Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13583) > Сторінка 40 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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TB62218AFG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 28HSOP |
на замовлення 2971 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62218AFG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 28HSOP |
на замовлення 2971 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62218AFNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP |
на замовлення 741 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB6552FTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 2.7V-5.5V 16WQFNPackaging: Cut Tape (CT) Package / Case: 16-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: PWM, Serial Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 2.5V ~ 13.5V Supplier Device Package: 16-WQFN (3x3) Motor Type - AC, DC: Brushed DC |
на замовлення 667 шт: термін постачання 21-31 дні (днів) |
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TB6614FNG,C,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB6617FNG(O,EL) | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB6569FG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 10V-45V 16HSOPPackaging: Cut Tape (CT) Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 4A Interface: Parallel, PWM Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 10V ~ 45V Applications: General Purpose Technology: Bi-CMOS Voltage - Load: 10V ~ 45V Supplier Device Package: 16-HSOP Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 2561 шт: термін постачання 21-31 дні (днів) |
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TB6642FG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 10V-45V 16HSOPPackaging: Cut Tape (CT) Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Interface: Parallel, PWM Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 10V ~ 45V Applications: General Purpose Technology: Bi-CMOS Voltage - Load: 10V ~ 45V Supplier Device Package: 16-HSOP Motor Type - AC, DC: Brushed DC Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB62208FTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 3888 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62208FTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 3888 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62213AFG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 28HSOPPackaging: Cut Tape (CT) Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.4A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 28-HSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB62213AFTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 1985 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62213AFTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 1985 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62214AFTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 3372 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62214AFTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 3372 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62215AFTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62215AFTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62216FTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB62216FTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB62218AFTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 2823 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62218AFTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 2823 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
| TB6575FNG(O,C,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR CONTROLLER PAR 24SSOP |
на замовлення 4997 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
| TB6575FNG(O,C,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR CONTROLLER PAR 24SSOP |
на замовлення 4997 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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TB62208FG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB62208FNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48HTSSOP |
на замовлення 780 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62208FNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48HTSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB62212FNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP |
на замовлення 453 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62212FTAG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (8) Voltage - Supply: 4.5V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 48-QFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 6159 шт: термін постачання 21-31 дні (днів) |
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TB62213AFNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48HTSSOP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62213AFNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48HTSSOP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62214AFG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 28HSOPPackaging: Cut Tape (CT) Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: DMOS Voltage - Load: 10V ~ 38V Supplier Device Package: 28-HSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB62214AFNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOPPackaging: Cut Tape (CT) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: DMOS Voltage - Load: 10V ~ 38V Supplier Device Package: 48-HTSSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 Part Status: Active |
на замовлення 3032 шт: термін постачання 21-31 дні (днів) |
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TB62215AFG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 28HSOP |
на замовлення 1528 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62215AFG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 28HSOP |
на замовлення 1528 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62215AFNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48HTSSOP |
на замовлення 983 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62215AFNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48HTSSOP |
на замовлення 983 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62216FG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 28HSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB62216FG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 28HSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7SZU04FUTF | Toshiba Semiconductor and Storage |
Description: IC INV 1-CIR 1-IN 5-SSOP Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Current - Output High, Low: 16mA, 16mA Number of Inputs: 1 Supplier Device Package: 5-SSOP Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TC74LVX373FW | Toshiba Semiconductor and Storage |
Description: IC LATCH OCTAL D-TYPE 20-SOL |
на замовлення 2360 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | ||||||||||||||
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TK10A60W,S4VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 9.7A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
на замовлення 94 шт: термін постачання 21-31 дні (днів) |
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TK16A60W,S4VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 15.8A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 790µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TK56E12N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 120V 56A TO-220 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||
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TK72E12N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 120V 72A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Ta) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V |
на замовлення 41 шт: термін постачання 21-31 дні (днів) |
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TPH1400ANH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 24A 8-SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V Power Dissipation (Max): 1.6W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TPH8R80ANH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 32A 8-SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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TPN22006NH,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 9A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V Power Dissipation (Max): 700mW (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TPN30008NH,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 9.6A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V Power Dissipation (Max): 700mW (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TPN3300ANH,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 9.4A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V Power Dissipation (Max): 700mW (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TPH1400ANH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 24A 8-SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V Power Dissipation (Max): 1.6W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V |
на замовлення 14556 шт: термін постачання 21-31 дні (днів) |
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TPH8R80ANH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 32A 8-SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V |
на замовлення 29260 шт: термін постачання 21-31 дні (днів) |
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TPN22006NH,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 9A 8TSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V Power Dissipation (Max): 700mW (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30 |
на замовлення 5722 шт: термін постачання 21-31 дні (днів) |
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TPN30008NH,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 9.6A 8TSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V Power Dissipation (Max): 700mW (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V |
на замовлення 115 шт: термін постачання 21-31 дні (днів) |
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TPN3300ANH,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 9.4A 8TSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V Power Dissipation (Max): 700mW (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V |
на замовлення 3939 шт: термін постачання 21-31 дні (днів) |
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TK42E12N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 120V 88A TO-220 |
товару немає в наявності |
Мінімальне замовлення: 150 шт В кошику од. на суму грн. | ||||||||||||||
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TK6A60W,S4VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 6.2A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 3.1A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 310µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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TPN2R503NC,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 40A 8TSON-ADV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TPN2R503NC,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 40A 8TSON-ADV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TK31J60W5,S1VQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 30.8A TO3P |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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TK39J60W,S1VQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 38.8A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1.9mA Supplier Device Package: TO-3P(N) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| TB62218AFG,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Description: IC MOTOR DRIVER PAR 28HSOP
на замовлення 2971 шт:
термін постачання 21-31 дні (днів)
| TB62218AFG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Description: IC MOTOR DRIVER PAR 28HSOP
на замовлення 2971 шт:
термін постачання 21-31 дні (днів)
| TB62218AFNG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
на замовлення 741 шт:
термін постачання 21-31 дні (днів)
| TB6552FTG,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 2.7V-5.5V 16WQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: PWM, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 13.5V
Supplier Device Package: 16-WQFN (3x3)
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 2.7V-5.5V 16WQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: PWM, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 13.5V
Supplier Device Package: 16-WQFN (3x3)
Motor Type - AC, DC: Brushed DC
на замовлення 667 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.47 грн |
| 10+ | 62.84 грн |
| 25+ | 56.98 грн |
| 100+ | 47.34 грн |
| 250+ | 44.42 грн |
| 500+ | 42.65 грн |
| TB6614FNG,C,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP
товару немає в наявності
В кошику
од. на суму грн.
| TB6617FNG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP
товару немає в наявності
В кошику
од. на суму грн.
| TB6569FG,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 10V-45V 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 16-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 10V-45V 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 16-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 2561 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.21 грн |
| 10+ | 115.28 грн |
| 25+ | 105.29 грн |
| 100+ | 88.50 грн |
| 250+ | 83.58 грн |
| 500+ | 80.61 грн |
| TB6642FG,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 10V-45V 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 16-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 10V-45V 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 16-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| TB62208FTG,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 3888 шт:
термін постачання 21-31 дні (днів)
| TB62208FTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 3888 шт:
термін постачання 21-31 дні (днів)
| TB62213AFG,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товару немає в наявності
В кошику
од. на суму грн.
| TB62213AFTG,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 1985 шт:
термін постачання 21-31 дні (днів)
| TB62213AFTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 1985 шт:
термін постачання 21-31 дні (днів)
| TB62214AFTG,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 3372 шт:
термін постачання 21-31 дні (днів)
| TB62214AFTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 3372 шт:
термін постачання 21-31 дні (днів)
| TB62215AFTG,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)
| TB62215AFTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)
| TB62216FTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
товару немає в наявності
В кошику
од. на суму грн.
| TB62216FTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
товару немає в наявності
В кошику
од. на суму грн.
| TB62218AFTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 2823 шт:
термін постачання 21-31 дні (днів)
| TB62218AFTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 2823 шт:
термін постачання 21-31 дні (днів)
| TB6575FNG(O,C,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR CONTROLLER PAR 24SSOP
Description: IC MOTOR CONTROLLER PAR 24SSOP
на замовлення 4997 шт:
термін постачання 21-31 дні (днів)
| TB6575FNG(O,C,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR CONTROLLER PAR 24SSOP
Description: IC MOTOR CONTROLLER PAR 24SSOP
на замовлення 4997 шт:
термін постачання 21-31 дні (днів)
| TB62208FG,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP
Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP
товару немає в наявності
В кошику
од. на суму грн.
| TB62208FNG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
| TB62208FNG,C8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
товару немає в наявності
В кошику
од. на суму грн.
| TB62212FNG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
на замовлення 453 шт:
термін постачання 21-31 дні (днів)
| TB62212FTAG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 6159 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 201.31 грн |
| 10+ | 174.40 грн |
| 25+ | 164.56 грн |
| 100+ | 131.57 грн |
| 250+ | 123.55 грн |
| 500+ | 108.10 грн |
| 1000+ | 88.10 грн |
| TB62213AFNG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| TB62213AFNG,C8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| TB62214AFG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товару немає в наявності
В кошику
од. на суму грн.
| TB62214AFNG,C8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
на замовлення 3032 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.60 грн |
| 10+ | 190.59 грн |
| 25+ | 179.78 грн |
| 100+ | 143.75 грн |
| 250+ | 134.98 грн |
| 500+ | 118.10 грн |
| TB62215AFG,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Description: IC MOTOR DRIVER PAR 28HSOP
на замовлення 1528 шт:
термін постачання 21-31 дні (днів)
| TB62215AFG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Description: IC MOTOR DRIVER PAR 28HSOP
на замовлення 1528 шт:
термін постачання 21-31 дні (днів)
| TB62215AFNG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
на замовлення 983 шт:
термін постачання 21-31 дні (днів)
| TB62215AFNG,C8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
на замовлення 983 шт:
термін постачання 21-31 дні (днів)
| TB62216FG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Description: IC MOTOR DRIVER PAR 28HSOP
товару немає в наявності
В кошику
од. на суму грн.
| TB62216FG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Description: IC MOTOR DRIVER PAR 28HSOP
товару немає в наявності
В кошику
од. на суму грн.
| TC7SZU04FUTF |
Виробник: Toshiba Semiconductor and Storage
Description: IC INV 1-CIR 1-IN 5-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 16mA, 16mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INV 1-CIR 1-IN 5-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 16mA, 16mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TC74LVX373FW |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20-SOL
Description: IC LATCH OCTAL D-TYPE 20-SOL
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)
| TK10A60W,S4VX |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
на замовлення 94 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.91 грн |
| 10+ | 139.71 грн |
| 50+ | 107.19 грн |
| TK16A60W,S4VX |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: MOSFET N-CH 600V 15.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| TK56E12N1,S1X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 56A TO-220
Description: MOSFET N CH 120V 56A TO-220
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| TK72E12N1,S1X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 72A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V
Description: MOSFET N CH 120V 72A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 245.28 грн |
| TPH1400ANH,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 32.65 грн |
| TPH8R80ANH,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 52.58 грн |
| TPN22006NH,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 29.84 грн |
| TPN30008NH,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 9.6A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
Description: MOSFET N-CH 80V 9.6A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TPN3300ANH,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.20 грн |
| TPH1400ANH,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
на замовлення 14556 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.50 грн |
| 10+ | 77.69 грн |
| 50+ | 58.35 грн |
| 100+ | 48.90 грн |
| 500+ | 38.61 грн |
| TPH8R80ANH,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
на замовлення 29260 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.18 грн |
| 10+ | 97.52 грн |
| 100+ | 69.20 грн |
| 500+ | 55.20 грн |
| 1000+ | 49.94 грн |
| 2000+ | 48.68 грн |
| TPN22006NH,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
на замовлення 5722 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.16 грн |
| 10+ | 59.20 грн |
| 100+ | 45.55 грн |
| 500+ | 33.80 грн |
| 1000+ | 30.64 грн |
| TPN30008NH,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 9.6A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
Description: MOSFET N-CH 80V 9.6A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.82 грн |
| 10+ | 44.86 грн |
| 50+ | 33.10 грн |
| 100+ | 27.50 грн |
| TPN3300ANH,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
на замовлення 3939 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.05 грн |
| 10+ | 44.34 грн |
| 50+ | 32.73 грн |
| 100+ | 27.18 грн |
| 500+ | 20.98 грн |
| TK42E12N1,S1X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 88A TO-220
Description: MOSFET N CH 120V 88A TO-220
товару немає в наявності
Мінімальне замовлення: 150 шт
В кошику
од. на суму грн.
| TK6A60W,S4VX |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6.2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Description: MOSFET N-CH 600V 6.2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 189.74 грн |
| TPN2R503NC,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 40A 8TSON-ADV
Description: MOSFET N CH 30V 40A 8TSON-ADV
товару немає в наявності
В кошику
од. на суму грн.
| TPN2R503NC,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 40A 8TSON-ADV
Description: MOSFET N CH 30V 40A 8TSON-ADV
товару немає в наявності
В кошику
од. на суму грн.
| TK31J60W5,S1VQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO3P
Description: MOSFET N-CH 600V 30.8A TO3P
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 750.49 грн |
| TK39J60W,S1VQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 812.97 грн |





















