Результат пошуку "4n65" : > 180
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
BXP4N65F Код товару: 201270 |
Транзистори > Польові N-канальні |
товар відсутній
|
|||
|
IXFP34N65X2 Код товару: 180236 |
 Різні комплектуючі > Різні комплектуючі 1 |
товар відсутній
|
|||
|
IXTP4N65X2 Код товару: 154844 |
Транзистори > Польові N-канальні |
товар відсутній
|
|||
|
SVF4N65F(транзистор) Код товару: 84156 |
Різні комплектуючі > Різні комплектуючі 3 |
товар відсутній
|
|||
|
SW4N65K2 Код товару: 192806 |
Транзистори > Польові N-канальні |
товар відсутній
|
|||
| 74HCU04N652 | NEXPERIA | 74HCU04N652-NEX Gates, inverters |
товар відсутній |
||
|
|
APT94N65B2C3G | Microchip Technology |
Trans MOSFET N-CH 650V 94A 3-Pin(3+Tab) T-MAX Tube |
товар відсутній |
|
| APT94N65B2C6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 61A Pulsed drain current: 282A Power dissipation: 833W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 0.32µC Kind of channel: enhanced |
товар відсутній |
||
| APT94N65B2C6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 61A Pulsed drain current: 282A Power dissipation: 833W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 0.32µC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||
|
|
APT94N65B2C6 | Microchip Technology |
Trans MOSFET N-CH 650V 95A 3-Pin(3+Tab) T-MAX Tube |
товар відсутній |
|
|
|
BXP4N65F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 37W Case: TO220F Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|
|
|
BXP4N65F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 37W Case: TO220F Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
BXP4N65U | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|
|
|
BXP4N65U | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 5 шт |
товар відсутній |
|
|
|
IXFA34N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 0.1Ω Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 164ns |
товар відсутній |
|
|
|
IXFA34N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 0.1Ω Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 164ns кількість в упаковці: 1 шт |
товар відсутній |
|
 |
IXFA34N65X2 | Littelfuse |
Trans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D2PAK |
товар відсутній |
|
| IXFA34N65X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
товар відсутній |
||
| IXFA34N65X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns кількість в упаковці: 1 шт |
товар відсутній |
||
|
|
IXFA34N65X3 | Littelfuse Inc. |
Description: MOSFET 34A 650V X3 TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 2.5mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V |
товар відсутній |
|
| IXFA34N65X3 | Littelfuse |
Discrete MOSFET 34A 650V X3 TO263 |
товар відсутній |
||
| IXFH34N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
товар відсутній |
||
| IXFH34N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns кількість в упаковці: 1 шт |
товар відсутній |
||
| IXFH54N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 70A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 59mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 140ns |
товар відсутній |
||
| IXFH54N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 70A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 59mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 140ns кількість в упаковці: 1 шт |
товар відсутній |
||
|
|
IXFP34N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO220AB On-state resistance: 0.1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 164ns |
товар відсутній |
|
|
|
IXFP34N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO220AB On-state resistance: 0.1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 164ns кількість в упаковці: 1 шт |
товар відсутній |
|
 |
IXFP34N65X2 | Littelfuse |
Trans MOSFET N-CH 650V 34A 3-Pin(3+Tab) TO-220AB |
товар відсутній |
|
|
|
IXFP34N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 164ns |
товар відсутній |
|
|
|
IXFP34N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 164ns кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
IXFP34N65X2M | IXYS |
Description: MOSFET N-CH 650V 34A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-220 Isolated Tab Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V |
товар відсутній |
|
|
|
IXFP34N65X2M | Littelfuse |
X2-Class HiperFETTM Power MOSFET |
товар відсутній |
|
|
|
IXFP34N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
товар відсутній |
|
|
|
IXFP34N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns кількість в упаковці: 1 шт |
товар відсутній |
|
| IXFP34N65X3 | Littelfuse |
Discrete MOSFET 34A 650V X3 TO220 |
товар відсутній |
||
|
|
IXFP34N65X3 | Littelfuse Inc. |
Description: MOSFET 34A 650V X3 TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 2.5mA Supplier Device Package: TO-220-3 (IXFP) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V |
товар відсутній |
|
|
|
IXTA24N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO263 On-state resistance: 0.145Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 390ns |
товар відсутній |
|
|
|
IXTA24N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO263 On-state resistance: 0.145Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 390ns кількість в упаковці: 1 шт |
товар відсутній |
|
 |
IXTA24N65X2 | Littelfuse |
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) TO-263AA |
товар відсутній |
|
|
|
IXTA24N65X2 | IXYS |
Description: MOSFET N-CH 650V 24A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V |
товар відсутній |
|
| IXTA24N65X2TRL | Littelfuse | IXTA24N65X2TRL |
товар відсутній |
||
|
|
IXTA34N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 96mΩ Mounting: SMD Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 390ns |
товар відсутній |
|
|
|
IXTA34N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 96mΩ Mounting: SMD Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 390ns кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
IXTA34N65X2 | Littelfuse |
Trans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D2PAK |
товар відсутній |
|
 |
IXTA34N65X2 | IXYS |
MOSFET MSFT N-CH ULTRA JNCT X2 3&44 |
товар відсутній |
|
|
|
IXTA34N65X2-TRL | IXYS |
MOSFET IXTA34N65X2 TRL |
товар відсутній |
|
|
|
IXTA4N65X2 | Littelfuse |
Trans MOSFET N-CH 650V 4A 3-Pin(2+Tab) D2PAK |
товар відсутній |
|
|
|
IXTA4N65X2 | Littelfuse Inc. |
Description: MOSFET N-CH 650V 4A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V |
товар відсутній |
|
 |
IXTA4N65X2 | IXYS |
MOSFET MSFT N-CH ULTRA JNCT X2 3&44 |
товар відсутній |
|
|
|
IXTH24N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 390ns |
товар відсутній |
|
 |
IXTH24N65X2 | Littelfuse |
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 |
товар відсутній |
|
|
|
IXTH34N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO247-3 On-state resistance: 96mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 390ns |
товар відсутній |
|
|
|
IXTH34N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO247-3 On-state resistance: 96mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 390ns кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
IXTH34N65X2 | Littelfuse |
Trans MOSFET N-CH 650V 34A 3-Pin(3+Tab) TO-247 |
товар відсутній |
|
|
|
IXTH64N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 64A Power dissipation: 890W Case: TO247-3 On-state resistance: 51mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 450ns |
товар відсутній |
|
|
|
IXTH64N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 64A Power dissipation: 890W Case: TO247-3 On-state resistance: 51mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 450ns кількість в упаковці: 1 шт |
товар відсутній |
|
 |
IXTP24N65X2 | Littelfuse |
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB |
товар відсутній |
|
 |
IXTP24N65X2 | IXYS |
MOSFET MSFT N-CH ULTRA JNCT X2 3&44 |
товар відсутній |
|
|
|
IXTP24N65X2M | Littelfuse |
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) OVERMOLDED TO-220 |
товар відсутній |
|
|
|
IXTP24N65X2M | IXYS |
Description: MOSFET N-CH 650V 24A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Isolated Tab Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V |
товар відсутній |
| APT94N65B2C3G |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 650V 94A 3-Pin(3+Tab) T-MAX Tube
Trans MOSFET N-CH 650V 94A 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| APT94N65B2C6 |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 61A
Pulsed drain current: 282A
Power dissipation: 833W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 0.32µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 61A
Pulsed drain current: 282A
Power dissipation: 833W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 0.32µC
Kind of channel: enhanced
товар відсутній
| APT94N65B2C6 |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 61A
Pulsed drain current: 282A
Power dissipation: 833W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 0.32µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 61A
Pulsed drain current: 282A
Power dissipation: 833W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 0.32µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT94N65B2C6 |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 650V 95A 3-Pin(3+Tab) T-MAX Tube
Trans MOSFET N-CH 650V 95A 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| BXP4N65F |
|
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BXP4N65F |
|
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BXP4N65U |
|
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BXP4N65U |
|
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| IXFA34N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
товар відсутній
| IXFA34N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
кількість в упаковці: 1 шт
товар відсутній
| IXFA34N65X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
товар відсутній
| IXFA34N65X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
| IXFA34N65X3 |
|
Виробник: Littelfuse Inc.
Description: MOSFET 34A 650V X3 TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V
Description: MOSFET 34A 650V X3 TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V
товар відсутній
| IXFH34N65X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
товар відсутній
| IXFH34N65X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
| IXFH54N65X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
товар відсутній
| IXFH54N65X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
товар відсутній
| IXFP34N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
товар відсутній
| IXFP34N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
кількість в упаковці: 1 шт
товар відсутній
| IXFP34N65X2M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 164ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 164ns
товар відсутній
| IXFP34N65X2M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 164ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 164ns
кількість в упаковці: 1 шт
товар відсутній
| IXFP34N65X2M |
|
Виробник: IXYS
Description: MOSFET N-CH 650V 34A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
Description: MOSFET N-CH 650V 34A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
товар відсутній
| IXFP34N65X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
товар відсутній
| IXFP34N65X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
| IXFP34N65X3 |
|
Виробник: Littelfuse Inc.
Description: MOSFET 34A 650V X3 TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-220-3 (IXFP)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V
Description: MOSFET 34A 650V X3 TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-220-3 (IXFP)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V
товар відсутній
| IXTA24N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
товар відсутній
| IXTA24N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
товар відсутній
| IXTA24N65X2 |
|
Виробник: IXYS
Description: MOSFET N-CH 650V 24A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Description: MOSFET N-CH 650V 24A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
товар відсутній
| IXTA34N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
товар відсутній
| IXTA34N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
товар відсутній
| IXTA4N65X2 |
|
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 650V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
Description: MOSFET N-CH 650V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
товар відсутній
| IXTH24N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
товар відсутній
| IXTH34N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
товар відсутній
| IXTH34N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
товар відсутній
| IXTH64N65X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
товар відсутній
| IXTH64N65X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
кількість в упаковці: 1 шт
товар відсутній
| IXTP24N65X2M |
|
Виробник: Littelfuse
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) OVERMOLDED TO-220
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) OVERMOLDED TO-220
товар відсутній
| IXTP24N65X2M |
|
Виробник: IXYS
Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
товар відсутній