Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13019) > Сторінка 39 з 217
| Фото | Назва | Виробник | Інформація |
Доступність |
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1SS387,L3F | Toshiba Semiconductor and Storage |
 Description: DIODE GEN PURP 80V 100MA ESCPackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 110137 шт: термін постачання 21-31 дні (днів) |
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1SS389,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 100MA ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 25pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA Current - Reverse Leakage @ Vr: 5 µA @ 10 V |
товар відсутній |
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1SS389(TL3,F,D) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 0.1A ESC |
на замовлення 37125 шт: термін постачання 21-31 дні (днів) |
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1SS405,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 50MA ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz Current - Average Rectified (Io): 50mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 20 V |
на замовлення 43794 шт: термін постачання 21-31 дні (днів) |
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1SS416,L3M | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 100MA SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 15pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-923 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
на замовлення 30685 шт: термін постачання 21-31 дні (днів) |
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2SA1162S-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
товар відсутній |
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2SA1586SU-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A USM |
на замовлення 2334 шт: термін постачання 21-31 дні (днів) |
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2SA1586SU-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
товар відсутній |
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2SC2712-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 37167 шт: термін постачання 21-31 дні (днів) |
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2SC2712S-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANSISTOR NPN 50V 150MA S-MINI |
товар відсутній |
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2SC4116-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
на замовлення 21201 шт: термін постачання 21-31 дні (днів) |
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2SC4116SU-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
товар відсутній |
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DF2B6.8FS(TPL4,D) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 8.5VC FSC |
товар відсутній |
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DF2S6.8FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 9VC SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Power Line Protection: No |
на замовлення 589398 шт: термін постачання 21-31 дні (днів) |
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DF3A6.8LSU,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1302SU,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 0.1W USM |
на замовлення 10784 шт: термін постачання 21-31 дні (днів) |
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RN1401,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SMINI |
на замовлення 17696 шт: термін постачання 21-31 дні (днів) |
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RN1404S,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SMINI |
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RN1405S,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 0.2W S-MINI |
на замовлення 1594 шт: термін постачання 21-31 дні (днів) |
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RN1406,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 7642 шт: термін постачання 21-31 дні (днів) |
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RN2402S,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SMINI |
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SSM3K17SU,LF | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 50V 100MA USM |
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SSM3K36FS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 500MA SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V |
на замовлення 30238 шт: термін постачання 21-31 дні (днів) |
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SSM3K7002BS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 200MA S-MINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: S-Mini Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V |
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SSM6J501NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 10A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V |
на замовлення 107827 шт: термін постачання 21-31 дні (днів) |
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SSM6N7002BFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.2A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.1V @ 250µA Supplier Device Package: US6 Part Status: Obsolete |
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TC7SB3157CFU,LF | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX SGL 1:2 US6 |
на замовлення 2412 шт: термін постачання 21-31 дні (днів) |
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TC7WPB9306FC(TE85L | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 2 X 1:1 CST8 |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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TC7WPB9307FC(TE85L | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH SPST DUAL CST8 |
на замовлення 9904 шт: термін постачання 21-31 дні (днів) |
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TC7WPB9307FK(T5L,F | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH SPST DUAL US8 |
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| TC7MB3125CFK-EL(M) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH LOCAP QUAD 14VSSOP |
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TC7MB3125CFT-EL(M) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH LOCAP QUAD 14TSSOP |
на замовлення 3974 шт: термін постачання 21-31 дні (днів) |
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TC7MBL3257CFK-EL | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX QUAD 1:2 16VSSOP |
на замовлення 3574 шт: термін постачання 21-31 дні (днів) |
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TC7USB221FT(EL,M) | Toshiba Semiconductor and Storage |
Description: IC USB SWITCH SPDT DUAL 14-TSSOP |
на замовлення 5558 шт: термін постачання 21-31 дні (днів) |
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1SS352(TH3,F,D) | Toshiba Semiconductor and Storage |
Description: DIODE SWITCHING 80V 0.1A USC |
на замовлення 61303 шт: термін постачання 21-31 дні (днів) |
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1SS389(TL3,F,D) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 0.1A ESC |
на замовлення 37125 шт: термін постачання 21-31 дні (днів) |
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2SA1586SU-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A USM |
товар відсутній |
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2SC2712S-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANSISTOR NPN 50V 150MA S-MINI |
товар відсутній |
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DF2B6.8FS(TPL4,D) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 8.5VC FSC |
товар відсутній |
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DF3A6.8LSU,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1302SU,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 0.1W USM |
на замовлення 10784 шт: термін постачання 21-31 дні (днів) |
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RN1405S,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 0.2W S-MINI |
на замовлення 1594 шт: термін постачання 21-31 дні (днів) |
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RN2402S,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SMINI |
товар відсутній |
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TC7SB3157CFU,LF | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX SGL 1:2 US6 |
на замовлення 2412 шт: термін постачання 21-31 дні (днів) |
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TC7WPB9307FC(TE85L | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH SPST DUAL CST8 |
на замовлення 9904 шт: термін постачання 21-31 дні (днів) |
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TK100E08N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 100A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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TK22E10N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 52A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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TK40E10N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 90A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 126W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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TK65E10N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 148A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 148A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V |
на замовлення 1065 шт: термін постачання 21-31 дні (днів) |
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TK100E10N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 100A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V |
на замовлення 4360 шт: термін постачання 21-31 дні (днів) |
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1SS393SU,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTTKY 40V USM Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-70 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
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SSM6N37FE,LM(T | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D |
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CES388,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 100MA ESC |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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SSM6N48FU,RF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.1A 2-2J1C |
товар відсутній |
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CES520,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 200MA ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 17pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 30 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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SSM6P47NU,LF(T | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A 2-2Y1A |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CES521,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 200MA ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 26pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 30 µA @ 30 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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SSM6P49NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 6-UDFN (2x2) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUS551V30,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 500MA USC |
товар відсутній |
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TC75S63TU,LF | Toshiba Semiconductor and Storage |
Description: IC CMOS 1 CIRCUIT UFV Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Flat Lead Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 500µA Slew Rate: 1V/µs Gain Bandwidth Product: 3.5 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 1 mV Supplier Device Package: UFV Part Status: Active Number of Circuits: 1 Current - Output / Channel: 4 mA Voltage - Supply Span (Min): 2.2 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| 1SS387,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 110137 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.13 грн |
| 28+ | 9.92 грн |
| 100+ | 4.83 грн |
| 500+ | 3.79 грн |
| 1000+ | 2.63 грн |
| 2000+ | 2.28 грн |
| 1SS389,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Description: DIODE SCHOTTKY 40V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
товар відсутній
| 1SS389(TL3,F,D) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 0.1A ESC
Description: DIODE SCHOTTKY 10V 0.1A ESC
на замовлення 37125 шт:
термін постачання 21-31 дні (днів)| 1SS405,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Description: DIODE SCHOTTKY 20V 50MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
на замовлення 43794 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 18.01 грн |
| 24+ | 11.65 грн |
| 100+ | 5.7 грн |
| 500+ | 4.46 грн |
| 1000+ | 3.1 грн |
| 2000+ | 2.68 грн |
| 1SS416,L3M |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 30685 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 18.01 грн |
| 24+ | 11.65 грн |
| 100+ | 5.7 грн |
| 500+ | 4.46 грн |
| 1000+ | 3.1 грн |
| 2000+ | 2.68 грн |
| 5000+ | 2.45 грн |
| 2SA1162S-Y,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
товар відсутній
| 2SA1586SU-GR,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Description: TRANS PNP 50V 0.15A USM
на замовлення 2334 шт:
термін постачання 21-31 дні (днів)| 2SA1586SU-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
товар відсутній
| 2SC2712-GR,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 37167 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 12.97 грн |
| 32+ | 8.81 грн |
| 100+ | 4.27 грн |
| 500+ | 3.34 грн |
| 1000+ | 2.32 грн |
| 2SC2712S-Y,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN 50V 150MA S-MINI
Description: TRANSISTOR NPN 50V 150MA S-MINI
товар відсутній
| 2SC4116-GR,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
на замовлення 21201 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 11.53 грн |
| 35+ | 7.98 грн |
| 100+ | 4.27 грн |
| 500+ | 3.15 грн |
| 1000+ | 2.19 грн |
| 2SC4116SU-Y,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
товар відсутній
| DF2B6.8FS(TPL4,D) |
|
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 8.5VC FSC
Description: TVS DIODE 5VWM 8.5VC FSC
товар відсутній
| DF2S6.8FS,L3M |
|
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 9VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power Line Protection: No
Description: TVS DIODE 5VWM 9VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power Line Protection: No
на замовлення 589398 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 11.53 грн |
| 35+ | 7.98 грн |
| 100+ | 4.27 грн |
| 500+ | 3.15 грн |
| 1000+ | 2.19 грн |
| 2000+ | 1.81 грн |
| 5000+ | 1.68 грн |
| DF3A6.8LSU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE
Description: TVS DIODE
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| RN1302SU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
Description: TRANS PREBIAS NPN 0.1W USM
на замовлення 10784 шт:
термін постачання 21-31 дні (днів)| RN1401,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
на замовлення 17696 шт:
термін постачання 21-31 дні (днів)| RN1404S,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
товар відсутній
| RN1405S,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
на замовлення 1594 шт:
термін постачання 21-31 дні (днів)| RN1406,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 7642 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 13.69 грн |
| 30+ | 9.36 грн |
| 100+ | 4.56 грн |
| 500+ | 3.56 грн |
| 1000+ | 2.48 грн |
| RN2402S,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
товар відсутній
| SSM3K17SU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 50V 100MA USM
Description: MOSFET N-CH 50V 100MA USM
товар відсутній
| SSM3K36FS,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Description: MOSFET N-CH 20V 500MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
на замовлення 30238 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 18.73 грн |
| 23+ | 12.07 грн |
| 100+ | 5.9 грн |
| 500+ | 4.62 грн |
| 1000+ | 3.21 грн |
| SSM3K7002BS,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
Description: MOSFET N-CH 60V 200MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
товар відсутній
| SSM6J501NU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Description: MOSFET P-CH 20V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
на замовлення 107827 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.98 грн |
| 12+ | 23.31 грн |
| 100+ | 13.97 грн |
| 500+ | 12.14 грн |
| 1000+ | 8.25 грн |
| SSM6N7002BFU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
товар відсутній
| TC7SB3157CFU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX SGL 1:2 US6
Description: IC MUX/DEMUX SGL 1:2 US6
на замовлення 2412 шт:
термін постачання 21-31 дні (днів)| TC7WPB9306FC(TE85L |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 CST8
Description: IC BUS SWITCH 2 X 1:1 CST8
на замовлення 48 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 36.74 грн |
| 11+ | 27.05 грн |
| 25+ | 24.89 грн |
| TC7WPB9307FC(TE85L |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL CST8
Description: IC BUS SWITCH SPST DUAL CST8
на замовлення 9904 шт:
термін постачання 21-31 дні (днів)| TC7WPB9307FK(T5L,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL US8
Description: IC BUS SWITCH SPST DUAL US8
товар відсутній
| TC7MB3125CFK-EL(M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP QUAD 14VSSOP
Description: IC BUS SWITCH LOCAP QUAD 14VSSOP
товар відсутній
| TC7MB3125CFT-EL(M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP QUAD 14TSSOP
Description: IC BUS SWITCH LOCAP QUAD 14TSSOP
на замовлення 3974 шт:
термін постачання 21-31 дні (днів)| TC7MBL3257CFK-EL |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX QUAD 1:2 16VSSOP
Description: IC MUX/DEMUX QUAD 1:2 16VSSOP
на замовлення 3574 шт:
термін постачання 21-31 дні (днів)| TC7USB221FT(EL,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 14-TSSOP
Description: IC USB SWITCH SPDT DUAL 14-TSSOP
на замовлення 5558 шт:
термін постачання 21-31 дні (днів)| 1SS352(TH3,F,D) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SWITCHING 80V 0.1A USC
Description: DIODE SWITCHING 80V 0.1A USC
на замовлення 61303 шт:
термін постачання 21-31 дні (днів)| 1SS389(TL3,F,D) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 0.1A ESC
Description: DIODE SCHOTTKY 10V 0.1A ESC
на замовлення 37125 шт:
термін постачання 21-31 дні (днів)| 2SA1586SU-GR,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Description: TRANS PNP 50V 0.15A USM
товар відсутній
| 2SC2712S-Y,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN 50V 150MA S-MINI
Description: TRANSISTOR NPN 50V 150MA S-MINI
товар відсутній
| DF2B6.8FS(TPL4,D) |
|
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 8.5VC FSC
Description: TVS DIODE 5VWM 8.5VC FSC
товар відсутній
| DF3A6.8LSU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE
Description: TVS DIODE
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| RN1302SU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
Description: TRANS PREBIAS NPN 0.1W USM
на замовлення 10784 шт:
термін постачання 21-31 дні (днів)| RN1405S,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
на замовлення 1594 шт:
термін постачання 21-31 дні (днів)| RN2402S,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
товар відсутній
| TC7SB3157CFU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX SGL 1:2 US6
Description: IC MUX/DEMUX SGL 1:2 US6
на замовлення 2412 шт:
термін постачання 21-31 дні (днів)| TC7WPB9307FC(TE85L |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL CST8
Description: IC BUS SWITCH SPST DUAL CST8
на замовлення 9904 шт:
термін постачання 21-31 дні (днів)| TK100E08N1,S1X |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V
Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 255.01 грн |
| TK22E10N1,S1X |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 52A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Description: MOSFET N CH 100V 52A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| TK40E10N1,S1X |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Description: MOSFET N CH 100V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.78 грн |
| TK65E10N1,S1X |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 148A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 148A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Description: MOSFET N CH 100V 148A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 148A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
на замовлення 1065 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 191.62 грн |
| 10+ | 153.37 грн |
| 100+ | 122.07 грн |
| 500+ | 96.93 грн |
| 1000+ | 82.25 грн |
| TK100E10N1,S1X |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Description: MOSFET N-CH 100V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
на замовлення 4360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 255.01 грн |
| 50+ | 194.27 грн |
| 100+ | 166.53 грн |
| 500+ | 138.91 грн |
| 1000+ | 118.94 грн |
| 2000+ | 112 грн |
| 1SS393SU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 40V USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE ARRAY SCHOTTKY 40V USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
товар відсутній
| SSM6N37FE,LM(T |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
товар відсутній
| CES388,L3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA ESC
Description: DIODE SCHOTTKY 40V 100MA ESC
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| SSM6N48FU,RF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
Description: MOSFET 2N-CH 30V 0.1A 2-2J1C
товар відсутній
| CES520,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 1.89 грн |
| SSM6P47NU,LF(T |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 2-2Y1A
Description: MOSFET 2P-CH 20V 4A 2-2Y1A
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| CES521,L3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 2.05 грн |
| 16000+ | 1.71 грн |
| 24000+ | 1.54 грн |
| SSM6P49NU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.67 грн |
| CUS551V30,H3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA USC
Description: DIODE SCHOTTKY 30V 500MA USC
товар відсутній
| TC75S63TU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC CMOS 1 CIRCUIT UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 500µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: UFV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
Description: IC CMOS 1 CIRCUIT UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 500µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: UFV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.87 грн |