Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13583) > Сторінка 45 з 227

Виробник: Toshiba Semiconductor and Storage
Description: DIODE VARICAP VCO 10V FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 4.9pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 10V
Capacitance Ratio Condition: C1/C4
Supplier Device Package: fSC
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.3

Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 10V FSC

Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms

Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI

Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 20V 0.3A SMINI

Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6

Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6

Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6

Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6

Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.5W US6

Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6

Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6

Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.2W S-MINI

Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV

Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W USV

Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SM6
Part Status: Active

Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6

Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6

Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN PNP 50V 100MA US6

Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.7A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.35A, 10V
Power Dissipation (Max): 700mW (Ta)
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 413 pF @ 15 V

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: 5-SSOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.3A US6

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 0.4A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: US6
Part Status: Not For New Designs

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.1A US6

Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Gain Bandwidth Product: 300 kHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: SMV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 12 V

Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 2.8V 0.2A UFV

Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: UFV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature

Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: UFV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature

Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 4V 0.2A UFV

Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 200MA UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: UFV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature

Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: UFV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature

Виробник: Toshiba Semiconductor and Storage
Description: IC INV 6-CIR 1-IN 16-SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8mA, 48mA
Number of Inputs: 1
Supplier Device Package: 16-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA

Виробник: Toshiba Semiconductor and Storage
Description: IC MUX 8:1 160OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 20MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1.5MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1

Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4X1 TSSOP

Виробник: Toshiba Semiconductor and Storage
Description: IC BILATERAL SW 1 X 1:1 14TSSOP

Виробник: Toshiba Semiconductor and Storage
Description: IC INV 6-CIR 1-IN 14-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA

Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP SMV

Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV

Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4X1 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 140MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 18ns, 29ns (Typ)
Channel Capacitance (CS(off), CD(off)): 2pF, 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2

Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 2X1 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Multiplexer/Demultiplexer Circuit: 3:1

Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH QUAD BILATERAL 14TSSOP

Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 5-SSOP
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 20µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active

Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: SMV
Propagation Delay (Max): 800ns
Current - Quiescent (Max): 20µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active

Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 5-SSOP
Propagation Delay (Max): 800ns
Current - Quiescent (Max): 20µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active

Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2CH 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 40µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active

Виробник: Toshiba Semiconductor and Storage
Description: IC COMP DUAL GP PP CMOS US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 400µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA

Виробник: Toshiba Semiconductor and Storage
Description: IC INV 1-CIR 1-IN 5-SSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA

Виробник: Toshiba Semiconductor and Storage
Description: IC BILATERAL SWITCH 1 X 1:1 SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 12V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: SMV

Виробник: Toshiba Semiconductor and Storage
Description: IC GATE USV L-MOS SMV

Виробник: Toshiba Semiconductor and Storage
Description: IC GATE SMV L-MOS SMV

Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP FSV

Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP FSV

Виробник: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS FSV

Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V FSV

Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER SCHMITT 1CH FSV

Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA

Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V

Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 4V SC59-3

Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 4 Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SMV
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V