Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Сторінка 42 з 217
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TB62208FTG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 3888 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62213AFG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 28HSOP Packaging: Cut Tape (CT) Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.4A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 28-HSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
товар відсутній |
||||||||||||||||
TB62213AFTG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 1985 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62213AFTG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 1985 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62214AFTG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 3372 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62214AFTG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 3372 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62215AFTG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62215AFTG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62216FTG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48QFN |
товар відсутній |
||||||||||||||||
TB62216FTG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48QFN |
товар відсутній |
||||||||||||||||
TB62218AFTG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 2823 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62218AFTG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48QFN |
на замовлення 2823 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB6560AFTG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Interface: Parallel Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 4.5V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 4.5V ~ 34V Supplier Device Package: 48-QFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16 Part Status: Active |
товар відсутній |
||||||||||||||||
TB6575FNG(O,C,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR CONTROLLER PAR 24SSOP |
на замовлення 4997 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB6575FNG(O,C,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR CONTROLLER PAR 24SSOP |
на замовлення 4997 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62208FG,8,EL | Toshiba Semiconductor and Storage | Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP |
товар відсутній |
||||||||||||||||
TB62208FNG,C8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48HTSSOP |
на замовлення 780 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62208FNG,C8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48HTSSOP |
товар відсутній |
||||||||||||||||
TB62212FNG,C8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP |
на замовлення 453 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62212FTAG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (8) Voltage - Supply: 4.5V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 48-QFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 6159 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TB62213AFNG,C8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48HTSSOP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62213AFNG,C8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48HTSSOP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62214AFG,8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 28HSOP Packaging: Cut Tape (CT) Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: DMOS Voltage - Load: 10V ~ 38V Supplier Device Package: 28-HSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
товар відсутній |
||||||||||||||||
TB62214AFNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP Packaging: Cut Tape (CT) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: DMOS Voltage - Load: 10V ~ 38V Supplier Device Package: 48-HTSSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 Part Status: Active |
на замовлення 3032 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TB62215AFG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 28HSOP |
на замовлення 1528 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62215AFG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 28HSOP |
на замовлення 1528 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62215AFNG,C8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48HTSSOP |
на замовлення 983 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62215AFNG,C8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 48HTSSOP |
на замовлення 983 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB62216FG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 28HSOP |
товар відсутній |
||||||||||||||||
TB62216FG,8,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER PAR 28HSOP |
товар відсутній |
||||||||||||||||
TC7SZU04FUTF | Toshiba Semiconductor and Storage | Description: IC INVERTER 1CH 1-INP USV |
товар відсутній |
||||||||||||||||
TC74LVX373FW | Toshiba Semiconductor and Storage | Description: IC LATCH OCTAL D-TYPE 20-SOL |
на замовлення 2360 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TK10A60W,S4VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 9.7A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
на замовлення 47 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TK16A60W,S4VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 15.8A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 790µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TK56E12N1,S1X | Toshiba Semiconductor and Storage | Description: MOSFET N CH 120V 56A TO-220 |
товар відсутній |
||||||||||||||||
TK72E12N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 120V 72A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Ta) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V |
товар відсутній |
||||||||||||||||
TPH1400ANH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 24A 8-SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V Power Dissipation (Max): 1.6W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V |
товар відсутній |
||||||||||||||||
TPH8R80ANH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 32A 8-SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TPN22006NH,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 9A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V Power Dissipation (Max): 700mW (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 12 Input Capacitance (Ciss) (Max) @ Vds: 710 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TPN30008NH,LQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 80V 9.6A 8TSON |
товар відсутній |
||||||||||||||||
TPN3300ANH,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 9.4A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V Power Dissipation (Max): 700mW (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TPH1400ANH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 24A 8-SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V Power Dissipation (Max): 1.6W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V |
на замовлення 4458 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TPH8R80ANH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 100V 32A 8-SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V |
на замовлення 29944 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TPN22006NH,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 9A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V Power Dissipation (Max): 700mW (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 12 Input Capacitance (Ciss) (Max) @ Vds: 710 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TPN30008NH,LQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 80V 9.6A 8TSON |
на замовлення 158 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TPN3300ANH,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 9.4A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V Power Dissipation (Max): 700mW (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V |
на замовлення 15884 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TK42E12N1,S1X | Toshiba Semiconductor and Storage | Description: MOSFET N CH 120V 88A TO-220 |
товар відсутній |
||||||||||||||||
TK6A60W,S4VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 6.2A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 3.1A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 310µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TPN2R503NC,L1Q | Toshiba Semiconductor and Storage | Description: MOSFET N CH 30V 40A 8TSON-ADV |
товар відсутній |
||||||||||||||||
TPN2R503NC,L1Q | Toshiba Semiconductor and Storage | Description: MOSFET N CH 30V 40A 8TSON-ADV |
товар відсутній |
||||||||||||||||
TK31J60W5,S1VQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 30.8A TO-3P(N) |
товар відсутній |
||||||||||||||||
TK39J60W,S1VQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 38.8A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1.9mA Supplier Device Package: TO-3P(N) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TK39J60W5,S1VQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 38.8A TO3P |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TK31E60W,S1VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 30.8A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V |
товар відсутній |
||||||||||||||||
TK31J60W,S1VQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 30.8A TO3P |
товар відсутній |
||||||||||||||||
TK7P60W,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 350µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V |
товар відсутній |
||||||||||||||||
TK7P60W,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 350µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V |
на замовлення 1994 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TK32E12N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 120V 60A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TPN6R303NC,LQ | Toshiba Semiconductor and Storage | Description: MOSFET N CH 30V 20A 8TSON-ADV |
товар відсутній |
||||||||||||||||
TPN6R303NC,LQ | Toshiba Semiconductor and Storage | Description: MOSFET N CH 30V 20A 8TSON-ADV |
товар відсутній |
TB62208FTG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 3888 шт:
термін постачання 21-31 дні (днів)TB62213AFG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товар відсутній
TB62213AFTG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 1985 шт:
термін постачання 21-31 дні (днів)TB62213AFTG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 1985 шт:
термін постачання 21-31 дні (днів)TB62214AFTG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 3372 шт:
термін постачання 21-31 дні (днів)TB62214AFTG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 3372 шт:
термін постачання 21-31 дні (днів)TB62215AFTG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)TB62215AFTG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)TB62216FTG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
товар відсутній
TB62216FTG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
товар відсутній
TB62218AFTG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 2823 шт:
термін постачання 21-31 дні (днів)TB62218AFTG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Description: IC MOTOR DRIVER PAR 48QFN
на замовлення 2823 шт:
термін постачання 21-31 дні (днів)TB6560AFTG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
Part Status: Active
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
Part Status: Active
товар відсутній
TB6575FNG(O,C,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR CONTROLLER PAR 24SSOP
Description: IC MOTOR CONTROLLER PAR 24SSOP
на замовлення 4997 шт:
термін постачання 21-31 дні (днів)TB6575FNG(O,C,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR CONTROLLER PAR 24SSOP
Description: IC MOTOR CONTROLLER PAR 24SSOP
на замовлення 4997 шт:
термін постачання 21-31 дні (днів)TB62208FG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP
Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP
товар відсутній
TB62208FNG,C8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
на замовлення 780 шт:
термін постачання 21-31 дні (днів)TB62208FNG,C8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
товар відсутній
TB62212FNG,C8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
на замовлення 453 шт:
термін постачання 21-31 дні (днів)TB62212FTAG,C8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 6159 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 186.01 грн |
10+ | 161.14 грн |
25+ | 152.06 грн |
100+ | 121.57 грн |
250+ | 114.16 грн |
500+ | 99.89 грн |
1000+ | 81.41 грн |
TB62213AFNG,C8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)TB62213AFNG,C8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)TB62214AFG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товар відсутній
TB62214AFNG,C8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
на замовлення 3032 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 203.83 грн |
10+ | 176.11 грн |
25+ | 166.11 грн |
100+ | 132.83 грн |
250+ | 124.72 грн |
500+ | 109.13 грн |
TB62215AFG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Description: IC MOTOR DRIVER PAR 28HSOP
на замовлення 1528 шт:
термін постачання 21-31 дні (днів)TB62215AFG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Description: IC MOTOR DRIVER PAR 28HSOP
на замовлення 1528 шт:
термін постачання 21-31 дні (днів)TB62215AFNG,C8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
на замовлення 983 шт:
термін постачання 21-31 дні (днів)TB62215AFNG,C8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Description: IC MOTOR DRIVER PAR 48HTSSOP
на замовлення 983 шт:
термін постачання 21-31 дні (днів)TB62216FG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Description: IC MOTOR DRIVER PAR 28HSOP
товар відсутній
TB62216FG,8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Description: IC MOTOR DRIVER PAR 28HSOP
товар відсутній
TC7SZU04FUTF |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP USV
Description: IC INVERTER 1CH 1-INP USV
товар відсутній
TC74LVX373FW |
Виробник: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20-SOL
Description: IC LATCH OCTAL D-TYPE 20-SOL
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)TK10A60W,S4VX |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 176.04 грн |
TK16A60W,S4VX |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: MOSFET N-CH 600V 15.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 187.44 грн |
TK56E12N1,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 56A TO-220
Description: MOSFET N CH 120V 56A TO-220
товар відсутній
TK72E12N1,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 72A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V
Description: MOSFET N CH 120V 72A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V
товар відсутній
TPH1400ANH,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
товар відсутній
TPH8R80ANH,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 53.53 грн |
10000+ | 49.56 грн |
TPN22006NH,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12
Input Capacitance (Ciss) (Max) @ Vds: 710
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12
Input Capacitance (Ciss) (Max) @ Vds: 710
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 25.26 грн |
TPN30008NH,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 9.6A 8TSON
Description: MOSFET N-CH 80V 9.6A 8TSON
товар відсутній
TPN3300ANH,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 24.09 грн |
6000+ | 22.09 грн |
9000+ | 21.07 грн |
TPH1400ANH,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
на замовлення 4458 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 94.08 грн |
10+ | 74.12 грн |
100+ | 57.66 грн |
500+ | 45.87 грн |
1000+ | 37.37 грн |
2000+ | 35.18 грн |
TPH8R80ANH,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
на замовлення 29944 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 121.16 грн |
10+ | 105.07 грн |
100+ | 84.45 грн |
500+ | 65.12 грн |
1000+ | 53.95 грн |
2000+ | 50.23 грн |
TPN22006NH,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12
Input Capacitance (Ciss) (Max) @ Vds: 710
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12
Input Capacitance (Ciss) (Max) @ Vds: 710
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 65.57 грн |
10+ | 55.38 грн |
100+ | 42.44 грн |
500+ | 31.48 грн |
1000+ | 25.19 грн |
TPN30008NH,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 9.6A 8TSON
Description: MOSFET N-CH 80V 9.6A 8TSON
на замовлення 158 шт:
термін постачання 21-31 дні (днів)TPN3300ANH,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
на замовлення 15884 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 57.73 грн |
10+ | 45.85 грн |
100+ | 35.68 грн |
500+ | 28.39 грн |
1000+ | 23.12 грн |
TK42E12N1,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 88A TO-220
Description: MOSFET N CH 120V 88A TO-220
товар відсутній
TK6A60W,S4VX |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6.2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Description: MOSFET N-CH 600V 6.2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 142.54 грн |
TPN2R503NC,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 40A 8TSON-ADV
Description: MOSFET N CH 30V 40A 8TSON-ADV
товар відсутній
TPN2R503NC,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 40A 8TSON-ADV
Description: MOSFET N CH 30V 40A 8TSON-ADV
товар відсутній
TK31J60W5,S1VQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO-3P(N)
Description: MOSFET N-CH 600V 30.8A TO-3P(N)
товар відсутній
TK39J60W,S1VQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 764.01 грн |
TK39J60W5,S1VQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO3P
Description: MOSFET N-CH 600V 38.8A TO3P
на замовлення 26 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 791.81 грн |
10+ | 688.57 грн |
TK31E60W,S1VX |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Description: MOSFET N-CH 600V 30.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
товар відсутній
TK31J60W,S1VQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO3P
Description: MOSFET N-CH 600V 30.8A TO3P
товар відсутній
TK7P60W,RVQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Description: MOSFET N CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
товар відсутній
TK7P60W,RVQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Description: MOSFET N CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
на замовлення 1994 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 133.99 грн |
10+ | 107.61 грн |
100+ | 85.62 грн |
500+ | 67.99 грн |
1000+ | 57.69 грн |
TK32E12N1,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
Description: MOSFET N CH 120V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 101.92 грн |
10+ | 88.33 грн |
TPN6R303NC,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 20A 8TSON-ADV
Description: MOSFET N CH 30V 20A 8TSON-ADV
товар відсутній
TPN6R303NC,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 20A 8TSON-ADV
Description: MOSFET N CH 30V 20A 8TSON-ADV
товар відсутній