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PJMH190N60E1_T0_00601 PJMH190N60E1_T0_00601 PanJit Semiconductor PJMH190N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 160W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
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PJMH190N65FR2_T0_00601 PanJit Semiconductor PJMH190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMK040N60EC_T0_00201 PanJit Semiconductor PJMK040N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP060N65FR2_T0_00601 PanJit Semiconductor PJMP060N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP120N60EC_T0_00001 PJMP120N60EC_T0_00001 PanJit Semiconductor PJMP120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
на замовлення 197 шт:
термін постачання 14-30 дні (днів)
2+284.83 грн
10+236.60 грн
50+198.58 грн
100+178.30 грн
Мінімальне замовлення: 2
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PJMP125N60FRC_T0_00601 PanJit Semiconductor PJMP125N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
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PJMP130N65EC_T0_00001 PanJit Semiconductor PJMP130N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP190N65FR2_T0_00601 PanJit Semiconductor PJMP190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP210N65EC_T0_00601 PJMP210N65EC_T0_00601 PanJit Semiconductor PJMP210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
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PJMP360N60EC_T0_00001 PJMP360N60EC_T0_00001 PanJit Semiconductor PJMP360N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
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PJP125N06SA-AU_T0_006A1 PanJit Semiconductor PJP125N06SA-AU.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJP18N20_T0_00001 PanJit Semiconductor PJx18N20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
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PJQ4544S6P-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
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PJQ5522-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 141A; Idm: 564A; 37.5W
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 2mΩ
Power dissipation: 37.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 141A
Pulsed drain current: 564A
Application: automotive industry
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PJQ5522S6-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 108A
Application: automotive industry
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PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 PanJit Semiconductor PJQ5544-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 41nC
On-state resistance: 4.3mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
на замовлення 1952 шт:
термін постачання 14-30 дні (днів)
5+111.93 грн
10+66.59 грн
100+52.05 грн
250+43.69 грн
500+39.38 грн
1000+36.42 грн
Мінімальне замовлення: 5
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PJQ5544S6-AU_R2_002A1 PanJit Semiconductor PJQ5544S6-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 101A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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PJQ5544S6V-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 90A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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PJQ5544V-AU_R2_002A1 PJQ5544V-AU_R2_002A1 PanJit Semiconductor PJQ5544V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 94W; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 34nC
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Power dissipation: 94W
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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PJT7807_R1_00001 PanJit Semiconductor PJT7807.pdf Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT363
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
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PJT7808_R1_00001 PanJit Semiconductor PJT7808.pdf Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
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PJX8872B_R1_00001 PanJit Semiconductor PJX8872B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PSMB033N10NS2_R2_00201 PanJit Semiconductor PSMB033N10NS2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Gate-source voltage: 20V
Kind of channel: enhancement
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PSMB055N08NS1_R2_00601 PanJit Semiconductor PSMB055N08NS1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMB055N08NS1_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO247AD-3; TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMP055N08NS1_T0_00601 PSMP055N08NS1_T0_00601 PanJit Semiconductor PSMP055N08NS1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 89 шт:
термін постачання 14-30 дні (днів)
4+136.50 грн
10+74.36 грн
50+67.60 грн
Мінімальне замовлення: 4
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PSMQC040N10NS2_R2_00601 PSMQC040N10NS2_R2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMQC042N10LS2_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PSMQC060N06LS1-AU_R2_006A1 PanJit Semiconductor PSMQC060N06LS1-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PSMQC060N06LS1_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PSMQC120N06LS1-AU_R2_006A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PSMQC120N06LS1_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PZ1AH27B-AU_R1_000A1 PanJit Semiconductor PZ1AH3V6B-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
Application: automotive industry
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PZ1AH27B_R1_00001 PanJit Semiconductor PZ1AH3V6B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
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PZD22B16C-AU_R1_000A1 PanJit Semiconductor PZD22B2V4C-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOT323
Mounting: SMD
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Zener
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PZD22B16C_R1_00001 PanJit Semiconductor PZD22B2V4C_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOT323
Mounting: SMD
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Zener
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PZS1115BES_R1_00001 PZS1115BES_R1_00001 PanJit Semiconductor PZS113V9BES_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 15V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.15W
Zener voltage: 15V
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PZS1117BES_R1_00001 PZS1117BES_R1_00001 PanJit Semiconductor PZS113V9BES_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 17V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 17V
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PZS1125BES_R1_00001 PZS1125BES_R1_00001 PanJit Semiconductor PZS113V9BES_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 25V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 25V
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PZS5115BAS-AU_R1_000A1 PZS5115BAS-AU_R1_000A1 PanJit Semiconductor PZS513V9BAS-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 15V
Application: automotive industry
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PZS5115BCH-AU_R1_000A1 PanJit Semiconductor PZS513V9BCH-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD323HE; single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 15V
Application: automotive industry
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PZS5125BAS-AU_R1_000A1 PZS5125BAS-AU_R1_000A1 PanJit Semiconductor PZS513V9BAS-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 25V
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В кошику  од. на суму  грн.
PZS5125BCH-AU_R1_000A1 PanJit Semiconductor PZS513V9BCH-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD323HE; single diode
Application: automotive industry
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 25V
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PZS5125BCH_R1_00001 PanJit Semiconductor PZS513V9BCH_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD323HE; single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 25V
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В кошику  од. на суму  грн.
PZS51A5V1CS_R1_00001 PZS51A5V1CS_R1_00001 PanJit Semiconductor PZS51A3V9CS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
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В кошику  од. на суму  грн.
RB521S30_R1_00001 RB521S30_R1_00001 PanJit Semiconductor RB521S30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
на замовлення 5933 шт:
термін постачання 14-30 дні (днів)
63+7.28 грн
105+4.06 грн
146+2.90 грн
500+2.18 грн
1000+1.88 грн
2000+1.81 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
RB751S40-AU_R1_000A1 RB751S40-AU_R1_000A1 PanJit Semiconductor RB751S40-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 10µA
Application: automotive industry
на замовлення 2755 шт:
термін постачання 14-30 дні (днів)
50+9.10 грн
82+5.15 грн
124+3.42 грн
500+2.61 грн
1000+2.34 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
RB751S40_R1_00001 RB751S40_R1_00001 PanJit Semiconductor RB751S40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 0.5µA
Power dissipation: 0.2W
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В кошику  од. на суму  грн.
RS1002FL_R1_00001 RS1002FL_R1_00001 PanJit Semiconductor RS1001FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Features of semiconductor devices: fast switching; glass passivated
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
46+10.01 грн
70+6.08 грн
116+3.67 грн
500+3.49 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
RS1004FL_R1_00001 RS1004FL_R1_00001 PanJit Semiconductor RS1001FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: fast switching; glass passivated
на замовлення 2860 шт:
термін постачання 14-30 дні (днів)
46+10.01 грн
75+5.66 грн
123+3.46 грн
500+3.33 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
RS1006FL_R1_00001 RS1006FL_R1_00001 PanJit Semiconductor RS1001FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: fast switching; glass passivated
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RS1008FL_R1_00001 RS1008FL_R1_00001 PanJit Semiconductor RS1001FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: fast switching; glass passivated
на замовлення 2580 шт:
термін постачання 14-30 дні (днів)
34+13.65 грн
54+7.86 грн
100+4.55 грн
500+3.60 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
RS1010FL_R1_00001 RS1010FL_R1_00001 PanJit Semiconductor RS1001FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
на замовлення 1254 шт:
термін постачання 14-30 дні (днів)
39+11.83 грн
63+6.76 грн
106+4.02 грн
500+3.66 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
RS1J_R1_00001 RS1J_R1_00001 PanJit Semiconductor RS1A_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Case: SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
на замовлення 1540 шт:
термін постачання 14-30 дні (днів)
36+12.74 грн
59+7.27 грн
100+5.50 грн
500+4.33 грн
1000+3.82 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
S210L-AU_R2_000A1 S210L-AU_R2_000A1 PanJit Semiconductor Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 2mA
Load current: 2A
Max. forward voltage: 0.74V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
на замовлення 2555 шт:
термін постачання 14-30 дні (днів)
39+11.83 грн
64+6.68 грн
100+6.00 грн
500+5.32 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
SBA340AH_R1_00001 SBA340AH_R1_00001 PanJit Semiconductor SBA320AH_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 50A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 12mA
на замовлення 2929 шт:
термін постачання 14-30 дні (днів)
22+20.93 грн
100+7.18 грн
500+5.41 грн
1000+4.82 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
SBA340AL_R1_00001 SBA340AL_R1_00001 PanJit Semiconductor SBA320AL_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 50A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 12mA
на замовлення 2515 шт:
термін постачання 14-30 дні (днів)
27+17.29 грн
40+10.56 грн
100+7.35 грн
500+5.58 грн
1000+5.24 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
SBM260VAL_R1_00001 SBM260VAL_R1_00001 PanJit Semiconductor SBM260VAL.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 3mA
на замовлення 2320 шт:
термін постачання 14-30 дні (днів)
20+22.75 грн
30+14.28 грн
40+10.82 грн
100+6.93 грн
500+5.41 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SD103AWS_R1_00001 SD103AWS_R1_00001 PanJit Semiconductor SD103AWS_SD103CWS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.35A; reel,tape
Mounting: SMD
Leakage current: 5µA
Load current: 0.35A
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: Schottky switching
на замовлення 724 шт:
термін постачання 14-30 дні (днів)
63+7.28 грн
139+3.04 грн
167+2.54 грн
184+2.31 грн
250+2.27 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
SD103CWS_R1_00001 SD103CWS_R1_00001 PanJit Semiconductor SD103AW_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 20V; 0.35A; reel,tape
Mounting: SMD
Leakage current: 5µA
Load current: 0.35A
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: Schottky switching
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
42+10.92 грн
100+7.78 грн
500+4.93 грн
1000+3.81 грн
2500+2.65 грн
5000+2.21 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
PJMH190N60E1_T0_00601 PJMH190N60E1.pdf
PJMH190N60E1_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 160W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
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PJMH190N65FR2_T0_00601 PJMH190N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMK040N60EC_T0_00201 PJMK040N60EC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP060N65FR2_T0_00601 PJMP060N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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PJMP120N60EC_T0_00001 PJMP120N60EC.pdf
PJMP120N60EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
на замовлення 197 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+284.83 грн
10+236.60 грн
50+198.58 грн
100+178.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PJMP125N60FRC_T0_00601 PJMP125N60FRC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
PJMP130N65EC_T0_00001 PJMP130N65EC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP190N65FR2_T0_00601 PJMP190N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP210N65EC_T0_00601 PJMP210N65EC.pdf
PJMP210N65EC_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
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PJMP360N60EC_T0_00001 PJMP360N60EC.pdf
PJMP360N60EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
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PJP125N06SA-AU_T0_006A1 PJP125N06SA-AU.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJP18N20_T0_00001 PJx18N20.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
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PJQ4544S6P-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
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PJQ5522-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 141A; Idm: 564A; 37.5W
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 2mΩ
Power dissipation: 37.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 141A
Pulsed drain current: 564A
Application: automotive industry
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PJQ5522S6-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 108A
Application: automotive industry
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PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 41nC
On-state resistance: 4.3mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
на замовлення 1952 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+111.93 грн
10+66.59 грн
100+52.05 грн
250+43.69 грн
500+39.38 грн
1000+36.42 грн
Мінімальне замовлення: 5
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PJQ5544S6-AU_R2_002A1 PJQ5544S6-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 101A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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PJQ5544S6V-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 90A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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PJQ5544V-AU_R2_002A1 PJQ5544V-AU.pdf
PJQ5544V-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 94W; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 34nC
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Power dissipation: 94W
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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PJT7807_R1_00001 PJT7807.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT363
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
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PJT7808_R1_00001 PJT7808.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
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PJX8872B_R1_00001 PJX8872B.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PSMB033N10NS2_R2_00201 PSMB033N10NS2.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Gate-source voltage: 20V
Kind of channel: enhancement
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PSMB055N08NS1_R2_00601 PSMB055N08NS1.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMB055N08NS1_T0_00601
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO247AD-3; TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMP055N08NS1_T0_00601 PSMP055N08NS1.pdf
PSMP055N08NS1_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 89 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+136.50 грн
10+74.36 грн
50+67.60 грн
Мінімальне замовлення: 4
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PSMQC040N10NS2_R2_00601
PSMQC040N10NS2_R2_00601
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMQC042N10LS2_R2_00201
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PSMQC060N06LS1-AU_R2_006A1 PSMQC060N06LS1-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PSMQC060N06LS1_R2_00201
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PSMQC120N06LS1-AU_R2_006A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PSMQC120N06LS1_R2_00201
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PZ1AH27B-AU_R1_000A1 PZ1AH3V6B-AU_SER.pdf
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
Application: automotive industry
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PZ1AH27B_R1_00001 PZ1AH3V6B_SER.pdf
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
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PZD22B16C-AU_R1_000A1 PZD22B2V4C-AU_SER.pdf
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOT323
Mounting: SMD
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Zener
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PZD22B16C_R1_00001 PZD22B2V4C_SER.pdf
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOT323
Mounting: SMD
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Zener
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PZS1115BES_R1_00001 PZS113V9BES_SERIES.pdf
PZS1115BES_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 15V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.15W
Zener voltage: 15V
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PZS1117BES_R1_00001 PZS113V9BES_SERIES.pdf
PZS1117BES_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 17V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 17V
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PZS1125BES_R1_00001 PZS113V9BES_SERIES.pdf
PZS1125BES_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 25V; SMD; reel,tape; SOD523; single diode
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 25V
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PZS5115BAS-AU_R1_000A1 PZS513V9BAS-AU_SER.pdf
PZS5115BAS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 15V
Application: automotive industry
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PZS5115BCH-AU_R1_000A1 PZS513V9BCH-AU_SER.pdf
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD323HE; single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 15V
Application: automotive industry
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PZS5125BAS-AU_R1_000A1 PZS513V9BAS-AU_SER.pdf
PZS5125BAS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 25V
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PZS5125BCH-AU_R1_000A1 PZS513V9BCH-AU_SER.pdf
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD323HE; single diode
Application: automotive industry
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 25V
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PZS5125BCH_R1_00001 PZS513V9BCH_SER.pdf
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 25V; SMD; reel,tape; SOD323HE; single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 25V
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PZS51A5V1CS_R1_00001 PZS51A3V9CS_SER.pdf
PZS51A5V1CS_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
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RB521S30_R1_00001 RB521S30.pdf
RB521S30_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
на замовлення 5933 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.28 грн
105+4.06 грн
146+2.90 грн
500+2.18 грн
1000+1.88 грн
2000+1.81 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
RB751S40-AU_R1_000A1 RB751S40-AU.pdf
RB751S40-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 10µA
Application: automotive industry
на замовлення 2755 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.10 грн
82+5.15 грн
124+3.42 грн
500+2.61 грн
1000+2.34 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
RB751S40_R1_00001 RB751S40.pdf
RB751S40_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 0.5µA
Power dissipation: 0.2W
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RS1002FL_R1_00001 RS1001FL_SERIES.pdf
RS1002FL_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Features of semiconductor devices: fast switching; glass passivated
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+10.01 грн
70+6.08 грн
116+3.67 грн
500+3.49 грн
Мінімальне замовлення: 46
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RS1004FL_R1_00001 RS1001FL_SERIES.pdf
RS1004FL_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: fast switching; glass passivated
на замовлення 2860 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+10.01 грн
75+5.66 грн
123+3.46 грн
500+3.33 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
RS1006FL_R1_00001 RS1001FL_SERIES.pdf
RS1006FL_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: fast switching; glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
RS1008FL_R1_00001 RS1001FL_SERIES.pdf
RS1008FL_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: fast switching; glass passivated
на замовлення 2580 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.65 грн
54+7.86 грн
100+4.55 грн
500+3.60 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
RS1010FL_R1_00001 RS1001FL_SERIES.pdf
RS1010FL_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
на замовлення 1254 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.83 грн
63+6.76 грн
106+4.02 грн
500+3.66 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
RS1J_R1_00001 RS1A_SERIES.pdf
RS1J_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Case: SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
на замовлення 1540 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.74 грн
59+7.27 грн
100+5.50 грн
500+4.33 грн
1000+3.82 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
S210L-AU_R2_000A1
S210L-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 2mA
Load current: 2A
Max. forward voltage: 0.74V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
на замовлення 2555 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.83 грн
64+6.68 грн
100+6.00 грн
500+5.32 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
SBA340AH_R1_00001 SBA320AH_SERIES.pdf
SBA340AH_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 50A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 12mA
на замовлення 2929 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
22+20.93 грн
100+7.18 грн
500+5.41 грн
1000+4.82 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
SBA340AL_R1_00001 SBA320AL_SERIES.pdf
SBA340AL_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 50A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 12mA
на замовлення 2515 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
27+17.29 грн
40+10.56 грн
100+7.35 грн
500+5.58 грн
1000+5.24 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
SBM260VAL_R1_00001 SBM260VAL.pdf
SBM260VAL_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 3mA
на замовлення 2320 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.75 грн
30+14.28 грн
40+10.82 грн
100+6.93 грн
500+5.41 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SD103AWS_R1_00001 SD103AWS_SD103CWS.pdf
SD103AWS_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.35A; reel,tape
Mounting: SMD
Leakage current: 5µA
Load current: 0.35A
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: Schottky switching
на замовлення 724 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.28 грн
139+3.04 грн
167+2.54 грн
184+2.31 грн
250+2.27 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
SD103CWS_R1_00001 SD103AW_SERIES.pdf
SD103CWS_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 20V; 0.35A; reel,tape
Mounting: SMD
Leakage current: 5µA
Load current: 0.35A
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Max. off-state voltage: 20V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: Schottky switching
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.92 грн
100+7.78 грн
500+4.93 грн
1000+3.81 грн
2500+2.65 грн
5000+2.21 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
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