Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Сторінка 38 з 217
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TC7MB3125CFT-EL(M) | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH LOCAP QUAD 14TSSOP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TC7MB3245CFK-EL(M) | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH LOCAP OCTAL 20SSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TC7MB3245CFT-EL(M) | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH LOCAP OCT 20TSSOP |
товар відсутній |
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TC7MB3257CFK-EL(M) | Toshiba Semiconductor and Storage | Description: IC MUX/DEMUX QUAD 1:2 16-VSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TC7MB3257CFT-EL(M) | Toshiba Semiconductor and Storage | Description: IC MUX/DEMUX 4 X 2:1 16TSSOP |
товар відсутній |
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TC7MBL3257CFK-EL | Toshiba Semiconductor and Storage | Description: IC MUX/DEMUX QUAD 1:2 16VSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TC7QPB9306FT(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 4 X 1:1 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 4 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Dual Supply Supplier Device Package: 14-TSSOP |
товар відсутній |
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TC7QPB9307FT(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 4 X 1:1 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 4 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Dual Supply Supplier Device Package: 14-TSSOP |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TC7USB221FT(EL,M) | Toshiba Semiconductor and Storage | Description: IC USB SWITCH SPDT DUAL 14-TSSOP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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1SS184,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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1SS193,LF | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 80V 100MA S-MINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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1SS294,LF | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 100MA S-MINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 25pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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1SS301SU,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-70 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
товар відсутній |
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1SS352(TH3,F,D) | Toshiba Semiconductor and Storage | Description: DIODE SWITCHING 80V 0.1A USC |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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1SS387,L3F | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 80V 100MA ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 96000 шт: термін постачання 21-31 дні (днів) |
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1SS389,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 100MA ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 25pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA Current - Reverse Leakage @ Vr: 5 µA @ 10 V |
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1SS389(TL3,F,D) | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 10V 0.1A ESC |
на замовлення 32000 шт: термін постачання 21-31 дні (днів) |
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1SS405,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 50MA ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz Current - Average Rectified (Io): 50mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 20 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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1SS416,L3M | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 100MA SOD923 Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 15pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-923 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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2SA1162S-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
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2SA1586SU-GR,LF | Toshiba Semiconductor and Storage | Description: TRANS PNP 50V 0.15A USM |
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2SA1586SU-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
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2SC2712-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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2SC2712S-Y,LF | Toshiba Semiconductor and Storage | Description: TRANSISTOR NPN 50V 150MA S-MINI |
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2SC4116-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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2SC4116SU-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
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DF2B6.8FS(TPL4,D) | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM 8.5VC FSC |
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DF2S6.8FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 9VC SOD923 Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Power Line Protection: No |
на замовлення 560000 шт: термін постачання 21-31 дні (днів) |
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DF3A6.8LSU,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1302SU,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W USM |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1401,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A SMINI |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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RN1402S,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
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RN1404S,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A SMINI |
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RN1405S,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.2W S-MINI |
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RN1406,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSM3K17SU,LF | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 50V 100MA USM |
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SSM3K36FS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 500MA SSM Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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SSM3K7002BS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 200MA S-MINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: S-Mini Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V |
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SSM6J501NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 10A 6UDFNB Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
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SSM6N7002BFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.2A US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.1V @ 250µA Supplier Device Package: US6 Part Status: Obsolete |
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TC7SB3157CFU,LF | Toshiba Semiconductor and Storage | Description: IC MUX/DEMUX SGL 1:2 US6 |
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TC7WPB9306FC(TE85L | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH 2 X 1:1 CST8 |
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TC7WPB9306FK,LF | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH SPST DUAL US8 |
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TC7WPB9307FC(TE85L | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH SPST DUAL CST8 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TC7WPB9307FK(T5L,F | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH SPST DUAL US8 |
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TC7MB3125CFK-EL(M) | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH LOCAP QUAD 14VSSOP |
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TC7MB3125CFT-EL(M) | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH LOCAP QUAD 14TSSOP |
на замовлення 3974 шт: термін постачання 21-31 дні (днів) |
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TC7MB3245CFK-EL(M) | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH LOCAP OCTAL 20SSOP |
на замовлення 3881 шт: термін постачання 21-31 дні (днів) |
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TC7MB3245CFT-EL(M) | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH LOCAP OCT 20TSSOP |
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TC7MB3257CFK-EL(M) | Toshiba Semiconductor and Storage | Description: IC MUX/DEMUX QUAD 1:2 16-VSSOP |
на замовлення 4723 шт: термін постачання 21-31 дні (днів) |
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TC7MB3257CFT-EL(M) | Toshiba Semiconductor and Storage | Description: IC MUX/DEMUX 4 X 2:1 16TSSOP |
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TC7MBL3257CFK-EL | Toshiba Semiconductor and Storage | Description: IC MUX/DEMUX QUAD 1:2 16VSSOP |
на замовлення 3574 шт: термін постачання 21-31 дні (днів) |
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TC7QPB9306FT(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 4 X 1:1 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 4 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Dual Supply Supplier Device Package: 14-TSSOP |
на замовлення 3905 шт: термін постачання 21-31 дні (днів) |
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TC7QPB9307FT(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 4 X 1:1 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 4 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Dual Supply Supplier Device Package: 14-TSSOP |
на замовлення 5899 шт: термін постачання 21-31 дні (днів) |
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TC7USB221FT(EL,M) | Toshiba Semiconductor and Storage | Description: IC USB SWITCH SPDT DUAL 14-TSSOP |
на замовлення 5558 шт: термін постачання 21-31 дні (днів) |
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1SS184,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 6535 шт: термін постачання 21-31 дні (днів) |
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1SS193,LF | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 80V 100MA S-MINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 55824 шт: термін постачання 21-31 дні (днів) |
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1SS294,LF | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 100MA S-MINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 25pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
на замовлення 4373 шт: термін постачання 21-31 дні (днів) |
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1SS301SU,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-70 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
товар відсутній |
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1SS352(TH3,F,D) | Toshiba Semiconductor and Storage | Description: DIODE SWITCHING 80V 0.1A USC |
на замовлення 61303 шт: термін постачання 21-31 дні (днів) |
TC7MB3125CFT-EL(M) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP QUAD 14TSSOP
Description: IC BUS SWITCH LOCAP QUAD 14TSSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)TC7MB3245CFK-EL(M) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP OCTAL 20SSOP
Description: IC BUS SWITCH LOCAP OCTAL 20SSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)TC7MB3245CFT-EL(M) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP OCT 20TSSOP
Description: IC BUS SWITCH LOCAP OCT 20TSSOP
товар відсутній
TC7MB3257CFK-EL(M) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX QUAD 1:2 16-VSSOP
Description: IC MUX/DEMUX QUAD 1:2 16-VSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)TC7MB3257CFT-EL(M) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4 X 2:1 16TSSOP
Description: IC MUX/DEMUX 4 X 2:1 16TSSOP
товар відсутній
TC7MBL3257CFK-EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX QUAD 1:2 16VSSOP
Description: IC MUX/DEMUX QUAD 1:2 16VSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)TC7QPB9306FT(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
товар відсутній
TC7QPB9307FT(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 13.5 грн |
TC7USB221FT(EL,M) |
Виробник: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 14-TSSOP
Description: IC USB SWITCH SPDT DUAL 14-TSSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)1SS184,LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.64 грн |
1SS193,LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.35 грн |
6000+ | 2.1 грн |
9000+ | 1.74 грн |
30000+ | 1.61 грн |
1SS294,LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE SCHOTTKY 40V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.86 грн |
1SS301SU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товар відсутній
1SS352(TH3,F,D) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SWITCHING 80V 0.1A USC
Description: DIODE SWITCHING 80V 0.1A USC
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)1SS387,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 2.32 грн |
16000+ | 1.85 грн |
24000+ | 1.82 грн |
56000+ | 1.53 грн |
1SS389,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Description: DIODE SCHOTTKY 40V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
товар відсутній
1SS389(TL3,F,D) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 0.1A ESC
Description: DIODE SCHOTTKY 10V 0.1A ESC
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)1SS405,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Description: DIODE SCHOTTKY 20V 50MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 2.94 грн |
8000+ | 2.62 грн |
12000+ | 2.18 грн |
28000+ | 2.01 грн |
1SS416,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 2.26 грн |
2SA1162S-Y,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
товар відсутній
2SA1586SU-GR,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Description: TRANS PNP 50V 0.15A USM
товар відсутній
2SA1586SU-Y,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
товар відсутній
2SC2712-GR,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.2 грн |
6000+ | 1.97 грн |
9000+ | 1.63 грн |
30000+ | 1.5 грн |
2SC2712S-Y,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN 50V 150MA S-MINI
Description: TRANSISTOR NPN 50V 150MA S-MINI
товар відсутній
2SC4116-GR,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 1.98 грн |
6000+ | 1.8 грн |
9000+ | 1.54 грн |
2SC4116SU-Y,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
товар відсутній
DF2B6.8FS(TPL4,D) |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 8.5VC FSC
Description: TVS DIODE 5VWM 8.5VC FSC
товар відсутній
DF2S6.8FS,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 9VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power Line Protection: No
Description: TVS DIODE 5VWM 9VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power Line Protection: No
на замовлення 560000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.6 грн |
30000+ | 1.42 грн |
50000+ | 1.23 грн |
100000+ | 1.08 грн |
250000+ | 0.96 грн |
DF3A6.8LSU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE
Description: TVS DIODE
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)RN1302SU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
Description: TRANS PREBIAS NPN 0.1W USM
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)RN1401,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)RN1402S,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
RN1404S,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
товар відсутній
RN1405S,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
товар відсутній
RN1406,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.35 грн |
SSM3K17SU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 50V 100MA USM
Description: MOSFET N-CH 50V 100MA USM
товар відсутній
SSM3K36FS,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Description: MOSFET N-CH 20V 500MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.05 грн |
6000+ | 2.72 грн |
9000+ | 2.26 грн |
SSM3K7002BS,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
Description: MOSFET N-CH 60V 200MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
товар відсутній
SSM6J501NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Description: MOSFET P-CH 20V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.32 грн |
6000+ | 7.68 грн |
9000+ | 6.91 грн |
30000+ | 6.39 грн |
75000+ | 6 грн |
SSM6N7002BFU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
товар відсутній
TC7SB3157CFU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX SGL 1:2 US6
Description: IC MUX/DEMUX SGL 1:2 US6
товар відсутній
TC7WPB9306FC(TE85L |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 CST8
Description: IC BUS SWITCH 2 X 1:1 CST8
товар відсутній
TC7WPB9306FK,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL US8
Description: IC BUS SWITCH SPST DUAL US8
товар відсутній
TC7WPB9307FC(TE85L |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL CST8
Description: IC BUS SWITCH SPST DUAL CST8
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)TC7WPB9307FK(T5L,F |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL US8
Description: IC BUS SWITCH SPST DUAL US8
товар відсутній
TC7MB3125CFK-EL(M) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP QUAD 14VSSOP
Description: IC BUS SWITCH LOCAP QUAD 14VSSOP
товар відсутній
TC7MB3125CFT-EL(M) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP QUAD 14TSSOP
Description: IC BUS SWITCH LOCAP QUAD 14TSSOP
на замовлення 3974 шт:
термін постачання 21-31 дні (днів)TC7MB3245CFK-EL(M) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP OCTAL 20SSOP
Description: IC BUS SWITCH LOCAP OCTAL 20SSOP
на замовлення 3881 шт:
термін постачання 21-31 дні (днів)TC7MB3245CFT-EL(M) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP OCT 20TSSOP
Description: IC BUS SWITCH LOCAP OCT 20TSSOP
товар відсутній
TC7MB3257CFK-EL(M) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX QUAD 1:2 16-VSSOP
Description: IC MUX/DEMUX QUAD 1:2 16-VSSOP
на замовлення 4723 шт:
термін постачання 21-31 дні (днів)TC7MB3257CFT-EL(M) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4 X 2:1 16TSSOP
Description: IC MUX/DEMUX 4 X 2:1 16TSSOP
товар відсутній
TC7MBL3257CFK-EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX QUAD 1:2 16VSSOP
Description: IC MUX/DEMUX QUAD 1:2 16VSSOP
на замовлення 3574 шт:
термін постачання 21-31 дні (днів)TC7QPB9306FT(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
на замовлення 3905 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.49 грн |
10+ | 31.43 грн |
25+ | 29.35 грн |
100+ | 22.04 грн |
250+ | 20.47 грн |
500+ | 17.32 грн |
1000+ | 13.16 грн |
TC7QPB9307FT(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-TSSOP
на замовлення 5899 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.49 грн |
10+ | 31.43 грн |
25+ | 29.35 грн |
100+ | 22.04 грн |
250+ | 20.47 грн |
500+ | 17.32 грн |
1000+ | 13.16 грн |
TC7USB221FT(EL,M) |
Виробник: Toshiba Semiconductor and Storage
Description: IC USB SWITCH SPDT DUAL 14-TSSOP
Description: IC USB SWITCH SPDT DUAL 14-TSSOP
на замовлення 5558 шт:
термін постачання 21-31 дні (днів)1SS184,LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 6535 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
19+ | 15.68 грн |
27+ | 10.36 грн |
100+ | 5.07 грн |
500+ | 3.97 грн |
1000+ | 2.76 грн |
1SS193,LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 55824 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 13.54 грн |
30+ | 9.27 грн |
100+ | 4.51 грн |
500+ | 3.53 грн |
1000+ | 2.45 грн |
1SS294,LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE SCHOTTKY 40V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
на замовлення 4373 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.38 грн |
19+ | 14.48 грн |
100+ | 7.3 грн |
500+ | 5.59 грн |
1000+ | 4.14 грн |
1SS301SU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товар відсутній
1SS352(TH3,F,D) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SWITCHING 80V 0.1A USC
Description: DIODE SWITCHING 80V 0.1A USC
на замовлення 61303 шт:
термін постачання 21-31 дні (днів)