Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13584) > Сторінка 134 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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74VHC27FT | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 3CH 3-INP 14TSSOPBPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 3 Supplier Device Package: 14-TSSOPB Input Logic Level - High: 2V ~ 4.5V Input Logic Level - Low: 0.1V ~ 36V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74VHC27FT | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 3CH 3-INP 14TSSOPBPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 3 Supplier Device Package: 14-TSSOPB Input Logic Level - High: 2V ~ 4.5V Input Logic Level - Low: 0.1V ~ 36V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
на замовлення 3351 шт: термін постачання 21-31 дні (днів) |
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SSM3K376R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 4A SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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SSM3K376R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 4A SOT23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
на замовлення 47496 шт: термін постачання 21-31 дні (днів) |
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TC7QPB9306FK(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 4 X 1:1 14-VSSOPSupplier Device Package: 14-VSSOP Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Switch Circuit: 4 x 1:1 Mounting Type: Surface Mount Package / Case: 14-VFSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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TC7QPB9306FK(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 4 X 1:1 14-VSSOPMounting Type: Surface Mount Package / Case: 14-VFSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 14-VSSOP Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Switch Circuit: 4 x 1:1 |
на замовлення 1540 шт: термін постачання 21-31 дні (днів) |
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TC7WPB9306FK,LF(CT | Toshiba Semiconductor and Storage |
Description: IC BUS BAR CENTRAL 2X1:1 8-SSOPSupplier Device Package: 8-SSOP Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Bar - Central Circuit: 2 x 1:1 Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TC7WPB9306FK,LF(CT | Toshiba Semiconductor and Storage |
Description: IC BUS BAR CENTRAL 2X1:1 8-SSOPPart Status: Active Supplier Device Package: 8-SSOP Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Bar - Central Circuit: 2 x 1:1 Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
на замовлення 2866 шт: термін постачання 21-31 дні (днів) |
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TK10P60W,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 9.7A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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TK10P60W,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 9.7A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
на замовлення 2248 шт: термін постачання 21-31 дні (днів) |
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TJ90S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 90A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TJ90S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 90A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6165 шт: термін постачання 21-31 дні (днів) |
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TCR15AG25,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.5V 1.5A 6WCSPProtection Features: Current Limit, Thermal Shutdown, UVLO Voltage Dropout (Max): 0.648V @ 1.5A PSRR: 95dB ~ 60dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2.5V Supplier Device Package: 6-WCSP (1.2x0.80) Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 40 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 1.5A Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-XFBGA, WLCSP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TCR15AG25,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.5V 1.5A 6WCSPOutput Type: Fixed Package / Case: 6-XFBGA, WLCSP Packaging: Cut Tape (CT) Protection Features: Current Limit, Thermal Shutdown, UVLO Voltage Dropout (Max): 0.648V @ 1.5A PSRR: 95dB ~ 60dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2.5V Supplier Device Package: 6-WCSP (1.2x0.80) Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 40 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 1.5A Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCR15AG30,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 1.5A 6WCSP |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TCR15AG30,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 1.5A 6WCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCR15AG33,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 1.5A 6WCSPProtection Features: Current Limit, Thermal Shutdown, UVLO Voltage Dropout (Max): 0.648V @ 1.5A PSRR: 95dB ~ 60dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: 6-WCSP (1.2x0.80) Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 40 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 1.5A Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-XFBGA, WLCSP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TCR15AG33,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 1.5A 6WCSPProtection Features: Current Limit, Thermal Shutdown, UVLO Voltage Dropout (Max): 0.648V @ 1.5A PSRR: 95dB ~ 60dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: 6-WCSP (1.2x0.80) Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 40 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 1.5A Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-XFBGA, WLCSP Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCR15AG18,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.8V 1.5A 6WCSPPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-WCSP (1.2x0.80) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 95dB ~ 60dB (1kHz) Voltage Dropout (Max): 0.648V @ 1.5A Protection Features: Current Limit, Thermal Shutdown, UVLO |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TCR15AG18,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.8V 1.5A 6WCSPPackaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-WCSP (1.2x0.80) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 95dB ~ 60dB (1kHz) Voltage Dropout (Max): 0.648V @ 1.5A Protection Features: Current Limit, Thermal Shutdown, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TLP624-2(BV-TP5,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP624-2(TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TK17A65W,S5X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 900µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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TK17A65W5,S5X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 8.7A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 900µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SSM6J424TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A UF6Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): +6V, -8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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SSM6J424TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A UF6Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): +6V, -8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
на замовлення 504 шт: термін постачання 21-31 дні (днів) |
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SSM6J502NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A 6UDFNBInput Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 6-UDFNB (2x2) Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SSM6J502NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A 6UDFNBInput Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 6-UDFNB (2x2) Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 9005 шт: термін постачання 21-31 дні (днів) |
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TRS6A65F,S1Q | Toshiba Semiconductor and Storage |
Description: DIODE SIL CARBIDE 650V 6A TO220F Current - Reverse Leakage @ Vr: 30 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220F-2L Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 22pF @ 650V, 1MHz Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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TLP3553A(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 4A 0-30VPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 4 A Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 30 V On-State Resistance (Max): 50 mOhms Operating Temperature: -40°C ~ 110°C Approval Agency: CSA, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TLP3553A(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 4A 0-30VPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 4 A Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 30 V On-State Resistance (Max): 50 mOhms Operating Temperature: -40°C ~ 110°C Approval Agency: CSA, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
на замовлення 6593 шт: термін постачання 21-31 дні (днів) |
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| TRS12N65FB,S1F(S | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SIC 650V 6A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 90 µA @ 650 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6 Voltage Coupled to Current - Reverse Leakage @ Vr: 650 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP781F(D4NKODGB7F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLP5751H(D4TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOVoltage - Output Supply: 15V ~ 30V Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 50ns Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 15ns, 8ns Supplier Device Package: 6-SO Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 1A, 1A Technology: Optical Coupling Current - Peak Output: 1A Voltage - Forward (Vf) (Typ): 1.55V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP5751H(D4TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOVoltage - Output Supply: 15V ~ 30V Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 50ns Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 15ns, 8ns Supplier Device Package: 6-SO Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 1A, 1A Technology: Optical Coupling Current - Peak Output: 1A Voltage - Forward (Vf) (Typ): 1.55V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
на замовлення 575 шт: термін постачання 21-31 дні (днів) |
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TLP5751H(TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SORise / Fall Time (Typ): 15ns, 8ns Supplier Device Package: 6-SO Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 1A, 1A Technology: Optical Coupling Current - Peak Output: 1A Voltage - Forward (Vf) (Typ): 1.55V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) Voltage - Output Supply: 15V ~ 30V Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 50ns Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP5751H(TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOVoltage - Output Supply: 15V ~ 30V Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 50ns Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 15ns, 8ns Supplier Device Package: 6-SO Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 1A, 1A Technology: Optical Coupling Current - Peak Output: 1A Voltage - Forward (Vf) (Typ): 1.55V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP3106A(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 4.5A 0-30VPackaging: Tape & Reel (TR) Package / Case: 6-SOP (0.173", 4.40mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 4.5 A Approval Agency: UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 6-SOP Part Status: Active Voltage - Load: 0 V ~ 30 V On-State Resistance (Max): 30 mOhms |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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TLP3106A(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 4.5A 0-30VPackaging: Cut Tape (CT) Package / Case: 6-SOP (0.173", 4.40mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 4.5 A Approval Agency: UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 6-SOP Part Status: Active Voltage - Load: 0 V ~ 30 V On-State Resistance (Max): 30 mOhms |
на замовлення 7553 шт: термін постачання 21-31 дні (днів) |
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TLP3109A(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3A 0-100VPackaging: Tape & Reel (TR) Package / Case: 6-SOP (0.173", 4.40mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 3 A Approval Agency: UL Supplier Device Package: 6-SOP Part Status: Active Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 65 mOhms |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP3109A(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3A 0-100VPackaging: Cut Tape (CT) Package / Case: 6-SOP (0.173", 4.40mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 3 A Approval Agency: UL Supplier Device Package: 6-SOP Part Status: Active Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 65 mOhms |
на замовлення 4305 шт: термін постачання 21-31 дні (днів) |
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TLP3107A(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 4A 0-60VPackaging: Tape & Reel (TR) Package / Case: 6-SOP (0.173", 4.40mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 4 A Approval Agency: UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 6-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 40 mOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TLP3107A(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 4A 0-60VPackaging: Cut Tape (CT) Package / Case: 6-SOP (0.173", 4.40mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 4 A Approval Agency: UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 6-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 40 mOhms |
на замовлення 7329 шт: термін постачання 21-31 дні (днів) |
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TRS10A65F,S1Q | Toshiba Semiconductor and Storage |
Description: DIODE SIL CARB 650V 10A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 36pF @ 650V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCR2EF33,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 200MA SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.2V @ 150mA Protection Features: Over Current |
на замовлення 228000 шт: термін постачання 21-31 дні (днів) |
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TCR2EF33,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 200MA SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.2V @ 150mA Protection Features: Over Current |
на замовлення 228269 шт: термін постачання 21-31 дні (днів) |
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TLP293(BL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SOPackaging: Bulk Package / Case: 4-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 3023 шт: термін постачання 21-31 дні (днів) |
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TLP293(BLL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SOPackaging: Bulk Package / Case: 4-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA1313-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.5A S-MINIPower - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: S-Mini Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SA1313-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.5A S-MINIPower - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: S-Mini Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 6242 шт: термін постачання 21-31 дні (днів) |
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JDH2S02SL,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 10MA SL2Current - Reverse Leakage @ Vr: 25 µA @ 500 mV Voltage - DC Reverse (Vr) (Max): 10 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SL2 Current - Average Rectified (Io): 10mA Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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JDH2S02SL,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 10MA SL2Voltage - DC Reverse (Vr) (Max): 10 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SL2 Current - Average Rectified (Io): 10mA Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 25 µA @ 500 mV |
на замовлення 9914 шт: термін постачання 21-31 дні (днів) |
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DF6D5M4N,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 15VC 6DFN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DF6D5M4N,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 15VC 6DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DF6D6M4N,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC 6DFN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DF6D6M4N,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC 6DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC78H611FNG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 16TSSOPMotor Type - AC, DC: Brushed DC Motor Type - Stepper: Bipolar Supplier Device Package: 16-TSSOP Voltage - Load: 2.5V ~ 15V Technology: DMOS Applications: General Purpose Voltage - Supply: 2.7V ~ 5.5V Output Configuration: Half Bridge (2) Operating Temperature: -30°C ~ 85°C (TA) Interface: PWM Current - Output: 1.1A Function: Driver Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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TC78H611FNG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 16TSSOPPart Status: Active Motor Type - AC, DC: Brushed DC Motor Type - Stepper: Bipolar Supplier Device Package: 16-TSSOP Voltage - Load: 2.5V ~ 15V Technology: DMOS Applications: General Purpose Voltage - Supply: 2.7V ~ 5.5V Output Configuration: Half Bridge (2) Operating Temperature: -30°C ~ 85°C (TA) Interface: PWM Current - Output: 1.1A Function: Driver Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 1780 шт: термін постачання 21-31 дні (днів) |
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RN1710,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1710,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| 74VHC27FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 3CH 3-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC GATE NOR 3CH 3-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 6.51 грн |
| 74VHC27FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 3CH 3-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC GATE NOR 3CH 3-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
на замовлення 3351 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.34 грн |
| 15+ | 21.23 грн |
| 25+ | 19.12 грн |
| 100+ | 12.41 грн |
| 250+ | 10.45 грн |
| 500+ | 8.49 грн |
| 1000+ | 6.43 грн |
| SSM3K376R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Description: MOSFET N-CH 30V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.99 грн |
| 9000+ | 4.93 грн |
| SSM3K376R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Description: MOSFET N-CH 30V 4A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
на замовлення 47496 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.75 грн |
| 19+ | 16.57 грн |
| 50+ | 11.91 грн |
| 100+ | 9.76 грн |
| 500+ | 7.26 грн |
| TC7QPB9306FK(EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Supplier Device Package: 14-VSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 4 x 1:1
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Supplier Device Package: 14-VSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 4 x 1:1
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TC7QPB9306FK(EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 14-VSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 4 x 1:1
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 14-VSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 4 x 1:1
на замовлення 1540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.71 грн |
| 10+ | 37.49 грн |
| 25+ | 33.69 грн |
| 100+ | 27.69 грн |
| 250+ | 25.82 грн |
| 500+ | 24.69 грн |
| 1000+ | 23.99 грн |
| TC7WPB9306FK,LF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS BAR CENTRAL 2X1:1 8-SSOP
Supplier Device Package: 8-SSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Bar - Central
Circuit: 2 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Description: IC BUS BAR CENTRAL 2X1:1 8-SSOP
Supplier Device Package: 8-SSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Bar - Central
Circuit: 2 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TC7WPB9306FK,LF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS BAR CENTRAL 2X1:1 8-SSOP
Part Status: Active
Supplier Device Package: 8-SSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Bar - Central
Circuit: 2 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC BUS BAR CENTRAL 2X1:1 8-SSOP
Part Status: Active
Supplier Device Package: 8-SSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Bar - Central
Circuit: 2 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
на замовлення 2866 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.24 грн |
| 26+ | 12.14 грн |
| 29+ | 10.75 грн |
| 100+ | 8.63 грн |
| 250+ | 7.95 грн |
| 500+ | 7.54 грн |
| 1000+ | 7.08 грн |
| TK10P60W,RVQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 9.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Description: MOSFET N CH 600V 9.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TK10P60W,RVQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 9.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Description: MOSFET N CH 600V 9.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
на замовлення 2248 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 190.30 грн |
| 10+ | 117.74 грн |
| 50+ | 89.52 грн |
| 100+ | 75.46 грн |
| 500+ | 60.44 грн |
| TJ90S04M3L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 54.71 грн |
| 6000+ | 47.37 грн |
| TJ90S04M3L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6165 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 183.96 грн |
| 10+ | 113.47 грн |
| 50+ | 86.16 грн |
| 100+ | 72.57 грн |
| 500+ | 58.04 грн |
| TCR15AG25,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 1.5A 6WCSP
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 2.5V 1.5A 6WCSP
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TCR15AG25,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 1.5A 6WCSP
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Description: IC REG LINEAR 2.5V 1.5A 6WCSP
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
товару немає в наявності
В кошику
од. на суму грн.
| TCR15AG30,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 1.5A 6WCSP
Description: IC REG LINEAR 3V 1.5A 6WCSP
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TCR15AG30,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 1.5A 6WCSP
Description: IC REG LINEAR 3V 1.5A 6WCSP
товару немає в наявності
В кошику
од. на суму грн.
| TCR15AG33,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 1.5A 6WCSP
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 3.3V 1.5A 6WCSP
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TCR15AG33,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 1.5A 6WCSP
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 3.3V 1.5A 6WCSP
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TCR15AG18,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 1.5A 6WCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-WCSP (1.2x0.80)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 95dB ~ 60dB (1kHz)
Voltage Dropout (Max): 0.648V @ 1.5A
Protection Features: Current Limit, Thermal Shutdown, UVLO
Description: IC REG LINEAR 1.8V 1.5A 6WCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-WCSP (1.2x0.80)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 95dB ~ 60dB (1kHz)
Voltage Dropout (Max): 0.648V @ 1.5A
Protection Features: Current Limit, Thermal Shutdown, UVLO
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TCR15AG18,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 1.5A 6WCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-WCSP (1.2x0.80)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 95dB ~ 60dB (1kHz)
Voltage Dropout (Max): 0.648V @ 1.5A
Protection Features: Current Limit, Thermal Shutdown, UVLO
Description: IC REG LINEAR 1.8V 1.5A 6WCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-WCSP (1.2x0.80)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 95dB ~ 60dB (1kHz)
Voltage Dropout (Max): 0.648V @ 1.5A
Protection Features: Current Limit, Thermal Shutdown, UVLO
товару немає в наявності
В кошику
од. на суму грн.
| TLP624-2(BV-TP5,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP624-2(TP1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TK17A65W,S5X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 315.59 грн |
| 10+ | 200.13 грн |
| TK17A65W5,S5X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 8.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 8.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| SSM6J424TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A UF6
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 6A UF6
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSM6J424TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Description: MOSFET P-CH 20V 6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
на замовлення 504 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.27 грн |
| 11+ | 29.02 грн |
| 100+ | 19.75 грн |
| 500+ | 13.90 грн |
| SSM6J502NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.02 грн |
| 6000+ | 8.80 грн |
| 9000+ | 8.37 грн |
| SSM6J502NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 9005 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.61 грн |
| 12+ | 26.27 грн |
| 100+ | 16.75 грн |
| 500+ | 11.88 грн |
| 1000+ | 10.64 грн |
| TRS6A65F,S1Q |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 6A TO220F
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 22pF @ 650V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Description: DIODE SIL CARBIDE 650V 6A TO220F
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 22pF @ 650V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 218.85 грн |
| TLP3553A(TP1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 4 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 4A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 4 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 145.98 грн |
| 3000+ | 135.74 грн |
| 4500+ | 132.99 грн |
| TLP3553A(TP1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 4 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 4A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 4 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 6593 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.92 грн |
| 10+ | 180.89 грн |
| 25+ | 172.78 грн |
| 50+ | 156.57 грн |
| 100+ | 151.22 грн |
| 250+ | 144.40 грн |
| 500+ | 137.16 грн |
| TRS12N65FB,S1F(S |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6
Voltage Coupled to Current - Reverse Leakage @ Vr: 650
Description: DIODE ARRAY SIC 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6
Voltage Coupled to Current - Reverse Leakage @ Vr: 650
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(D4NKODGB7F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP5751H(D4TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP5751H(D4TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
на замовлення 575 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.48 грн |
| 10+ | 102.01 грн |
| 100+ | 77.91 грн |
| 500+ | 63.14 грн |
| TLP5751H(TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP5751H(TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TLP3106A(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4.5A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4.5 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 30 mOhms
Description: SSR RELAY SPST-NO 4.5A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4.5 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 30 mOhms
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 182.08 грн |
| TLP3106A(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4.5A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4.5 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 30 mOhms
Description: SSR RELAY SPST-NO 4.5A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4.5 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 30 mOhms
на замовлення 7553 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 269.60 грн |
| 10+ | 231.51 грн |
| 25+ | 221.13 грн |
| 50+ | 200.40 грн |
| 100+ | 193.53 грн |
| 250+ | 184.81 грн |
| 500+ | 175.54 грн |
| 1000+ | 169.51 грн |
| TLP3109A(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3 A
Approval Agency: UL
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 65 mOhms
Description: SSR RELAY SPST-NO 3A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3 A
Approval Agency: UL
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 65 mOhms
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLP3109A(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3 A
Approval Agency: UL
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 65 mOhms
Description: SSR RELAY SPST-NO 3A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3 A
Approval Agency: UL
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 65 mOhms
на замовлення 4305 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 287.04 грн |
| 10+ | 245.94 грн |
| 25+ | 234.90 грн |
| 50+ | 212.91 грн |
| 100+ | 205.61 грн |
| 250+ | 196.34 грн |
| 500+ | 186.49 грн |
| 1000+ | 180.08 грн |
| TLP3107A(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 40 mOhms
Description: SSR RELAY SPST-NO 4A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 40 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 126.87 грн |
| 5000+ | 118.23 грн |
| TLP3107A(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 40 mOhms
Description: SSR RELAY SPST-NO 4A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 40 mOhms
на замовлення 7329 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.97 грн |
| 10+ | 193.10 грн |
| 100+ | 152.25 грн |
| 500+ | 126.08 грн |
| 1000+ | 123.10 грн |
| TRS10A65F,S1Q |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 650V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 650V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| TCR2EF33,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
на замовлення 228000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.50 грн |
| 6000+ | 3.25 грн |
| 9000+ | 3.19 грн |
| 15000+ | 2.94 грн |
| 21000+ | 2.90 грн |
| 30000+ | 2.87 грн |
| TCR2EF33,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
на замовлення 228269 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.52 грн |
| 52+ | 5.96 грн |
| 59+ | 5.22 грн |
| 100+ | 4.16 грн |
| 250+ | 3.79 грн |
| 500+ | 3.57 грн |
| 1000+ | 3.33 грн |
| TLP293(BL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Bulk
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Bulk
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 3023 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.65 грн |
| 12+ | 26.04 грн |
| 175+ | 17.46 грн |
| 525+ | 14.43 грн |
| 1050+ | 13.44 грн |
| 2100+ | 12.59 грн |
| TLP293(BLL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Bulk
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Bulk
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1313-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 50V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.63 грн |
| 2SA1313-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 50V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 6242 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.24 грн |
| 29+ | 10.69 грн |
| 100+ | 6.67 грн |
| 500+ | 4.60 грн |
| 1000+ | 4.07 грн |
| JDH2S02SL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 10MA SL2
Current - Reverse Leakage @ Vr: 25 µA @ 500 mV
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SL2
Current - Average Rectified (Io): 10mA
Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 10V 10MA SL2
Current - Reverse Leakage @ Vr: 25 µA @ 500 mV
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SL2
Current - Average Rectified (Io): 10mA
Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| JDH2S02SL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 10MA SL2
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SL2
Current - Average Rectified (Io): 10mA
Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 25 µA @ 500 mV
Description: DIODE SCHOTTKY 10V 10MA SL2
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SL2
Current - Average Rectified (Io): 10mA
Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 25 µA @ 500 mV
на замовлення 9914 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.72 грн |
| 17+ | 18.63 грн |
| 100+ | 10.06 грн |
| 500+ | 7.74 грн |
| 1000+ | 6.45 грн |
| 2000+ | 6.06 грн |
| 5000+ | 5.57 грн |
| DF6D5M4N,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC 6DFN
Description: TVS DIODE 3.6VWM 15VC 6DFN
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DF6D5M4N,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC 6DFN
Description: TVS DIODE 3.6VWM 15VC 6DFN
товару немає в наявності
В кошику
од. на суму грн.
| DF6D6M4N,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC 6DFN
Description: TVS DIODE 5.5VWM 15VC 6DFN
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DF6D6M4N,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC 6DFN
Description: TVS DIODE 5.5VWM 15VC 6DFN
товару немає в наявності
В кошику
од. на суму грн.
| TC78H611FNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 16TSSOP
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-TSSOP
Voltage - Load: 2.5V ~ 15V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: PWM
Current - Output: 1.1A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Description: IC MOTOR DRIVER 16TSSOP
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-TSSOP
Voltage - Load: 2.5V ~ 15V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: PWM
Current - Output: 1.1A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TC78H611FNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 16TSSOP
Part Status: Active
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-TSSOP
Voltage - Load: 2.5V ~ 15V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: PWM
Current - Output: 1.1A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC MOTOR DRIVER 16TSSOP
Part Status: Active
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-TSSOP
Voltage - Load: 2.5V ~ 15V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: PWM
Current - Output: 1.1A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 1780 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.70 грн |
| 10+ | 70.86 грн |
| 25+ | 64.23 грн |
| 100+ | 53.51 грн |
| 250+ | 50.27 грн |
| 500+ | 48.32 грн |
| 1000+ | 45.95 грн |
| RN1710,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: USV
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.28 грн |
| RN1710,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: USV
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.65 грн |
| 32+ | 9.77 грн |
| 100+ | 6.07 грн |
| 500+ | 4.18 грн |
| 1000+ | 3.69 грн |

























