Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Сторінка 40 з 217
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DF2B6.8M1ACT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 20VC CST2 Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 50W Power Line Protection: No Part Status: Active |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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TC7LX1104WBG(LC,AH | Toshiba Semiconductor and Storage | Description: IC TRANSLTR BIDIRECTIONAL 12WCSP |
товар відсутній |
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DF2B6.8M2SC(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM 13VC SC2 |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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TC7LX1108WBG(LC,AH | Toshiba Semiconductor and Storage | Description: IC TRANSLTR BIDIRECTIONAL 16QFN |
товар відсутній |
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DF2S6.8SC(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM SC2 |
товар відсутній |
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TC7USB31FK(TE85L,F | Toshiba Semiconductor and Storage | Description: DUAL SPST USB SWITCH US8 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DF2S6.8UCT(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC CST2 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TC7WB126FK(TE85L,F | Toshiba Semiconductor and Storage | Description: DUAL BUS SWITCH US8 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DSF01S30SC(TPL3) | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 100MA SC2 |
товар відсутній |
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TC7WBD125AFKT5LF | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 1 X 1:1 US8 Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 8-SSOP |
товар відсутній |
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DSR01S30SC(TPL3) | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 100MA SC2 |
товар відсутній |
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SSM3J332R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 6A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
на замовлення 132000 шт: термін постачання 21-31 дні (днів) |
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SSM3K15ACT(TPL3) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 100MA CST3 |
товар відсутній |
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SSM3K15AFS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA SSM Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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SSM3K329R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 3.5A 2-3Z1A Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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SSM3K333R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 6A 2-3Z1A Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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SSM6J502NU,LF(T | Toshiba Semiconductor and Storage | Description: MOSFET P CH 20V 6A 2-2AA1A |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSM6J503NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A 6UDFNB Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
товар відсутній |
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SSM6N15AFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.1A US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: US6 Part Status: Active |
товар відсутній |
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1SS393SU,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTTKY 40V USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-70 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
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CES388,L3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 100MA ESC |
на замовлення 14091 шт: термін постачання 21-31 дні (днів) |
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SSM3J332R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 6A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
на замовлення 136809 шт: термін постачання 21-31 дні (днів) |
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SSM6P47NU,LF(T | Toshiba Semiconductor and Storage | Description: MOSFET 2P-CH 20V 4A 2-2Y1A |
на замовлення 5649 шт: термін постачання 21-31 дні (днів) |
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TC7LX1104WBG(LC,AH | Toshiba Semiconductor and Storage | Description: IC TRANSLTR BIDIRECTIONAL 12WCSP |
товар відсутній |
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SSM3K333R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 6A 2-3Z1A Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V |
на замовлення 58589 шт: термін постачання 21-31 дні (днів) |
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TC7LX1108WBG(LC,AH | Toshiba Semiconductor and Storage | Description: IC TRANSLTR BIDIRECTIONAL 16QFN |
товар відсутній |
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DF2B6.8M2SC(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM 13VC SC2 |
на замовлення 10051 шт: термін постачання 21-31 дні (днів) |
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DF2S6.8SC(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM SC2 |
товар відсутній |
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TC7USB31FK(TE85L,F | Toshiba Semiconductor and Storage | Description: DUAL SPST USB SWITCH US8 |
на замовлення 8674 шт: термін постачання 21-31 дні (днів) |
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SSM6J502NU,LF(T | Toshiba Semiconductor and Storage | Description: MOSFET P CH 20V 6A 2-2AA1A |
на замовлення 5968 шт: термін постачання 21-31 дні (днів) |
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SSM6J503NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
на замовлення 2710 шт: термін постачання 21-31 дні (днів) |
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DF2S6.8UCT(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC CST2 |
на замовлення 16428 шт: термін постачання 21-31 дні (днів) |
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TC7WB126FK(TE85L,F | Toshiba Semiconductor and Storage | Description: DUAL BUS SWITCH US8 |
на замовлення 3501 шт: термін постачання 21-31 дні (днів) |
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DF2S6.8UCT(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC CST2 |
на замовлення 16428 шт: термін постачання 21-31 дні (днів) |
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SSM6N15AFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.1A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: US6 Part Status: Active |
на замовлення 1024 шт: термін постачання 21-31 дні (днів) |
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TC7WBD125AFKT5LF | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 1 X 1:1 US8 Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 8-SSOP |
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DSF01S30SC(TPL3) | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 100MA SC2 |
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DSR01S30SC(TPL3) | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 100MA SC2 |
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SSM6N37FE,LM(T | Toshiba Semiconductor and Storage | Description: MOSFET 2N-CH 20V 0.25A 2-2N1D |
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SSM6N37FE,LM(T | Toshiba Semiconductor and Storage | Description: MOSFET 2N-CH 20V 0.25A 2-2N1D |
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SSM6N48FU,RF | Toshiba Semiconductor and Storage | Description: MOSFET 2N-CH 30V 0.1A 2-2J1C |
товар відсутній |
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SSM6N48FU,RF | Toshiba Semiconductor and Storage | Description: MOSFET 2N-CH 30V 0.1A 2-2J1C |
товар відсутній |
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CES520,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 200MA ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 17pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 30 V |
на замовлення 14805 шт: термін постачання 21-31 дні (днів) |
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SSM3K15ACT(TPL3) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 100MA CST3 |
товар відсутній |
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SSM6P47NU,LF(T | Toshiba Semiconductor and Storage | Description: MOSFET 2P-CH 20V 4A 2-2Y1A |
на замовлення 5649 шт: термін постачання 21-31 дні (днів) |
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SSM3K15AFS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
на замовлення 46965 шт: термін постачання 21-31 дні (днів) |
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CES521,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 200MA ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 26pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 30 µA @ 30 V |
на замовлення 58615 шт: термін постачання 21-31 дні (днів) |
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SSM6P49NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 6-UDFN (2x2) |
на замовлення 5520 шт: термін постачання 21-31 дні (днів) |
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CUS551V30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 500MA USC |
на замовлення 2154 шт: термін постачання 21-31 дні (днів) |
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TC75S63TU,LF | Toshiba Semiconductor and Storage |
Description: IC CMOS 1 CIRCUIT UFV Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Flat Lead Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 500µA Slew Rate: 1V/µs Gain Bandwidth Product: 3.5 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 1 mV Supplier Device Package: UFV Part Status: Active Number of Circuits: 1 Current - Output / Channel: 4 mA Voltage - Supply Span (Min): 2.2 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 4659 шт: термін постачання 21-31 дні (днів) |
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SSM3K329R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 3.5A 2-3Z1A Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V |
на замовлення 36382 шт: термін постачання 21-31 дні (днів) |
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DF2B6.8M2SC(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM 13VC SC2 |
на замовлення 10051 шт: термін постачання 21-31 дні (днів) |
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SSM6J502NU,LF(T | Toshiba Semiconductor and Storage | Description: MOSFET P CH 20V 6A 2-2AA1A |
на замовлення 5968 шт: термін постачання 21-31 дні (днів) |
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TC7USB31FK(TE85L,F | Toshiba Semiconductor and Storage | Description: DUAL SPST USB SWITCH US8 |
на замовлення 8674 шт: термін постачання 21-31 дні (днів) |
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DF2S6.8SC(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM SC2 |
товар відсутній |
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TC7WB126FK(TE85L,F | Toshiba Semiconductor and Storage | Description: DUAL BUS SWITCH US8 |
на замовлення 3501 шт: термін постачання 21-31 дні (днів) |
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TC58DVG02D5TA00 | Toshiba Semiconductor and Storage | Description: IC FLASH 1GBIT 25NS 48TSOP |
товар відсутній |
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TH58NVG4S0FTA20 | Toshiba Semiconductor and Storage | Description: IC EEPROM 16GBIT 25NS 48TSOP |
на замовлення 128 шт: термін постачання 21-31 дні (днів) |
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TK30E06N1,S1X | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 43A TO220 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TK40E06N1,S1X | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 40A TO220 |
товар відсутній |
DF2B6.8M1ACT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 20VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 3.19 грн |
30000+ | 3.01 грн |
50000+ | 2.5 грн |
TC7LX1104WBG(LC,AH |
Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSLTR BIDIRECTIONAL 12WCSP
Description: IC TRANSLTR BIDIRECTIONAL 12WCSP
товар відсутній
DF2B6.8M2SC(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 13VC SC2
Description: TVS DIODE 5VWM 13VC SC2
на замовлення 12 шт:
термін постачання 21-31 дні (днів)TC7LX1108WBG(LC,AH |
Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSLTR BIDIRECTIONAL 16QFN
Description: IC TRANSLTR BIDIRECTIONAL 16QFN
товар відсутній
DF2S6.8SC(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SC2
Description: TVS DIODE 5VWM SC2
товар відсутній
TC7USB31FK(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: DUAL SPST USB SWITCH US8
Description: DUAL SPST USB SWITCH US8
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)DF2S6.8UCT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC CST2
Description: TVS DIODE 19VWM 22VC CST2
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)TC7WB126FK(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: DUAL BUS SWITCH US8
Description: DUAL BUS SWITCH US8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)DSF01S30SC(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Description: DIODE SCHOTTKY 30V 100MA SC2
товар відсутній
TC7WBD125AFKT5LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-SSOP
Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-SSOP
товар відсутній
DSR01S30SC(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Description: DIODE SCHOTTKY 30V 100MA SC2
товар відсутній
SSM3J332R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Description: MOSFET P-CH 30V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
на замовлення 132000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.14 грн |
6000+ | 4.74 грн |
9000+ | 4.1 грн |
30000+ | 3.77 грн |
75000+ | 3.12 грн |
SSM3K15ACT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3
Description: MOSFET N-CH 30V 100MA CST3
товар відсутній
SSM3K15AFS,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Description: MOSFET N-CH 30V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.94 грн |
6000+ | 2.62 грн |
9000+ | 2.18 грн |
30000+ | 2.01 грн |
SSM3K329R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 3.5A 2-3Z1A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Description: MOSFET N CH 30V 3.5A 2-3Z1A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.95 грн |
6000+ | 5.6 грн |
9000+ | 4.96 грн |
30000+ | 4.6 грн |
SSM3K333R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 6A 2-3Z1A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V
Description: MOSFET N CH 30V 6A 2-3Z1A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.31 грн |
6000+ | 5.94 грн |
9000+ | 5.26 грн |
30000+ | 4.87 грн |
SSM6J502NU,LF(T |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 6A 2-2AA1A
Description: MOSFET P CH 20V 6A 2-2AA1A
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)SSM6J503NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: MOSFET P-CH 20V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
товар відсутній
SSM6N15AFU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
товар відсутній
1SS393SU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 40V USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE ARRAY SCHOTTKY 40V USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
на замовлення 180 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.08 грн |
15+ | 18.32 грн |
100+ | 9.25 грн |
CES388,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA ESC
Description: DIODE SCHOTTKY 40V 100MA ESC
на замовлення 14091 шт:
термін постачання 21-31 дні (днів)SSM3J332R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Description: MOSFET P-CH 30V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
на замовлення 136809 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.51 грн |
15+ | 19.29 грн |
100+ | 9.72 грн |
500+ | 7.45 грн |
1000+ | 5.53 грн |
SSM6P47NU,LF(T |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 2-2Y1A
Description: MOSFET 2P-CH 20V 4A 2-2Y1A
на замовлення 5649 шт:
термін постачання 21-31 дні (днів)TC7LX1104WBG(LC,AH |
Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSLTR BIDIRECTIONAL 12WCSP
Description: IC TRANSLTR BIDIRECTIONAL 12WCSP
товар відсутній
SSM3K333R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 6A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V
Description: MOSFET N CH 30V 6A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V
на замовлення 58589 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.51 грн |
15+ | 19.49 грн |
100+ | 9.83 грн |
500+ | 8.18 грн |
1000+ | 6.37 грн |
TC7LX1108WBG(LC,AH |
Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSLTR BIDIRECTIONAL 16QFN
Description: IC TRANSLTR BIDIRECTIONAL 16QFN
товар відсутній
DF2B6.8M2SC(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 13VC SC2
Description: TVS DIODE 5VWM 13VC SC2
на замовлення 10051 шт:
термін постачання 21-31 дні (днів)DF2S6.8SC(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SC2
Description: TVS DIODE 5VWM SC2
товар відсутній
TC7USB31FK(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: DUAL SPST USB SWITCH US8
Description: DUAL SPST USB SWITCH US8
на замовлення 8674 шт:
термін постачання 21-31 дні (днів)SSM6J502NU,LF(T |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 6A 2-2AA1A
Description: MOSFET P CH 20V 6A 2-2AA1A
на замовлення 5968 шт:
термін постачання 21-31 дні (днів)SSM6J503NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: MOSFET P-CH 20V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
на замовлення 2710 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 32.78 грн |
11+ | 25.74 грн |
100+ | 17.53 грн |
500+ | 12.34 грн |
1000+ | 9.25 грн |
DF2S6.8UCT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC CST2
Description: TVS DIODE 19VWM 22VC CST2
на замовлення 16428 шт:
термін постачання 21-31 дні (днів)TC7WB126FK(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: DUAL BUS SWITCH US8
Description: DUAL BUS SWITCH US8
на замовлення 3501 шт:
термін постачання 21-31 дні (днів)DF2S6.8UCT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC CST2
Description: TVS DIODE 19VWM 22VC CST2
на замовлення 16428 шт:
термін постачання 21-31 дні (днів)SSM6N15AFU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
на замовлення 1024 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.09 грн |
19+ | 14.82 грн |
100+ | 7.47 грн |
500+ | 5.71 грн |
1000+ | 4.24 грн |
TC7WBD125AFKT5LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-SSOP
Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-SSOP
товар відсутній
DSF01S30SC(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Description: DIODE SCHOTTKY 30V 100MA SC2
товар відсутній
DSR01S30SC(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Description: DIODE SCHOTTKY 30V 100MA SC2
товар відсутній
SSM6N37FE,LM(T |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
товар відсутній
SSM6N37FE,LM(T |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
товар відсутній
SSM6N48FU,RF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
товар відсутній
SSM6N48FU,RF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
товар відсутній
CES520,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
на замовлення 14805 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.4 грн |
35+ | 7.89 грн |
100+ | 4.23 грн |
500+ | 3.11 грн |
1000+ | 2.16 грн |
2000+ | 1.79 грн |
SSM3K15ACT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3
Description: MOSFET N-CH 30V 100MA CST3
товар відсутній
SSM6P47NU,LF(T |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 2-2Y1A
Description: MOSFET 2P-CH 20V 4A 2-2Y1A
на замовлення 5649 шт:
термін постачання 21-31 дні (днів)SSM3K15AFS,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Description: MOSFET N-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
на замовлення 46965 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 17.82 грн |
24+ | 11.53 грн |
100+ | 5.63 грн |
500+ | 4.41 грн |
1000+ | 3.06 грн |
CES521,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
на замовлення 58615 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 12.83 грн |
25+ | 11.12 грн |
100+ | 6.07 грн |
500+ | 3.5 грн |
1000+ | 2.39 грн |
2000+ | 2.03 грн |
SSM6P49NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
на замовлення 5520 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.51 грн |
12+ | 23.4 грн |
100+ | 16.24 грн |
500+ | 11.9 грн |
1000+ | 9.67 грн |
CUS551V30,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA USC
Description: DIODE SCHOTTKY 30V 500MA USC
на замовлення 2154 шт:
термін постачання 21-31 дні (днів)TC75S63TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC CMOS 1 CIRCUIT UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 500µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: UFV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
Description: IC CMOS 1 CIRCUIT UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 500µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: UFV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 4659 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.65 грн |
12+ | 24.09 грн |
25+ | 22.02 грн |
100+ | 15.38 грн |
250+ | 13.94 грн |
500+ | 11.53 грн |
1000+ | 8.51 грн |
SSM3K329R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 3.5A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Description: MOSFET N CH 30V 3.5A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
на замовлення 36382 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.08 грн |
15+ | 18.39 грн |
100+ | 9.28 грн |
500+ | 7.72 грн |
1000+ | 6.01 грн |
DF2B6.8M2SC(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 13VC SC2
Description: TVS DIODE 5VWM 13VC SC2
на замовлення 10051 шт:
термін постачання 21-31 дні (днів)SSM6J502NU,LF(T |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 6A 2-2AA1A
Description: MOSFET P CH 20V 6A 2-2AA1A
на замовлення 5968 шт:
термін постачання 21-31 дні (днів)TC7USB31FK(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: DUAL SPST USB SWITCH US8
Description: DUAL SPST USB SWITCH US8
на замовлення 8674 шт:
термін постачання 21-31 дні (днів)DF2S6.8SC(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SC2
Description: TVS DIODE 5VWM SC2
товар відсутній
TC7WB126FK(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: DUAL BUS SWITCH US8
Description: DUAL BUS SWITCH US8
на замовлення 3501 шт:
термін постачання 21-31 дні (днів)TC58DVG02D5TA00 |
Виробник: Toshiba Semiconductor and Storage
Description: IC FLASH 1GBIT 25NS 48TSOP
Description: IC FLASH 1GBIT 25NS 48TSOP
товар відсутній
TH58NVG4S0FTA20 |
Виробник: Toshiba Semiconductor and Storage
Description: IC EEPROM 16GBIT 25NS 48TSOP
Description: IC EEPROM 16GBIT 25NS 48TSOP
на замовлення 128 шт:
термін постачання 21-31 дні (днів)TK30E06N1,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 43A TO220
Description: MOSFET N-CH 60V 43A TO220
на замовлення 2 шт:
термін постачання 21-31 дні (днів)TK40E06N1,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A TO220
Description: MOSFET N-CH 60V 40A TO220
товар відсутній