| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF530PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
на замовлення 2845 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
IRF530SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
на замовлення 400 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
BZX55C10-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 10V; DO35; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
на замовлення 7670 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
BZX55C12-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 12V; DO35; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
на замовлення 7723 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
MUR460-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 4A; Ifsm: 150A; DO201AD; 13 inch reel Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Case: DO201AD Kind of package: 13 inch reel Reverse recovery time: 50ns Manufacturer standard package: 1400pcs. Max. forward voltage: 1.05V Features of semiconductor devices: ultrafast switching Semiconductor structure: single diode Max. forward impulse current: 150A |
на замовлення 598 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
1N4007-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Max. forward impulse current: 30A Case: DO41; DO204AL Kind of package: 13 inch reel Max. forward voltage: 1.1V Manufacturer standard package: 5500pcs. |
на замовлення 21185 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
1N4007-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ammo Pack Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Max. forward impulse current: 30A Case: DO41; DO204AL Kind of package: Ammo Pack Max. forward voltage: 1.1V Manufacturer standard package: 3000pcs. |
на замовлення 12445 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
293D476X0025D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
293D476X9025D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount Case: D |
на замовлення 23928 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
VJ1206Y104KXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 25923 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
1N4148-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 8ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Case: DO35 Kind of package: Ammo Pack Reverse recovery time: 8ns Max. load current: 0.5A Max. forward impulse current: 2A |
на замовлення 48508 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
SIHA20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SIHB20N50E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 42A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SIHG20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
| SiHH20N50E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 174W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 147mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 53A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
SIHP20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SIHJ7N65E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 598mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhancement Pulsed drain current: 17A Power dissipation: 96W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
CRCW12060000Z0TABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 0Ω; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C Type of resistor: thick film Resistance: 0Ω Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 114562 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
| BAV70-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1.25V Kind of package: 7 inch reel Manufacturer standard package: 3000pcs. Power dissipation: 0.35W Leakage current: 50µA Capacitance: 1.5pF Max. forward impulse current: 2A |
на замовлення 17627 шт: термін постачання 14-30 дні (днів) |
|
|||||||||||||||||
|
BAV70-G3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1.25V Power dissipation: 0.35W Kind of package: 7 inch reel Max. forward impulse current: 2A Manufacturer standard package: 3000pcs. Leakage current: 50µA Capacitance: 1.5pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
LL4148-GS08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: MiniMELF; SOD80 Max. forward voltage: 0.86V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 7 inch reel Manufacturer standard package: 2500pcs. |
на замовлення 1657335 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
LL4148-GS18 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: MiniMELF; SOD80 Max. forward voltage: 0.86V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 13 inch reel Manufacturer standard package: 10000pcs. |
на замовлення 6401 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
GRC00JS4721E00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 4700uF; 25VDC; Ø16x31.5mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7mF Operating voltage: 25V DC Body dimensions: Ø16x31.5mm Operating temperature: -40...105°C Tolerance: ±20% Service life: 2000h |
на замовлення 96 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
293D106X9050D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 10µF Operating voltage: 50V DC Case: D Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Mounting: SMD Manufacturer series: Tantamount Operating temperature: -55...125°C |
на замовлення 3136 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
293D475X0050D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 4.7µF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: D |
на замовлення 103 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
293D475X9050D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 50V DC Tolerance: ±10% Manufacturer series: Tantamount Mounting: SMD Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Roll diameter max.: 178mm |
на замовлення 977 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
293D475X9025B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Tolerance: ±10% Manufacturer series: Tantamount Mounting: SMD Operating temperature: -55...125°C Case: B Case - inch: 1411 Case - mm: 3528 |
на замовлення 2920 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
293D475X9025C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Tolerance: ±10% Manufacturer series: Tantamount Mounting: SMD Operating temperature: -55...125°C Case: C Case - inch: 2312 Case - mm: 6032 Roll diameter max.: 178mm |
на замовлення 2942 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
SIHA240N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP Type of transistor: N-MOSFET Power dissipation: 31W Case: TO220FP Mounting: THT Gate charge: 23nC Kind of package: tube Gate-source voltage: ±30V On-state resistance: 0.24Ω Pulsed drain current: 30A Polarisation: unipolar Drain current: 7A Kind of channel: enhancement Drain-source voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SIHD240N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Power dissipation: 78W Case: DPAK; TO252 Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Gate-source voltage: ±30V On-state resistance: 0.24Ω Pulsed drain current: 30A Polarisation: unipolar Drain current: 7A Kind of channel: enhancement Drain-source voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
293D476X0016D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±20% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
293D476X9010B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 10V DC Mounting: SMD Case: B Case - inch: 1411 Case - mm: 3528 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount |
на замовлення 4714 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
293D476X9010C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C Operating voltage: 10V DC Mounting: SMD Case: C Operating temperature: -55...125°C Manufacturer series: Tantamount Type of capacitor: tantalum Capacitance: 47µF Case - inch: 2312 Case - mm: 6032 Tolerance: ±10% |
на замовлення 401 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
293D476X9016C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C Operating voltage: 16V DC Mounting: SMD Case: C Operating temperature: -55...125°C Manufacturer series: Tantamount Type of capacitor: tantalum Capacitance: 47µF Case - inch: 2312 Case - mm: 6032 Tolerance: ±10% |
на замовлення 12693 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
293D476X9016D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount Case: D |
на замовлення 17199 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
293D476X9020D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 20V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
на замовлення 1206 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
293D476X96R3B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 6.3V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case: B Case - inch: 1411 Case - mm: 3528 Manufacturer series: Tantamount |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
293D477X96R3D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 470µF Operating voltage: 6.3V DC Tolerance: ±10% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: 293D ESR value: 0.5Ω |
на замовлення 1894 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
1N5408-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO201AD; 13 inch reel Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO201AD Kind of package: 13 inch reel Max. forward voltage: 1.2V Leakage current: 0.5mA Capacitance: 30pF Manufacturer standard package: 1400pcs. |
на замовлення 5479 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
2W10G-E4/51 | VISHAY |
Category: Round single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round Version: round Features of semiconductor devices: glass passivated Leads: wire Ø 0.75mm Max. off-state voltage: 1kV Electrical mounting: THT Load current: 2A Kind of package: bulk Case: WOG Type of bridge rectifier: single-phase Max. forward impulse current: 60A Max. forward voltage: 1.1V |
на замовлення 5669 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
GRC00JE1021H00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x20mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Body dimensions: Ø16x20mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MAL215031102E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Body dimensions: Ø16x25mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 10000h Height: 25mm Diameter: 16mm |
на замовлення 116 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
ZRC00JG1021H00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; ±20%; 10000h Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Body dimensions: Ø16x25mm Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SI7852DP-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 7.6A Pulsed drain current: 50A Power dissipation: 1.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
SS26S-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel Mounting: SMD Max. forward impulse current: 40A Manufacturer standard package: 7500pcs. Max. forward voltage: 0.62V Max. off-state voltage: 60V Load current: 2A Kind of package: 13 inch reel Semiconductor structure: single diode Leakage current: 10mA Case: SMA Type of diode: Schottky rectifying |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||
|
SS26S-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel Mounting: SMD Max. forward impulse current: 40A Manufacturer standard package: 1800pcs. Max. forward voltage: 0.62V Max. off-state voltage: 60V Load current: 2A Kind of package: 7 inch reel Semiconductor structure: single diode Leakage current: 10mA Case: SMA Type of diode: Schottky rectifying |
на замовлення 1600 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
IRF840ALPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRF840APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 726 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
IRF840ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
на замовлення 385 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
IRF840ASTRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
|
IRF840LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 410 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
IRF840SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 221 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
IRF840STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BAS40-05-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 5pF Features of semiconductor devices: small signal Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.2W Leakage current: 0.1µA Manufacturer standard package: 3000pcs. Max. forward voltage: 1V |
на замовлення 279 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
1.5KE27CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 27.05V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Kind of package: 13 inch reel Technology: TransZorb® |
на замовлення 1165 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
1N5822-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: 13 inch reel Manufacturer standard package: 1400pcs. |
на замовлення 602 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
BYV26C-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; Ammo Pack; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Max. forward impulse current: 30A Case: SOD57 Kind of package: Ammo Pack Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BYV26C-TR | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; 10 inch reel Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Max. forward impulse current: 30A Case: SOD57 Kind of package: 10 inch reel Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns Manufacturer standard package: 5000pcs. |
на замовлення 1201 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
1.5KE400A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; TransZorb® Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated Manufacturer series: 1.5KE |
на замовлення 428 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
IRF740APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
на замовлення 396 шт: термін постачання 14-30 дні (днів) |
|
| IRF530PBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 2845 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 129.56 грн |
| 5+ | 92.51 грн |
| 10+ | 83.02 грн |
| 36+ | 27.11 грн |
| 98+ | 25.67 грн |
| IRF530SPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 400 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 179.73 грн |
| 10+ | 91.50 грн |
| 29+ | 33.89 грн |
| 79+ | 32.19 грн |
| BZX55C10-TAP |
![]() |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
на замовлення 7670 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 10.04 грн |
| 60+ | 7.12 грн |
| 100+ | 4.89 грн |
| 250+ | 4.29 грн |
| 398+ | 2.42 грн |
| 1093+ | 2.29 грн |
| BZX55C12-TAP |
![]() |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
на замовлення 7723 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 10.04 грн |
| 79+ | 5.42 грн |
| 129+ | 3.30 грн |
| 250+ | 3.08 грн |
| 418+ | 2.31 грн |
| 1148+ | 2.19 грн |
| MUR460-E3/54 |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; Ifsm: 150A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Case: DO201AD
Kind of package: 13 inch reel
Reverse recovery time: 50ns
Manufacturer standard package: 1400pcs.
Max. forward voltage: 1.05V
Features of semiconductor devices: ultrafast switching
Semiconductor structure: single diode
Max. forward impulse current: 150A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; Ifsm: 150A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Case: DO201AD
Kind of package: 13 inch reel
Reverse recovery time: 50ns
Manufacturer standard package: 1400pcs.
Max. forward voltage: 1.05V
Features of semiconductor devices: ultrafast switching
Semiconductor structure: single diode
Max. forward impulse current: 150A
на замовлення 598 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.13 грн |
| 10+ | 42.61 грн |
| 48+ | 20.42 грн |
| 130+ | 19.32 грн |
| 1N4007-E3/54 |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41; DO204AL
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Manufacturer standard package: 5500pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41; DO204AL
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Manufacturer standard package: 5500pcs.
на замовлення 21185 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.51 грн |
| 100+ | 10.87 грн |
| 342+ | 2.83 грн |
| 938+ | 2.68 грн |
| 11000+ | 2.58 грн |
| 1N4007-E3/73 |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ammo Pack
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41; DO204AL
Kind of package: Ammo Pack
Max. forward voltage: 1.1V
Manufacturer standard package: 3000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ammo Pack
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41; DO204AL
Kind of package: Ammo Pack
Max. forward voltage: 1.1V
Manufacturer standard package: 3000pcs.
на замовлення 12445 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.02 грн |
| 28+ | 15.42 грн |
| 34+ | 12.54 грн |
| 100+ | 7.66 грн |
| 343+ | 2.81 грн |
| 944+ | 2.66 грн |
| 293D476X0025D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 147.80 грн |
| 293D476X9025D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Case: D
на замовлення 23928 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 138.68 грн |
| 5+ | 110.98 грн |
| 10+ | 87.26 грн |
| 20+ | 50.83 грн |
| 53+ | 48.29 грн |
| VJ1206Y104KXACW1BC |
![]() |
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 25923 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.69 грн |
| 76+ | 5.59 грн |
| 172+ | 2.47 грн |
| 500+ | 1.76 грн |
| 698+ | 1.38 грн |
| 1918+ | 1.31 грн |
| 1N4148-TAP |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 8ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: DO35
Kind of package: Ammo Pack
Reverse recovery time: 8ns
Max. load current: 0.5A
Max. forward impulse current: 2A
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 8ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: DO35
Kind of package: Ammo Pack
Reverse recovery time: 8ns
Max. load current: 0.5A
Max. forward impulse current: 2A
на замовлення 48508 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 17.33 грн |
| 55+ | 7.79 грн |
| 103+ | 4.12 грн |
| 500+ | 2.70 грн |
| 881+ | 1.09 грн |
| 2421+ | 1.03 грн |
| SIHA20N50E-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
товару немає в наявності
В кошику
од. на суму грн.
| SIHB20N50E-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 42A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 42A
товару немає в наявності
В кошику
од. на суму грн.
| SIHG20N50E-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 286.35 грн |
| 5+ | 247.38 грн |
| 7+ | 158.42 грн |
| 17+ | 149.95 грн |
| SiHH20N50E-T1-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 53A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 53A
товару немає в наявності
В кошику
од. на суму грн.
| SIHP20N50E-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
товару немає в наявності
В кошику
од. на суму грн.
| SIHJ7N65E-T1-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Pulsed drain current: 17A
Power dissipation: 96W
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Pulsed drain current: 17A
Power dissipation: 96W
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| CRCW12060000Z0TABC |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 0Ω
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 0Ω
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 114562 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 458+ | 1.00 грн |
| 556+ | 0.76 грн |
| 691+ | 0.61 грн |
| 1000+ | 0.51 грн |
| 4143+ | 0.23 грн |
| 11394+ | 0.22 грн |
| 75000+ | 0.21 грн |
| BAV70-E3-08 |
![]() |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Power dissipation: 0.35W
Leakage current: 50µA
Capacitance: 1.5pF
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Power dissipation: 0.35W
Leakage current: 50µA
Capacitance: 1.5pF
Max. forward impulse current: 2A
на замовлення 17627 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.77 грн |
| 40+ | 10.84 грн |
| 50+ | 8.47 грн |
| 100+ | 7.05 грн |
| 500+ | 4.14 грн |
| 529+ | 1.82 грн |
| 1455+ | 1.73 грн |
| BAV70-G3-08 |
![]() |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Kind of package: 7 inch reel
Max. forward impulse current: 2A
Manufacturer standard package: 3000pcs.
Leakage current: 50µA
Capacitance: 1.5pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Kind of package: 7 inch reel
Max. forward impulse current: 2A
Manufacturer standard package: 3000pcs.
Leakage current: 50µA
Capacitance: 1.5pF
товару немає в наявності
В кошику
од. на суму грн.
| LL4148-GS08 |
![]() |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Manufacturer standard package: 2500pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Manufacturer standard package: 2500pcs.
на замовлення 1657335 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.12 грн |
| 97+ | 4.41 грн |
| 195+ | 2.18 грн |
| 500+ | 1.16 грн |
| 1000+ | 0.96 грн |
| 1306+ | 0.74 грн |
| 3592+ | 0.69 грн |
| LL4148-GS18 |
![]() |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Manufacturer standard package: 10000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Manufacturer standard package: 10000pcs.
на замовлення 6401 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.39 грн |
| 132+ | 3.22 грн |
| 237+ | 1.79 грн |
| 500+ | 1.18 грн |
| 1000+ | 1.01 грн |
| 1356+ | 0.71 грн |
| 3736+ | 0.67 грн |
| GRC00JS4721E00L |
![]() |
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; Ø16x31.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Body dimensions: Ø16x31.5mm
Operating temperature: -40...105°C
Tolerance: ±20%
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; Ø16x31.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Body dimensions: Ø16x31.5mm
Operating temperature: -40...105°C
Tolerance: ±20%
Service life: 2000h
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 93.97 грн |
| 10+ | 51.34 грн |
| 32+ | 30.75 грн |
| 87+ | 29.14 грн |
| 293D106X9050D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 50V DC
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Mounting: SMD
Manufacturer series: Tantamount
Operating temperature: -55...125°C
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 50V DC
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Mounting: SMD
Manufacturer series: Tantamount
Operating temperature: -55...125°C
на замовлення 3136 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.19 грн |
| 10+ | 84.97 грн |
| 15+ | 65.57 грн |
| 41+ | 62.01 грн |
| 2500+ | 61.84 грн |
| 293D475X0050D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
на замовлення 103 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 144.15 грн |
| 17+ | 59.39 грн |
| 45+ | 56.17 грн |
| 293D475X9050D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Mounting: SMD
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Roll diameter max.: 178mm
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Mounting: SMD
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Roll diameter max.: 178mm
на замовлення 977 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 114.96 грн |
| 10+ | 70.57 грн |
| 21+ | 47.53 грн |
| 56+ | 44.99 грн |
| 293D475X9025B2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Mounting: SMD
Operating temperature: -55...125°C
Case: B
Case - inch: 1411
Case - mm: 3528
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Mounting: SMD
Operating temperature: -55...125°C
Case: B
Case - inch: 1411
Case - mm: 3528
на замовлення 2920 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 41.06 грн |
| 17+ | 25.84 грн |
| 30+ | 19.49 грн |
| 50+ | 17.03 грн |
| 79+ | 12.28 грн |
| 216+ | 11.61 грн |
| 500+ | 11.18 грн |
| 293D475X9025C2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Mounting: SMD
Operating temperature: -55...125°C
Case: C
Case - inch: 2312
Case - mm: 6032
Roll diameter max.: 178mm
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Mounting: SMD
Operating temperature: -55...125°C
Case: C
Case - inch: 2312
Case - mm: 6032
Roll diameter max.: 178mm
на замовлення 2942 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 62.95 грн |
| 17+ | 25.42 грн |
| 18+ | 23.81 грн |
| 20+ | 22.70 грн |
| 50+ | 19.23 грн |
| 67+ | 14.57 грн |
| 183+ | 13.72 грн |
| 500+ | 13.22 грн |
| SIHA240N60E-GE3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 30A
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 600V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 30A
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.
| SIHD240N60E-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Power dissipation: 78W
Case: DPAK; TO252
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 30A
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 600V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Power dissipation: 78W
Case: DPAK; TO252
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 30A
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.
| 293D476X0016D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 73.90 грн |
| 293D476X9010B2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
на замовлення 4714 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 50.18 грн |
| 16+ | 27.53 грн |
| 50+ | 20.42 грн |
| 69+ | 13.98 грн |
| 190+ | 13.22 грн |
| 293D476X9010C2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Operating voltage: 10V DC
Mounting: SMD
Case: C
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Type of capacitor: tantalum
Capacitance: 47µF
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Operating voltage: 10V DC
Mounting: SMD
Case: C
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Type of capacitor: tantalum
Capacitance: 47µF
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
на замовлення 401 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.48 грн |
| 20+ | 22.28 грн |
| 50+ | 21.01 грн |
| 57+ | 16.86 грн |
| 157+ | 16.01 грн |
| 293D476X9016C2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Operating voltage: 16V DC
Mounting: SMD
Case: C
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Type of capacitor: tantalum
Capacitance: 47µF
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Operating voltage: 16V DC
Mounting: SMD
Case: C
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Type of capacitor: tantalum
Capacitance: 47µF
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
на замовлення 12693 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.13 грн |
| 16+ | 27.03 грн |
| 49+ | 19.65 грн |
| 134+ | 18.64 грн |
| 293D476X9016D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Case: D
на замовлення 17199 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.62 грн |
| 42+ | 23.47 грн |
| 114+ | 22.20 грн |
| 1000+ | 21.35 грн |
| 293D476X9020D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
на замовлення 1206 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.89 грн |
| 7+ | 67.27 грн |
| 10+ | 54.98 грн |
| 30+ | 32.11 грн |
| 83+ | 30.41 грн |
| 125+ | 30.16 грн |
| 500+ | 29.23 грн |
| 293D476X96R3B2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: B
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: B
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.78 грн |
| 293D477X96R3D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: 293D
ESR value: 0.5Ω
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: 293D
ESR value: 0.5Ω
на замовлення 1894 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 463.48 грн |
| 6+ | 165.20 грн |
| 17+ | 156.73 грн |
| 1N5408-E3/54 |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: 13 inch reel
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Capacitance: 30pF
Manufacturer standard package: 1400pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: 13 inch reel
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Capacitance: 30pF
Manufacturer standard package: 1400pcs.
на замовлення 5479 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.58 грн |
| 21+ | 20.67 грн |
| 50+ | 15.59 грн |
| 93+ | 10.42 грн |
| 256+ | 9.83 грн |
| 2W10G-E4/51 |
![]() |
Виробник: VISHAY
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Version: round
Features of semiconductor devices: glass passivated
Leads: wire Ø 0.75mm
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 2A
Kind of package: bulk
Case: WOG
Type of bridge rectifier: single-phase
Max. forward impulse current: 60A
Max. forward voltage: 1.1V
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Version: round
Features of semiconductor devices: glass passivated
Leads: wire Ø 0.75mm
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 2A
Kind of package: bulk
Case: WOG
Type of bridge rectifier: single-phase
Max. forward impulse current: 60A
Max. forward voltage: 1.1V
на замовлення 5669 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.87 грн |
| 11+ | 40.58 грн |
| 47+ | 20.59 грн |
| 129+ | 19.49 грн |
| GRC00JE1021H00L |
![]() |
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x20mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x20mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x20mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x20mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
товару немає в наявності
В кошику
од. на суму грн.
| MAL215031102E3 |
![]() |
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x25mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Height: 25mm
Diameter: 16mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x25mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Height: 25mm
Diameter: 16mm
на замовлення 116 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 215.32 грн |
| 5+ | 142.33 грн |
| 9+ | 115.22 грн |
| 23+ | 109.29 грн |
| ZRC00JG1021H00L |
![]() |
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x25mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x25mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
товару немає в наявності
В кошику
од. на суму грн.
| SI7852DP-T1-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SS26S-E3/5AT |
![]() |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| SS26S-E3/61T |
![]() |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
на замовлення 1600 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.49 грн |
| 20+ | 22.03 грн |
| 26+ | 16.60 грн |
| 50+ | 13.30 грн |
| 82+ | 11.86 грн |
| 100+ | 11.10 грн |
| 500+ | 10.84 грн |
| IRF840ALPBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF840APBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 726 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 189.77 грн |
| 10+ | 117.76 грн |
| 17+ | 59.30 грн |
| 45+ | 55.91 грн |
| IRF840ASPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 385 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 235.39 грн |
| 5+ | 171.98 грн |
| 10+ | 151.65 грн |
| 15+ | 67.78 грн |
| 40+ | 63.54 грн |
| IRF840ASTRLPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRF840LCPBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 410 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 171.52 грн |
| 10+ | 128.77 грн |
| 15+ | 65.23 грн |
| 41+ | 61.84 грн |
| IRF840SPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 221 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 183.38 грн |
| 10+ | 83.87 грн |
| 16+ | 60.15 грн |
| 44+ | 56.76 грн |
| IRF840STRLPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BAS40-05-E3-08 |
![]() |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Features of semiconductor devices: small signal
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.2W
Leakage current: 0.1µA
Manufacturer standard package: 3000pcs.
Max. forward voltage: 1V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Features of semiconductor devices: small signal
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.2W
Leakage current: 0.1µA
Manufacturer standard package: 3000pcs.
Max. forward voltage: 1V
на замовлення 279 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.86 грн |
| 57+ | 7.54 грн |
| 100+ | 4.30 грн |
| 1.5KE27CA-E3/54 |
![]() |
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
на замовлення 1165 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.93 грн |
| 16+ | 28.04 грн |
| 48+ | 20.16 грн |
| 132+ | 19.06 грн |
| 1N5822-E3/54 |
![]() |
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Manufacturer standard package: 1400pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Manufacturer standard package: 1400pcs.
на замовлення 602 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.67 грн |
| 17+ | 25.92 грн |
| 50+ | 24.57 грн |
| 64+ | 15.16 грн |
| 176+ | 14.32 грн |
| BYV26C-TAP |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; Ammo Pack; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: Ammo Pack
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; Ammo Pack; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: Ammo Pack
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
товару немає в наявності
В кошику
од. на суму грн.
| BYV26C-TR |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; 10 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: 10 inch reel
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Manufacturer standard package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; 10 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: 10 inch reel
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Manufacturer standard package: 5000pcs.
на замовлення 1201 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.49 грн |
| 14+ | 31.68 грн |
| 25+ | 30.33 грн |
| 51+ | 18.98 грн |
| 140+ | 17.96 грн |
| 1.5KE400A-E3/54 |
![]() |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
на замовлення 428 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 113.13 грн |
| 10+ | 86.16 грн |
| 34+ | 28.47 грн |
| 94+ | 26.86 грн |
| IRF740APBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 396 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 161.49 грн |
| 10+ | 94.04 грн |
| 14+ | 71.16 грн |
| 38+ | 67.78 грн |



































