Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13261) > Сторінка 94 з 222
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SSM6N56FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.8A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
на замовлення 84000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
DF2B7M2SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 20VC SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 40W Power Line Protection: No |
товар відсутній |
||||||||||||||||||||
DF2B7SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.3VWM 16VC SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 45W Power Line Protection: No |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
DF2S6.8UCT,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||||
DF2S6.8UFS,L3M | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||||
SSM3K337R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 38V 2A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.7V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 38 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
SSM3J133TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 5.5A UFM Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
на замовлення 45241 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
SSM6N56FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.8A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
на замовлення 86257 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
DF2B7M2SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 20VC SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 40W Power Line Protection: No |
на замовлення 9095 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
DF2B7SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.3VWM 16VC SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 45W Power Line Protection: No |
на замовлення 18222 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
DF2S6.8UCT,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC |
на замовлення 19630 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||||
DF2S6.8UFS,L3M | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC |
на замовлення 3943 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||||
SSM3K337R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 38V 2A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.7V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 38 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V |
на замовлення 12304 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
DF2S6.8UCT,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC |
на замовлення 19630 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||||
DF2S6.8UFS,L3M | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC |
на замовлення 3943 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||||
2SB906-Y(TE16L1,NQ | Toshiba Semiconductor and Storage |
Description: TRANS PNP 60V 3A PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 9MHz Supplier Device Package: PW-MOLD Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
товар відсутній |
||||||||||||||||||||
74LCX00FT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 4CH 2-INP 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 10 µA |
товар відсутній |
||||||||||||||||||||
74LCX04FT(AE) | Toshiba Semiconductor and Storage | Description: IC INVERTER HEX 14TSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||||
74LCX05FT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14TSSOP Features: Open Drain Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: -, 32mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Grade: Automotive Number of Circuits: 6 Current - Quiescent (Max): 10 µA Qualification: AEC-Q100 |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
74LCX07FT | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 5.5V 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: 14-TSSOP Part Status: Active |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
74LCX126FT(AE) | Toshiba Semiconductor and Storage | Description: IC BUS BUFFER QDLV N-INV 14TSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||||
CTS05S30,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 500MA CST2 Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 55pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA Current - Reverse Leakage @ Vr: 150 µA @ 10 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CTS05S40,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 500MA CST2 Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 42pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CTS520,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 200MA CST2 Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 16pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 30 V |
на замовлення 570000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CTS521,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 200MA CST2 Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 25pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 30 µA @ 30 V |
на замовлення 140000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CUS05S30,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 500MA USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 55pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA Current - Reverse Leakage @ Vr: 150 µA @ 10 V |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CUS05S40,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 500MA USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 42pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CUS08F30,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 800MA USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 170pF @ 0V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 800 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
на замовлення 897000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CUS10S30,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 135pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 230 mV @ 100 mA Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 161680 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CUS10S40,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1A USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 120pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 500 mA Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CUS15S30,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1.5A USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CUS15S40,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1.5A USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 170pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CUS520,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 200MA USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 17pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 280 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 30 V |
на замовлення 144000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
TC7PCI3212MT,LF | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX QUAD 1:2 20TQFN Packaging: Tape & Reel (TR) Package / Case: 20-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: PCI Express® On-State Resistance (Max): 13.5Ohm -3db Bandwidth: 11.5GHz Supplier Device Package: 20-TQFN (2.5x4.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 4 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
TC7SET02F,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 1CH 2-INP SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SMV Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товар відсутній |
||||||||||||||||||||
TC7SET02FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 1CH 2-INP 5SSOP Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товар відсутній |
||||||||||||||||||||
TC7SET04F,LJ(CT | Toshiba Semiconductor and Storage | Description: IC INVERTER 1CH 1-INP SMV |
товар відсутній |
||||||||||||||||||||
TC7SET125F,LJ(CT | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 5.5V SMV |
товар відсутній |
||||||||||||||||||||
TC7SET14F,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 1CH 1-INP SMV Features: Schmitt Trigger Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: SMV Input Logic Level - High: 1.9V ~ 2.1V Input Logic Level - Low: 0.5V ~ 0.6V Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
TC7SET17F,LJ(CT | Toshiba Semiconductor and Storage | Description: IC BUFFER SCHM TRIG 5-SSOP |
товар відсутній |
||||||||||||||||||||
TC7SET34F,LJ(CT | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 5.5V SMV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||||
TC7SH04F,LJ(CT | Toshiba Semiconductor and Storage | Description: IC INVERTER SINGLE |
товар відсутній |
||||||||||||||||||||
TC7SH09F,LJ(CT | Toshiba Semiconductor and Storage | Description: IC GATE AND 1CH 2-INP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||||
TC7SH09FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE AND 1CH 2-INP 5SSOP Features: Open Drain Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: -, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
TC7SH126F,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: SMV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
TC7SH17F,LJ(CT | Toshiba Semiconductor and Storage | Description: IC SNGL SCHM BUFFER SMV |
товар відсутній |
||||||||||||||||||||
TC7SH34F,LJ(CT | Toshiba Semiconductor and Storage | Description: IC GATE L-MOS SMV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||||
TC7SHU04F,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: SMV Input Logic Level - High: 1.7V Input Logic Level - Low: 0.3V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
TC7SZ00FE,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 1CH 2-INP ESV Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: ESV Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товар відсутній |
||||||||||||||||||||
TC7SZ02F,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 1CH 2-INP SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SMV Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товар відсутній |
||||||||||||||||||||
TC7SZ04FE,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP ESV Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 1 Supplier Device Package: ESV Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
TC7SZ05FE,LJ(CT | Toshiba Semiconductor and Storage | Description: IC INVERTER OPEN-DRAIN ESV |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||||
TC7SZ126F,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: SMV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
TC7SZ126FE,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V ESV Packaging: Tape & Reel (TR) Package / Case: SOT-553 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: ESV |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
TC7SZ34F,LJ(CT | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 5.5V SMV |
товар відсутній |
||||||||||||||||||||
TC7SZ34FE,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V ESV Packaging: Tape & Reel (TR) Package / Case: SOT-553 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: ESV |
товар відсутній |
||||||||||||||||||||
TC7SZ34FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V USV Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 5-SSOP |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
TC7SZ86F,LJ(CT | Toshiba Semiconductor and Storage | Description: IC GATE XOR 1CH 2-INP SMV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||||
TC7SZ86FE,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE XOR 1CH 2-INP ESV Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: ESV Max Propagation Delay @ V, Max CL: 5.4ns @ 5V, 50pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
TC7SZ86FU,LJ(CT | Toshiba Semiconductor and Storage | Description: IC GATE XOR 1CH 2-INP USV |
товар відсутній |
SSM6N56FE,LM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 6.07 грн |
8000+ | 5.59 грн |
12000+ | 4.84 грн |
28000+ | 4.45 грн |
DF2B7M2SL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
товар відсутній
DF2B7SL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.8 грн |
DF2S6.8UCT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)DF2S6.8UFS,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
на замовлення 12 шт:
термін постачання 21-31 дні (днів)SSM3K337R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.54 грн |
6000+ | 9.63 грн |
9000+ | 8.94 грн |
SSM3J133TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
на замовлення 45241 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 39.88 грн |
13+ | 23.64 грн |
100+ | 15.1 грн |
500+ | 10.69 грн |
1000+ | 9.57 грн |
SSM6N56FE,LM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 86257 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 34.4 грн |
14+ | 22.74 грн |
100+ | 11.49 грн |
500+ | 8.79 грн |
1000+ | 6.53 грн |
2000+ | 5.49 грн |
DF2B7M2SL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
на замовлення 9095 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 23.46 грн |
20+ | 15.74 грн |
100+ | 7.65 грн |
500+ | 5.99 грн |
1000+ | 4.16 грн |
2000+ | 3.61 грн |
5000+ | 3.29 грн |
DF2B7SL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
на замовлення 18222 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 14.07 грн |
33+ | 9.26 грн |
100+ | 4.49 грн |
500+ | 3.52 грн |
1000+ | 2.44 грн |
2000+ | 2.12 грн |
5000+ | 1.93 грн |
DF2S6.8UCT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
на замовлення 19630 шт:
термін постачання 21-31 дні (днів)DF2S6.8UFS,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
на замовлення 3943 шт:
термін постачання 21-31 дні (днів)SSM3K337R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
на замовлення 12304 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.28 грн |
12+ | 25.75 грн |
100+ | 17.89 грн |
500+ | 13.11 грн |
1000+ | 10.65 грн |
DF2S6.8UCT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
на замовлення 19630 шт:
термін постачання 21-31 дні (днів)DF2S6.8UFS,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
на замовлення 3943 шт:
термін постачання 21-31 дні (днів)2SB906-Y(TE16L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 60V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
товар відсутній
74LCX00FT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
товар відсутній
74LCX04FT(AE) |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER HEX 14TSSOP
Description: IC INVERTER HEX 14TSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)74LCX05FT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Grade: Automotive
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Grade: Automotive
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 9.5 грн |
5000+ | 8.6 грн |
12500+ | 8.04 грн |
74LCX07FT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 14-TSSOP
Part Status: Active
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 14-TSSOP
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 9.34 грн |
5000+ | 8.45 грн |
12500+ | 7.9 грн |
74LCX126FT(AE) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS BUFFER QDLV N-INV 14TSSOP
Description: IC BUS BUFFER QDLV N-INV 14TSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)CTS05S30,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA
Current - Reverse Leakage @ Vr: 150 µA @ 10 V
Description: DIODE SCHOTTKY 30V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA
Current - Reverse Leakage @ Vr: 150 µA @ 10 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 3.24 грн |
20000+ | 2.83 грн |
30000+ | 2.69 грн |
CTS05S40,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Description: DIODE SCHOTTKY 40V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 3.1 грн |
30000+ | 2.93 грн |
CTS520,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
на замовлення 570000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.5 грн |
20000+ | 1.3 грн |
30000+ | 1.27 грн |
CTS521,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
на замовлення 140000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.54 грн |
20000+ | 1.34 грн |
30000+ | 1.3 грн |
CUS05S30,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA
Current - Reverse Leakage @ Vr: 150 µA @ 10 V
Description: DIODE SCHOTTKY 30V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA
Current - Reverse Leakage @ Vr: 150 µA @ 10 V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.67 грн |
6000+ | 3.28 грн |
9000+ | 2.72 грн |
30000+ | 2.51 грн |
75000+ | 2.25 грн |
CUS05S40,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Description: DIODE SCHOTTKY 40V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.63 грн |
6000+ | 3.14 грн |
9000+ | 2.95 грн |
15000+ | 2.58 грн |
21000+ | 2.46 грн |
30000+ | 2.35 грн |
CUS08F30,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 800MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 800 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 800MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 800 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 897000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.65 грн |
6000+ | 3.15 грн |
9000+ | 2.96 грн |
15000+ | 2.59 грн |
21000+ | 2.47 грн |
30000+ | 2.36 грн |
75000+ | 2.08 грн |
150000+ | 1.93 грн |
300000+ | 1.88 грн |
CUS10S30,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 135pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 230 mV @ 100 mA
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 135pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 230 mV @ 100 mA
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 161680 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.55 грн |
6000+ | 3.95 грн |
9000+ | 3.72 грн |
15000+ | 3.26 грн |
21000+ | 3.12 грн |
30000+ | 2.99 грн |
75000+ | 2.64 грн |
150000+ | 2.5 грн |
CUS10S40,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 500 mA
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 500 mA
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.38 грн |
6000+ | 4.03 грн |
9000+ | 3.49 грн |
30000+ | 3.21 грн |
CUS15S30,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1.5A USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.38 грн |
6000+ | 4.03 грн |
9000+ | 3.49 грн |
CUS15S40,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1.5A USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.79 грн |
6000+ | 4.41 грн |
9000+ | 3.82 грн |
CUS520,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 280 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 280 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
на замовлення 144000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.52 грн |
6000+ | 2.16 грн |
9000+ | 2.03 грн |
15000+ | 1.76 грн |
21000+ | 1.68 грн |
30000+ | 1.6 грн |
75000+ | 1.39 грн |
TC7PCI3212MT,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX QUAD 1:2 20TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
On-State Resistance (Max): 13.5Ohm
-3db Bandwidth: 11.5GHz
Supplier Device Package: 20-TQFN (2.5x4.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Description: IC MUX/DEMUX QUAD 1:2 20TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
On-State Resistance (Max): 13.5Ohm
-3db Bandwidth: 11.5GHz
Supplier Device Package: 20-TQFN (2.5x4.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 37.75 грн |
TC7SET02F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NOR 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
товар відсутній
TC7SET02FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
товар відсутній
TC7SET04F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP SMV
Description: IC INVERTER 1CH 1-INP SMV
товар відсутній
TC7SET125F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Description: IC BUFFER NON-INVERT 5.5V SMV
товар відсутній
TC7SET14F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1-INP SMV
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SMV
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERT SCHMITT 1CH 1-INP SMV
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SMV
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.04 грн |
TC7SET17F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER SCHM TRIG 5-SSOP
Description: IC BUFFER SCHM TRIG 5-SSOP
товар відсутній
TC7SET34F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Description: IC BUFFER NON-INVERT 5.5V SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)TC7SH04F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER SINGLE
Description: IC INVERTER SINGLE
товар відсутній
TC7SH09F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP
Description: IC GATE AND 1CH 2-INP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)TC7SH09FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: -, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 1CH 2-INP 5SSOP
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: -, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.49 грн |
6000+ | 3.89 грн |
TC7SH126F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SMV
Description: IC BUFFER NON-INVERT 5.5V SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.06 грн |
TC7SH17F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC SNGL SCHM BUFFER SMV
Description: IC SNGL SCHM BUFFER SMV
товар відсутній
TC7SH34F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS SMV
Description: IC GATE L-MOS SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)TC7SHU04F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SMV
Input Logic Level - High: 1.7V
Input Logic Level - Low: 0.3V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 1CH 1-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SMV
Input Logic Level - High: 1.7V
Input Logic Level - Low: 0.3V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.07 грн |
TC7SZ00FE,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: ESV
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 1CH 2-INP ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: ESV
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
товар відсутній
TC7SZ02F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SMV
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NOR 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SMV
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
товар відсутній
TC7SZ04FE,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: ESV
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 1CH 1-INP ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: ESV
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 4.62 грн |
TC7SZ05FE,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER OPEN-DRAIN ESV
Description: IC INVERTER OPEN-DRAIN ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)TC7SZ126F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SMV
Description: IC BUFFER NON-INVERT 5.5V SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.24 грн |
TC7SZ126FE,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: ESV
Description: IC BUFFER NON-INVERT 5.5V ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 4.94 грн |
TC7SZ34F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Description: IC BUFFER NON-INVERT 5.5V SMV
товар відсутній
TC7SZ34FE,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: ESV
Description: IC BUFFER NON-INVERT 5.5V ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: ESV
товар відсутній
TC7SZ34FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 5-SSOP
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 5-SSOP
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.3 грн |
6000+ | 3.73 грн |
TC7SZ86F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP SMV
Description: IC GATE XOR 1CH 2-INP SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)TC7SZ86FE,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: ESV
Max Propagation Delay @ V, Max CL: 5.4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE XOR 1CH 2-INP ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: ESV
Max Propagation Delay @ V, Max CL: 5.4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 4.94 грн |
8000+ | 4.28 грн |
12000+ | 3.81 грн |
TC7SZ86FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP USV
Description: IC GATE XOR 1CH 2-INP USV
товар відсутній