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STEVAL-IFP017V3 STEVAL-IFP017V3 STMicroelectronics en.DM00270603.pdf Description: EVAL BOARD FOR L6362A
Packaging: Bulk
Function: Transceiver, IO-Link®
Type: Interface
Contents: Board(s)
Utilized IC / Part: L6362A
Supplied Contents: Board(s)
Secondary Attributes: On-Board LEDs
Embedded: No
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STEVAL-MKI168V1 STEVAL-MKI168V1 STMicroelectronics en.DM00270536.pdf Description: DIL24 ADAPTER BOARD IIS2DH
Packaging: Bulk
Sensitivity: 0.98 mg/digit, 1.95 mg/digit, 3.91 mg/digit, 11.72 mg/digit
Function: Accelerometer
Interface: I2C, Serial, SPI
Type: Sensor
Contents: Board(s)
Voltage - Supply: 1.71V ~ 3.6V
Sensor Type: Accelerometer, 3 Axis
Utilized IC / Part: IIS2DH
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±2g, 4g, 8g, 16g
Platform: Professional MEMS Tool
Part Status: Active
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+1424.94 грн
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STEVAL-MKI169V1 STEVAL-MKI169V1 STMicroelectronics en.DM00270827.pdf Description: DIL24 ADAPTER BOARD I3G4250D
Packaging: Bulk
Sensitivity: 8.75mdps/digit, 17.5mdps/digit, 70mdps/digit
Function: Gyroscope
Interface: I2C, Serial, SPI
Type: Sensor
Contents: Board(s)
Voltage - Supply: 2.4V ~ 3.6V
Sensor Type: Gyroscope, 3 Axis
Utilized IC / Part: I3G4250D
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec
Platform: Professional MEMS Tool
Part Status: Active
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+1424.94 грн
В кошику  од. на суму  грн.
ST2100 ST2100 STMicroelectronics en.DM00104730.pdf Description: IC BROADBAND FRONT-END 373TFBGA
Packaging: Tray
Package / Case: 373-TFBGA
Mounting Type: Surface Mount
Type: Broadband Front-End
Applications: Power Line Communications
Supplier Device Package: 373-TFBGA (12x12)
Part Status: Active
DigiKey Programmable: Not Verified
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STEVAL-MKI172V1 STEVAL-MKI172V1 STMicroelectronics en.DM00177685.pdf Description: DIL24 ADAPTER BOARD LSM303AGR
Packaging: Bulk
Interface: I2C, Serial, SPI
Voltage - Supply: 1.71V ~ 3.6V
Sensor Type: Accelerometer, Magnetometer
Utilized IC / Part: LSM303AGR
Supplied Contents: Board(s)
Sensing Range: ±2g, 4g, 8g, 16g, ±50gauss
Part Status: Active
Function: Accelerometer, Magnetometer
Type: Sensor
Contents: Board(s)
Platform: Professional MEMS Tool
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
1+1285.04 грн
В кошику  од. на суму  грн.
STEVAL-FET001V1 STEVAL-FET001V1 STMicroelectronics en.DM00275996.pdf Description: EVAL BOARD FOR M41T62
Packaging: Bulk
Function: Real Time Clock (RTC)
Type: Timing
Utilized IC / Part: M41T62
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
товару немає в наявності
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L6703 STMicroelectronics Description: IC CONTROLLER SGL PHASE
товару немає в наявності
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L6703TR STMicroelectronics Description: IC CONTROLLER SGL PHASE
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STIEC45-24ACS STIEC45-24ACS STMicroelectronics en.CD00258714.pdf Description: TVS DIODE 24VWM 42VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 42V
Power Line Protection: No
Part Status: Obsolete
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STIEC45-26ACS STIEC45-26ACS STMicroelectronics en.CD00258714.pdf Description: TVS DIODE 26VWM 45VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 45V
Power Line Protection: No
Part Status: Obsolete
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STIEC45-28ACS STIEC45-28ACS STMicroelectronics en.CD00258714.pdf Description: TVS DIODE 28VWM 49VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 49V
Power Line Protection: No
Part Status: Obsolete
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STD46N6F7 STD46N6F7 STMicroelectronics en.DM00227324.pdf Description: MOSFET N-CH 60V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 30 V
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STGB30V60F STGB30V60F STMicroelectronics Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
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STGB5H60DF STGB5H60DF STMicroelectronics en.DM00149621.pdf Description: IGBT TRENCH FS 600V 10A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
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STGD5H60DF STGD5H60DF STMicroelectronics en.DM00149621.pdf Description: IGBT TRENCH FS 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 83 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+28.00 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STL50DN6F7 STL50DN6F7 STMicroelectronics en.DM00216100.pdf Description: MOSFET 2N-CH 60V 57A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+45.15 грн
6000+41.59 грн
Мінімальне замовлення: 3000
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STD7LN80K5 STD7LN80K5 STMicroelectronics en.DM00256349.pdf Description: MOSFET N-CH 800V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
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STL7LN80K5 STL7LN80K5 STMicroelectronics en.DM00261218.pdf Description: MOSFET N-CH 800V 5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
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STL11N6F7 STL11N6F7 STMicroelectronics en.DM00216237.pdf Description: MOSFET N-CH 60V 11A POWERFLAT
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STL100N8F7 STL100N8F7 STMicroelectronics en.DM00140134.pdf Description: MOSFET N-CH 80V 100A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
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STL8DN6LF6AG STL8DN6LF6AG STMicroelectronics en.DM00208902.pdf Description: MOSFET 2N-CH 32A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+37.80 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STL8N6LF6AG STL8N6LF6AG STMicroelectronics en.DM00213144.pdf Description: MOSFET N-CH 60V 32A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Power Dissipation (Max): 4.8W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+42.17 грн
Мінімальне замовлення: 3000
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STB80N4F6AG STB80N4F6AG STMicroelectronics en.DM00206725.pdf Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
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STGB15M65DF2 STGB15M65DF2 STMicroelectronics en.DM00096991.pdf Description: IGBT TRENCH FS 650V 30A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+59.60 грн
2000+53.22 грн
Мінімальне замовлення: 1000
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STGB30H60DLFB STGB30H60DLFB STMicroelectronics Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 393µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
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STH290N4F6-2AG STH290N4F6-2AG STMicroelectronics en.DM00206158.pdf Description: MOSFET N-CH 40V 180A H2PAK-2
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STH290N4F6-6AG STH290N4F6-6AG STMicroelectronics en.DM00206158.pdf Description: MOSFET N-CH 40V 180A H2PAK-6
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STL120N4LF6AG STL120N4LF6AG STMicroelectronics en.DM00064632.pdf Description: MOSFET N-CH 40V 120A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Qualification: AEC-Q101
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STD19N3LLH6AG STD19N3LLH6AG STMicroelectronics en.DM00064632.pdf Description: MOSFET N-CH 30V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 25 V
Qualification: AEC-Q101
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STD85N10F7AG STD85N10F7AG STMicroelectronics en.DM00136911.pdf Description: MOSFET N-CH 100V 70A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Qualification: AEC-Q101
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+52.78 грн
Мінімальне замовлення: 2500
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STGB30H60DFB STGB30H60DFB STMicroelectronics en.DM00125119.pdf Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
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STHVDAC-256MTGF3 STHVDAC-256MTGF3 STMicroelectronics en.DM00229754.pdf Description: IC DAC 7BIT 20FLIPCHIP
товару немає в наявності
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STPTIC-27L2C5 STPTIC-27L2C5 STMicroelectronics Description: IC TUNABLE CAP RF 700-2700MHZ
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-FlipChip
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Z0402MF0AA2 Z0402MF0AA2 STMicroelectronics z04.pdf Description: TRIAC SENS GATE 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
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Z0405NF0AA2 Z0405NF0AA2 STMicroelectronics z04.pdf Description: TRIAC SENS GATE 800V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
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Z0409NF0AA2 Z0409NF0AA2 STMicroelectronics z04.pdf Description: TRIAC SENS GATE 800V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
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Z0410MF0AA2 Z0410MF0AA2 STMicroelectronics z04.pdf Description: TRIAC 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
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Z0405MF0AA2 Z0405MF0AA2 STMicroelectronics z04.pdf Description: TRIAC SENS GATE 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
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STGF15M65DF2 STGF15M65DF2 STMicroelectronics en.DM00237960.pdf Description: IGBT TRENCH FS 650V 30A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 31 W
на замовлення 1926 шт:
термін постачання 21-31 дні (днів)
3+149.40 грн
50+69.52 грн
100+62.25 грн
500+46.44 грн
1000+42.59 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGF5H60DF STGF5H60DF STMicroelectronics en.DM00149621.pdf Description: IGBT TRENCH FS 600V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 24 W
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STGP15M65DF2 STGP15M65DF2 STMicroelectronics en.DM00237971.pdf Description: IGBT TRENCH FS 650V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
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STGP30H60DFB STGP30H60DFB STMicroelectronics en.DM00125119.pdf Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
на замовлення 1862 шт:
термін постачання 21-31 дні (днів)
2+214.17 грн
50+101.94 грн
100+91.84 грн
500+69.57 грн
1000+64.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STGP5H60DF STGP5H60DF STMicroelectronics en.DM00149621.pdf Description: IGBT TRENCH FS 600V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
на замовлення 1944 шт:
термін постачання 21-31 дні (днів)
3+145.95 грн
50+67.53 грн
100+60.42 грн
500+44.99 грн
1000+41.22 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGW30M65DF2 STGW30M65DF2 STMicroelectronics en.DM00177695.pdf Description: IGBT TRENCH FS 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
2+336.81 грн
30+178.66 грн
120+146.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP110N8F7 STP110N8F7 STMicroelectronics en.DM00064632.pdf Description: MOSFET N-CH 80V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
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STP27N60M2-EP STP27N60M2-EP STMicroelectronics en.DM00251846.pdf Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
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STW27N60M2-EP STW27N60M2-EP STMicroelectronics en.DM00251846.pdf Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
на замовлення 598 шт:
термін постачання 21-31 дні (днів)
2+311.76 грн
30+165.63 грн
120+135.93 грн
510+107.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF7LN80K5 STF7LN80K5 STMicroelectronics en.DM00256224.pdf Description: MOSFET N-CH 800V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+204.67 грн
50+97.02 грн
100+87.34 грн
500+66.02 грн
1000+60.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF9N80K5 STF9N80K5 STMicroelectronics en.DM00064632.pdf Description: MOSFET N-CH 800V 7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
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STFI7LN80K5 STFI7LN80K5 STMicroelectronics en.DM00256619.pdf Description: MOSFET N-CH 800V 5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
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STFI9N80K5 STFI9N80K5 STMicroelectronics STF%28I%299N80K5.pdf Description: MOSFET N-CH 800V 7A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
товару немає в наявності
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STP7LN80K5 STP7LN80K5 STMicroelectronics en.DM00260911.pdf Description: MOSFET N-CH 800V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 452 шт:
термін постачання 21-31 дні (днів)
2+209.86 грн
50+104.07 грн
100+98.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STU7LN80K5 STU7LN80K5 STMicroelectronics en.DM00261198.pdf Description: MOSFET N-CH 800V 5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+225.40 грн
75+101.00 грн
150+91.35 грн
525+72.85 грн
1050+67.28 грн
2025+62.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF10LN80K5 STF10LN80K5 STMicroelectronics en.DM00176897.pdf Description: MOSFET N-CH 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
2+278.08 грн
50+135.39 грн
100+122.59 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP10LN80K5 STP10LN80K5 STMicroelectronics en.DM00176858.pdf Description: MOSFET N-CH 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
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STGIF7CH60TS-L STGIF7CH60TS-L STMicroelectronics en.DM00122690.pdf Description: IGBT IPM 600V 10A 26-PWRDIP MOD
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
1+824.74 грн
13+529.68 грн
104+409.84 грн
В кошику  од. на суму  грн.
STWA48N60M2 STWA48N60M2 STMicroelectronics en.DM00250450.pdf Description: MOSFET N-CH 600V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V
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STF26N60M2 STF26N60M2 STMicroelectronics en.DM00166992.pdf Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
на замовлення 843 шт:
термін постачання 21-31 дні (днів)
2+249.58 грн
50+120.77 грн
100+109.15 грн
500+83.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STFI26N60M2 STFI26N60M2 STMicroelectronics en.DM00166992.pdf Description: MOSFET N-CH 600V 20A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
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STIEC45-24ACS STIEC45-24ACS STMicroelectronics en.CD00258714.pdf Description: TVS DIODE 24VWM 42VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 42V
Power Line Protection: No
Part Status: Obsolete
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
4+86.36 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STEVAL-IFP017V3 en.DM00270603.pdf
STEVAL-IFP017V3
Виробник: STMicroelectronics
Description: EVAL BOARD FOR L6362A
Packaging: Bulk
Function: Transceiver, IO-Link®
Type: Interface
Contents: Board(s)
Utilized IC / Part: L6362A
Supplied Contents: Board(s)
Secondary Attributes: On-Board LEDs
Embedded: No
товару немає в наявності
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STEVAL-MKI168V1 en.DM00270536.pdf
STEVAL-MKI168V1
Виробник: STMicroelectronics
Description: DIL24 ADAPTER BOARD IIS2DH
Packaging: Bulk
Sensitivity: 0.98 mg/digit, 1.95 mg/digit, 3.91 mg/digit, 11.72 mg/digit
Function: Accelerometer
Interface: I2C, Serial, SPI
Type: Sensor
Contents: Board(s)
Voltage - Supply: 1.71V ~ 3.6V
Sensor Type: Accelerometer, 3 Axis
Utilized IC / Part: IIS2DH
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±2g, 4g, 8g, 16g
Platform: Professional MEMS Tool
Part Status: Active
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1424.94 грн
В кошику  од. на суму  грн.
STEVAL-MKI169V1 en.DM00270827.pdf
STEVAL-MKI169V1
Виробник: STMicroelectronics
Description: DIL24 ADAPTER BOARD I3G4250D
Packaging: Bulk
Sensitivity: 8.75mdps/digit, 17.5mdps/digit, 70mdps/digit
Function: Gyroscope
Interface: I2C, Serial, SPI
Type: Sensor
Contents: Board(s)
Voltage - Supply: 2.4V ~ 3.6V
Sensor Type: Gyroscope, 3 Axis
Utilized IC / Part: I3G4250D
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec
Platform: Professional MEMS Tool
Part Status: Active
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1424.94 грн
В кошику  од. на суму  грн.
ST2100 en.DM00104730.pdf
ST2100
Виробник: STMicroelectronics
Description: IC BROADBAND FRONT-END 373TFBGA
Packaging: Tray
Package / Case: 373-TFBGA
Mounting Type: Surface Mount
Type: Broadband Front-End
Applications: Power Line Communications
Supplier Device Package: 373-TFBGA (12x12)
Part Status: Active
DigiKey Programmable: Not Verified
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STEVAL-MKI172V1 en.DM00177685.pdf
STEVAL-MKI172V1
Виробник: STMicroelectronics
Description: DIL24 ADAPTER BOARD LSM303AGR
Packaging: Bulk
Interface: I2C, Serial, SPI
Voltage - Supply: 1.71V ~ 3.6V
Sensor Type: Accelerometer, Magnetometer
Utilized IC / Part: LSM303AGR
Supplied Contents: Board(s)
Sensing Range: ±2g, 4g, 8g, 16g, ±50gauss
Part Status: Active
Function: Accelerometer, Magnetometer
Type: Sensor
Contents: Board(s)
Platform: Professional MEMS Tool
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1285.04 грн
В кошику  од. на суму  грн.
STEVAL-FET001V1 en.DM00275996.pdf
STEVAL-FET001V1
Виробник: STMicroelectronics
Description: EVAL BOARD FOR M41T62
Packaging: Bulk
Function: Real Time Clock (RTC)
Type: Timing
Utilized IC / Part: M41T62
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
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В кошику  од. на суму  грн.
L6703
Виробник: STMicroelectronics
Description: IC CONTROLLER SGL PHASE
товару немає в наявності
В кошику  од. на суму  грн.
L6703TR
Виробник: STMicroelectronics
Description: IC CONTROLLER SGL PHASE
товару немає в наявності
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STIEC45-24ACS en.CD00258714.pdf
STIEC45-24ACS
Виробник: STMicroelectronics
Description: TVS DIODE 24VWM 42VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 42V
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
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STIEC45-26ACS en.CD00258714.pdf
STIEC45-26ACS
Виробник: STMicroelectronics
Description: TVS DIODE 26VWM 45VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 45V
Power Line Protection: No
Part Status: Obsolete
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STIEC45-28ACS en.CD00258714.pdf
STIEC45-28ACS
Виробник: STMicroelectronics
Description: TVS DIODE 28VWM 49VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 49V
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
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STD46N6F7 en.DM00227324.pdf
STD46N6F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 30 V
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STGB30V60F
STGB30V60F
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товару немає в наявності
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STGB5H60DF en.DM00149621.pdf
STGB5H60DF
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
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STGD5H60DF en.DM00149621.pdf
STGD5H60DF
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 83 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+28.00 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STL50DN6F7 en.DM00216100.pdf
STL50DN6F7
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 60V 57A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+45.15 грн
6000+41.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STD7LN80K5 en.DM00256349.pdf
STD7LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
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STL7LN80K5 en.DM00261218.pdf
STL7LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
товару немає в наявності
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STL11N6F7 en.DM00216237.pdf
STL11N6F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 11A POWERFLAT
товару немає в наявності
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STL100N8F7 en.DM00140134.pdf
STL100N8F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 100A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
товару немає в наявності
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STL8DN6LF6AG en.DM00208902.pdf
STL8DN6LF6AG
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 32A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+37.80 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STL8N6LF6AG en.DM00213144.pdf
STL8N6LF6AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 32A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Power Dissipation (Max): 4.8W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+42.17 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STB80N4F6AG en.DM00206725.pdf
STB80N4F6AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
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STGB15M65DF2 en.DM00096991.pdf
STGB15M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+59.60 грн
2000+53.22 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STGB30H60DLFB
STGB30H60DLFB
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 393µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товару немає в наявності
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STH290N4F6-2AG en.DM00206158.pdf
STH290N4F6-2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-2
товару немає в наявності
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STH290N4F6-6AG en.DM00206158.pdf
STH290N4F6-6AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-6
товару немає в наявності
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STL120N4LF6AG en.DM00064632.pdf
STL120N4LF6AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 120A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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STD19N3LLH6AG en.DM00064632.pdf
STD19N3LLH6AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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STD85N10F7AG en.DM00136911.pdf
STD85N10F7AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 70A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Qualification: AEC-Q101
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+52.78 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STGB30H60DFB en.DM00125119.pdf
STGB30H60DFB
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товару немає в наявності
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STHVDAC-256MTGF3 en.DM00229754.pdf
STHVDAC-256MTGF3
Виробник: STMicroelectronics
Description: IC DAC 7BIT 20FLIPCHIP
товару немає в наявності
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STPTIC-27L2C5
STPTIC-27L2C5
Виробник: STMicroelectronics
Description: IC TUNABLE CAP RF 700-2700MHZ
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-FlipChip
товару немає в наявності
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Z0402MF0AA2 z04.pdf
Z0402MF0AA2
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
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Z0405NF0AA2 z04.pdf
Z0405NF0AA2
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
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Z0409NF0AA2 z04.pdf
Z0409NF0AA2
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
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Z0410MF0AA2 z04.pdf
Z0410MF0AA2
Виробник: STMicroelectronics
Description: TRIAC 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
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Z0405MF0AA2 z04.pdf
Z0405MF0AA2
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
товару немає в наявності
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STGF15M65DF2 en.DM00237960.pdf
STGF15M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 31 W
на замовлення 1926 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.40 грн
50+69.52 грн
100+62.25 грн
500+46.44 грн
1000+42.59 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGF5H60DF en.DM00149621.pdf
STGF5H60DF
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 24 W
товару немає в наявності
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STGP15M65DF2 en.DM00237971.pdf
STGP15M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
товару немає в наявності
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STGP30H60DFB en.DM00125119.pdf
STGP30H60DFB
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
на замовлення 1862 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+214.17 грн
50+101.94 грн
100+91.84 грн
500+69.57 грн
1000+64.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STGP5H60DF en.DM00149621.pdf
STGP5H60DF
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
на замовлення 1944 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+145.95 грн
50+67.53 грн
100+60.42 грн
500+44.99 грн
1000+41.22 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGW30M65DF2 en.DM00177695.pdf
STGW30M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+336.81 грн
30+178.66 грн
120+146.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP110N8F7 en.DM00064632.pdf
STP110N8F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
товару немає в наявності
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STP27N60M2-EP en.DM00251846.pdf
STP27N60M2-EP
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
товару немає в наявності
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STW27N60M2-EP en.DM00251846.pdf
STW27N60M2-EP
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
на замовлення 598 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+311.76 грн
30+165.63 грн
120+135.93 грн
510+107.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF7LN80K5 en.DM00256224.pdf
STF7LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+204.67 грн
50+97.02 грн
100+87.34 грн
500+66.02 грн
1000+60.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF9N80K5 en.DM00064632.pdf
STF9N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
товару немає в наявності
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STFI7LN80K5 en.DM00256619.pdf
STFI7LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
товару немає в наявності
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STFI9N80K5 STF%28I%299N80K5.pdf
STFI9N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 7A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
товару немає в наявності
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STP7LN80K5 en.DM00260911.pdf
STP7LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 452 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+209.86 грн
50+104.07 грн
100+98.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STU7LN80K5 en.DM00261198.pdf
STU7LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+225.40 грн
75+101.00 грн
150+91.35 грн
525+72.85 грн
1050+67.28 грн
2025+62.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF10LN80K5 en.DM00176897.pdf
STF10LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+278.08 грн
50+135.39 грн
100+122.59 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP10LN80K5 en.DM00176858.pdf
STP10LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
товару немає в наявності
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STGIF7CH60TS-L en.DM00122690.pdf
STGIF7CH60TS-L
Виробник: STMicroelectronics
Description: IGBT IPM 600V 10A 26-PWRDIP MOD
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+824.74 грн
13+529.68 грн
104+409.84 грн
В кошику  од. на суму  грн.
STWA48N60M2 en.DM00250450.pdf
STWA48N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V
товару немає в наявності
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STF26N60M2 en.DM00166992.pdf
STF26N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
на замовлення 843 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+249.58 грн
50+120.77 грн
100+109.15 грн
500+83.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STFI26N60M2 en.DM00166992.pdf
STFI26N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
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STIEC45-24ACS en.CD00258714.pdf
STIEC45-24ACS
Виробник: STMicroelectronics
Description: TVS DIODE 24VWM 42VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 42V
Power Line Protection: No
Part Status: Obsolete
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+86.36 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
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