Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (124369) > Сторінка 2021 з 2073
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| SCTW60N120G2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 389W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -10...22V Gate charge: 94nC On-state resistance: 52mΩ Drain current: 60A Power dissipation: 389W Pulsed drain current: 177A Drain-source voltage: 1.2kV Case: HIP247™ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SCTWA60N120G2-4 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 389W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -10...22V Gate charge: 94nC On-state resistance: 52mΩ Drain current: 60A Power dissipation: 389W Pulsed drain current: 177A Drain-source voltage: 1.2kV Case: HIP247-4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| LD39100PU12RY | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DFN6; SMD; 2÷3% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.4V Output voltage: 1.2V Output current: 1A Case: DFN6 Mounting: SMD Manufacturer series: LD39100 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 1.5...5.5V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| LD39100PURY | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 0.8÷4.5V; 1A; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.4V Output voltage: 0.8...4.5V Output current: 1A Case: DFN6 Mounting: SMD Manufacturer series: LD39100 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 1.5...5.5V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| LD39130SJ30R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; flip chip4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3V Output current: 0.3A Case: flip chip4 Mounting: SMD Manufacturer series: LD39130S Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 1...2% Number of channels: 1 Input voltage: 1.4...5.5V Integrated circuit features: GREEN MODE pin; shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STGW30NC60WD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 30A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.14µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 76 шт: термін постачання 14-30 дні (днів) |
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M74HC08YTTR | STMicroelectronics |
Category: Gates, inverters Description: IC: digital; logic gate; AND; Ch: 4; IN: 2; SMD; TSSOP14; HC; 2÷6VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Kind of integrated circuit: logic gate Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Quiescent current: 1µA Supply voltage: 2...6V DC Manufacturer series: HC Family: HC Case: TSSOP14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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P6KE33CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 33V; 13.1A; bidirectional; ±5%; DO15; Ammo Pack; 600W Type of diode: TVS Max. off-state voltage: 28V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Tolerance: ±5% |
на замовлення 7368 шт: термін постачання 14-30 дні (днів) |
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STM32F746BGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 168 Case: LQFP208 Supply voltage: 1.7...3.6V DC Interface: CAN x2; DCMI; FMC; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: TRNG Memory: 320kB SRAM; 1MB FLASH Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Family: STM32F7 Kind of core: 32-bit Number of 32bit timers: 2 Number of 16bit timers: 12 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBJ12CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 13.3÷14V; 157A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14V Max. forward impulse current: 157A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 2570 шт: термін постачання 14-30 дні (днів) |
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SCTW35N65G2V | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 90A Power dissipation: 240W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 68mΩ Mounting: THT Gate charge: 73nC Kind of package: tube Kind of channel: enhancement |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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STPS3045CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.57V Max. load current: 30A Max. forward impulse current: 220A Kind of package: tube Heatsink thickness: 1.23...1.32mm |
на замовлення 235 шт: термін постачання 14-30 дні (днів) |
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| STM32F103T4U6A | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Family: STM32F1 Supply voltage: 2...3.6V DC Number of 16bit timers: 3 Number of inputs/outputs: 26 Memory: 6kB SRAM; 16kB FLASH Kind of core: 32-bit Clock frequency: 72MHz Interface: CAN; I2C; SPI; USB Kind of architecture: Cortex M3 Case: VFQFPN36 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STM32F103T6U6A | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Family: STM32F1 Supply voltage: 2...3.6V DC Number of 16bit timers: 3 Number of inputs/outputs: 26 Memory: 10kB SRAM; 32kB FLASH Kind of core: 32-bit Clock frequency: 72MHz Interface: CAN; I2C; SPI; USB Kind of architecture: Cortex M3 Case: VFQFPN36 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM2904WHDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...30V DC Case: SO8 Operating temperature: -40...150°C Slew rate: 0.6V/μs Integrated circuit features: low power Input offset voltage: 9mV Kind of package: reel; tape Application: automotive industry Input bias current: 0.2µA Input offset current: 40nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM2904WYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...30V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.6V/μs Integrated circuit features: low power Input offset voltage: 9mV Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBJ16A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 17.8÷18.7V; 116A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 17.8...18.7V Max. forward impulse current: 116A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
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STPST5H100UF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB flat; SMD; 100V; 5A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SMB flat Leakage current: 11.5µA Max. forward impulse current: 130A Max. forward voltage: 0.68V Load current: 5A Max. off-state voltage: 100V Kind of package: reel; tape |
на замовлення 4790 шт: термін постачання 14-30 дні (днів) |
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TL432IL3T | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2%; SOT23-3; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2% Mounting: SMD Case: SOT23-3 Operating temperature: -40...105°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP28N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 14A; Idm: 84A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 84A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.16Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
на замовлення 39 шт: термін постачання 14-30 дні (днів) |
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| LF90CPT-TR | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 9V; 0.5A; PPAK; SMD; LFXX Type of integrated circuit: voltage regulator Output current: 0.5A Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Case: PPAK Kind of package: reel; tape Manufacturer series: LFXX Output voltage: 9V Tolerance: ±2% Input voltage: 2.5...16V Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.45V |
на замовлення 2497 шт: термін постачання 14-30 дні (днів) |
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STM32F051R6T6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; STM32F0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 48MHz Mounting: SMD Number of inputs/outputs: 55 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: I2C; SPI; UART x2 Kind of architecture: Cortex M0 Memory: 8kB SRAM; 32kB FLASH Number of 16bit timers: 7 Number of 32bit timers: 1 Family: STM32F0 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SG3525 | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver; PWM controller; SO16; 100mA; 5V; Ch: 2; 8÷35VDC Type of integrated circuit: driver Kind of integrated circuit: PWM controller Case: SO16 Output current: 0.1A Output voltage: 5V Number of channels: 2 Supply voltage: 8...35V DC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N3055 | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 15A; 115W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 15A Case: TO3 Mounting: THT Power: 115W Frequency: 1MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STW12NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 19 шт: термін постачання 14-30 дні (днів) |
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STM32L073VZT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 32MHz; LQFP100; 1.65÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 32MHz Mounting: SMD Number of inputs/outputs: 84 Case: LQFP100 Supply voltage: 1.65...3.6V DC Interface: I2C x3; I2S; SPI x6; USART x4; USB Kind of architecture: Cortex M0+ Memory: 20kB SRAM; 192kB FLASH Operating temperature: -40...85°C Family: STM32L0 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| STW75N60M6-4 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 288A; 446W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 288A Power dissipation: 446W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 32mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1.5KE33A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 33V; 33A; unidirectional; DO201; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 33A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack |
на замовлення 1954 шт: термін постачання 14-30 дні (днів) |
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VN5E160STR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 10A; Ch: 1; SMD; SO8; reel,tape; 4.5÷28V Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 10A Number of channels: 1 Mounting: SMD Case: SO8 On-state resistance: 0.32Ω Kind of package: reel; tape Operating temperature: -40...150°C Supply voltage: 4.5...28V |
на замовлення 20203 шт: термін постачання 14-30 дні (днів) |
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STM32F767IGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 140 Case: LQFP176 Supply voltage: 1.7...3.6V DC Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: TRNG Memory: 512kB SRAM; 1MB FLASH Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Number of 16bit timers: 12 Number of 32bit timers: 2 Family: STM32F7 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC34063EBN | STMicroelectronics |
Category: Voltage regulators - DC/DC circuitsDescription: Driver; DC/DC converter; Uin: 3÷40VDC; 1.5A; DIP8; THT; 33÷100kHz Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output current: 1.5A Case: DIP8 Mounting: THT Frequency: 33...100kHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube DC supply current: 2.5mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MC34063ECD-TR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuitsDescription: Driver; DC/DC converter; Uin: 3÷40VDC; 1.5A; SO8; SMD; 33÷100kHz Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 33...100kHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: 0...70°C Kind of package: reel; tape DC supply current: 2.5mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1.5KE100A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; DO201; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 85.5V Breakdown voltage: 100V Max. forward impulse current: 11A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack |
на замовлення 1386 шт: термін постачання 14-30 дні (днів) |
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SMAJ13A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 14.4V; 85A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4V Max. forward impulse current: 85A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 2872 шт: термін постачання 14-30 дні (днів) |
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SMAJ18CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 20V; 59A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20V Max. forward impulse current: 59A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 5700 шт: термін постачання 14-30 дні (днів) |
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SMBJ22A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 24.4÷25.7V; 83A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...25.7V Max. forward impulse current: 83A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 951 шт: термін постачання 14-30 дні (днів) |
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STF12N50DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 25W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 16nC On-state resistance: 0.35Ω Kind of channel: enhancement Drain current: 11A Pulsed drain current: 44A Gate-source voltage: ±25V Drain-source voltage: 500V |
на замовлення 454 шт: термін постачання 14-30 дні (днів) |
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| STF12N50M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 85W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 85W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 15nC On-state resistance: 0.38Ω Kind of channel: enhancement Drain current: 10A Pulsed drain current: 40A Gate-source voltage: ±25V Drain-source voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STM8AF5288TDX | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3 Mounting: SMD Kind of core: 8-bit Type of integrated circuit: STM8 microcontroller Integrated circuit features: AWU; Beeper; IWDG; WWDG Case: LQFP48 Family: STM8AF Number of 8bit timers: 1 Supply voltage: 3...5.5V DC Number of 16bit timers: 3 Number of PWM channels: 4 Number of 10bit A/D converters: 10 Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH Clock frequency: 24MHz Interface: CAN; I2C; SPI; UART; USART |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM8AF5288TDY | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3 Mounting: SMD Kind of core: 8-bit Type of integrated circuit: STM8 microcontroller Integrated circuit features: AWU; Beeper; IWDG; WWDG Case: LQFP48 Family: STM8AF Number of 8bit timers: 1 Supply voltage: 3...5.5V DC Number of 16bit timers: 3 Number of PWM channels: 4 Number of 10bit A/D converters: 10 Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH Clock frequency: 24MHz Interface: CAN; I2C; SPI; UART; USART |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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Z0110MN 5AA4 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; SOT223; Igt: 25mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 25mA Max. forward impulse current: 8A Mounting: SMD Kind of package: reel; tape |
на замовлення 601 шт: термін постачання 14-30 дні (днів) |
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TLVH431BIL5T | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±0.25%; SOT23-5; reel,tape Kind of package: reel; tape Mounting: SMD Case: SOT23-5 Operating temperature: -40...125°C Maximum output current: 60mA Tolerance: ±0.25% Reference voltage: 1.24V Operating voltage: 1.24...18V Type of integrated circuit: voltage reference source |
на замовлення 2280 шт: термін постачання 14-30 дні (днів) |
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| STM8S208C6T6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3 Type of integrated circuit: STM8 microcontroller Interface: CAN; I2C; IrDA; SPI; UART x2 Case: LQFP48 Mounting: SMD Integrated circuit features: Beeper; IWDG; WWDG Supply voltage: 3...5.5V DC Number of 10bit A/D converters: 10 Memory: 2kB EEPROM; 6kB RAM; 32kB FLASH Kind of core: 8-bit Clock frequency: 24MHz Family: STM8S Number of 8bit timers: 1 Number of 16bit timers: 3 Number of PWM channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAR42FILM | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.1A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.75A Kind of package: reel; tape |
на замовлення 5705 шт: термін постачання 14-30 дні (днів) |
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| STP25N60M2-EP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 11.3A; Idm: 72A Polarisation: unipolar Gate charge: 29nC On-state resistance: 188mΩ Drain current: 11.3A Gate-source voltage: ±25V Power dissipation: 150W Pulsed drain current: 72A Case: TO220-3 Drain-source voltage: 600V Kind of channel: enhancement Technology: MDmesh™ M2 Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STW25N60M2-EP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11.3A; Idm: 72A; 150W; TO247 Polarisation: unipolar Gate charge: 29nC On-state resistance: 0.175Ω Drain current: 11.3A Gate-source voltage: ±25V Power dissipation: 150W Pulsed drain current: 72A Case: TO247 Drain-source voltage: 650V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ13A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 15.2V Max. forward impulse current: 29A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 1878 шт: термін постачання 14-30 дні (днів) |
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SMBJ154A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 171÷180V; 12.6A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 154V Breakdown voltage: 171...180V Max. forward impulse current: 12.6A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 1962 шт: термін постачання 14-30 дні (днів) |
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STW11NK100Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 8.3A Power dissipation: 230W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 447 шт: термін постачання 14-30 дні (днів) |
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T1235T-8T | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 95A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35mA Mounting: THT Kind of package: tube Max. forward impulse current: 95A |
на замовлення 202 шт: термін постачання 14-30 дні (днів) |
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TLVH431LIL3T | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1.5%; SOT23-3; reel,tape Kind of package: reel; tape Mounting: SMD Case: SOT23-3 Operating temperature: -40...125°C Maximum output current: 60mA Tolerance: ±1.5% Reference voltage: 1.24V Operating voltage: 1.24...18V Type of integrated circuit: voltage reference source |
на замовлення 2878 шт: термін постачання 14-30 дні (днів) |
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TLVH431MIL3T | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1%; SOT23-3; reel,tape; 60mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: SOT23-3 Operating temperature: -40...125°C Operating voltage: 1.24...18V Kind of package: reel; tape Maximum output current: 60mA |
на замовлення 1629 шт: термін постачання 14-30 дні (днів) |
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TIP32C | STMicroelectronics |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 40W |
на замовлення 1312 шт: термін постачання 14-30 дні (днів) |
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TIP127 | STMicroelectronics |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 5A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 65W |
на замовлення 2313 шт: термін постачання 14-30 дні (днів) |
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TIP147T | STMicroelectronics |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 10A; 90W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 10A Power dissipation: 90W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 244 шт: термін постачання 14-30 дні (днів) |
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STE145N65M5 | STMicroelectronics |
Category: Transistor modules MOSFETDescription: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W Polarisation: unipolar On-state resistance: 12mΩ Gate-source voltage: ±25V Drain current: 90A Pulsed drain current: 572A Power dissipation: 679W Drain-source voltage: 650V Kind of package: tube Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Technology: MDmesh™; MESH OVERLAY™; PowerMesh™ Mechanical mounting: screw Electrical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STY145N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 87A Power dissipation: 625W Case: MAX247 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP08CP05TTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; TSSOP16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: TSSOP16 Output current: 5...100mA Number of channels: 8 Integrated circuit features: shift register Mounting: SMD Input voltage: 3...5.5V Frequency: 30MHz Kind of package: reel; tape Operating temperature: -40...125°C Output voltage: 1.3...20V |
на замовлення 2454 шт: термін постачання 14-30 дні (днів) |
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VIPER06HSTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver; buck,flyback; AC/DC switcher,PWM controller; SSO10 Type of integrated circuit: driver Topology: buck; flyback Kind of integrated circuit: AC/DC switcher; PWM controller Case: SSO10 Output current: 1A Output voltage: 800V Number of channels: 1 Mounting: SMD Operating temperature: -40...150°C Application: SMPS Operating voltage: 7...23.5V DC Frequency: 103...127kHz Kind of package: reel; tape Supply voltage: 12...23.5V Duty cycle factor: 0...80% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT30CWFILM | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: common cathode; double Max. forward voltage: 0.53V Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 2840 шт: термін постачання 14-30 дні (днів) |
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| SCTW60N120G2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 389W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 94nC
On-state resistance: 52mΩ
Drain current: 60A
Power dissipation: 389W
Pulsed drain current: 177A
Drain-source voltage: 1.2kV
Case: HIP247™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 389W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 94nC
On-state resistance: 52mΩ
Drain current: 60A
Power dissipation: 389W
Pulsed drain current: 177A
Drain-source voltage: 1.2kV
Case: HIP247™
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од. на суму грн.
| SCTWA60N120G2-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 389W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 94nC
On-state resistance: 52mΩ
Drain current: 60A
Power dissipation: 389W
Pulsed drain current: 177A
Drain-source voltage: 1.2kV
Case: HIP247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 389W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 94nC
On-state resistance: 52mΩ
Drain current: 60A
Power dissipation: 389W
Pulsed drain current: 177A
Drain-source voltage: 1.2kV
Case: HIP247-4
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| LD39100PU12RY |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DFN6; SMD; 2÷3%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.2V
Output current: 1A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39100
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.5...5.5V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; DFN6; SMD; 2÷3%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.2V
Output current: 1A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39100
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.5...5.5V
Application: automotive industry
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| LD39100PURY |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8÷4.5V; 1A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 0.8...4.5V
Output current: 1A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39100
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.5...5.5V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8÷4.5V; 1A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 0.8...4.5V
Output current: 1A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39100
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.5...5.5V
Application: automotive industry
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| LD39130SJ30R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; flip chip4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.3A
Case: flip chip4
Mounting: SMD
Manufacturer series: LD39130S
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 1.4...5.5V
Integrated circuit features: GREEN MODE pin; shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; flip chip4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.3A
Case: flip chip4
Mounting: SMD
Manufacturer series: LD39130S
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 1.4...5.5V
Integrated circuit features: GREEN MODE pin; shutdown mode control input
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| STGW30NC60WD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 76 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 281.99 грн |
| 10+ | 240.87 грн |
| M74HC08YTTR |
Виробник: STMicroelectronics
Category: Gates, inverters
Description: IC: digital; logic gate; AND; Ch: 4; IN: 2; SMD; TSSOP14; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Kind of integrated circuit: logic gate
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Quiescent current: 1µA
Supply voltage: 2...6V DC
Manufacturer series: HC
Family: HC
Case: TSSOP14
Category: Gates, inverters
Description: IC: digital; logic gate; AND; Ch: 4; IN: 2; SMD; TSSOP14; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Kind of integrated circuit: logic gate
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Quiescent current: 1µA
Supply voltage: 2...6V DC
Manufacturer series: HC
Family: HC
Case: TSSOP14
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| P6KE33CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 33V; 13.1A; bidirectional; ±5%; DO15; Ammo Pack; 600W
Type of diode: TVS
Max. off-state voltage: 28V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 33V; 13.1A; bidirectional; ±5%; DO15; Ammo Pack; 600W
Type of diode: TVS
Max. off-state voltage: 28V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
на замовлення 7368 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.27 грн |
| 22+ | 19.39 грн |
| 100+ | 12.92 грн |
| 500+ | 9.74 грн |
| 1000+ | 8.73 грн |
| STM32F746BGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; DCMI; FMC; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 320kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; DCMI; FMC; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 320kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
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| SMBJ12CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 13.3÷14V; 157A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14V
Max. forward impulse current: 157A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 13.3÷14V; 157A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14V
Max. forward impulse current: 157A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 2570 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.56 грн |
| 39+ | 10.99 грн |
| 42+ | 10.07 грн |
| 50+ | 9.40 грн |
| 100+ | 8.81 грн |
| 500+ | 7.55 грн |
| 1000+ | 6.88 грн |
| 2500+ | 6.13 грн |
| SCTW35N65G2V |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 240W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 240W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 732.10 грн |
| STPS3045CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.57V
Max. load current: 30A
Max. forward impulse current: 220A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.57V
Max. load current: 30A
Max. forward impulse current: 220A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
на замовлення 235 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 83.15 грн |
| 9+ | 49.68 грн |
| 11+ | 39.28 грн |
| STM32F103T4U6A |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F1
Supply voltage: 2...3.6V DC
Number of 16bit timers: 3
Number of inputs/outputs: 26
Memory: 6kB SRAM; 16kB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; SPI; USB
Kind of architecture: Cortex M3
Case: VFQFPN36
Mounting: SMD
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F1
Supply voltage: 2...3.6V DC
Number of 16bit timers: 3
Number of inputs/outputs: 26
Memory: 6kB SRAM; 16kB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; SPI; USB
Kind of architecture: Cortex M3
Case: VFQFPN36
Mounting: SMD
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| STM32F103T6U6A |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F1
Supply voltage: 2...3.6V DC
Number of 16bit timers: 3
Number of inputs/outputs: 26
Memory: 10kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; SPI; USB
Kind of architecture: Cortex M3
Case: VFQFPN36
Mounting: SMD
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F1
Supply voltage: 2...3.6V DC
Number of 16bit timers: 3
Number of inputs/outputs: 26
Memory: 10kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; SPI; USB
Kind of architecture: Cortex M3
Case: VFQFPN36
Mounting: SMD
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| LM2904WHDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...150°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 9mV
Kind of package: reel; tape
Application: automotive industry
Input bias current: 0.2µA
Input offset current: 40nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...150°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 9mV
Kind of package: reel; tape
Application: automotive industry
Input bias current: 0.2µA
Input offset current: 40nA
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| LM2904WYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
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| SMBJ16A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.8÷18.7V; 116A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...18.7V
Max. forward impulse current: 116A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.8÷18.7V; 116A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...18.7V
Max. forward impulse current: 116A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
на замовлення 55 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.75 грн |
| STPST5H100UF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 100V; 5A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMB flat
Leakage current: 11.5µA
Max. forward impulse current: 130A
Max. forward voltage: 0.68V
Load current: 5A
Max. off-state voltage: 100V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 100V; 5A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMB flat
Leakage current: 11.5µA
Max. forward impulse current: 130A
Max. forward voltage: 0.68V
Load current: 5A
Max. off-state voltage: 100V
Kind of package: reel; tape
на замовлення 4790 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.48 грн |
| 17+ | 24.93 грн |
| 20+ | 21.74 грн |
| 100+ | 16.20 грн |
| 500+ | 12.59 грн |
| 1000+ | 12.42 грн |
| TL432IL3T |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...105°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...105°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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| STP28N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 14A; Idm: 84A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 84A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 14A; Idm: 84A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 84A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 39 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 291.03 грн |
| 10+ | 159.46 грн |
| LF90CPT-TR |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 0.5A; PPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Output current: 0.5A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Case: PPAK
Kind of package: reel; tape
Manufacturer series: LFXX
Output voltage: 9V
Tolerance: ±2%
Input voltage: 2.5...16V
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 0.5A; PPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Output current: 0.5A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Case: PPAK
Kind of package: reel; tape
Manufacturer series: LFXX
Output voltage: 9V
Tolerance: ±2%
Input voltage: 2.5...16V
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
на замовлення 2497 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 124.73 грн |
| 10+ | 73.77 грн |
| 25+ | 65.46 грн |
| 50+ | 59.59 грн |
| 100+ | 54.22 грн |
| 250+ | 47.84 грн |
| 500+ | 43.47 грн |
| 1000+ | 39.53 грн |
| STM32F051R6T6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 55
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C; SPI; UART x2
Kind of architecture: Cortex M0
Memory: 8kB SRAM; 32kB FLASH
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 55
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C; SPI; UART x2
Kind of architecture: Cortex M0
Memory: 8kB SRAM; 32kB FLASH
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
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| SG3525 |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; PWM controller; SO16; 100mA; 5V; Ch: 2; 8÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: PWM controller
Case: SO16
Output current: 0.1A
Output voltage: 5V
Number of channels: 2
Supply voltage: 8...35V DC
Mounting: SMD
Category: Voltage regulators - PWM circuits
Description: IC: driver; PWM controller; SO16; 100mA; 5V; Ch: 2; 8÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: PWM controller
Case: SO16
Output current: 0.1A
Output voltage: 5V
Number of channels: 2
Supply voltage: 8...35V DC
Mounting: SMD
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| 2N3055 |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 115W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Case: TO3
Mounting: THT
Power: 115W
Frequency: 1MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 115W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Case: TO3
Mounting: THT
Power: 115W
Frequency: 1MHz
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| STW12NK80Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 19 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 242.22 грн |
| 10+ | 193.87 грн |
| STM32L073VZT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP100; 1.65÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 84
Case: LQFP100
Supply voltage: 1.65...3.6V DC
Interface: I2C x3; I2S; SPI x6; USART x4; USB
Kind of architecture: Cortex M0+
Memory: 20kB SRAM; 192kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP100; 1.65÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 84
Case: LQFP100
Supply voltage: 1.65...3.6V DC
Interface: I2C x3; I2S; SPI x6; USART x4; USB
Kind of architecture: Cortex M0+
Memory: 20kB SRAM; 192kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
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| STW75N60M6-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 288A; 446W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 288A
Power dissipation: 446W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 288A; 446W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 288A
Power dissipation: 446W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| 1.5KE33A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 33V; 33A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 33V; 33A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
на замовлення 1954 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.21 грн |
| 21+ | 20.23 грн |
| 100+ | 15.86 грн |
| 250+ | 14.18 грн |
| VN5E160STR-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; SMD; SO8; reel,tape; 4.5÷28V
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Mounting: SMD
Case: SO8
On-state resistance: 0.32Ω
Kind of package: reel; tape
Operating temperature: -40...150°C
Supply voltage: 4.5...28V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; SMD; SO8; reel,tape; 4.5÷28V
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Mounting: SMD
Case: SO8
On-state resistance: 0.32Ω
Kind of package: reel; tape
Operating temperature: -40...150°C
Supply voltage: 4.5...28V
на замовлення 20203 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 60.43 грн |
| 10+ | 57.91 грн |
| 25+ | 50.36 грн |
| 100+ | 47.00 грн |
| STM32F767IGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 140
Case: LQFP176
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 2
Family: STM32F7
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 140
Case: LQFP176
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 2
Family: STM32F7
Kind of core: 32-bit
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| MC34063EBN | ![]() |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 3÷40VDC; 1.5A; DIP8; THT; 33÷100kHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Frequency: 33...100kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
DC supply current: 2.5mA
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 3÷40VDC; 1.5A; DIP8; THT; 33÷100kHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Frequency: 33...100kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
DC supply current: 2.5mA
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| MC34063ECD-TR |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 3÷40VDC; 1.5A; SO8; SMD; 33÷100kHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 33...100kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: 0...70°C
Kind of package: reel; tape
DC supply current: 2.5mA
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 3÷40VDC; 1.5A; SO8; SMD; 33÷100kHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 33...100kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: 0...70°C
Kind of package: reel; tape
DC supply current: 2.5mA
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| 1.5KE100A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
на замовлення 1386 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.60 грн |
| 25+ | 17.29 грн |
| 50+ | 15.44 грн |
| 100+ | 14.69 грн |
| 500+ | 13.85 грн |
| SMAJ13A-TR | ![]() |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4V; 85A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4V; 85A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 2872 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 18.08 грн |
| 1000+ | 7.39 грн |
| SMAJ18CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20V; 59A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 59A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20V; 59A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 59A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 5700 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.04 грн |
| 1000+ | 7.64 грн |
| 3000+ | 6.80 грн |
| 5000+ | 6.46 грн |
| SMBJ22A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24.4÷25.7V; 83A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...25.7V
Max. forward impulse current: 83A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24.4÷25.7V; 83A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...25.7V
Max. forward impulse current: 83A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 951 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.60 грн |
| STF12N50DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 16nC
On-state resistance: 0.35Ω
Kind of channel: enhancement
Drain current: 11A
Pulsed drain current: 44A
Gate-source voltage: ±25V
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 16nC
On-state resistance: 0.35Ω
Kind of channel: enhancement
Drain current: 11A
Pulsed drain current: 44A
Gate-source voltage: ±25V
Drain-source voltage: 500V
на замовлення 454 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 165.40 грн |
| 10+ | 99.87 грн |
| 25+ | 88.12 грн |
| 50+ | 84.77 грн |
| STF12N50M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 85W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 85W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Drain current: 10A
Pulsed drain current: 40A
Gate-source voltage: ±25V
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 85W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 85W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Drain current: 10A
Pulsed drain current: 40A
Gate-source voltage: ±25V
Drain-source voltage: 500V
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| STM8AF5288TDX |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Mounting: SMD
Kind of core: 8-bit
Type of integrated circuit: STM8 microcontroller
Integrated circuit features: AWU; Beeper; IWDG; WWDG
Case: LQFP48
Family: STM8AF
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH
Clock frequency: 24MHz
Interface: CAN; I2C; SPI; UART; USART
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Mounting: SMD
Kind of core: 8-bit
Type of integrated circuit: STM8 microcontroller
Integrated circuit features: AWU; Beeper; IWDG; WWDG
Case: LQFP48
Family: STM8AF
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH
Clock frequency: 24MHz
Interface: CAN; I2C; SPI; UART; USART
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| STM8AF5288TDY |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Mounting: SMD
Kind of core: 8-bit
Type of integrated circuit: STM8 microcontroller
Integrated circuit features: AWU; Beeper; IWDG; WWDG
Case: LQFP48
Family: STM8AF
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH
Clock frequency: 24MHz
Interface: CAN; I2C; SPI; UART; USART
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Mounting: SMD
Kind of core: 8-bit
Type of integrated circuit: STM8 microcontroller
Integrated circuit features: AWU; Beeper; IWDG; WWDG
Case: LQFP48
Family: STM8AF
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH
Clock frequency: 24MHz
Interface: CAN; I2C; SPI; UART; USART
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| Z0110MN 5AA4 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 25mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 8A
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 25mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 8A
Mounting: SMD
Kind of package: reel; tape
на замовлення 601 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.25 грн |
| 20+ | 21.65 грн |
| 50+ | 15.69 грн |
| 100+ | 13.60 грн |
| 500+ | 9.57 грн |
| TLVH431BIL5T |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.25%; SOT23-5; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Maximum output current: 60mA
Tolerance: ±0.25%
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.25%; SOT23-5; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Maximum output current: 60mA
Tolerance: ±0.25%
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Type of integrated circuit: voltage reference source
на замовлення 2280 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.60 грн |
| 26+ | 16.62 грн |
| 29+ | 14.69 грн |
| 34+ | 12.59 грн |
| 100+ | 10.41 грн |
| 250+ | 9.57 грн |
| 500+ | 8.90 грн |
| STM8S208C6T6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Interface: CAN; I2C; IrDA; SPI; UART x2
Case: LQFP48
Mounting: SMD
Integrated circuit features: Beeper; IWDG; WWDG
Supply voltage: 3...5.5V DC
Number of 10bit A/D converters: 10
Memory: 2kB EEPROM; 6kB RAM; 32kB FLASH
Kind of core: 8-bit
Clock frequency: 24MHz
Family: STM8S
Number of 8bit timers: 1
Number of 16bit timers: 3
Number of PWM channels: 4
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Interface: CAN; I2C; IrDA; SPI; UART x2
Case: LQFP48
Mounting: SMD
Integrated circuit features: Beeper; IWDG; WWDG
Supply voltage: 3...5.5V DC
Number of 10bit A/D converters: 10
Memory: 2kB EEPROM; 6kB RAM; 32kB FLASH
Kind of core: 8-bit
Clock frequency: 24MHz
Family: STM8S
Number of 8bit timers: 1
Number of 16bit timers: 3
Number of PWM channels: 4
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| BAR42FILM |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.75A
Kind of package: reel; tape
на замовлення 5705 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.23 грн |
| 77+ | 5.46 грн |
| 118+ | 3.58 грн |
| 500+ | 2.77 грн |
| 1000+ | 2.53 грн |
| 3000+ | 2.21 грн |
| STP25N60M2-EP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 11.3A; Idm: 72A
Polarisation: unipolar
Gate charge: 29nC
On-state resistance: 188mΩ
Drain current: 11.3A
Gate-source voltage: ±25V
Power dissipation: 150W
Pulsed drain current: 72A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Technology: MDmesh™ M2
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 11.3A; Idm: 72A
Polarisation: unipolar
Gate charge: 29nC
On-state resistance: 188mΩ
Drain current: 11.3A
Gate-source voltage: ±25V
Power dissipation: 150W
Pulsed drain current: 72A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Technology: MDmesh™ M2
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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| STW25N60M2-EP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.3A; Idm: 72A; 150W; TO247
Polarisation: unipolar
Gate charge: 29nC
On-state resistance: 0.175Ω
Drain current: 11.3A
Gate-source voltage: ±25V
Power dissipation: 150W
Pulsed drain current: 72A
Case: TO247
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.3A; Idm: 72A; 150W; TO247
Polarisation: unipolar
Gate charge: 29nC
On-state resistance: 0.175Ω
Drain current: 11.3A
Gate-source voltage: ±25V
Power dissipation: 150W
Pulsed drain current: 72A
Case: TO247
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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| SMBJ13A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 1878 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 18.08 грн |
| 31+ | 13.93 грн |
| 33+ | 12.92 грн |
| 50+ | 10.83 грн |
| 100+ | 10.07 грн |
| 500+ | 8.56 грн |
| 1000+ | 7.97 грн |
| 1300+ | 7.89 грн |
| SMBJ154A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 171÷180V; 12.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 154V
Breakdown voltage: 171...180V
Max. forward impulse current: 12.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 171÷180V; 12.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 154V
Breakdown voltage: 171...180V
Max. forward impulse current: 12.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 1962 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.13 грн |
| 75+ | 7.39 грн |
| 100+ | 7.30 грн |
| 150+ | 7.13 грн |
| STW11NK100Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 8.3A
Power dissipation: 230W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 8.3A
Power dissipation: 230W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 447 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 368.76 грн |
| 10+ | 219.05 грн |
| 20+ | 200.58 грн |
| 30+ | 191.35 грн |
| 90+ | 167.01 грн |
| 120+ | 163.66 грн |
| 150+ | 161.14 грн |
| T1235T-8T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 95A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 95A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
на замовлення 202 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 110.27 грн |
| 10+ | 56.82 грн |
| 50+ | 48.34 грн |
| 100+ | 44.90 грн |
| TLVH431LIL3T |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1.5%; SOT23-3; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...125°C
Maximum output current: 60mA
Tolerance: ±1.5%
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1.5%; SOT23-3; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...125°C
Maximum output current: 60mA
Tolerance: ±1.5%
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Type of integrated circuit: voltage reference source
на замовлення 2878 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.46 грн |
| 40+ | 10.74 грн |
| 43+ | 9.99 грн |
| 47+ | 9.06 грн |
| 100+ | 7.89 грн |
| 250+ | 7.13 грн |
| 500+ | 6.88 грн |
| 1000+ | 6.46 грн |
| TLVH431MIL3T |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23-3; reel,tape; 60mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...125°C
Operating voltage: 1.24...18V
Kind of package: reel; tape
Maximum output current: 60mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23-3; reel,tape; 60mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...125°C
Operating voltage: 1.24...18V
Kind of package: reel; tape
Maximum output current: 60mA
на замовлення 1629 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.17 грн |
| 31+ | 13.76 грн |
| 35+ | 12.09 грн |
| 41+ | 10.24 грн |
| 50+ | 9.06 грн |
| 100+ | 8.73 грн |
| TIP32C |
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Виробник: STMicroelectronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 40W
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 40W
на замовлення 1312 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.46 грн |
| 12+ | 36.34 грн |
| 50+ | 23.92 грн |
| 100+ | 20.14 грн |
| 250+ | 16.28 грн |
| TIP127 |
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Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 65W
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 65W
на замовлення 2313 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.52 грн |
| 13+ | 33.99 грн |
| 50+ | 26.77 грн |
| 100+ | 24.09 грн |
| 500+ | 19.14 грн |
| 1000+ | 17.20 грн |
| 2000+ | 16.28 грн |
| TIP147T | ![]() |
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Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 90W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 90W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 244 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.17 грн |
| 5+ | 113.30 грн |
| 10+ | 99.03 грн |
| 50+ | 73.86 грн |
| 100+ | 65.46 грн |
| 200+ | 59.59 грн |
| STE145N65M5 |
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Виробник: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W
Polarisation: unipolar
On-state resistance: 12mΩ
Gate-source voltage: ±25V
Drain current: 90A
Pulsed drain current: 572A
Power dissipation: 679W
Drain-source voltage: 650V
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Case: ISOTOP
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Mechanical mounting: screw
Electrical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W
Polarisation: unipolar
On-state resistance: 12mΩ
Gate-source voltage: ±25V
Drain current: 90A
Pulsed drain current: 572A
Power dissipation: 679W
Drain-source voltage: 650V
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Case: ISOTOP
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Mechanical mounting: screw
Electrical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| STY145N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 87A
Power dissipation: 625W
Case: MAX247
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 87A
Power dissipation: 625W
Case: MAX247
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| STP08CP05TTR |
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Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; TSSOP16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TSSOP16
Output current: 5...100mA
Number of channels: 8
Integrated circuit features: shift register
Mounting: SMD
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Operating temperature: -40...125°C
Output voltage: 1.3...20V
Category: LED drivers
Description: IC: driver; LED driver; TSSOP16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TSSOP16
Output current: 5...100mA
Number of channels: 8
Integrated circuit features: shift register
Mounting: SMD
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Operating temperature: -40...125°C
Output voltage: 1.3...20V
на замовлення 2454 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.23 грн |
| 12+ | 38.10 грн |
| 25+ | 37.77 грн |
| VIPER06HSTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; buck,flyback; AC/DC switcher,PWM controller; SSO10
Type of integrated circuit: driver
Topology: buck; flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SSO10
Output current: 1A
Output voltage: 800V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7...23.5V DC
Frequency: 103...127kHz
Kind of package: reel; tape
Supply voltage: 12...23.5V
Duty cycle factor: 0...80%
Category: Voltage regulators - PWM circuits
Description: IC: driver; buck,flyback; AC/DC switcher,PWM controller; SSO10
Type of integrated circuit: driver
Topology: buck; flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SSO10
Output current: 1A
Output voltage: 800V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7...23.5V DC
Frequency: 103...127kHz
Kind of package: reel; tape
Supply voltage: 12...23.5V
Duty cycle factor: 0...80%
товару немає в наявності
В кошику
од. на суму грн.
| BAT30CWFILM |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 2840 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.23 грн |
| 100+ | 5.52 грн |
| 250+ | 4.78 грн |
| 500+ | 4.25 грн |
| 1000+ | 3.73 грн |

































