Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13051) > Сторінка 129 з 218
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TLP2766A(TP4,E | Toshiba Semiconductor and Storage |
Description: COUPLER HIGH SPEED LOGIC OUTPUT Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.8V (Max) Data Rate: 20MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 5ns, 4ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 10 mA |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP2710(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOCOUPLER HI SPEED LOGIC OUTPU Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.9V (Max) Data Rate: 5MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 11ns, 13ns Common Mode Transient Immunity (Min): 25kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 10 mA |
на замовлення 14064 шт: термін постачання 21-31 дні (днів) |
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TLP2710(TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOCOUPLER HI SPEED LOGIC OUTPU Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.9V (Max) Data Rate: 5MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 11ns, 13ns Common Mode Transient Immunity (Min): 25kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 10 mA |
на замовлення 5855 шт: термін постачання 21-31 дні (днів) |
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TLP2719(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOCOUPLER HI SPEED LOGIC OUTPU Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 20V Voltage - Forward (Vf) (Typ): 1.6V Data Rate: 1MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 800ns, 800ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 8 mA |
на замовлення 3791 шт: термін постачання 21-31 дні (днів) |
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TLP2719(TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOCOUPLER HI SPEED LOGIC OUTPU Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 20V Voltage - Forward (Vf) (Typ): 1.6V Data Rate: 1MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 800ns, 800ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 8 mA |
на замовлення 3419 шт: термін постачання 21-31 дні (днів) |
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TLP2766A(TP,E | Toshiba Semiconductor and Storage |
Description: COUPLER HIGH SPEED LOGIC OUTPUT Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.8V (Max) Data Rate: 20MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 5ns, 4ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Number of Channels: 1 Current - Output / Channel: 10 mA |
на замовлення 2629 шт: термін постачання 21-31 дні (днів) |
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TLP2766A(TP4,E | Toshiba Semiconductor and Storage |
Description: COUPLER HIGH SPEED LOGIC OUTPUT Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.8V (Max) Data Rate: 20MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 5ns, 4ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 10 mA |
на замовлення 2931 шт: термін постачання 21-31 дні (днів) |
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TLP2304(TPR,E | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER HIGH SPEED 5PIN Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1MBd Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 15 mA |
товар відсутній |
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TLP2304(TPR,E | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER HIGH SPEED 5PIN Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1MBd Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 15 mA |
на замовлення 2530 шт: термін постачання 21-31 дні (днів) |
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HDEPR04GEA51F | Toshiba Semiconductor and Storage |
Description: 1TB 3.5" SATAIII 5V-12V 7.2K RPM Packaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 1TB Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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HDEPR03GEA51F | Toshiba Semiconductor and Storage |
Description: 2TB 3.5" SATAIII 5V-12V 7.2K RPM Packaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 2TB Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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HDEPR01GEA51F | Toshiba Semiconductor and Storage |
Description: 4TB 3.5" SATAIII 5V-12V 7.2K RPM Packaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 4TB Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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HDEPV10GEA51F | Toshiba Semiconductor and Storage |
Description: 10TB 3.5" SATAIII 5-12V 7.2K RPM Packaging: Bulk Memory Size: 10TB Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 61 шт: термін постачання 21-31 дні (днів) |
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HDEPV11GEA51F | Toshiba Semiconductor and Storage |
Description: 8TB 3.5" SATAIII 5V-12V 7.2K RPM Packaging: Bulk Memory Size: 8TB Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 19 шт: термін постачання 21-31 дні (днів) |
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HDEPV13GEA51F | Toshiba Semiconductor and Storage |
Description: 6TB 3.5" SATAIII 5V-12V 7.2K RPM Packaging: Bulk Memory Size: 6TB Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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HDEPV20GEA51F | Toshiba Semiconductor and Storage |
Description: 10TB 3.5" SATAIII 5-12V 7.2K RPM Packaging: Bulk Memory Size: 10TB Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" Part Status: Active |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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HDEPV21GEA51F | Toshiba Semiconductor and Storage |
Description: 8TB 3.5" SATAIII 5V-12V 7.2K RPM Packaging: Bulk Memory Size: 8TB Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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HDEPV23GEA51F | Toshiba Semiconductor and Storage |
Description: 6TB 3.5" SATAIII 5V-12V 7.2K RPM Packaging: Bulk Memory Size: 6TB Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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HDEPW11GEA51F | Toshiba Semiconductor and Storage |
Description: 12TB 3.5" SATAIII 5-12V 7.2K RPM Packaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 12TB Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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HDEPW10GEA51F | Toshiba Semiconductor and Storage |
Description: HDD 14TB 3.5" SATA III 5V-12V Packaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 14TB Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" Part Status: Active |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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HDEPW21GEA51F | Toshiba Semiconductor and Storage |
Description: 12TB 3.5" SATAIII 5-12V 7.2K RPM Packaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 12TB Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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HDEPW20GEA51F | Toshiba Semiconductor and Storage |
Description: 14TB 3.5" SATAIII 5-12V 7.2K RPM Packaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 14TB Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" Part Status: Active |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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TDTA114Y,LM | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
товар відсутній |
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TDTC114E,LM | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
товар відсутній |
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TCS30DLU,LF | Toshiba Semiconductor and Storage |
Description: MAGNETIC SWITCH OMNIPOLAR UFV Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Flat Lead Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Technology: Hall Effect Sensing Range: ±2.5mT Trip, ±0.3mT Release Current - Output (Max): 5mA Current - Supply (Max): 1.3mA Supplier Device Package: UFV Test Condition: 25°C |
товар відсутній |
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SSM6P15FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 30V 0.1A US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: US6 Part Status: Active |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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TCR3DF105,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.05V 300MA SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.05V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.77V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TCR3DF17,LM(CT | Toshiba Semiconductor and Storage | Description: 300MA LDO VOUT=1.7V DROPOUT=230M |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TCR3DF185,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.85V 300MA SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.85V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.4V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
товар відсутній |
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TCR3DF19,LM(CT | Toshiba Semiconductor and Storage | Description: 300MA LDO VOUT=1.9V DROPOUT=230M |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TCR3DF27,LM(CT | Toshiba Semiconductor and Storage | Description: 300MA LDO VOUT=2.7V DROPOUT=230M |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TCR3DF275,LM(CT | Toshiba Semiconductor and Storage | Description: 300MA LDO VOUT=2.75V DROPOUT=230 |
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TCR3DG35,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.5V 300MA 4WCSPE Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 3.5V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.215V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
товар відсутній |
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TCR3DG45,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 4.5V 300MA 4WCSPE Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 125 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 4.5V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.185V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
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TCR5BM10,L3F | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1V 500MA 5DFNB Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 36 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 5-DFNB (1.2x1.2) Voltage - Output (Min/Fixed): 1V Control Features: Enable Part Status: Active PSRR: 98dB (1kHz) Voltage Dropout (Max): 0.135V @ 500mA Protection Features: Over Current, Over Temperature |
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MT3S111TU,LF | Toshiba Semiconductor and Storage |
Description: RF SIGE NPN BIPOLAR TRANSISTOR N Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12.5dB Power - Max: 800mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz Supplier Device Package: UFM Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SSM3J09FU,LF | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 30V 200MA USM |
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SSM3J15F,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA S-MINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: S-Mini Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSM3J340R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 4A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SSM3J36TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 330MA UFM Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSM6J412TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 4A UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSM3K35CT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 180MA CST3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SSM3K36TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 500MA UFM Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TDTA114Y,LM | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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TDTC114E,LM | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
товар відсутній |
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TCS30DLU,LF | Toshiba Semiconductor and Storage |
Description: MAGNETIC SWITCH OMNIPOLAR UFV Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Flat Lead Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Technology: Hall Effect Sensing Range: ±2.5mT Trip, ±0.3mT Release Current - Output (Max): 5mA Current - Supply (Max): 1.3mA Supplier Device Package: UFV Test Condition: 25°C |
на замовлення 2919 шт: термін постачання 21-31 дні (днів) |
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SSM6N44FU,LF | Toshiba Semiconductor and Storage |
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: US6 Part Status: Active |
на замовлення 14471 шт: термін постачання 21-31 дні (днів) |
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SSM6P15FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 30V 0.1A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: US6 Part Status: Active |
на замовлення 34384 шт: термін постачання 21-31 дні (днів) |
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TCR3DF105,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.05V 300MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.05V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.77V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
на замовлення 5860 шт: термін постачання 21-31 дні (днів) |
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TCR3DF17,LM(CT | Toshiba Semiconductor and Storage | Description: 300MA LDO VOUT=1.7V DROPOUT=230M |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TCR3DF185,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.85V 300MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.85V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.4V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
товар відсутній |
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TCR3DF19,LM(CT | Toshiba Semiconductor and Storage | Description: 300MA LDO VOUT=1.9V DROPOUT=230M |
на замовлення 4923 шт: термін постачання 21-31 дні (днів) |
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TCR3DF27,LM(CT | Toshiba Semiconductor and Storage | Description: 300MA LDO VOUT=2.7V DROPOUT=230M |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TCR3DF275,LM(CT | Toshiba Semiconductor and Storage | Description: 300MA LDO VOUT=2.75V DROPOUT=230 |
товар відсутній |
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TCR3DG35,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.5V 300MA 4WCSPE Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 3.5V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.215V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
товар відсутній |
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TCR3DG45,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 4.5V 300MA 4WCSPE Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 125 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 4.5V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.185V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
товар відсутній |
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TCR5BM10,L3F | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1V 500MA 5DFNB Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 36 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 5-DFNB (1.2x1.2) Voltage - Output (Min/Fixed): 1V Control Features: Enable Part Status: Active PSRR: 98dB (1kHz) Voltage Dropout (Max): 0.135V @ 500mA Protection Features: Over Current, Over Temperature |
на замовлення 1855 шт: термін постачання 21-31 дні (днів) |
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MT3S111TU,LF | Toshiba Semiconductor and Storage |
Description: RF SIGE NPN BIPOLAR TRANSISTOR N Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12.5dB Power - Max: 800mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz Supplier Device Package: UFM Part Status: Active |
на замовлення 14664 шт: термін постачання 21-31 дні (днів) |
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SSM3J09FU,LF | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 30V 200MA USM |
на замовлення 5360 шт: термін постачання 21-31 дні (днів) |
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SSM3J15F,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA S-MINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: S-Mini Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V |
на замовлення 10945 шт: термін постачання 21-31 дні (днів) |
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TLP2766A(TP4,E |
Виробник: Toshiba Semiconductor and Storage
Description: COUPLER HIGH SPEED LOGIC OUTPUT
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.8V (Max)
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: COUPLER HIGH SPEED LOGIC OUTPUT
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.8V (Max)
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 38.47 грн |
TLP2710(TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER HI SPEED LOGIC OUTPU
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: OPTOCOUPLER HI SPEED LOGIC OUTPU
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 14064 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 105.63 грн |
10+ | 64.49 грн |
100+ | 47.7 грн |
500+ | 41.13 грн |
TLP2710(TP4,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER HI SPEED LOGIC OUTPU
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: OPTOCOUPLER HI SPEED LOGIC OUTPU
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 5855 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 104.19 грн |
10+ | 63.59 грн |
100+ | 47.04 грн |
500+ | 40.56 грн |
TLP2719(TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER HI SPEED LOGIC OUTPU
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
Description: OPTOCOUPLER HI SPEED LOGIC OUTPU
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
на замовлення 3791 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 115.69 грн |
10+ | 70.37 грн |
100+ | 52.05 грн |
500+ | 44.89 грн |
TLP2719(TP4,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER HI SPEED LOGIC OUTPU
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
Description: OPTOCOUPLER HI SPEED LOGIC OUTPU
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
на замовлення 3419 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 112.81 грн |
10+ | 68.71 грн |
100+ | 50.82 грн |
500+ | 43.82 грн |
TLP2766A(TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: COUPLER HIGH SPEED LOGIC OUTPUT
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.8V (Max)
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: COUPLER HIGH SPEED LOGIC OUTPUT
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.8V (Max)
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 2629 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 110.66 грн |
10+ | 67.05 грн |
100+ | 49.63 грн |
500+ | 42.8 грн |
TLP2766A(TP4,E |
Виробник: Toshiba Semiconductor and Storage
Description: COUPLER HIGH SPEED LOGIC OUTPUT
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.8V (Max)
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: COUPLER HIGH SPEED LOGIC OUTPUT
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.8V (Max)
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 2931 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 108.5 грн |
10+ | 66.15 грн |
100+ | 48.95 грн |
500+ | 42.21 грн |
TLP2304(TPR,E |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER HIGH SPEED 5PIN
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER HIGH SPEED 5PIN
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 15 mA
товар відсутній
TLP2304(TPR,E |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER HIGH SPEED 5PIN
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER HIGH SPEED 5PIN
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 15 mA
на замовлення 2530 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 91.26 грн |
10+ | 55.98 грн |
100+ | 41.43 грн |
500+ | 35.72 грн |
1000+ | 29.42 грн |
HDEPR04GEA51F |
Виробник: Toshiba Semiconductor and Storage
Description: 1TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 1TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: 1TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 1TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 14 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 8142.59 грн |
10+ | 7317.98 грн |
HDEPR03GEA51F |
Виробник: Toshiba Semiconductor and Storage
Description: 2TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 2TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: 2TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 2TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 34 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 10320.51 грн |
10+ | 9583.03 грн |
25+ | 9441.07 грн |
HDEPR01GEA51F |
Виробник: Toshiba Semiconductor and Storage
Description: 4TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: 4TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 13010.04 грн |
10+ | 12080.64 грн |
HDEPV10GEA51F |
Виробник: Toshiba Semiconductor and Storage
Description: 10TB 3.5" SATAIII 5-12V 7.2K RPM
Packaging: Bulk
Memory Size: 10TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: 10TB 3.5" SATAIII 5-12V 7.2K RPM
Packaging: Bulk
Memory Size: 10TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 61 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 22441.7 грн |
10+ | 20838.81 грн |
25+ | 20530.11 грн |
HDEPV11GEA51F |
Виробник: Toshiba Semiconductor and Storage
Description: 8TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 8TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: 8TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 8TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 19 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 17659.76 грн |
10+ | 16398.39 грн |
HDEPV13GEA51F |
Виробник: Toshiba Semiconductor and Storage
Description: 6TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 6TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: 6TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 6TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 15761.36 грн |
10+ | 14635.89 грн |
HDEPV20GEA51F |
Виробник: Toshiba Semiconductor and Storage
Description: 10TB 3.5" SATAIII 5-12V 7.2K RPM
Packaging: Bulk
Memory Size: 10TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
Description: 10TB 3.5" SATAIII 5-12V 7.2K RPM
Packaging: Bulk
Memory Size: 10TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
на замовлення 70 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 20873.83 грн |
10+ | 19383.4 грн |
25+ | 19096.17 грн |
HDEPV21GEA51F |
Виробник: Toshiba Semiconductor and Storage
Description: 8TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 8TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: 8TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 8TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 17659.76 грн |
10+ | 16398.39 грн |
HDEPV23GEA51F |
Виробник: Toshiba Semiconductor and Storage
Description: 6TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 6TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: 6TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 6TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 19701.88 грн |
10+ | 18294.91 грн |
HDEPW11GEA51F |
Виробник: Toshiba Semiconductor and Storage
Description: 12TB 3.5" SATAIII 5-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: 12TB 3.5" SATAIII 5-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 54 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 23974.37 грн |
20+ | 22744.4 грн |
HDEPW10GEA51F |
Виробник: Toshiba Semiconductor and Storage
Description: HDD 14TB 3.5" SATA III 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 14TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
Description: HDD 14TB 3.5" SATA III 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 14TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
на замовлення 70 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 28045.66 грн |
10+ | 26606.65 грн |
HDEPW21GEA51F |
Виробник: Toshiba Semiconductor and Storage
Description: 12TB 3.5" SATAIII 5-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: 12TB 3.5" SATAIII 5-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 60 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 23974.37 грн |
20+ | 22744.4 грн |
HDEPW20GEA51F |
Виробник: Toshiba Semiconductor and Storage
Description: 14TB 3.5" SATAIII 5-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 14TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
Description: 14TB 3.5" SATAIII 5-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 14TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
на замовлення 30 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 28045.66 грн |
20+ | 26606.65 грн |
TDTA114Y,LM |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
TDTC114E,LM |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
TCS30DLU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±2.5mT Trip, ±0.3mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.3mA
Supplier Device Package: UFV
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±2.5mT Trip, ±0.3mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.3mA
Supplier Device Package: UFV
Test Condition: 25°C
товар відсутній
SSM6P15FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET 2P-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: US6
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.53 грн |
6000+ | 4.17 грн |
9000+ | 3.61 грн |
30000+ | 3.32 грн |
TCR3DF105,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.77V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 1.05V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.77V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.98 грн |
TCR3DF17,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=1.7V DROPOUT=230M
Description: 300MA LDO VOUT=1.7V DROPOUT=230M
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)TCR3DF185,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.85V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 1.85V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
товар відсутній
TCR3DF19,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=1.9V DROPOUT=230M
Description: 300MA LDO VOUT=1.9V DROPOUT=230M
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.25 грн |
TCR3DF27,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=2.7V DROPOUT=230M
Description: 300MA LDO VOUT=2.7V DROPOUT=230M
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)TCR3DF275,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=2.75V DROPOUT=230
Description: 300MA LDO VOUT=2.75V DROPOUT=230
товар відсутній
TCR3DG35,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.5V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.215V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 3.5V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.215V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
товар відсутній
TCR3DG45,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.185V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 4.5V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.185V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
товар відсутній
TCR5BM10,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 500MA 5DFNB
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.135V @ 500mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1V 500MA 5DFNB
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.135V @ 500mA
Protection Features: Over Current, Over Temperature
товар відсутній
MT3S111TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: RF SIGE NPN BIPOLAR TRANSISTOR N
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Supplier Device Package: UFM
Part Status: Active
Description: RF SIGE NPN BIPOLAR TRANSISTOR N
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Supplier Device Package: UFM
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 15.79 грн |
6000+ | 14.45 грн |
SSM3J09FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 200MA USM
Description: MOSFET P-CH 30V 200MA USM
товар відсутній
SSM3J15F,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Description: MOSFET P-CH 30V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.49 грн |
6000+ | 2.23 грн |
SSM3J340R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
Description: MOSFET P-CH 30V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.36 грн |
6000+ | 4.93 грн |
9000+ | 4.27 грн |
SSM3J36TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 330MA UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Description: MOSFET P-CH 20V 330MA UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.63 грн |
6000+ | 4.27 грн |
SSM6J412TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: MOSFET P-CH 20V 4A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.46 грн |
SSM3K35CT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 180MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
Description: MOSFET N-CH 20V 180MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 2.62 грн |
SSM3K36TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Description: MOSFET N-CH 20V 500MA UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.1 грн |
TDTA114Y,LM |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.5 грн |
35+ | 7.96 грн |
100+ | 4.26 грн |
500+ | 3.14 грн |
1000+ | 2.18 грн |
TDTC114E,LM |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
TCS30DLU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±2.5mT Trip, ±0.3mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.3mA
Supplier Device Package: UFV
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±2.5mT Trip, ±0.3mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.3mA
Supplier Device Package: UFV
Test Condition: 25°C
на замовлення 2919 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.49 грн |
11+ | 25.39 грн |
25+ | 21.87 грн |
50+ | 19.79 грн |
100+ | 16.86 грн |
500+ | 14.66 грн |
1000+ | 12.61 грн |
SSM6N44FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
на замовлення 14471 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.15 грн |
17+ | 16.81 грн |
100+ | 8.5 грн |
500+ | 6.51 грн |
1000+ | 4.83 грн |
SSM6P15FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET 2P-CH 30V 0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: US6
Part Status: Active
на замовлення 34384 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.15 грн |
17+ | 16.95 грн |
100+ | 8.57 грн |
500+ | 6.56 грн |
1000+ | 4.86 грн |
TCR3DF105,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.77V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 1.05V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.77V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
на замовлення 5860 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 32.33 грн |
13+ | 23.04 грн |
25+ | 20.15 грн |
100+ | 12.24 грн |
250+ | 10.13 грн |
500+ | 8.11 грн |
1000+ | 6.11 грн |
TCR3DF17,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=1.7V DROPOUT=230M
Description: 300MA LDO VOUT=1.7V DROPOUT=230M
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)TCR3DF185,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.85V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 1.85V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
товар відсутній
TCR3DF19,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=1.9V DROPOUT=230M
Description: 300MA LDO VOUT=1.9V DROPOUT=230M
на замовлення 4923 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.77 грн |
12+ | 24.08 грн |
25+ | 21.06 грн |
100+ | 12.8 грн |
250+ | 10.59 грн |
500+ | 8.48 грн |
1000+ | 6.39 грн |
TCR3DF27,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=2.7V DROPOUT=230M
Description: 300MA LDO VOUT=2.7V DROPOUT=230M
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)TCR3DF275,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=2.75V DROPOUT=230
Description: 300MA LDO VOUT=2.75V DROPOUT=230
товар відсутній
TCR3DG35,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.5V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.215V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 3.5V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.215V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
товар відсутній
TCR3DG45,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.185V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 4.5V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.185V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
товар відсутній
TCR5BM10,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 500MA 5DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.135V @ 500mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1V 500MA 5DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.135V @ 500mA
Protection Features: Over Current, Over Temperature
на замовлення 1855 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.49 грн |
11+ | 26.92 грн |
25+ | 24.63 грн |
100+ | 17.21 грн |
250+ | 15.59 грн |
500+ | 12.91 грн |
1000+ | 9.52 грн |
MT3S111TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: RF SIGE NPN BIPOLAR TRANSISTOR N
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Supplier Device Package: UFM
Part Status: Active
Description: RF SIGE NPN BIPOLAR TRANSISTOR N
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Supplier Device Package: UFM
Part Status: Active
на замовлення 14664 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 39.52 грн |
10+ | 33.7 грн |
25+ | 30.42 грн |
100+ | 24.97 грн |
250+ | 21.92 грн |
500+ | 19.37 грн |
1000+ | 15.04 грн |
SSM3J09FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 200MA USM
Description: MOSFET P-CH 30V 200MA USM
на замовлення 5360 шт:
термін постачання 21-31 дні (днів)SSM3J15F,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Description: MOSFET P-CH 30V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
на замовлення 10945 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.09 грн |
29+ | 9.83 грн |
100+ | 4.77 грн |
500+ | 3.74 грн |
1000+ | 2.6 грн |