Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13580) > Сторінка 45 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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DF5A5.6CFUTE85LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM USVPower Line Protection: No Voltage - Breakdown (Min): 5.3V Unidirectional Channels: 4 Supplier Device Package: USV Voltage - Reverse Standoff (Typ): 3.5V Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Type: Zener Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 2780 шт: термін постачання 21-31 дні (днів) |
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DF5A5.6FTE85LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 2.5VWM SMV |
на замовлення 6954 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DF5A5.6FUTE85LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 2.5VWM USVPart Status: Active Power Line Protection: No Voltage - Breakdown (Min): 5.3V Unidirectional Channels: 4 Supplier Device Package: USV Voltage - Reverse Standoff (Typ): 2.5V Capacitance @ Frequency: 65pF @ 1MHz Applications: General Purpose Type: Zener Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 7135 шт: термін постачання 21-31 дні (днів) |
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DF5A6.2LFUTE85LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM USVType: Zener Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 5.9V Unidirectional Channels: 4 Supplier Device Package: USV Voltage - Reverse Standoff (Typ): 5V Capacitance @ Frequency: 6.5pF @ 1MHz Applications: General Purpose Packaging: Cut Tape (CT) |
на замовлення 1289 шт: термін постачання 21-31 дні (днів) |
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DF5A6.8FUTE85LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM USVPower Line Protection: No Voltage - Breakdown (Min): 6.4V Unidirectional Channels: 4 Supplier Device Package: USV Voltage - Reverse Standoff (Typ): 5V Capacitance @ Frequency: 45pF @ 1MHz Applications: General Purpose Type: Zener Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 4167 шт: термін постачання 21-31 дні (днів) |
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DF5A6.8LFUTE85LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM USVType: Zener Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) Power Line Protection: No Voltage - Breakdown (Min): 6.5V Unidirectional Channels: 4 Supplier Device Package: 5-SSOP Voltage - Reverse Standoff (Typ): 5V Capacitance @ Frequency: 6pF @ 1MHz Applications: General Purpose |
на замовлення 26136 шт: термін постачання 21-31 дні (днів) |
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HN1B01FU-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP 50V 0.15A US6-PLN |
на замовлення 2982 шт: термін постачання 21-31 дні (днів) |
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HN1C01FU-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN DUAL 50V 150MA US6Part Status: Active Supplier Device Package: US6 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 200mW Operating Temperature: 125°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 2860 шт: термін постачання 21-31 дні (днів) |
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HN1C01FYTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 0.15A SM6 |
на замовлення 2801 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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HN1D03FTE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC-74Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-74 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Pair CA + CC Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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HN1D04FUTE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA US6Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: US6 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 1.6 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HN2C01FEYTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 0.15A ES6 |
на замовлення 3930 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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HN2D01FTE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 80MA SC74Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-74 Current - Average Rectified (Io) (per Diode): 80mA Diode Configuration: 3 Independent Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) Reverse Recovery Time (trr): 4 ns |
на замовлення 5811 шт: термін постачання 21-31 дні (днів) |
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HN2S01FUTE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARR SCHOTT 10V 100MA US6Current - Reverse Leakage @ Vr: 20 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 10 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: US6 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 3 Independent Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 12445 шт: термін постачання 21-31 дні (днів) |
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HN2S03FUTE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTT 20V 50MA US6Current - Reverse Leakage @ Vr: 500 nA @ 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: US6 Current - Average Rectified (Io) (per Diode): 50mA Diode Configuration: 3 Independent Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HN3C10FUTE85LF | Toshiba Semiconductor and Storage | Description: RF TRANS 2 NPN 12V 7GHZ US6 |
на замовлення 101 шт: термін постачання 21-31 дні (днів) |
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HN4A51JTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP DUAL 120V 100MA SMVSupplier Device Package: SMV Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 120V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 7492 шт: термін постачання 21-31 дні (днів) |
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HN4K03JUTE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 0.1A USV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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JDH2S01FSTPL3 | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 4V 25MA FSC |
на замовлення 7995 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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JDH2S02FSTPL3 | Toshiba Semiconductor and Storage |
Description: RF DIODE SCHOTTKY 10V FSCCurrent - Max: 10 mA Part Status: Not For New Designs Supplier Device Package: fSC Voltage - Peak Reverse (Max): 10V Capacitance @ Vr, F: 0.3pF @ 0.2V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: Schottky - Single Package / Case: 2-SMD, Flat Lead Packaging: Cut Tape (CT) |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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JDH3D01STE85LF | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 4V 25MA SSM |
на замовлення 2064 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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JDV2S07FSTPL3 | Toshiba Semiconductor and Storage |
Description: DIODE VARICAP VCO 10V FSC Part Status: Active Supplier Device Package: fSC Voltage - Peak Reverse (Max): 10V Capacitance @ Vr, F: 4.9pF @ 1V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: Single Package / Case: 2-SMD, Flat Lead Packaging: Cut Tape (CT) Capacitance Ratio: 2.3 Voltage - Peak Reverse (Max): 10 V Capacitance Ratio Condition: C1/C4 Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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JDV2S09FSTPL3 | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 10V FSC |
на замовлення 2750 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN1412TE85LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SMINI Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: S-Mini DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 1850 шт: термін постачання 21-31 дні (днів) |
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RN1441ATE85LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 0.2W S-MINI |
на замовлення 2368 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN1442ATE85LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 0.2W S-MINI |
на замовлення 2450 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN1444ATE85LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 20V 0.3A SMINI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1605TE85LF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SM6Supplier Device Package: SM6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 250MHz Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
на замовлення 47 шт: термін постачання 21-31 дні (днів) |
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RN1901FETE85LF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.1W ES6 |
на замовлення 16104 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN1902T5LFT | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.2W US6 |
на замовлення 2805 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN1911FETE85LF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.1W ES6 |
на замовлення 3635 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN1962TE85LF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.5W US6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1964TE85LF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.2W US6 |
на замовлення 2840 шт: термін постачання 21-31 дні (днів) |
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RN1971TE85LF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.2W US6 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN2404TE85LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 0.2W S-MINI |
на замовлення 5385 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN2505TE85LF | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMV |
на замовлення 2925 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN2702TE85LF | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.2W USV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN4602TE85LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.3W SM6Part Status: Active Supplier Device Package: SM6 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN4905T5LFT | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN4982,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.2W US6Supplier Device Package: US6 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz, 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 3847 шт: термін постачання 21-31 дні (днів) |
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RN4987T5LFT | Toshiba Semiconductor and Storage |
Description: TRANS NPN PNP 50V 100MA US6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN49A2,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
на замовлення 64 шт: термін постачання 21-31 дні (днів) |
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SSM3J14TTE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 2.7A TSMFET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 413 pF @ 15 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TSM Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.35A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM5N16FUTE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 100MA USVInput Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Supplier Device Package: 5-SSOP Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM6J08FUTE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 1.3A US6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM6L09FUTE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V 0.4A US6Part Status: Not For New Designs Supplier Device Package: US6 Vgs(th) (Max) @ Id: 1.8V @ 100µA FET Feature: Logic Level Gate Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA Drain to Source Voltage (Vdss): 30V Power - Max: 300mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 53604 шт: термін постачання 21-31 дні (днів) |
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SSM6N16FUTE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.1A US6 |
на замовлення 5370 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TA75S01F,LF | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 1 CIRCUIT SMVPackaging: Cut Tape (CT) Voltage - Supply Span (Max): 12 V Voltage - Supply Span (Min): 3 V Current - Output / Channel: 40 mA Number of Circuits: 1 Part Status: Active Supplier Device Package: SMV Voltage - Input Offset: 2 mV Current - Input Bias: 45 nA Gain Bandwidth Product: 300 kHz Current - Supply: 400µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 |
на замовлення 5630 шт: термін постачання 21-31 дні (днів) |
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TAR5S28UTE85LF | Toshiba Semiconductor and Storage |
Description: IC REG LDO 2.8V 0.2A UFV |
на замовлення 1942 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TAR5S30UTE85LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA UFVPart Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 3V Supplier Device Package: UFV Number of Regulators: 1 Voltage - Input (Max): 15V Current - Quiescent (Iq): 850 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-SMD (5 Leads), Flat Lead Packaging: Cut Tape (CT) Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.2V @ 50mA PSRR: 70dB (1kHz) |
на замовлення 865 шт: термін постачання 21-31 дні (днів) |
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TAR5S33UTE85LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 200MA UFVSupplier Device Package: UFV Number of Regulators: 1 Voltage - Input (Max): 15V Current - Quiescent (Iq): 850 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-SMD (5 Leads), Flat Leads Packaging: Cut Tape (CT) Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.2V @ 50mA PSRR: 70dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 3.3V |
на замовлення 31654 шт: термін постачання 21-31 дні (днів) |
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TAR5S40UTE85LF | Toshiba Semiconductor and Storage |
Description: IC REG LDO 4V 0.2A UFV |
на замовлення 2019 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TAR5S45UTE85LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 4.5V 200MA UFV Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.2V @ 50mA PSRR: 70dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 4.5V Supplier Device Package: UFV Number of Regulators: 1 Voltage - Input (Max): 15V Current - Quiescent (Iq): 850 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-SMD (5 Leads), Flat Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TAR5S50UTE85LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 200MA UFV Control Features: Enable Voltage - Output (Min/Fixed): 5V Supplier Device Package: UFV Number of Regulators: 1 Voltage - Input (Max): 15V Current - Quiescent (Iq): 850 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-SMD (5 Leads), Flat Lead Packaging: Cut Tape (CT) Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.2V @ 50mA PSRR: 70dB (1kHz) Part Status: Active |
на замовлення 19619 шт: термін постачання 21-31 дні (днів) |
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TC4049BF-ELNF | Toshiba Semiconductor and Storage |
Description: IC INV 6-CIR 1-IN 16-SOPPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 8mA, 48mA Number of Inputs: 1 Supplier Device Package: 16-SOP Input Logic Level - High: 3.5V ~ 11V Input Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 4 µA |
на замовлення 2582 шт: термін постачання 21-31 дні (днів) |
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TC4051BFTELN | Toshiba Semiconductor and Storage |
Description: IC MUX 8:1 160OHM 16TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 160Ohm -3db Bandwidth: 20MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 3V ~ 18V Crosstalk: -50dB @ 1.5MHz Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 4Ohm Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
на замовлення 3382 шт: термін постачання 21-31 дні (днів) |
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TC4052BFTELN | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX 4X1 TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC4066BFTELN | Toshiba Semiconductor and Storage |
Description: IC BILATERAL SW 1 X 1:1 14TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC4069UBFTELN | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 3.4mA, 3.4mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 4V ~ 12V Input Logic Level - Low: 1V ~ 3V Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 1 µA |
на замовлення 9301 шт: термін постачання 21-31 дні (днів) |
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TC4S71FT5LFT | Toshiba Semiconductor and Storage |
Description: IC GATE OR 1CH 2-INP SMV |
товару немає в наявності |
В кошику од. на суму грн. |
| DF5A5.6CFUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USV
Power Line Protection: No
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 3.5V
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: TVS DIODE 3.5VWM USV
Power Line Protection: No
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 3.5V
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 2780 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.65 грн |
| 20+ | 15.62 грн |
| 100+ | 9.83 грн |
| 500+ | 6.87 грн |
| 1000+ | 6.10 грн |
| DF5A5.6FTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM SMV
Description: TVS DIODE 2.5VWM SMV
на замовлення 6954 шт:
термін постачання 21-31 дні (днів)
| DF5A5.6FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM USV
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 2.5V
Capacitance @ Frequency: 65pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: TVS DIODE 2.5VWM USV
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 2.5V
Capacitance @ Frequency: 65pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 7135 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.46 грн |
| 29+ | 10.64 грн |
| 100+ | 5.02 грн |
| 500+ | 4.68 грн |
| 1000+ | 4.65 грн |
| DF5A6.2LFUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 5.9V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 6.5pF @ 1MHz
Applications: General Purpose
Packaging: Cut Tape (CT)
Description: TVS DIODE 5VWM USV
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 5.9V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 6.5pF @ 1MHz
Applications: General Purpose
Packaging: Cut Tape (CT)
на замовлення 1289 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.24 грн |
| 27+ | 11.47 грн |
| 100+ | 5.54 грн |
| 500+ | 5.14 грн |
| 1000+ | 5.02 грн |
| DF5A6.8FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 45pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: TVS DIODE 5VWM USV
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 45pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 4167 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.46 грн |
| 29+ | 10.64 грн |
| 100+ | 5.09 грн |
| 500+ | 4.71 грн |
| 1000+ | 4.65 грн |
| DF5A6.8LFUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Power Line Protection: No
Voltage - Breakdown (Min): 6.5V
Unidirectional Channels: 4
Supplier Device Package: 5-SSOP
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 6pF @ 1MHz
Applications: General Purpose
Description: TVS DIODE 5VWM USV
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Power Line Protection: No
Voltage - Breakdown (Min): 6.5V
Unidirectional Channels: 4
Supplier Device Package: 5-SSOP
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 6pF @ 1MHz
Applications: General Purpose
на замовлення 26136 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.81 грн |
| 25+ | 12.38 грн |
| 100+ | 6.39 грн |
| 500+ | 5.70 грн |
| 1000+ | 5.40 грн |
| HN1B01FU-GR,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A US6-PLN
Description: TRANS NPN/PNP 50V 0.15A US6-PLN
на замовлення 2982 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.08 грн |
| HN1C01FU-GR,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: TRANS 2NPN DUAL 50V 150MA US6
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 2860 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.03 грн |
| 29+ | 10.57 грн |
| 100+ | 6.60 грн |
| 500+ | 4.55 грн |
| 1000+ | 4.02 грн |
| HN1C01FYTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SM6
Description: TRANS 2NPN 50V 0.15A SM6
на замовлення 2801 шт:
термін постачання 21-31 дні (днів)
| HN1D03FTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC-74
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-74
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair CA + CC
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA SC-74
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-74
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair CA + CC
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.22 грн |
| 19+ | 16.76 грн |
| 50+ | 12.06 грн |
| 100+ | 9.89 грн |
| 500+ | 7.35 грн |
| HN1D04FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 1.6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 1.6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| HN2C01FEYTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A ES6
Description: TRANS 2NPN 50V 0.15A ES6
на замовлення 3930 шт:
термін постачання 21-31 дні (днів)
| HN2D01FTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA SC74
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-74
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 3 Independent
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Reverse Recovery Time (trr): 4 ns
Description: DIODE ARRAY GP 80V 80MA SC74
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-74
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 3 Independent
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Reverse Recovery Time (trr): 4 ns
на замовлення 5811 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.14 грн |
| 14+ | 22.34 грн |
| 100+ | 11.25 грн |
| 500+ | 9.35 грн |
| 1000+ | 7.28 грн |
| HN2S01FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 10V 100MA US6
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 10V 100MA US6
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 12445 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.16 грн |
| 22+ | 13.74 грн |
| 100+ | 9.22 грн |
| 500+ | 6.67 грн |
| 1000+ | 6.01 грн |
| HN2S03FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 20V 50MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 50mA
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 20V 50MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 50mA
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| HN3C10FUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS 2 NPN 12V 7GHZ US6
Description: RF TRANS 2 NPN 12V 7GHZ US6
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.97 грн |
| 10+ | 33.06 грн |
| 100+ | 24.67 грн |
| HN4A51JTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 7492 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.33 грн |
| 12+ | 25.21 грн |
| 100+ | 16.05 грн |
| 500+ | 11.37 грн |
| 1000+ | 10.17 грн |
| HN4K03JUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 0.1A USV
Description: MOSFET N-CH 20V 0.1A USV
товару немає в наявності
В кошику
од. на суму грн.
| JDH2S01FSTPL3 |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 4V 25MA FSC
Description: DIODE SCHOTTKY 4V 25MA FSC
на замовлення 7995 шт:
термін постачання 21-31 дні (днів)
| JDH2S02FSTPL3 |
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Виробник: Toshiba Semiconductor and Storage
Description: RF DIODE SCHOTTKY 10V FSC
Current - Max: 10 mA
Part Status: Not For New Designs
Supplier Device Package: fSC
Voltage - Peak Reverse (Max): 10V
Capacitance @ Vr, F: 0.3pF @ 0.2V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Schottky - Single
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: RF DIODE SCHOTTKY 10V FSC
Current - Max: 10 mA
Part Status: Not For New Designs
Supplier Device Package: fSC
Voltage - Peak Reverse (Max): 10V
Capacitance @ Vr, F: 0.3pF @ 0.2V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Schottky - Single
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.06 грн |
| 12+ | 25.74 грн |
| JDH3D01STE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 4V 25MA SSM
Description: DIODE SCHOTTKY 4V 25MA SSM
на замовлення 2064 шт:
термін постачання 21-31 дні (днів)
| JDV2S07FSTPL3 |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE VARICAP VCO 10V FSC
Part Status: Active
Supplier Device Package: fSC
Voltage - Peak Reverse (Max): 10V
Capacitance @ Vr, F: 4.9pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Single
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Capacitance Ratio: 2.3
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio Condition: C1/C4
Mounting Type: Surface Mount
Description: DIODE VARICAP VCO 10V FSC
Part Status: Active
Supplier Device Package: fSC
Voltage - Peak Reverse (Max): 10V
Capacitance @ Vr, F: 4.9pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Single
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Capacitance Ratio: 2.3
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio Condition: C1/C4
Mounting Type: Surface Mount
товару немає в наявності
В кошику
од. на суму грн.
| JDV2S09FSTPL3 |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 10V FSC
Description: DIODE STANDARD 10V FSC
на замовлення 2750 шт:
термін постачання 21-31 дні (днів)
| RN1412TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 1850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.81 грн |
| 28+ | 10.87 грн |
| 100+ | 6.76 грн |
| 500+ | 4.66 грн |
| 1000+ | 4.11 грн |
| RN1441ATE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
на замовлення 2368 шт:
термін постачання 21-31 дні (днів)
| RN1442ATE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
| RN1444ATE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 20V 0.3A SMINI
Description: TRANS PREBIAS NPN 20V 0.3A SMINI
товару немає в наявності
В кошику
од. на суму грн.
| RN1605TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.73 грн |
| 23+ | 13.36 грн |
| RN1901FETE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
на замовлення 16104 шт:
термін постачання 21-31 дні (днів)
| RN1902T5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
на замовлення 2805 шт:
термін постачання 21-31 дні (днів)
| RN1911FETE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
на замовлення 3635 шт:
термін постачання 21-31 дні (днів)
| RN1962TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.5W US6
Description: TRANS 2NPN PREBIAS 0.5W US6
товару немає в наявності
В кошику
од. на суму грн.
| RN1964TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
на замовлення 2840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.65 грн |
| 16+ | 19.40 грн |
| 100+ | 10.98 грн |
| 500+ | 6.82 грн |
| 1000+ | 5.23 грн |
| RN1971TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| RN2404TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.2W S-MINI
Description: TRANS PREBIAS PNP 0.2W S-MINI
на замовлення 5385 шт:
термін постачання 21-31 дні (днів)
| RN2505TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Description: TRANS 2PNP PREBIAS 0.3W SMV
на замовлення 2925 шт:
термін постачання 21-31 дні (днів)
| RN2702TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W USV
Description: TRANS 2PNP PREBIAS 0.2W USV
товару немає в наявності
В кошику
од. на суму грн.
| RN4602TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Part Status: Active
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Part Status: Active
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| RN4905T5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
| RN4982,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 3847 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.87 грн |
| 18+ | 16.83 грн |
| 100+ | 8.23 грн |
| 500+ | 6.44 грн |
| 1000+ | 4.47 грн |
| RN4987T5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN PNP 50V 100MA US6
Description: TRANS NPN PNP 50V 100MA US6
товару немає в наявності
В кошику
од. на суму грн.
| RN49A2,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
на замовлення 64 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.16 грн |
| 19+ | 16.61 грн |
| SSM3J14TTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.7A TSM
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 413 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSM
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Description: MOSFET P-CH 30V 2.7A TSM
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 413 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSM
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
товару немає в наявності
В кошику
од. на суму грн.
| SSM5N16FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA USV
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: 5-SSOP
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 100MA USV
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: 5-SSOP
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SSM6J08FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.3A US6
Description: MOSFET P-CH 20V 1.3A US6
товару немає в наявності
В кошику
од. на суму грн.
| SSM6L09FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 0.4A US6
Part Status: Not For New Designs
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 0.4A US6
Part Status: Not For New Designs
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 53604 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.92 грн |
| 16+ | 19.47 грн |
| 100+ | 12.35 грн |
| 500+ | 8.68 грн |
| 1000+ | 7.74 грн |
| SSM6N16FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.1A US6
Description: MOSFET 2N-CH 20V 0.1A US6
на замовлення 5370 шт:
термін постачання 21-31 дні (днів)
| TA75S01F,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT SMV
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 12 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SMV
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Gain Bandwidth Product: 300 kHz
Current - Supply: 400µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Description: IC OPAMP GP 1 CIRCUIT SMV
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 12 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SMV
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Gain Bandwidth Product: 300 kHz
Current - Supply: 400µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
на замовлення 5630 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.70 грн |
| 12+ | 26.79 грн |
| 25+ | 24.49 грн |
| 100+ | 17.12 грн |
| 250+ | 15.51 грн |
| 500+ | 12.84 грн |
| 1000+ | 9.47 грн |
| TAR5S28UTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 2.8V 0.2A UFV
Description: IC REG LDO 2.8V 0.2A UFV
на замовлення 1942 шт:
термін постачання 21-31 дні (днів)
| TAR5S30UTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA UFV
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Description: IC REG LINEAR 3V 200MA UFV
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
на замовлення 865 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.97 грн |
| 10+ | 32.91 грн |
| 25+ | 30.73 грн |
| 100+ | 23.08 грн |
| 250+ | 21.43 грн |
| 500+ | 18.14 грн |
| TAR5S33UTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA UFV
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Description: IC REG LINEAR 3.3V 200MA UFV
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
на замовлення 31654 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.43 грн |
| 17+ | 18.19 грн |
| 25+ | 16.21 грн |
| 100+ | 13.16 грн |
| 250+ | 12.18 грн |
| 500+ | 11.59 грн |
| 1000+ | 10.92 грн |
| TAR5S40UTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 4V 0.2A UFV
Description: IC REG LDO 4V 0.2A UFV
на замовлення 2019 шт:
термін постачання 21-31 дні (днів)
| TAR5S45UTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 200MA UFV
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 4.5V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 4.5V 200MA UFV
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 4.5V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| TAR5S50UTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA UFV
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Part Status: Active
Description: IC REG LINEAR 5V 200MA UFV
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Part Status: Active
на замовлення 19619 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.41 грн |
| 10+ | 31.63 грн |
| 25+ | 29.56 грн |
| 100+ | 22.20 грн |
| 250+ | 20.61 грн |
| 500+ | 17.44 грн |
| 1000+ | 13.26 грн |
| TC4049BF-ELNF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INV 6-CIR 1-IN 16-SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8mA, 48mA
Number of Inputs: 1
Supplier Device Package: 16-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Description: IC INV 6-CIR 1-IN 16-SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8mA, 48mA
Number of Inputs: 1
Supplier Device Package: 16-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
на замовлення 2582 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.33 грн |
| 11+ | 29.13 грн |
| 25+ | 26.06 грн |
| 100+ | 21.35 грн |
| 250+ | 19.87 грн |
| 500+ | 18.97 грн |
| 1000+ | 18.27 грн |
| TC4051BFTELN |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MUX 8:1 160OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 20MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1.5MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC MUX 8:1 160OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 20MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1.5MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
на замовлення 3382 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.22 грн |
| 16+ | 18.87 грн |
| 25+ | 16.85 грн |
| 100+ | 13.69 грн |
| 250+ | 12.68 грн |
| 500+ | 12.07 грн |
| 1000+ | 11.39 грн |
| TC4052BFTELN |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4X1 TSSOP
Description: IC MUX/DEMUX 4X1 TSSOP
товару немає в наявності
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од. на суму грн.
| TC4066BFTELN |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BILATERAL SW 1 X 1:1 14TSSOP
Description: IC BILATERAL SW 1 X 1:1 14TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| TC4069UBFTELN |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
на замовлення 9301 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.81 грн |
| 24+ | 12.83 грн |
| 27+ | 11.32 грн |
| 100+ | 9.14 грн |
| 250+ | 8.42 грн |
| 500+ | 7.98 грн |
| 1000+ | 7.50 грн |
| TC4S71FT5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP SMV
Description: IC GATE OR 1CH 2-INP SMV
товару немає в наявності
В кошику
од. на суму грн.















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