Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13460) > Сторінка 130 з 225

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1SS360,LJ(CT 1SS360,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=3331&prodName=1SS360 Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+1.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
1SS360,LJ(CT 1SS360,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=3331&prodName=1SS360 Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 6364 шт:
термін постачання 21-31 дні (днів)
31+10.62 грн
45+7.00 грн
100+4.89 грн
500+3.32 грн
1000+3.04 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
TB9056FNG(O,EL) TB9056FNG(O,EL) Toshiba Semiconductor and Storage TB9056FNG_datasheet_en_20190415.pdf?did=64558&prodName=TB9056FNG Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Servo DC
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TB9056FNG(O,EL) TB9056FNG(O,EL) Toshiba Semiconductor and Storage TB9056FNG_datasheet_en_20190415.pdf?did=64558&prodName=TB9056FNG Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Servo DC
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TB67B000AHG TB67B000AHG Toshiba Semiconductor and Storage TB67B000AHG_datasheet_en_20190530.pdf?did=66548&prodName=TB67B000AHG Description: BRUSHLESS MOTOR DRIVER, 600V, 2A
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -30°C ~ 115°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
1+600.20 грн
10+522.45 грн
25+498.11 грн
В кошику  од. на суму  грн.
TK3R3A06PL,S4X TK3R3A06PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=58713&prodName=TK3R3A06PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
2+201.70 грн
50+96.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK49N65W5,S1F TK49N65W5,S1F Toshiba Semiconductor and Storage docget.jsp?did=14537&prodName=TK49N65W5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+973.38 грн
30+530.50 грн
В кошику  од. на суму  грн.
TK3R2A10PL,S4X TK3R2A10PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=60593&prodName=TK3R2A10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
2+289.89 грн
50+142.82 грн
100+129.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK6R7A10PL,S4X TK6R7A10PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=60599&prodName=TK6R7A10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 28A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3455 pF @ 50 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
3+158.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TPN5R203PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=55524&prodName=TPN5R203PL Description: MOSFET N-CH 30V 38A 8TSON
товару немає в наявності
В кошику  од. на суму  грн.
TK28N65W5,S1F TK28N65W5,S1F Toshiba Semiconductor and Storage docget.jsp?did=14529&prodName=TK28N65W5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
1+578.97 грн
30+296.01 грн
В кошику  од. на суму  грн.
TPH1R405PL,L1Q TPH1R405PL,L1Q Toshiba Semiconductor and Storage TPH1R405PL_datasheet_en_20191030.pdf?did=53829&prodName=TPH1R405PL Description: MOSFET N-CH 45V 120A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
товару немає в наявності
В кошику  од. на суму  грн.
TK7R4A10PL,S4X TK7R4A10PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=60497&prodName=TK7R4A10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
3+137.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK4R1A10PL,S4X TK4R1A10PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=60610&prodName=TK4R1A10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 40A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
2+200.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TPH2R003PL,LQ TPH2R003PL,LQ Toshiba Semiconductor and Storage TPH2R003PL_datasheet_en_20160906.pdf?did=54498&prodName=TPH2R003PL Description: MOSFET N-CH 30V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+32.56 грн
6000+30.74 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TK110E10PL,S1X TK110E10PL,S1X Toshiba Semiconductor and Storage docget.jsp?did=60605&prodName=TK110E10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
на замовлення 7334 шт:
термін постачання 21-31 дні (днів)
3+140.45 грн
50+67.80 грн
100+62.86 грн
500+47.06 грн
1000+42.08 грн
2000+40.00 грн
5000+37.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK3R2E06PL,S1X TK3R2E06PL,S1X Toshiba Semiconductor and Storage docget.jsp?did=58637&prodName=TK3R2E06PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
2+198.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK49N65W,S1F TK49N65W,S1F Toshiba Semiconductor and Storage docget.jsp?did=14538&prodName=TK49N65W Description: PB-F POWER MOSFET TRANSISTOR TO2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
1+1022.38 грн
30+577.26 грн
В кошику  од. на суму  грн.
TK3R9E10PL,S1X TK3R9E10PL,S1X Toshiba Semiconductor and Storage docget.jsp?did=60597&prodName=TK3R9E10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
2+226.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK5R3A06PL,S4X TK5R3A06PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=58508&prodName=TK5R3A06PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 28A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 30 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
3+133.92 грн
50+54.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TPCA8047-H(T2L1,VM TPCA8047-H(T2L1,VM Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TPH2R003PL,LQ TPH2R003PL,LQ Toshiba Semiconductor and Storage TPH2R003PL_datasheet_en_20160906.pdf?did=54498&prodName=TPH2R003PL Description: MOSFET N-CH 30V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
на замовлення 10657 шт:
термін постачання 21-31 дні (днів)
4+102.07 грн
10+68.41 грн
100+51.58 грн
500+38.14 грн
1000+34.84 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TPN5R203PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=55524&prodName=TPN5R203PL Description: MOSFET N-CH 30V 38A 8TSON
на замовлення 1476 шт:
термін постачання 21-31 дні (днів)
6+54.71 грн
10+45.61 грн
100+34.06 грн
500+25.12 грн
1000+19.41 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TPH1R405PL,L1Q TPH1R405PL,L1Q Toshiba Semiconductor and Storage TPH1R405PL_datasheet_en_20191030.pdf?did=53829&prodName=TPH1R405PL Description: MOSFET N-CH 45V 120A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
на замовлення 4136 шт:
термін постачання 21-31 дні (днів)
3+160.87 грн
10+99.16 грн
100+67.01 грн
500+50.09 грн
1000+45.97 грн
2000+42.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TPCA8052-H(T2L1,VM TPCA8052-H(T2L1,VM Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 20A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
товару немає в наявності
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TPCA8047-H(T2L1,VM TPCA8047-H(T2L1,VM Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 32A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
товару немає в наявності
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TPCA8052-H(T2L1,VM TPCA8052-H(T2L1,VM Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
товару немає в наявності
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TC78H651AFNG,EL TC78H651AFNG,EL Toshiba Semiconductor and Storage TC78H651AFNG_datasheet_en_20190131.pdf?did=64622&prodName=TC78H651AFNG Description: BRUSHED DC MOTOR DRIVER, DUAL-CH
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 7.5V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
товару немає в наявності
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TC78H651AFNG,EL TC78H651AFNG,EL Toshiba Semiconductor and Storage TC78H651AFNG_datasheet_en_20190131.pdf?did=64622&prodName=TC78H651AFNG Description: BRUSHED DC MOTOR DRIVER, DUAL-CH
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 7.5V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 2714 шт:
термін постачання 21-31 дні (днів)
3+146.17 грн
10+87.44 грн
25+73.54 грн
100+54.20 грн
250+46.92 грн
500+42.43 грн
1000+38.03 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DF2B5M4ASL,L3F DF2B5M4ASL,L3F Toshiba Semiconductor and Storage DF2B5M4ASL_datasheet_en_20190805.pdf?did=66263&prodName=DF2B5M4ASL Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
товару немає в наявності
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DF2B5M4ASL,L3F DF2B5M4ASL,L3F Toshiba Semiconductor and Storage DF2B5M4ASL_datasheet_en_20190805.pdf?did=66263&prodName=DF2B5M4ASL Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 4638 шт:
термін постачання 21-31 дні (днів)
20+17.15 грн
29+11.01 грн
100+4.74 грн
500+4.20 грн
1000+3.96 грн
2000+3.89 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
TLP250(LF5,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP785(F Toshiba Semiconductor and Storage TLP785_datasheet_en_20190311.pdf?did=10569&prodName=TLP785 Description: OPTOISOLATOR 5KV 1CH TRANS
Packaging: Tube
Output Type: Transistor
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику  од. на суму  грн.
TLP624-4(BV,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP250F(D4INV-T4,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP785F(D4BLT7,F TLP785F(D4BLT7,F Toshiba Semiconductor and Storage docget.jsp?did=10569&prodName=TLP785F Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику  од. на суму  грн.
TLP352F(D4-TP4,S) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TORX1850(MEIDEN,F) Toshiba Semiconductor and Storage Description: IC TRANSCEIVING MODULE
Packaging: Tray
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP700AF(D4-TP,6) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
TLP250(D4-FA-TP1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP250(D4-TP4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP250HF(D4-TP4,F) TLP250HF(D4-TP4,F) Toshiba Semiconductor and Storage TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
товару немає в наявності
В кошику  од. на суму  грн.
TLP161J(T5TL,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP627F-2(D4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP250HF(F) TLP250HF(F) Toshiba Semiconductor and Storage TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H Description: OPTOISO 3.75KV PUSH PULL 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
товару немає в наявності
В кошику  од. на суму  грн.
TLP5701(LF4,E TLP5701(LF4,E Toshiba Semiconductor and Storage datasheet_en_20221208.pdf?did=15224 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Part Status: Active
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 87 шт:
термін постачання 21-31 дні (днів)
4+94.72 грн
10+64.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TLP250(D4-TP5,NP,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP627-4(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP250F(D4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP250(D4-SANYD,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP351F(TP4,Z,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP250HF(D4-LF4,F) TLP250HF(D4-LF4,F) Toshiba Semiconductor and Storage TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
товару немає в наявності
В кошику  од. на суму  грн.
TLP250H(TP5,F) Toshiba Semiconductor and Storage TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
товару немає в наявності
В кошику  од. на суму  грн.
TLP250(D4-TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP785(D4-LF6,F Toshiba Semiconductor and Storage docget.jsp?did=10569&prodName=TLP785 Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику  од. на суму  грн.
TLP120(HO-GB,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
TLP250(FANUC,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP161J(T5TR,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP250HF(TP4,F) TLP250HF(TP4,F) Toshiba Semiconductor and Storage TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
товару немає в наявності
В кошику  од. на суму  грн.
TLP2768A(E TLP2768A(E Toshiba Semiconductor and Storage docget.jsp?did=28764&prodName=TLP2768A Description: OPTOISO 5KV OPEN COLLECTOR 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
4+93.91 грн
10+64.09 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
1SS360,LJ(CT docget.jsp?did=3331&prodName=1SS360
1SS360,LJ(CT
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+1.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
1SS360,LJ(CT docget.jsp?did=3331&prodName=1SS360
1SS360,LJ(CT
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 6364 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+10.62 грн
45+7.00 грн
100+4.89 грн
500+3.32 грн
1000+3.04 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
TB9056FNG(O,EL) TB9056FNG_datasheet_en_20190415.pdf?did=64558&prodName=TB9056FNG
TB9056FNG(O,EL)
Виробник: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Servo DC
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TB9056FNG(O,EL) TB9056FNG_datasheet_en_20190415.pdf?did=64558&prodName=TB9056FNG
TB9056FNG(O,EL)
Виробник: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE H SWITCH MOTOR DRIVER
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 7V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Servo DC
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TB67B000AHG TB67B000AHG_datasheet_en_20190530.pdf?did=66548&prodName=TB67B000AHG
TB67B000AHG
Виробник: Toshiba Semiconductor and Storage
Description: BRUSHLESS MOTOR DRIVER, 600V, 2A
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -30°C ~ 115°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+600.20 грн
10+522.45 грн
25+498.11 грн
В кошику  од. на суму  грн.
TK3R3A06PL,S4X docget.jsp?did=58713&prodName=TK3R3A06PL
TK3R3A06PL,S4X
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+201.70 грн
50+96.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK49N65W5,S1F docget.jsp?did=14537&prodName=TK49N65W5
TK49N65W5,S1F
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+973.38 грн
30+530.50 грн
В кошику  од. на суму  грн.
TK3R2A10PL,S4X docget.jsp?did=60593&prodName=TK3R2A10PL
TK3R2A10PL,S4X
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+289.89 грн
50+142.82 грн
100+129.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK6R7A10PL,S4X docget.jsp?did=60599&prodName=TK6R7A10PL
TK6R7A10PL,S4X
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 28A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3455 pF @ 50 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+158.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TPN5R203PL,LQ docget.jsp?did=55524&prodName=TPN5R203PL
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 38A 8TSON
товару немає в наявності
В кошику  од. на суму  грн.
TK28N65W5,S1F docget.jsp?did=14529&prodName=TK28N65W5
TK28N65W5,S1F
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+578.97 грн
30+296.01 грн
В кошику  од. на суму  грн.
TPH1R405PL,L1Q TPH1R405PL_datasheet_en_20191030.pdf?did=53829&prodName=TPH1R405PL
TPH1R405PL,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 120A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
товару немає в наявності
В кошику  од. на суму  грн.
TK7R4A10PL,S4X docget.jsp?did=60497&prodName=TK7R4A10PL
TK7R4A10PL,S4X
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK4R1A10PL,S4X docget.jsp?did=60610&prodName=TK4R1A10PL
TK4R1A10PL,S4X
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 40A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+200.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TPH2R003PL,LQ TPH2R003PL_datasheet_en_20160906.pdf?did=54498&prodName=TPH2R003PL
TPH2R003PL,LQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+32.56 грн
6000+30.74 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TK110E10PL,S1X docget.jsp?did=60605&prodName=TK110E10PL
TK110E10PL,S1X
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
на замовлення 7334 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+140.45 грн
50+67.80 грн
100+62.86 грн
500+47.06 грн
1000+42.08 грн
2000+40.00 грн
5000+37.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK3R2E06PL,S1X docget.jsp?did=58637&prodName=TK3R2E06PL
TK3R2E06PL,S1X
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+198.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK49N65W,S1F docget.jsp?did=14538&prodName=TK49N65W
TK49N65W,S1F
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1022.38 грн
30+577.26 грн
В кошику  од. на суму  грн.
TK3R9E10PL,S1X docget.jsp?did=60597&prodName=TK3R9E10PL
TK3R9E10PL,S1X
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+226.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK5R3A06PL,S4X docget.jsp?did=58508&prodName=TK5R3A06PL
TK5R3A06PL,S4X
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 28A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 30 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.92 грн
50+54.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TPCA8047-H(T2L1,VM
TPCA8047-H(T2L1,VM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
товару немає в наявності
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TPH2R003PL,LQ TPH2R003PL_datasheet_en_20160906.pdf?did=54498&prodName=TPH2R003PL
TPH2R003PL,LQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
на замовлення 10657 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.07 грн
10+68.41 грн
100+51.58 грн
500+38.14 грн
1000+34.84 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TPN5R203PL,LQ docget.jsp?did=55524&prodName=TPN5R203PL
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 38A 8TSON
на замовлення 1476 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+54.71 грн
10+45.61 грн
100+34.06 грн
500+25.12 грн
1000+19.41 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TPH1R405PL,L1Q TPH1R405PL_datasheet_en_20191030.pdf?did=53829&prodName=TPH1R405PL
TPH1R405PL,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 120A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
на замовлення 4136 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+160.87 грн
10+99.16 грн
100+67.01 грн
500+50.09 грн
1000+45.97 грн
2000+42.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TPCA8052-H(T2L1,VM
TPCA8052-H(T2L1,VM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
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TPCA8047-H(T2L1,VM
TPCA8047-H(T2L1,VM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 32A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
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TPCA8052-H(T2L1,VM
TPCA8052-H(T2L1,VM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
товару немає в наявності
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TC78H651AFNG,EL TC78H651AFNG_datasheet_en_20190131.pdf?did=64622&prodName=TC78H651AFNG
TC78H651AFNG,EL
Виробник: Toshiba Semiconductor and Storage
Description: BRUSHED DC MOTOR DRIVER, DUAL-CH
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 7.5V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
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TC78H651AFNG,EL TC78H651AFNG_datasheet_en_20190131.pdf?did=64622&prodName=TC78H651AFNG
TC78H651AFNG,EL
Виробник: Toshiba Semiconductor and Storage
Description: BRUSHED DC MOTOR DRIVER, DUAL-CH
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 7.5V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 2714 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.17 грн
10+87.44 грн
25+73.54 грн
100+54.20 грн
250+46.92 грн
500+42.43 грн
1000+38.03 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DF2B5M4ASL,L3F DF2B5M4ASL_datasheet_en_20190805.pdf?did=66263&prodName=DF2B5M4ASL
DF2B5M4ASL,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
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DF2B5M4ASL,L3F DF2B5M4ASL_datasheet_en_20190805.pdf?did=66263&prodName=DF2B5M4ASL
DF2B5M4ASL,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 4638 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+17.15 грн
29+11.01 грн
100+4.74 грн
500+4.20 грн
1000+3.96 грн
2000+3.89 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
TLP250(LF5,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
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В кошику  од. на суму  грн.
TLP785(F TLP785_datasheet_en_20190311.pdf?did=10569&prodName=TLP785
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS
Packaging: Tube
Output Type: Transistor
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP624-4(BV,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
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TLP250F(D4INV-T4,F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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TLP785F(D4BLT7,F docget.jsp?did=10569&prodName=TLP785F
TLP785F(D4BLT7,F
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP352F(D4-TP4,S)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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TORX1850(MEIDEN,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVING MODULE
Packaging: Tray
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP700AF(D4-TP,6)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
TLP250(D4-FA-TP1,F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP250(D4-TP4,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
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TLP250HF(D4-TP4,F) TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H
TLP250HF(D4-TP4,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
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TLP161J(T5TL,U,C,F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP627F-2(D4,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP250HF(F) TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H
TLP250HF(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
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TLP5701(LF4,E datasheet_en_20221208.pdf?did=15224
TLP5701(LF4,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Part Status: Active
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 87 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+94.72 грн
10+64.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TLP250(D4-TP5,NP,F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP627-4(LF1,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP250F(D4,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP250(D4-SANYD,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
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TLP351F(TP4,Z,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
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TLP250HF(D4-LF4,F) TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H
TLP250HF(D4-LF4,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
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TLP250H(TP5,F) TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
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TLP250(D4-TP1,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
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TLP785(D4-LF6,F docget.jsp?did=10569&prodName=TLP785
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP120(HO-GB,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
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TLP250(FANUC,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
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TLP161J(T5TR,U,C,F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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TLP250HF(TP4,F) TLP250H_datasheet_en_20151224.pdf?did=13872&prodName=TLP250H
TLP250HF(TP4,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 5mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 40kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 2 A
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TLP2768A(E docget.jsp?did=28764&prodName=TLP2768A
TLP2768A(E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV OPEN COLLECTOR 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.91 грн
10+64.09 грн
Мінімальне замовлення: 4
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