| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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IRFP460LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
на замовлення 220 шт: термін постачання 14-30 дні (днів) |
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IRFP460PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
на замовлення 1050 шт: термін постачання 14-30 дні (днів) |
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IRF510PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Pulsed drain current: 20A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: THT Gate charge: 8.3nC Kind of package: tube Kind of channel: enhancement |
на замовлення 577 шт: термін постачання 14-30 дні (днів) |
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IRF510SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Pulsed drain current: 20A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: tube Kind of channel: enhancement |
на замовлення 252 шт: термін постачання 14-30 дні (днів) |
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IRF510STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Pulsed drain current: 20A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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IRF520PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.5A Pulsed drain current: 37A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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6N137-X007T | VISHAY |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; Uce: 7V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: logic Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 27ns Turn-off time: 7ns Output voltage: 7V Collector-emitter voltage: 7V Insulation voltage: 5kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS14-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 13 inch reel Max. forward impulse current: 40A Manufacturer standard package: 7500pcs. Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 1A Kind of package: 13 inch reel Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying Mounting: SMD |
на замовлення 3018 шт: термін постачання 14-30 дні (днів) |
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SS14-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 7 inch reel Max. forward impulse current: 40A Manufacturer standard package: 1800pcs. Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 1A Kind of package: 7 inch reel Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying Mounting: SMD |
на замовлення 29963 шт: термін постачання 14-30 дні (днів) |
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SS14-M3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 7 inch reel Max. forward impulse current: 40A Manufacturer standard package: 1800pcs. Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 1A Kind of package: 7 inch reel Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MB6S-E3/80 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.5A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.5A Max. forward impulse current: 35A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 2560 шт: термін постачання 14-30 дні (днів) |
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CRCW06034K70FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 4.7kΩ; SMD; 0603; 0.1W; ±1%; CRCW0603; 75V Type of resistor: thick film Resistance: 4.7kΩ Mounting: SMD Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Case - inch: 0603 Case - mm: 1608 Manufacturer series: CRCW0603 |
на замовлення 360996 шт: термін постачання 14-30 дні (днів) |
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1.5KE100CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 100V; 10.9A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Mounting: THT Case: DO201 Semiconductor structure: bidirectional Kind of package: 13 inch reel Manufacturer series: 1.5KE Peak pulse power dissipation: 1.5kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 85.5V Leakage current: 1µA Breakdown voltage: 100V Max. forward impulse current: 10.9A |
на замовлення 355 шт: термін постачання 14-30 дні (днів) |
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SS24HE3_A/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 7 inch reel Mounting: SMD Max. forward impulse current: 75A Manufacturer standard package: 750pcs. Max. forward voltage: 0.5V Application: automotive industry Max. off-state voltage: 40V Load current: 2A Kind of package: 7 inch reel Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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HRC00FE1002WTNL | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x20mm; ±20% Type of capacitor: electrolytic Capacitance: 10µF Operating voltage: 450V DC Body dimensions: Ø12.5x20mm Tolerance: ±20% Service life: 10000h Operating temperature: -25...105°C Mounting: THT |
на замовлення 664 шт: термін постачання 14-30 дні (днів) |
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MAL204217109E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x30mm; ±20% Type of capacitor: electrolytic Capacitance: 10µF Operating voltage: 450V DC Body dimensions: Ø12.5x30mm Tolerance: ±20% Service life: 10000h Leads: axial Operating temperature: -40...85°C Height: 30mm Diameter: 12.5mm Mounting: THT |
на замовлення 24 шт: термін постачання 14-30 дні (днів) |
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MAL204272109E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; low ESR; THT; 10uF; 450VDC; Ø12.5x30mm Type of capacitor: electrolytic Capacitance: 10µF Operating voltage: 450V DC Body dimensions: Ø12.5x30mm Tolerance: ±20% Service life: 10000h Leads: axial Operating temperature: -40...105°C Height: 30mm Diameter: 12.5mm Mounting: THT Kind of capacitor: low ESR |
на замовлення 287 шт: термін постачання 14-30 дні (днів) |
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CRCW120610K0FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±1%; 200V; -55÷125°C Type of resistor: thick film Resistance: 10kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...125°C |
на замовлення 46522 шт: термін постачання 14-30 дні (днів) |
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CRCW120610K0FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 10kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 111409 шт: термін постачання 14-30 дні (днів) |
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CRCW120610K0JNEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷125°C Type of resistor: thick film Resistance: 10kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating voltage: 200V Operating temperature: -55...125°C |
на замовлення 5727 шт: термін постачання 14-30 дні (днів) |
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CRCW120610K0JNTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C Type of resistor: thick film Resistance: 10kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 17800 шт: термін постачання 14-30 дні (днів) |
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1N4001-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41; DO204AL Kind of package: 13 inch reel Max. forward voltage: 1.1V Manufacturer standard package: 5500pcs. Capacitance: 15pF |
на замовлення 6629 шт: термін постачання 14-30 дні (днів) |
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BAT54WS-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 0.6A Kind of package: 7 inch reel Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4004-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41; DO204AL Kind of package: 13 inch reel Max. forward voltage: 1.1V Capacitance: 15pF Manufacturer standard package: 5500pcs. |
на замовлення 10910 шт: термін постачання 14-30 дні (днів) |
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1N4004-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; Ammo Pack Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41; DO204AL Kind of package: Ammo Pack Max. forward voltage: 1.1V Capacitance: 15pF Manufacturer standard package: 3000pcs. |
на замовлення 24775 шт: термін постачання 14-30 дні (днів) |
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1N4004GP-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41; DO204AL Kind of package: 13 inch reel Max. forward voltage: 1.1V Reverse recovery time: 2µs Features of semiconductor devices: glass passivated Capacitance: 8pF Manufacturer standard package: 5500pcs. |
на замовлення 1535 шт: термін постачання 14-30 дні (днів) |
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IRF640PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1339 шт: термін постачання 14-30 дні (днів) |
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IRF640SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1072 шт: термін постачання 14-30 дні (днів) |
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IRF640STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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BAT54A-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Features of semiconductor devices: small signal Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Leakage current: 2µA Manufacturer standard package: 3000pcs. |
на замовлення 85 шт: термін постачання 14-30 дні (днів) |
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BAT54A-HE3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Features of semiconductor devices: small signal Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Leakage current: 2µA Manufacturer standard package: 3000pcs. Application: automotive industry |
на замовлення 550 шт: термін постачання 14-30 дні (днів) |
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BAT54S-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 0.24V Max. load current: 0.3A Kind of package: 7 inch reel Capacitance: 10pF Reverse recovery time: 5ns Max. forward impulse current: 0.6A Manufacturer standard package: 3000pcs. Power dissipation: 0.23W Features of semiconductor devices: small signal |
на замовлення 7961 шт: термін постачання 14-30 дні (днів) |
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BAT54S-HE3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 0.8V Kind of package: 7 inch reel Capacitance: 10pF Reverse recovery time: 5ns Max. forward impulse current: 0.6A Manufacturer standard package: 3000pcs. Power dissipation: 0.23W Features of semiconductor devices: small signal Application: automotive industry Leakage current: 2µA |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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IRFP240PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 12A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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T63XB103KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmersDescription: Potentiometer: mounting; 10kΩ; multiturn; 250mW; ±10%; linear; THT Type of potentiometer: mounting Resistance: 10kΩ Kind of potentiometer: multiturn Power: 0.25W Number of mechanical turns: 15 ±5 Tolerance: ±10% Characteristics: linear Manufacturer series: T63XB Body dimensions: 6.8x6.8x5mm Mounting: THT Potentiometer standard - inch: 1/4" Temperature coefficient: 100ppm/°C Number of electrical turns: 13 ±2 Track material: cermet Terminal pitch: 2.5x2.5mm IP rating: IP67 Torque: 1Ncm Operating temperature: -55...155°C Operating voltage: 250V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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T63YB103KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmersDescription: Potentiometer: mounting; 10kΩ; multiturn; 250mW; ±10%; linear; THT Type of potentiometer: mounting Resistance: 10kΩ Kind of potentiometer: multiturn Power: 0.25W Number of mechanical turns: 15 ±5 Tolerance: ±10% Characteristics: linear Manufacturer series: T63YB Body dimensions: 6.8x6.8x5mm Mounting: THT Potentiometer standard - inch: 1/4" Temperature coefficient: 100ppm/°C Number of electrical turns: 13 ±2 Track material: cermet Terminal pitch: 2.5x2.5mm IP rating: IP67 Torque: 1Ncm Operating temperature: -55...155°C Operating voltage: 250V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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T93XB103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear Type of potentiometer: mounting Resistance: 10kΩ Kind of potentiometer: multiturn Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93XB Track material: cermet Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5x2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Engineering PN: 64Z; 67Z; 3296Z IP rating: IP67 Torque: 1.5Ncm Operating temperature: -55...125°C Operating voltage: 250V |
на замовлення 860 шт: термін постачання 14-30 дні (днів) |
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T93YB103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear Type of potentiometer: mounting Resistance: 10kΩ Kind of potentiometer: multiturn Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93YB Track material: cermet Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5x2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Engineering PN: 64Y; 67Y; 3296Y IP rating: IP67 Torque: 1.5Ncm Operating temperature: -55...125°C Operating voltage: 250V |
на замовлення 2219 шт: термін постачання 14-30 дні (днів) |
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VS-36MT60 | VISHAY |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT Electrical mounting: THT Leads: connectors FASTON Max. off-state voltage: 0.6kV Load current: 35A Kind of package: bulk Leads dimensions: 6.3x0.8mm Case: D-63 Type of bridge rectifier: three-phase Max. forward impulse current: 475A Max. forward voltage: 1.19V Version: square |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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SIHB12N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of channel: enhancement Power dissipation: 147W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHB12N60ET1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of channel: enhancement Pulsed drain current: 27A Power dissipation: 147W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHF12N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of channel: enhancement Pulsed drain current: 27A Power dissipation: 33W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHP12N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of channel: enhancement Pulsed drain current: 27A Power dissipation: 147W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFP22N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 277W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFP250PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
на замовлення 419 шт: термін постачання 14-30 дні (днів) |
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IRFP260PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 29A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFP264PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 24A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE6.8CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 2mA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Kind of package: 13 inch reel Technology: TransZorb® |
на замовлення 479 шт: термін постачання 14-30 дні (днів) |
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SS34-E3/57T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel Case: SMC Mounting: SMD Max. forward impulse current: 100A Manufacturer standard package: 850pcs. Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 3A Kind of package: 7 inch reel Semiconductor structure: single diode Type of diode: Schottky rectifying |
на замовлення 1942 шт: термін постачання 14-30 дні (днів) |
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| SS34-E3/9AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel Case: SMC Mounting: SMD Max. forward impulse current: 100A Manufacturer standard package: 3500pcs. Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 3A Kind of package: 13 inch reel Semiconductor structure: single diode Leakage current: 20mA Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR20100CT-E3/4W | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Max. forward impulse current: 150A Kind of package: tube Manufacturer standard package: 50pcs. Heatsink thickness: 1.14...1.39mm |
на замовлення 54 шт: термін постачання 14-30 дні (днів) |
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2N7002K-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Pulsed drain current: 0.8A Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 0.14W Gate charge: 0.6nC Version: ESD |
на замовлення 2822 шт: термін постачання 14-30 дні (днів) |
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SIHB15N65E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 34W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 38A Gate charge: 96nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHF15N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 38A Gate charge: 96nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHP15N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 34W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 38A Gate charge: 96nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS16-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Kind of package: 13 inch reel Semiconductor structure: single diode Leakage current: 5mA Type of diode: Schottky rectifying Max. forward impulse current: 40A Manufacturer standard package: 7500pcs. Max. forward voltage: 0.75V |
на замовлення 7093 шт: термін постачання 14-30 дні (днів) |
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SS16-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Kind of package: 7 inch reel Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 40A Manufacturer standard package: 1800pcs. Max. forward voltage: 0.75V |
на замовлення 5034 шт: термін постачання 14-30 дні (днів) |
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SS16HE3_B/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Case: SMA Mounting: SMD Application: automotive industry Max. off-state voltage: 60V Load current: 1A Kind of package: 7 inch reel Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 40A Manufacturer standard package: 1800pcs. Max. forward voltage: 0.75V |
на замовлення 3865 шт: термін постачання 14-30 дні (днів) |
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IRF840PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 2331 шт: термін постачання 14-30 дні (днів) |
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GRC00JG3321E00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 3300uF; 25VDC; Ø16x25mm; ±20%; 2000h Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3mF Operating voltage: 25V DC Body dimensions: Ø16x25mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. |
| IRFP460LCPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 220 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 539.20 грн |
| 5+ | 411.73 грн |
| 6+ | 169.44 грн |
| 16+ | 160.12 грн |
| IRFP460PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1050 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 456.18 грн |
| 5+ | 345.65 грн |
| 6+ | 163.51 грн |
| 17+ | 155.04 грн |
| IRF510PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 577 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 107.66 грн |
| 10+ | 53.88 грн |
| 31+ | 31.52 грн |
| 85+ | 29.82 грн |
| IRF510SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 252 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 131.38 грн |
| 10+ | 74.81 грн |
| 30+ | 32.62 грн |
| 82+ | 30.84 грн |
| IRF510STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRF520PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Pulsed drain current: 37A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Pulsed drain current: 37A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| 6N137-X007T |
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Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; Uce: 7V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: logic
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 27ns
Turn-off time: 7ns
Output voltage: 7V
Collector-emitter voltage: 7V
Insulation voltage: 5kV
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; Uce: 7V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: logic
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 27ns
Turn-off time: 7ns
Output voltage: 7V
Collector-emitter voltage: 7V
Insulation voltage: 5kV
товару немає в наявності
В кошику
од. на суму грн.
| SS14-E3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 13 inch reel
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 13 inch reel
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 3018 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.02 грн |
| 24+ | 18.05 грн |
| 29+ | 15.08 грн |
| 100+ | 11.61 грн |
| 225+ | 4.30 грн |
| 618+ | 4.07 грн |
| SS14-E3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 7 inch reel
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 7 inch reel
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 29963 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.93 грн |
| 22+ | 19.32 грн |
| 50+ | 12.45 грн |
| 100+ | 11.45 грн |
| 208+ | 4.64 грн |
| 572+ | 4.39 грн |
| 1800+ | 4.22 грн |
| SS14-M3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 7 inch reel
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; 7 inch reel
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| MB6S-E3/80 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.5A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.5A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 2560 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.44 грн |
| 14+ | 32.53 грн |
| 25+ | 28.21 грн |
| 50+ | 25.16 грн |
| 90+ | 10.84 грн |
| 246+ | 10.25 грн |
| CRCW06034K70FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 4.7kΩ; SMD; 0603; 0.1W; ±1%; CRCW0603; 75V
Type of resistor: thick film
Resistance: 4.7kΩ
Mounting: SMD
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Case - inch: 0603
Case - mm: 1608
Manufacturer series: CRCW0603
Category: SMD resistors
Description: Resistor: thick film; 4.7kΩ; SMD; 0603; 0.1W; ±1%; CRCW0603; 75V
Type of resistor: thick film
Resistance: 4.7kΩ
Mounting: SMD
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Case - inch: 0603
Case - mm: 1608
Manufacturer series: CRCW0603
на замовлення 360996 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 459+ | 0.99 грн |
| 2223+ | 0.19 грн |
| 3000+ | 0.16 грн |
| 5000+ | 0.14 грн |
| 7962+ | 0.12 грн |
| 20000+ | 0.11 грн |
| 1.5KE100CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 10.9A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Mounting: THT
Case: DO201
Semiconductor structure: bidirectional
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 85.5V
Leakage current: 1µA
Breakdown voltage: 100V
Max. forward impulse current: 10.9A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 10.9A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Mounting: THT
Case: DO201
Semiconductor structure: bidirectional
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 85.5V
Leakage current: 1µA
Breakdown voltage: 100V
Max. forward impulse current: 10.9A
на замовлення 355 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 37.41 грн |
| 22+ | 20.16 грн |
| 48+ | 19.99 грн |
| 100+ | 18.21 грн |
| SS24HE3_A/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 75A
Manufacturer standard package: 750pcs.
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 75A
Manufacturer standard package: 750pcs.
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
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В кошику
од. на суму грн.
| HRC00FE1002WTNL |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x20mm; ±20%
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 450V DC
Body dimensions: Ø12.5x20mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -25...105°C
Mounting: THT
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x20mm; ±20%
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 450V DC
Body dimensions: Ø12.5x20mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -25...105°C
Mounting: THT
на замовлення 664 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.34 грн |
| 10+ | 47.27 грн |
| 37+ | 26.26 грн |
| 102+ | 24.82 грн |
| MAL204217109E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x30mm; ±20%
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 450V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Service life: 10000h
Leads: axial
Operating temperature: -40...85°C
Height: 30mm
Diameter: 12.5mm
Mounting: THT
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 450VDC; Ø12.5x30mm; ±20%
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 450V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Service life: 10000h
Leads: axial
Operating temperature: -40...85°C
Height: 30mm
Diameter: 12.5mm
Mounting: THT
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 438.84 грн |
| 5+ | 356.67 грн |
| 8+ | 135.55 грн |
| 20+ | 127.93 грн |
| MAL204272109E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 10uF; 450VDC; Ø12.5x30mm
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 450V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Service life: 10000h
Leads: axial
Operating temperature: -40...105°C
Height: 30mm
Diameter: 12.5mm
Mounting: THT
Kind of capacitor: low ESR
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 10uF; 450VDC; Ø12.5x30mm
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 450V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Service life: 10000h
Leads: axial
Operating temperature: -40...105°C
Height: 30mm
Diameter: 12.5mm
Mounting: THT
Kind of capacitor: low ESR
на замовлення 287 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 441.58 грн |
| 4+ | 247.38 грн |
| 11+ | 233.82 грн |
| CRCW120610K0FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...125°C
на замовлення 46522 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 95+ | 4.84 грн |
| 228+ | 1.86 грн |
| 241+ | 1.76 грн |
| 275+ | 1.54 грн |
| 376+ | 1.13 грн |
| 421+ | 1.01 грн |
| 532+ | 0.80 грн |
| 1000+ | 0.69 грн |
| 2513+ | 0.38 грн |
| CRCW120610K0FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 111409 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 878+ | 0.52 грн |
| 1129+ | 0.38 грн |
| 1257+ | 0.34 грн |
| 1475+ | 0.29 грн |
| 2000+ | 0.25 грн |
| 4000+ | 0.22 грн |
| CRCW120610K0JNEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷125°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷125°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...125°C
на замовлення 5727 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.39 грн |
| 152+ | 2.80 грн |
| 196+ | 2.17 грн |
| 239+ | 1.78 грн |
| 291+ | 1.46 грн |
| 500+ | 0.92 грн |
| 1000+ | 0.77 грн |
| 2500+ | 0.71 грн |
| CRCW120610K0JNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 10kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 17800 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.99 грн |
| 1000+ | 0.60 грн |
| 3500+ | 0.28 грн |
| 9600+ | 0.26 грн |
| 1N4001-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41; DO204AL
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Manufacturer standard package: 5500pcs.
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41; DO204AL
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Manufacturer standard package: 5500pcs.
Capacitance: 15pF
на замовлення 6629 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.25 грн |
| 100+ | 8.90 грн |
| 348+ | 2.80 грн |
| 949+ | 2.63 грн |
| BAT54WS-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| 1N4004-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41; DO204AL
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Capacitance: 15pF
Manufacturer standard package: 5500pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41; DO204AL
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Capacitance: 15pF
Manufacturer standard package: 5500pcs.
на замовлення 10910 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.90 грн |
| 34+ | 12.62 грн |
| 100+ | 10.21 грн |
| 332+ | 2.91 грн |
| 912+ | 2.75 грн |
| 1N4004-E3/73 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; Ammo Pack
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41; DO204AL
Kind of package: Ammo Pack
Max. forward voltage: 1.1V
Capacitance: 15pF
Manufacturer standard package: 3000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; Ammo Pack
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41; DO204AL
Kind of package: Ammo Pack
Max. forward voltage: 1.1V
Capacitance: 15pF
Manufacturer standard package: 3000pcs.
на замовлення 24775 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.42 грн |
| 40+ | 10.59 грн |
| 100+ | 7.23 грн |
| 500+ | 5.54 грн |
| 512+ | 1.89 грн |
| 1406+ | 1.79 грн |
| 1N4004GP-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41; DO204AL
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Reverse recovery time: 2µs
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Manufacturer standard package: 5500pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO204AL,DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41; DO204AL
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Reverse recovery time: 2µs
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Manufacturer standard package: 5500pcs.
на замовлення 1535 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.49 грн |
| 23+ | 18.64 грн |
| 60+ | 7.12 грн |
| 100+ | 6.95 грн |
| IRF640PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1339 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 213.49 грн |
| 10+ | 140.63 грн |
| 26+ | 37.28 грн |
| 71+ | 35.58 грн |
| IRF640SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1072 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 205.28 грн |
| 10+ | 118.61 грн |
| 19+ | 52.53 грн |
| 51+ | 49.98 грн |
| IRF640STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BAT54A-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Leakage current: 2µA
Manufacturer standard package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Leakage current: 2µA
Manufacturer standard package: 3000pcs.
на замовлення 85 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 10.04 грн |
| 72+ | 5.93 грн |
| BAT54A-HE3-08 |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Leakage current: 2µA
Manufacturer standard package: 3000pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Leakage current: 2µA
Manufacturer standard package: 3000pcs.
Application: automotive industry
на замовлення 550 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 6.30 грн |
| 115+ | 3.69 грн |
| 315+ | 3.09 грн |
| BAT54S-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.24V
Max. load current: 0.3A
Kind of package: 7 inch reel
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Manufacturer standard package: 3000pcs.
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.24V
Max. load current: 0.3A
Kind of package: 7 inch reel
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Manufacturer standard package: 3000pcs.
Power dissipation: 0.23W
Features of semiconductor devices: small signal
на замовлення 7961 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 19.16 грн |
| 41+ | 10.51 грн |
| 100+ | 7.26 грн |
| 399+ | 2.42 грн |
| 1097+ | 2.29 грн |
| BAT54S-HE3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Kind of package: 7 inch reel
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Manufacturer standard package: 3000pcs.
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Kind of package: 7 inch reel
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Manufacturer standard package: 3000pcs.
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Leakage current: 2µA
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| IRFP240PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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| T63XB103KT20 |
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Виробник: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 250mW; ±10%; linear; THT
Type of potentiometer: mounting
Resistance: 10kΩ
Kind of potentiometer: multiturn
Power: 0.25W
Number of mechanical turns: 15 ±5
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T63XB
Body dimensions: 6.8x6.8x5mm
Mounting: THT
Potentiometer standard - inch: 1/4"
Temperature coefficient: 100ppm/°C
Number of electrical turns: 13 ±2
Track material: cermet
Terminal pitch: 2.5x2.5mm
IP rating: IP67
Torque: 1Ncm
Operating temperature: -55...155°C
Operating voltage: 250V
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 250mW; ±10%; linear; THT
Type of potentiometer: mounting
Resistance: 10kΩ
Kind of potentiometer: multiturn
Power: 0.25W
Number of mechanical turns: 15 ±5
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T63XB
Body dimensions: 6.8x6.8x5mm
Mounting: THT
Potentiometer standard - inch: 1/4"
Temperature coefficient: 100ppm/°C
Number of electrical turns: 13 ±2
Track material: cermet
Terminal pitch: 2.5x2.5mm
IP rating: IP67
Torque: 1Ncm
Operating temperature: -55...155°C
Operating voltage: 250V
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| T63YB103KT20 |
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Виробник: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 250mW; ±10%; linear; THT
Type of potentiometer: mounting
Resistance: 10kΩ
Kind of potentiometer: multiturn
Power: 0.25W
Number of mechanical turns: 15 ±5
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T63YB
Body dimensions: 6.8x6.8x5mm
Mounting: THT
Potentiometer standard - inch: 1/4"
Temperature coefficient: 100ppm/°C
Number of electrical turns: 13 ±2
Track material: cermet
Terminal pitch: 2.5x2.5mm
IP rating: IP67
Torque: 1Ncm
Operating temperature: -55...155°C
Operating voltage: 250V
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 250mW; ±10%; linear; THT
Type of potentiometer: mounting
Resistance: 10kΩ
Kind of potentiometer: multiturn
Power: 0.25W
Number of mechanical turns: 15 ±5
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T63YB
Body dimensions: 6.8x6.8x5mm
Mounting: THT
Potentiometer standard - inch: 1/4"
Temperature coefficient: 100ppm/°C
Number of electrical turns: 13 ±2
Track material: cermet
Terminal pitch: 2.5x2.5mm
IP rating: IP67
Torque: 1Ncm
Operating temperature: -55...155°C
Operating voltage: 250V
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| T93XB103KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Resistance: 10kΩ
Kind of potentiometer: multiturn
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93XB
Track material: cermet
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Z; 67Z; 3296Z
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...125°C
Operating voltage: 250V
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Resistance: 10kΩ
Kind of potentiometer: multiturn
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93XB
Track material: cermet
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Z; 67Z; 3296Z
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...125°C
Operating voltage: 250V
на замовлення 860 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 98.53 грн |
| 10+ | 67.78 грн |
| 25+ | 66.93 грн |
| T93YB103KT20 |
![]() |
Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Resistance: 10kΩ
Kind of potentiometer: multiturn
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...125°C
Operating voltage: 250V
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Resistance: 10kΩ
Kind of potentiometer: multiturn
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...125°C
Operating voltage: 250V
на замовлення 2219 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 129.56 грн |
| 5+ | 111.83 грн |
| 10+ | 92.34 грн |
| 15+ | 66.93 грн |
| 40+ | 63.54 грн |
| VS-36MT60 |
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Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Electrical mounting: THT
Leads: connectors FASTON
Max. off-state voltage: 0.6kV
Load current: 35A
Kind of package: bulk
Leads dimensions: 6.3x0.8mm
Case: D-63
Type of bridge rectifier: three-phase
Max. forward impulse current: 475A
Max. forward voltage: 1.19V
Version: square
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Electrical mounting: THT
Leads: connectors FASTON
Max. off-state voltage: 0.6kV
Load current: 35A
Kind of package: bulk
Leads dimensions: 6.3x0.8mm
Case: D-63
Type of bridge rectifier: three-phase
Max. forward impulse current: 475A
Max. forward voltage: 1.19V
Version: square
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1080.23 грн |
| 3+ | 948.01 грн |
| 5+ | 911.58 грн |
| SIHB12N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Power dissipation: 147W
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Power dissipation: 147W
Kind of package: reel; tape
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| SIHB12N60ET1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Pulsed drain current: 27A
Power dissipation: 147W
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Pulsed drain current: 27A
Power dissipation: 147W
Kind of package: reel; tape
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| SIHF12N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Pulsed drain current: 27A
Power dissipation: 33W
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Pulsed drain current: 27A
Power dissipation: 33W
Kind of package: tube
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| SIHP12N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Pulsed drain current: 27A
Power dissipation: 147W
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Pulsed drain current: 27A
Power dissipation: 147W
Kind of package: tube
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| IRFP22N50APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
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| IRFP250PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 419 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 401.44 грн |
| 5+ | 290.59 грн |
| 10+ | 243.99 грн |
| 11+ | 94.89 грн |
| 29+ | 89.80 грн |
| IRFP260PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
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| IRFP264PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
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| 1.5KE6.8CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
на замовлення 479 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.48 грн |
| 10+ | 45.41 грн |
| 46+ | 20.93 грн |
| 50+ | 20.84 грн |
| 127+ | 19.74 грн |
| SS34-E3/57T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel
Case: SMC
Mounting: SMD
Max. forward impulse current: 100A
Manufacturer standard package: 850pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 3A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel
Case: SMC
Mounting: SMD
Max. forward impulse current: 100A
Manufacturer standard package: 850pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 3A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Type of diode: Schottky rectifying
на замовлення 1942 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.34 грн |
| 13+ | 33.89 грн |
| 50+ | 26.94 грн |
| 84+ | 11.52 грн |
| 231+ | 10.84 грн |
| SS34-E3/9AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Case: SMC
Mounting: SMD
Max. forward impulse current: 100A
Manufacturer standard package: 3500pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 3A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 20mA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Case: SMC
Mounting: SMD
Max. forward impulse current: 100A
Manufacturer standard package: 3500pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 3A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 20mA
Type of diode: Schottky rectifying
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| MBR20100CT-E3/4W |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
Manufacturer standard package: 50pcs.
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
Manufacturer standard package: 50pcs.
Heatsink thickness: 1.14...1.39mm
на замовлення 54 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 136.85 грн |
| 5+ | 104.20 грн |
| 10+ | 94.89 грн |
| 16+ | 61.84 грн |
| 43+ | 58.46 грн |
| 2N7002K-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 0.14W
Gate charge: 0.6nC
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 0.14W
Gate charge: 0.6nC
Version: ESD
на замовлення 2822 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.98 грн |
| 45+ | 9.57 грн |
| 55+ | 7.73 грн |
| 100+ | 6.96 грн |
| 378+ | 2.55 грн |
| 1040+ | 2.41 грн |
| SIHB15N65E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 96nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 96nC
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| SIHF15N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 96nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 96nC
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| SIHP15N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 96nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 96nC
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од. на суму грн.
| SS16-E3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 5mA
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 5mA
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.75V
на замовлення 7093 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 17.33 грн |
| 37+ | 11.61 грн |
| 50+ | 8.68 грн |
| 100+ | 7.96 грн |
| 225+ | 4.30 грн |
| 617+ | 4.07 грн |
| SS16-E3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.75V
на замовлення 5034 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.84 грн |
| 25+ | 17.45 грн |
| 50+ | 12.17 грн |
| 100+ | 10.43 грн |
| 208+ | 4.65 грн |
| 571+ | 4.40 грн |
| SS16HE3_B/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Case: SMA
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 60V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Case: SMA
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 60V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.75V
на замовлення 3865 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.46 грн |
| 26+ | 16.69 грн |
| 28+ | 15.50 грн |
| 50+ | 12.71 грн |
| 100+ | 11.61 грн |
| 147+ | 6.61 грн |
| 404+ | 6.18 грн |
| IRF840PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 2331 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 181.56 грн |
| 5+ | 131.31 грн |
| 10+ | 110.98 грн |
| 20+ | 50.83 грн |
| 53+ | 48.29 грн |
| GRC00JG3321E00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; Ø16x25mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Body dimensions: Ø16x25mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; Ø16x25mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Body dimensions: Ø16x25mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
товару немає в наявності
Мінімальне замовлення: 2 шт
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од. на суму грн.





































