| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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CRCW120610K0FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; 200V; -55÷125°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 10kΩ Power: 0.25W Tolerance: ±1% Operating voltage: 200V Mounting: SMD Operating temperature: -55...125°C |
на замовлення 13672 шт: термін постачання 21-30 дні (днів) |
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CRCW120610K0FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; 200V; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 10kΩ Power: 0.25W Tolerance: ±1% Operating voltage: 200V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 18150 шт: термін постачання 21-30 дні (днів) |
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CRCW120610K0JNEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; 200V; -55÷125°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 10kΩ Power: 0.25W Tolerance: ±5% Operating voltage: 200V Mounting: SMD Operating temperature: -55...125°C |
на замовлення 4360 шт: термін постачання 21-30 дні (днів) |
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CRCW120610K0JNTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; 200V; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 10kΩ Power: 0.25W Tolerance: ±5% Operating voltage: 200V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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SFH6156-2 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4.2µs Turn-off time: 23µs CTR@If: 63-125%@10mA |
на замовлення 4214 шт: термін постачання 21-30 дні (днів) |
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SFH6156-2T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4.2µs Turn-off time: 23µs CTR@If: 63-125%@10mA |
на замовлення 2043 шт: термін постачання 21-30 дні (днів) |
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SFH6156-2X001T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4.2µs Turn-off time: 23µs CTR@If: 63-125%@10mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4001-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 1A; 13 inch reel; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Quantity in set/package: 5500pcs. Capacitance: 15pF |
на замовлення 5551 шт: термін постачання 21-30 дні (днів) |
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BAT54WS-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: 7 inch reel Max. load current: 0.3A Quantity in set/package: 3000pcs. |
на замовлення 372 шт: термін постачання 21-30 дні (днів) |
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1N4004-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Quantity in set/package: 5500pcs. Capacitance: 15pF |
на замовлення 10568 шт: термін постачання 21-30 дні (днів) |
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1N4004-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF |
на замовлення 25720 шт: термін постачання 21-30 дні (днів) |
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1N4004GP-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Quantity in set/package: 5500pcs. Features of semiconductor devices: glass passivated Capacitance: 8pF Reverse recovery time: 2µs |
на замовлення 4045 шт: термін постачання 21-30 дні (днів) |
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IRF640PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube |
на замовлення 1106 шт: термін постачання 21-30 дні (днів) |
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IRF640SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: tube |
на замовлення 1070 шт: термін постачання 21-30 дні (днів) |
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IRF640STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT54A-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
на замовлення 1285 шт: термін постачання 21-30 дні (днів) |
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BAT54A-HE3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Features of semiconductor devices: small signal Application: automotive industry Quantity in set/package: 3000pcs. |
на замовлення 1610 шт: термін постачання 21-30 дні (днів) |
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BAT54S-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 0.24V Max. forward impulse current: 0.6A Kind of package: 7 inch reel Power dissipation: 0.23W Quantity in set/package: 3000pcs. Features of semiconductor devices: small signal Reverse recovery time: 5ns Max. load current: 0.3A |
на замовлення 5988 шт: термін постачання 21-30 дні (днів) |
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BAT54S-HE3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Features of semiconductor devices: small signal Application: automotive industry Quantity in set/package: 3000pcs. |
на замовлення 2895 шт: термін постачання 21-30 дні (днів) |
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VS-10BQ100-M3/5BT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.59V Max. forward impulse current: 38A Kind of package: 13 inch reel Quantity in set/package: 3200pcs. |
на замовлення 1965 шт: термін постачання 21-30 дні (днів) |
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VS-10BQ100HM3/5BT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.82V Max. forward impulse current: 780A Kind of package: 13 inch reel Quantity in set/package: 3200pcs. Capacitance: 65pF Application: automotive industry |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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SMAJ15A-E3/61 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; unidirectional; SMA; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Technology: TransZorb® |
на замовлення 2994 шт: термін постачання 21-30 дні (днів) |
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IRFP240PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 12A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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T63XB103KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Manufacturer series: T63XB Terminal pitch: 2.5x2.5mm Number of electrical turns: 13 ±2 Torque: 1Ncm Potentiometer standard - inch: 1/4" Temperature coefficient: 100ppm/°C Number of mechanical turns: 15 ±5 Operating voltage: 250V Track material: cermet IP rating: IP67 Characteristics: linear |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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T63YB103KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Manufacturer series: T63YB Terminal pitch: 2.5x2.5mm Number of electrical turns: 13 ±2 Torque: 1Ncm Potentiometer standard - inch: 1/4" Temperature coefficient: 100ppm/°C Number of mechanical turns: 15 ±5 Operating voltage: 250V Track material: cermet IP rating: IP67 Characteristics: linear |
на замовлення 885 шт: термін постачання 21-30 дні (днів) |
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T93XB103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Resistance: 10kΩ Power: 0.5W Tolerance: ±10% Body dimensions: 9.8x9.8x5mm Operating temperature: -55...125°C Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Manufacturer series: T93XB Terminal pitch: 2.5x2.5mm Number of electrical turns: 19 ±2 Torque: 1.5Ncm Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Number of mechanical turns: 22 ±5 Operating voltage: 250V Engineering PN: 64Z; 67Z; 3296Z Track material: cermet IP rating: IP67 Characteristics: linear |
на замовлення 91 шт: термін постачання 21-30 дні (днів) |
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T93YB103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Resistance: 10kΩ Power: 0.5W Tolerance: ±10% Body dimensions: 9.8x9.8x5mm Operating temperature: -55...125°C Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Manufacturer series: T93YB Terminal pitch: 2.5x2.5mm Number of electrical turns: 19 ±2 Torque: 1.5Ncm Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Number of mechanical turns: 22 ±5 Operating voltage: 250V Engineering PN: 64Y; 67Y; 3296Y Track material: cermet IP rating: IP67 Characteristics: linear |
на замовлення 3763 шт: термін постачання 21-30 дні (днів) |
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1N5400-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 200A Case: DO201AD Max. forward voltage: 1.2V Quantity in set/package: 1400pcs. Capacitance: 30pF Leakage current: 0.5mA |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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VS-36MT60 | VISHAY |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 475A Electrical mounting: THT Version: square Max. forward voltage: 1.19V Leads: connectors FASTON Leads dimensions: 6.3x0.8mm Case: D-63 Kind of package: bulk |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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SIHB12N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SIHB12N60ET1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHF12N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP12N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IRFP22N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 277W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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IRFP250PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Kind of channel: enhancement Gate charge: 0.14µC Kind of package: tube |
на замовлення 284 шт: термін постачання 21-30 дні (днів) |
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IRFP260PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 29A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement |
на замовлення 414 шт: термін постачання 21-30 дні (днів) |
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IRFP264PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 24A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE6.8CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 2mA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 489 шт: термін постачання 21-30 дні (днів) |
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SS34-E3/57T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs. Mounting: SMD Load current: 3A Kind of package: 7 inch reel Max. off-state voltage: 40V Max. forward impulse current: 100A Quantity in set/package: 850pcs. Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.5V |
на замовлення 2420 шт: термін постачання 21-30 дні (днів) |
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| SS34-E3/9AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel Mounting: SMD Load current: 3A Kind of package: 13 inch reel Max. off-state voltage: 40V Max. forward impulse current: 100A Quantity in set/package: 3500pcs. Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 20mA Max. forward voltage: 0.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR20100CT-E3/4W | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Kind of package: tube Quantity in set/package: 50pcs. Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm |
на замовлення 394 шт: термін постачання 21-30 дні (днів) |
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2N7002K-T1-E3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Pulsed drain current: 0.8A Power dissipation: 0.14W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 3350 шт: термін постачання 21-30 дні (днів) |
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2N7002K-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Pulsed drain current: 0.8A Power dissipation: 0.14W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 4911 шт: термін постачання 21-30 дні (днів) |
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| SIHB15N65E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHF15N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP15N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
SS16-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 13 inch reel Leakage current: 5mA Quantity in set/package: 7500pcs. |
на замовлення 5071 шт: термін постачання 21-30 дні (днів) |
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SS16-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. |
на замовлення 4910 шт: термін постачання 21-30 дні (днів) |
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SS16HE3_B/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. Application: automotive industry |
на замовлення 6429 шт: термін постачання 21-30 дні (днів) |
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CRCW0603240RFKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; 75V; -55÷155°C Mounting: SMD Case - inch: 0603 Resistance: 240Ω Operating temperature: -55...155°C Tolerance: ±1% Power: 0.1W Operating voltage: 75V Case - mm: 1608 Type of resistor: thick film |
на замовлення 19100 шт: термін постачання 21-30 дні (днів) |
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IRF840PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 3178 шт: термін постачання 21-30 дні (днів) |
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BZX55B10-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 27815 шт: термін постачання 21-30 дні (днів) |
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GRC00JG4702W00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 47µF Operating voltage: 450V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x25mm |
на замовлення 1063 шт: термін постачання 21-30 дні (днів) |
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GRC00JG3321E00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3mF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -40...105°C Service life: 2000h Dimensions: 16x25mm |
на замовлення 204 шт: термін постачання 21-30 дні (днів) |
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IRF530PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Drain current: 10A Gate charge: 26nC On-state resistance: 0.16Ω Power dissipation: 88W Gate-source voltage: ±20V Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Drain-source voltage: 100V |
на замовлення 1717 шт: термін постачання 21-30 дні (днів) |
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IRF530SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Mounting: SMD Kind of package: tube Case: D2PAK; TO263 Drain current: 10A Gate charge: 26nC On-state resistance: 0.16Ω Power dissipation: 88W Gate-source voltage: ±20V Pulsed drain current: 56A Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Drain-source voltage: 100V |
на замовлення 503 шт: термін постачання 21-30 дні (днів) |
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BZX55C10-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 187 шт: термін постачання 21-30 дні (днів) |
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BZX55C12-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 7977 шт: термін постачання 21-30 дні (днів) |
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MUR460-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: 13 inch reel Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1.05V Reverse recovery time: 50ns Quantity in set/package: 1400pcs. |
на замовлення 1328 шт: термін постачання 21-30 дні (днів) |
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1N4007-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF Quantity in set/package: 5500pcs. |
на замовлення 17744 шт: термін постачання 21-30 дні (днів) |
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| CRCW120610K0FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
на замовлення 13672 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 88+ | 5.05 грн |
| 241+ | 1.72 грн |
| 374+ | 1.10 грн |
| 555+ | 0.74 грн |
| 1000+ | 0.59 грн |
| 2500+ | 0.43 грн |
| 5000+ | 0.40 грн |
| 10000+ | 0.39 грн |
| CRCW120610K0FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 18150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 575+ | 0.77 грн |
| 688+ | 0.60 грн |
| 966+ | 0.43 грн |
| 1169+ | 0.35 грн |
| 2000+ | 0.29 грн |
| 4000+ | 0.24 грн |
| 5000+ | 0.23 грн |
| 10000+ | 0.21 грн |
| CRCW120610K0JNEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
на замовлення 4360 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 61+ | 7.31 грн |
| 143+ | 2.89 грн |
| 186+ | 2.22 грн |
| 226+ | 1.83 грн |
| 274+ | 1.51 грн |
| 500+ | 0.97 грн |
| 1000+ | 0.81 грн |
| 2500+ | 0.75 грн |
| CRCW120610K0JNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 1.88 грн |
| 1000+ | 0.57 грн |
| 5000+ | 0.27 грн |
| SFH6156-2 | ![]() |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
CTR@If: 63-125%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
CTR@If: 63-125%@10mA
на замовлення 4214 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.27 грн |
| 23+ | 18.46 грн |
| 25+ | 16.64 грн |
| 50+ | 15.57 грн |
| 100+ | 14.50 грн |
| 500+ | 12.36 грн |
| 1000+ | 11.54 грн |
| 2000+ | 10.71 грн |
| SFH6156-2T |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
CTR@If: 63-125%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
CTR@If: 63-125%@10mA
на замовлення 2043 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.07 грн |
| 25+ | 17.63 грн |
| 50+ | 15.74 грн |
| 75+ | 15.33 грн |
| 100+ | 14.83 грн |
| 500+ | 12.36 грн |
| SFH6156-2X001T |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
CTR@If: 63-125%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
CTR@If: 63-125%@10mA
товару немає в наявності
В кошику
од. на суму грн.
| 1N4001-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
на замовлення 5551 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.99 грн |
| 65+ | 6.43 грн |
| 70+ | 5.93 грн |
| 100+ | 4.64 грн |
| 250+ | 3.83 грн |
| 500+ | 3.30 грн |
| 1000+ | 2.85 грн |
| 5500+ | 1.87 грн |
| BAT54WS-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Max. load current: 0.3A
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 7 inch reel
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Max. load current: 0.3A
Quantity in set/package: 3000pcs.
на замовлення 372 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.42 грн |
| 50+ | 8.24 грн |
| 100+ | 5.59 грн |
| 1N4004-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
на замовлення 10568 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 100+ | 4.89 грн |
| 250+ | 4.17 грн |
| 500+ | 3.61 грн |
| 1000+ | 3.12 грн |
| 1500+ | 2.82 грн |
| 2000+ | 2.60 грн |
| 2500+ | 2.41 грн |
| 5500+ | 1.87 грн |
| 1N4004-E3/73 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
на замовлення 25720 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.97 грн |
| 40+ | 10.30 грн |
| 100+ | 7.03 грн |
| 500+ | 5.39 грн |
| 1000+ | 4.82 грн |
| 3000+ | 4.04 грн |
| 6000+ | 3.61 грн |
| 9000+ | 3.38 грн |
| 24000+ | 2.89 грн |
| 1N4004GP-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Reverse recovery time: 2µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Reverse recovery time: 2µs
на замовлення 4045 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.03 грн |
| 13+ | 32.63 грн |
| 25+ | 21.75 грн |
| 100+ | 16.31 грн |
| 500+ | 11.70 грн |
| IRF640PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
на замовлення 1106 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 125.12 грн |
| 10+ | 79.93 грн |
| 50+ | 69.21 грн |
| 100+ | 63.45 грн |
| 250+ | 58.50 грн |
| 300+ | 57.68 грн |
| 500+ | 55.21 грн |
| 1000+ | 51.09 грн |
| IRF640SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
на замовлення 1070 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.51 грн |
| 10+ | 88.16 грн |
| 25+ | 80.75 грн |
| 50+ | 75.81 грн |
| 100+ | 70.86 грн |
| 500+ | 60.15 грн |
| 750+ | 59.33 грн |
| 1000+ | 57.68 грн |
| IRF640STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BAT54A-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
на замовлення 1285 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 93+ | 4.45 грн |
| 105+ | 3.96 грн |
| 136+ | 3.05 грн |
| 500+ | 2.88 грн |
| 1000+ | 2.78 грн |
| BAT54A-HE3-08 |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
на замовлення 1610 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.68 грн |
| 125+ | 3.31 грн |
| 500+ | 2.93 грн |
| BAT54S-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.23W
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Reverse recovery time: 5ns
Max. load current: 0.3A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.23W
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Reverse recovery time: 5ns
Max. load current: 0.3A
на замовлення 5988 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.87 грн |
| 73+ | 5.69 грн |
| 105+ | 3.94 грн |
| 500+ | 3.10 грн |
| 1000+ | 2.79 грн |
| 3000+ | 2.39 грн |
| BAT54S-HE3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
на замовлення 2895 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 75+ | 6.30 грн |
| 115+ | 3.70 грн |
| 500+ | 3.26 грн |
| VS-10BQ100-M3/5BT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 38A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 38A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
на замовлення 1965 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.18 грн |
| 23+ | 18.46 грн |
| 25+ | 17.14 грн |
| 50+ | 14.09 грн |
| 100+ | 12.77 грн |
| 500+ | 9.56 грн |
| 1000+ | 8.16 грн |
| 1300+ | 7.75 грн |
| VS-10BQ100HM3/5BT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 780A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Capacitance: 65pF
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 780A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Capacitance: 65pF
Application: automotive industry
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.72 грн |
| 20+ | 20.76 грн |
| SMAJ15A-E3/61 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷18.5V; 16.4A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Technology: TransZorb®
на замовлення 2994 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.20 грн |
| 41+ | 10.05 грн |
| 100+ | 7.91 грн |
| 250+ | 6.51 грн |
| 500+ | 5.32 грн |
| 1000+ | 4.20 грн |
| 1800+ | 3.81 грн |
| IRFP240PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| T63XB103KT20 |
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Виробник: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T63XB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 13 ±2
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 15 ±5
Operating voltage: 250V
Track material: cermet
IP rating: IP67
Characteristics: linear
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T63XB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 13 ±2
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 15 ±5
Operating voltage: 250V
Track material: cermet
IP rating: IP67
Characteristics: linear
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 253.78 грн |
| 3+ | 216.70 грн |
| 5+ | 205.17 грн |
| 10+ | 189.51 грн |
| 20+ | 173.86 грн |
| T63YB103KT20 |
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Виробник: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T63YB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 13 ±2
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 15 ±5
Operating voltage: 250V
Track material: cermet
IP rating: IP67
Characteristics: linear
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T63YB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 13 ±2
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 15 ±5
Operating voltage: 250V
Track material: cermet
IP rating: IP67
Characteristics: linear
на замовлення 885 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 166.82 грн |
| 10+ | 133.48 грн |
| 25+ | 125.24 грн |
| 50+ | 118.65 грн |
| 100+ | 115.36 грн |
| T93XB103KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93XB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 19 ±2
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 22 ±5
Operating voltage: 250V
Engineering PN: 64Z; 67Z; 3296Z
Track material: cermet
IP rating: IP67
Characteristics: linear
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93XB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 19 ±2
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 22 ±5
Operating voltage: 250V
Engineering PN: 64Z; 67Z; 3296Z
Track material: cermet
IP rating: IP67
Characteristics: linear
на замовлення 91 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 104.71 грн |
| 10+ | 72.51 грн |
| 50+ | 67.57 грн |
| T93YB103KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93YB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 19 ±2
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 22 ±5
Operating voltage: 250V
Engineering PN: 64Y; 67Y; 3296Y
Track material: cermet
IP rating: IP67
Characteristics: linear
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93YB
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 19 ±2
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 22 ±5
Operating voltage: 250V
Engineering PN: 64Y; 67Y; 3296Y
Track material: cermet
IP rating: IP67
Characteristics: linear
на замовлення 3763 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 127.78 грн |
| 10+ | 90.64 грн |
| 25+ | 83.22 грн |
| 50+ | 73.33 грн |
| 100+ | 69.21 грн |
| 200+ | 63.45 грн |
| 500+ | 60.97 грн |
| 1000+ | 58.50 грн |
| 1N5400-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 443.68 грн |
| VS-36MT60 |
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Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1085.23 грн |
| 5+ | 886.59 грн |
| SIHB12N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHB12N60ET1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHF12N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHP12N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
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| IRFP22N50APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 276.85 грн |
| IRFP250PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
на замовлення 284 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 267.09 грн |
| 5+ | 199.40 грн |
| 10+ | 137.60 грн |
| 25+ | 111.24 грн |
| IRFP260PBF | ![]() |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 414 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 307.91 грн |
| 10+ | 204.34 грн |
| 25+ | 177.98 грн |
| IRFP264PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| 1.5KE6.8CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 489 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.27 грн |
| 14+ | 29.99 грн |
| 100+ | 23.32 грн |
| SS34-E3/57T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Load current: 3A
Kind of package: 7 inch reel
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Load current: 3A
Kind of package: 7 inch reel
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.5V
на замовлення 2420 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.28 грн |
| 19+ | 22.41 грн |
| 100+ | 16.15 грн |
| 200+ | 14.17 грн |
| 250+ | 13.51 грн |
| 500+ | 11.54 грн |
| 850+ | 10.05 грн |
| 1700+ | 8.98 грн |
| SS34-E3/9AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Load current: 3A
Kind of package: 13 inch reel
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 20mA
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Load current: 3A
Kind of package: 13 inch reel
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 20mA
Max. forward voltage: 0.5V
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В кошику
од. на суму грн.
| MBR20100CT-E3/4W |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
на замовлення 394 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.06 грн |
| 6+ | 77.45 грн |
| 10+ | 72.51 грн |
| 25+ | 64.27 грн |
| 50+ | 59.33 грн |
| 100+ | 54.38 грн |
| 2N7002K-T1-E3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 3350 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.86 грн |
| 43+ | 9.64 грн |
| 59+ | 7.05 грн |
| 100+ | 6.17 грн |
| 250+ | 5.23 грн |
| 500+ | 4.63 грн |
| 1000+ | 4.14 грн |
| 3000+ | 3.49 грн |
| 2N7002K-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 4911 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.75 грн |
| 37+ | 11.37 грн |
| 52+ | 7.96 грн |
| 100+ | 6.76 грн |
| 500+ | 4.54 грн |
| 3000+ | 3.29 грн |
| SIHB15N65E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHF15N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHP15N65E-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SS16-E3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Quantity in set/package: 7500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Quantity in set/package: 7500pcs.
на замовлення 5071 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.87 грн |
| 57+ | 7.25 грн |
| 100+ | 5.91 грн |
| 500+ | 4.93 грн |
| 1000+ | 4.50 грн |
| 2500+ | 3.95 грн |
| 5000+ | 3.71 грн |
| SS16-E3/61T | ![]() |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
на замовлення 4910 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.42 грн |
| 42+ | 9.89 грн |
| 46+ | 9.06 грн |
| 57+ | 7.25 грн |
| 100+ | 6.53 грн |
| 500+ | 4.99 грн |
| 1000+ | 4.38 грн |
| 1300+ | 4.15 грн |
| 1800+ | 3.89 грн |
| SS16HE3_B/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
на замовлення 6429 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.20 грн |
| 38+ | 10.96 грн |
| 40+ | 10.46 грн |
| 50+ | 8.82 грн |
| 100+ | 7.83 грн |
| 250+ | 6.67 грн |
| 500+ | 5.69 грн |
| 1000+ | 5.36 грн |
| CRCW0603240RFKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; 75V; -55÷155°C
Mounting: SMD
Case - inch: 0603
Resistance: 240Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 0.1W
Operating voltage: 75V
Case - mm: 1608
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; 75V; -55÷155°C
Mounting: SMD
Case - inch: 0603
Resistance: 240Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 0.1W
Operating voltage: 75V
Case - mm: 1608
Type of resistor: thick film
на замовлення 19100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 2.10 грн |
| 500+ | 1.01 грн |
| 1000+ | 0.60 грн |
| 5000+ | 0.24 грн |
| IRF840PBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 3178 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 125.12 грн |
| 5+ | 87.34 грн |
| 10+ | 66.74 грн |
| 50+ | 44.49 грн |
| BZX55B10-TAP |
![]() |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 27815 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 140+ | 3.24 грн |
| 235+ | 1.79 грн |
| 500+ | 1.58 грн |
| 2500+ | 1.52 грн |
| GRC00JG4702W00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
на замовлення 1063 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.09 грн |
| 10+ | 41.86 грн |
| 50+ | 33.37 грн |
| 150+ | 30.82 грн |
| 300+ | 29.09 грн |
| 600+ | 28.34 грн |
| GRC00JG3321E00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Service life: 2000h
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Service life: 2000h
Dimensions: 16x25mm
на замовлення 204 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.55 грн |
| 12+ | 35.84 грн |
| 50+ | 28.84 грн |
| 150+ | 23.07 грн |
| IRF530PBF | ![]() |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Drain current: 10A
Gate charge: 26nC
On-state resistance: 0.16Ω
Power dissipation: 88W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 100V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Drain current: 10A
Gate charge: 26nC
On-state resistance: 0.16Ω
Power dissipation: 88W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 100V
на замовлення 1717 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.90 грн |
| 10+ | 43.67 грн |
| 11+ | 39.06 грн |
| 50+ | 30.49 грн |
| 100+ | 27.11 грн |
| 250+ | 23.24 грн |
| 500+ | 22.08 грн |
| 1000+ | 21.34 грн |
| IRF530SPBF | ![]() |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Mounting: SMD
Kind of package: tube
Case: D2PAK; TO263
Drain current: 10A
Gate charge: 26nC
On-state resistance: 0.16Ω
Power dissipation: 88W
Gate-source voltage: ±20V
Pulsed drain current: 56A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Mounting: SMD
Kind of package: tube
Case: D2PAK; TO263
Drain current: 10A
Gate charge: 26nC
On-state resistance: 0.16Ω
Power dissipation: 88W
Gate-source voltage: ±20V
Pulsed drain current: 56A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 100V
на замовлення 503 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 104.71 грн |
| 10+ | 69.21 грн |
| 50+ | 49.44 грн |
| BZX55C10-TAP | ![]() |
![]() |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 187 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 100+ | 4.12 грн |
| BZX55C12-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 7977 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.87 грн |
| 72+ | 5.77 грн |
| 90+ | 4.61 грн |
| 166+ | 2.50 грн |
| 250+ | 2.36 грн |
| 500+ | 2.28 грн |
| MUR460-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
на замовлення 1328 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.62 грн |
| 100+ | 22.82 грн |
| 500+ | 19.28 грн |
| 1000+ | 18.13 грн |
| 1N4007-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Quantity in set/package: 5500pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Quantity in set/package: 5500pcs.
на замовлення 17744 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.65 грн |
| 58+ | 7.17 грн |
| 100+ | 5.24 грн |
| 500+ | 4.05 грн |
| 1000+ | 3.57 грн |
| 2000+ | 3.10 грн |
| 2500+ | 2.95 грн |
| 5500+ | 2.44 грн |
| 11000+ | 1.99 грн |































