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 27A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: bidirectional
Case: SMB
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 1µA
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P6SMB16CA_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.2÷16.8V; 27A; bidirectional; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 27A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 1µA
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P6SMB27A_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 27V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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P6SMB30A-AU_R1_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
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P6SMB30A_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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P6SMB30CA-AU_R1_000A1 P6SMB30CA-AU_R1_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 14.4A
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMB
Application: automotive industry
на замовлення 835 шт:
термін постачання 21-30 дні (днів)
19+24.06 грн
30+13.99 грн
100+10.59 грн
500+9.02 грн
800+8.69 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
P6SMB30CA-AU_R1_000A1 P6SMB30CA-AU_R1_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 14.4A
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMB
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 835 шт:
термін постачання 7-14 дні (днів)
12+28.88 грн
18+17.43 грн
100+12.71 грн
500+10.83 грн
800+10.43 грн
1600+10.33 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
P6SMB30CA_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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P6SMB36CA-AU_R1_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf P6SMB36CA-AU-R1 Bidirectional TVS SMD diodes
на замовлення 203 шт:
термін постачання 7-14 дні (днів)
6+57.11 грн
107+11.02 грн
294+10.43 грн
20000+10.42 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
P6SMBJ10CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf P6SMBJ10CA-R1 Bidirectional TVS SMD diodes
на замовлення 760 шт:
термін постачання 7-14 дні (днів)
10+32.41 грн
135+8.74 грн
369+8.34 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMBJ13A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
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P6SMBJ13A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ13CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ13CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ150CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ15A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ15A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ15CA_R1_00001 P6SMBJ15CA_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 565 шт:
термін постачання 7-14 дні (днів)
13+25.67 грн
19+16.40 грн
100+11.52 грн
250+10.13 грн
500+9.04 грн
800+8.34 грн
1600+8.04 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
P6SMBJ15CA_R1_00001 P6SMBJ15CA_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 565 шт:
термін постачання 21-30 дні (днів)
21+21.39 грн
32+13.16 грн
100+9.60 грн
250+8.44 грн
500+7.53 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
P6SMBJ160A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 160V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ16A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ16A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P4SMAJ33CA-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
P4SMAJ33CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1770 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
19+17.11 грн
250+13.72 грн
500+11.52 грн
1000+9.24 грн
1800+7.15 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
P4SMAJ33CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ36A-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ36A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ36CA-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
P4SMAJ36CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P4SMAJ
на замовлення 1734 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.83 грн
250+12.99 грн
500+11.42 грн
1000+9.10 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
P4SMAJ36CA-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
P4SMAJ36CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P4SMAJ
кількість в упаковці: 1 шт
на замовлення 1734 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
15+21.39 грн
250+16.19 грн
500+13.71 грн
1000+10.92 грн
1800+8.44 грн
3600+7.15 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
P4SMAJ48A_R1_00001 P4SMAJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; unidirectional; SMA; reel,tape; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ5.0A_R1_00001
P4SMAJ5.0A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 7570 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
24+13.90 грн
29+10.83 грн
100+7.75 грн
500+7.05 грн
1000+6.46 грн
1800+5.76 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
P4SMAJ5.0A_R1_00001
P4SMAJ5.0A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 7570 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.59 грн
48+8.69 грн
100+6.46 грн
500+5.88 грн
1000+5.38 грн
1800+4.80 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
P4SMAJ5.0CA_R1_00001
P4SMAJ5.0CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1602 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
15+22.46 грн
24+13.30 грн
100+9.14 грн
250+8.14 грн
500+7.65 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
P4SMAJ5.0CA_R1_00001
P4SMAJ5.0CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1602 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+18.72 грн
39+10.68 грн
100+7.61 грн
250+6.79 грн
500+6.37 грн
Мінімальне замовлення: 24
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P4SMAJ6.0A_R1_00001 P4SMAJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; unidirectional; SMA; reel,tape; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6AFC28A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMAF-C; P6AFC
Mounting: SMD
Application: automotive industry
Case: SMAF-C
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. forward impulse current: 13.2A
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6AFC
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P6KE10CA_AY_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5÷10.5V; 41A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5...10.5V
Max. forward impulse current: 41A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 20µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6KE150A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE150A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE15A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6KE15A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6KE160A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 2.7A
Features of semiconductor devices: glass passivated
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P6KE160A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 2.7A
Features of semiconductor devices: glass passivated
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P6KE16CA_AY_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15.2÷16.8V; 27A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 15.2...16.8V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 27A
Features of semiconductor devices: glass passivated
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P6KE180A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 2.4A
Features of semiconductor devices: glass passivated
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P6KE180A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 2.4A
Features of semiconductor devices: glass passivated
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P6KE18A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6KE200A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6KE200A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6KE220A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE24CA_AY_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8÷25.2V; 18A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 18A
Features of semiconductor devices: glass passivated
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P6KE250A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE250A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE27CA-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6KE27CA_AY_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6KE30A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE30A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE39CA_AY_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; bidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE43A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
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P6KE56CA_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.2÷58.8V; 7.8A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Max. forward impulse current: 7.8A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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P6SMB12A-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
Features of semiconductor devices: glass passivated
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P6SMB16CA-AU_R2_000A1 P6SMB-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.2÷16.8V; 27A; bidirectional; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 27A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: bidirectional
Case: SMB
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 1µA
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P6SMB16CA_R1_00001 P6SMB_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.2÷16.8V; 27A; bidirectional; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 27A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 1µA
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P6SMB27A_R1_00001 P6SMB_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 27V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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P6SMB30A-AU_R1_000A1 P6SMB-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Application: automotive industry
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P6SMB30A_R1_00001 P6SMB_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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P6SMB30CA-AU_R1_000A1 P6SMB-AU_SERIES.pdf
P6SMB30CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 14.4A
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMB
Application: automotive industry
на замовлення 835 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+24.06 грн
30+13.99 грн
100+10.59 грн
500+9.02 грн
800+8.69 грн
Мінімальне замовлення: 19
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P6SMB30CA-AU_R1_000A1 P6SMB-AU_SERIES.pdf
P6SMB30CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 14.4A
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMB
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 835 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
12+28.88 грн
18+17.43 грн
100+12.71 грн
500+10.83 грн
800+10.43 грн
1600+10.33 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
P6SMB30CA_R1_00001 P6SMB_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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P6SMB36CA-AU_R1_000A1 P6SMB-AU_SERIES.pdf
Виробник: PanJit Semiconductor
P6SMB36CA-AU-R1 Bidirectional TVS SMD diodes
на замовлення 203 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
6+57.11 грн
107+11.02 грн
294+10.43 грн
20000+10.42 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
P6SMBJ10CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
P6SMBJ10CA-R1 Bidirectional TVS SMD diodes
на замовлення 760 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
10+32.41 грн
135+8.74 грн
369+8.34 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMBJ13A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
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P6SMBJ13A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ13CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ13CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ150CA_R2_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ15A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ15A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ15CA_R1_00001 P6SMB_SERIES.pdf
P6SMBJ15CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 565 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
13+25.67 грн
19+16.40 грн
100+11.52 грн
250+10.13 грн
500+9.04 грн
800+8.34 грн
1600+8.04 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
P6SMBJ15CA_R1_00001 P6SMB_SERIES.pdf
P6SMBJ15CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 565 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+21.39 грн
32+13.16 грн
100+9.60 грн
250+8.44 грн
500+7.53 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
P6SMBJ160A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 160V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ16A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ16A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
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