Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13584) > Сторінка 105 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SSM3K116TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 2.2A UFMInput Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: UFM Vgs(th) (Max) @ Id: 1.1V @ 100µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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SSM3K16FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 100MA USMDrive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Supplier Device Package: USM Vgs(th) (Max) @ Id: 1.1V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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SSM3J15FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA USMInput Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Supplier Device Package: USM Vgs(th) (Max) @ Id: 1.7V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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SSM3J15FV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA VESMInput Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Part Status: Active Supplier Device Package: VESM Vgs(th) (Max) @ Id: 1.7V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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TCR2EF20,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2V 200MA SMVProtection Features: Over Current Voltage Dropout (Max): 0.31V @ 150mA PSRR: 73dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2V Supplier Device Package: SMV Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 60 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TCR2DG15,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.5V 200MA 4WCSP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TC7PZ07FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V US6Supplier Device Package: US6 Current - Output High, Low: -, 32mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: Open Drain Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TC7PZ17FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 5.5V US6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US6 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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74VHCV245FT(BJ) | Toshiba Semiconductor and Storage |
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TC7USB3212WBG(ELAH | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX 4 X 1:2 20WCSP Supplier Device Package: 2-WCSP (2x1.6) Voltage Supply Source: Single Supply Independent Circuits: 4 Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 85°C Type: Multiplexer/Demultiplexer Circuit: 4 x 1:2 Mounting Type: Surface Mount Package / Case: 20-UFBGA, WLCSP Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF3D36FU,LF | Toshiba Semiconductor and Storage |
Description: ESD PROTECTION DIODE (BI-DIRECTI |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SSM3K72CFS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 170MA SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 49875 шт: термін постачання 21-31 дні (днів) |
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SSM3K72KCT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 400MA CST3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: CST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
на замовлення 273623 шт: термін постачання 21-31 дні (днів) |
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SSM3K7002KF,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 400MA S-MINIInput Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: S-Mini Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 270mW (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 71465 шт: термін постачання 21-31 дні (днів) |
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SSM3K341R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 6A SOT-23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V |
на замовлення 138438 шт: термін постачання 21-31 дні (днів) |
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TCK107AF,LF | Toshiba Semiconductor and Storage |
Description: IC PWR LOAD SWITCH LO ON-RES SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Rds On (Typ): 63mOhm Voltage - Load: 1.1V ~ 5.5V Current - Output (Max): 1A Supplier Device Package: SMV |
на замовлення 147715 шт: термін постачання 21-31 дні (днів) |
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| SSM6N61NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SSM6J511NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 14A 6UDFNBPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V |
на замовлення 32628 шт: термін постачання 21-31 дні (днів) |
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SSM3K116TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 2.2A UFMInput Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: UFM Vgs(th) (Max) @ Id: 1.1V @ 100µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 39100 шт: термін постачання 21-31 дні (днів) |
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SSM3K16FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 100MA USMPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: USM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V |
на замовлення 29064 шт: термін постачання 21-31 дні (днів) |
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SSM3J15FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA USMPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: USM Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V |
на замовлення 22168 шт: термін постачання 21-31 дні (днів) |
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SSM3J15FV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: VESM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V |
на замовлення 22930 шт: термін постачання 21-31 дні (днів) |
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TCR2EF20,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2V 200MA SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 2V Control Features: Enable Part Status: Active PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.31V @ 150mA Protection Features: Over Current |
на замовлення 12856 шт: термін постачання 21-31 дні (днів) |
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TCR2DG15,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.5V 200MA 4WCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7PZ07FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: US6 |
на замовлення 6746 шт: термін постачання 21-31 дні (днів) |
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TC7PZ17FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 5.5V US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US6 |
на замовлення 7669 шт: термін постачання 21-31 дні (днів) |
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74VHCV245FT(BJ) | Toshiba Semiconductor and Storage |
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF3D36FU,LF | Toshiba Semiconductor and Storage |
Description: ESD PROTECTION DIODE (BI-DIRECTI |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
| SSM6N61NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74VHCV245FT(BJ) | Toshiba Semiconductor and Storage |
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TBD62064AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR DRIVER N-CHAN 1:1 16HSOPPackaging: Tape & Reel (TR) Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Rds On (Typ): 430mOhm Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.25A Ratio - Input:Output: 1:1 Supplier Device Package: 16-HSOP Part Status: Active |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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1SS389,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA ESCPackaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
на замовлення 71100 шт: термін постачання 21-31 дні (днів) |
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1SS389,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA ESCPackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
на замовлення 71529 шт: термін постачання 21-31 дні (днів) |
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TBD62064AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR DRIVER N-CHAN 1:1 16HSOPPackaging: Cut Tape (CT) Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Rds On (Typ): 430mOhm Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.25A Ratio - Input:Output: 1:1 Supplier Device Package: 16-HSOP Part Status: Active |
на замовлення 27074 шт: термін постачання 21-31 дні (днів) |
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TLP184(GB,SE | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH TRANS 6-SOPPackaging: Tube Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 149 шт: термін постачання 21-31 дні (днів) |
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SSM6L16FETE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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SSM6L16FETE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6 |
на замовлення 79 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLP2703(E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active Turn On / Turn Off Time (Typ): 330ns, 2.5µs Voltage - Output (Max): 18V Supplier Device Package: 6-SO Current Transfer Ratio (Max): 8000% @ 500µA Current Transfer Ratio (Min): 900% @ 500µA Voltage - Isolation: 5000Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.47V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Darlington Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP2703(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOPackage / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) Turn On / Turn Off Time (Typ): 330ns, 2.5µs Voltage - Output (Max): 18V Supplier Device Package: 6-SO Current Transfer Ratio (Max): 8000% @ 500µA Current Transfer Ratio (Min): 900% @ 500µA Voltage - Isolation: 5000Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.47V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Darlington Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP2703(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active Turn On / Turn Off Time (Typ): 330ns, 2.5µs Voltage - Output (Max): 18V Supplier Device Package: 6-SO Current Transfer Ratio (Max): 8000% @ 500µA Current Transfer Ratio (Min): 900% @ 500µA Voltage - Isolation: 5000Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.47V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Darlington Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
на замовлення 3195 шт: термін постачання 21-31 дні (днів) |
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TPHR6503PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 150A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V |
на замовлення 70000 шт: термін постачання 21-31 дні (днів) |
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TPN3R704PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 80A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V Power Dissipation (Max): 630mW (Ta), 86W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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TPN2R304PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 80A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V Power Dissipation (Max): 630mW (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 300µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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TPH3R704PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 92A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 46A, 10V Power Dissipation (Max): 960mW (Ta), 81W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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TPHR6503PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 150A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V |
на замовлення 72189 шт: термін постачання 21-31 дні (днів) |
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TPN3R704PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 80A 8TSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V Power Dissipation (Max): 630mW (Ta), 86W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TPN2R304PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 80A 8TSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V Power Dissipation (Max): 630mW (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 300µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V |
на замовлення 62135 шт: термін постачання 21-31 дні (днів) |
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TPH3R704PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 92A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 46A, 10V Power Dissipation (Max): 960mW (Ta), 81W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V |
на замовлення 31515 шт: термін постачання 21-31 дні (днів) |
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| TC35662IXBG(EL) | Toshiba Semiconductor and Storage | Description: IC RF TXRX+MCU BLUETOOTH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TC35662IXBG(EL) | Toshiba Semiconductor and Storage | Description: IC RF TXRX+MCU BLUETOOTH |
на замовлення 999 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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SSM3K361R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 3.5A SOT-23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TBAS16,LM | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 80V 215MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 215mA Supplier Device Package: SOT-23-3 Voltage - DC Reverse (Vr) (Max): 80 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TBAT54S,LM | Toshiba Semiconductor and Storage |
Description: DIODE ARR SCHOTT 30V 200MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 273000 шт: термін постачання 21-31 дні (днів) |
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TBAV70,LM | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 215MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 215mA Supplier Device Package: SOT-23-3 Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V |
на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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TBAW56,LM | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 215MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 215mA Supplier Device Package: SOT-23-3 Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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74HC14D | Toshiba Semiconductor and Storage |
Description: IC INV 6-CIR 1-IN 14-SOICFeatures: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 1 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.3V ~ 1.5V Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74HC245D | Toshiba Semiconductor and Storage |
Description: IC TXRX 2V/6V 20-SOICPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC Part Status: Active |
на замовлення 141 шт: термін постачання 21-31 дні (днів) |
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74HC32D | Toshiba Semiconductor and Storage |
Description: IC OR 4-CIR 2-IN 14-SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
на замовлення 9710 шт: термін постачання 21-31 дні (днів) |
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74HC4051D | Toshiba Semiconductor and Storage |
Description: IC MUX 8:1 130OHM 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 130Ohm Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2V ~ 6V Crosstalk: -50dB @ 1MHz Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 4Ohm Switch Time (Ton, Toff) (Max): 34ns, 32ns Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 1 |
на замовлення 29791 шт: термін постачання 21-31 дні (днів) |
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74HC4052D | Toshiba Semiconductor and Storage |
Description: IC SWITCH SP4T X 2 130OHM 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 130Ohm Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2V ~ 6V Crosstalk: -50dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 4Ohm Switch Time (Ton, Toff) (Max): 34ns, 32ns Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 2 |
на замовлення 12229 шт: термін постачання 21-31 дні (днів) |
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| SSM3K116TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.2A UFM
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 2.2A UFM
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.44 грн |
| 6000+ | 9.64 грн |
| 9000+ | 8.67 грн |
| 30000+ | 8.02 грн |
| SSM3K16FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Description: MOSFET N-CH 20V 100MA USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.52 грн |
| 6000+ | 3.15 грн |
| 9000+ | 2.61 грн |
| SSM3J15FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA USM
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 100MA USM
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.28 грн |
| 6000+ | 2.82 грн |
| 9000+ | 2.65 грн |
| 15000+ | 2.31 грн |
| 21000+ | 2.20 грн |
| SSM3J15FV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 2.68 грн |
| TCR2EF20,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 200MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.31V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 2V 200MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.31V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.57 грн |
| 6000+ | 3.32 грн |
| 9000+ | 3.26 грн |
| TCR2DG15,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.5V 200MA 4WCSP
Description: IC REG LINEAR 1.5V 200MA 4WCSP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TC7PZ07FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V US6
Supplier Device Package: US6
Current - Output High, Low: -, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: IC BUFFER NON-INVERT 5.5V US6
Supplier Device Package: US6
Current - Output High, Low: -, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.56 грн |
| TC7PZ17FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 5.5V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
Description: IC BUFFER NON-INVERTING 5.5V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.98 грн |
| 6000+ | 2.77 грн |
| 74VHCV245FT(BJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TC7USB3212WBG(ELAH |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4 X 1:2 20WCSP
Supplier Device Package: 2-WCSP (2x1.6)
Voltage Supply Source: Single Supply
Independent Circuits: 4
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 4 x 1:2
Mounting Type: Surface Mount
Package / Case: 20-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC MUX/DEMUX 4 X 1:2 20WCSP
Supplier Device Package: 2-WCSP (2x1.6)
Voltage Supply Source: Single Supply
Independent Circuits: 4
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 4 x 1:2
Mounting Type: Surface Mount
Package / Case: 20-UFBGA, WLCSP
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| DF3D36FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: ESD PROTECTION DIODE (BI-DIRECTI
Description: ESD PROTECTION DIODE (BI-DIRECTI
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| SSM3K72CFS,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 170MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 170MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 49875 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.89 грн |
| 43+ | 7.18 грн |
| 100+ | 4.41 грн |
| 500+ | 3.01 грн |
| 1000+ | 2.64 грн |
| SSM3K72KCT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 400MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 60V 400MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 273623 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.86 грн |
| 33+ | 9.32 грн |
| 50+ | 6.67 грн |
| 100+ | 5.44 грн |
| 500+ | 3.97 грн |
| SSM3K7002KF,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 400MA S-MINI
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: S-Mini
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 270mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 400MA S-MINI
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: S-Mini
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 270mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 71465 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.82 грн |
| 26+ | 11.99 грн |
| 50+ | 8.55 грн |
| 100+ | 6.98 грн |
| 500+ | 5.13 грн |
| SSM3K341R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Description: MOSFET N-CH 60V 6A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
на замовлення 138438 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.92 грн |
| 10+ | 32.22 грн |
| 50+ | 23.58 грн |
| 100+ | 19.48 грн |
| 500+ | 14.83 грн |
| TCK107AF,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR LOAD SWITCH LO ON-RES SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Rds On (Typ): 63mOhm
Voltage - Load: 1.1V ~ 5.5V
Current - Output (Max): 1A
Supplier Device Package: SMV
Description: IC PWR LOAD SWITCH LO ON-RES SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Rds On (Typ): 63mOhm
Voltage - Load: 1.1V ~ 5.5V
Current - Output (Max): 1A
Supplier Device Package: SMV
на замовлення 147715 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.79 грн |
| 20+ | 15.58 грн |
| 25+ | 13.81 грн |
| 100+ | 11.15 грн |
| 250+ | 10.29 грн |
| 500+ | 9.77 грн |
| 1000+ | 9.19 грн |
| SSM6N61NU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A
Description: MOSFET 2P-CH 20V 4A
товару немає в наявності
В кошику
од. на суму грн.
| SSM6J511NU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
на замовлення 32628 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.75 грн |
| 11+ | 30.31 грн |
| 50+ | 22.11 грн |
| 100+ | 18.24 грн |
| 500+ | 13.83 грн |
| SSM3K116TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.2A UFM
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 2.2A UFM
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 39100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.85 грн |
| 11+ | 28.94 грн |
| 100+ | 17.35 грн |
| 500+ | 15.07 грн |
| 1000+ | 10.25 грн |
| SSM3K16FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Description: MOSFET N-CH 20V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
на замовлення 29064 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.62 грн |
| 23+ | 13.82 грн |
| 100+ | 6.76 грн |
| 500+ | 5.29 грн |
| 1000+ | 3.67 грн |
| SSM3J15FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Description: MOSFET P-CH 30V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
на замовлення 22168 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.86 грн |
| 32+ | 9.54 грн |
| 100+ | 5.93 грн |
| 500+ | 4.07 грн |
| 1000+ | 3.58 грн |
| SSM3J15FV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Description: MOSFET P-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
на замовлення 22930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.86 грн |
| 34+ | 9.16 грн |
| 50+ | 6.54 грн |
| 100+ | 5.33 грн |
| 500+ | 3.90 грн |
| TCR2EF20,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
на замовлення 12856 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.52 грн |
| 50+ | 6.11 грн |
| 58+ | 5.34 грн |
| 100+ | 4.24 грн |
| 250+ | 3.87 грн |
| 500+ | 3.64 грн |
| 1000+ | 3.40 грн |
| TCR2DG15,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.5V 200MA 4WCSP
Description: IC REG LINEAR 1.5V 200MA 4WCSP
товару немає в наявності
В кошику
од. на суму грн.
| TC7PZ07FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: US6
Description: IC BUFFER NON-INVERT 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: US6
на замовлення 6746 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.58 грн |
| 23+ | 13.74 грн |
| 28+ | 11.18 грн |
| 100+ | 7.82 грн |
| 250+ | 6.50 грн |
| 500+ | 5.68 грн |
| 1000+ | 4.91 грн |
| TC7PZ17FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
Description: IC BUFFER NON-INVERTING 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
на замовлення 7669 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.93 грн |
| 58+ | 5.34 грн |
| 66+ | 4.64 грн |
| 100+ | 3.66 грн |
| 250+ | 3.33 грн |
| 500+ | 3.14 грн |
| 1000+ | 2.93 грн |
| 74VHCV245FT(BJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| DF3D36FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: ESD PROTECTION DIODE (BI-DIRECTI
Description: ESD PROTECTION DIODE (BI-DIRECTI
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| SSM6N61NU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A
Description: MOSFET 2P-CH 20V 4A
товару немає в наявності
В кошику
од. на суму грн.
| 74VHCV245FT(BJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| TBD62064AFG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 99.09 грн |
| 3000+ | 93.23 грн |
| 4500+ | 92.13 грн |
| 1SS389,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
на замовлення 71100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 2.41 грн |
| 24000+ | 1.98 грн |
| 1SS389,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
на замовлення 71529 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.27 грн |
| 37+ | 8.40 грн |
| 52+ | 5.96 грн |
| 100+ | 4.84 грн |
| 500+ | 3.53 грн |
| TBD62064AFG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
на замовлення 27074 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 186.34 грн |
| 10+ | 133.55 грн |
| 25+ | 122.11 грн |
| 100+ | 102.78 грн |
| 250+ | 97.14 грн |
| 500+ | 94.91 грн |
| TLP184(GB,SE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 149 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 20.03 грн |
| SSM6L16FETE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| SSM6L16FETE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
| TLP2703(E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| TLP2703(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 39.63 грн |
| 3000+ | 36.35 грн |
| TLP2703(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
на замовлення 3195 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.94 грн |
| 10+ | 65.21 грн |
| 100+ | 48.93 грн |
| 500+ | 39.15 грн |
| TPHR6503PL,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 63.85 грн |
| TPN3R704PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TPN2R304PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 26.53 грн |
| 15000+ | 22.98 грн |
| TPH3R704PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 92A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 46A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
Description: MOSFET N-CH 40V 92A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 46A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 29.14 грн |
| 15000+ | 26.48 грн |
| TPHR6503PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
на замовлення 72189 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.81 грн |
| 10+ | 139.04 грн |
| 50+ | 106.53 грн |
| 100+ | 90.15 грн |
| 500+ | 72.92 грн |
| TPN3R704PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| TPN2R304PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
на замовлення 62135 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.84 грн |
| 10+ | 65.13 грн |
| 50+ | 48.62 грн |
| 100+ | 40.60 грн |
| 500+ | 31.79 грн |
| TPH3R704PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 92A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 46A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
Description: MOSFET N-CH 40V 92A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 46A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
на замовлення 31515 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.22 грн |
| 10+ | 66.66 грн |
| 50+ | 49.74 грн |
| 100+ | 41.53 грн |
| 500+ | 32.49 грн |
| TC35662IXBG(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC RF TXRX+MCU BLUETOOTH
Description: IC RF TXRX+MCU BLUETOOTH
товару немає в наявності
В кошику
од. на суму грн.
| TC35662IXBG(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC RF TXRX+MCU BLUETOOTH
Description: IC RF TXRX+MCU BLUETOOTH
на замовлення 999 шт:
термін постачання 21-31 дні (днів)
| SSM3K361R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Description: MOSFET N-CH 100V 3.5A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.41 грн |
| TBAS16,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23-3
Voltage - DC Reverse (Vr) (Max): 80 V
Description: DIODE STANDARD 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23-3
Voltage - DC Reverse (Vr) (Max): 80 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.69 грн |
| TBAT54S,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 273000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.69 грн |
| 9000+ | 2.17 грн |
| TBAV70,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Description: DIODE ARRAY GP 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.55 грн |
| 9000+ | 2.05 грн |
| TBAW56,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Description: DIODE ARRAY GP 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.75 грн |
| 9000+ | 2.21 грн |
| 74HC14D |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC INV 6-CIR 1-IN 14-SOIC
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Description: IC INV 6-CIR 1-IN 14-SOIC
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
товару немає в наявності
В кошику
од. на суму грн.
| 74HC245D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TXRX 2V/6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC TXRX 2V/6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 141 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.47 грн |
| 13+ | 24.66 грн |
| 25+ | 22.05 грн |
| 100+ | 17.99 грн |
| 74HC32D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OR 4-CIR 2-IN 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC OR 4-CIR 2-IN 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
на замовлення 9710 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.79 грн |
| 20+ | 15.65 грн |
| 25+ | 13.93 грн |
| 100+ | 11.27 грн |
| 250+ | 10.41 грн |
| 500+ | 9.89 грн |
| 1000+ | 9.31 грн |
| 74HC4051D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MUX 8:1 130OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 130Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Switch Time (Ton, Toff) (Max): 34ns, 32ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
Description: IC MUX 8:1 130OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 130Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Switch Time (Ton, Toff) (Max): 34ns, 32ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
на замовлення 29791 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.99 грн |
| 21+ | 15.19 грн |
| 25+ | 13.53 грн |
| 100+ | 10.92 грн |
| 250+ | 10.08 грн |
| 500+ | 9.56 грн |
| 1000+ | 8.99 грн |
| 74HC4052D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SP4T X 2 130OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 130Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Switch Time (Ton, Toff) (Max): 34ns, 32ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 130OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 130Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Switch Time (Ton, Toff) (Max): 34ns, 32ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
на замовлення 12229 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 22.20 грн |
| 21+ | 14.66 грн |
| 25+ | 13.04 грн |
| 100+ | 10.53 грн |
| 250+ | 9.71 грн |
| 500+ | 9.22 грн |
| 1000+ | 8.67 грн |











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