Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (992) > Сторінка 11 з 17
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| P4SMAJ58A-AU_R1_000A1 | PanJit Semiconductor |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Application: automotive industry Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
| P4SMAJ58A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
| P4SMAJ58CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P4SMAJ58CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
| P4SMAJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 38.8A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
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В кошику од. на суму грн. | |||||||||||
| P4SMAJ6.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 38.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1.6mA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
| P4SMAJ6.5A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 35.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.5mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
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В кошику од. на суму грн. | |||||||||||
| P4SMAJ6.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 35.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1mA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
| P4SMAJ60CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Application: automotive industry Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
| P4SMAJ60CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
| P4SMAJ8.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 8V Breakdown voltage: 8.89...9.83V Max. forward impulse current: 29.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 0.1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
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В кошику од. на суму грн. | |||||||||||
| P6AFC14A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMAF-C; P6AFC Mounting: SMD Kind of package: reel; tape Case: SMAF-C Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.1µA Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 25.9A Peak pulse power dissipation: 0.6kW Application: automotive industry Manufacturer series: P6AFC |
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В кошику од. на суму грн. | |||||||||||
| P6KE10CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 9.5÷10.5V; 41A; bidirectional; DO15; Ammo Pack; 0.6kW Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.55V Breakdown voltage: 9.5...10.5V Max. forward impulse current: 41A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 20µA Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||
| P6KE12CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 11.4÷12.6V; 36A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Breakdown voltage: 11.4...12.6V Semiconductor structure: bidirectional Case: DO15 Mounting: THT Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Leakage current: 5µA Max. forward impulse current: 36A Max. off-state voltage: 10.2V Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||
| P6KE13A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 12.4÷13.7V; 33A; unidirectional; DO15; Ammo Pack Type of diode: TVS Semiconductor structure: unidirectional Mounting: THT Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated Case: DO15 Leakage current: 1µA Max. off-state voltage: 11.1V Breakdown voltage: 12.4...13.7V Max. forward impulse current: 33A Peak pulse power dissipation: 0.6kW |
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В кошику од. на суму грн. | |||||||||||
| P6KE150A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 143...158V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Kind of package: Ammo Pack Manufacturer series: P6KE Max. forward impulse current: 2.9A Max. off-state voltage: 128V Features of semiconductor devices: glass passivated Leakage current: 1µA |
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В кошику од. на суму грн. | |||||||||||
| P6KE150A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 143...158V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Manufacturer series: P6KE Max. forward impulse current: 2.9A Max. off-state voltage: 128V Features of semiconductor devices: glass passivated Leakage current: 1µA |
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В кошику од. на суму грн. | |||||||||||
| P6KE15A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 14.3...15.8V Max. forward impulse current: 28A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||
| P6KE15A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 14.3...15.8V Max. forward impulse current: 28A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||
| P6KE160A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 136V Breakdown voltage: 152...168V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6KE160A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 136V Breakdown voltage: 152...168V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6KE180A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 154V Breakdown voltage: 171...189V Max. forward impulse current: 2.4A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||
| P6KE180A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE Type of diode: TVS Max. off-state voltage: 154V Breakdown voltage: 171...189V Max. forward impulse current: 2.4A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||
| P6KE18A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1...18.9V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||
| P6KE200A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 190...210V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Kind of package: Ammo Pack Manufacturer series: P6KE Max. forward impulse current: 2.2A Max. off-state voltage: 171V Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6KE200A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 190...210V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Manufacturer series: P6KE Max. forward impulse current: 2.2A Max. off-state voltage: 171V Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6KE20A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; Ammo Pack Type of diode: TVS Semiconductor structure: unidirectional Mounting: THT Kind of package: Ammo Pack Leakage current: 1µA Max. forward impulse current: 22A Max. off-state voltage: 17.1V Breakdown voltage: 19...21V Peak pulse power dissipation: 0.6kW Case: DO15 Features of semiconductor devices: glass passivated Manufacturer series: P6KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6KE20A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE Type of diode: TVS Semiconductor structure: unidirectional Mounting: THT Leakage current: 1µA Max. forward impulse current: 22A Max. off-state voltage: 17.1V Breakdown voltage: 19...21V Peak pulse power dissipation: 0.6kW Case: DO15 Features of semiconductor devices: glass passivated Manufacturer series: P6KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6KE20CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; Ammo Pack; 0.6kW; P6KE Type of diode: TVS Semiconductor structure: bidirectional Mounting: THT Kind of package: Ammo Pack Leakage current: 1µA Max. forward impulse current: 22A Max. off-state voltage: 17.1V Breakdown voltage: 19...21V Peak pulse power dissipation: 0.6kW Case: DO15 Features of semiconductor devices: glass passivated Manufacturer series: P6KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6KE20CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Semiconductor structure: bidirectional Mounting: THT Leakage current: 1µA Max. forward impulse current: 22A Max. off-state voltage: 17.1V Breakdown voltage: 19...21V Peak pulse power dissipation: 0.6kW Case: DO15 Features of semiconductor devices: glass passivated Manufacturer series: P6KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6KE220A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 209÷231V; 1.9A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 185V Breakdown voltage: 209...231V Max. forward impulse current: 1.9A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Features of semiconductor devices: glass passivated Manufacturer series: P6KE |
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В кошику од. на суму грн. | |||||||||||
| P6KE24CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 22.8÷25.2V; 18A; bidirectional; DO15; Ammo Pack; 0.6kW Type of diode: TVS Semiconductor structure: bidirectional Mounting: THT Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated Case: DO15 Leakage current: 1µA Max. forward impulse current: 18A Max. off-state voltage: 20.5V Breakdown voltage: 22.8...25.2V Peak pulse power dissipation: 0.6kW |
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В кошику од. на суму грн. | |||||||||||
| P6KE250A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 237...263V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Kind of package: Ammo Pack Manufacturer series: P6KE Leakage current: 1µA Max. forward impulse current: 1.8A Max. off-state voltage: 214V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6KE250A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 237...263V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Manufacturer series: P6KE Leakage current: 1µA Max. forward impulse current: 1.8A Max. off-state voltage: 214V Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||
| P6KE27CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; Ammo Pack; 0.6kW Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 25.7...28.4V Max. forward impulse current: 16A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||
| P6KE300A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 285÷315V; 1.5A; unidirectional; DO15; Ammo Pack Type of diode: TVS Breakdown voltage: 285...315V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Max. forward impulse current: 1.5A Max. off-state voltage: 256V Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6KE30A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 14.4A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||
| P6KE30A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 14.4A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||
| P6KE350A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 332...368V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Kind of package: Ammo Pack Manufacturer series: P6KE Max. forward impulse current: 1.3A Max. off-state voltage: 300V Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6KE350A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 332...368V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Manufacturer series: P6KE Max. forward impulse current: 1.3A Max. off-state voltage: 300V Features of semiconductor devices: glass passivated Leakage current: 1µA |
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В кошику од. на суму грн. | |||||||||||
| P6KE39CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 37.1÷41V; 11.2A; bidirectional; DO15; Ammo Pack; 0.6kW Type of diode: TVS Max. off-state voltage: 33.3V Breakdown voltage: 37.1...41V Max. forward impulse current: 11.2A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6KE6.8A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; unidirectional; DO15; P6KE Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.45...7.14V Max. forward impulse current: 57A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1mA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6KE62CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 58.9÷65.1V; 7.1A; bidirectional; DO15; Ammo Pack; 0.6kW Type of diode: TVS Max. off-state voltage: 53V Breakdown voltage: 58.9...65.1V Max. forward impulse current: 7.1A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6KE62CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 58.9÷65.1V; 7.1A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 53V Breakdown voltage: 58.9...65.1V Max. forward impulse current: 7.1A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||
| P6SMB180A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 154V Breakdown voltage: 171...189V Max. forward impulse current: 2.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMB |
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В кошику од. на суму грн. | |||||||||||
| P6SMB18A-AU_R1_006A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1...18.9V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6SMB18A-AU_R2_006A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1...18.9V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6SMB18A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1...18.9V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
P6SMB30CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 14.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB Features of semiconductor devices: glass passivated |
на замовлення 835 шт: термін постачання 14-30 дні (днів) |
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| P6SMB30CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 14.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6SMB36A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Max. forward impulse current: 12A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6SMB47A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 44.7÷49.4V; 9.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40.2V Breakdown voltage: 44.7...49.4V Max. forward impulse current: 9.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6SMB56A-AU_R2_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; unidirectional; SMB; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Application: automotive industry Leakage current: 1µA Max. forward impulse current: 7.8A Max. off-state voltage: 47.8V Breakdown voltage: 53.2...58.8V Peak pulse power dissipation: 0.6kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6SMB56A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; unidirectional; SMB; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Leakage current: 1µA Max. forward impulse current: 7.8A Max. off-state voltage: 47.8V Breakdown voltage: 53.2...58.8V Peak pulse power dissipation: 0.6kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6SMB56CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; bidirectional; SMB; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Application: automotive industry Leakage current: 1µA Max. forward impulse current: 7.8A Max. off-state voltage: 47.8V Breakdown voltage: 53.2...58.8V Peak pulse power dissipation: 0.6kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6SMB6.8CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.45...7.14V Max. forward impulse current: 57A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 2mA Kind of package: reel; tape Manufacturer series: P6SMB Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||
| P6SMBJ100A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 111÷123V; 3.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...123V Max. forward impulse current: 3.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6SMBJ10A-AU_R2_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P6SMBJ10A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
| P6SMBJ12A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 30.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. |
| P4SMAJ58A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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В кошику
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| P4SMAJ58A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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В кошику
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| P4SMAJ58CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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В кошику
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| P4SMAJ58CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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В кошику
од. на суму грн.
| P4SMAJ6.0A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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В кошику
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| P4SMAJ6.0CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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В кошику
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| P4SMAJ6.5A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P4SMAJ6.5CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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В кошику
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| P4SMAJ60CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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| P4SMAJ60CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| P4SMAJ8.0CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P6AFC14A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMAF-C; P6AFC
Mounting: SMD
Kind of package: reel; tape
Case: SMAF-C
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.9A
Peak pulse power dissipation: 0.6kW
Application: automotive industry
Manufacturer series: P6AFC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMAF-C; P6AFC
Mounting: SMD
Kind of package: reel; tape
Case: SMAF-C
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.9A
Peak pulse power dissipation: 0.6kW
Application: automotive industry
Manufacturer series: P6AFC
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| P6KE10CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5÷10.5V; 41A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5...10.5V
Max. forward impulse current: 41A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 20µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5÷10.5V; 41A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5...10.5V
Max. forward impulse current: 41A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 20µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE12CA_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 11.4÷12.6V; 36A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Breakdown voltage: 11.4...12.6V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Leakage current: 5µA
Max. forward impulse current: 36A
Max. off-state voltage: 10.2V
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 11.4÷12.6V; 36A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Breakdown voltage: 11.4...12.6V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Leakage current: 5µA
Max. forward impulse current: 36A
Max. off-state voltage: 10.2V
Features of semiconductor devices: glass passivated
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| P6KE13A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 12.4÷13.7V; 33A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Case: DO15
Leakage current: 1µA
Max. off-state voltage: 11.1V
Breakdown voltage: 12.4...13.7V
Max. forward impulse current: 33A
Peak pulse power dissipation: 0.6kW
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 12.4÷13.7V; 33A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Case: DO15
Leakage current: 1µA
Max. off-state voltage: 11.1V
Breakdown voltage: 12.4...13.7V
Max. forward impulse current: 33A
Peak pulse power dissipation: 0.6kW
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| P6KE150A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 143...158V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 2.9A
Max. off-state voltage: 128V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 143...158V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 2.9A
Max. off-state voltage: 128V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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| P6KE150A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 143...158V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Max. forward impulse current: 2.9A
Max. off-state voltage: 128V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 143...158V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Max. forward impulse current: 2.9A
Max. off-state voltage: 128V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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| P6KE15A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE15A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE160A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE160A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE180A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE180A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE18A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE200A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 190...210V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 2.2A
Max. off-state voltage: 171V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 190...210V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 2.2A
Max. off-state voltage: 171V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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| P6KE200A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 190...210V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Max. forward impulse current: 2.2A
Max. off-state voltage: 171V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 190...210V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Max. forward impulse current: 2.2A
Max. off-state voltage: 171V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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| P6KE20A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: Ammo Pack
Leakage current: 1µA
Max. forward impulse current: 22A
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Peak pulse power dissipation: 0.6kW
Case: DO15
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: Ammo Pack
Leakage current: 1µA
Max. forward impulse current: 22A
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Peak pulse power dissipation: 0.6kW
Case: DO15
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
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| P6KE20A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Leakage current: 1µA
Max. forward impulse current: 22A
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Peak pulse power dissipation: 0.6kW
Case: DO15
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Leakage current: 1µA
Max. forward impulse current: 22A
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Peak pulse power dissipation: 0.6kW
Case: DO15
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
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| P6KE20CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; Ammo Pack; 0.6kW; P6KE
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Kind of package: Ammo Pack
Leakage current: 1µA
Max. forward impulse current: 22A
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Peak pulse power dissipation: 0.6kW
Case: DO15
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; Ammo Pack; 0.6kW; P6KE
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Kind of package: Ammo Pack
Leakage current: 1µA
Max. forward impulse current: 22A
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Peak pulse power dissipation: 0.6kW
Case: DO15
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
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| P6KE20CA_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Leakage current: 1µA
Max. forward impulse current: 22A
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Peak pulse power dissipation: 0.6kW
Case: DO15
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Leakage current: 1µA
Max. forward impulse current: 22A
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Peak pulse power dissipation: 0.6kW
Case: DO15
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
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| P6KE220A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 209÷231V; 1.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 185V
Breakdown voltage: 209...231V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 209÷231V; 1.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 185V
Breakdown voltage: 209...231V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
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| P6KE24CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8÷25.2V; 18A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Case: DO15
Leakage current: 1µA
Max. forward impulse current: 18A
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Peak pulse power dissipation: 0.6kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8÷25.2V; 18A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Case: DO15
Leakage current: 1µA
Max. forward impulse current: 18A
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Peak pulse power dissipation: 0.6kW
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| P6KE250A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 237...263V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Leakage current: 1µA
Max. forward impulse current: 1.8A
Max. off-state voltage: 214V
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 237...263V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Leakage current: 1µA
Max. forward impulse current: 1.8A
Max. off-state voltage: 214V
Features of semiconductor devices: glass passivated
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| P6KE250A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 237...263V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Leakage current: 1µA
Max. forward impulse current: 1.8A
Max. off-state voltage: 214V
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 237...263V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Leakage current: 1µA
Max. forward impulse current: 1.8A
Max. off-state voltage: 214V
Features of semiconductor devices: glass passivated
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| P6KE27CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE300A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 285÷315V; 1.5A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Breakdown voltage: 285...315V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 1.5A
Max. off-state voltage: 256V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 285÷315V; 1.5A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Breakdown voltage: 285...315V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 1.5A
Max. off-state voltage: 256V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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| P6KE30A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE30A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE350A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 332...368V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 1.3A
Max. off-state voltage: 300V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 332...368V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 1.3A
Max. off-state voltage: 300V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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| P6KE350A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 332...368V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Max. forward impulse current: 1.3A
Max. off-state voltage: 300V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 332...368V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Max. forward impulse current: 1.3A
Max. off-state voltage: 300V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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| P6KE39CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 11.2A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 11.2A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE6.8A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE62CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 58.9÷65.1V; 7.1A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 53V
Breakdown voltage: 58.9...65.1V
Max. forward impulse current: 7.1A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 58.9÷65.1V; 7.1A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 53V
Breakdown voltage: 58.9...65.1V
Max. forward impulse current: 7.1A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE62CA_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 58.9÷65.1V; 7.1A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 53V
Breakdown voltage: 58.9...65.1V
Max. forward impulse current: 7.1A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 58.9÷65.1V; 7.1A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 53V
Breakdown voltage: 58.9...65.1V
Max. forward impulse current: 7.1A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6SMB180A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
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| P6SMB18A-AU_R1_006A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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| P6SMB18A-AU_R2_006A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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| P6SMB18A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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| P6SMB30CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
на замовлення 835 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.46 грн |
| 30+ | 14.22 грн |
| 100+ | 10.77 грн |
| 500+ | 9.17 грн |
| 800+ | 8.83 грн |
| P6SMB30CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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| P6SMB36A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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| P6SMB47A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.7÷49.4V; 9.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7...49.4V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.7÷49.4V; 9.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7...49.4V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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| P6SMB56A-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Application: automotive industry
Leakage current: 1µA
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 0.6kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Application: automotive industry
Leakage current: 1µA
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 0.6kW
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| P6SMB56A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Leakage current: 1µA
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 0.6kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Leakage current: 1µA
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 0.6kW
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| P6SMB56CA-AU_R2_000A1 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Application: automotive industry
Leakage current: 1µA
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 0.6kW
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Application: automotive industry
Leakage current: 1µA
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 0.6kW
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| P6SMB6.8CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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| P6SMBJ100A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷123V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷123V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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| P6SMBJ10A-AU_R2_000A1 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| P6SMBJ10A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| P6SMBJ12A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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