Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13580) > Сторінка 105 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TB6569FTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 10V-45V 32VQFN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 4A Interface: Parallel, PWM Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 10V ~ 45V Applications: General Purpose Technology: Bi-CMOS Voltage - Load: 10V ~ 45V Supplier Device Package: 32-VQFN (5x5) Motor Type - AC, DC: Brushed DC |
на замовлення 1895 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TB6642FTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 10V-45V 32VQFNPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Interface: Parallel, PWM Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 10V ~ 45V Applications: General Purpose Technology: Bi-CMOS Voltage - Load: 10V ~ 45V Supplier Device Package: 32-VQFN (5x5) Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 4449 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TB67H400AFTG,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRIVER 4.75V-5.25V 48WQFNPackaging: Cut Tape (CT) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 6A Interface: Parallel, PWM Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 21023 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TB67H410FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRIVER 4.75V-5.25V 48WQFNPackaging: Cut Tape (CT) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 5A Interface: Parallel, PWM Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 7705 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TB67S215FTAG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 36WQFNPackaging: Cut Tape (CT) Package / Case: 36-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: PWM Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 35V Supplier Device Package: 36-WQFN (6x6) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
на замовлення 3999 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TB67S109AFTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNPackaging: Cut Tape (CT) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1 ~ 1/32 Part Status: Active |
на замовлення 6763 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TC7USB3212WBG(ELAH | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX 4 X 1:2 20WCSP Packaging: Tape & Reel (TR) Package / Case: 20-UFBGA, WLCSP Mounting Type: Surface Mount Circuit: 4 x 1:2 Type: Multiplexer/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 1.95V Independent Circuits: 4 Voltage Supply Source: Single Supply Supplier Device Package: 2-WCSP (2x1.6) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
DF2B36FU,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 28VWM 40VC USCPower Line Protection: No Power - Peak Pulse: 150W Voltage - Clamping (Max) @ Ipp: 40V Voltage - Breakdown (Min): 32V Bidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 28V Current - Peak Pulse (10/1000µs): 1A (8/20µs) Capacitance @ Frequency: 6.5pF @ 1MHz Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
на замовлення 84000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DF3D36FU,LF | Toshiba Semiconductor and Storage |
Description: ESD PROTECTION DIODE (BI-DIRECTI |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
SSM3K72CFS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 170MA SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3K72KCT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 400MA CST3Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: CST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3K7002KF,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 400MA S-MINIInput Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: S-Mini Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 270mW (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 69000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3K341R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 6A SOT-23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V |
на замовлення 138000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TCK107AF,LF | Toshiba Semiconductor and Storage |
Description: IC PWR LOAD SWITCH LO ON-RES SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Rds On (Typ): 63mOhm Voltage - Load: 1.1V ~ 5.5V Current - Output (Max): 1A Supplier Device Package: SMV |
на замовлення 102000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| SSM6N61NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
|
SSM6J511NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 14A 6UDFNBPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3K116TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 2.2A UFMInput Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: UFM Vgs(th) (Max) @ Id: 1.1V @ 100µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3K16FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 100MA USMDrive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Supplier Device Package: USM Vgs(th) (Max) @ Id: 1.1V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3J15FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA USMInput Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Supplier Device Package: USM Vgs(th) (Max) @ Id: 1.7V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3J15FV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA VESMInput Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Part Status: Active Supplier Device Package: VESM Vgs(th) (Max) @ Id: 1.7V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TCR2EF20,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2V 200MA SMVProtection Features: Over Current Voltage Dropout (Max): 0.31V @ 150mA PSRR: 73dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2V Supplier Device Package: SMV Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 60 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TCR2DG15,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.5V 200MA 4WCSP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
TC7PZ07FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V US6Supplier Device Package: US6 Current - Output High, Low: -, 32mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: Open Drain Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TC7PZ17FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 5.5V US6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US6 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
74VHCV245FT(BJ) | Toshiba Semiconductor and Storage |
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
TC7USB3212WBG(ELAH | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX 4 X 1:2 20WCSP Supplier Device Package: 2-WCSP (2x1.6) Voltage Supply Source: Single Supply Independent Circuits: 4 Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 85°C Type: Multiplexer/Demultiplexer Circuit: 4 x 1:2 Mounting Type: Surface Mount Package / Case: 20-UFBGA, WLCSP Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DF2B36FU,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 28VWM 40VC USCPower Line Protection: No Power - Peak Pulse: 150W Voltage - Clamping (Max) @ Ipp: 40V Voltage - Breakdown (Min): 32V Bidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 28V Current - Peak Pulse (10/1000µs): 1A (8/20µs) Capacitance @ Frequency: 6.5pF @ 1MHz Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 85310 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DF3D36FU,LF | Toshiba Semiconductor and Storage |
Description: ESD PROTECTION DIODE (BI-DIRECTI |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
SSM3K72CFS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 170MA SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 49875 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3K72KCT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 400MA CST3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: CST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
на замовлення 305438 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3K7002KF,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 400MA S-MINIInput Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: S-Mini Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 270mW (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 71521 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3K341R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 6A SOT-23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V |
на замовлення 140535 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TCK107AF,LF | Toshiba Semiconductor and Storage |
Description: IC PWR LOAD SWITCH LO ON-RES SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Rds On (Typ): 63mOhm Voltage - Load: 1.1V ~ 5.5V Current - Output (Max): 1A Supplier Device Package: SMV |
на замовлення 102897 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| SSM6N61NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
SSM6J511NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 14A 6UDFNBPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V |
на замовлення 32778 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3K116TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 2.2A UFMInput Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: UFM Vgs(th) (Max) @ Id: 1.1V @ 100µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 39100 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3K16FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 100MA USMPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: USM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V |
на замовлення 29064 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3J15FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA USMPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: USM Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V |
на замовлення 22168 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3J15FV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: VESM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V |
на замовлення 22930 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TCR2EF20,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2V 200MA SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 2V Control Features: Enable Part Status: Active PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.31V @ 150mA Protection Features: Over Current |
на замовлення 12856 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TCR2DG15,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.5V 200MA 4WCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TC7PZ07FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: US6 |
на замовлення 6746 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TC7PZ17FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 5.5V US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US6 |
на замовлення 7669 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
74VHCV245FT(BJ) | Toshiba Semiconductor and Storage |
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DF3D36FU,LF | Toshiba Semiconductor and Storage |
Description: ESD PROTECTION DIODE (BI-DIRECTI |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
| SSM6N61NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
74VHCV245FT(BJ) | Toshiba Semiconductor and Storage |
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TBD62064AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR DRIVER N-CHAN 1:1 16HSOPPackaging: Tape & Reel (TR) Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Rds On (Typ): 430mOhm Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.25A Ratio - Input:Output: 1:1 Supplier Device Package: 16-HSOP Part Status: Active |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1SS389,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA ESCPackaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1SS389,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA ESCPackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
на замовлення 25506 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TBD62064AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR DRIVER N-CHAN 1:1 16HSOPPackaging: Cut Tape (CT) Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Rds On (Typ): 430mOhm Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.25A Ratio - Input:Output: 1:1 Supplier Device Package: 16-HSOP Part Status: Active |
на замовлення 27277 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TLP184(GB,SE | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH TRANS 6-SOPPackaging: Tube Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 149 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM6L16FETE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
|
SSM6L16FETE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6 |
на замовлення 79 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
|
TLP2703(E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active Turn On / Turn Off Time (Typ): 330ns, 2.5µs Voltage - Output (Max): 18V Supplier Device Package: 6-SO Current Transfer Ratio (Max): 8000% @ 500µA Current Transfer Ratio (Min): 900% @ 500µA Voltage - Isolation: 5000Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.47V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Darlington Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
TLP2703(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOPackage / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) Turn On / Turn Off Time (Typ): 330ns, 2.5µs Voltage - Output (Max): 18V Supplier Device Package: 6-SO Current Transfer Ratio (Max): 8000% @ 500µA Current Transfer Ratio (Min): 900% @ 500µA Voltage - Isolation: 5000Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.47V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Darlington Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
TLP2703(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active Turn On / Turn Off Time (Typ): 330ns, 2.5µs Voltage - Output (Max): 18V Supplier Device Package: 6-SO Current Transfer Ratio (Max): 8000% @ 500µA Current Transfer Ratio (Min): 900% @ 500µA Voltage - Isolation: 5000Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.47V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Darlington Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
на замовлення 3195 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TPHR6503PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 150A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TPN3R704PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 80A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V Power Dissipation (Max): 630mW (Ta), 86W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TPN2R304PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 80A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V Power Dissipation (Max): 630mW (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 300µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
|
| TB6569FTG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 10V-45V 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 10V-45V 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - AC, DC: Brushed DC
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 170.09 грн |
| 10+ | 147.56 грн |
| 25+ | 139.18 грн |
| 100+ | 111.29 грн |
| 250+ | 104.50 грн |
| 500+ | 91.43 грн |
| 1000+ | 74.52 грн |
| TB6642FTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 10V-45V 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 10V-45V 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 4449 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 162.25 грн |
| 10+ | 116.01 грн |
| 25+ | 105.85 грн |
| 100+ | 88.88 грн |
| 250+ | 83.90 грн |
| 500+ | 81.50 грн |
| TB67H400AFTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRIVER 4.75V-5.25V 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MTR DRIVER 4.75V-5.25V 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 21023 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 217.12 грн |
| 10+ | 157.15 грн |
| 25+ | 144.01 грн |
| 100+ | 121.65 грн |
| 250+ | 115.21 грн |
| 500+ | 111.33 грн |
| 1000+ | 106.37 грн |
| TB67H410FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRIVER 4.75V-5.25V 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MTR DRIVER 4.75V-5.25V 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 7705 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 162.25 грн |
| 10+ | 116.01 грн |
| 25+ | 105.88 грн |
| 100+ | 88.99 грн |
| 250+ | 84.03 грн |
| 500+ | 81.05 грн |
| 1000+ | 77.30 грн |
| TB67S215FTAG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 36WQFN
Packaging: Cut Tape (CT)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 35V
Supplier Device Package: 36-WQFN (6x6)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 36WQFN
Packaging: Cut Tape (CT)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 35V
Supplier Device Package: 36-WQFN (6x6)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
на замовлення 3999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 162.25 грн |
| 10+ | 116.01 грн |
| 25+ | 105.88 грн |
| 100+ | 88.99 грн |
| 250+ | 84.03 грн |
| 500+ | 81.05 грн |
| 1000+ | 77.30 грн |
| TB67S109AFTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
Part Status: Active
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
Part Status: Active
на замовлення 6763 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.85 грн |
| 10+ | 152.01 грн |
| 25+ | 139.21 грн |
| 100+ | 117.45 грн |
| 250+ | 111.15 грн |
| 500+ | 109.24 грн |
| TC7USB3212WBG(ELAH |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4 X 1:2 20WCSP
Packaging: Tape & Reel (TR)
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Circuit: 4 x 1:2
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 2-WCSP (2x1.6)
Description: IC MUX/DEMUX 4 X 1:2 20WCSP
Packaging: Tape & Reel (TR)
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Circuit: 4 x 1:2
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 2-WCSP (2x1.6)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DF2B36FU,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 28VWM 40VC USC
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 40V
Voltage - Breakdown (Min): 32V
Bidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1MHz
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Description: TVS DIODE 28VWM 40VC USC
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 40V
Voltage - Breakdown (Min): 32V
Bidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1MHz
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.15 грн |
| 9000+ | 4.22 грн |
| DF3D36FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: ESD PROTECTION DIODE (BI-DIRECTI
Description: ESD PROTECTION DIODE (BI-DIRECTI
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| SSM3K72CFS,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 170MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 170MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.37 грн |
| 6000+ | 2.03 грн |
| 9000+ | 1.91 грн |
| 15000+ | 1.65 грн |
| 21000+ | 1.57 грн |
| 30000+ | 1.50 грн |
| SSM3K72KCT,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 400MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 60V 400MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 2.68 грн |
| 30000+ | 2.21 грн |
| SSM3K7002KF,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 400MA S-MINI
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: S-Mini
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 270mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 400MA S-MINI
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: S-Mini
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 270mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.13 грн |
| 9000+ | 3.36 грн |
| SSM3K341R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Description: MOSFET N-CH 60V 6A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
на замовлення 138000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.77 грн |
| 9000+ | 10.74 грн |
| TCK107AF,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR LOAD SWITCH LO ON-RES SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Rds On (Typ): 63mOhm
Voltage - Load: 1.1V ~ 5.5V
Current - Output (Max): 1A
Supplier Device Package: SMV
Description: IC PWR LOAD SWITCH LO ON-RES SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Rds On (Typ): 63mOhm
Voltage - Load: 1.1V ~ 5.5V
Current - Output (Max): 1A
Supplier Device Package: SMV
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.09 грн |
| 6000+ | 8.50 грн |
| 9000+ | 8.37 грн |
| 15000+ | 7.72 грн |
| 21000+ | 7.64 грн |
| 30000+ | 7.56 грн |
| SSM6N61NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A
Description: MOSFET 2P-CH 20V 4A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSM6J511NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.84 грн |
| 9000+ | 9.92 грн |
| SSM3K116TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.2A UFM
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 2.2A UFM
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.32 грн |
| 6000+ | 9.52 грн |
| 9000+ | 8.57 грн |
| 30000+ | 7.93 грн |
| SSM3K16FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Description: MOSFET N-CH 20V 100MA USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.48 грн |
| 6000+ | 3.11 грн |
| 9000+ | 2.58 грн |
| SSM3J15FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA USM
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 100MA USM
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.24 грн |
| 6000+ | 2.79 грн |
| 9000+ | 2.62 грн |
| 15000+ | 2.28 грн |
| 21000+ | 2.18 грн |
| SSM3J15FV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 2.65 грн |
| TCR2EF20,LM(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 200MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.31V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 2V 200MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.31V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.53 грн |
| 6000+ | 3.28 грн |
| 9000+ | 3.23 грн |
| TCR2DG15,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.5V 200MA 4WCSP
Description: IC REG LINEAR 1.5V 200MA 4WCSP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TC7PZ07FU,LJ(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V US6
Supplier Device Package: US6
Current - Output High, Low: -, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: IC BUFFER NON-INVERT 5.5V US6
Supplier Device Package: US6
Current - Output High, Low: -, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.51 грн |
| TC7PZ17FU,LJ(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 5.5V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
Description: IC BUFFER NON-INVERTING 5.5V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.95 грн |
| 6000+ | 2.74 грн |
| 74VHCV245FT(BJ) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TC7USB3212WBG(ELAH |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4 X 1:2 20WCSP
Supplier Device Package: 2-WCSP (2x1.6)
Voltage Supply Source: Single Supply
Independent Circuits: 4
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 4 x 1:2
Mounting Type: Surface Mount
Package / Case: 20-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC MUX/DEMUX 4 X 1:2 20WCSP
Supplier Device Package: 2-WCSP (2x1.6)
Voltage Supply Source: Single Supply
Independent Circuits: 4
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 4 x 1:2
Mounting Type: Surface Mount
Package / Case: 20-UFBGA, WLCSP
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| DF2B36FU,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 28VWM 40VC USC
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 40V
Voltage - Breakdown (Min): 32V
Bidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1MHz
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: TVS DIODE 28VWM 40VC USC
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 40V
Voltage - Breakdown (Min): 32V
Bidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1MHz
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 85310 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.30 грн |
| 21+ | 14.42 грн |
| 50+ | 10.36 грн |
| 100+ | 8.49 грн |
| 500+ | 6.28 грн |
| DF3D36FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: ESD PROTECTION DIODE (BI-DIRECTI
Description: ESD PROTECTION DIODE (BI-DIRECTI
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| SSM3K72CFS,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 170MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 170MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 49875 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.76 грн |
| 43+ | 7.09 грн |
| 100+ | 4.36 грн |
| 500+ | 2.98 грн |
| 1000+ | 2.61 грн |
| SSM3K72KCT,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 400MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 60V 400MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 305438 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.68 грн |
| 32+ | 9.43 грн |
| 50+ | 6.73 грн |
| 100+ | 5.49 грн |
| 500+ | 4.01 грн |
| SSM3K7002KF,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 400MA S-MINI
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: S-Mini
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 270mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 400MA S-MINI
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: S-Mini
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 270mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 71521 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.60 грн |
| 26+ | 11.85 грн |
| 50+ | 8.45 грн |
| 100+ | 6.90 грн |
| 500+ | 5.08 грн |
| SSM3K341R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Description: MOSFET N-CH 60V 6A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
на замовлення 140535 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.87 грн |
| 10+ | 32.53 грн |
| 50+ | 23.81 грн |
| 100+ | 19.66 грн |
| 500+ | 14.98 грн |
| TCK107AF,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR LOAD SWITCH LO ON-RES SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Rds On (Typ): 63mOhm
Voltage - Load: 1.1V ~ 5.5V
Current - Output (Max): 1A
Supplier Device Package: SMV
Description: IC PWR LOAD SWITCH LO ON-RES SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Rds On (Typ): 63mOhm
Voltage - Load: 1.1V ~ 5.5V
Current - Output (Max): 1A
Supplier Device Package: SMV
на замовлення 102897 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.95 грн |
| 21+ | 14.49 грн |
| 25+ | 12.89 грн |
| 100+ | 10.41 грн |
| 250+ | 9.60 грн |
| 500+ | 9.11 грн |
| 1000+ | 8.57 грн |
| SSM6N61NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A
Description: MOSFET 2P-CH 20V 4A
товару немає в наявності
В кошику
од. на суму грн.
| SSM6J511NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
на замовлення 32778 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.73 грн |
| 10+ | 30.64 грн |
| 50+ | 22.33 грн |
| 100+ | 18.42 грн |
| 500+ | 13.96 грн |
| SSM3K116TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.2A UFM
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 2.2A UFM
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 39100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.41 грн |
| 11+ | 28.61 грн |
| 100+ | 17.15 грн |
| 500+ | 14.90 грн |
| 1000+ | 10.13 грн |
| SSM3K16FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Description: MOSFET N-CH 20V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
на замовлення 29064 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.38 грн |
| 23+ | 13.66 грн |
| 100+ | 6.68 грн |
| 500+ | 5.23 грн |
| 1000+ | 3.63 грн |
| SSM3J15FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Description: MOSFET P-CH 30V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
на замовлення 22168 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.68 грн |
| 32+ | 9.43 грн |
| 100+ | 5.86 грн |
| 500+ | 4.02 грн |
| 1000+ | 3.54 грн |
| SSM3J15FV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Description: MOSFET P-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
на замовлення 22930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.68 грн |
| 34+ | 9.06 грн |
| 50+ | 6.46 грн |
| 100+ | 5.27 грн |
| 500+ | 3.85 грн |
| TCR2EF20,LM(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
на замовлення 12856 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.41 грн |
| 50+ | 6.04 грн |
| 58+ | 5.28 грн |
| 100+ | 4.19 грн |
| 250+ | 3.83 грн |
| 500+ | 3.60 грн |
| 1000+ | 3.36 грн |
| TCR2DG15,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.5V 200MA 4WCSP
Description: IC REG LINEAR 1.5V 200MA 4WCSP
товару немає в наявності
В кошику
од. на суму грн.
| TC7PZ07FU,LJ(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: US6
Description: IC BUFFER NON-INVERT 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: US6
на замовлення 6746 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.30 грн |
| 23+ | 13.59 грн |
| 28+ | 11.05 грн |
| 100+ | 7.73 грн |
| 250+ | 6.42 грн |
| 500+ | 5.61 грн |
| 1000+ | 4.85 грн |
| TC7PZ17FU,LJ(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
Description: IC BUFFER NON-INVERTING 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
на замовлення 7669 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.84 грн |
| 58+ | 5.28 грн |
| 66+ | 4.59 грн |
| 100+ | 3.62 грн |
| 250+ | 3.30 грн |
| 500+ | 3.10 грн |
| 1000+ | 2.89 грн |
| 74VHCV245FT(BJ) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| DF3D36FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: ESD PROTECTION DIODE (BI-DIRECTI
Description: ESD PROTECTION DIODE (BI-DIRECTI
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| SSM6N61NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A
Description: MOSFET 2P-CH 20V 4A
товару немає в наявності
В кошику
од. на суму грн.
| 74VHCV245FT(BJ) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| TBD62064AFG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 95.20 грн |
| 3000+ | 89.57 грн |
| 4500+ | 88.52 грн |
| 1SS389,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 2.58 грн |
| 24000+ | 2.11 грн |
| 1SS389,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
на замовлення 25506 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.89 грн |
| 34+ | 8.91 грн |
| 50+ | 6.36 грн |
| 100+ | 5.18 грн |
| 500+ | 3.77 грн |
| TBD62064AFG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
на замовлення 27277 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.49 грн |
| 10+ | 128.31 грн |
| 25+ | 117.32 грн |
| 100+ | 98.75 грн |
| 250+ | 93.33 грн |
| 500+ | 91.19 грн |
| TLP184(GB,SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 149 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 19.08 грн |
| SSM6L16FETE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| SSM6L16FETE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
| TLP2703(E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| TLP2703(TP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 39.17 грн |
| 3000+ | 35.93 грн |
| TLP2703(TP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
на замовлення 3195 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.84 грн |
| 10+ | 64.46 грн |
| 100+ | 48.37 грн |
| 500+ | 38.70 грн |
| TPHR6503PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 63.12 грн |
| TPN3R704PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 22.20 грн |
| 10000+ | 19.90 грн |
| 15000+ | 19.15 грн |
| TPN2R304PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 26.23 грн |
| 15000+ | 22.72 грн |























.jpg)





