Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13529) > Сторінка 98 з 226
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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TLP293-4(4LGBTRE | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 3494 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(GB-TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 79234 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(LA-TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 3390 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(LA-TR,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 2212 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(LGBTP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 19863 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(LGBTR,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 8343 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(MBGBTPE | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 |
на замовлення 9305 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLP293-4(MBHATLE | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 |
на замовлення 5026 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLP293-4(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 81692 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 3805 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(V4GBTPE | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 24675 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(V4GBTRE | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 2175 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(V4LATPE | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 3946 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(V4LATRE | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(V4-TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 5750 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(V4-TR,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 6473 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(MBHATLE | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 |
на замовлення 5026 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TH58NVG3S0HTAI0 | Toshiba Semiconductor and Storage |
Description: IC EEPROM 8GBIT 25NS 48TSOP |
на замовлення 89 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62781FNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC LED DRIVER LINEAR 40MA 20SSOPVoltage - Supply (Max): 5.5V Voltage - Supply (Min): 3V Supplier Device Package: 20-SSOP Internal Switch(s): Yes Current - Output / Channel: 40mA Operating Temperature: -40°C ~ 85°C (TA) Type: Linear Number of Outputs: 9 Mounting Type: Surface Mount Voltage - Output: 28V Package / Case: 20-LSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TJ20A10M3(STA4,Q,M | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 100V 20A TO220SIS-3 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||
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TJ9A10M3,S4Q(M | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 100V 9A TO220SIS-3 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||
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TJ11A10M3,S5Q(M | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 100V 11A TO220SIS-3 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||
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TB2941HQ(O) | Toshiba Semiconductor and Storage |
Description: IC AMP BTL AUDIO 4CH |
на замовлення 846 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TB62781FNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC LED DRIVER LINEAR 40MA 20SSOPVoltage - Supply (Max): 5.5V Voltage - Supply (Min): 3V Supplier Device Package: 20-SSOP Internal Switch(s): Yes Current - Output / Channel: 40mA Operating Temperature: -40°C ~ 85°C (TA) Type: Linear Number of Outputs: 9 Mounting Type: Surface Mount Voltage - Output: 28V Package / Case: 20-LSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 5625 шт: термін постачання 21-31 дні (днів) |
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1SS427,L3M | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 80V 100MA SOD923Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-923 Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.6 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOD-923 Packaging: Tape & Reel (TR) |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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CBS10S30,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 1A CST2B |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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CBS10S40,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1A CST2BCapacitance @ Vr, F: 120pF @ 0V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 150 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: CST2B Current - Average Rectified (Io): 1A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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DF2B12M2SC,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 8VWM 18VC SC2 |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||
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SSM3K15ACT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA CST3Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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SSM6K403TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 4.2A UF6 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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T2N7002AK,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 200MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 371240 шт: термін постачання 21-31 дні (днів) |
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TC4W53FU,LF | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX DUAL 1X1 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 160Ohm Supplier Device Package: 8-SSOP Voltage - Supply, Single (V+): 3V ~ 18V Part Status: Active Number of Channels: 2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TCR5AM10,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1V 500MA 5DFNBCurrent - Supply (Max): 68 µA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Voltage Dropout (Max): 0.25V @ 500mA PSRR: 70dB ~ 40dB (1kHz ~ 10Hz) Control Features: Enable Voltage - Output (Min/Fixed): 1V Supplier Device Package: 5-DFNB (1.2x1.2) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 55 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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1SS427,L3M | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 80V 100MA SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 81387 шт: термін постачання 21-31 дні (днів) |
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CBS10S30,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 1A CST2B |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CBS10S40,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1A CST2BPackaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 120pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: CST2B Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF2B12M2SC,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 8VWM 18VC SC2 |
на замовлення 9850 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SSM3K15ACT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA CST3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
на замовлення 4746 шт: термін постачання 21-31 дні (днів) |
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SSM6K403TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 4.2A UF6 |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SSM6K411TU(TE85L,F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 10A |
на замовлення 5509 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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T2N7002AK,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 200MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 371296 шт: термін постачання 21-31 дні (днів) |
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TC4W53FU,LF | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX DUAL 1X1 8SOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 160Ohm Supplier Device Package: 8-SSOP Voltage - Supply, Single (V+): 3V ~ 18V Part Status: Active Number of Channels: 2 |
на замовлення 1895 шт: термін постачання 21-31 дні (днів) |
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TCR5AM10,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1V 500MA 5DFNBCurrent - Supply (Max): 68 µA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Voltage Dropout (Max): 0.25V @ 500mA PSRR: 70dB ~ 40dB (1kHz ~ 10Hz) Control Features: Enable Voltage - Output (Min/Fixed): 1V Supplier Device Package: 5-DFNB (1.2x1.2) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 55 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF2B12M2SC,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 8VWM 18VC SC2 |
на замовлення 9850 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SSM6K411TU(TE85L,F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 10A |
на замовлення 5509 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SSM6K411TU(TE85L,F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 10A |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TPH1R712MD,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 60A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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TPN4R712MD,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 36A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPH1R712MD,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 60A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V |
на замовлення 28063 шт: термін постачання 21-31 дні (днів) |
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TPN4R712MD,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 36A 8TSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V |
на замовлення 9110 шт: термін постачання 21-31 дні (днів) |
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TL1L4-DW0,L4A5B | Toshiba Semiconductor and Storage |
Description: POWER LED WHT 6500K 3535 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TL1L4-NT0,L4A5B | Toshiba Semiconductor and Storage |
Description: POWER LED WHT 5700K 3535 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TL1L4-NW0,L4A5B | Toshiba Semiconductor and Storage |
Description: POWER LED WHT 5000K 3535 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TL1L4-WH0,L4A5B | Toshiba Semiconductor and Storage |
Description: POWER LED WHT 4000K 3535 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TL2WU-DWJ,L | Toshiba Semiconductor and Storage |
Description: LED WHITE 65MW CSP 0603 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
TL1L4-DW0,L4A5B | Toshiba Semiconductor and Storage |
Description: POWER LED WHT 6500K 3535 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TL1L4-NT0,L4A5B | Toshiba Semiconductor and Storage |
Description: POWER LED WHT 5700K 3535 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TL1L4-NW0,L4A5B | Toshiba Semiconductor and Storage |
Description: POWER LED WHT 5000K 3535 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TL1L4-WH0,L4A5B | Toshiba Semiconductor and Storage |
Description: POWER LED WHT 4000K 3535 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TL2WU-DWJ,L | Toshiba Semiconductor and Storage |
Description: LED WHITE 65MW CSP 0603 |
товару немає в наявності |
В кошику од. на суму грн. |
| TLP293-4(4LGBTRE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 3494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 78.58 грн |
| 100+ | 59.43 грн |
| 500+ | 47.81 грн |
| 1000+ | 45.22 грн |
| TLP293-4(GB-TP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 79234 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.79 грн |
| 10+ | 80.37 грн |
| 100+ | 60.80 грн |
| 500+ | 48.92 грн |
| 1000+ | 46.26 грн |
| TLP293-4(LA-TP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 3390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.79 грн |
| 10+ | 80.37 грн |
| 100+ | 60.80 грн |
| 500+ | 48.92 грн |
| 1000+ | 46.26 грн |
| TLP293-4(LA-TR,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 2212 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 78.58 грн |
| 100+ | 59.43 грн |
| 500+ | 47.81 грн |
| 1000+ | 45.22 грн |
| TLP293-4(LGBTP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 19863 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.79 грн |
| 10+ | 80.37 грн |
| 100+ | 60.80 грн |
| 500+ | 48.92 грн |
| 1000+ | 46.26 грн |
| TLP293-4(LGBTR,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 8343 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.79 грн |
| 10+ | 80.37 грн |
| 100+ | 60.80 грн |
| 500+ | 48.92 грн |
| 1000+ | 46.26 грн |
| TLP293-4(MBGBTPE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Description: OPTOISOLATOR 3.75KV TRANS SO16
на замовлення 9305 шт:
термін постачання 21-31 дні (днів)
| TLP293-4(MBHATLE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Description: OPTOISOLATOR 3.75KV TRANS SO16
на замовлення 5026 шт:
термін постачання 21-31 дні (днів)
| TLP293-4(TP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 81692 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.79 грн |
| 10+ | 80.37 грн |
| 100+ | 60.80 грн |
| 500+ | 48.92 грн |
| 1000+ | 46.26 грн |
| TLP293-4(TPR,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 3805 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 78.58 грн |
| 100+ | 59.43 грн |
| 500+ | 47.81 грн |
| 1000+ | 45.22 грн |
| TLP293-4(V4GBTPE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 24675 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.79 грн |
| 10+ | 80.37 грн |
| 100+ | 60.80 грн |
| 500+ | 48.92 грн |
| 1000+ | 46.26 грн |
| TLP293-4(V4GBTRE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 2175 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 78.58 грн |
| 100+ | 59.43 грн |
| 500+ | 47.81 грн |
| 1000+ | 45.22 грн |
| TLP293-4(V4LATPE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 3946 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.79 грн |
| 10+ | 80.37 грн |
| 100+ | 60.80 грн |
| 500+ | 48.92 грн |
| 1000+ | 46.26 грн |
| TLP293-4(V4LATRE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 78.58 грн |
| 100+ | 59.43 грн |
| 500+ | 47.81 грн |
| 1000+ | 45.22 грн |
| TLP293-4(V4-TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 5750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 78.58 грн |
| 100+ | 59.43 грн |
| 500+ | 47.81 грн |
| 1000+ | 45.22 грн |
| TLP293-4(V4-TR,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 6473 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 78.58 грн |
| 100+ | 59.43 грн |
| 500+ | 47.81 грн |
| 1000+ | 45.22 грн |
| TLP293-4(MBHATLE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Description: OPTOISOLATOR 3.75KV TRANS SO16
на замовлення 5026 шт:
термін постачання 21-31 дні (днів)
| TH58NVG3S0HTAI0 |
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Виробник: Toshiba Semiconductor and Storage
Description: IC EEPROM 8GBIT 25NS 48TSOP
Description: IC EEPROM 8GBIT 25NS 48TSOP
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
| TB62781FNG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 40MA 20SSOP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 20-SSOP
Internal Switch(s): Yes
Current - Output / Channel: 40mA
Operating Temperature: -40°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 9
Mounting Type: Surface Mount
Voltage - Output: 28V
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC LED DRIVER LINEAR 40MA 20SSOP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 20-SSOP
Internal Switch(s): Yes
Current - Output / Channel: 40mA
Operating Temperature: -40°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 9
Mounting Type: Surface Mount
Voltage - Output: 28V
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 63.42 грн |
| TJ20A10M3(STA4,Q,M |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 100V 20A TO220SIS-3
Description: MOSFET P-CH 100V 20A TO220SIS-3
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| TJ9A10M3,S4Q(M |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 100V 9A TO220SIS-3
Description: MOSFET P-CH 100V 9A TO220SIS-3
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| TJ11A10M3,S5Q(M |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 100V 11A TO220SIS-3
Description: MOSFET P-CH 100V 11A TO220SIS-3
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| TB2941HQ(O) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC AMP BTL AUDIO 4CH
Description: IC AMP BTL AUDIO 4CH
на замовлення 846 шт:
термін постачання 21-31 дні (днів)
| TB62781FNG,C8,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 40MA 20SSOP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 20-SSOP
Internal Switch(s): Yes
Current - Output / Channel: 40mA
Operating Temperature: -40°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 9
Mounting Type: Surface Mount
Voltage - Output: 28V
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC LED DRIVER LINEAR 40MA 20SSOP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 20-SSOP
Internal Switch(s): Yes
Current - Output / Channel: 40mA
Operating Temperature: -40°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 9
Mounting Type: Surface Mount
Voltage - Output: 28V
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 5625 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 138.71 грн |
| 10+ | 119.92 грн |
| 25+ | 113.10 грн |
| 100+ | 90.42 грн |
| 250+ | 84.91 грн |
| 500+ | 74.29 грн |
| 1000+ | 60.55 грн |
| 1SS427,L3M |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SOD923
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-923
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 80V 100MA SOD923
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-923
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Tape & Reel (TR)
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 1.87 грн |
| 20000+ | 1.78 грн |
| 30000+ | 1.74 грн |
| 50000+ | 1.49 грн |
| CBS10S30,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1A CST2B
Description: DIODE SCHOTTKY 20V 1A CST2B
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| CBS10S40,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CST2B
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: CST2B
Current - Average Rectified (Io): 1A
Description: DIODE SCHOTTKY 40V 1A CST2B
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: CST2B
Current - Average Rectified (Io): 1A
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DF2B12M2SC,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SC2
Description: TVS DIODE 8VWM 18VC SC2
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| SSM3K15ACT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Description: MOSFET N-CH 30V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SSM6K403TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.2A UF6
Description: MOSFET N-CH 20V 4.2A UF6
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| T2N7002AK,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 371240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.10 грн |
| 6000+ | 1.80 грн |
| 9000+ | 1.68 грн |
| 15000+ | 1.46 грн |
| 21000+ | 1.39 грн |
| 30000+ | 1.32 грн |
| TC4W53FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TCR5AM10,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 500MA 5DFNB
Current - Supply (Max): 68 µA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 1V 500MA 5DFNB
Current - Supply (Max): 68 µA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| 1SS427,L3M |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE STANDARD 80V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 81387 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.62 грн |
| 39+ | 7.84 грн |
| 100+ | 5.46 грн |
| 500+ | 3.75 грн |
| 1000+ | 3.26 грн |
| 2000+ | 2.90 грн |
| 5000+ | 2.48 грн |
| CBS10S30,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1A CST2B
Description: DIODE SCHOTTKY 20V 1A CST2B
товару немає в наявності
В кошику
од. на суму грн.
| CBS10S40,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CST2B
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A CST2B
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| DF2B12M2SC,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SC2
Description: TVS DIODE 8VWM 18VC SC2
на замовлення 9850 шт:
термін постачання 21-31 дні (днів)
| SSM3K15ACT,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Description: MOSFET N-CH 30V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
на замовлення 4746 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.60 грн |
| 28+ | 11.04 грн |
| 100+ | 6.87 грн |
| 500+ | 4.74 грн |
| 1000+ | 4.18 грн |
| 2000+ | 3.72 грн |
| SSM6K403TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.2A UF6
Description: MOSFET N-CH 20V 4.2A UF6
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
| SSM6K411TU(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 10A
Description: MOSFET N-CH 20V 10A
на замовлення 5509 шт:
термін постачання 21-31 дні (днів)
| T2N7002AK,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 371296 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.85 грн |
| 48+ | 6.34 грн |
| 100+ | 3.90 грн |
| 500+ | 2.65 грн |
| 1000+ | 2.32 грн |
| TC4W53FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.15 грн |
| 23+ | 13.51 грн |
| 25+ | 11.97 грн |
| 100+ | 9.66 грн |
| 250+ | 8.90 грн |
| 500+ | 8.44 грн |
| 1000+ | 7.94 грн |
| TCR5AM10,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 500MA 5DFNB
Current - Supply (Max): 68 µA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 1V 500MA 5DFNB
Current - Supply (Max): 68 µA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| DF2B12M2SC,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SC2
Description: TVS DIODE 8VWM 18VC SC2
на замовлення 9850 шт:
термін постачання 21-31 дні (днів)
| SSM6K411TU(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 10A
Description: MOSFET N-CH 20V 10A
на замовлення 5509 шт:
термін постачання 21-31 дні (днів)
| SSM6K411TU(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 10A
Description: MOSFET N-CH 20V 10A
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| TPH1R712MD,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 44.65 грн |
| 10000+ | 40.88 грн |
| TPN4R712MD,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 20.53 грн |
| TPH1R712MD,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
на замовлення 28063 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.06 грн |
| 10+ | 101.86 грн |
| 100+ | 69.27 грн |
| 500+ | 51.92 грн |
| 1000+ | 47.72 грн |
| 2000+ | 46.96 грн |
| TPN4R712MD,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
на замовлення 9110 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.01 грн |
| 10+ | 51.71 грн |
| 100+ | 34.07 грн |
| 500+ | 24.86 грн |
| 1000+ | 22.57 грн |
| 2000+ | 20.64 грн |
| TL1L4-DW0,L4A5B |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: POWER LED WHT 6500K 3535
Description: POWER LED WHT 6500K 3535
товару немає в наявності
В кошику
од. на суму грн.
| TL1L4-NT0,L4A5B |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5700K 3535
Description: POWER LED WHT 5700K 3535
товару немає в наявності
В кошику
од. на суму грн.
| TL1L4-NW0,L4A5B |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5000K 3535
Description: POWER LED WHT 5000K 3535
товару немає в наявності
В кошику
од. на суму грн.
| TL1L4-WH0,L4A5B |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: POWER LED WHT 4000K 3535
Description: POWER LED WHT 4000K 3535
товару немає в наявності
В кошику
од. на суму грн.
| TL2WU-DWJ,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED WHITE 65MW CSP 0603
Description: LED WHITE 65MW CSP 0603
товару немає в наявності
В кошику
од. на суму грн.
| TL1L4-DW0,L4A5B |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: POWER LED WHT 6500K 3535
Description: POWER LED WHT 6500K 3535
товару немає в наявності
В кошику
од. на суму грн.
| TL1L4-NT0,L4A5B |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5700K 3535
Description: POWER LED WHT 5700K 3535
товару немає в наявності
В кошику
од. на суму грн.
| TL1L4-NW0,L4A5B |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5000K 3535
Description: POWER LED WHT 5000K 3535
товару немає в наявності
В кошику
од. на суму грн.
| TL1L4-WH0,L4A5B |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: POWER LED WHT 4000K 3535
Description: POWER LED WHT 4000K 3535
товару немає в наявності
В кошику
од. на суму грн.
| TL2WU-DWJ,L |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED WHITE 65MW CSP 0603
Description: LED WHITE 65MW CSP 0603
товару немає в наявності
В кошику
од. на суму грн.








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