Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13460) > Сторінка 92 з 225
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TL1WK-WH1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS NEU WHITE 4000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TL1WK-DW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 6500K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TL1WK-LL1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS WARM WHT 2700K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TL1WK-LW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS WARM WHT 3000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TL1WK-NT1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5700K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TL1WK-NW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TL1WK-WH1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS NEU WHITE 4000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TL1WK-DW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 6500K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TL1WK-LL1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS WARM WHT 2700K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TL1WK-LW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS WARM WHT 3000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TL1WK-NT1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5700K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TL1WK-NW1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS COOL WHT 5000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TL1WK-WH1,L | Toshiba Semiconductor and Storage |
Description: LED LETERAS NEU WHITE 4000K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCS40DLR,LF | Toshiba Semiconductor and Storage |
Description: MAGNETIC SWITCH OMNIPOLAR SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 5.5V Technology: Hall Effect Sensing Range: ±4.4mT Trip, ±0.9mT Release Current - Output (Max): 5mA Current - Supply (Max): 1.6mA (Typ) Supplier Device Package: SOT-23F Test Condition: 25°C Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TCS40DPR,LF | Toshiba Semiconductor and Storage |
Description: MAGNETIC SWITCH OMNIPOLAR SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 5.5V Technology: Hall Effect Sensing Range: ±4.4mT Trip, ±0.9mT Release Current - Output (Max): 5mA Current - Supply (Max): 1.6mA (Typ) Supplier Device Package: SOT-23F Test Condition: 25°C Part Status: Active |
на замовлення 138000 шт: термін постачання 21-31 дні (днів) |
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TCS40DLR,LF | Toshiba Semiconductor and Storage |
Description: MAGNETIC SWITCH OMNIPOLAR SOT23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 5.5V Technology: Hall Effect Sensing Range: ±4.4mT Trip, ±0.9mT Release Current - Output (Max): 5mA Current - Supply (Max): 1.6mA (Typ) Supplier Device Package: SOT-23F Test Condition: 25°C Part Status: Active |
на замовлення 7767 шт: термін постачання 21-31 дні (днів) |
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TCS40DPR,LF | Toshiba Semiconductor and Storage |
Description: MAGNETIC SWITCH OMNIPOLAR SOT23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 5.5V Technology: Hall Effect Sensing Range: ±4.4mT Trip, ±0.9mT Release Current - Output (Max): 5mA Current - Supply (Max): 1.6mA (Typ) Supplier Device Package: SOT-23F Test Condition: 25°C Part Status: Active |
на замовлення 139726 шт: термін постачання 21-31 дні (днів) |
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TPHR8504PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V Power Dissipation (Max): 1W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TPHR8504PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V Power Dissipation (Max): 1W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V |
на замовлення 2585 шт: термін постачання 21-31 дні (днів) |
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74LCX540FT(AE) | Toshiba Semiconductor and Storage |
Description: IC INVERTER 8-INPUT 20TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LCX573FT(AE) | Toshiba Semiconductor and Storage |
Description: IC LATCH OCTAL D-TYPE 20TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VHC125FT | Toshiba Semiconductor and Storage |
Description: IC BUFF NON-INVERT 5.5V 14-TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 14-TSSOP Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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74VHC139FT | Toshiba Semiconductor and Storage |
Description: IC DECODER/DEMUX 1X2:4 16-TSSOPPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 2:4 Type: Decoder/Demultiplexer Voltage - Supply: 2V ~ 5.5V Independent Circuits: 2 Current - Output High, Low: 8mA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VHC373FT(BJ) | Toshiba Semiconductor and Storage |
Description: IC LATCH OCTAL D-TYPE 20TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SC6076(TE16L1,NV) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 80V 3A PW-MOLDPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: PW-MOLD Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 10 W |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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2SC6076(TE16L1,NV) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 80V 3A PW-MOLDPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: PW-MOLD Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 10 W |
на замовлення 2259 шт: термін постачання 21-31 дні (днів) |
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TPWR8503NL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 150A 8DSOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V Power Dissipation (Max): 800mW (Ta), 142W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 8-DSOP Advance Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TPWR8004PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8DSOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V Power Dissipation (Max): 1W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-DSOP Advance Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPWR8503NL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 150A 8DSOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V Power Dissipation (Max): 800mW (Ta), 142W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 8-DSOP Advance Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V |
на замовлення 4914 шт: термін постачання 21-31 дні (днів) |
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TPWR8004PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8DSOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V Power Dissipation (Max): 1W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-DSOP Advance Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V |
на замовлення 8504 шт: термін постачання 21-31 дні (днів) |
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TCR5AM11,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.1V 500MA 5DFNB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCR5AM11,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.1V 500MA 5DFNB |
на замовлення 3587 шт: термін постачання 21-31 дні (днів) |
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SSM3J133TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 5.5A UFMPackaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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SSM6N56FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.8A ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
на замовлення 32000 шт: термін постачання 21-31 дні (днів) |
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DF2B7M2SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 20VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 40W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DF2B7SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.3VWM 16VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 45W Power Line Protection: No |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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DF2S6.8UCT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 19VWM 22VC |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DF2S6.8UFS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 19VWM 22VC |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SSM3K337R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 38V 2A SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.7V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 38 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SSM3J133TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 5.5A UFMPackaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
на замовлення 57692 шт: термін постачання 21-31 дні (днів) |
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SSM6N56FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.8A ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
на замовлення 32255 шт: термін постачання 21-31 дні (днів) |
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DF2B7M2SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 20VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 40W Power Line Protection: No |
на замовлення 9095 шт: термін постачання 21-31 дні (днів) |
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DF2B7SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.3VWM 16VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 45W Power Line Protection: No |
на замовлення 25293 шт: термін постачання 21-31 дні (днів) |
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DF2S6.8UCT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 19VWM 22VC |
на замовлення 19630 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DF2S6.8UFS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 19VWM 22VC |
на замовлення 3943 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SSM3K337R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 38V 2A SOT23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.7V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 38 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V |
на замовлення 12304 шт: термін постачання 21-31 дні (днів) |
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DF2S6.8UCT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 19VWM 22VC |
на замовлення 19630 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DF2S6.8UFS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 19VWM 22VC |
на замовлення 3943 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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2SB906-Y(TE16L1,NQ | Toshiba Semiconductor and Storage |
Description: TRANS PNP 60V 3A PW-MOLDPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 9MHz Supplier Device Package: PW-MOLD Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LCX00FT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 10 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LCX04FT(AE) | Toshiba Semiconductor and Storage |
Description: IC INVERTER HEX 14TSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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74LCX05FT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14TSSOPPackaging: Tape & Reel (TR) Features: Open Drain Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: -, 32mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Number of Circuits: 6 Current - Quiescent (Max): 10 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
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74LCX07FT | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 5.5V 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: 14-TSSOP Part Status: Active |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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74LCX126FT(AE) | Toshiba Semiconductor and Storage |
Description: IC BUS BUFFER QDLV N-INV 14TSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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CTS05S30,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 500MA CST2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 55pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA Current - Reverse Leakage @ Vr: 150 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CTS05S40,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 500MA CST2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 42pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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CTS520,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 200MA CST2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 16pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CTS521,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 200MA CST2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 25pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 30 µA @ 30 V |
на замовлення 140000 шт: термін постачання 21-31 дні (днів) |
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CUS05S30,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 500MA USCPackaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 55pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA Current - Reverse Leakage @ Vr: 150 µA @ 10 V |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
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CUS05S40,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 500MA USCPackaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 42pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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| TL1WK-WH1,L |
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Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1WK-DW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1WK-LL1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Description: LED LETERAS WARM WHT 2700K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1WK-LW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1WK-NT1,L |
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Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5700K 2SMD
Description: LED LETERAS COOL WHT 5700K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1WK-NW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1WK-WH1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1WK-DW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1WK-LL1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Description: LED LETERAS WARM WHT 2700K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1WK-LW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1WK-NT1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5700K 2SMD
Description: LED LETERAS COOL WHT 5700K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1WK-NW1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TL1WK-WH1,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
| TCS40DLR,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.41 грн |
| 6000+ | 5.91 грн |
| TCS40DPR,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
на замовлення 138000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.41 грн |
| 6000+ | 5.91 грн |
| 9000+ | 5.77 грн |
| 15000+ | 5.26 грн |
| 21000+ | 5.16 грн |
| 30000+ | 5.06 грн |
| 75000+ | 4.74 грн |
| TCS40DLR,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
на замовлення 7767 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.25 грн |
| 32+ | 10.07 грн |
| 34+ | 9.51 грн |
| 36+ | 8.24 грн |
| 50+ | 7.78 грн |
| 100+ | 7.36 грн |
| 500+ | 6.43 грн |
| 1000+ | 6.13 грн |
| TCS40DPR,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
на замовлення 139726 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.25 грн |
| 32+ | 10.07 грн |
| 34+ | 9.51 грн |
| 36+ | 8.24 грн |
| 50+ | 7.78 грн |
| 100+ | 7.36 грн |
| 500+ | 6.43 грн |
| 1000+ | 6.13 грн |
| TPHR8504PL,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| TPHR8504PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
на замовлення 2585 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 164.14 грн |
| 10+ | 107.26 грн |
| 100+ | 76.32 грн |
| 500+ | 60.69 грн |
| 74LCX540FT(AE) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 8-INPUT 20TSSOP
Description: IC INVERTER 8-INPUT 20TSSOP
товару немає в наявності
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| 74LCX573FT(AE) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20TSSOP
Description: IC LATCH OCTAL D-TYPE 20TSSOP
товару немає в наявності
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од. на суму грн.
| 74VHC125FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFF NON-INVERT 5.5V 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Part Status: Active
Description: IC BUFF NON-INVERT 5.5V 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 8.05 грн |
| 5000+ | 7.51 грн |
| 74VHC139FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
товару немає в наявності
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од. на суму грн.
| 74VHC373FT(BJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20TSSOP
Description: IC LATCH OCTAL D-TYPE 20TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| 2SC6076(TE16L1,NV) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 16.87 грн |
| 2SC6076(TE16L1,NV) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
на замовлення 2259 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.14 грн |
| 10+ | 39.71 грн |
| 100+ | 25.81 грн |
| 500+ | 18.59 грн |
| 1000+ | 16.78 грн |
| TPWR8503NL,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
товару немає в наявності
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од. на суму грн.
| TPWR8004PL,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 103.60 грн |
| TPWR8503NL,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
на замовлення 4914 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 183.73 грн |
| 10+ | 115.67 грн |
| 100+ | 80.62 грн |
| 500+ | 75.62 грн |
| TPWR8004PL,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
на замовлення 8504 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 190.27 грн |
| 10+ | 132.03 грн |
| 100+ | 110.71 грн |
| 500+ | 103.28 грн |
| TCR5AM11,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 500MA 5DFNB
Description: IC REG LINEAR 1.1V 500MA 5DFNB
товару немає в наявності
В кошику
од. на суму грн.
| TCR5AM11,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 500MA 5DFNB
Description: IC REG LINEAR 1.1V 500MA 5DFNB
на замовлення 3587 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.66 грн |
| 12+ | 27.05 грн |
| 25+ | 25.29 грн |
| 100+ | 18.98 грн |
| 250+ | 17.62 грн |
| 500+ | 14.91 грн |
| 1000+ | 11.33 грн |
| 2500+ | 10.33 грн |
| SSM3J133TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.53 грн |
| 6000+ | 7.82 грн |
| 9000+ | 6.58 грн |
| 15000+ | 6.09 грн |
| 21000+ | 5.93 грн |
| SSM6N56FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 4.98 грн |
| 8000+ | 4.11 грн |
| 12000+ | 4.04 грн |
| 20000+ | 3.72 грн |
| 28000+ | 3.57 грн |
| DF2B7M2SL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DF2B7SL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.95 грн |
| 20000+ | 1.50 грн |
| DF2S6.8UCT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF2S6.8UFS,L3M |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
на замовлення 12 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SSM3K337R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.01 грн |
| 6000+ | 10.06 грн |
| 9000+ | 9.34 грн |
| SSM3J133TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
на замовлення 57692 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.48 грн |
| 14+ | 24.14 грн |
| 100+ | 15.40 грн |
| 500+ | 10.91 грн |
| 1000+ | 9.76 грн |
| SSM6N56FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 32255 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.50 грн |
| 21+ | 15.41 грн |
| 100+ | 5.48 грн |
| 500+ | 5.04 грн |
| 1000+ | 4.93 грн |
| DF2B7M2SL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
на замовлення 9095 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.50 грн |
| 20+ | 16.43 грн |
| 100+ | 7.99 грн |
| 500+ | 6.25 грн |
| 1000+ | 4.35 грн |
| 2000+ | 3.77 грн |
| 5000+ | 3.44 грн |
| DF2B7SL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
на замовлення 25293 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 8.98 грн |
| 52+ | 6.05 грн |
| 120+ | 2.63 грн |
| 500+ | 2.32 грн |
| 1000+ | 2.18 грн |
| 2000+ | 2.11 грн |
| 5000+ | 2.01 грн |
| DF2S6.8UCT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
на замовлення 19630 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF2S6.8UFS,L3M |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
на замовлення 3943 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SSM3K337R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
на замовлення 12304 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.66 грн |
| 12+ | 26.89 грн |
| 100+ | 18.68 грн |
| 500+ | 13.69 грн |
| 1000+ | 11.13 грн |
| DF2S6.8UCT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
на замовлення 19630 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF2S6.8UFS,L3M |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
на замовлення 3943 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| 2SB906-Y(TE16L1,NQ |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 60V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| 74LCX00FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
товару немає в наявності
В кошику
од. на суму грн.
| 74LCX04FT(AE) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER HEX 14TSSOP
Description: IC INVERTER HEX 14TSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| 74LCX05FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 9.93 грн |
| 5000+ | 8.98 грн |
| 12500+ | 8.40 грн |
| 74LCX07FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 14-TSSOP
Part Status: Active
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 14-TSSOP
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 10.86 грн |
| 5000+ | 9.47 грн |
| 7500+ | 8.97 грн |
| 12500+ | 7.90 грн |
| 17500+ | 7.59 грн |
| 74LCX126FT(AE) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS BUFFER QDLV N-INV 14TSSOP
Description: IC BUS BUFFER QDLV N-INV 14TSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| CTS05S30,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA
Current - Reverse Leakage @ Vr: 150 µA @ 10 V
Description: DIODE SCHOTTKY 30V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA
Current - Reverse Leakage @ Vr: 150 µA @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| CTS05S40,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Description: DIODE SCHOTTKY 40V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.19 грн |
| CTS520,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| CTS521,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
на замовлення 140000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.64 грн |
| 20000+ | 1.44 грн |
| 30000+ | 1.37 грн |
| CUS05S30,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA
Current - Reverse Leakage @ Vr: 150 µA @ 10 V
Description: DIODE SCHOTTKY 30V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA
Current - Reverse Leakage @ Vr: 150 µA @ 10 V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.74 грн |
| 6000+ | 2.47 грн |
| 15000+ | 2.26 грн |
| 30000+ | 2.21 грн |
| CUS05S40,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Description: DIODE SCHOTTKY 40V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.91 грн |
| 6000+ | 2.70 грн |
| 9000+ | 2.61 грн |
| 15000+ | 2.44 грн |
| 21000+ | 2.36 грн |
| 30000+ | 2.32 грн |





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