Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102220) > Сторінка 141 з 1704

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SIR-341ST3FF SIR-341ST3FF Rohm Semiconductor SIR-34st3F.pdf Description: EMITTER IR 940NM 75MA T-1
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SIR-505STA47F SIR-505STA47F Rohm Semiconductor sir-505sta47[1].pdf Description: EMITTER IR 950NM 100MA T 1 3/4
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RPM-012PBT87 RPM-012PBT87 Rohm Semiconductor RPM-012PB.pdf Description: SENSOR PHOTO 800NM SIDE VIEW SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Wavelength: 800nm
Mounting Type: Surface Mount
Orientation: Side View
Operating Temperature: -30°C ~ 85°C (TA)
Viewing Angle: 24°
Current - Dark (Id) (Max): 500 µA
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 75 mW
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SLR343ECT3F SLR343ECT3F Rohm Semiconductor datasheet?p=SLR343ECT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED BLUE-GREEN CLEAR T-1 T/H
Packaging: Bulk
Package / Case: Radial
Color: Blue-Green
Mounting Type: Through Hole
Millicandela Rating: 2200mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.3V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.60mm
Wavelength - Dominant: 527nm
Supplier Device Package: T-1
Lens Transparency: Clear
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 3.10mm Dia
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SML312ECTT86 SML312ECTT86 Rohm Semiconductor SML-31.pdf Description: LED BLUE-GREEN CLEAR 0603 SMD
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SML312ECTT86 SML312ECTT86 Rohm Semiconductor SML-31.pdf Description: LED BLUE-GREEN CLEAR 0603 SMD
на замовлення 308 шт:
термін постачання 21-31 дні (днів)
3+139.40 грн
10+84.99 грн
100+62.91 грн
Мінімальне замовлення: 3
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2SK2095N 2SK2095N Rohm Semiconductor 2SK2095N.pdf Description: MOSFET N-CH 60V 10A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220FN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
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2SK2299N 2SK2299N Rohm Semiconductor 2SK2299N.pdf Description: MOSFET N-CH 450V 7A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
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2SK2713 2SK2713 Rohm Semiconductor 2SK2713.pdf Description: MOSFET N-CH 450V 5A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
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2SK2740 2SK2740 Rohm Semiconductor 2SK2740.pdf Description: MOSFET N-CH 600V 7A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V
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QS5U12TR QS5U12TR Rohm Semiconductor datasheet?p=QS5U12&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
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QS5U13TR QS5U13TR Rohm Semiconductor datasheet?p=QS5U13&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
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QS5U16TR QS5U16TR Rohm Semiconductor datasheet?p=QS5U16&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT5
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
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QS5U17TR QS5U17TR Rohm Semiconductor datasheet?p=QS5U17&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+19.35 грн
Мінімальне замовлення: 3000
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QS5U21TR QS5U21TR Rohm Semiconductor qs5u21tr-e.pdf Description: MOSFET P-CH 20V 1.5A TSMT5
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QS5U23TR QS5U23TR Rohm Semiconductor qs5u23tr-e.pdf Description: MOSFET P-CH 20V 1.5A TSMT5
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QS5U26TR QS5U26TR Rohm Semiconductor qs5u26tr-e.pdf Description: MOSFET P-CH 20V 1.5A TSMT5
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QS5U27TR QS5U27TR Rohm Semiconductor datasheet?p=QS5U27&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 1.5A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 10 V
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QS5U28TR QS5U28TR Rohm Semiconductor datasheet?p=QS5U28&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 2A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V
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QS6J3TR QS6J3TR Rohm Semiconductor QS6J3.pdf Description: MOSFET 2P-CH 20V 1.5A TSMT6
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QS6M3TR QS6M3TR Rohm Semiconductor QS6M3.pdf Description: MOSFET N/P-CH 30V/20V 1.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+15.70 грн
6000+13.90 грн
Мінімальне замовлення: 3000
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QS6M4TR QS6M4TR Rohm Semiconductor datasheet?p=QS6M4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V/20V 1.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+17.13 грн
6000+15.63 грн
Мінімальне замовлення: 3000
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QS6U22TR QS6U22TR Rohm Semiconductor qs6u22tr-e.pdf Description: MOSFET P-CH 20V 1.5A TSMT6
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QS6U24TR QS6U24TR Rohm Semiconductor datasheet?p=QS6U24&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+17.47 грн
6000+15.94 грн
Мінімальне замовлення: 3000
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RDN100N20 RDN100N20 Rohm Semiconductor RDN100N20.pdf Description: MOSFET N-CH 200V 10A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 10 V
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RDN120N25 RDN120N25 Rohm Semiconductor RDN120N25.pdf Description: MOSFET N-CH 250V 12A TO-220FN
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RHK003N06T146 RHK003N06T146 Rohm Semiconductor RHK003N06.pdf Description: MOSFET N-CH 60V 300MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
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RHK005N03T146 RHK005N03T146 Rohm Semiconductor RHK005N03.pdf Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
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RHP020N06T100 RHP020N06T100 Rohm Semiconductor datasheet?p=RHP020N06&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 10 V
на замовлення 106000 шт:
термін постачання 21-31 дні (днів)
1000+21.27 грн
2000+18.72 грн
3000+17.82 грн
5000+16.71 грн
Мінімальне замовлення: 1000
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RHP030N03T100 RHP030N03T100 Rohm Semiconductor datasheet?p=RHP030N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1000+24.42 грн
2000+21.44 грн
3000+20.38 грн
5000+18.01 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
RHU003N03T106 RHU003N03T106 Rohm Semiconductor RHU003N03.pdf Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
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RJK005N03T146 RJK005N03T146 Rohm Semiconductor RJK005N03.pdf Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+7.99 грн
6000+7.06 грн
9000+6.74 грн
15000+5.98 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RJP020N06T100 RJP020N06T100 Rohm Semiconductor datasheet?p=RJP020N06&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
1000+30.74 грн
2000+27.15 грн
3000+25.90 грн
5000+22.99 грн
7000+22.21 грн
10000+21.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
RJU002N06T106 RJU002N06T106 Rohm Semiconductor RJU002N06.pdf Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 200mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 10 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
3000+7.15 грн
6000+6.31 грн
9000+6.02 грн
15000+5.34 грн
21000+5.15 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RJU003N03T106 RJU003N03T106 Rohm Semiconductor RJU003N03.pdf Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 300mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: UMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
3000+6.05 грн
6000+5.27 грн
9000+4.98 грн
15000+4.38 грн
21000+4.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RSE002P03TL RSE002P03TL Rohm Semiconductor RSE002P03 Description: MOSFET P-CH 30V 200MA SOT416
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RSF014N03TL RSF014N03TL Rohm Semiconductor rsf014n03tl-e.pdf Description: MOSFET N-CH 30V 1.4A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 10 V
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RSM002P03T2L RSM002P03T2L Rohm Semiconductor rsm002p03-e.pdf Description: MOSFET P-CH 30V 200MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+12.32 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
RSQ045N03TR RSQ045N03TR Rohm Semiconductor rsq045n03.pdf Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
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RSR015P03TL RSR015P03TL Rohm Semiconductor RSR015P03.pdf Description: MOSFET P-CH 30V 1.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+15.61 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RSR020P03TL RSR020P03TL Rohm Semiconductor RSR020P03.pdf Description: MOSFET P-CH 30V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
товару немає в наявності
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RSR025P03TL RSR025P03TL Rohm Semiconductor RSR025P03.pdf Description: MOSFET P-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
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RSU002P03T106 RSU002P03T106 Rohm Semiconductor datasheet?p=RSU002P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 250MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+9.11 грн
6000+8.07 грн
9000+7.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RTE002P02TL RTE002P02TL Rohm Semiconductor RTE002P02.pdf Description: MOSFET P-CH 20V 0.2A SOT416
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
RTF010P02TL RTF010P02TL Rohm Semiconductor RTF010P02.pdf Description: MOSFET P-CH 20V 1A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
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RTF015N03TL RTF015N03TL Rohm Semiconductor datasheet?p=RTF015N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 1.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
товару немає в наявності
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RTF015P02TL RTF015P02TL Rohm Semiconductor RTF015P02.pdf Description: MOSFET P-CH 20V 1.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+18.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RTF020P02TL RTF020P02TL Rohm Semiconductor rtf020p02.pdf Description: MOSFET P-CH 20V 2A TUMT3
товару немає в наявності
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RTF025N03TL RTF025N03TL Rohm Semiconductor datasheet?p=RTF025N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+18.98 грн
6000+17.08 грн
9000+15.82 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RTL035N03TR RTL035N03TR Rohm Semiconductor datasheet?p=RTL035N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 3.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+13.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RTQ020N03TR RTQ020N03TR Rohm Semiconductor datasheet?p=RTQ020N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+14.66 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RTQ025P02TR RTQ025P02TR Rohm Semiconductor RTQ025P02.pdf Description: MOSFET P-CH 20V 2.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V
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RTQ030P02TR RTQ030P02TR Rohm Semiconductor RTQ030P02.pdf Description: MOSFET P-CH 20V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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RTQ035N03TR RTQ035N03TR Rohm Semiconductor Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
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RTQ035P02TR RTQ035P02TR Rohm Semiconductor RTQ035P02.pdf Description: MOSFET P-CH 20V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
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RTQ040P02TR RTQ040P02TR Rohm Semiconductor RTQ040P02.pdf Description: MOSFET P-CH 20V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
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RTQ045N03TR RTQ045N03TR Rohm Semiconductor description Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+21.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RTR020P02TL RTR020P02TL Rohm Semiconductor RTR020P02.pdf Description: MOSFET P-CH 20V 2A TSMT3
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
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RTR025N03TL RTR025N03TL Rohm Semiconductor datasheet?p=RTR025N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
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RTR025P02TL RTR025P02TL Rohm Semiconductor RTR025P02.pdf Description: MOSFET P-CH 20V 2.5A TSMT3
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SIR-341ST3FF SIR-34st3F.pdf
SIR-341ST3FF
Виробник: Rohm Semiconductor
Description: EMITTER IR 940NM 75MA T-1
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SIR-505STA47F sir-505sta47[1].pdf
SIR-505STA47F
Виробник: Rohm Semiconductor
Description: EMITTER IR 950NM 100MA T 1 3/4
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RPM-012PBT87 RPM-012PB.pdf
RPM-012PBT87
Виробник: Rohm Semiconductor
Description: SENSOR PHOTO 800NM SIDE VIEW SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Wavelength: 800nm
Mounting Type: Surface Mount
Orientation: Side View
Operating Temperature: -30°C ~ 85°C (TA)
Viewing Angle: 24°
Current - Dark (Id) (Max): 500 µA
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 75 mW
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SLR343ECT3F datasheet?p=SLR343ECT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SLR343ECT3F
Виробник: Rohm Semiconductor
Description: LED BLUE-GREEN CLEAR T-1 T/H
Packaging: Bulk
Package / Case: Radial
Color: Blue-Green
Mounting Type: Through Hole
Millicandela Rating: 2200mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.3V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.60mm
Wavelength - Dominant: 527nm
Supplier Device Package: T-1
Lens Transparency: Clear
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 3.10mm Dia
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SML312ECTT86 SML-31.pdf
SML312ECTT86
Виробник: Rohm Semiconductor
Description: LED BLUE-GREEN CLEAR 0603 SMD
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SML312ECTT86 SML-31.pdf
SML312ECTT86
Виробник: Rohm Semiconductor
Description: LED BLUE-GREEN CLEAR 0603 SMD
на замовлення 308 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+139.40 грн
10+84.99 грн
100+62.91 грн
Мінімальне замовлення: 3
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2SK2095N 2SK2095N.pdf
2SK2095N
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 10A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220FN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
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2SK2299N 2SK2299N.pdf
2SK2299N
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 450V 7A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
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2SK2713 2SK2713.pdf
2SK2713
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 450V 5A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
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2SK2740 2SK2740.pdf
2SK2740
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V
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QS5U12TR datasheet?p=QS5U12&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5U12TR
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
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QS5U13TR datasheet?p=QS5U13&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5U13TR
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
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QS5U16TR datasheet?p=QS5U16&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5U16TR
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT5
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
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QS5U17TR datasheet?p=QS5U17&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5U17TR
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+19.35 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
QS5U21TR qs5u21tr-e.pdf
QS5U21TR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TSMT5
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QS5U23TR qs5u23tr-e.pdf
QS5U23TR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TSMT5
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QS5U26TR qs5u26tr-e.pdf
QS5U26TR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TSMT5
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QS5U27TR datasheet?p=QS5U27&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5U27TR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 10 V
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QS5U28TR datasheet?p=QS5U28&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5U28TR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V
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QS6J3TR QS6J3.pdf
QS6J3TR
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 1.5A TSMT6
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QS6M3TR QS6M3.pdf
QS6M3TR
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+15.70 грн
6000+13.90 грн
Мінімальне замовлення: 3000
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QS6M4TR datasheet?p=QS6M4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS6M4TR
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+17.13 грн
6000+15.63 грн
Мінімальне замовлення: 3000
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QS6U22TR qs6u22tr-e.pdf
QS6U22TR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TSMT6
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QS6U24TR datasheet?p=QS6U24&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS6U24TR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+17.47 грн
6000+15.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RDN100N20 RDN100N20.pdf
RDN100N20
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 200V 10A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 10 V
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RDN120N25 RDN120N25.pdf
RDN120N25
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 12A TO-220FN
товару немає в наявності
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RHK003N06T146 RHK003N06.pdf
RHK003N06T146
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 300MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
товару немає в наявності
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RHK005N03T146 RHK005N03.pdf
RHK005N03T146
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
товару немає в наявності
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RHP020N06T100 datasheet?p=RHP020N06&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RHP020N06T100
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 10 V
на замовлення 106000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+21.27 грн
2000+18.72 грн
3000+17.82 грн
5000+16.71 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
RHP030N03T100 datasheet?p=RHP030N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RHP030N03T100
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+24.42 грн
2000+21.44 грн
3000+20.38 грн
5000+18.01 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
RHU003N03T106 RHU003N03.pdf
RHU003N03T106
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
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RJK005N03T146 RJK005N03.pdf
RJK005N03T146
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.99 грн
6000+7.06 грн
9000+6.74 грн
15000+5.98 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RJP020N06T100 datasheet?p=RJP020N06&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RJP020N06T100
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+30.74 грн
2000+27.15 грн
3000+25.90 грн
5000+22.99 грн
7000+22.21 грн
10000+21.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
RJU002N06T106 RJU002N06.pdf
RJU002N06T106
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 200mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 10 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.15 грн
6000+6.31 грн
9000+6.02 грн
15000+5.34 грн
21000+5.15 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RJU003N03T106 RJU003N03.pdf
RJU003N03T106
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 300mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: UMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.05 грн
6000+5.27 грн
9000+4.98 грн
15000+4.38 грн
21000+4.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RSE002P03TL RSE002P03
RSE002P03TL
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 200MA SOT416
товару немає в наявності
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RSF014N03TL rsf014n03tl-e.pdf
RSF014N03TL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.4A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 10 V
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RSM002P03T2L rsm002p03-e.pdf
RSM002P03T2L
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 200MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+12.32 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
RSQ045N03TR rsq045n03.pdf
RSQ045N03TR
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
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RSR015P03TL RSR015P03.pdf
RSR015P03TL
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+15.61 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RSR020P03TL RSR020P03.pdf
RSR020P03TL
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
товару немає в наявності
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RSR025P03TL RSR025P03.pdf
RSR025P03TL
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
товару немає в наявності
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RSU002P03T106 datasheet?p=RSU002P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSU002P03T106
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 250MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.11 грн
6000+8.07 грн
9000+7.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RTE002P02TL RTE002P02.pdf
RTE002P02TL
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 0.2A SOT416
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
RTF010P02TL RTF010P02.pdf
RTF010P02TL
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 1A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
товару немає в наявності
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RTF015N03TL datasheet?p=RTF015N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTF015N03TL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
товару немає в наявності
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RTF015P02TL RTF015P02.pdf
RTF015P02TL
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+18.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RTF020P02TL rtf020p02.pdf
RTF020P02TL
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TUMT3
товару немає в наявності
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RTF025N03TL datasheet?p=RTF025N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTF025N03TL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+18.98 грн
6000+17.08 грн
9000+15.82 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RTL035N03TR datasheet?p=RTL035N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTL035N03TR
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RTQ020N03TR datasheet?p=RTQ020N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ020N03TR
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.66 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RTQ025P02TR RTQ025P02.pdf
RTQ025P02TR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V
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RTQ030P02TR RTQ030P02.pdf
RTQ030P02TR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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RTQ035N03TR
RTQ035N03TR
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
товару немає в наявності
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RTQ035P02TR RTQ035P02.pdf
RTQ035P02TR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
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RTQ040P02TR RTQ040P02.pdf
RTQ040P02TR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
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RTQ045N03TR description
RTQ045N03TR
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+21.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RTR020P02TL RTR020P02.pdf
RTR020P02TL
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TSMT3
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
RTR025N03TL datasheet?p=RTR025N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR025N03TL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
товару немає в наявності
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RTR025P02TL RTR025P02.pdf
RTR025P02TL
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A TSMT3
товару немає в наявності
В кошику  од. на суму  грн.
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