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Мінімальне замовлення: 1000
Мінімальне замовлення: 34
Мінімальне замовлення: 4
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Мінімальне замовлення: 10
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Мінімальне замовлення: 1000
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Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FGH40N60SFD Код товару: 201597 |
China |
Транзистори > IGBT Корпус: TO-247 Vces: 600 V Vce: 2,3 V Ic 25: 80 A Ic 100: 40 A |
у наявності: 67 шт
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FGH40N60SFD (FGH40N60SFDTU) Код товару: 79400 |
FAIR |
Транзистори > IGBT Корпус: TO-247 Vces: 600 V Vce: 2,3 V Ic 25: 80 A Ic 100: 40 A |
у наявності: 1 шт
очікується:
300 шт
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FGH40N60SMD Код товару: 63296 |
FAIR/ON |
Транзистори > IGBT Корпус: TO-247 Vces: 600 V Vce: 2,1 V Ic 25: 80 A Ic 100: 40 A Pd 25: 349 W td(on)/td(off) 100-150 град: 12/92 |
у наявності: 138 шт
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AIGW40N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 92nC Kind of package: tube Manufacturer series: H5 Turn-on time: 31ns Turn-off time: 160ns |
на замовлення 210 шт: термін постачання 21-30 дні (днів) |
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AIGW40N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 92nC Kind of package: tube Manufacturer series: H5 Turn-on time: 31ns Turn-off time: 160ns кількість в упаковці: 1 шт |
на замовлення 210 шт: термін постачання 7-14 дні (днів) |
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AIKB40N65DH5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 40A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AIKB40N65DH5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 40A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V |
на замовлення 2954 шт: термін постачання 21-31 дні (днів) |
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BIDW40N65ES5 | Bourns Inc. |
Description: IGBT TRENCH FS 650V 80A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 106 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/150ns Switching Energy: 580µJ (on), 630µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 107 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 230 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BIDW40N65H5 | Bourns Inc. |
Description: IGBT TRENCH FS 650V 80A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 165 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/116ns Switching Energy: 1.9mJ (on), 0.52mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 111 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BSPQ000603040N6B00 | Pulse Electronics |
Description: FIXED IND 0.6NH 1.1A 40MOHM SMD Packaging: Cut Tape (CT) Tolerance: ±0.1nH Package / Case: 0201 (0603 Metric) Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Thick Film Operating Temperature: -55°C ~ 125°C DC Resistance (DCR): 40mOhm Max Q @ Freq: 20 @ 500MHz Frequency - Self Resonant: 20GHz Material - Core: Ceramic Inductance Frequency - Test: 500 MHz Supplier Device Package: 0201 Height - Seated (Max): 0.017" (0.43mm) Part Status: Active Inductance: 0.6 nH Current Rating (Amps): 1.1 A |
на замовлення 14380 шт: термін постачання 21-31 дні (днів) |
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FCH040N65S3-F155 | onsemi |
Description: MOSFET N-CH 650V 65A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 6.5mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V |
на замовлення 1137 шт: термін постачання 21-31 дні (днів) |
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FGA40N65SMD | onsemi |
Description: IGBT FIELD STOP 650V 80A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-3PN IGBT Type: Field Stop Td (on/off) @ 25°C: 12ns/92ns Switching Energy: 820µJ (on), 260µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 119 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 349 W |
на замовлення 442 шт: термін постачання 21-31 дні (днів) |
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FGAF40N60SMD | ON-Semicoductor |
IGBT 600V 80A 115W FGAF40N60SMD TFGAF40N60smd кількість в упаковці: 2 шт |
на замовлення 22 шт: термін постачання 28-31 дні (днів) |
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FGH40N60SFD | Fairchaild | IGBT транзистор - [TO-247-3]; Uкэ.макс 600 V, 40 A Field Stop |
на замовлення 2 шт: термін постачання 2-3 дні (днів) |
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FGH40N60SFDTU | ON Semiconductor | Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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FGH40N60SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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FGH40N60SMD-F085 | onsemi |
Description: IGBT 600V 80A 349W TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 18ns/110ns Switching Energy: 920µJ (on), 300µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 180 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 349 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 241 шт: термін постачання 21-31 дні (днів) |
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FGH40N60SMD-F085 | ON Semiconductor | Trans IGBT Chip N-CH 600V 80A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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FGH40N60UFDTU | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 103 шт: термін постачання 21-30 дні (днів) |
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FGH40N60UFDTU | ON Semiconductor | Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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FGH40N60UFDTU | onsemi |
Description: IGBT FIELD STOP 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 45 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 24ns/112ns Switching Energy: 1.19mJ (on), 460µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 290 W |
на замовлення 1193 шт: термін постачання 21-31 дні (днів) |
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FGH40N65UFDTU | ON-Semicoductor |
IGBT 650V 80A 290W FGH40N65UFDTU TFGH40N65ufdtu кількість в упаковці: 2 шт |
на замовлення 51 шт: термін постачання 28-31 дні (днів) |
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HGTG40N60A4 | ON-Semicoductor |
Trans IGBT Chip N-CH 600V 75A 625000mW 3-Pin(3+Tab) TO-247 HGTG40N60A4 THGTG40n60a4 кількість в упаковці: 2 шт |
на замовлення 19 шт: термін постачання 28-31 дні (днів) |
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IGP40N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 45A Power dissipation: 125W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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IGP40N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 45A Power dissipation: 125W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 7-14 дні (днів) |
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IGP40N65F5XKSA1 | Infineon Technologies |
Description: IGBT 650V 74A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO220-3 Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 360µJ (on), 100µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 255 W |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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IGP40N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 74A Power dissipation: 250W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H5 |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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IGP40N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 74A Power dissipation: 250W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H5 кількість в упаковці: 1 шт |
на замовлення 43 шт: термін постачання 7-14 дні (днів) |
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IGP40N65H5XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-220 Tube |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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IGP40N65H5XKSA1 | Infineon Technologies |
Description: IGBT 650V 74A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO220-3-1 Td (on/off) @ 25°C: 22ns/165ns Switching Energy: 390µJ (on), 120µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 255 W |
на замовлення 991 шт: термін постачання 21-31 дні (днів) |
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IGW40N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 306W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H3 кількість в упаковці: 1 шт |
товар відсутній |
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IGW40N60H3FKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/197ns Switching Energy: 1.68mJ Test Condition: 400V, 40A, 7.9Ohm, 15V Gate Charge: 223 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 306 W |
на замовлення 168 шт: термін постачання 21-31 дні (днів) |
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IGW40N60H3FKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247 Tube |
на замовлення 185 шт: термін постачання 21-31 дні (днів) |
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IGW40N60H3FKSA1 | Infineon |
IGBT 600V 80A 306W IGW40N60H3FKSA1 TIGW40n60h3 кількість в упаковці: 5 шт |
на замовлення 5 шт: термін постачання 28-31 дні (днів) |
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IGW40N60TPXKSA1 | Infineon Technologies |
Description: IGBT TRENCH/FS 600V 67A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/222ns Switching Energy: 1.06mJ (on), 610µJ (off) Test Condition: 400V, 40A, 10.1Ohm, 15V Gate Charge: 177 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 246 W |
на замовлення 382 шт: термін постачання 21-31 дні (днів) |
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IGW40N65F5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Kind of package: tube Manufacturer series: F5 |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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IGW40N65F5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Kind of package: tube Manufacturer series: F5 кількість в упаковці: 1 шт |
на замовлення 15 шт: термін постачання 7-14 дні (днів) |
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IGW40N65F5FKSA1 | Infineon Technologies |
Description: IGBT 650V 74A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 360µJ (on), 100µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 255 W |
на замовлення 235 шт: термін постачання 21-31 дні (днів) |
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IGW40N65F5FKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 650V 74A 250000mW 3-Pin(3+Tab) TO-247 Tube |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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IGW40N65F5FKSA1 | Infineon |
IGBT 650V 74A 255W IGW40N65F5FKSA1 TIGW40n65f5 кількість в упаковці: 10 шт |
на замовлення 30 шт: термін постачання 28-31 дні (днів) |
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IGW40N65H5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Kind of package: tube Manufacturer series: H5 |
на замовлення 236 шт: термін постачання 21-30 дні (днів) |
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IGW40N65H5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Kind of package: tube Manufacturer series: H5 кількість в упаковці: 1 шт |
на замовлення 236 шт: термін постачання 7-14 дні (днів) |
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IGW40N65H5FKSA1 | Infineon Technologies |
Description: IGBT 650V 74A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 22ns/165ns Switching Energy: 390µJ (on), 120µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 255 W |
на замовлення 176 шт: термін постачання 21-31 дні (днів) |
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IHW40N65R5XKSA1 | Infineon Technologies |
Description: IGBT 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 30ns/258ns Switching Energy: 630µJ (on), 140µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 193 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 230 W |
на замовлення 101 шт: термін постачання 21-31 дні (днів) |
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IHW40N65R6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 105W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 159nC Kind of package: tube Turn-on time: 36ns Turn-off time: 256ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
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IHW40N65R6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 105W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 159nC Kind of package: tube Turn-on time: 36ns Turn-off time: 256ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) кількість в упаковці: 1 шт |
на замовлення 68 шт: термін постачання 7-14 дні (днів) |
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IHW40N65R6XKSA1 | Infineon Technologies |
Description: IGBT 650V 83A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 99 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 17ns/211ns Switching Energy: 1.1mJ (on), 420µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 159 nC Part Status: Active Current - Collector (Ic) (Max): 83 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 210 W |
на замовлення 196 шт: термін постачання 21-31 дні (днів) |
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IKB40N65EF5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 74A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 83 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/160ns Switching Energy: 420µJ (on), 100µJ (off) Test Condition: 400V, 40A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 250 W |
на замовлення 1718 шт: термін постачання 21-31 дні (днів) |
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IKB40N65EF5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 74A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 83 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/160ns Switching Energy: 420µJ (on), 100µJ (off) Test Condition: 400V, 40A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 250 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IKB40N65EH5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 74A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 78 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/157ns Switching Energy: 1.1mJ (on), 400µJ (off) Test Condition: 400V, 40A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 250 W |
на замовлення 1362 шт: термін постачання 21-31 дні (днів) |
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IKB40N65ES5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 79A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 73 ns Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/130ns Switching Energy: 860µJ (on), 400µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 79 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 230 W |
на замовлення 9192 шт: термін постачання 21-31 дні (днів) |
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IKB40N65ES5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 79A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 73 ns Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/130ns Switching Energy: 860µJ (on), 400µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 79 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 230 W |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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IKFW40N60DH3EXKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 34A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 72 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: PG-TO247-3-AI IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/144ns Switching Energy: 870µJ (on), 360µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 107 nC Part Status: Active Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 111 W |
на замовлення 220 шт: термін постачання 21-31 дні (днів) |
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IKFW40N65ES5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 60A HSIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/124ns Switching Energy: 560µJ (on), 320µJ (off) Test Condition: 400V, 30A, 13Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 106 W |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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IKP40N65F5XKSA1 | Infineon Technologies |
Description: IGBT 650V 74A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO220-3 Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 360µJ (on), 100µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 255 W |
на замовлення 610 шт: термін постачання 21-31 дні (днів) |
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IKP40N65H5XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 650V 74A 250000mW 3-Pin(3+Tab) TO-220 Tube |
на замовлення 3848 шт: термін постачання 21-31 дні (днів) |
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IKW40N60DTPXKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247 Tube |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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IKW40N60DTPXKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 67A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 87 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/222ns Switching Energy: 1.06mJ (on), 610µJ (off) Test Condition: 400V, 40A, 10.1Ohm, 15V Gate Charge: 177 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 246 W |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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IKW40N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 153W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 223nC Kind of package: tube Turn-on time: 52ns Turn-off time: 218ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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IKW40N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 153W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 223nC Kind of package: tube Turn-on time: 52ns Turn-off time: 218ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 3 шт: термін постачання 7-14 дні (днів) |
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FGH40N60SFD (FGH40N60SFDTU) Код товару: 79400 |
у наявності: 1 шт
очікується:
300 шт
Кількість | Ціна без ПДВ |
---|---|
1+ | 165 грн |
10+ | 152 грн |
100+ | 139 грн |
FGH40N60SMD Код товару: 63296 |
Виробник: FAIR/ON
Транзистори > IGBT
Корпус: TO-247
Vces: 600 V
Vce: 2,1 V
Ic 25: 80 A
Ic 100: 40 A
Pd 25: 349 W
td(on)/td(off) 100-150 град: 12/92
Транзистори > IGBT
Корпус: TO-247
Vces: 600 V
Vce: 2,1 V
Ic 25: 80 A
Ic 100: 40 A
Pd 25: 349 W
td(on)/td(off) 100-150 град: 12/92
у наявності: 138 шт
Кількість | Ціна без ПДВ |
---|---|
1+ | 205 грн |
10+ | 186 грн |
AIGW40N65H5XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 160ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 160ns
на замовлення 210 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 421.69 грн |
3+ | 314.94 грн |
8+ | 298.07 грн |
100+ | 289.63 грн |
AIGW40N65H5XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 160ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 160ns
кількість в упаковці: 1 шт
на замовлення 210 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 506.02 грн |
3+ | 392.46 грн |
8+ | 357.68 грн |
100+ | 347.56 грн |
AIKB40N65DH5ATMA1 |
Виробник: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 176.17 грн |
AIKB40N65DH5ATMA1 |
Виробник: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
на замовлення 2954 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 340.92 грн |
10+ | 275.5 грн |
100+ | 222.9 грн |
500+ | 185.94 грн |
BIDW40N65ES5 |
Виробник: Bourns Inc.
Description: IGBT TRENCH FS 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 580µJ (on), 630µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 107 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
Description: IGBT TRENCH FS 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 580µJ (on), 630µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 107 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 329.24 грн |
30+ | 251.27 грн |
120+ | 215.4 грн |
510+ | 179.68 грн |
1020+ | 153.85 грн |
2010+ | 144.87 грн |
BIDW40N65H5 |
Виробник: Bourns Inc.
Description: IGBT TRENCH FS 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 165 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/116ns
Switching Energy: 1.9mJ (on), 0.52mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 111 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
Description: IGBT TRENCH FS 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 165 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/116ns
Switching Energy: 1.9mJ (on), 0.52mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 111 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 329.24 грн |
30+ | 251.27 грн |
120+ | 215.4 грн |
510+ | 179.68 грн |
1020+ | 153.85 грн |
2010+ | 144.87 грн |
BSPQ000603040N6B00 |
Виробник: Pulse Electronics
Description: FIXED IND 0.6NH 1.1A 40MOHM SMD
Packaging: Cut Tape (CT)
Tolerance: ±0.1nH
Package / Case: 0201 (0603 Metric)
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Thick Film
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 40mOhm Max
Q @ Freq: 20 @ 500MHz
Frequency - Self Resonant: 20GHz
Material - Core: Ceramic
Inductance Frequency - Test: 500 MHz
Supplier Device Package: 0201
Height - Seated (Max): 0.017" (0.43mm)
Part Status: Active
Inductance: 0.6 nH
Current Rating (Amps): 1.1 A
Description: FIXED IND 0.6NH 1.1A 40MOHM SMD
Packaging: Cut Tape (CT)
Tolerance: ±0.1nH
Package / Case: 0201 (0603 Metric)
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Thick Film
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 40mOhm Max
Q @ Freq: 20 @ 500MHz
Frequency - Self Resonant: 20GHz
Material - Core: Ceramic
Inductance Frequency - Test: 500 MHz
Supplier Device Package: 0201
Height - Seated (Max): 0.017" (0.43mm)
Part Status: Active
Inductance: 0.6 nH
Current Rating (Amps): 1.1 A
на замовлення 14380 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
34+ | 8.76 грн |
41+ | 6.89 грн |
45+ | 6.33 грн |
51+ | 5.24 грн |
100+ | 4.59 грн |
250+ | 4.37 грн |
500+ | 4.04 грн |
1000+ | 3.09 грн |
2500+ | 2.92 грн |
FCH040N65S3-F155 |
Виробник: onsemi
Description: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 6.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V
Description: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 6.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V
на замовлення 1137 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 841.72 грн |
30+ | 655.98 грн |
120+ | 617.41 грн |
510+ | 525.09 грн |
1020+ | 481.64 грн |
FGA40N65SMD |
Виробник: onsemi
Description: IGBT FIELD STOP 650V 80A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 820µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Description: IGBT FIELD STOP 650V 80A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 820µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
на замовлення 442 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 300.77 грн |
30+ | 229.32 грн |
120+ | 196.56 грн |
FGAF40N60SMD |
на замовлення 22 шт:
термін постачання 28-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 241.57 грн |
FGH40N60SFD |
Виробник: Fairchaild
IGBT транзистор - [TO-247-3]; Uкэ.макс 600 V, 40 A Field Stop
IGBT транзистор - [TO-247-3]; Uкэ.макс 600 V, 40 A Field Stop
на замовлення 2 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 313.42 грн |
10+ | 261.94 грн |
FGH40N60SFDTU |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 187.39 грн |
FGH40N60SMD |
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 37 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 367.93 грн |
3+ | 302.29 грн |
4+ | 262.21 грн |
9+ | 247.45 грн |
FGH40N60SMD-F085 |
Виробник: onsemi
Description: IGBT 600V 80A 349W TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/110ns
Switching Energy: 920µJ (on), 300µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 600V 80A 349W TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/110ns
Switching Energy: 920µJ (on), 300µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 241 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 432.18 грн |
30+ | 332.07 грн |
120+ | 297.11 грн |
FGH40N60SMD-F085 |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 80A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube
на замовлення 300 шт:
термін постачання 21-31 дні (днів)FGH40N60UFDTU |
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 103 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 327.81 грн |
3+ | 273.46 грн |
4+ | 210.19 грн |
11+ | 198.24 грн |
FGH40N60UFDTU |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube
на замовлення 450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 161.41 грн |
FGH40N60UFDTU |
Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
на замовлення 1193 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 319.02 грн |
30+ | 243.35 грн |
120+ | 208.58 грн |
510+ | 174 грн |
1020+ | 148.99 грн |
FGH40N65UFDTU |
на замовлення 51 шт:
термін постачання 28-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 493.25 грн |
HGTG40N60A4 |
Виробник: ON-Semicoductor
Trans IGBT Chip N-CH 600V 75A 625000mW 3-Pin(3+Tab) TO-247 HGTG40N60A4 THGTG40n60a4
кількість в упаковці: 2 шт
Trans IGBT Chip N-CH 600V 75A 625000mW 3-Pin(3+Tab) TO-247 HGTG40N60A4 THGTG40n60a4
кількість в упаковці: 2 шт
на замовлення 19 шт:
термін постачання 28-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 493.08 грн |
IGP40N65F5XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 208.95 грн |
3+ | 171.53 грн |
6+ | 163.09 грн |
10+ | 153.95 грн |
50+ | 148.33 грн |
IGP40N65F5XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 250.74 грн |
3+ | 213.75 грн |
6+ | 195.71 грн |
10+ | 184.75 грн |
50+ | 178 грн |
IGP40N65F5XKSA1 |
Виробник: Infineon Technologies
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 198.57 грн |
50+ | 151.45 грн |
100+ | 129.82 грн |
500+ | 108.3 грн |
IGP40N65H5XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
на замовлення 43 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 144.82 грн |
7+ | 125.84 грн |
18+ | 119.51 грн |
IGP40N65H5XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
кількість в упаковці: 1 шт
на замовлення 43 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 212.58 грн |
3+ | 180.46 грн |
7+ | 151 грн |
18+ | 143.41 грн |
IGP40N65H5XKSA1 |
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-220 Tube
Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-220 Tube
на замовлення 52 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 97.63 грн |
IGP40N65H5XKSA1 |
Виробник: Infineon Technologies
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 991 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 198.57 грн |
50+ | 151.45 грн |
100+ | 129.82 грн |
500+ | 108.3 грн |
IGW40N60H3FKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 306W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 306W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
кількість в упаковці: 1 шт
товар відсутній
IGW40N60H3FKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
на замовлення 168 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 305.88 грн |
30+ | 233.06 грн |
120+ | 199.78 грн |
IGW40N60H3FKSA1 |
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247 Tube
на замовлення 185 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 150.38 грн |
IGW40N60H3FKSA1 |
на замовлення 5 шт:
термін постачання 28-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 187.39 грн |
IGW40N60TPXKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH/FS 600V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
Description: IGBT TRENCH/FS 600V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
на замовлення 382 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 194.92 грн |
30+ | 150.81 грн |
120+ | 124.1 грн |
IGW40N65F5FKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Manufacturer series: F5
на замовлення 15 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 227.12 грн |
3+ | 186.29 грн |
6+ | 161.69 грн |
15+ | 152.55 грн |
IGW40N65F5FKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Manufacturer series: F5
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Manufacturer series: F5
кількість в упаковці: 1 шт
на замовлення 15 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 272.54 грн |
3+ | 232.15 грн |
6+ | 194.02 грн |
15+ | 183.06 грн |
IGW40N65F5FKSA1 |
Виробник: Infineon Technologies
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 235 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 249.67 грн |
30+ | 190.6 грн |
120+ | 163.36 грн |
IGW40N65F5FKSA1 |
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 650V 74A 250000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 74A 250000mW 3-Pin(3+Tab) TO-247 Tube
на замовлення 200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 122.83 грн |
IGW40N65F5FKSA1 |
на замовлення 30 шт:
термін постачання 28-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 160.81 грн |
IGW40N65H5FKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
на замовлення 236 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 244.53 грн |
3+ | 201.05 грн |
5+ | 173.64 грн |
14+ | 164.5 грн |
IGW40N65H5FKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
кількість в упаковці: 1 шт
на замовлення 236 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 293.44 грн |
3+ | 250.55 грн |
5+ | 208.37 грн |
14+ | 197.4 грн |
IGW40N65H5FKSA1 |
Виробник: Infineon Technologies
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 176 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 249.67 грн |
30+ | 190.6 грн |
120+ | 163.36 грн |
IHW40N65R5XKSA1 |
Виробник: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 30ns/258ns
Switching Energy: 630µJ (on), 140µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 193 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230 W
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 30ns/258ns
Switching Energy: 630µJ (on), 140µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 193 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230 W
на замовлення 101 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 215.36 грн |
30+ | 164.2 грн |
IHW40N65R6XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
на замовлення 68 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 215.76 грн |
3+ | 179.97 грн |
6+ | 144.11 грн |
16+ | 136.38 грн |
IHW40N65R6XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 1 шт
на замовлення 68 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 258.92 грн |
3+ | 224.26 грн |
6+ | 172.94 грн |
16+ | 163.66 грн |
IHW40N65R6XKSA1 |
Виробник: Infineon Technologies
Description: IGBT 650V 83A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 99 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 17ns/211ns
Switching Energy: 1.1mJ (on), 420µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 159 nC
Part Status: Active
Current - Collector (Ic) (Max): 83 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 210 W
Description: IGBT 650V 83A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 99 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 17ns/211ns
Switching Energy: 1.1mJ (on), 420µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 159 nC
Part Status: Active
Current - Collector (Ic) (Max): 83 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 210 W
на замовлення 196 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 205.14 грн |
30+ | 156.3 грн |
120+ | 133.97 грн |
IKB40N65EF5ATMA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 83 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 420µJ (on), 100µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 83 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 420µJ (on), 100µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
на замовлення 1718 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 296.39 грн |
10+ | 239.65 грн |
100+ | 193.86 грн |
500+ | 161.72 грн |
IKB40N65EF5ATMA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 83 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 420µJ (on), 100µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 83 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 420µJ (on), 100µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 153.23 грн |
IKB40N65EH5ATMA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 78 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/157ns
Switching Energy: 1.1mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
Description: IGBT TRENCH FS 650V 74A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 78 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/157ns
Switching Energy: 1.1mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
на замовлення 1362 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 296.39 грн |
10+ | 239.65 грн |
100+ | 193.86 грн |
500+ | 161.72 грн |
IKB40N65ES5ATMA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 79A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 79 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
Description: IGBT TRENCH FS 650V 79A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 79 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
на замовлення 9192 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 296.39 грн |
10+ | 239.65 грн |
100+ | 193.86 грн |
500+ | 161.72 грн |
IKB40N65ES5ATMA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 79A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 79 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
Description: IGBT TRENCH FS 650V 79A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 79 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 153.23 грн |
2000+ | 138.94 грн |
IKFW40N60DH3EXKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/144ns
Switching Energy: 870µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 111 W
Description: IGBT TRENCH FS 600V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/144ns
Switching Energy: 870µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 111 W
на замовлення 220 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 385.45 грн |
30+ | 294.08 грн |
120+ | 252.07 грн |
IKFW40N65ES5XKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 60A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
Description: IGBT TRENCH FS 650V 60A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
на замовлення 49 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 551.9 грн |
30+ | 424.09 грн |
IKP40N65F5XKSA1 |
Виробник: Infineon Technologies
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 610 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 246.02 грн |
50+ | 187.97 грн |
100+ | 161.12 грн |
500+ | 134.4 грн |
IKP40N65H5XKSA1 |
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 650V 74A 250000mW 3-Pin(3+Tab) TO-220 Tube
Trans IGBT Chip N-CH 650V 74A 250000mW 3-Pin(3+Tab) TO-220 Tube
на замовлення 3848 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 119.68 грн |
IKW40N60DTPXKSA1 |
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247 Tube
на замовлення 240 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 82.67 грн |
IKW40N60DTPXKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
Description: IGBT TRENCH FS 600V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 210.25 грн |
30+ | 160.75 грн |
IKW40N60H3FKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 3 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 415.63 грн |
3+ | 347.28 грн |
IKW40N60H3FKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 498.75 грн |
3+ | 432.76 грн |
4+ | 318.88 грн |
9+ | 301.16 грн |
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