Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13583) > Сторінка 39 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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SSM3K329R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 3.5A 2-3Z1APackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DF2B6.8M2SC(TPL3) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 13VC SC2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SC2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 13V (Typ) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6J502NU,LF(T | Toshiba Semiconductor and Storage |
Description: MOSFET P CH 20V 6A 2-2AA1A |
на замовлення 5968 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TC7USB31FK(TE85L,F | Toshiba Semiconductor and Storage |
Description: DUAL SPST USB SWITCH US8 |
на замовлення 8674 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DF2S6.8SC(TPL3) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM SC2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TC7WB126FK(TE85L,F | Toshiba Semiconductor and Storage |
Description: DUAL BUS SWITCH US8 |
на замовлення 3501 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TC58DVG02D5TA00 | Toshiba Semiconductor and Storage |
Description: IC FLASH 1GBIT 25NS 48TSOP |
товару немає в наявності |
Мінімальне замовлення: 96 шт В кошику од. на суму грн. | ||||||||||||
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TH58NVG4S0FTA20 | Toshiba Semiconductor and Storage |
Description: IC EEPROM 16GBIT 25NS 48TSOP |
на замовлення 128 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TK30E06N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 43A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V |
на замовлення 59 шт: термін постачання 21-31 дні (днів) |
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TK40E06N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 40A TO220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TK58E06N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 58A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TK100E06N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 60V 100A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TK46E08N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 80A TO220 |
товару немає в наявності |
Мінімальне замовлення: 150 шт В кошику од. на суму грн. | ||||||||||||
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TK72E08N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 72A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 36A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 40 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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TK34E10N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 75A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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TPH14006NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 60V 14A 8-SOP ADVPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V Power Dissipation (Max): 1.6W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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TPH7R506NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 22A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TPH5R906NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 28A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TPH4R606NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 32A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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TK10A60W,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 9.7A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TK16A60W,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 15.8A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 790µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPH14006NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 60V 14A 8-SOP ADVPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V Power Dissipation (Max): 1.6W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPH7R506NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 22A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V |
на замовлення 26067 шт: термін постачання 21-31 дні (днів) |
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TPH5R906NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 28A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V |
на замовлення 24969 шт: термін постачання 21-31 дні (днів) |
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TPH4R606NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 32A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V |
на замовлення 2868 шт: термін постачання 21-31 дні (днів) |
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SSM3K15AMFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
на замовлення 94800 шт: термін постачання 21-31 дні (днів) |
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SSM3K15AMFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
на замовлення 93800 шт: термін постачання 21-31 дні (днів) |
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TB62218AFNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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TB6643KQ,8 | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 10V-45V 7HSIPPackaging: Tube Package / Case: 7-SIP Exposed Tab Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Interface: Parallel Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 10V ~ 45V Applications: General Purpose Technology: Bi-CMOS Voltage - Load: 10V ~ 45V Supplier Device Package: 7-HSIP Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 561 шт: термін постачання 21-31 дні (днів) |
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TB6674PG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 16DIP |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TB62208FG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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TB62218AFTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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TB62208FNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48HTSSOP |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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TB62208FTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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TB62212FNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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TB6552FTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 2.7V-5.5V 16WQFNPackaging: Tape & Reel (TR) Package / Case: 16-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: PWM, Serial Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 2.5V ~ 13.5V Supplier Device Package: 16-WQFN (3x3) Motor Type - AC, DC: Brushed DC |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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TB62212FTAG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (8) Voltage - Supply: 4.5V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 48-QFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TB62213AFG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 28HSOPPackaging: Tape & Reel (TR) Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.4A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 28-HSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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TB6560AFTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Interface: Parallel Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 4.5V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 4.5V ~ 34V Supplier Device Package: 48-QFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TB62213AFNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48HTSSOP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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TB6561NG,8 | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 10V-36V 24SDIPPackaging: Tray Package / Case: 24-SDIP (0.300", 7.62mm) Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Interface: PWM Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 10V ~ 36V Applications: General Purpose Technology: Bi-CMOS Voltage - Load: 10V ~ 36V Supplier Device Package: 24-SDIP Motor Type - AC, DC: Brushed DC Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TB62213AFTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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TB6568KQ,8 | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 10V-45V 7HSIPPackaging: Tray Package / Case: 7-SIP Exposed Tab Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Interface: Parallel Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 10V ~ 45V Applications: General Purpose Technology: Bi-CMOS Voltage - Load: 10V ~ 45V Supplier Device Package: 7-HSIP Motor Type - AC, DC: Brushed DC |
на замовлення 426 шт: термін постачання 21-31 дні (днів) |
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TB62214AFG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 28HSOPPackaging: Tape & Reel (TR) Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: DMOS Voltage - Load: 10V ~ 38V Supplier Device Package: 28-HSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TB6569FG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 10V-45V 16HSOPPackaging: Tape & Reel (TR) Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 4A Interface: Parallel, PWM Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 10V ~ 45V Applications: General Purpose Technology: Bi-CMOS Voltage - Load: 10V ~ 45V Supplier Device Package: 16-HSOP Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TB62214AFNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOPPackaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: DMOS Voltage - Load: 10V ~ 38V Supplier Device Package: 48-HTSSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| TB6575FNG(O,C,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR CONTROLLER PAR 24SSOP |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
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TB62214AFTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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TB62215AFG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 28HSOP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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TB62215AFNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48HTSSOP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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TB62215AFTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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TB62216FG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 28HSOP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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TB6614FNG,C,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TB62216FNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR 4.75V-5.25V 48HTSSOPPackaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: PWM Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 48-HTSSOP Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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TB6617FNG(O,EL) | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TB62216FTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 48QFN |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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TB6642FG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 10V-45V 16HSOPPackaging: Tape & Reel (TR) Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Interface: Parallel, PWM Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 10V ~ 45V Applications: General Purpose Technology: Bi-CMOS Voltage - Load: 10V ~ 45V Supplier Device Package: 16-HSOP Motor Type - AC, DC: Brushed DC Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
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TB62218AFG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER PAR 28HSOP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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TB6674FG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRV BIPLR 4.5-5.5V 16HSOPPackaging: Tape & Reel (TR) Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 350mA Interface: Parallel Operating Temperature: -30°C ~ 75°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 4.5V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 2.7V ~ 22V Supplier Device Package: 16-HSOP Motor Type - Stepper: Bipolar Part Status: Not For New Designs |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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TB62216FNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR 4.75V-5.25V 48HTSSOPPackaging: Cut Tape (CT) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: PWM Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 48-HTSSOP Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 1601 шт: термін постачання 21-31 дні (днів) |
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| SSM3K329R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 3.5A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Description: MOSFET N CH 30V 3.5A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DF2B6.8M2SC(TPL3) |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 13VC SC2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Description: TVS DIODE 5VWM 13VC SC2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| SSM6J502NU,LF(T |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 6A 2-2AA1A
Description: MOSFET P CH 20V 6A 2-2AA1A
на замовлення 5968 шт:
термін постачання 21-31 дні (днів)
| TC7USB31FK(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: DUAL SPST USB SWITCH US8
Description: DUAL SPST USB SWITCH US8
на замовлення 8674 шт:
термін постачання 21-31 дні (днів)
| DF2S6.8SC(TPL3) |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SC2
Description: TVS DIODE 5VWM SC2
товару немає в наявності
В кошику
од. на суму грн.
| TC7WB126FK(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: DUAL BUS SWITCH US8
Description: DUAL BUS SWITCH US8
на замовлення 3501 шт:
термін постачання 21-31 дні (днів)
| TC58DVG02D5TA00 |
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Виробник: Toshiba Semiconductor and Storage
Description: IC FLASH 1GBIT 25NS 48TSOP
Description: IC FLASH 1GBIT 25NS 48TSOP
товару немає в наявності
Мінімальне замовлення: 96 шт
В кошику
од. на суму грн.
| TH58NVG4S0FTA20 |
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Виробник: Toshiba Semiconductor and Storage
Description: IC EEPROM 16GBIT 25NS 48TSOP
Description: IC EEPROM 16GBIT 25NS 48TSOP
на замовлення 128 шт:
термін постачання 21-31 дні (днів)
| TK30E06N1,S1X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 43A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
Description: MOSFET N-CH 60V 43A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.73 грн |
| 50+ | 56.76 грн |
| TK40E06N1,S1X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A TO220
Description: MOSFET N-CH 60V 40A TO220
товару немає в наявності
В кошику
од. на суму грн.
| TK58E06N1,S1X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 58A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Description: MOSFET N-CH 60V 58A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| TK100E06N1,S1X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 60V 100A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
Description: MOSFET N CH 60V 100A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| TK46E08N1,S1X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 80A TO220
Description: MOSFET N-CH 80V 80A TO220
товару немає в наявності
Мінімальне замовлення: 150 шт
В кошику
од. на суму грн.
| TK72E08N1,S1X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 72A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 36A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 40 V
Description: MOSFET N-CH 80V 72A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 36A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 40 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 180.49 грн |
| 10+ | 156.42 грн |
| TK34E10N1,S1X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 75A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Description: MOSFET N-CH 100V 75A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.21 грн |
| TPH14006NH,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 60V 14A 8-SOP ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET N CH 60V 14A 8-SOP ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TPH7R506NH,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 22A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V
Description: MOSFET N-CH 60V 22A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 38.09 грн |
| TPH5R906NH,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
Description: MOSFET N-CH 60V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 51.43 грн |
| TPH4R606NH,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 32A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V
Description: MOSFET N-CH 60V 32A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TK10A60W,S4X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 300 V
Description: MOSFET N-CH 600V 9.7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| TK16A60W,S4X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: MOSFET N-CH 600V 15.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| TPH14006NH,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 60V 14A 8-SOP ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET N CH 60V 14A 8-SOP ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| TPH7R506NH,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 22A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V
Description: MOSFET N-CH 60V 22A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V
на замовлення 26067 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.38 грн |
| 10+ | 86.23 грн |
| 100+ | 58.26 грн |
| 500+ | 43.44 грн |
| 1000+ | 39.83 грн |
| 2000+ | 36.79 грн |
| TPH5R906NH,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 28A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
Description: MOSFET N-CH 60V 28A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
на замовлення 24969 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 175.86 грн |
| 10+ | 109.04 грн |
| 100+ | 74.46 грн |
| 500+ | 56.01 грн |
| 1000+ | 51.55 грн |
| 2000+ | 47.80 грн |
| TPH4R606NH,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V
Description: MOSFET N-CH 60V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V
на замовлення 2868 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.24 грн |
| 10+ | 88.83 грн |
| 50+ | 67.10 грн |
| 100+ | 56.38 грн |
| 500+ | 44.82 грн |
| SSM3K15AMFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Description: MOSFET N-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
на замовлення 94800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.74 грн |
| 29+ | 10.40 грн |
| 50+ | 7.46 грн |
| 100+ | 6.08 грн |
| 500+ | 4.46 грн |
| SSM3K15AMFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Description: MOSFET N-CH 30V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
на замовлення 93800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 3.10 грн |
| 24000+ | 2.56 грн |
| TB62218AFNG,C8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TB6643KQ,8 |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 10V-45V 7HSIP
Packaging: Tube
Package / Case: 7-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 7-HSIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 10V-45V 7HSIP
Packaging: Tube
Package / Case: 7-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 7-HSIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 561 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 286.93 грн |
| 10+ | 209.01 грн |
| 25+ | 192.22 грн |
| 100+ | 163.07 грн |
| 250+ | 154.81 грн |
| 500+ | 149.83 грн |
| TB6674PG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 16DIP
Description: IC MOTOR DRIVER PAR 16DIP
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| TB62208FG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP
Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TB62218AFTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| TB62208FNG,C8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| TB62208FTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| TB62212FNG,C8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TB6552FTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 2.7V-5.5V 16WQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: PWM, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 13.5V
Supplier Device Package: 16-WQFN (3x3)
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 2.7V-5.5V 16WQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: PWM, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 13.5V
Supplier Device Package: 16-WQFN (3x3)
Motor Type - AC, DC: Brushed DC
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TB62212FTAG,C8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 92.28 грн |
| 6000+ | 85.57 грн |
| TB62213AFG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TB6560AFTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
Part Status: Active
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| TB62213AFNG,C8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| TB6561NG,8 |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 10V-36V 24SDIP
Packaging: Tray
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: PWM
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 10V ~ 36V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 36V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 10V-36V 24SDIP
Packaging: Tray
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: PWM
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 10V ~ 36V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 36V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| TB62213AFTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TB6568KQ,8 |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 10V-45V 7HSIP
Packaging: Tray
Package / Case: 7-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 7-HSIP
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 10V-45V 7HSIP
Packaging: Tray
Package / Case: 7-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 7-HSIP
Motor Type - AC, DC: Brushed DC
на замовлення 426 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 225.23 грн |
| 10+ | 194.45 грн |
| 25+ | 183.88 грн |
| 100+ | 149.55 грн |
| 250+ | 141.88 грн |
| TB62214AFG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товару немає в наявності
В кошику
од. на суму грн.
| TB6569FG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 10V-45V 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 16-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 10V-45V 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 16-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 85.15 грн |
| TB62214AFNG,C8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 108.28 грн |
| 2000+ | 97.08 грн |
| TB6575FNG(O,C,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR CONTROLLER PAR 24SSOP
Description: IC MOTOR CONTROLLER PAR 24SSOP
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| TB62214AFTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| TB62215AFG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Description: IC MOTOR DRIVER PAR 28HSOP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TB62215AFNG,C8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TB62215AFTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| TB62216FG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Description: IC MOTOR DRIVER PAR 28HSOP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TB6614FNG,C,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP
товару немає в наявності
В кошику
од. на суму грн.
| TB62216FNG,C8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR 4.75V-5.25V 48HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MTR DRVR 4.75V-5.25V 48HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 89.71 грн |
| TB6617FNG(O,EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP
Description: IC MOTOR DRIVER 2.7V-5.5V 16SSOP
товару немає в наявності
В кошику
од. на суму грн.
| TB62216FTG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TB6642FG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 10V-45V 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 16-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 10V-45V 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 45V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 10V ~ 45V
Supplier Device Package: 16-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TB62218AFG,8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Description: IC MOTOR DRIVER PAR 28HSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| TB6674FG,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRV BIPLR 4.5-5.5V 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 350mA
Interface: Parallel
Operating Temperature: -30°C ~ 75°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 2.7V ~ 22V
Supplier Device Package: 16-HSOP
Motor Type - Stepper: Bipolar
Part Status: Not For New Designs
Description: IC MTR DRV BIPLR 4.5-5.5V 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 350mA
Interface: Parallel
Operating Temperature: -30°C ~ 75°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 2.7V ~ 22V
Supplier Device Package: 16-HSOP
Motor Type - Stepper: Bipolar
Part Status: Not For New Designs
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TB62216FNG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR 4.75V-5.25V 48HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MTR DRVR 4.75V-5.25V 48HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 1601 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 166.61 грн |
| 10+ | 119.36 грн |
| 25+ | 109.01 грн |
| 100+ | 91.70 грн |
| 250+ | 86.63 грн |
| 500+ | 83.59 грн |





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