Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (132774) > Сторінка 2104 з 2213
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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STW9NK90Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 134 шт: термін постачання 14-30 дні (днів) |
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STB6N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK Type of transistor: N-MOSFET Power dissipation: 60W Case: D2PAK Mounting: SMD Drain current: 4.5A Drain-source voltage: 600V On-state resistance: 1.2mΩ Gate charge: 8nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STD6N60DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252 Type of transistor: N-MOSFET Power dissipation: 60W Case: DPAK; TO252 Mounting: SMD Drain current: 5A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 1.1Ω Gate charge: 6.2nC Polarisation: unipolar Technology: MDmesh™ |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STM32F427ZIT7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG Number of inputs/outputs: 114 Type of integrated circuit: STM32 ARM microcontroller Operating temperature: -40...105°C Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Kind of architecture: Cortex M4 Clock frequency: 180MHz Kind of core: 32-bit Memory: 256kB SRAM; 2MB FLASH Number of 12bit D/A converters: 2 Kind of package: in-tray Number of 16bit timers: 14 Number of 12bit A/D converters: 24 Case: LQFP144 Family: STM32F4 Mounting: SMD Supply voltage: 1.8...3.6V DC |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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SM6T36A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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Z0107MA 2AL2 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; Igt: 5mA; TO92; Ammo Pack; Ifsm: 8A Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 5mA Case: TO92 Mounting: THT Kind of package: Ammo Pack Max. forward impulse current: 8A |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS5L40 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V Type of diode: Schottky rectifying Case: DO201AD Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. load current: 15A Max. forward impulse current: 150A Kind of package: Ammo Pack Leakage current: 75mA |
на замовлення 667 шт: термін постачання 14-30 дні (днів) |
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Z0405MH | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 4A; Igt: 5mA; IPAK; tube; Ifsm: 16A Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 4A Gate current: 5mA Case: IPAK Mounting: THT Kind of package: tube Max. forward impulse current: 16A |
на замовлення 671 шт: термін постачання 14-30 дні (днів) |
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SM15T30A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1403 шт: термін постачання 14-30 дні (днів) |
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SM15T30CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 3044 шт: термін постачання 14-30 дні (днів) |
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| VNS3NV04PTR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOIC8 On-state resistance: 0.12Ω Active logical level: low Operating temperature: -40...150°C Integrated circuit features: thermal protection |
на замовлення 7500 шт: термін постачання 14-30 дні (днів) |
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SMCJ33CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 38.6V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
на замовлення 2163 шт: термін постачання 14-30 дні (днів) |
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STL120N10F8 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 125A Pulsed drain current: 500A Power dissipation: 150W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2990 шт: термін постачання 14-30 дні (днів) |
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| VL53L3CXV0DH/1 | STMicroelectronics |
Category: UnclassifiedDescription: VL53L3CXV0DH/1 |
на замовлення 4500 шт: термін постачання 14-30 дні (днів) |
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STF20N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Power dissipation: 30W Case: TO220FP Mounting: THT Drain current: 18A Kind of channel: enhancement Drain-source voltage: 650V On-state resistance: 0.19Ω Polarisation: unipolar |
на замовлення 286 шт: термін постачання 14-30 дні (днів) |
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MJD45H11T4 | STMicroelectronics |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 40 Mounting: SMD Kind of package: reel; tape |
на замовлення 527 шт: термін постачання 14-30 дні (днів) |
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STP110N10F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 76A Pulsed drain current: 415A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Technology: STripFET™ F7 |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
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BTB04-600SL | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 4A; Igt: 10mA; TO220AB; tube Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 4A Gate current: 10mA Case: TO220AB Mounting: THT Kind of package: tube Features of semiconductor devices: lighting application |
на замовлення 300 шт: термін постачання 14-30 дні (днів) |
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STP16N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 44A Gate charge: 19.5nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STD16N65M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 110W Case: DPAK; TO252 On-state resistance: 0.32Ω Mounting: SMD Kind of channel: enhancement Gate charge: 19.5nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| STH315N10F7-2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 315W Case: H2PAK-2 On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 180nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
| STH315N10F7-6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W Type of transistor: N-MOSFET Technology: STripFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 315W Case: TO263-7 On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 180nC Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
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STP200N3LL | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W Pulsed drain current: 480A Power dissipation: 176.5W Gate charge: 53nC Polarisation: unipolar Drain current: 120A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 2.4mΩ Mounting: THT |
на замовлення 153 шт: термін постачання 14-30 дні (днів) |
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LM833DT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV Type of integrated circuit: operational amplifier Bandwidth: 15MHz Number of channels: 2 Mounting: SMT Voltage supply range: 5...30V DC Case: SO8 Operating temperature: -40...105°C Slew rate: 7V/μs Integrated circuit features: low noise Input offset voltage: 0.3mV Kind of package: reel; tape |
на замовлення 4186 шт: термін постачання 14-30 дні (днів) |
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MC1458IDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8 Type of integrated circuit: operational amplifier Number of channels: 2 Mounting: SMT Case: SO8 Operating temperature: -40...105°C Kind of package: reel; tape Quiescent current: 2.3mA Input offset current: 300nA Bandwidth: 1MHz Input offset voltage: 6mV Slew rate: 0.8V/μs Input bias current: 0.8µA Voltage supply range: ± 2.5...15V DC; 5...30V DC |
на замовлення 148 шт: термін постачання 14-30 дні (днів) |
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MC1458DT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8 Type of integrated circuit: operational amplifier Number of channels: 2 Mounting: SMT Case: SO8 Operating temperature: 0...70°C Kind of package: reel; tape Quiescent current: 2.3mA Input offset current: 300nA Bandwidth: 1MHz Input offset voltage: 6mV Slew rate: 0.8V/μs Input bias current: 0.8µA Voltage supply range: ± 2.5...15V DC; 5...30V DC |
на замовлення 2442 шт: термін постачання 14-30 дні (днів) |
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LD39150PT-R | STMicroelectronics |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK Manufacturer series: LD39150 Tolerance: 1.5...3% Mounting: SMD Kind of voltage regulator: adjustable; LDO; linear Input voltage: 2.5...6V Output current: 1.5A Type of integrated circuit: voltage regulator Voltage drop: 0.4V Operating temperature: -40...125°C Output voltage: 1.22...5V Kind of package: reel; tape Case: PPAK Number of channels: 1 |
на замовлення 2387 шт: термін постачання 14-30 дні (днів) |
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| LD39150PU-R | STMicroelectronics |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6 Manufacturer series: LD39150 Tolerance: 1.5...3% Mounting: SMD Kind of voltage regulator: adjustable; LDO; linear Input voltage: 2.5...6V Output current: 1.5A Type of integrated circuit: voltage regulator Voltage drop: 0.4V Operating temperature: -40...125°C Output voltage: 1.22...5V Kind of package: reel; tape Case: DFN6 Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STF4N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
на замовлення 62 шт: термін постачання 14-30 дні (днів) |
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STP4N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| STL4N80K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 38W Case: PowerFLAT 5x6 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STD4N80K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.7A Pulsed drain current: 12A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| STU4N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Power dissipation: 60W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STP14N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.4A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 445mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 48A Gate charge: 22nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| STM32L052K8U6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog Kind of architecture: Cortex M0+ Clock frequency: 32MHz Kind of core: 32-bit Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH Number of 12bit D/A converters: 1 Kind of package: in-tray Number of 16bit timers: 5 Number of 12bit A/D converters: 10 Case: UFQFPN32 Interface: I2C; SPI x3; USART x2; USB Family: STM32L0 Mounting: SMD Supply voltage: 1.8...3.6V DC Number of inputs/outputs: 27 Type of integrated circuit: STM32 ARM microcontroller Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STM8S207K8T6C | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 24MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3 Interface: I2C; IrDA; SPI; UART Type of integrated circuit: STM8 microcontroller Integrated circuit features: Beeper; IWDG; WWDG Clock frequency: 24MHz Kind of core: 8-bit Memory: 1kB EEPROM; 6kB RAM; 64kB FLASH Number of 8bit timers: 1 Number of PWM channels: 4 Number of 16bit timers: 3 Case: LQFP32 Number of 10bit A/D converters: 7 Family: STM8S Mounting: SMD Supply voltage: 3...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ACS120-7SB-TR | STMicroelectronics |
Category: Thyristors - othersDescription: Thyristor: AC switch; 700V; Ifmax: 2A; Igt: 10mA; DPAK; SMD; ASD™ Type of thyristor: AC switch Max. off-state voltage: 700V Max. load current: 2A Gate current: 10mA Case: DPAK Mounting: SMD Kind of package: reel; tape Technology: ASD™ Features of semiconductor devices: internally triggered Number of switches: 1 |
на замовлення 2301 шт: термін постачання 14-30 дні (днів) |
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M24C08-RMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
на замовлення 2296 шт: термін постачання 14-30 дні (днів) |
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M24C08-RDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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M24C08-FMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| M24C08-RMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| M24C08-FDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| M24C08-FMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STPS30L60CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Max. load current: 30A Max. forward impulse current: 230A Leakage current: 130mA Kind of package: tube Heatsink thickness: 1.23...1.32mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTA10-600CRG | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 10A; Igt: 25mA; TO220ABIns; tube Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 10A Gate current: 25mA Case: TO220ABIns Mounting: THT Kind of package: tube |
на замовлення 111 шт: термін постачання 14-30 дні (днів) |
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BTA10-800BWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 10A; Igt: 50mA; TO220ABIns; tube; Snubberless™ Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 10A Gate current: 50mA Case: TO220ABIns Mounting: THT Kind of package: tube Technology: Snubberless™ |
на замовлення 118 шт: термін постачання 14-30 дні (днів) |
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1.5KE56A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 56V; 19.5A; unidirectional; DO201; Ammo Pack Type of diode: TVS Max. off-state voltage: 47.8V Breakdown voltage: 56V Max. forward impulse current: 19.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
на замовлення 714 шт: термін постачання 14-30 дні (днів) |
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T1635H-6T | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 16A; Igt: 35mA; TO220AB; tube; Ifsm: 168A Mounting: THT Max. forward impulse current: 0.168kA Gate current: 35mA Features of semiconductor devices: high temperature Max. off-state voltage: 0.6kV Max. load current: 16A Kind of package: tube Case: TO220AB Typ of triac: standard |
на замовлення 250 шт: термін постачання 14-30 дні (днів) |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||||
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STB18N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; 110W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 110W Case: D2PAK; TO263 On-state resistance: 255mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 21.5nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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X-NUCLEO-IHM14A1 | STMicroelectronics |
Category: Add-on boardsDescription: Expansion board; Comp: STSPIN820; 7÷45VDC Components: STSPIN820 Interface: GPIO Connection: pin strips; screw terminal Associated circuits: STM32 development kits accessories features: stepper motor driver Type of accessories for development kits: expansion board Supply voltage: 7...45V DC |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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STGW80H65DFB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 80A; 470W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 470W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 414nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 264 шт: термін постачання 14-30 дні (днів) |
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STP20N90K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 13A; Idm: 80A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 900V Drain current: 13A Pulsed drain current: 80A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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L9613B013TR | STMicroelectronics |
Category: Interfaces others - integrated circuitsDescription: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; reel,tape Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 4.8...18V DC Interface: Bus Mounting: SMD Case: SO8 Operating temperature: -40...150°C Kind of package: reel; tape ISO standard: ISO 9141 |
на замовлення 1341 шт: термін постачання 14-30 дні (днів) |
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L9613B | STMicroelectronics |
Category: Interfaces others - integrated circuitsDescription: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; tube Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 4.8...18V DC Interface: Bus Mounting: SMD Case: SO8 Operating temperature: -40...150°C Kind of package: tube ISO standard: ISO 9141 |
на замовлення 495 шт: термін постачання 14-30 дні (днів) |
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1.5KE36CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 36V; 30A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 30A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack |
на замовлення 881 шт: термін постачання 14-30 дні (днів) |
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STM32L051C8T6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 32MHz; LQFP48; 1.65÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 32MHz Number of inputs/outputs: 37 Case: LQFP48 Supply voltage: 1.65...3.6V DC Interface: I2C x2; I2S; SPI x4; USART x2 Kind of architecture: Cortex M0+ Memory: 8kB SRAM; 64kB FLASH Family: STM32L0 Kind of core: 32-bit Mounting: SMD Operating temperature: -40...85°C |
на замовлення 92 шт: термін постачання 14-30 дні (днів) |
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STM32L051K8T6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.65÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 32MHz Number of inputs/outputs: 27 Case: LQFP32 Supply voltage: 1.65...3.6V DC Interface: I2C; IrDA; SPI; USART Kind of architecture: Cortex M0+ Memory: 8kB SRAM; 64kB FLASH Family: STM32L0 Kind of core: 32-bit Number of 12bit A/D converters: 10 Mounting: SMD Operating temperature: -40...85°C Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM |
на замовлення 41 шт: термін постачання 14-30 дні (днів) |
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STM32L031F6P6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 32MHz; TSSOP20; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 32MHz Number of inputs/outputs: 15 Case: TSSOP20 Supply voltage: 1.8...3.6V DC Interface: I2C; IrDA; LIN; SPI; USART Kind of architecture: Cortex M0+ Memory: 8kB SRAM; 32kB FLASH Family: STM32L0 Kind of core: 32-bit Number of 12bit A/D converters: 10 Mounting: SMD Operating temperature: -40...85°C Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM |
на замовлення 69 шт: термін постачання 14-30 дні (днів) |
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STM32L011F4P6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 32MHz; TSSOP20; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 32MHz Number of inputs/outputs: 16 Case: TSSOP20 Supply voltage: 1.8...3.6V DC Interface: I2C; IrDA; SPI; USART Kind of architecture: Cortex M0+ Memory: 2kB SRAM; 16kB FLASH Family: STM32L0 Kind of core: 32-bit Number of 12bit A/D converters: 9 Mounting: SMD Operating temperature: -40...85°C Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM |
на замовлення 91 шт: термін постачання 14-30 дні (днів) |
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STM32L051K6T6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.65÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 32MHz Number of inputs/outputs: 27 Case: LQFP32 Supply voltage: 1.65...3.6V DC Interface: I2C; IrDA; SPI; USART Kind of architecture: Cortex M0+ Memory: 8kB SRAM; 32kB FLASH Family: STM32L0 Kind of core: 32-bit Number of 12bit A/D converters: 10 Mounting: SMD Operating temperature: -40...85°C Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM |
на замовлення 113 шт: термін постачання 14-30 дні (днів) |
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| STW9NK90Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 134 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 305.73 грн |
| 10+ | 94.91 грн |
| 28+ | 89.96 грн |
| STB6N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 60W
Case: D2PAK
Mounting: SMD
Drain current: 4.5A
Drain-source voltage: 600V
On-state resistance: 1.2mΩ
Gate charge: 8nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 60W
Case: D2PAK
Mounting: SMD
Drain current: 4.5A
Drain-source voltage: 600V
On-state resistance: 1.2mΩ
Gate charge: 8nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STD6N60DM2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Power dissipation: 60W
Case: DPAK; TO252
Mounting: SMD
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 1.1Ω
Gate charge: 6.2nC
Polarisation: unipolar
Technology: MDmesh™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Power dissipation: 60W
Case: DPAK; TO252
Mounting: SMD
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 1.1Ω
Gate charge: 6.2nC
Polarisation: unipolar
Technology: MDmesh™
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STM32F427ZIT7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Number of inputs/outputs: 114
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...105°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M4
Clock frequency: 180MHz
Kind of core: 32-bit
Memory: 256kB SRAM; 2MB FLASH
Number of 12bit D/A converters: 2
Kind of package: in-tray
Number of 16bit timers: 14
Number of 12bit A/D converters: 24
Case: LQFP144
Family: STM32F4
Mounting: SMD
Supply voltage: 1.8...3.6V DC
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Number of inputs/outputs: 114
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...105°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M4
Clock frequency: 180MHz
Kind of core: 32-bit
Memory: 256kB SRAM; 2MB FLASH
Number of 12bit D/A converters: 2
Kind of package: in-tray
Number of 16bit timers: 14
Number of 12bit A/D converters: 24
Case: LQFP144
Family: STM32F4
Mounting: SMD
Supply voltage: 1.8...3.6V DC
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1236.27 грн |
| 2+ | 782.37 грн |
| SM6T36A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 444.38 грн |
| Z0107MA 2AL2 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; Igt: 5mA; TO92; Ammo Pack; Ifsm: 8A
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 8A
Category: Triacs
Description: Triac; 600V; 1A; Igt: 5mA; TO92; Ammo Pack; Ifsm: 8A
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 8A
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| STPS5L40 |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: Ammo Pack
Leakage current: 75mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: Ammo Pack
Leakage current: 75mA
на замовлення 667 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.22 грн |
| 41+ | 10.23 грн |
| 100+ | 7.51 грн |
| 250+ | 7.34 грн |
| 600+ | 7.18 грн |
| Z0405MH |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; Igt: 5mA; IPAK; tube; Ifsm: 16A
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 5mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 16A
Category: Triacs
Description: Triac; 600V; 4A; Igt: 5mA; IPAK; tube; Ifsm: 16A
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 5mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 16A
на замовлення 671 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.44 грн |
| 16+ | 26.90 грн |
| 19+ | 22.61 грн |
| 75+ | 14.11 грн |
| 150+ | 13.12 грн |
| 300+ | 12.79 грн |
| SM15T30A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1403 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 79.10 грн |
| 9+ | 51.33 грн |
| 10+ | 44.15 грн |
| 50+ | 33.09 грн |
| 100+ | 30.21 грн |
| 500+ | 26.16 грн |
| 1000+ | 24.35 грн |
| SM15T30CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 3044 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.11 грн |
| 16+ | 26.00 грн |
| 100+ | 24.10 грн |
| 2500+ | 21.54 грн |
| VNS3NV04PTR-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOIC8
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOIC8
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
на замовлення 7500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 58.66 грн |
| SMCJ33CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
на замовлення 2163 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 86.21 грн |
| 11+ | 37.63 грн |
| 50+ | 30.54 грн |
| 61+ | 15.60 грн |
| 167+ | 14.69 грн |
| STL120N10F8 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 173.31 грн |
| 9+ | 108.94 грн |
| 24+ | 102.33 грн |
| VL53L3CXV0DH/1 |
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на замовлення 4500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4500+ | 211.53 грн |
| STF20N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Power dissipation: 30W
Case: TO220FP
Mounting: THT
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.19Ω
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Power dissipation: 30W
Case: TO220FP
Mounting: THT
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.19Ω
Polarisation: unipolar
на замовлення 286 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 202.64 грн |
| 5+ | 160.10 грн |
| 8+ | 120.49 грн |
| 22+ | 113.89 грн |
| 50+ | 109.76 грн |
| MJD45H11T4 |
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Виробник: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
на замовлення 527 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 82.66 грн |
| 10+ | 48.44 грн |
| 100+ | 32.68 грн |
| 500+ | 23.93 грн |
| STP110N10F7 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 218.64 грн |
| 25+ | 134.52 грн |
| 50+ | 112.24 грн |
| BTB04-600SL |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; Igt: 10mA; TO220AB; tube
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 10mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: lighting application
Category: Triacs
Description: Triac; 600V; 4A; Igt: 10mA; TO220AB; tube
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 10mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: lighting application
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 96.88 грн |
| 7+ | 63.55 грн |
| 10+ | 56.78 грн |
| 49+ | 19.48 грн |
| 133+ | 18.40 грн |
| STP16N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 19.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 19.5nC
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| STD16N65M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19.5nC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STH315N10F7-2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: H2PAK-2
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: H2PAK-2
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STH315N10F7-6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP200N3LL |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Pulsed drain current: 480A
Power dissipation: 176.5W
Gate charge: 53nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 2.4mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Pulsed drain current: 480A
Power dissipation: 176.5W
Gate charge: 53nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 2.4mΩ
Mounting: THT
на замовлення 153 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 117.32 грн |
| 10+ | 66.85 грн |
| 50+ | 56.12 грн |
| 100+ | 50.34 грн |
| LM833DT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Integrated circuit features: low noise
Input offset voltage: 0.3mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Integrated circuit features: low noise
Input offset voltage: 0.3mV
Kind of package: reel; tape
на замовлення 4186 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.33 грн |
| 19+ | 22.78 грн |
| 21+ | 20.05 грн |
| 25+ | 16.67 грн |
| 50+ | 14.61 грн |
| 100+ | 14.36 грн |
| MC1458IDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...105°C
Kind of package: reel; tape
Quiescent current: 2.3mA
Input offset current: 300nA
Bandwidth: 1MHz
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Input bias current: 0.8µA
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...105°C
Kind of package: reel; tape
Quiescent current: 2.3mA
Input offset current: 300nA
Bandwidth: 1MHz
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Input bias current: 0.8µA
Voltage supply range: ± 2.5...15V DC; 5...30V DC
на замовлення 148 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 40.88 грн |
| 14+ | 31.53 грн |
| 15+ | 28.06 грн |
| 25+ | 23.85 грн |
| 100+ | 18.57 грн |
| MC1458DT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Quiescent current: 2.3mA
Input offset current: 300nA
Bandwidth: 1MHz
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Input bias current: 0.8µA
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Quiescent current: 2.3mA
Input offset current: 300nA
Bandwidth: 1MHz
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Input bias current: 0.8µA
Voltage supply range: ± 2.5...15V DC; 5...30V DC
на замовлення 2442 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.66 грн |
| 15+ | 28.55 грн |
| 25+ | 25.17 грн |
| 100+ | 21.21 грн |
| 250+ | 19.23 грн |
| 500+ | 17.99 грн |
| 1000+ | 17.00 грн |
| LD39150PT-R |
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Виробник: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Manufacturer series: LD39150
Tolerance: 1.5...3%
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Input voltage: 2.5...6V
Output current: 1.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...125°C
Output voltage: 1.22...5V
Kind of package: reel; tape
Case: PPAK
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Manufacturer series: LD39150
Tolerance: 1.5...3%
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Input voltage: 2.5...6V
Output current: 1.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...125°C
Output voltage: 1.22...5V
Kind of package: reel; tape
Case: PPAK
Number of channels: 1
на замовлення 2387 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 104.70 грн |
| 10+ | 70.64 грн |
| 22+ | 44.65 грн |
| 59+ | 42.25 грн |
| LD39150PU-R |
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Виробник: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Manufacturer series: LD39150
Tolerance: 1.5...3%
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Input voltage: 2.5...6V
Output current: 1.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...125°C
Output voltage: 1.22...5V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Manufacturer series: LD39150
Tolerance: 1.5...3%
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Input voltage: 2.5...6V
Output current: 1.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...125°C
Output voltage: 1.22...5V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
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| STF4N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 62 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 119.09 грн |
| 10+ | 61.07 грн |
| 50+ | 52.82 грн |
| STP4N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
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| STL4N80K5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STD4N80K5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STU4N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
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| STP14N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 22nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 22nC
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| STM32L052K8U6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of architecture: Cortex M0+
Clock frequency: 32MHz
Kind of core: 32-bit
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Number of 12bit D/A converters: 1
Kind of package: in-tray
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Case: UFQFPN32
Interface: I2C; SPI x3; USART x2; USB
Family: STM32L0
Mounting: SMD
Supply voltage: 1.8...3.6V DC
Number of inputs/outputs: 27
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of architecture: Cortex M0+
Clock frequency: 32MHz
Kind of core: 32-bit
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Number of 12bit D/A converters: 1
Kind of package: in-tray
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Case: UFQFPN32
Interface: I2C; SPI x3; USART x2; USB
Family: STM32L0
Mounting: SMD
Supply voltage: 1.8...3.6V DC
Number of inputs/outputs: 27
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
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| STM8S207K8T6C |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Interface: I2C; IrDA; SPI; UART
Type of integrated circuit: STM8 microcontroller
Integrated circuit features: Beeper; IWDG; WWDG
Clock frequency: 24MHz
Kind of core: 8-bit
Memory: 1kB EEPROM; 6kB RAM; 64kB FLASH
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 16bit timers: 3
Case: LQFP32
Number of 10bit A/D converters: 7
Family: STM8S
Mounting: SMD
Supply voltage: 3...5.5V DC
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Interface: I2C; IrDA; SPI; UART
Type of integrated circuit: STM8 microcontroller
Integrated circuit features: Beeper; IWDG; WWDG
Clock frequency: 24MHz
Kind of core: 8-bit
Memory: 1kB EEPROM; 6kB RAM; 64kB FLASH
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 16bit timers: 3
Case: LQFP32
Number of 10bit A/D converters: 7
Family: STM8S
Mounting: SMD
Supply voltage: 3...5.5V DC
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| ACS120-7SB-TR |
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Виробник: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: AC switch; 700V; Ifmax: 2A; Igt: 10mA; DPAK; SMD; ASD™
Type of thyristor: AC switch
Max. off-state voltage: 700V
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Technology: ASD™
Features of semiconductor devices: internally triggered
Number of switches: 1
Category: Thyristors - others
Description: Thyristor: AC switch; 700V; Ifmax: 2A; Igt: 10mA; DPAK; SMD; ASD™
Type of thyristor: AC switch
Max. off-state voltage: 700V
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Technology: ASD™
Features of semiconductor devices: internally triggered
Number of switches: 1
на замовлення 2301 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 119.09 грн |
| 5+ | 92.10 грн |
| 10+ | 80.63 грн |
| 22+ | 42.91 грн |
| 61+ | 40.52 грн |
| 500+ | 39.04 грн |
| M24C08-RMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 2296 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.11 грн |
| 32+ | 13.12 грн |
| 100+ | 12.05 грн |
| 131+ | 7.26 грн |
| 359+ | 6.85 грн |
| M24C08-RDW6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
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| M24C08-FMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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| M24C08-RMC6TG |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
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| M24C08-FDW6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
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| M24C08-FMC6TG |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
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| STPS30L60CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. load current: 30A
Max. forward impulse current: 230A
Leakage current: 130mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. load current: 30A
Max. forward impulse current: 230A
Leakage current: 130mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
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| BTA10-600CRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; Igt: 25mA; TO220ABIns; tube
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 10A
Gate current: 25mA
Case: TO220ABIns
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 10A; Igt: 25mA; TO220ABIns; tube
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 10A
Gate current: 25mA
Case: TO220ABIns
Mounting: THT
Kind of package: tube
на замовлення 111 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 126.20 грн |
| 10+ | 56.28 грн |
| 29+ | 33.01 грн |
| 79+ | 31.28 грн |
| BTA10-800BWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 10A; Igt: 50mA; TO220ABIns; tube; Snubberless™
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 10A
Gate current: 50mA
Case: TO220ABIns
Mounting: THT
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 800V; 10A; Igt: 50mA; TO220ABIns; tube; Snubberless™
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 10A
Gate current: 50mA
Case: TO220ABIns
Mounting: THT
Kind of package: tube
Technology: Snubberless™
на замовлення 118 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 95.99 грн |
| 10+ | 57.03 грн |
| 26+ | 37.72 грн |
| 69+ | 35.65 грн |
| 1.5KE56A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 56V; 19.5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 19.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 56V; 19.5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 19.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
на замовлення 714 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.44 грн |
| 30+ | 36.89 грн |
| 100+ | 32.02 грн |
| 250+ | 27.40 грн |
| 300+ | 26.49 грн |
| 500+ | 24.10 грн |
| 600+ | 23.60 грн |
| T1635H-6T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; Igt: 35mA; TO220AB; tube; Ifsm: 168A
Mounting: THT
Max. forward impulse current: 0.168kA
Gate current: 35mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.6kV
Max. load current: 16A
Kind of package: tube
Case: TO220AB
Typ of triac: standard
Category: Triacs
Description: Triac; 600V; 16A; Igt: 35mA; TO220AB; tube; Ifsm: 168A
Mounting: THT
Max. forward impulse current: 0.168kA
Gate current: 35mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.6kV
Max. load current: 16A
Kind of package: tube
Case: TO220AB
Typ of triac: standard
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
| STB18N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 110W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 110W
Case: D2PAK; TO263
On-state resistance: 255mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 110W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 110W
Case: D2PAK; TO263
On-state resistance: 255mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21.5nC
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Мінімальне замовлення: 1000 шт
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| X-NUCLEO-IHM14A1 |
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Виробник: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: STSPIN820; 7÷45VDC
Components: STSPIN820
Interface: GPIO
Connection: pin strips; screw terminal
Associated circuits: STM32
development kits accessories features: stepper motor driver
Type of accessories for development kits: expansion board
Supply voltage: 7...45V DC
Category: Add-on boards
Description: Expansion board; Comp: STSPIN820; 7÷45VDC
Components: STSPIN820
Interface: GPIO
Connection: pin strips; screw terminal
Associated circuits: STM32
development kits accessories features: stepper motor driver
Type of accessories for development kits: expansion board
Supply voltage: 7...45V DC
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1599.78 грн |
| STGW80H65DFB |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 264 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 414.16 грн |
| 5+ | 232.73 грн |
| 12+ | 220.35 грн |
| 60+ | 211.27 грн |
| STP20N90K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
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| L9613B013TR |
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Виробник: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.8...18V DC
Interface: Bus
Mounting: SMD
Case: SO8
Operating temperature: -40...150°C
Kind of package: reel; tape
ISO standard: ISO 9141
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.8...18V DC
Interface: Bus
Mounting: SMD
Case: SO8
Operating temperature: -40...150°C
Kind of package: reel; tape
ISO standard: ISO 9141
на замовлення 1341 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 142.20 грн |
| 10+ | 97.38 грн |
| 25+ | 89.96 грн |
| 50+ | 85.83 грн |
| 100+ | 83.35 грн |
| 250+ | 82.53 грн |
| L9613B |
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Виробник: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; tube
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.8...18V DC
Interface: Bus
Mounting: SMD
Case: SO8
Operating temperature: -40...150°C
Kind of package: tube
ISO standard: ISO 9141
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; tube
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.8...18V DC
Interface: Bus
Mounting: SMD
Case: SO8
Operating temperature: -40...150°C
Kind of package: tube
ISO standard: ISO 9141
на замовлення 495 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 202.64 грн |
| 10+ | 126.27 грн |
| 25+ | 114.71 грн |
| 50+ | 106.46 грн |
| 100+ | 98.21 грн |
| 1.5KE36CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
на замовлення 881 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.75 грн |
| 25+ | 39.61 грн |
| 50+ | 36.06 грн |
| 56+ | 17.00 грн |
| 154+ | 16.09 грн |
| STM32L051C8T6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP48; 1.65÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Number of inputs/outputs: 37
Case: LQFP48
Supply voltage: 1.65...3.6V DC
Interface: I2C x2; I2S; SPI x4; USART x2
Kind of architecture: Cortex M0+
Memory: 8kB SRAM; 64kB FLASH
Family: STM32L0
Kind of core: 32-bit
Mounting: SMD
Operating temperature: -40...85°C
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP48; 1.65÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Number of inputs/outputs: 37
Case: LQFP48
Supply voltage: 1.65...3.6V DC
Interface: I2C x2; I2S; SPI x4; USART x2
Kind of architecture: Cortex M0+
Memory: 8kB SRAM; 64kB FLASH
Family: STM32L0
Kind of core: 32-bit
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 183.09 грн |
| 5+ | 162.58 грн |
| 16+ | 160.93 грн |
| 25+ | 154.33 грн |
| STM32L051K8T6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.65÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Number of inputs/outputs: 27
Case: LQFP32
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI; USART
Kind of architecture: Cortex M0+
Memory: 8kB SRAM; 64kB FLASH
Family: STM32L0
Kind of core: 32-bit
Number of 12bit A/D converters: 10
Mounting: SMD
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.65÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Number of inputs/outputs: 27
Case: LQFP32
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI; USART
Kind of architecture: Cortex M0+
Memory: 8kB SRAM; 64kB FLASH
Family: STM32L0
Kind of core: 32-bit
Number of 12bit A/D converters: 10
Mounting: SMD
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 239.08 грн |
| STM32L031F6P6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; TSSOP20; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Number of inputs/outputs: 15
Case: TSSOP20
Supply voltage: 1.8...3.6V DC
Interface: I2C; IrDA; LIN; SPI; USART
Kind of architecture: Cortex M0+
Memory: 8kB SRAM; 32kB FLASH
Family: STM32L0
Kind of core: 32-bit
Number of 12bit A/D converters: 10
Mounting: SMD
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; TSSOP20; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Number of inputs/outputs: 15
Case: TSSOP20
Supply voltage: 1.8...3.6V DC
Interface: I2C; IrDA; LIN; SPI; USART
Kind of architecture: Cortex M0+
Memory: 8kB SRAM; 32kB FLASH
Family: STM32L0
Kind of core: 32-bit
Number of 12bit A/D converters: 10
Mounting: SMD
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
на замовлення 69 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 168.87 грн |
| 5+ | 145.25 грн |
| STM32L011F4P6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; TSSOP20; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Number of inputs/outputs: 16
Case: TSSOP20
Supply voltage: 1.8...3.6V DC
Interface: I2C; IrDA; SPI; USART
Kind of architecture: Cortex M0+
Memory: 2kB SRAM; 16kB FLASH
Family: STM32L0
Kind of core: 32-bit
Number of 12bit A/D converters: 9
Mounting: SMD
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; TSSOP20; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Number of inputs/outputs: 16
Case: TSSOP20
Supply voltage: 1.8...3.6V DC
Interface: I2C; IrDA; SPI; USART
Kind of architecture: Cortex M0+
Memory: 2kB SRAM; 16kB FLASH
Family: STM32L0
Kind of core: 32-bit
Number of 12bit A/D converters: 9
Mounting: SMD
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
на замовлення 91 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 131.54 грн |
| STM32L051K6T6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.65÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Number of inputs/outputs: 27
Case: LQFP32
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI; USART
Kind of architecture: Cortex M0+
Memory: 8kB SRAM; 32kB FLASH
Family: STM32L0
Kind of core: 32-bit
Number of 12bit A/D converters: 10
Mounting: SMD
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.65÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Number of inputs/outputs: 27
Case: LQFP32
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI; USART
Kind of architecture: Cortex M0+
Memory: 8kB SRAM; 32kB FLASH
Family: STM32L0
Kind of core: 32-bit
Number of 12bit A/D converters: 10
Mounting: SMD
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
на замовлення 113 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 160.87 грн |
| 5+ | 141.95 грн |
| 18+ | 141.12 грн |
| 25+ | 135.35 грн |



































