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TK14G65W5,RQ TK14G65W5,RQ Toshiba Semiconductor and Storage TK14G65W5_datasheet_en_20140225.pdf?did=14505&prodName=TK14G65W5 Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
товар відсутній
TK20V60W5,LVQ TK20V60W5,LVQ Toshiba Semiconductor and Storage TK20V60W5_datasheet_en_20160108.pdf?did=28825&prodName=TK20V60W5 Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
на замовлення 4812 шт:
термін постачання 21-31 дні (днів)
2+194.23 грн
10+ 156.81 грн
100+ 126.87 грн
500+ 105.83 грн
1000+ 90.62 грн
Мінімальне замовлення: 2
TK6P65W,RQ TK6P65W,RQ Toshiba Semiconductor and Storage TK6P65W_datasheet_en_20151225.pdf?did=15571&prodName=TK6P65W Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
на замовлення 1246 шт:
термін постачання 21-31 дні (днів)
3+100.34 грн
10+ 86.34 грн
100+ 67.34 грн
500+ 52.2 грн
1000+ 41.21 грн
Мінімальне замовлення: 3
TK7P65W,RQ TK7P65W,RQ Toshiba Semiconductor and Storage docget.jsp?did=15525&prodName=TK7P65W Description: MOSFET N-CH 650V 6.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
на замовлення 1408 шт:
термін постачання 21-31 дні (днів)
3+106.08 грн
10+ 85.03 грн
100+ 67.69 грн
500+ 53.75 грн
1000+ 45.61 грн
Мінімальне замовлення: 3
TK9P65W,RQ TK9P65W,RQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK9P65W Description: MOSFET N-CH 650V 9.3A DPAK
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
TPH2R608NH,L1Q TPH2R608NH,L1Q Toshiba Semiconductor and Storage Description: MOSFET N-CH 75V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
на замовлення 110000 шт:
термін постачання 21-31 дні (днів)
5000+38.24 грн
10000+ 35.12 грн
Мінімальне замовлення: 5000
TPH2900ENH,L1Q TPH2900ENH,L1Q Toshiba Semiconductor and Storage TPH2900ENH_datasheet_en_20191018.pdf?did=14485&prodName=TPH2900ENH Description: MOSFET N-CH 200V 33A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
5000+71.36 грн
Мінімальне замовлення: 5000
TK8P60W5,RVQ TK8P60W5,RVQ Toshiba Semiconductor and Storage TK8P60W5_datasheet_en_20151022.pdf?did=14496&prodName=TK8P60W5 Description: MOSFET N-CH 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
2000+52.02 грн
6000+ 48.24 грн
10000+ 47 грн
Мінімальне замовлення: 2000
TK9P65W,RQ TK9P65W,RQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK9P65W Description: MOSFET N-CH 650V 9.3A DPAK
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
TK14G65W,RQ TK14G65W,RQ Toshiba Semiconductor and Storage TK14G65W_datasheet_en_20140225.pdf?did=14506&prodName=TK14G65W Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+73.18 грн
2000+ 66.95 грн
Мінімальне замовлення: 1000
TK14G65W5,RQ TK14G65W5,RQ Toshiba Semiconductor and Storage TK14G65W5_datasheet_en_20140225.pdf?did=14505&prodName=TK14G65W5 Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
товар відсутній
TK20V60W5,LVQ TK20V60W5,LVQ Toshiba Semiconductor and Storage TK20V60W5_datasheet_en_20160108.pdf?did=28825&prodName=TK20V60W5 Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+94.42 грн
Мінімальне замовлення: 2500
TK6P65W,RQ TK6P65W,RQ Toshiba Semiconductor and Storage TK6P65W_datasheet_en_20151225.pdf?did=15571&prodName=TK6P65W Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
товар відсутній
TK7P65W,RQ TK7P65W,RQ Toshiba Semiconductor and Storage docget.jsp?did=15525&prodName=TK7P65W Description: MOSFET N-CH 650V 6.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
товар відсутній
TK25E60X,S1X TK25E60X,S1X Toshiba Semiconductor and Storage TK25E60X_datasheet_en_20140512.pdf?did=15196&prodName=TK25E60X Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+316.08 грн
10+ 273.18 грн
TK25N60X,S1F TK25N60X,S1F Toshiba Semiconductor and Storage Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
товар відсутній
TK7A60W5,S5VX TK7A60W5,S5VX Toshiba Semiconductor and Storage docget.jsp?did=14493&prodName=TK7A60W5 Description: MOSFET N-CH 600V 7A TO220SIS
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
3+113.24 грн
10+ 97.8 грн
Мінімальне замовлення: 3
TK8A60W5,S5VX TK8A60W5,S5VX Toshiba Semiconductor and Storage TK8A60W5_datasheet_en_20140225.pdf?did=14495&prodName=TK8A60W5 Description: MOSFET N-CH 600V 8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
товар відсутній
TK10A60W5,S5VX TK10A60W5,S5VX Toshiba Semiconductor and Storage TK10A60W5_datasheet_en_20140225.pdf?did=14291&prodName=TK10A60W5 Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 300 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
3+130.45 грн
Мінімальне замовлення: 3
TK20N60W5,S1VF TK20N60W5,S1VF Toshiba Semiconductor and Storage TK20N60W5_datasheet_en_20150115.pdf?did=14961&prodName=TK20N60W5 Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
2+247.27 грн
Мінімальне замовлення: 2
TK25N60X5,S1F TK25N60X5,S1F Toshiba Semiconductor and Storage Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+292.43 грн
30+ 223.05 грн
TK39N60W5,S1VF TK39N60W5,S1VF Toshiba Semiconductor and Storage TK39N60W5_datasheet_en_20140225.pdf?did=14536&prodName=TK39N60W5 Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
на замовлення 3114 шт:
термін постачання 21-31 дні (днів)
1+427.89 грн
30+ 326.6 грн
120+ 279.95 грн
510+ 233.53 грн
1020+ 199.96 грн
2010+ 188.29 грн
TK5Q65W,S1Q TK5Q65W,S1Q Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 5.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
4+91.03 грн
10+ 78.34 грн
Мінімальне замовлення: 4
TK6Q65W,S1Q TK6Q65W,S1Q Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK6Q65W Description: MOSFET N-CH 650V 5.8A IPAK-OS
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
TK17E65W,S1X TK17E65W,S1X Toshiba Semiconductor and Storage docget.jsp?did=14508&prodName=TK17E65W Description: MOSFET N-CH 650V 17.3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
товар відсутній
TK8A65W,S5X TK8A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15580&prodName=TK8A65W Description: MOSFET N-CH 650V 7.8A TO220SIS
товар відсутній
TK17N65W,S1F TK17N65W,S1F Toshiba Semiconductor and Storage TK17N65W_datasheet_en_20140225.pdf?did=14509&prodName=TK17N65W Description: MOSFET N-CH 650V 17.3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
товар відсутній
TK28N65W,S1F TK28N65W,S1F Toshiba Semiconductor and Storage TK28N65W_datasheet_en_20140225.pdf?did=14530&prodName=TK28N65W Description: MOSFET N-CH 650V 27.6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+397.79 грн
30+ 303.34 грн
TK14E65W5,S1X TK14E65W5,S1X Toshiba Semiconductor and Storage TK14E65W5_datasheet_en_20140225.pdf?did=14504&prodName=TK14E65W5 Description: MOSFET N-CH 650V 13.7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
2+216.45 грн
10+ 186.97 грн
Мінімальне замовлення: 2
TK35A65W5,S5X TK35A65W5,S5X Toshiba Semiconductor and Storage docget.jsp?did=14533&prodName=TK35A65W5 Description: MOSFET N-CH 650V 35A TO220SIS
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
TK14N65W5,S1F TK14N65W5,S1F Toshiba Semiconductor and Storage TK14N65W5_datasheet_en_20140225.pdf?did=14526&prodName=TK14N65W5 Description: MOSFET N-CH 650V 13.7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
2+273.79 грн
30+ 209.24 грн
Мінімальне замовлення: 2
TK25A60X,S5X TK25A60X,S5X Toshiba Semiconductor and Storage Description: MOSFET N-CH 600V 25A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
2+255.16 грн
Мінімальне замовлення: 2
TK16E60W5,S1VX TK16E60W5,S1VX Toshiba Semiconductor and Storage TK16E60W5_datasheet_en_20140225.pdf?did=14274&prodName=TK16E60W5 Description: MOSFET N-CH 600V 15.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
товар відсутній
TK25A60X5,S5X TK25A60X5,S5X Toshiba Semiconductor and Storage Description: MOSFET N-CH 600V 25A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+293.14 грн
TK8Q65W,S1Q TK8Q65W,S1Q Toshiba Semiconductor and Storage TK8Q65W_datasheet_en_20140930.pdf?did=15581&prodName=TK8Q65W Description: MOSFET N-CH 650V 7.8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
3+123.28 грн
Мінімальне замовлення: 3
TK5A65W,S5X TK5A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15564&prodName=TK5A65W Description: MOSFET N-CH 650V 5.2A TO-220SIS
на замовлення 98 шт:
термін постачання 21-31 дні (днів)
TK6A65W,S5X TK6A65W,S5X Toshiba Semiconductor and Storage TK6A65W_datasheet_en_20151225.pdf?did=15568&prodName=TK6A65W Description: MOSFET N-CH 650V 5.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
товар відсутній
TK7A65W,S5X TK7A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15574&prodName=TK7A65W Description: MOSFET N-CH 650V 6.8A TO220SIS
товар відсутній
TK9A65W,S5X TK9A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15583&prodName=TK9A65W Description: MOSFET N-CH 650V 9.3A TO-220SIS
товар відсутній
TK28A65W,S5X TK28A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15562&prodName=TK28A65W Description: MOSFET N-CH 650V 27.6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
1+314.65 грн
10+ 254.54 грн
TBD62003APG TBD62003APG Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
на замовлення 1597 шт:
термін постачання 21-31 дні (днів)
4+73.82 грн
10+ 63.57 грн
25+ 60.35 грн
100+ 46.53 грн
250+ 43.49 грн
500+ 38.43 грн
1000+ 29.84 грн
Мінімальне замовлення: 4
TBD62004APG TBD62004APG Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
на замовлення 1022 шт:
термін постачання 21-31 дні (днів)
4+74.54 грн
10+ 64.19 грн
25+ 60.93 грн
100+ 46.97 грн
250+ 43.9 грн
500+ 38.79 грн
1000+ 30.13 грн
Мінімальне замовлення: 4
TBD62083APG TBD62083APG Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
3+96.76 грн
20+ 83.17 грн
40+ 78.94 грн
100+ 60.86 грн
260+ 56.89 грн
500+ 50.27 грн
Мінімальне замовлення: 3
TBD62084APG TBD62084APG Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
на замовлення 373 шт:
термін постачання 21-31 дні (днів)
3+96.76 грн
10+ 83.17 грн
25+ 78.96 грн
100+ 60.86 грн
250+ 56.89 грн
Мінімальне замовлення: 3
TBD62783APG TBD62783APG Toshiba Semiconductor and Storage TBD62783AFG_datasheet_en_20160511.pdf?did=30523&prodName=TBD62783AFG Description: IC PWR SWITCH P-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
на замовлення 14910 шт:
термін постачання 21-31 дні (днів)
3+108.23 грн
20+ 92.66 грн
40+ 87.95 грн
100+ 67.8 грн
260+ 63.38 грн
500+ 56.01 грн
1000+ 43.49 грн
2500+ 40.59 грн
5000+ 38.56 грн
Мінімальне замовлення: 3
TB6562ANG,8 TB6562ANG,8 Toshiba Semiconductor and Storage TB6562AFG_datasheet_en_20120928.pdf?did=2725&prodName=TB6562AFG Description: IC MTR DRV BIPOLAR 10-34V 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 10V ~ 34V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 34V
Supplier Device Package: 24-SDIP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4
товар відсутній
TBD62003AFG,EL TBD62003AFG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
2000+24.36 грн
6000+ 22.29 грн
10000+ 21.45 грн
Мінімальне замовлення: 2000
TBD62003AFNG,EL TBD62003AFNG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)
2000+30.13 грн
6000+ 27.56 грн
10000+ 26.53 грн
Мінімальне замовлення: 2000
TBD62003AFWG,EL TBD62003AFWG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2000+20.65 грн
6000+ 18.51 грн
Мінімальне замовлення: 2000
TBD62004AFG,EL TBD62004AFG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2000+24.61 грн
6000+ 22.52 грн
10000+ 21.67 грн
Мінімальне замовлення: 2000
TBD62004AFNG,EL TBD62004AFNG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
товар відсутній
TBD62004AFWG,EL TBD62004AFWG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+20.65 грн
Мінімальне замовлення: 2000
TBD62083AFG,EL TBD62083AFG,EL Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
1000+40.11 грн
2000+ 36.05 грн
5000+ 34.24 грн
10000+ 30.93 грн
Мінімальне замовлення: 1000
TBD62083AFNG,EL TBD62083AFNG,EL Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
2000+38.65 грн
6000+ 35.36 грн
10000+ 34.03 грн
Мінімальне замовлення: 2000
TBD62083AFWG,EL TBD62083AFWG,EL Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
на замовлення 18071 шт:
термін постачання 21-31 дні (днів)
1000+35.09 грн
2000+ 31.54 грн
5000+ 29.96 грн
10000+ 27.06 грн
Мінімальне замовлення: 1000
TBD62084AFG,EL TBD62084AFG,EL Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
1000+40.11 грн
2000+ 36.05 грн
5000+ 34.24 грн
Мінімальне замовлення: 1000
TBD62084AFNG,EL TBD62084AFNG,EL Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+38.65 грн
Мінімальне замовлення: 2000
TBD62084AFWG,EL TBD62084AFWG,EL Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
1000+35.09 грн
2000+ 31.54 грн
5000+ 29.96 грн
Мінімальне замовлення: 1000
TBD62502AFG,EL TBD62502AFG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TBD62502AFG Description: IC LOAD SWITCH 7CH 0.3A 16SOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
TBD62502AFNG,EL TBD62502AFNG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TBD62502AFG Description: IC LOAD SWITCH 7CH 0.3A 16SSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
TK14G65W5,RQ TK14G65W5_datasheet_en_20140225.pdf?did=14505&prodName=TK14G65W5
TK14G65W5,RQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
товар відсутній
TK20V60W5,LVQ TK20V60W5_datasheet_en_20160108.pdf?did=28825&prodName=TK20V60W5
TK20V60W5,LVQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
на замовлення 4812 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+194.23 грн
10+ 156.81 грн
100+ 126.87 грн
500+ 105.83 грн
1000+ 90.62 грн
Мінімальне замовлення: 2
TK6P65W,RQ TK6P65W_datasheet_en_20151225.pdf?did=15571&prodName=TK6P65W
TK6P65W,RQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
на замовлення 1246 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+100.34 грн
10+ 86.34 грн
100+ 67.34 грн
500+ 52.2 грн
1000+ 41.21 грн
Мінімальне замовлення: 3
TK7P65W,RQ docget.jsp?did=15525&prodName=TK7P65W
TK7P65W,RQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
на замовлення 1408 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+106.08 грн
10+ 85.03 грн
100+ 67.69 грн
500+ 53.75 грн
1000+ 45.61 грн
Мінімальне замовлення: 3
TK9P65W,RQ docget.jsp?type=datasheet&lang=en&pid=TK9P65W
TK9P65W,RQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 9.3A DPAK
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
TPH2R608NH,L1Q
TPH2R608NH,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
на замовлення 110000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+38.24 грн
10000+ 35.12 грн
Мінімальне замовлення: 5000
TPH2900ENH,L1Q TPH2900ENH_datasheet_en_20191018.pdf?did=14485&prodName=TPH2900ENH
TPH2900ENH,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 33A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+71.36 грн
Мінімальне замовлення: 5000
TK8P60W5,RVQ TK8P60W5_datasheet_en_20151022.pdf?did=14496&prodName=TK8P60W5
TK8P60W5,RVQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+52.02 грн
6000+ 48.24 грн
10000+ 47 грн
Мінімальне замовлення: 2000
TK9P65W,RQ docget.jsp?type=datasheet&lang=en&pid=TK9P65W
TK9P65W,RQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 9.3A DPAK
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
TK14G65W,RQ TK14G65W_datasheet_en_20140225.pdf?did=14506&prodName=TK14G65W
TK14G65W,RQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+73.18 грн
2000+ 66.95 грн
Мінімальне замовлення: 1000
TK14G65W5,RQ TK14G65W5_datasheet_en_20140225.pdf?did=14505&prodName=TK14G65W5
TK14G65W5,RQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
товар відсутній
TK20V60W5,LVQ TK20V60W5_datasheet_en_20160108.pdf?did=28825&prodName=TK20V60W5
TK20V60W5,LVQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+94.42 грн
Мінімальне замовлення: 2500
TK6P65W,RQ TK6P65W_datasheet_en_20151225.pdf?did=15571&prodName=TK6P65W
TK6P65W,RQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
товар відсутній
TK7P65W,RQ docget.jsp?did=15525&prodName=TK7P65W
TK7P65W,RQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
товар відсутній
TK25E60X,S1X TK25E60X_datasheet_en_20140512.pdf?did=15196&prodName=TK25E60X
TK25E60X,S1X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+316.08 грн
10+ 273.18 грн
TK25N60X,S1F
TK25N60X,S1F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
товар відсутній
TK7A60W5,S5VX docget.jsp?did=14493&prodName=TK7A60W5
TK7A60W5,S5VX
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7A TO220SIS
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+113.24 грн
10+ 97.8 грн
Мінімальне замовлення: 3
TK8A60W5,S5VX TK8A60W5_datasheet_en_20140225.pdf?did=14495&prodName=TK8A60W5
TK8A60W5,S5VX
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
товар відсутній
TK10A60W5,S5VX TK10A60W5_datasheet_en_20140225.pdf?did=14291&prodName=TK10A60W5
TK10A60W5,S5VX
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 300 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+130.45 грн
Мінімальне замовлення: 3
TK20N60W5,S1VF TK20N60W5_datasheet_en_20150115.pdf?did=14961&prodName=TK20N60W5
TK20N60W5,S1VF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+247.27 грн
Мінімальне замовлення: 2
TK25N60X5,S1F
TK25N60X5,S1F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+292.43 грн
30+ 223.05 грн
TK39N60W5,S1VF TK39N60W5_datasheet_en_20140225.pdf?did=14536&prodName=TK39N60W5
TK39N60W5,S1VF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
на замовлення 3114 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+427.89 грн
30+ 326.6 грн
120+ 279.95 грн
510+ 233.53 грн
1020+ 199.96 грн
2010+ 188.29 грн
TK5Q65W,S1Q
TK5Q65W,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+91.03 грн
10+ 78.34 грн
Мінімальне замовлення: 4
TK6Q65W,S1Q docget.jsp?type=datasheet&lang=en&pid=TK6Q65W
TK6Q65W,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A IPAK-OS
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
TK17E65W,S1X docget.jsp?did=14508&prodName=TK17E65W
TK17E65W,S1X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 17.3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
товар відсутній
TK8A65W,S5X docget.jsp?did=15580&prodName=TK8A65W
TK8A65W,S5X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7.8A TO220SIS
товар відсутній
TK17N65W,S1F TK17N65W_datasheet_en_20140225.pdf?did=14509&prodName=TK17N65W
TK17N65W,S1F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 17.3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
товар відсутній
TK28N65W,S1F TK28N65W_datasheet_en_20140225.pdf?did=14530&prodName=TK28N65W
TK28N65W,S1F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 27.6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+397.79 грн
30+ 303.34 грн
TK14E65W5,S1X TK14E65W5_datasheet_en_20140225.pdf?did=14504&prodName=TK14E65W5
TK14E65W5,S1X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+216.45 грн
10+ 186.97 грн
Мінімальне замовлення: 2
TK35A65W5,S5X docget.jsp?did=14533&prodName=TK35A65W5
TK35A65W5,S5X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 35A TO220SIS
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
TK14N65W5,S1F TK14N65W5_datasheet_en_20140225.pdf?did=14526&prodName=TK14N65W5
TK14N65W5,S1F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+273.79 грн
30+ 209.24 грн
Мінімальне замовлення: 2
TK25A60X,S5X
TK25A60X,S5X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+255.16 грн
Мінімальне замовлення: 2
TK16E60W5,S1VX TK16E60W5_datasheet_en_20140225.pdf?did=14274&prodName=TK16E60W5
TK16E60W5,S1VX
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
товар відсутній
TK25A60X5,S5X
TK25A60X5,S5X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+293.14 грн
TK8Q65W,S1Q TK8Q65W_datasheet_en_20140930.pdf?did=15581&prodName=TK8Q65W
TK8Q65W,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7.8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+123.28 грн
Мінімальне замовлення: 3
TK5A65W,S5X docget.jsp?did=15564&prodName=TK5A65W
TK5A65W,S5X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.2A TO-220SIS
на замовлення 98 шт:
термін постачання 21-31 дні (днів)
TK6A65W,S5X TK6A65W_datasheet_en_20151225.pdf?did=15568&prodName=TK6A65W
TK6A65W,S5X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
товар відсутній
TK7A65W,S5X docget.jsp?did=15574&prodName=TK7A65W
TK7A65W,S5X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6.8A TO220SIS
товар відсутній
TK9A65W,S5X docget.jsp?did=15583&prodName=TK9A65W
TK9A65W,S5X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 9.3A TO-220SIS
товар відсутній
TK28A65W,S5X docget.jsp?did=15562&prodName=TK28A65W
TK28A65W,S5X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 27.6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+314.65 грн
10+ 254.54 грн
TBD62003APG TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003APG
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
на замовлення 1597 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+73.82 грн
10+ 63.57 грн
25+ 60.35 грн
100+ 46.53 грн
250+ 43.49 грн
500+ 38.43 грн
1000+ 29.84 грн
Мінімальне замовлення: 4
TBD62004APG TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62004APG
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
на замовлення 1022 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+74.54 грн
10+ 64.19 грн
25+ 60.93 грн
100+ 46.97 грн
250+ 43.9 грн
500+ 38.79 грн
1000+ 30.13 грн
Мінімальне замовлення: 4
TBD62083APG TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62083APG
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+96.76 грн
20+ 83.17 грн
40+ 78.94 грн
100+ 60.86 грн
260+ 56.89 грн
500+ 50.27 грн
Мінімальне замовлення: 3
TBD62084APG TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62084APG
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
на замовлення 373 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+96.76 грн
10+ 83.17 грн
25+ 78.96 грн
100+ 60.86 грн
250+ 56.89 грн
Мінімальне замовлення: 3
TBD62783APG TBD62783AFG_datasheet_en_20160511.pdf?did=30523&prodName=TBD62783AFG
TBD62783APG
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
на замовлення 14910 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+108.23 грн
20+ 92.66 грн
40+ 87.95 грн
100+ 67.8 грн
260+ 63.38 грн
500+ 56.01 грн
1000+ 43.49 грн
2500+ 40.59 грн
5000+ 38.56 грн
Мінімальне замовлення: 3
TB6562ANG,8 TB6562AFG_datasheet_en_20120928.pdf?did=2725&prodName=TB6562AFG
TB6562ANG,8
Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRV BIPOLAR 10-34V 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 10V ~ 34V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 34V
Supplier Device Package: 24-SDIP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4
товар відсутній
TBD62003AFG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003AFG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+24.36 грн
6000+ 22.29 грн
10000+ 21.45 грн
Мінімальне замовлення: 2000
TBD62003AFNG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003AFNG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+30.13 грн
6000+ 27.56 грн
10000+ 26.53 грн
Мінімальне замовлення: 2000
TBD62003AFWG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003AFWG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+20.65 грн
6000+ 18.51 грн
Мінімальне замовлення: 2000
TBD62004AFG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62004AFG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+24.61 грн
6000+ 22.52 грн
10000+ 21.67 грн
Мінімальне замовлення: 2000
TBD62004AFNG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62004AFNG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
товар відсутній
TBD62004AFWG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62004AFWG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+20.65 грн
Мінімальне замовлення: 2000
TBD62083AFG,EL TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62083AFG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+40.11 грн
2000+ 36.05 грн
5000+ 34.24 грн
10000+ 30.93 грн
Мінімальне замовлення: 1000
TBD62083AFNG,EL TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62083AFNG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+38.65 грн
6000+ 35.36 грн
10000+ 34.03 грн
Мінімальне замовлення: 2000
TBD62083AFWG,EL TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62083AFWG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
на замовлення 18071 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+35.09 грн
2000+ 31.54 грн
5000+ 29.96 грн
10000+ 27.06 грн
Мінімальне замовлення: 1000
TBD62084AFG,EL TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62084AFG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+40.11 грн
2000+ 36.05 грн
5000+ 34.24 грн
Мінімальне замовлення: 1000
TBD62084AFNG,EL TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62084AFNG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+38.65 грн
Мінімальне замовлення: 2000
TBD62084AFWG,EL TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62084AFWG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+35.09 грн
2000+ 31.54 грн
5000+ 29.96 грн
Мінімальне замовлення: 1000
TBD62502AFG,EL docget.jsp?type=datasheet&lang=en&pid=TBD62502AFG
TBD62502AFG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC LOAD SWITCH 7CH 0.3A 16SOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
TBD62502AFNG,EL docget.jsp?type=datasheet&lang=en&pid=TBD62502AFG
TBD62502AFNG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC LOAD SWITCH 7CH 0.3A 16SSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
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