Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105892) > Сторінка 140 з 1765
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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RTE002P02TL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 200MA EMT3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RTF010P02TL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 1A TUMT3Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: TUMT3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2483 шт: термін постачання 21-31 дні (днів) |
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RTF015P02TL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 1.5A TUMT3Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 1.5A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TUMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V |
на замовлення 5800 шт: термін постачання 21-31 дні (днів) |
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RTF020P02TL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 2A TUMT3 |
на замовлення 2205 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RTF025N03TL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2.5A TUMT3Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V |
на замовлення 9151 шт: термін постачання 21-31 дні (днів) |
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RTL020P02TR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 2A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TUMT6 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V |
на замовлення 3853 шт: термін постачання 21-31 дні (днів) |
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RTL030P02TR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 3A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TUMT6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 10 V |
на замовлення 2959 шт: термін постачання 21-31 дні (днів) |
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RTL035N03TR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 3.5A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V |
на замовлення 5750 шт: термін постачання 21-31 дні (днів) |
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RTM002P02T2L | Rohm Semiconductor |
Description: MOSFET P-CH 20V 200MA VMT3Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: VMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V |
на замовлення 20958 шт: термін постачання 21-31 дні (днів) |
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RTQ020N03TR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V |
на замовлення 7561 шт: термін постачання 21-31 дні (днів) |
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RTQ025P02TR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 2.5A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RTQ030P02TR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 3A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RTQ035N03TR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 3.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V |
на замовлення 649 шт: термін постачання 21-31 дні (днів) |
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RTQ035P02TR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 3.5A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RTQ040P02TR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 4A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RTQ045N03TR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4.5A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V |
на замовлення 5473 шт: термін постачання 21-31 дні (днів) |
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RTR025N03TL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2.5A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): 12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V |
на замовлення 2685 шт: термін постачання 21-31 дні (днів) |
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RTR025P02TL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 2.5A TSMT3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RTR030P02TL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 3A TSMT3 |
на замовлення 5150 шт: термін постачання 21-31 дні (днів) |
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RTU002P02T106 | Rohm Semiconductor |
Description: MOSFET P-CH 20V 0.25A SOT-323 |
на замовлення 1950 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SP8M10TB | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 7A/4.5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 4.5A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SH8M4TB1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 9A/7A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 7A Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8M5TB | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 6A/7A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 7A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8M6TB | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 5A/3.5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 3.5A Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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US5K3TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 1.5A TUMT5Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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US5U1TR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 1.5A TUMT5Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT5 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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US5U29TR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 1A TUMT5Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TUMT5 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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US6J2TR | Rohm Semiconductor |
Description: MOSFET 2P-CH 20V 1A TUMT6 |
на замовлення 8190 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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US6K1TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 1.5A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT6 |
на замовлення 24843 шт: термін постачання 21-31 дні (днів) |
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US6K2TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 1.4A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT6 |
на замовлення 8837 шт: термін постачання 21-31 дні (днів) |
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US6M1TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V/20V 1.4A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active |
на замовлення 11776 шт: термін постачання 21-31 дні (днів) |
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US6M2TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V/20V 1.5A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active |
на замовлення 53775 шт: термін постачання 21-31 дні (днів) |
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BR93L86F-WE2 | Rohm Semiconductor |
Description: IC EEPROM 16KBIT SPI 2MHZ 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 1K x 16 DigiKey Programmable: Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BR93L86RFVM-WTR | Rohm Semiconductor |
Description: IC EEPROM 16KBIT SPI 2MHZ 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 1K x 16 DigiKey Programmable: Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BR93L86-W | Rohm Semiconductor |
Description: IC EEPROM 16KBIT SPI 2MHZ 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-DIP Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 1K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR93L76F-WE2 | Rohm Semiconductor |
Description: IC EEPROM 8KBIT 2MHZ 8SOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BR93L76RFV-WE2 | Rohm Semiconductor |
Description: IC EEPROM 8KBIT SPI 2MHZ 8SSOPBPackaging: Tape & Reel (TR) Package / Case: 8-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SSOP-B Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 512 x 16 DigiKey Programmable: Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BR93L76RFVM-WTR | Rohm Semiconductor |
Description: IC EEPROM 8K SPI 2MHZ 8MSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BR93L76-W | Rohm Semiconductor |
Description: IC EEPROM 8KBIT 2MHZ 8DIP |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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BR93L86F-WE2 | Rohm Semiconductor |
Description: IC EEPROM 16KBIT SPI 2MHZ 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 1K x 16 DigiKey Programmable: Verified |
на замовлення 2173 шт: термін постачання 21-31 дні (днів) |
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BR93L86RFV-WE2 | Rohm Semiconductor |
Description: IC EEPROM 16K SPI 2MHZ 8SSOPBPackaging: Cut Tape (CT) Package / Case: 8-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SSOP-B Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 1K x 16 DigiKey Programmable: Not Verified |
на замовлення 934 шт: термін постачання 21-31 дні (днів) |
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BR93L86RFVM-WTR | Rohm Semiconductor |
Description: IC EEPROM 16KBIT SPI 2MHZ 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 1K x 16 DigiKey Programmable: Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR93L76F-WE2 | Rohm Semiconductor |
Description: IC EEPROM 8KBIT 2MHZ 8SOP |
на замовлення 1435 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BR93L76RFVM-WTR | Rohm Semiconductor |
Description: IC EEPROM 8K SPI 2MHZ 8MSOP |
на замовлення 276 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BR24L01AFV-WE2 | Rohm Semiconductor |
Description: IC EEPROM 1KBIT I2C 8SSOPBPackaging: Cut Tape (CT) Package / Case: 8-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SSOP-B Part Status: Not For New Designs Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 128 x 8 DigiKey Programmable: Verified |
на замовлення 7690 шт: термін постачання 21-31 дні (днів) |
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BR24L01AFVM-WTR | Rohm Semiconductor |
Description: IC EEPROM 1KBIT I2C 400KHZ 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 128 x 8 DigiKey Programmable: Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR24L02FVM-WTR | Rohm Semiconductor |
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 256 x 8 DigiKey Programmable: Verified |
на замовлення 2019 шт: термін постачання 21-31 дні (днів) |
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BR24L04F-WE2 | Rohm Semiconductor |
Description: IC EEPROM 4KBIT I2C 400KHZ 8SOP |
на замовлення 68 шт: термін постачання 21-31 дні (днів) |
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BR24L04FV-WE2 | Rohm Semiconductor |
Description: IC EEPROM 4KBIT I2C 8SSOPBPackaging: Cut Tape (CT) Package / Case: 8-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SSOP-B Part Status: Not For New Designs Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Memory Organization: 512 x 8 DigiKey Programmable: Verified |
на замовлення 802 шт: термін постачання 21-31 дні (днів) |
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BR24L04FVM-WTR | Rohm Semiconductor |
Description: IC EEPROM 4KBIT I2C 400KHZ 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 512 x 8 DigiKey Programmable: Verified |
на замовлення 2993 шт: термін постачання 21-31 дні (днів) |
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BR24L08F-WE2 | Rohm Semiconductor |
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 1K x 8 DigiKey Programmable: Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR24L08FV-WE2 | Rohm Semiconductor |
Description: IC EEPROM 8KBIT I2C 8SSOPBPackaging: Cut Tape (CT) Package / Case: 8-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SSOP-B Part Status: Not For New Designs Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 1K x 8 DigiKey Programmable: Verified |
на замовлення 2447 шт: термін постачання 21-31 дні (днів) |
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BR24L08FVM-WTR | Rohm Semiconductor |
Description: IC EEPROM 8KBIT I2C 400KHZ 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 1K x 8 DigiKey Programmable: Verified |
на замовлення 5108 шт: термін постачання 21-31 дні (днів) |
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BR24L16FV-WE2 | Rohm Semiconductor |
Description: IC EEPROM 16KBIT I2C 8SSOPBPackaging: Cut Tape (CT) Package / Case: 8-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SSOP-B Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 2K x 8 DigiKey Programmable: Verified |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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BR24L16FVM-WTR | Rohm Semiconductor |
Description: IC EEPROM 16KBIT I2C 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 2K x 8 DigiKey Programmable: Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR24L32F-WE2 | Rohm Semiconductor |
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Memory Organization: 4K x 8 DigiKey Programmable: Verified |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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BR24L32FV-WE2 | Rohm Semiconductor |
Description: IC EEPROM 32KBIT I2C 8SSOPBPackaging: Cut Tape (CT) Package / Case: 8-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SSOP-B Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 4K x 8 DigiKey Programmable: Verified |
на замовлення 169 шт: термін постачання 21-31 дні (днів) |
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BR24L64F-WE2 | Rohm Semiconductor |
Description: IC EEPROM 64KBIT I2C 400KHZ 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 8K x 8 DigiKey Programmable: Verified |
на замовлення 1123 шт: термін постачання 21-31 дні (днів) |
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BR34L02FV-WE2 | Rohm Semiconductor |
Description: IC EEPROM 2KBIT I2C 8SSOPBPackaging: Cut Tape (CT) Package / Case: 8-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SSOP-B Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Memory Organization: 256 x 8 DigiKey Programmable: Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BR93L46FV-WE2 | Rohm Semiconductor |
Description: IC EEPROM 1KBIT SPI 2MHZ 8SSOPBDigiKey Programmable: Verified Memory Organization: 64 x 16 Memory Interface: Microwire Write Cycle Time - Word, Page: 5ms Part Status: Not For New Designs Supplier Device Package: 8-SSOP-B Memory Format: EEPROM Clock Frequency: 2 MHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Kbit Mounting Type: Surface Mount Package / Case: 8-LSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| RTE002P02TL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA EMT3
Description: MOSFET P-CH 20V 200MA EMT3
товару немає в наявності
В кошику
од. на суму грн.
| RTF010P02TL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 1A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 1A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2483 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.61 грн |
| 10+ | 39.71 грн |
| 100+ | 25.84 грн |
| 500+ | 18.64 грн |
| 1000+ | 16.83 грн |
| RTF015P02TL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
Description: MOSFET P-CH 20V 1.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
на замовлення 5800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.64 грн |
| 10+ | 51.92 грн |
| 100+ | 34.04 грн |
| 500+ | 24.75 грн |
| 1000+ | 22.43 грн |
| RTF020P02TL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TUMT3
Description: MOSFET P-CH 20V 2A TUMT3
на замовлення 2205 шт:
термін постачання 21-31 дні (днів)
| RTF025N03TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Description: MOSFET N-CH 30V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
на замовлення 9151 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.74 грн |
| 10+ | 44.21 грн |
| 100+ | 28.95 грн |
| 500+ | 21.01 грн |
| 1000+ | 19.03 грн |
| RTL020P02TR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Description: MOSFET P-CH 20V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
на замовлення 3853 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.26 грн |
| 10+ | 38.56 грн |
| 100+ | 26.50 грн |
| 500+ | 19.70 грн |
| 1000+ | 18.00 грн |
| RTL030P02TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 3A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 10 V
Description: MOSFET P-CH 20V 3A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 10 V
на замовлення 2959 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 52.33 грн |
| 10+ | 43.90 грн |
| 100+ | 30.38 грн |
| 500+ | 23.82 грн |
| 1000+ | 20.27 грн |
| RTL035N03TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Description: MOSFET N-CH 30V 3.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
на замовлення 5750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.06 грн |
| 10+ | 37.34 грн |
| 100+ | 24.22 грн |
| 500+ | 17.44 грн |
| 1000+ | 15.73 грн |
| RTM002P02T2L |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: VMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Description: MOSFET P-CH 20V 200MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: VMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
на замовлення 20958 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.47 грн |
| 11+ | 28.40 грн |
| 100+ | 19.34 грн |
| 500+ | 14.26 грн |
| 1000+ | 11.16 грн |
| 2000+ | 11.13 грн |
| RTQ020N03TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
на замовлення 7561 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.88 грн |
| 10+ | 34.67 грн |
| 100+ | 22.46 грн |
| 500+ | 16.13 грн |
| 1000+ | 14.54 грн |
| RTQ025P02TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V
Description: MOSFET P-CH 20V 2.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V
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од. на суму грн.
| RTQ030P02TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 3A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Description: MOSFET P-CH 20V 3A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
товару немає в наявності
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од. на суму грн.
| RTQ035N03TR |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
на замовлення 649 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.71 грн |
| 10+ | 46.58 грн |
| 100+ | 30.41 грн |
| 500+ | 22.01 грн |
| RTQ035P02TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Description: MOSFET P-CH 20V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
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од. на суму грн.
| RTQ040P02TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 4A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Description: MOSFET P-CH 20V 4A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
товару немає в наявності
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од. на суму грн.
| RTQ045N03TR | ![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
на замовлення 5473 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.43 грн |
| 10+ | 44.97 грн |
| 100+ | 30.67 грн |
| 500+ | 23.54 грн |
| 1000+ | 21.26 грн |
| RTR025N03TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
на замовлення 2685 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.65 грн |
| 10+ | 32.53 грн |
| 100+ | 22.59 грн |
| 500+ | 16.55 грн |
| 1000+ | 13.45 грн |
| RTR025P02TL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A TSMT3
Description: MOSFET P-CH 20V 2.5A TSMT3
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| RTR030P02TL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 3A TSMT3
Description: MOSFET P-CH 20V 3A TSMT3
на замовлення 5150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.95 грн |
| 10+ | 41.16 грн |
| 100+ | 30.75 грн |
| 500+ | 22.67 грн |
| 1000+ | 17.52 грн |
| RTU002P02T106 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 0.25A SOT-323
Description: MOSFET P-CH 20V 0.25A SOT-323
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
| SP8M10TB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 7A/4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 7A/4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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| SH8M4TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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| SP8M5TB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 6A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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| SP8M6TB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A/3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 5A/3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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| US5U1TR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.5A TUMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT5
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
Description: MOSFET N-CH 30V 1.5A TUMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT5
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.99 грн |
| 10+ | 38.71 грн |
| 100+ | 26.81 грн |
| 500+ | 21.02 грн |
| 1000+ | 17.89 грн |
| US5U29TR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 1A TUMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT5
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Description: MOSFET P-CH 20V 1A TUMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT5
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
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| US6J2TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 1A TUMT6
Description: MOSFET 2P-CH 20V 1A TUMT6
на замовлення 8190 шт:
термін постачання 21-31 дні (днів)
| US6K1TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Description: MOSFET 2N-CH 30V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
на замовлення 24843 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.82 грн |
| 10+ | 35.20 грн |
| 100+ | 24.35 грн |
| 500+ | 19.10 грн |
| 1000+ | 16.25 грн |
| US6K2TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 1.4A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Description: MOSFET 2N-CH 30V 1.4A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
на замовлення 8837 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 45.20 грн |
| 10+ | 37.87 грн |
| 100+ | 26.20 грн |
| 500+ | 20.54 грн |
| 1000+ | 17.48 грн |
| US6M1TR |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.4A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Description: MOSFET N/P-CH 30V/20V 1.4A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
на замовлення 11776 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.29 грн |
| 10+ | 47.57 грн |
| 100+ | 31.09 грн |
| 500+ | 22.53 грн |
| 1000+ | 20.39 грн |
| US6M2TR |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Description: MOSFET N/P-CH 30V/20V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
на замовлення 53775 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.88 грн |
| 10+ | 48.49 грн |
| 50+ | 35.81 грн |
| 100+ | 29.75 грн |
| 500+ | 22.97 грн |
| BR93L86F-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT SPI 2MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT SPI 2MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
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| BR93L86RFVM-WTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT SPI 2MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT SPI 2MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| BR93L86-W |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT SPI 2MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT SPI 2MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Not Verified
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| BR93L76F-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT 2MHZ 8SOP
Description: IC EEPROM 8KBIT 2MHZ 8SOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BR93L76RFV-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT SPI 2MHZ 8SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 512 x 16
DigiKey Programmable: Verified
Description: IC EEPROM 8KBIT SPI 2MHZ 8SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 512 x 16
DigiKey Programmable: Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 41.63 грн |
| BR93L76RFVM-WTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8K SPI 2MHZ 8MSOP
Description: IC EEPROM 8K SPI 2MHZ 8MSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| BR93L76-W |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT 2MHZ 8DIP
Description: IC EEPROM 8KBIT 2MHZ 8DIP
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BR93L86F-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT SPI 2MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT SPI 2MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Verified
на замовлення 2173 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.71 грн |
| 10+ | 48.49 грн |
| 25+ | 47.89 грн |
| 50+ | 44.67 грн |
| 100+ | 39.94 грн |
| 250+ | 39.61 грн |
| 500+ | 38.38 грн |
| 1000+ | 37.01 грн |
| BR93L86RFV-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16K SPI 2MHZ 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 16K SPI 2MHZ 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Not Verified
на замовлення 934 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.75 грн |
| 10+ | 44.97 грн |
| 25+ | 44.38 грн |
| 50+ | 41.40 грн |
| 100+ | 37.02 грн |
| 250+ | 36.71 грн |
| 500+ | 35.57 грн |
| BR93L86RFVM-WTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT SPI 2MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT SPI 2MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Verified
товару немає в наявності
В кошику
од. на суму грн.
| BR93L76F-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT 2MHZ 8SOP
Description: IC EEPROM 8KBIT 2MHZ 8SOP
на замовлення 1435 шт:
термін постачання 21-31 дні (днів)
| BR93L76RFVM-WTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8K SPI 2MHZ 8MSOP
Description: IC EEPROM 8K SPI 2MHZ 8MSOP
на замовлення 276 шт:
термін постачання 21-31 дні (днів)
| BR24L01AFV-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT I2C 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 128 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 1KBIT I2C 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 128 x 8
DigiKey Programmable: Verified
на замовлення 7690 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.30 грн |
| 11+ | 30.24 грн |
| 25+ | 29.50 грн |
| 50+ | 27.09 грн |
| 100+ | 26.51 грн |
| 250+ | 25.73 грн |
| 500+ | 24.72 грн |
| 1000+ | 24.14 грн |
| BR24L01AFVM-WTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT I2C 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 128 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 1KBIT I2C 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 128 x 8
DigiKey Programmable: Verified
товару немає в наявності
В кошику
од. на суму грн.
| BR24L02FVM-WTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 256 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 256 x 8
DigiKey Programmable: Verified
на замовлення 2019 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.54 грн |
| 25+ | 29.75 грн |
| 50+ | 27.36 грн |
| 100+ | 26.76 грн |
| 250+ | 25.98 грн |
| 500+ | 24.97 грн |
| 1000+ | 24.38 грн |
| BR24L04F-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT I2C 400KHZ 8SOP
Description: IC EEPROM 4KBIT I2C 400KHZ 8SOP
на замовлення 68 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.82 грн |
| 25+ | 23.06 грн |
| 50+ | 21.50 грн |
| BR24L04FV-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT I2C 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT I2C 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Memory Organization: 512 x 8
DigiKey Programmable: Verified
на замовлення 802 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.95 грн |
| 10+ | 43.52 грн |
| 25+ | 42.97 грн |
| 50+ | 40.09 грн |
| 100+ | 35.84 грн |
| 250+ | 35.54 грн |
| 500+ | 34.44 грн |
| BR24L04FVM-WTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT I2C 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT I2C 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 512 x 8
DigiKey Programmable: Verified
на замовлення 2993 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.58 грн |
| 10+ | 41.16 грн |
| 25+ | 39.25 грн |
| 50+ | 35.54 грн |
| 100+ | 34.29 грн |
| 250+ | 32.71 грн |
| 500+ | 31.04 грн |
| 1000+ | 29.94 грн |
| BR24L08F-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 1K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 1K x 8
DigiKey Programmable: Verified
товару немає в наявності
В кошику
од. на суму грн.
| BR24L08FV-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 1K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 8KBIT I2C 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 1K x 8
DigiKey Programmable: Verified
на замовлення 2447 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.54 грн |
| 10+ | 43.98 грн |
| 25+ | 41.90 грн |
| 50+ | 37.92 грн |
| 100+ | 36.59 грн |
| 250+ | 34.89 грн |
| 500+ | 33.11 грн |
| 1000+ | 31.94 грн |
| BR24L08FVM-WTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 1K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 8KBIT I2C 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 1K x 8
DigiKey Programmable: Verified
на замовлення 5108 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.54 грн |
| 10+ | 43.98 грн |
| 25+ | 41.90 грн |
| 50+ | 37.92 грн |
| 100+ | 36.59 грн |
| 250+ | 34.89 грн |
| 500+ | 33.11 грн |
| 1000+ | 31.94 грн |
| BR24L16FV-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT I2C 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Verified
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.54 грн |
| 10+ | 45.36 грн |
| 25+ | 44.78 грн |
| 50+ | 41.78 грн |
| BR24L16FVM-WTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT I2C 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Verified
товару немає в наявності
В кошику
од. на суму грн.
| BR24L32F-WE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Memory Organization: 4K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Memory Organization: 4K x 8
DigiKey Programmable: Verified
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.06 грн |
| 10+ | 53.30 грн |
| BR24L32FV-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 32KBIT I2C 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Verified
на замовлення 169 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.29 грн |
| 10+ | 67.58 грн |
| 25+ | 64.44 грн |
| 50+ | 58.34 грн |
| 100+ | 56.28 грн |
| BR24L64F-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 64KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Verified
на замовлення 1123 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.29 грн |
| 10+ | 69.41 грн |
| 25+ | 68.51 грн |
| 50+ | 63.92 грн |
| 100+ | 57.15 грн |
| 250+ | 56.67 грн |
| 500+ | 54.91 грн |
| 1000+ | 52.95 грн |
| BR34L02FV-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Memory Organization: 256 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 2KBIT I2C 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Memory Organization: 256 x 8
DigiKey Programmable: Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| BR93L46FV-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT SPI 2MHZ 8SSOPB
DigiKey Programmable: Verified
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Not For New Designs
Supplier Device Package: 8-SSOP-B
Memory Format: EEPROM
Clock Frequency: 2 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 1KBIT SPI 2MHZ 8SSOPB
DigiKey Programmable: Verified
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Not For New Designs
Supplier Device Package: 8-SSOP-B
Memory Format: EEPROM
Clock Frequency: 2 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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